JP2007281476A - GaN系半導体発光素子及びその製造方法 - Google Patents
GaN系半導体発光素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000956 alloy Substances 0.000 claims abstract description 34
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 34
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 25
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 229910052746 lanthanum Inorganic materials 0.000 claims description 15
- 229910052749 magnesium Inorganic materials 0.000 claims description 15
- 229910052748 manganese Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 229910052714 tellurium Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910017937 Ag-Ni Inorganic materials 0.000 claims description 5
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 5
- 229910017984 Ag—Ni Inorganic materials 0.000 claims description 5
- 229910009369 Zn Mg Inorganic materials 0.000 claims description 5
- 229910007573 Zn-Mg Inorganic materials 0.000 claims description 5
- 229910007567 Zn-Ni Inorganic materials 0.000 claims description 5
- 229910007565 Zn—Cu Inorganic materials 0.000 claims description 5
- 229910007614 Zn—Ni Inorganic materials 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 239000003570 air Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M1/00—Stationary means for catching or killing insects
- A01M1/22—Killing insects by electric means
- A01M1/223—Killing insects by electric means by using electrocution
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M1/00—Stationary means for catching or killing insects
- A01M1/06—Catching insects by using a suction effect
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M1/00—Stationary means for catching or killing insects
- A01M1/08—Attracting and catching insects by using combined illumination or colours and suction effects
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M2200/00—Kind of animal
- A01M2200/01—Insects
- A01M2200/012—Flying insects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S43/00—Fishing, trapping, and vermin destroying
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Abstract
【解決手段】n電極、p電極、そしてこれらの間にn型半導体層、活性層及びp型半導体層を備えるGaN系半導体発光素子において、p電極は、p型半導体層上にZnまたはZn系合金で形成された第1電極層と、第1電極層上にAgまたはAg系合金で形成された第2電極層と、第2電極層上に透明伝導性酸化物で形成された第3電極層と、を備えるGaN系半導体発光素子である。
【選択図】図1
Description
20 n型半導体層、
30 活性層、
40 p型半導体層、
50 n電極、
60 p電極、
60a 第1電極層、
60b 第2電極層、
60c 第3電極層。
Claims (25)
- n電極、p電極、これらの間にn型半導体層、活性層、及びp型半導体層を備えるGaN系半導体発光素子において、
前記p電極は、
前記p型半導体層上にZnまたはZn系合金で形成された第1電極層と、
前記第1電極層上にAgまたはAg系合金で形成された第2電極層と、
前記第2電極層上に透明伝導性酸化物で形成された第3電極層と、
を備えることを特徴とするGaN系半導体発光素子。 - 前記Zn系合金は、Ag、Mg、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、及びLaからなる群から選択された少なくとも一つの金属及びZnを含むことを特徴とする請求項1に記載のGaN系半導体発光素子。
- 前記Zn系合金は、Zn−Ni、Zn−Mg、及びZn−Cuからなる群から選択された何れか一つであることを特徴とする請求項2に記載のGaN系半導体発光素子。
- 前記Ag系合金は、Zn、Mg、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、及びLaからなる群から選択された少なくとも一つの金属及びAgを含むことを特徴とする請求項1に記載のGaN系半導体発光素子。
- 前記Ag系合金は、Ag−Cu、Ag−Ni、Ag−Zn、及びAg−Mgからなる群から選択された何れか一つであることを特徴とする請求項4に記載のGaN系半導体発光素子。
- 前記透明伝導性の酸化物は、In、Sn、Zn、Ga、Cd、Mg、Be、Ag、Mo、V、Cu、Ir、Rh、Ru、W、Co、Ni、Mn、及びLaからなる群から選択された少なくとも何れか一つの金属の酸化物であることを特徴とする請求項1に記載のGaN系半導体発光素子。
- 前記透明伝導性の酸化物は、ITOまたはZnOであることを特徴とする請求項6に記載のGaN系半導体発光素子。
- 前記第1電極層は、0.1nm〜〜500nmの厚さに形成されたことを特徴とする請求項1に記載のGaN系半導体発光素子。
- 前記第2電極層は、0.1nm〜〜500nmの厚さに形成されたことを特徴とする請求項1に記載のGaN系半導体発光素子。
- 前記第3電極層は、10nm〜1000nmの厚さに形成されたことを特徴とする請求項1に記載のGaN系半導体発光素子。
- 基板上に順次にn型半導体層、活性層、及びp型半導体層を形成する工程と、
前記n型半導体層上にn電極を形成する工程と、
前記p型半導体層上にp電極を形成する工程と、を含むGaN系半導体発光素子の製造方法において、
前記p電極を形成する工程は、
前記p型半導体層上にZnまたはZn系合金で第1電極層を形成する工程と、
前記第1電極層上にAgまたはAg系合金で第2電極層を形成する工程と、
前記第2電極層上に透明伝導性酸化物で第3電極層を形成する工程と、
前記第1電極層、第2電極層、及び第3電極層を熱処理する工程と、
を含むことを特徴とするGaN系半導体発光素子の製造方法。 - 前記熱処理は、200℃〜700℃の温度範囲で行われることを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記熱処理は、10秒〜2時間行われることを特徴とする請求項12に記載のGaN系半導体発光素子の製造方法。
- 前記熱処理は、酸素を含むガス雰囲気で行われることを特徴とする請求項12に記載のGaN系半導体発光素子の製造方法。
- 前記ガス雰囲気は、窒素、アルゴン、ヘリウム、水素、及び空気からなる群から選択された少なくとも一つのガスをさらに含むことを特徴とする請求項14に記載のGaN系半導体発光素子の製造方法。
- 前記第1電極層、第2電極層、及び第3電極層のそれぞれは、電子ビーム及び熱による蒸着器により形成されることを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記Zn系合金は、Ag、Mg、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、及びLaからなる群から選択された少なくとも一つの金属及びZnを含むことを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記Zn系合金は、Zn−Ni、Zn−Mg、及びZn−Cuからなる群から選択された何れか一つであることを特徴とする請求項17に記載のGaN系半導体発光素子の製造方法。
- 前記Ag系合金は、Zn、Mg、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、及びLaからなる群から選択された少なくとも一つの金属及びAgを含むことを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記Ag系合金は、Ag−Cu、Ag−Ni、Ag−Zn、及びAg−Mgからなる群から選択された何れか一つであることを特徴とする請求項19に記載のGaN系半導体発光素子の製造方法。
- 前記透明伝導性酸化物は、In、Sn、Zn、Ga、Cd、Mg、Be、Ag、Mo、V、Cu、Ir、Rh、Ru、W、Co、Ni、Mn、及びLaからなる群から選択された少なくとも何れか一つの金属の酸化物であることを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記透明伝導性酸化物は、ITOまたはZnOであることを特徴とする請求項21に記載のGaN系半導体発光素子の製造方法。
- 前記第1電極層は、0.1nm〜500nmの厚さに形成されることを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記第2電極層は、0.1nm〜500nmの厚さに形成されることを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
- 前記第3電極層は、10nm〜1000nmの厚さに形成されることを特徴とする請求項11に記載のGaN系半導体発光素子の製造方法。
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KR1020060030992A KR100755649B1 (ko) | 2006-04-05 | 2006-04-05 | GaN계 반도체 발광소자 및 그 제조방법 |
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CN102511086A (zh) * | 2010-04-02 | 2012-06-20 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
CN102916103B (zh) * | 2012-09-18 | 2017-05-03 | 中山大学 | 一种薄膜结构透明电极及其制备方法 |
CN103730543B (zh) * | 2012-10-10 | 2016-12-21 | 北京时代浩鼎节能技术有限公司 | 发光二极管的制作方法 |
CN110429164B (zh) * | 2013-01-24 | 2022-11-25 | 亮锐控股有限公司 | 半导体发光器件中的p接触电阻的控制 |
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2007
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Publication number | Publication date |
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CN101051661B (zh) | 2012-04-18 |
US20070235814A1 (en) | 2007-10-11 |
CN101051661A (zh) | 2007-10-10 |
KR100755649B1 (ko) | 2007-09-04 |
JP5130436B2 (ja) | 2013-01-30 |
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