JP2005313014A - 処理液供給装置 - Google Patents
処理液供給装置 Download PDFInfo
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- JP2005313014A JP2005313014A JP2004131037A JP2004131037A JP2005313014A JP 2005313014 A JP2005313014 A JP 2005313014A JP 2004131037 A JP2004131037 A JP 2004131037A JP 2004131037 A JP2004131037 A JP 2004131037A JP 2005313014 A JP2005313014 A JP 2005313014A
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- ceiling plate
- liquid supply
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- processing liquid
- processing
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- 239000007788 liquid Substances 0.000 title claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000012545 processing Methods 0.000 claims description 74
- 238000004140 cleaning Methods 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000007599 discharging Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 24
- 238000005452 bending Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 8
- 238000011084 recovery Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Power Engineering (AREA)
- Medical Informatics (AREA)
- General Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
- Chemically Coating (AREA)
Abstract
【解決手段】 処理液供給装置は、上部処理部10と下部処理部20とからなり、両処理部間に搬送される基板に両面から処理液を供給しウエット処理を行う。下部処理部の天井板22の上面側に所要個数の凹部を形成し、その中に上端が天井板から露呈するように支持コロ30を配設して搬入基板の自重による下方への撓みを規制する。支持コロ30を装填する凹部の底部には外部に連通する液抜き孔を設け、支持コロ30の回転に伴って発生するパーティクルを外部に排出する。
【選択図】 図1
Description
10 下部処理部
20 上部処理部
11、21 筐体
12、22 天井板
13、23 液供給路
14、24 液排出路
30 支持コロ
31,32 回転軸(支持軸)
221 凹部
222 軸受部
223 底部
224 液抜き路
225 液孔
226 共通路
321 液孔
322 貫通液孔
40 液抜き路
Claims (6)
- 通過する基板の上面に対向する上部天井板、前記上部天井板の基板搬送方向の一方側に設けられ、前記上部天井板の下面側に処理液を供給する上部液供給路部、及び他方側に設けられ、前記供給された処理液を前記上部天井板の下面側から吸引排出する上部液排出路部とを備えた上部処理部と、前記上部処理部に対向配置され、通過する基板の下面に対向する下部天井板、前記下部天井板の基板搬送方向の一方側に設けられ、前記下部天井板の上面側に処理液を供給する下部液供給路部、及び他方側に設けられ、前記供給された処理液を前記下部天井板の上面側から吸引排出する下部液排出路部とを備えた下部処理部とを備えた処理液供給装置において、
前記下部天井板は、上面側に形成された所要個数の凹部に上端が前記下部天井板の上面から突出する高さ位置で支持軸回りに回転可能に取り付けられた回転支持体を有し、前記凹部は、その底部に液抜き路が形成されていることを特徴とする処理液供給装置。 - 前記凹部は、前記下部天井板に形成された切欠部であり、前記回転支持体は、前記切欠部に支持された、幅方向に平行な支持軸に回転可能に軸支され、前記液抜き路は、前記切欠部の底部から下方に向けて形成された小孔であることを特徴とする請求項1記載の処理液供給装置。
- 前記凹部は、幅方向に所定個数、かつ搬送方向に所定個数だけ設けられていることを特徴とする請求項1又は2記載の処理液供給装置。
- 前記液抜き路は、前記下部処理部に形成された共通路に連通されていることを特徴とする請求項1〜3のいずれかに記載の処理液供給装置。
- 前記支持軸は、前記回転支持体の内周面に対向する外周面まで延長された洗浄液供給孔が形成されていることを特徴とする請求項1〜4のいずれかに記載の処理液供給装置。
- 前記回転支持体は、外周面が紡錘形状に形成されたものであることを特徴とする請求項1〜5のいずれかに記載の処理液供給装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004131037A JP4206359B2 (ja) | 2004-04-27 | 2004-04-27 | 処理液供給装置 |
TW094110730A TW200609562A (en) | 2004-04-27 | 2005-04-04 | Treatment liquid supply apparatus |
KR1020050034450A KR100670630B1 (ko) | 2004-04-27 | 2005-04-26 | 처리액 공급장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004131037A JP4206359B2 (ja) | 2004-04-27 | 2004-04-27 | 処理液供給装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005313014A true JP2005313014A (ja) | 2005-11-10 |
JP4206359B2 JP4206359B2 (ja) | 2009-01-07 |
Family
ID=35441015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004131037A Expired - Fee Related JP4206359B2 (ja) | 2004-04-27 | 2004-04-27 | 処理液供給装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4206359B2 (ja) |
KR (1) | KR100670630B1 (ja) |
TW (1) | TW200609562A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100753498B1 (ko) | 2005-08-02 | 2007-08-31 | 가부시키가이샤 퓨쳐비전 | 처리액 공급장치 |
JP2011086864A (ja) * | 2009-10-19 | 2011-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
CN116175869A (zh) * | 2022-10-31 | 2023-05-30 | 江苏正力新能电池技术有限公司 | 一种电池顶盖的表面处理装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100785403B1 (ko) * | 2006-11-27 | 2007-12-13 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR100873236B1 (ko) * | 2007-06-14 | 2008-12-10 | 주식회사 실트론 | 웨이퍼 처리 장치 |
KR101307006B1 (ko) * | 2012-03-14 | 2013-09-26 | 주식회사 디엠에스 | 기판처리장치 |
-
2004
- 2004-04-27 JP JP2004131037A patent/JP4206359B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-04 TW TW094110730A patent/TW200609562A/zh not_active IP Right Cessation
- 2005-04-26 KR KR1020050034450A patent/KR100670630B1/ko not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100753498B1 (ko) | 2005-08-02 | 2007-08-31 | 가부시키가이샤 퓨쳐비전 | 처리액 공급장치 |
JP2011086864A (ja) * | 2009-10-19 | 2011-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
CN116175869A (zh) * | 2022-10-31 | 2023-05-30 | 江苏正力新能电池技术有限公司 | 一种电池顶盖的表面处理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100670630B1 (ko) | 2007-01-17 |
TWI306960B (ja) | 2009-03-01 |
TW200609562A (en) | 2006-03-16 |
JP4206359B2 (ja) | 2009-01-07 |
KR20060046703A (ko) | 2006-05-17 |
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