JP2005285576A - インライン式有機エレクトロルミネセンス製造装置 - Google Patents

インライン式有機エレクトロルミネセンス製造装置 Download PDF

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Publication number
JP2005285576A
JP2005285576A JP2004098403A JP2004098403A JP2005285576A JP 2005285576 A JP2005285576 A JP 2005285576A JP 2004098403 A JP2004098403 A JP 2004098403A JP 2004098403 A JP2004098403 A JP 2004098403A JP 2005285576 A JP2005285576 A JP 2005285576A
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JP
Japan
Prior art keywords
substrate
manufacturing apparatus
line type
type organic
organic electroluminescence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004098403A
Other languages
English (en)
Japanese (ja)
Inventor
Susumu Kamikawa
進 神川
Hirohiko Morizaki
裕彦 森崎
Kozo Wada
宏三 和田
Takashi Yoshitake
隆 吉武
Masahiko Aida
聖彦 合田
Etsuro Hirai
悦郎 平井
Toshiro Kobayashi
敏郎 小林
Mitsuo Kato
光雄 加藤
Tatsuya Hirano
竜也 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Primetals Technologies Holdings Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Mitsubishi Hitachi Metals Machinery Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd, Mitsubishi Hitachi Metals Machinery Inc filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP2004098403A priority Critical patent/JP2005285576A/ja
Priority to TW094106283A priority patent/TW200539740A/zh
Priority to CNB2005100547673A priority patent/CN100482850C/zh
Priority to KR1020050020364A priority patent/KR100692170B1/ko
Publication of JP2005285576A publication Critical patent/JP2005285576A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2004098403A 2004-03-30 2004-03-30 インライン式有機エレクトロルミネセンス製造装置 Pending JP2005285576A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004098403A JP2005285576A (ja) 2004-03-30 2004-03-30 インライン式有機エレクトロルミネセンス製造装置
TW094106283A TW200539740A (en) 2004-03-30 2005-03-02 Manufacturing device of in-line type organic electroluminescent element
CNB2005100547673A CN100482850C (zh) 2004-03-30 2005-03-11 直列式有机电致发光制造装置
KR1020050020364A KR100692170B1 (ko) 2004-03-30 2005-03-11 인라인식 유기 일렉트로루미네선스 제조장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004098403A JP2005285576A (ja) 2004-03-30 2004-03-30 インライン式有機エレクトロルミネセンス製造装置

Publications (1)

Publication Number Publication Date
JP2005285576A true JP2005285576A (ja) 2005-10-13

Family

ID=35049405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004098403A Pending JP2005285576A (ja) 2004-03-30 2004-03-30 インライン式有機エレクトロルミネセンス製造装置

Country Status (4)

Country Link
JP (1) JP2005285576A (de)
KR (1) KR100692170B1 (de)
CN (1) CN100482850C (de)
TW (1) TW200539740A (de)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149482A (ja) * 2005-11-28 2007-06-14 Konica Minolta Holdings Inc 有機ｅｌ素子の製造方法
WO2007142315A1 (ja) * 2006-06-07 2007-12-13 Tokyo Electron Limited 発光素子の製造装置および発光素子の製造方法
WO2007145255A1 (ja) * 2006-06-14 2007-12-21 Tokyo Electron Limited 発光素子および発光素子の製造方法
WO2007145256A1 (ja) * 2006-06-14 2007-12-21 Tokyo Electron Limited 発光素子の製造装置および発光素子の製造方法
JP2009117231A (ja) * 2007-11-08 2009-05-28 Hitachi Displays Ltd 有機ｅｌ表示装置の製造方法
JP2009242901A (ja) * 2008-03-31 2009-10-22 Shibaura Mechatronics Corp スパッタリング装置及び方法
WO2011062213A1 (ja) * 2009-11-19 2011-05-26 株式会社ニコン リーダ部材、基板、基板カートリッジ、基板処理装置、リーダ接続方法、表示素子の製造方法及び表示素子の製造装置
JP2011233601A (ja) * 2010-04-23 2011-11-17 Panasonic Electric Works Co Ltd 発光モジュール及びそのモジュールを用いた照明器具
KR101200593B1 (ko) * 2006-02-17 2012-11-12 황창훈 유기소자 양산용 증착용 기판 이송용 롤러장치
WO2013118397A1 (ja) * 2012-02-08 2013-08-15 東京エレクトロン株式会社 成膜装置
JP2014098205A (ja) * 2012-10-18 2014-05-29 Ulvac Japan Ltd 成膜装置
JP2014109054A (ja) * 2012-11-30 2014-06-12 Panasonic Corp 真空成膜装置
JP2015511989A (ja) * 2011-12-23 2015-04-23 ソレクセル、インコーポレイテッド 生産性の高い半導体の金属被覆及び相互接続の噴霧処理
JP2021102800A (ja) * 2019-12-25 2021-07-15 株式会社プラズマイオンアシスト プラズマ処理装置
JP2021106260A (ja) * 2019-12-26 2021-07-26 キヤノントッキ株式会社 成膜装置、成膜方法および電子デバイスの製造方法
WO2022137022A1 (ja) * 2020-12-25 2022-06-30 株式会社半導体エネルギー研究所 表示装置の製造装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011127190A (ja) * 2009-12-18 2011-06-30 Showa Denko Kk インライン式成膜装置、磁気記録媒体の製造方法、及びゲートバルブ
TWI398533B (zh) * 2009-12-29 2013-06-11 Au Optronics Corp 蔭罩及其製作方法
KR101341850B1 (ko) * 2012-10-24 2013-12-16 주식회사 선익시스템 유기 증착 마스크의 플라즈마 건식세정을 위한 시스템

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06173002A (ja) * 1992-02-26 1994-06-21 Nkk Corp イオンプレ−ティング装置
JP2001007507A (ja) * 1999-06-25 2001-01-12 Fujitsu Ltd リフロー装置
JP2001118789A (ja) * 1999-08-11 2001-04-27 Tokyo Electron Ltd 加熱処理装置の冷却方法及び加熱処理装置
JP2002317262A (ja) * 2001-02-08 2002-10-31 Semiconductor Energy Lab Co Ltd 成膜装置及び成膜方法
JP2002348659A (ja) * 2001-05-23 2002-12-04 Junji Kido 連続蒸着装置、蒸着装置及び蒸着方法
JP2003171763A (ja) * 2001-12-07 2003-06-20 Sony Corp インライン式真空成膜装置およびその冷却制御方法
JP2003309167A (ja) * 2002-04-16 2003-10-31 Canon Inc 基板保持装置
JP2004063454A (ja) * 2002-06-03 2004-02-26 Semiconductor Energy Lab Co Ltd 蒸着装置
JP2005281784A (ja) * 2004-03-30 2005-10-13 Mitsubishi-Hitachi Metals Machinery Inc 基板の冷却構造

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06173002A (ja) * 1992-02-26 1994-06-21 Nkk Corp イオンプレ−ティング装置
JP2001007507A (ja) * 1999-06-25 2001-01-12 Fujitsu Ltd リフロー装置
JP2001118789A (ja) * 1999-08-11 2001-04-27 Tokyo Electron Ltd 加熱処理装置の冷却方法及び加熱処理装置
JP2002317262A (ja) * 2001-02-08 2002-10-31 Semiconductor Energy Lab Co Ltd 成膜装置及び成膜方法
JP2002348659A (ja) * 2001-05-23 2002-12-04 Junji Kido 連続蒸着装置、蒸着装置及び蒸着方法
JP2003171763A (ja) * 2001-12-07 2003-06-20 Sony Corp インライン式真空成膜装置およびその冷却制御方法
JP2003309167A (ja) * 2002-04-16 2003-10-31 Canon Inc 基板保持装置
JP2004063454A (ja) * 2002-06-03 2004-02-26 Semiconductor Energy Lab Co Ltd 蒸着装置
JP2005281784A (ja) * 2004-03-30 2005-10-13 Mitsubishi-Hitachi Metals Machinery Inc 基板の冷却構造

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149482A (ja) * 2005-11-28 2007-06-14 Konica Minolta Holdings Inc 有機ｅｌ素子の製造方法
KR101200593B1 (ko) * 2006-02-17 2012-11-12 황창훈 유기소자 양산용 증착용 기판 이송용 롤러장치
WO2007142315A1 (ja) * 2006-06-07 2007-12-13 Tokyo Electron Limited 発光素子の製造装置および発光素子の製造方法
KR101121446B1 (ko) * 2006-06-14 2012-03-16 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 발광 소자의 제조 장치 및 발광 소자의 제조 방법
WO2007145255A1 (ja) * 2006-06-14 2007-12-21 Tokyo Electron Limited 発光素子および発光素子の製造方法
WO2007145256A1 (ja) * 2006-06-14 2007-12-21 Tokyo Electron Limited 発光素子の製造装置および発光素子の製造方法
JP2007335204A (ja) * 2006-06-14 2007-12-27 Tokyo Electron Ltd 発光素子の製造装置および発光素子の製造方法
JP2007335203A (ja) * 2006-06-14 2007-12-27 Tokyo Electron Ltd 発光素子および発光素子の製造方法
KR101038457B1 (ko) * 2006-06-14 2011-06-01 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 발광 소자의 제조 방법 및 제조 장치
US8263174B2 (en) 2006-06-14 2012-09-11 Tokyo Electron Limited Light emitting device and method for manufacturing light emitting device
JP2009117231A (ja) * 2007-11-08 2009-05-28 Hitachi Displays Ltd 有機ｅｌ表示装置の製造方法
JP2009242901A (ja) * 2008-03-31 2009-10-22 Shibaura Mechatronics Corp スパッタリング装置及び方法
JP5751170B2 (ja) * 2009-11-19 2015-07-22 株式会社ニコン シート基板、基板カートリッジ、基板処理装置、リーダ接続方法、表示素子の製造方法及び表示装置の製造方法
WO2011062213A1 (ja) * 2009-11-19 2011-05-26 株式会社ニコン リーダ部材、基板、基板カートリッジ、基板処理装置、リーダ接続方法、表示素子の製造方法及び表示素子の製造装置
JPWO2011062213A1 (ja) * 2009-11-19 2013-04-11 株式会社ニコン リーダ部材、基板、基板カートリッジ、基板処理装置、リーダ接続方法、表示素子の製造方法及び表示素子の製造装置
KR20120093170A (ko) * 2009-11-19 2012-08-22 가부시키가이샤 니콘 리더 부재, 기판, 기판 카트리지, 기판 처리 장치, 리더 접속 방법, 표시 소자의 제조 방법 및 표시 소자의 제조 장치
KR101678717B1 (ko) 2009-11-19 2016-11-23 가부시키가이샤 니콘 시트 기판, 기판 카트리지, 기판 처리 장치, 기판 처리 방법, 전기 회로의 제조 방법, 및 리더 접속 방법
US9193560B2 (en) 2009-11-19 2015-11-24 Nikon Corporation Leader member, substrate, substrate cartridge, substrate-processing apparatus, leader-connecting method, method of manufacturing display element, and apparatus for manufacturing display element
JP2011233601A (ja) * 2010-04-23 2011-11-17 Panasonic Electric Works Co Ltd 発光モジュール及びそのモジュールを用いた照明器具
JP2017133108A (ja) * 2011-12-23 2017-08-03 ソレクセル、インコーポレイテッド 生産性の高い半導体の金属被覆及び相互接続の噴霧処理
JP2015511989A (ja) * 2011-12-23 2015-04-23 ソレクセル、インコーポレイテッド 生産性の高い半導体の金属被覆及び相互接続の噴霧処理
WO2013118397A1 (ja) * 2012-02-08 2013-08-15 東京エレクトロン株式会社 成膜装置
JP2014098205A (ja) * 2012-10-18 2014-05-29 Ulvac Japan Ltd 成膜装置
JP2017082342A (ja) * 2012-10-18 2017-05-18 株式会社アルバック 成膜装置
JP2014109054A (ja) * 2012-11-30 2014-06-12 Panasonic Corp 真空成膜装置
JP2021102800A (ja) * 2019-12-25 2021-07-15 株式会社プラズマイオンアシスト プラズマ処理装置
JP2021106260A (ja) * 2019-12-26 2021-07-26 キヤノントッキ株式会社 成膜装置、成膜方法および電子デバイスの製造方法
WO2022137022A1 (ja) * 2020-12-25 2022-06-30 株式会社半導体エネルギー研究所 表示装置の製造装置

Also Published As

Publication number Publication date
CN1676659A (zh) 2005-10-05
TW200539740A (en) 2005-12-01
KR100692170B1 (ko) 2007-03-12
TWI311895B (de) 2009-07-01
CN100482850C (zh) 2009-04-29
KR20060043861A (ko) 2006-05-15

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