JP2005276890A5 - - Google Patents

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Publication number
JP2005276890A5
JP2005276890A5 JP2004084170A JP2004084170A JP2005276890A5 JP 2005276890 A5 JP2005276890 A5 JP 2005276890A5 JP 2004084170 A JP2004084170 A JP 2004084170A JP 2004084170 A JP2004084170 A JP 2004084170A JP 2005276890 A5 JP2005276890 A5 JP 2005276890A5
Authority
JP
Japan
Prior art keywords
lead
semiconductor device
tab
tab suspension
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004084170A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005276890A (ja
JP4417150B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004084170A external-priority patent/JP4417150B2/ja
Priority to JP2004084170A priority Critical patent/JP4417150B2/ja
Priority to US11/038,070 priority patent/US7176557B2/en
Priority to TW100129842A priority patent/TWI505418B/zh
Priority to TW094102022A priority patent/TW200536088A/zh
Priority to CNB2005100082591A priority patent/CN100466241C/zh
Priority to KR1020050011833A priority patent/KR101103871B1/ko
Publication of JP2005276890A publication Critical patent/JP2005276890A/ja
Priority to US11/653,402 priority patent/US7339261B2/en
Publication of JP2005276890A5 publication Critical patent/JP2005276890A5/ja
Publication of JP4417150B2 publication Critical patent/JP4417150B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004084170A 2004-03-23 2004-03-23 半導体装置 Expired - Fee Related JP4417150B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004084170A JP4417150B2 (ja) 2004-03-23 2004-03-23 半導体装置
US11/038,070 US7176557B2 (en) 2004-03-23 2005-01-21 Semiconductor device
TW100129842A TWI505418B (zh) 2004-03-23 2005-01-24 Semiconductor device
TW094102022A TW200536088A (en) 2004-03-23 2005-01-24 Semiconductor device and its production method
CNB2005100082591A CN100466241C (zh) 2004-03-23 2005-02-07 半导体器件
KR1020050011833A KR101103871B1 (ko) 2004-03-23 2005-02-14 반도체장치 및 그 제조방법
US11/653,402 US7339261B2 (en) 2004-03-23 2007-01-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004084170A JP4417150B2 (ja) 2004-03-23 2004-03-23 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009174238A Division JP4987041B2 (ja) 2009-07-27 2009-07-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005276890A JP2005276890A (ja) 2005-10-06
JP2005276890A5 true JP2005276890A5 (enExample) 2007-05-10
JP4417150B2 JP4417150B2 (ja) 2010-02-17

Family

ID=34988807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004084170A Expired - Fee Related JP4417150B2 (ja) 2004-03-23 2004-03-23 半導体装置

Country Status (5)

Country Link
US (2) US7176557B2 (enExample)
JP (1) JP4417150B2 (enExample)
KR (1) KR101103871B1 (enExample)
CN (1) CN100466241C (enExample)
TW (2) TW200536088A (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4372508B2 (ja) * 2003-10-06 2009-11-25 ローム株式会社 リードフレームの製造方法およびそれを用いた半導体装置の製造方法、ならびに半導体装置ならびにそれを備えた携帯機器および電子装置
JP4942020B2 (ja) * 2006-05-12 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
JP2008071927A (ja) * 2006-09-14 2008-03-27 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP5180495B2 (ja) 2007-03-14 2013-04-10 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7847376B2 (en) * 2007-07-19 2010-12-07 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
JP5155644B2 (ja) * 2007-07-19 2013-03-06 ルネサスエレクトロニクス株式会社 半導体装置
US7851897B1 (en) * 2008-06-16 2010-12-14 Maxim Integrated Products, Inc. IC package structures for high power dissipation and low RDSon
JP5549066B2 (ja) * 2008-09-30 2014-07-16 凸版印刷株式会社 リードフレーム型基板とその製造方法、及び半導体装置
JP2010258159A (ja) * 2009-04-23 2010-11-11 Renesas Electronics Corp 半導体装置
JP5380244B2 (ja) * 2009-10-22 2014-01-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5255009B2 (ja) * 2010-02-26 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
US8390103B2 (en) * 2010-07-12 2013-03-05 Analog Devices, Inc. Apparatus for integrated circuit packaging
JP2012227445A (ja) 2011-04-21 2012-11-15 Renesas Electronics Corp 半導体装置及びその製造方法
JP5204271B2 (ja) * 2011-06-16 2013-06-05 株式会社東芝 内視鏡装置および基板
JP2013093483A (ja) * 2011-10-27 2013-05-16 Semiconductor Components Industries Llc 半導体装置及びその製造方法
JP5798021B2 (ja) * 2011-12-01 2015-10-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5817513B2 (ja) * 2011-12-27 2015-11-18 大日本印刷株式会社 半導体装置製造用リードフレーム及び半導体装置の製造方法
JP5947107B2 (ja) * 2012-05-23 2016-07-06 ルネサスエレクトロニクス株式会社 半導体装置
JP6011083B2 (ja) * 2012-07-09 2016-10-19 日亜化学工業株式会社 発光装置用リードフレームおよびその製造方法ならびに発光装置の製造方法
TWI570858B (zh) * 2014-12-23 2017-02-11 揚智科技股份有限公司 半導體封裝結構
US10083888B2 (en) * 2015-11-19 2018-09-25 Advanced Semiconductor Engineering, Inc. Semiconductor device package
US9847283B1 (en) * 2016-11-06 2017-12-19 Nexperia B.V. Semiconductor device with wettable corner leads
CN111834323B (zh) * 2020-07-29 2025-08-19 北京燕东微电子科技有限公司 一种半导体封装件及其制造方法
KR20230019692A (ko) 2021-08-02 2023-02-09 삼성전자주식회사 칩 온 필름 패키지 및 이를 포함하는 디스플레이 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888183B2 (ja) * 1995-11-13 1999-05-10 ヤマハ株式会社 樹脂封止型半導体装置
US6909179B2 (en) * 1996-03-18 2005-06-21 Renesas Technology Corp. Lead frame and semiconductor device using the lead frame and method of manufacturing the same
US5936837A (en) * 1997-08-11 1999-08-10 Motorola, Inc. Semiconductor component having leadframe with offset ground plane
JP2000236060A (ja) * 1999-02-16 2000-08-29 Matsushita Electronics Industry Corp 半導体装置
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
JP2001230360A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3786339B2 (ja) * 2000-03-23 2006-06-14 株式会社三井ハイテック 半導体装置の製造方法
JP3640601B2 (ja) 2000-07-11 2005-04-20 セントラル硝子株式会社 フッ素含有化合物ガスの検出方法
SG102638A1 (en) * 2000-09-15 2004-03-26 Samsung Techwin Co Ltd Lead frame, semiconductor package having the same, and semiconductor package manufacturing method
JP2002184927A (ja) * 2000-12-19 2002-06-28 Mitsui High Tec Inc 半導体装置の製造方法
JP2004022725A (ja) * 2002-06-14 2004-01-22 Renesas Technology Corp 半導体装置
US7525184B2 (en) * 2002-07-01 2009-04-28 Renesas Technology Corp. Semiconductor device and its manufacturing method

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