JP2005260569A - 伝送線路型素子及びその作製方法 - Google Patents
伝送線路型素子及びその作製方法 Download PDFInfo
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- JP2005260569A JP2005260569A JP2004069120A JP2004069120A JP2005260569A JP 2005260569 A JP2005260569 A JP 2005260569A JP 2004069120 A JP2004069120 A JP 2004069120A JP 2004069120 A JP2004069120 A JP 2004069120A JP 2005260569 A JP2005260569 A JP 2005260569A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/723—On an electrically insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
- Y10S977/785—Electrically insulating host material
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Waveguides (AREA)
- Waveguide Connection Structure (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】 基板となる金属で構成される第1の電極層10の上に、第1の電極層10を酸化または窒化または酸窒化して形成される誘電体層20と、誘電体層20上に形成される導電体層30と、導電体層30の上に形成される第2の電極層40を形成し、マイクロストリップ線路素子を構成する。導電体層30は、少なくとも導体ナノ粒子32とバインダ樹脂31とから成る。
【選択図】 図2
Description
本発明の実施の形態について説明する前に、原理について説明する。
εeff=(εr+1)/2+(εr−1)/2(1+12h/W)1/2
上記式から誘電体層の比誘電率が一定の場合、W/hが大きいほど、つまり導電体層及び第2の電極層の幅に対して誘電体層の厚さが薄いほどマイクロストリップ線路の特性インピーダンスが小さくなる。
図1を参照すると、本発明による伝送線路型素子の一例としてマイクロストリップ線路が示されている。図2は、図1の断面図である。
次に、図3を参照して第1の実施の形態のマイクロストリップ線路の作製方法を説明する。図3はマイクロストリップ線路の作製過程をそのプロセス順に示した断面図である。
次に、図3を参照して第1の実施の形態による素子の作製方法を具体的な実施例で説明する。
20、70 誘電体層
30、80 導電体層
31、81 バインダ層
32、82 導体ナノ粒子層
40、90 第2の電極層
50 半導体基板
Claims (6)
- 第1の電極層上に、少なくとも誘電体層、導電体層が順に配置されて成るマイクロストリップ線路において、前記導電体層が、少なくとも導体ナノ粒子とバインダ樹脂とから成ることを特徴とするマイクロストリップ線路。
- 前記導体ナノ粒子が、金、銀、銅、酸化銀、酸化銅、酸化スズ、酸化亜鉛、酸化インジウムのうち少なくとも1つを含み、かつ該導体ナノ粒子の平均粒子径が1nm以上500nm以下であって、かつ導電体層中の該導体ナノ粒子の含有量が10重量%以上100重量%未満であることを特徴とする請求項1に記載のマイクロストリップ線路。
- 特性インピーダンスが1Ω以下であることを特徴とする請求項1または2に記載のマイクロストリップ線路。
- 前記導電体層の上に第2の電極層が配置されていることを特徴とする請求項1から3のいずれかに記載のマイクロストリップ線路。
- 前記第1の電極層上に前記導電体層を製膜し、250℃以上600℃以下の温度で熱処理することで前記第1の電極層と前記導電体層との間に前記誘電体層を作製することを特徴とする請求項1から請求項4のいずれかに記載のマイクロストリップ線路の作製方法。
- 前記誘電体層は、前記第1の電極層を酸化または窒化あるいは酸窒化して形成されることを特徴とする請求項5に記載のマイクロストリップ線路の作製方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004069120A JP4182016B2 (ja) | 2004-03-11 | 2004-03-11 | 伝送線路型素子及びその作製方法 |
CNA2005800077553A CN1930728A (zh) | 2004-03-11 | 2005-03-11 | 传送线路型元件及其制作方法 |
US10/592,008 US7545241B2 (en) | 2004-03-11 | 2005-03-11 | Nanoparticle transmission line element and method of fabricating the same |
PCT/JP2005/004854 WO2005088762A1 (ja) | 2004-03-11 | 2005-03-11 | 伝送線路型素子及びその作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004069120A JP4182016B2 (ja) | 2004-03-11 | 2004-03-11 | 伝送線路型素子及びその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005260569A true JP2005260569A (ja) | 2005-09-22 |
JP4182016B2 JP4182016B2 (ja) | 2008-11-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004069120A Expired - Fee Related JP4182016B2 (ja) | 2004-03-11 | 2004-03-11 | 伝送線路型素子及びその作製方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7545241B2 (ja) |
JP (1) | JP4182016B2 (ja) |
CN (1) | CN1930728A (ja) |
WO (1) | WO2005088762A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6206622B1 (ja) * | 2015-11-10 | 2017-10-04 | 新日鐵住金株式会社 | チタン材、セパレータおよび固体高分子形燃料電池 |
Families Citing this family (16)
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US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7989290B2 (en) | 2005-08-04 | 2011-08-02 | Micron Technology, Inc. | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps |
CN101855938B (zh) | 2007-09-10 | 2012-05-02 | 佛罗里达大学研究基金公司 | 发光晶体管和纵向场效应晶体管 |
WO2009047876A1 (ja) * | 2007-10-09 | 2009-04-16 | Panasonic Corporation | 回路装置 |
IT1392754B1 (it) * | 2008-12-18 | 2012-03-16 | St Microelectronics Srl | Nanoarray ad incrocio con strato organico attivo anisotropico |
JP4760930B2 (ja) * | 2009-02-27 | 2011-08-31 | 株式会社デンソー | Ic搭載基板、多層プリント配線板、及び製造方法 |
JP4798237B2 (ja) * | 2009-03-09 | 2011-10-19 | 株式会社デンソー | Ic搭載基板、及び多層プリント配線板 |
CN102447054B (zh) * | 2010-10-13 | 2014-05-07 | 中国科学院金属研究所 | 用碳包裹TaC的纳米胶囊制备的微型低温超低频信号元件 |
FR2989842B1 (fr) * | 2012-04-24 | 2015-07-17 | Univ Joseph Fourier | Ligne de propagation radiofrequence a ondes lentes |
KR102084288B1 (ko) | 2012-11-05 | 2020-03-03 | 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. | 디스플레이의 휘도 보상 |
CN103943916B (zh) * | 2014-05-16 | 2016-04-20 | 清华大学 | 一种基于准周期纳米线阵列的微波器件及其制作方法 |
US10007200B2 (en) | 2015-05-07 | 2018-06-26 | Xerox Corporation | Antimicrobial toner |
US10216111B2 (en) * | 2015-05-07 | 2019-02-26 | Xerox Corporation | Antimicrobial sulfonated polyester resin |
KR20200025917A (ko) * | 2018-08-31 | 2020-03-10 | 주식회사 센서뷰 | 전기방사에 의해 형성된 나노구조 물질을 이용한 전송선로 및 그 제조방법 |
JP7304366B2 (ja) * | 2018-11-28 | 2023-07-06 | ホシデン株式会社 | 高周波伝送装置及び高周波信号伝送方法 |
CN109802035B (zh) * | 2019-01-24 | 2023-04-28 | 北京印刷学院 | 一种基于忆阻器的神经突触仿生器件及制备方法 |
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JP2858073B2 (ja) * | 1992-12-28 | 1999-02-17 | ティーディーケイ株式会社 | 多層セラミック部品 |
JPH07202518A (ja) * | 1993-12-28 | 1995-08-04 | Oki Electric Ind Co Ltd | 高周波信号伝送用配線 |
JP3522097B2 (ja) * | 1997-12-25 | 2004-04-26 | 京セラ株式会社 | 積層型ストリップライン共振器 |
JPH11273997A (ja) * | 1998-03-18 | 1999-10-08 | Tdk Corp | 電子部品及びその製造方法 |
JP3549739B2 (ja) | 1998-08-27 | 2004-08-04 | 忠弘 大見 | プラズマ処理装置 |
JP3399432B2 (ja) | 1999-02-26 | 2003-04-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
JP2001217639A (ja) * | 2000-01-31 | 2001-08-10 | Toppan Forms Co Ltd | 非接触型データ送受信体用アンテナ |
JP4412837B2 (ja) * | 2000-09-28 | 2010-02-10 | 京セラ株式会社 | 積層型電子部品およびその製法 |
JP2002299924A (ja) * | 2001-03-30 | 2002-10-11 | Kyocera Corp | 積層型ストリップライン共振器 |
JP2003012377A (ja) * | 2001-06-28 | 2003-01-15 | Matsushita Electric Ind Co Ltd | 粉体製造方法および粉体製造装置 |
JP3674693B2 (ja) | 2001-10-09 | 2005-07-20 | 日本電気株式会社 | シールドストリップ線路型素子及びその製造方法 |
JP2003101311A (ja) * | 2001-09-20 | 2003-04-04 | Nec Corp | シールドストリップ線路型素子 |
JP2003257797A (ja) | 2002-02-27 | 2003-09-12 | Toshiba Corp | 電気二重層キャパシタ |
JP2004027134A (ja) | 2002-06-28 | 2004-01-29 | Kinseki Ltd | 導電性接着剤 |
CN1286716C (zh) * | 2003-03-19 | 2006-11-29 | 清华大学 | 一种生长碳纳米管的方法 |
US7129097B2 (en) * | 2004-07-29 | 2006-10-31 | International Business Machines Corporation | Integrated circuit chip utilizing oriented carbon nanotube conductive layers |
-
2004
- 2004-03-11 JP JP2004069120A patent/JP4182016B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-11 CN CNA2005800077553A patent/CN1930728A/zh active Pending
- 2005-03-11 US US10/592,008 patent/US7545241B2/en not_active Expired - Fee Related
- 2005-03-11 WO PCT/JP2005/004854 patent/WO2005088762A1/ja active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6206622B1 (ja) * | 2015-11-10 | 2017-10-04 | 新日鐵住金株式会社 | チタン材、セパレータおよび固体高分子形燃料電池 |
Also Published As
Publication number | Publication date |
---|---|
CN1930728A (zh) | 2007-03-14 |
JP4182016B2 (ja) | 2008-11-19 |
US7545241B2 (en) | 2009-06-09 |
US20070188275A1 (en) | 2007-08-16 |
WO2005088762A1 (ja) | 2005-09-22 |
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