JP2005236149A - 薄膜トランジスタの製造方法、電気光学装置の製造方法、薄膜トランジスタ及び電気光学装置。 - Google Patents
薄膜トランジスタの製造方法、電気光学装置の製造方法、薄膜トランジスタ及び電気光学装置。 Download PDFInfo
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- JP2005236149A JP2005236149A JP2004045425A JP2004045425A JP2005236149A JP 2005236149 A JP2005236149 A JP 2005236149A JP 2004045425 A JP2004045425 A JP 2004045425A JP 2004045425 A JP2004045425 A JP 2004045425A JP 2005236149 A JP2005236149 A JP 2005236149A
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Abstract
【解決手段】本発明の薄膜トランジスタの製造方法は、基板2上に、ソース電極3とドレイン電極4とを、基板に吸着させた帯電制御剤を光を使ってパターニングした後、選択的無電解メッキにより形成する工程と、有機半導体、ゲート絶縁体、ゲート電極とを形成する工程を含むものである。
【選択図】図1
Description
さらに、前記第二の工程における前記光は、前記帯電制御剤を分解するように照射されることが望ましい。また、前記光が真空紫外線であることが望ましい。
まず、本発明の薄膜トランジスタおよびその製造方法について説明する。
まず、本発明の薄膜トランジスタの第1構成について説明する。
まず、図1に示す薄膜トランジスタ1の第1製造方法(本発明の薄膜トランジスタの製造方法の第1の例)について説明する。
ここではソース電極3とドレイン電極4とを無電解メッキで作製する工程について説明する。図2は無電解めっきの各工程を説明する図である。
図2(B)に示すように、基板2の表面に界面活性剤21を設ける。基板2の一方の面の全部に界面活性剤21を設けてもよい。本例では、界面活性剤21は陽イオンとして表面に吸着する性質を有する。界面活性剤21として、カチオン系界面活性剤(カチオン界面活性剤及びそれと同等の性質を有するもの)を使用してもよい。本例では、基板2の表面電位は負電位であるので、カチオン系界面活性剤を使用すると、基板2の負電位を中和又は正電位に反転させることができる。つまり、この界面活性剤21は帯電制御剤として作用する。界面活性剤のみならず、表面に物理吸着、あるいは化学吸着して、表面電位を変化させる有機物質であれば、本発明に使用可能である。なお、界面活性剤を使用することによって、基板2の性質に依存することなく自由に表面電位の調整を行うことができ、また、表面電位を均一にして安定した電位面を形成することができる。
次に、ソース電極3およびドレイン電極4が形成された基板2を、例えば、水(純水等)、有機溶媒等を単独または適宜組み合わせて洗浄する。
次に、図3(B)に示すように、ソース電極3およびドレイン電極4が形成された基板2上に、ソース電極3およびドレイン電極4を覆うように、有機半導体層5を塗布法を用いて形成する。
次に、図3(C)に示すように、有機半導体層5上に、ゲート絶縁層6を塗布法を用いて形成する。
次に、図3(D)に示すように、ゲート絶縁層6上に、ゲート電極7を塗布法を用いて形成する。ゲート電極7はチャネル領域51を覆うように形成される。
図4は、図1に示す薄膜トランジスタ1の第2製造方法(本発明の薄膜トランジスタの製造方法の第2の例)を示す図である。本例では、上述した「第1製造方法」の一部、[A1]ソース電極およびドレイン電極形成工程中の界面活性剤21のパターニング[A1−III]と触媒30の吸着工程[A1−IV]とを、以下に示す[B1−III]と[B1−IV]とにそれぞれ変更した内容を説明する。[A1−III]と[A1−IV]との記述の一部を、以下に示す[B1−III]と[B1−IV]とにそれぞれ置き換える以外は、実質的に同一である。
次に、本発明の薄膜トランジスタの第2構成について説明する。
図6には薄膜トランジスタの第2構成、ボトムゲート構造の作製工程を示した。
図6(A)に示すように、メッキ液33a中でゲート電極を形成するために、以下に示す工程を実行する。
図6(B)に示すように、ゲート電極7a上にゲート絶縁層6aを形成する。既に説明した方法によって、ゲート絶縁層6aを形成する。溶液あるいは液体材料を塗布してゲート絶縁層5aを形成する塗布法が特に有効で、スピンコート法、インクジェット法がこれに相当する。図6(B)にはスピンコート法で、基板2a上に均一にゲート絶縁層6aを形成した状態を示す。
図6(C)に示すように、メッキ液33a中でソース電極3aとドレイン電極4aを形成するために、以下に示す工程を実行する。
ソース電極3aとドレイン電極4aの表面に付着した有機物を除去するために、酸素を含んだガス中で生成されるプラズマ中に基板2aを晒す。有機物は酸素と反応して炭酸ガスや水として電極表面から除去される。界面活性剤水溶液や有機溶剤による洗浄も有効であり、組み合わせることも可能である。
図6(D)に示すように、ゲート絶縁層6aとソース電極3aとドレイン電極4a上に有機半導体層5aを形成する。蒸着法でも可能であるが、有機半導体の溶液、あるいは前駆体の溶液を塗布して有機半導体層5aを形成する塗布法がより好適である。スピンコート法では最も高い生産性が得られる。その場合複数の薄膜トランジスタの間の領域にも半導体層が形成される。素子分離することがより望ましい用途では、この間の領域の有機半導体は除去される必要がある。インクジェット法を使えば容易に、個々のトランジスタに独立した有機半導体層5aが形成できるため、もっとも適した方法である。
次に、前述したような薄膜トランジスタ1、1aを備える電気光学装置について、電気泳動表示装置を一例に説明する。
このような電気泳動表示装置は、各種電子機器に組み込むことができる。以下、電気泳動表示装置を備える本発明の電子機器について説明する。
まず、本発明の電気泳動表示装置を電子ペーパーに適用した場合の実施形態について説明する。
次に、本発明の電気泳動表示装置をディスプレイに適用した場合の実施形態について説明する。
Claims (19)
- 基板の第一の領域に帯電制御剤を付着させる第一の工程と、
前記第一の領域の一部に光を照射する第二の工程と、
帯電した触媒または触媒前駆体を前記光が照射される被照射部または前記第一の領域のどちらか一方に選択的に吸着させる第三の工程と、
前記触媒または触媒前駆体が吸着された領域に金属塩溶液から金属層を析出させて電極を形成する第四の工程と、
前記電極上に半導体層を直接、または絶縁体層を介して形成する第五の工程とを備えることを特徴とする薄膜トランジスタの製造方法。 - 請求項1に記載の薄膜トランジスタの製造方法において、
前記帯電制御剤は有機帯電制御剤であり、
前記第一の工程では、前記有機帯電制御剤を、前記第一の領域に実質的に均一な第一の帯電状態を得るように付着させ、
前記第二の工程では、前記光を照射することで、光が照射される被照射部の帯電状態を前記第一の帯電状態と異なる状態に変化させることを特徴とする薄膜トランジスタの製造方法。 - 請求項1または2に記載の薄膜トランジスタの製造方法において、
前記第二の工程における前記光は、前記帯電制御剤を分解するように照射されることを特徴とする薄膜トランジスタの製造方法。 - 請求項1から3のいずれかに記載の薄膜トランジスタの製造方法において、
前記光が真空紫外線であることを特徴とする薄膜トランジスタの製造方法。 - 請求項1から4のいずれかに記載の薄膜トランジスタの製造方法において、
前記帯電制御剤が界面活性剤であることを特徴とする薄膜トランジスタの製造方法。 - 請求項5に記載の薄膜トランジスタの製造方法において、
前記界面活性剤がカチオン系界面活性剤であることを特徴とする薄膜トランジスタの製造方法。 - 請求項1から6のいずれかに記載の薄膜トランジスタの製造方法において、
前記触媒あるいは前記触媒前駆体がパラジウムを含むことを特徴とする薄膜トランジスタの製造方法。 - 請求項2に記載の薄膜トランジスタの製造方法において、
前記第一の帯電状態と前記被照射部の帯電状態との相違が、水中のゼータ電位の差として少なくとも10mV以上であることを特徴とする薄膜トランジスタの製造方法。 - 請求項1から8のいずれかに記載の薄膜トランジスタの製造方法において、
前記金属層がPt、Pd、Ni、CuまたはAuの少なくとも一つの金属を含むことを特徴とする薄膜トランジスタの製造方法。 - 請求項1から9のいずれかに記載の薄膜トランジスタの製造方法において、
前記半導体層が有機半導体からなることを特徴とする薄膜トランジスタの製造方法。 - 請求項10に記載の薄膜トランジスタの製造方法において、
前記有機半導体が溶液を塗布して得られることを特徴とする薄膜トランジスタの製造方法。 - 請求項11に記載の薄膜トランジスタの製造方法において、
前記有機半導体が共役性高分子であることを特徴とする薄膜トランジスタの製造方法。 - 請求項1から12に記載の薄膜トランジスタの製造方法において、
前記電極は、ソース電極およびドレイン電極であることを特徴とする薄膜トランジスタの製造方法。 - 請求項13に記載の薄膜トランジスタの製造方法において、
前記ソース電極と前記ドレイン電極との間の領域に重なるように、導電性材料の溶液または分散液を塗布してゲート電極を形成する工程とを備えることを特徴とする薄膜トランジスタの製造方法。 - 請求項14に記載の薄膜トランジスタの製造方法において、
インクジェット塗布法によって、前記導電性材料の溶液または分散液を塗布することを特徴とする薄膜トランジスタの製造方法。 - 請求項13に記載の薄膜トランジスタの製造方法において、
前記第一の工程の前に、ゲート電極を形成する工程及び前記ゲート電極上に絶縁層を形成する工程を備え、
前記絶縁体層上に前記ソース電極と前記ドレイン電極とを形成することを特徴とする薄膜トランジスタの製造方法。 - 電気光学物質を保持する基板を備えた電気光学装置の製造方法において、
前記基板の第一の領域に帯電制御剤を付着させる第一の工程と、
前記第一の領域の一部に光を照射する第二の工程と、
帯電した触媒または触媒前駆体を前記光が照射される被照射部または前記第一の領域のどちらか一方に選択的に吸着させる第三の工程と、
前記触媒または触媒前駆体が吸着された領域に金属塩溶液から金属層を析出させて電極を形成する第四の工程と、
前記電極上に半導体層を直接、または絶縁体層を介して形成する第五の工程とを備えることを特徴とする電気光学装置の製造方法。 - 請求項1から16のいずれかに記載の薄膜トランジスタの製造方法により製造されたことを特徴とする薄膜トランジスタ。
- 請求項18に記載の薄膜トランジスタを備えたことを特徴とする電気光学装置。
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