JPWO2021044705A1 - - Google Patents

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Publication number
JPWO2021044705A1
JPWO2021044705A1 JP2021543965A JP2021543965A JPWO2021044705A1 JP WO2021044705 A1 JPWO2021044705 A1 JP WO2021044705A1 JP 2021543965 A JP2021543965 A JP 2021543965A JP 2021543965 A JP2021543965 A JP 2021543965A JP WO2021044705 A1 JPWO2021044705 A1 JP WO2021044705A1
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JP
Japan
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JP2021543965A
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JP7534793B2 (ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
JP2021543965A 2019-09-03 2020-06-18 有機半導体デバイスのソース／ドレイン用電極、それを用いた有機半導体デバイス、及びそれらの製造方法 Active JP7534793B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019160732 2019-09-03
JP2019160732 2019-09-03
PCT/JP2020/023900 WO2021044705A1 (ja) 2019-09-03 2020-06-18 有機半導体デバイスのソース／ドレイン用電極、それを用いた有機半導体デバイス、及びそれらの製造方法

Publications (2)

Publication Number Publication Date
JPWO2021044705A1 true JPWO2021044705A1 (ja) 2021-03-11
JP7534793B2 JP7534793B2 (ja) 2024-08-15

Family

ID=74853168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021543965A Active JP7534793B2 (ja) 2019-09-03 2020-06-18 有機半導体デバイスのソース／ドレイン用電極、それを用いた有機半導体デバイス、及びそれらの製造方法

Country Status (7)

Country Link
US (1) US20220293874A1 (ja)
EP (1) EP4027373A4 (ja)
JP (1) JP7534793B2 (ja)
KR (1) KR20220057551A (ja)
CN (1) CN114424355A (ja)
TW (1) TW202111976A (ja)
WO (1) WO2021044705A1 (ja)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4267243B2 (ja) 2002-03-05 2009-05-27 出光興産株式会社 電界効果トランジスター、その製造方法及び該電界効果トランジスターを製造するための積層体
JP4407311B2 (ja) * 2004-02-20 2010-02-03 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2006073794A (ja) * 2004-09-02 2006-03-16 Victor Co Of Japan Ltd 電界効果トランジスタ及びその製造方法
JP5061449B2 (ja) * 2005-10-19 2012-10-31 ソニー株式会社 半導体装置の製造方法
JP2007115944A (ja) * 2005-10-21 2007-05-10 Victor Co Of Japan Ltd 有機薄膜トランジスタ
JP2008047776A (ja) 2006-08-18 2008-02-28 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2009130327A (ja) * 2007-11-28 2009-06-11 Seiko Epson Corp 半導体装置の製造方法、電子機器の製造方法、半導体装置および電子機器
US8530889B2 (en) * 2008-05-12 2013-09-10 Toray Industries, Inc. Carbon nanotube composite, organic semiconductor composite, and field-effect transistor
US9496315B2 (en) * 2009-08-26 2016-11-15 Universal Display Corporation Top-gate bottom-contact organic transistor
TW201119110A (en) * 2009-11-18 2011-06-01 Metal Ind Res & Dev Ct Fabrication method of organic thin-film transistors
WO2012071243A2 (en) * 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same
JP6048303B2 (ja) * 2013-04-25 2016-12-21 株式会社デンソー 有機半導体装置の製造方法
WO2015012107A1 (ja) * 2013-07-23 2015-01-29 トッパン・フォームズ株式会社 トランジスタ
US9818946B2 (en) * 2014-04-21 2017-11-14 Sumitomo Chemical Company, Limited Film and organic semiconductor device containing the film
KR102454094B1 (ko) * 2014-08-26 2022-10-14 가부시키가이샤 니콘 디바이스 제조 방법 및 전사 기판
JP6365835B2 (ja) * 2014-08-29 2018-08-01 国立大学法人 東京大学 電極形成方法
KR101778849B1 (ko) 2014-09-05 2017-09-14 주식회사 엘지화학 리튬 전극, 이를 포함하는 리튬 이차 전지, 상기 리튬 이차 전지를 포함하는 전지 모듈 및 리튬 전극의 제조방법
KR102144865B1 (ko) * 2015-08-13 2020-08-18 한국전자통신연구원 유기발광소자 및 그 제조 방법
JP2017157752A (ja) * 2016-03-03 2017-09-07 株式会社デンソー 有機トランジスタ
JP2018037486A (ja) * 2016-08-30 2018-03-08 Dic株式会社 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
EP4027373A1 (en) 2022-07-13
TW202111976A (zh) 2021-03-16
US20220293874A1 (en) 2022-09-15
WO2021044705A1 (ja) 2021-03-11
EP4027373A4 (en) 2023-10-04
KR20220057551A (ko) 2022-05-09
CN114424355A (zh) 2022-04-29
JP7534793B2 (ja) 2024-08-15

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