JP2005223008A - 半導体モジュール - Google Patents
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- JP2005223008A JP2005223008A JP2004027066A JP2004027066A JP2005223008A JP 2005223008 A JP2005223008 A JP 2005223008A JP 2004027066 A JP2004027066 A JP 2004027066A JP 2004027066 A JP2004027066 A JP 2004027066A JP 2005223008 A JP2005223008 A JP 2005223008A
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Abstract
【解決手段】 パワーMOSチップ(制御側素子)5及びパワーMOSチップ(同期整流側素子)及びこれらのチップに形成されたMOSFETのゲートを駆動するための駆動用ICチップ9が、フリップチップボンディングにより実装基板3に実装されている。パワーMOSチップ5の裏面上には、ヒートシンク53が配置されている。ヒートシンク53は駆動用ICチップ9を覆う位置まで延びている。樹脂部材61により、パワーMOSチップ5及び駆動用ICチップ9が一つのパッケージとして封止されている。
【選択図】 図9
Description
第1実施形態に係る半導体モジュールの構造について図1〜図3を用いて説明する。図1は、第1実施形態に係る半導体モジュール1の平面図である。図2は、図1のII(a)−II(b)線に沿った断面図であり、図3は、図1のIII(a)−III(b)線に沿った断面図である。
図8は、第2実施形態に係る半導体モジュール81の平面図である。図9は、図8のIX(a)−IX(b)線に沿った断面図である。図8及び図9を用いて、第2実施形態を第1実施形態と相違する点を中心に説明する。
第3実施形態では、SBD69が内蔵されたパワーMOSチップ(同期整流側素子)7を備えたことがこれまでの実施形態と異なる。図10は、第3実施形態に備えられるパワーMOSチップ(同期整流側素子)7の一部の断面図であり、図4と対応する。MOSFETの形成領域の終端85から所定の距離を離して、SBD69が形成されている。この所定の距離とは、MOSFETとSBDとが互いに干渉しない距離である。
図11は、第4実施形態に係る半導体装置91の平面図である。半導体装置91は、プリント基板93と、この上に実装された半導体モジュール95及びPWM制御用ICチップ97と、を備える。半導体モジュール95が図1に示す半導体モジュール1と異なる点は、次ぎの通りである。半導体モジュール1の駆動用ICチップ9にはPWM制御回路が内蔵されているが、半導体モジュール95の駆動用ICチップ9にはPWM制御回路が内蔵されていない。このため、第4実施形態では、PWM制御用ICチップ97を駆動用ICチップ9と別個に設けている。
図12は、第5実施形態に係る半導体装置101の一部の断面図である。半導体装置101は、プリント基板103に半導体モジュール105及びCPU107が実装された構造を有する。CPU107には、半導体モジュール101を含むDC−DCコンバータにより電力が供給される。
(1)実装基板と、
表面及び裏面を有すると共に前記表面が前記実装基板と面するように前記実装基板にフリップチップボンディングで実装された複数のパワーMISチップと、
前記実装基板にフリップチップボンディングで実装されると共に前記複数のパワーMISチップに形成されたMISFETのゲートを駆動するための駆動用ICチップと、
前記複数のパワーMISチップの前記裏面上に配置された複数のヒートシンクと、
前記複数のパワーMISチップ及び前記駆動用ICチップを一つのパッケージとして封止する樹脂部材と、を備える
ことを特徴とする半導体モジュール。
(2)前記複数のヒートシンクのうち少なくとも一つが、前記駆動用ICチップと絶縁されて前記駆動用ICチップの上まで延びている、
ことを特徴とする(1)に記載の半導体モジュール。
(3)前記駆動用ICチップは、前記駆動用ICチップの上まで延びている前記ヒートシンクが前記裏面上に配置されている前記パワーMISチップよりも厚みが薄い、
ことを特徴とする(2)に記載の半導体モジュール。
(4)前記駆動用ICチップの上まで延びている前記ヒートシンクは平坦である、
ことを特徴とする(3)に記載の半導体モジュール。
(5)前記複数のヒートシンクは、それぞれ、前記複数のパワーMISチップのうち対応するパワーMISチップの前記裏面のソース電極又はドレイン電極と電気的に接続されていると共に前記実装基板の端子と電気的に接続されている、
ことを特徴とする(1)に記載の半導体モジュール。
(6)前記複数のヒートシンクは、それぞれ、前記複数のパワーMISチップのうち対応するパワーMISチップの前記裏面と面する一方の面及びこれの反対側にある他方の面を有しており、
前記他方の面が前記半導体モジュールの外部に露出している、
ことを特徴とする(1)に記載の半導体モジュール。
(7)前記複数のパワーMISチップの前記表面にはゲート電極及びソース電極が形成されており、前記裏面にはドレイン電極が形成されている、
ことを特徴とする(1)に記載の半導体モジュール。
(8)前記駆動用ICチップはヒートシンクで覆われていない、
ことを特徴とする(1)に記載の半導体モジュール。
(9)前記複数のパワーMISチップのうち少なく一つのチップに前記MISFETと並列接続されたダイオードが内蔵されている、
ことを特徴とする(1)に記載の半導体モジュール。
(10)前記複数のヒートシンクの全体が前記樹脂部材で覆われている、
ことを特徴とする(1)に記載の半導体モジュール。
(11)実装基板と、
表面及び裏面を有すると共に前記表面が前記実装基板と面するように前記実装基板にフリップチップボンディングで実装されたパワーMISチップと、
前記実装基板にフリップチップボンディングで実装されると共に前記パワーMISチップに形成されたMISFETのゲートを駆動するための駆動用ICチップと、
前記パワーMISチップの前記裏面上に配置されると共に前記駆動用ICチップの上まで延びているヒートシンクと、
前記パワーMISチップ及び前記駆動用ICチップを一つのパッケージとして封止する樹脂部材と、を備える
ことを特徴とする半導体モジュール。
(12)実装基板と、
表面及び裏面を有すると共に前記表面が前記実装基板と面するように前記実装基板にフリップチップボンディングで実装されたパワーMISチップと、
前記実装基板にフリップチップボンディングで実装されると共に前記パワーMISチップに形成されたMISFETのゲートを駆動するための駆動用ICチップと、
前記パワーMISチップの前記裏面上に配置されると共に前記裏面及び前記実装基板の端子に電気的に接続されたヒートシンクと、
前記パワーMISチップ及び前記駆動用ICチップを一つのパッケージとして封止する樹脂部材と、を備える
ことを特徴とする半導体モジュール。
(13) (1)に記載の前記半導体モジュールを含む、
ことを特徴とするDC−DCコンバータ。
(14) (1)に記載の前記半導体モジュールと、
前記駆動用ICチップによる前記ゲートの駆動を、PWM(Pulse Width Modulation) 制御するPWM制御用ICチップと、を備える
ことを特徴とする半導体装置。
(15) (1)に記載の前記半導体モジュールを含むDC−DCコンバータと、
前記DC−DCコンバータにより電力が供給されるCPUと、
前記CPUの上に配置されると共に前記半導体モジュールを覆う位置まで延びる他のヒートシンクと、を備える
ことを特徴とする半導体装置。
Claims (5)
- 実装基板と、
表面及び裏面を有すると共に前記表面が前記実装基板と面するように前記実装基板にフリップチップボンディングで実装された複数のパワーMISチップと、
前記実装基板にフリップチップボンディングで実装されると共に前記複数のパワーMISチップに形成されたMISFETのゲートを駆動するための駆動用ICチップと、
前記複数のパワーMISチップの前記裏面上に配置された複数のヒートシンクと、
前記複数のパワーMISチップ及び前記駆動用ICチップを一つのパッケージとして封止する樹脂部材と、を備える
ことを特徴とする半導体モジュール。 - 前記複数のヒートシンクのうち少なくとも一つが、前記駆動用ICチップと絶縁されて前記駆動用ICチップの上まで延びている、
ことを特徴とする請求項1に記載の半導体モジュール。 - 前記複数のヒートシンクは、それぞれ、前記複数のパワーMISチップのうち対応するパワーMISチップの前記裏面のソース電極又はドレイン電極と電気的に接続されていると共に前記実装基板の端子と電気的に接続されている、
ことを特徴とする請求項1又は2に記載の半導体モジュール。 - 実装基板と、
表面及び裏面を有すると共に前記表面が前記実装基板と面するように前記実装基板にフリップチップボンディングで実装されたパワーMISチップと、
前記実装基板にフリップチップボンディングで実装されると共に前記パワーMISチップに形成されたMISFETのゲートを駆動するための駆動用ICチップと、
前記パワーMISチップの前記裏面上に配置されると共に前記駆動用ICチップの上まで延びているヒートシンクと、
前記パワーMISチップ及び前記駆動用ICチップを一つのパッケージとして封止する樹脂部材と、を備える
ことを特徴とする半導体モジュール。 - 実装基板と、
表面及び裏面を有すると共に前記表面が前記実装基板と面するように前記実装基板にフリップチップボンディングで実装されたパワーMISチップと、
前記実装基板にフリップチップボンディングで実装されると共に前記パワーMISチップに形成されたMISFETのゲートを駆動するための駆動用ICチップと、
前記パワーMISチップの前記裏面上に配置されると共に前記裏面及び前記実装基板の端子に電気的に接続されたヒートシンクと、
前記パワーMISチップ及び前記駆動用ICチップを一つのパッケージとして封止する樹脂部材と、を備える
ことを特徴とする半導体モジュール。
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JP2004027066A JP3809168B2 (ja) | 2004-02-03 | 2004-02-03 | 半導体モジュール |
US10/814,290 US7071550B2 (en) | 2004-02-03 | 2004-04-01 | Semiconductor module having heat sink serving as wiring line |
US11/299,812 US7372146B2 (en) | 2004-02-03 | 2005-12-13 | Semiconductor module |
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JP2004027066A JP3809168B2 (ja) | 2004-02-03 | 2004-02-03 | 半導体モジュール |
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Also Published As
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US20060097380A1 (en) | 2006-05-11 |
US20050167849A1 (en) | 2005-08-04 |
US7071550B2 (en) | 2006-07-04 |
US7372146B2 (en) | 2008-05-13 |
JP3809168B2 (ja) | 2006-08-16 |
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