JP2005210080A - 温度調節方法及び温度調節装置 - Google Patents

温度調節方法及び温度調節装置 Download PDF

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Publication number
JP2005210080A
JP2005210080A JP2004344150A JP2004344150A JP2005210080A JP 2005210080 A JP2005210080 A JP 2005210080A JP 2004344150 A JP2004344150 A JP 2004344150A JP 2004344150 A JP2004344150 A JP 2004344150A JP 2005210080 A JP2005210080 A JP 2005210080A
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JP
Japan
Prior art keywords
temperature
refrigerant
path
flow path
circulation
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004344150A
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English (en)
Japanese (ja)
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JP2005210080A5 (enExample
Inventor
Toshihisa Nozawa
俊久 野沢
Koji Kotani
光司 小谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004344150A priority Critical patent/JP2005210080A/ja
Priority to US10/583,847 priority patent/US20080271471A1/en
Priority to PCT/JP2004/019406 priority patent/WO2005064659A1/ja
Publication of JP2005210080A publication Critical patent/JP2005210080A/ja
Publication of JP2005210080A5 publication Critical patent/JP2005210080A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
    • F25D17/02—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2700/00—Sensing or detecting of parameters; Sensors therefor
    • F25B2700/21—Temperatures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D2400/00—General features of, or devices for refrigerators, cold rooms, ice-boxes, or for cooling or freezing apparatus not covered by any other subclass
    • F25D2400/02—Refrigerators including a heater
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices That Are Associated With Refrigeration Equipment (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Temperature (AREA)
JP2004344150A 2003-12-25 2004-11-29 温度調節方法及び温度調節装置 Pending JP2005210080A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004344150A JP2005210080A (ja) 2003-12-25 2004-11-29 温度調節方法及び温度調節装置
US10/583,847 US20080271471A1 (en) 2003-12-25 2004-12-24 Temperature Controlling Method for Substrate Processing System and Substrate Processing System
PCT/JP2004/019406 WO2005064659A1 (ja) 2003-12-25 2004-12-24 基板処理システムのための温度調節方法および基板処理システム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003430954 2003-12-25
JP2004344150A JP2005210080A (ja) 2003-12-25 2004-11-29 温度調節方法及び温度調節装置

Publications (2)

Publication Number Publication Date
JP2005210080A true JP2005210080A (ja) 2005-08-04
JP2005210080A5 JP2005210080A5 (enExample) 2008-01-17

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JP2004344150A Pending JP2005210080A (ja) 2003-12-25 2004-11-29 温度調節方法及び温度調節装置

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Country Link
US (1) US20080271471A1 (enExample)
JP (1) JP2005210080A (enExample)
WO (1) WO2005064659A1 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009168403A (ja) * 2008-01-18 2009-07-30 Nishiyama Corp チラー装置
JP2009287865A (ja) * 2008-05-30 2009-12-10 Yurikai Co Ltd 工場における複数負荷温調装置
JP2013167458A (ja) * 2012-02-14 2013-08-29 Seiko Epson Corp ハンドラー、及び部品検査装置
JP2015079930A (ja) * 2013-10-17 2015-04-23 テキスト カンパニー リミテッド 半導体製造設備のための温度制御システム
JP2017059714A (ja) * 2015-09-17 2017-03-23 株式会社日立国際電気 基板処理システム、半導体装置の製造方法、プログラム及び記録媒体
JP2017135316A (ja) * 2016-01-29 2017-08-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
KR101940287B1 (ko) * 2018-02-08 2019-01-18 (주)테키스트 반도체 제조용 온도 조절 장치
WO2021002228A1 (ja) * 2019-07-01 2021-01-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP2021132101A (ja) * 2020-02-19 2021-09-09 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102339630B1 (ko) * 2021-02-16 2021-12-23 ㈜엑스포 반도체 공정용 칠러
US12500101B2 (en) 2020-02-19 2025-12-16 Tokyo Electron Limited Temperature control system and system of processing substrate

Families Citing this family (18)

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Publication number Priority date Publication date Assignee Title
JP4564973B2 (ja) * 2007-01-26 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5032269B2 (ja) * 2007-11-02 2012-09-26 東京エレクトロン株式会社 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置
WO2010039773A1 (en) * 2008-09-30 2010-04-08 Vette Corp. Free-cooling including modular coolant distribution unit
JP5570938B2 (ja) * 2009-12-11 2014-08-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
US9338871B2 (en) * 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US20110269314A1 (en) * 2010-04-30 2011-11-03 Applied Materials, Inc. Process chambers having shared resources and methods of use thereof
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
JP5750304B2 (ja) * 2011-05-18 2015-07-22 株式会社日立製作所 電子機器の冷却システム
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
US9957601B2 (en) * 2013-03-15 2018-05-01 Applied Materials, Inc. Apparatus for gas injection in a physical vapor deposition chamber
JP6080952B2 (ja) * 2013-05-31 2017-02-15 三菱電機株式会社 熱媒体変換装置、及び、この熱媒体変換装置を備えた空気調和装置
JP5841281B1 (ja) * 2015-06-15 2016-01-13 伸和コントロールズ株式会社 プラズマ処理装置用チラー装置
US10662529B2 (en) * 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
IL275149B2 (en) 2017-12-20 2024-12-01 Technetics Group Llc Deposition Processing Systems Having Active Temperature Control and Associated Methods
CN115786868A (zh) * 2022-08-30 2023-03-14 新倍司特系统科技(苏州)有限公司 一种均匀涂覆低温涂层的设备及方法
GB2639898A (en) * 2024-03-27 2025-10-08 Element Six Tech Ltd Microwave Plasma reactor

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JPH11183005A (ja) * 1997-12-24 1999-07-06 Innotech Corp チラー装置
JP2000284832A (ja) * 1999-03-31 2000-10-13 Komatsu Ltd 温度制御装置及び同装置のバルブ制御部

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JPH0529261A (ja) * 1991-07-19 1993-02-05 Hitachi Ltd ステージ温調装置
FR2716959B1 (fr) * 1994-03-04 1996-05-15 Thermique Generale Vinicole Ensemble de distribution et/ou collection de froid et/ou de chaud.
US6062485A (en) * 1998-04-22 2000-05-16 Erie Manufacturing Company Radiant heating system reset control

Patent Citations (3)

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JPH05163096A (ja) * 1991-12-11 1993-06-29 Applied Materials Japan Kk 半導体製造装置における冷凍機を用いた真空装置の電極の低温温度コントロールシステム
JPH11183005A (ja) * 1997-12-24 1999-07-06 Innotech Corp チラー装置
JP2000284832A (ja) * 1999-03-31 2000-10-13 Komatsu Ltd 温度制御装置及び同装置のバルブ制御部

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009168403A (ja) * 2008-01-18 2009-07-30 Nishiyama Corp チラー装置
JP2009287865A (ja) * 2008-05-30 2009-12-10 Yurikai Co Ltd 工場における複数負荷温調装置
JP2013167458A (ja) * 2012-02-14 2013-08-29 Seiko Epson Corp ハンドラー、及び部品検査装置
JP2015079930A (ja) * 2013-10-17 2015-04-23 テキスト カンパニー リミテッド 半導体製造設備のための温度制御システム
JP2017059714A (ja) * 2015-09-17 2017-03-23 株式会社日立国際電気 基板処理システム、半導体装置の製造方法、プログラム及び記録媒体
JP2017135316A (ja) * 2016-01-29 2017-08-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
CN107026101A (zh) * 2016-01-29 2017-08-08 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法
US9818630B2 (en) 2016-01-29 2017-11-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus
KR101940287B1 (ko) * 2018-02-08 2019-01-18 (주)테키스트 반도체 제조용 온도 조절 장치
WO2021002228A1 (ja) * 2019-07-01 2021-01-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP2021132101A (ja) * 2020-02-19 2021-09-09 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7277400B2 (ja) 2020-02-19 2023-05-18 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2023100841A (ja) * 2020-02-19 2023-07-19 東京エレクトロン株式会社 温度制御システム及び基板処理システム
US11817334B2 (en) 2020-02-19 2023-11-14 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
TWI824232B (zh) * 2020-02-19 2023-12-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
JP7450087B2 (ja) 2020-02-19 2024-03-14 東京エレクトロン株式会社 温度制御システム及び基板処理システム
TWI838324B (zh) * 2020-02-19 2024-04-01 日商東京威力科創股份有限公司 溫度控制系統及基板處理系統
US12500101B2 (en) 2020-02-19 2025-12-16 Tokyo Electron Limited Temperature control system and system of processing substrate
KR102339630B1 (ko) * 2021-02-16 2021-12-23 ㈜엑스포 반도체 공정용 칠러

Also Published As

Publication number Publication date
US20080271471A1 (en) 2008-11-06
WO2005064659A1 (ja) 2005-07-14

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