JP2005194585A - 基板の湿式処理方法及び基板処理装置 - Google Patents
基板の湿式処理方法及び基板処理装置 Download PDFInfo
- Publication number
- JP2005194585A JP2005194585A JP2004002862A JP2004002862A JP2005194585A JP 2005194585 A JP2005194585 A JP 2005194585A JP 2004002862 A JP2004002862 A JP 2004002862A JP 2004002862 A JP2004002862 A JP 2004002862A JP 2005194585 A JP2005194585 A JP 2005194585A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solution
- catalyst
- acidic solution
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 428
- 238000000034 method Methods 0.000 title abstract description 76
- 230000008569 process Effects 0.000 title abstract description 47
- 239000000243 solution Substances 0.000 claims abstract description 282
- 239000003929 acidic solution Substances 0.000 claims abstract description 114
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 238000005507 spraying Methods 0.000 claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims description 164
- 238000012545 processing Methods 0.000 claims description 114
- 239000007788 liquid Substances 0.000 claims description 91
- 239000007921 spray Substances 0.000 claims description 67
- 150000007524 organic acids Chemical class 0.000 claims description 41
- 238000007772 electroless plating Methods 0.000 claims description 40
- 238000010306 acid treatment Methods 0.000 claims description 32
- 238000003672 processing method Methods 0.000 claims description 25
- 150000007522 mineralic acids Chemical class 0.000 claims description 24
- -1 organic acid salt Chemical class 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 9
- 230000003197 catalytic effect Effects 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 105
- 239000007789 gas Substances 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000007747 plating Methods 0.000 description 151
- 239000010408 film Substances 0.000 description 111
- 238000004140 cleaning Methods 0.000 description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 37
- 230000001681 protective effect Effects 0.000 description 32
- 239000000463 material Substances 0.000 description 21
- 229910021642 ultra pure water Inorganic materials 0.000 description 21
- 239000012498 ultrapure water Substances 0.000 description 21
- 239000002253 acid Substances 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 238000001035 drying Methods 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 13
- 238000004458 analytical method Methods 0.000 description 12
- 239000010953 base metal Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000012805 post-processing Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 210000000078 claw Anatomy 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000002738 chelating agent Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000001603 reducing effect Effects 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004448 titration Methods 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 4
- 238000005251 capillar electrophoresis Methods 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000012266 salt solution Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 239000008155 medical solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003381 solubilizing effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 description 1
- 229940005631 hypophosphite ion Drugs 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- UYDPQDSKEDUNKV-UHFFFAOYSA-N phosphanylidynetungsten Chemical compound [W]#P UYDPQDSKEDUNKV-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012089 stop solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004879 turbidimetry Methods 0.000 description 1
Images
Landscapes
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemically Coating (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004002862A JP2005194585A (ja) | 2004-01-08 | 2004-01-08 | 基板の湿式処理方法及び基板処理装置 |
| US11/029,675 US20050208774A1 (en) | 2004-01-08 | 2005-01-06 | Wet processing method and processing apparatus of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004002862A JP2005194585A (ja) | 2004-01-08 | 2004-01-08 | 基板の湿式処理方法及び基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005194585A true JP2005194585A (ja) | 2005-07-21 |
| JP2005194585A5 JP2005194585A5 (enExample) | 2007-02-15 |
Family
ID=34817929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004002862A Pending JP2005194585A (ja) | 2004-01-08 | 2004-01-08 | 基板の湿式処理方法及び基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005194585A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250915A (ja) * | 2006-03-16 | 2007-09-27 | Ebara Corp | 基板処理方法および基板処理装置 |
| JP2010232520A (ja) * | 2009-03-27 | 2010-10-14 | Dainippon Screen Mfg Co Ltd | 処理液供給装置および処理液供給方法 |
| JP2012129525A (ja) * | 2010-12-15 | 2012-07-05 | Siltronic Ag | シリコンからなる半導体ウェハを半導体ウェハの研磨のプロセス直後に洗浄するための方法 |
| JP2018011087A (ja) * | 2017-10-20 | 2018-01-18 | 株式会社荏原製作所 | 基板洗浄装置 |
| US10192757B2 (en) | 2013-07-03 | 2019-01-29 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
| CN111441040A (zh) * | 2018-12-26 | 2020-07-24 | 株式会社杰希优 | 树脂膜的湿式处理装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05148658A (ja) * | 1991-11-22 | 1993-06-15 | Sumitomo Metal Mining Co Ltd | 無電解錫めつき方法 |
| JPH0770767A (ja) * | 1993-09-01 | 1995-03-14 | Mitsubishi Gas Chem Co Inc | 銅張積層板用表面処理液および表面処理法 |
| JPH11335858A (ja) * | 1998-05-27 | 1999-12-07 | Yuji Shikamata | 銀鏡面の形成方法及びその溶液 |
| JP2000104182A (ja) * | 1998-09-30 | 2000-04-11 | Seiko Epson Corp | ウェットエッチング方法および装置、インクジェットヘッドの振動板の製造方法、インクジェットヘッド、並びにインクジェット記録装置 |
| JP2003303804A (ja) * | 2002-04-10 | 2003-10-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
-
2004
- 2004-01-08 JP JP2004002862A patent/JP2005194585A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05148658A (ja) * | 1991-11-22 | 1993-06-15 | Sumitomo Metal Mining Co Ltd | 無電解錫めつき方法 |
| JPH0770767A (ja) * | 1993-09-01 | 1995-03-14 | Mitsubishi Gas Chem Co Inc | 銅張積層板用表面処理液および表面処理法 |
| JPH11335858A (ja) * | 1998-05-27 | 1999-12-07 | Yuji Shikamata | 銀鏡面の形成方法及びその溶液 |
| JP2000104182A (ja) * | 1998-09-30 | 2000-04-11 | Seiko Epson Corp | ウェットエッチング方法および装置、インクジェットヘッドの振動板の製造方法、インクジェットヘッド、並びにインクジェット記録装置 |
| JP2003303804A (ja) * | 2002-04-10 | 2003-10-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250915A (ja) * | 2006-03-16 | 2007-09-27 | Ebara Corp | 基板処理方法および基板処理装置 |
| JP2010232520A (ja) * | 2009-03-27 | 2010-10-14 | Dainippon Screen Mfg Co Ltd | 処理液供給装置および処理液供給方法 |
| JP2012129525A (ja) * | 2010-12-15 | 2012-07-05 | Siltronic Ag | シリコンからなる半導体ウェハを半導体ウェハの研磨のプロセス直後に洗浄するための方法 |
| US10192757B2 (en) | 2013-07-03 | 2019-01-29 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
| JP2018011087A (ja) * | 2017-10-20 | 2018-01-18 | 株式会社荏原製作所 | 基板洗浄装置 |
| CN111441040A (zh) * | 2018-12-26 | 2020-07-24 | 株式会社杰希优 | 树脂膜的湿式处理装置 |
| CN111441040B (zh) * | 2018-12-26 | 2024-06-11 | 株式会社杰希优 | 树脂膜的湿式处理装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20050208774A1 (en) | Wet processing method and processing apparatus of substrate | |
| JP4425801B2 (ja) | 基板処理装置 | |
| US7407821B2 (en) | Substrate processing method | |
| WO2005071138A1 (ja) | 基板処理方法及び触媒処理液及び基板処理装置 | |
| EP1496542A2 (en) | Method and apparatus for forming capping film | |
| JP2005264245A (ja) | 基板の湿式処理方法及び処理装置 | |
| US20040219298A1 (en) | Substrate processing method and substrate processing apparatus | |
| JP2005133187A (ja) | めっき装置及びめっき方法 | |
| JP2005194585A (ja) | 基板の湿式処理方法及び基板処理装置 | |
| US20040258848A1 (en) | Method and apparatus for processing a substrate | |
| JP2007051346A (ja) | 無電解めっき装置及びめっき液 | |
| JP2005194613A (ja) | 基板の湿式処理方法及び処理装置 | |
| JP2007126756A (ja) | 無電解めっき装置及び無電解めっき方法 | |
| JP2004300576A (ja) | 基板処理方法及び基板処理装置 | |
| JP4503401B2 (ja) | 金属膜の成膜方法及び配線の形成方法 | |
| JP2005060722A (ja) | 基板処理方法及び基板処理装置 | |
| JP4663965B2 (ja) | 基板処理方法及び基板処理装置 | |
| US7878144B2 (en) | Electroless plating apparatus and electroless plating method | |
| US20050022909A1 (en) | Substrate processing method and substrate processing apparatus | |
| JP2004304021A (ja) | 半導体装置の製造方法及び製造装置 | |
| JP2005243845A (ja) | 基板処理方法及び基板処理装置 | |
| JP2005002443A (ja) | めっき方法及びめっき装置 | |
| JP2005206905A (ja) | 基板処理方法及び装置、並びに処理液 | |
| JP2004346399A (ja) | 基板処理方法及び基板処理装置 | |
| JP2004010961A (ja) | 基板処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061226 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061226 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070531 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090915 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100126 |