JP2005175209A - 基板処理装置 - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】 基板を順方向に搬送して露光装置へ基板を渡す順方向専用経路R1 (第1の基板搬送経路)とは別に露光後加熱(PEB)を行うPEB専用の基板搬送経路R2 (第2の基板搬送経路)を構成することで、各々の経路R1 ,R2 での搬送を独立して行うことができる。なお、所定の基板搬送機構として第4の主搬送機構Dを介在させて、基板を一時的に収納する仮置き部であるバッファRBFと所定の処理部に相当する露光後加熱(PEB)とを並べて受渡点にそれぞれ配設することで、バッファRBFとPEBとの間で基板を搬送する経路R2 を構成するので、そのPEBでの基板処理を円滑に行うことができる。同様に、バッファRBFへの基板の搬送を円滑に行うことができる。
【選択図】 図11
Description
すなわち、請求項1に記載の発明は、基板処理を行う処理部と、処理部に対して基板の受け渡しを行う基板搬送機構とを備えた基板処理装置であって、基板の受け渡しを行うための受渡点を介在させて、複数の基板搬送機構を並べて配設することで、処理部間で基板を搬送する経路である第1の基板搬送経路を構成するとともに、所定の基板搬送機構を介在させて、基板を一時的に収納する仮置き部と所定の処理部とを並べて受渡点にそれぞれ配設することで、仮置き部と所定の処理部との間で基板を搬送する経路である第2の基板搬送経路を別に構成することを特徴とするものである。
すなわち、請求項5に記載の発明は、請求項1から請求項4のいずれかに記載の基板処理装置において、前記処理部と、前記基板処理装置に連設された外部処理として機能する露光装置との間で搬送するように前記第1の基板搬送経路を構成しており、前記所定の処理部は、露光装置で処理された露光後の基板に対して加熱処理を行う露光後加熱処理部であって、前記仮置き部とその露光後加熱処理部との間で基板を受け渡して搬送するように前記第2の基板搬送経路を構成することを特徴とするものである。
図1は、実施例1に係る基板処理装置の平面図であり、図2は、その正面図であり、図3は、熱処理部の正面図である。
図12は、実施例2に係る基板処理装置の平面図であり、図13は、その正面図であり、図14は、熱処理部の正面図であり、図15は、装置のセル配置を示した平面図であり、図16は、第1〜第4の主搬送機構による基板搬送の流れを示した図である。
図17は、実施例3に係る基板処理装置の平面図であり、図18は、その正面図であり、図19は、熱処理部の正面図であり、図20は、装置のセル配置を示した平面図であり、図21は、第1〜第4の主搬送機構による基板搬送の流れを示した図である。
C1 …インデクサセル
C2 …反射防止膜用処理セル
C3 …レジスト膜用処理セル
C4 …現像処理セル
C5 …露光後加熱用処理セル
C6 …インターフェイスセル
W …基板
RBF …基板戻し用のバッファ
R1 …順方向専用経路
R2 …PEB専用の基板搬送経路
Claims (8)
- 基板処理を行う処理部と、処理部に対して基板の受け渡しを行う基板搬送機構とを備えた基板処理装置であって、
基板の受け渡しを行うための受渡点を介在させて、複数の基板搬送機構を並べて配設することで、処理部間で基板を搬送する経路である第1の基板搬送経路を構成するとともに、
所定の基板搬送機構を介在させて、基板を一時的に収納する仮置き部と所定の処理部とを並べて受渡点にそれぞれ配設することで、仮置き部と所定の処理部との間で基板を搬送する経路である第2の基板搬送経路を別に構成することを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
一部の経路において重複するように前記第1および第2の基板搬送経路をそれぞれ構成することを特徴とする基板処理装置。 - 請求項2に記載の基板処理装置において、
同一の前記基板搬送機構を共用して、前記第1および第2の基板搬送経路をそれぞれ構成することを特徴とする基板処理装置。 - 請求項2に記載の基板処理装置において、
個別に異なる前記基板搬送機構を用いて、前記第1および第2の基板搬送経路をそれぞれ構成することを特徴とする基板処理装置。 - 請求項1から請求項4のいずれかに記載の基板処理装置において、
前記処理部と、前記基板処理装置に連設された外部処理として機能する露光装置との間で搬送するように前記第1の基板搬送経路を構成しており、
前記所定の処理部は、露光装置で処理された露光後の基板に対して加熱処理を行う露光後加熱処理部であって、
前記仮置き部とその露光後加熱処理部との間で基板を受け渡して搬送するように前記第2の基板搬送経路を構成することを特徴とする基板処理装置。 - 請求項5に記載の基板処理装置において、
基板を順方向に搬送して前記露光装置へ基板を渡す順方向専用経路として、前記第1の基板搬送経路を構成することを特徴とする基板処理装置。 - 請求項5に記載の基板処理装置において、
基板を逆方向に搬送して前記露光装置から基板を受け取る逆方向専用経路として、前記第1の基板搬送経路を構成することを特徴とする基板処理装置。 - 請求項5から請求項7のいずれかに記載の基板処理装置において、
基板を冷却処理する冷却処理部を備え、
その冷却処理部と前記仮置き部と露光後加熱処理部との間で基板を受け渡して搬送するように前記第2の基板搬送経路を構成することを特徴とする基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003413275A JP4381121B2 (ja) | 2003-12-11 | 2003-12-11 | 基板処理装置 |
US11/008,842 US7323060B2 (en) | 2003-12-11 | 2004-12-10 | Substrate treating apparatus |
CNB2007100968506A CN100495642C (zh) | 2003-12-11 | 2004-12-11 | 基板处理装置 |
CNB2004101032576A CN100364047C (zh) | 2003-12-11 | 2004-12-11 | 基板处理装置 |
US11/948,198 US7549811B2 (en) | 2003-12-11 | 2007-11-30 | Substrate treating apparatus |
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JP2003413275A JP4381121B2 (ja) | 2003-12-11 | 2003-12-11 | 基板処理装置 |
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JP2005175209A true JP2005175209A (ja) | 2005-06-30 |
JP4381121B2 JP4381121B2 (ja) | 2009-12-09 |
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JP2003413275A Expired - Fee Related JP4381121B2 (ja) | 2003-12-11 | 2003-12-11 | 基板処理装置 |
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US (2) | US7323060B2 (ja) |
JP (1) | JP4381121B2 (ja) |
CN (2) | CN100495642C (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201178A (ja) * | 2006-01-26 | 2007-08-09 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2007287887A (ja) * | 2006-04-14 | 2007-11-01 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
JP2010123732A (ja) * | 2008-11-19 | 2010-06-03 | Tokyo Electron Ltd | インターフェイス装置 |
JP2011077549A (ja) * | 2010-12-27 | 2011-04-14 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004257980A (ja) * | 2003-02-27 | 2004-09-16 | Mire Kk | 半導体素子テスト用ハンドラ |
US7766566B2 (en) * | 2005-08-03 | 2010-08-03 | Tokyo Electron Limited | Developing treatment apparatus and developing treatment method |
JP5006122B2 (ja) | 2007-06-29 | 2012-08-22 | 株式会社Sokudo | 基板処理装置 |
JP5065167B2 (ja) * | 2007-09-20 | 2012-10-31 | 東京エレクトロン株式会社 | 基板の処理方法及び基板の処理システム |
JP5128918B2 (ja) | 2007-11-30 | 2013-01-23 | 株式会社Sokudo | 基板処理装置 |
JP5160204B2 (ja) * | 2007-11-30 | 2013-03-13 | 株式会社Sokudo | 基板処理装置 |
JP5318403B2 (ja) | 2007-11-30 | 2013-10-16 | 株式会社Sokudo | 基板処理装置 |
JP5179170B2 (ja) * | 2007-12-28 | 2013-04-10 | 株式会社Sokudo | 基板処理装置 |
JP5001828B2 (ja) | 2007-12-28 | 2012-08-15 | 株式会社Sokudo | 基板処理装置 |
CN101783308B (zh) * | 2009-01-16 | 2011-11-09 | 台湾积体电路制造股份有限公司 | 组合式晶片储存盒的储存机台 |
CN101794710B (zh) | 2009-01-30 | 2012-10-03 | 细美事有限公司 | 用于处理基板的系统及方法 |
US20100192844A1 (en) * | 2009-01-30 | 2010-08-05 | Semes Co., Ltd. | Apparatus and method for treating substrate |
JP5223778B2 (ja) * | 2009-05-28 | 2013-06-26 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
US8847122B2 (en) * | 2009-06-08 | 2014-09-30 | Macronix International Co., Ltd. | Method and apparatus for transferring substrate |
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JP6123740B2 (ja) * | 2014-06-17 | 2017-05-10 | トヨタ自動車株式会社 | 半導体装置の製造ライン及び半導体装置の製造方法 |
KR101681636B1 (ko) * | 2014-11-28 | 2016-12-02 | 세메스 주식회사 | 에지 노광 장치 및 방법, 기판 처리 장치 |
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JP3032999B2 (ja) | 1992-11-09 | 2000-04-17 | 東京エレクトロン株式会社 | 処理装置 |
DE69404778T2 (de) * | 1993-07-16 | 1997-12-18 | Semiconductor Systems Inc | Thermische Behandlungsmodul für Beschichtungs/Entwicklungseinrichtung für Substrat |
JPH0817724A (ja) | 1994-06-30 | 1996-01-19 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP3462426B2 (ja) * | 1999-05-24 | 2003-11-05 | 東京エレクトロン株式会社 | 基板処理装置 |
US6402401B1 (en) * | 1999-10-19 | 2002-06-11 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
JP3559219B2 (ja) * | 2000-05-09 | 2004-08-25 | 東京エレクトロン株式会社 | 塗布現像処理システム及び塗布現像処理方法 |
JP3556882B2 (ja) * | 2000-05-10 | 2004-08-25 | 東京エレクトロン株式会社 | 塗布現像処理システム |
JP2005510055A (ja) * | 2001-11-13 | 2005-04-14 | エフエスアイ インターナショナル インコーポレイテッド | マイクロエレクトロニクス基板の自動処理用の低減フットプリントツール |
JP4342147B2 (ja) * | 2002-05-01 | 2009-10-14 | 大日本スクリーン製造株式会社 | 基板処理装置 |
-
2003
- 2003-12-11 JP JP2003413275A patent/JP4381121B2/ja not_active Expired - Fee Related
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2004
- 2004-12-10 US US11/008,842 patent/US7323060B2/en active Active
- 2004-12-11 CN CNB2007100968506A patent/CN100495642C/zh active Active
- 2004-12-11 CN CNB2004101032576A patent/CN100364047C/zh active Active
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2007
- 2007-11-30 US US11/948,198 patent/US7549811B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201178A (ja) * | 2006-01-26 | 2007-08-09 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2007287887A (ja) * | 2006-04-14 | 2007-11-01 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
JP2010123732A (ja) * | 2008-11-19 | 2010-06-03 | Tokyo Electron Ltd | インターフェイス装置 |
JP2011077549A (ja) * | 2010-12-27 | 2011-04-14 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
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US20050161159A1 (en) | 2005-07-28 |
CN101034666A (zh) | 2007-09-12 |
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JP4381121B2 (ja) | 2009-12-09 |
CN100364047C (zh) | 2008-01-23 |
US7549811B2 (en) | 2009-06-23 |
US7323060B2 (en) | 2008-01-29 |
CN100495642C (zh) | 2009-06-03 |
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