JP2005167243A - 配線基板及びこれを利用した固体撮像用半導体装置 - Google Patents
配線基板及びこれを利用した固体撮像用半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 222
- 239000007787 solid Substances 0.000 title claims abstract description 6
- 238000003384 imaging method Methods 0.000 claims description 146
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 235000014676 Phragmites communis Nutrition 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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Abstract
【解決手段】 小型化された固体撮像用半導体装置が提供される。この固体撮像用半導体装置は、半導体チップが実装される所定の部分に開口部が形成された本体部と、本体部の内側面から内側に突出して形成されたリードまたは/及びタイバーで構成された配線基板を含む。
【選択図】 図2A
Description
205 配線基板
210 レンズ部
215 固体撮像用レンズ
220 赤外線遮断用フィルター
240 リード
250 本体部
255 開口部
Claims (26)
- 半導体チップが実装される領域を定義する開口部を具備する本体部と;
一端が前記本体部の内側面から前記開口部内に突出し、他端が前記本体部の底面と連結されるリードと;
を含むことを特徴とする配線基板。 - 前記本体部の内側面から前記開口部内に突出して形成されて、その先端部が前記半導体チップの上面と接着されるタイバーをさらに含むことを特徴とする請求項1に記載の配線基板。
- 半導体チップが実装される領域を定義する開口部が形成されて、内側面に段差部が形成された本体部と;
一端が前記本体部の上部内側面から前記開口部内に突出し、他端が前記本体部の底面と連結される第1リードと;
一端が前記本体部の段差部から前記開口部内に突出し、他端が前記本体部の底面と連結される第2リードと;
を含むことを特徴とする配線基板。 - 前記本体部の上部内側面から前記開口部内に突出して形成されて、その先端部が前記半導体チップの上面と接着されるタイバーをさらに含むことを特徴とする請求項3に記載の配線基板。
- 固体撮像用レンズを具備するレンズ部と;
開口部が形成された本体部と、一端が前記本体部の内側面から前記開口部内に突出して他端が前記本体部の底面と連結されたリードと、を具備し、前記固体撮像用レンズと前記開口部とが対向するように前記レンズ部と連結された配線基板と;
前記開口部内に配置されて、前記リードの一端と電気的に連結されて、前記固体撮像用レンズからの光を画像信号に変換して前記画像信号を処理する半導体チップと;
を含むことを特徴とする固体撮像用半導体装置。 - 前記リードの一端は前記半導体チップの上面と接着されることを特徴とする請求項5に記載の固体撮像用半導体装置。
- 前記リードの一端と前記半導体チップとは、ワイヤーボンディング、バンプ、ソルダボール、異方性伝導フィルムまたは異方性伝導樹脂から構成されたグループより選択されたいずれか一つの電気的接続手段により連結することを特徴とする請求項6に記載の固体撮像用半導体装置。
- 前記半導体チップと本体部との間は絶縁性封止樹脂で封止されることを特徴とする請求項7に記載の固体撮像用半導体装置。
- 前記固体撮像用レンズと所定の間隔を置いて対向しており、前記固体撮像用レンズと前記半導体チップとの間に位置して前記レンズ部内に固定位置する赤外線遮断用フィルターをさらに含むことを特徴とする請求項7に記載の固体撮像用半導体装置。
- 前記本体部の内側面から前記開口部内に突出して形成されて、その先端部が前記半導体チップの上面と接着されるタイバーをさらに含むことを特徴とする請求項5に記載の固体撮像用半導体装置。
- 前記タイバーは前記リードと同一物質からなることを特徴とする請求項10に記載の固体撮像用半導体装置。
- 前記リードの一端と前記半導体チップとは、ワイヤーボンディング、バンプ、ソルダボール、異方性伝導フィルムまたは異方性伝導樹脂から構成されたグループより選択されたいずれか一つの電気的接続手段により連結することを特徴とする請求項10に記載の固体撮像用半導体装置。
- 前記半導体チップと本体部との間は絶縁性封止樹脂で封止されることを特徴とする請求項12に記載の固体撮像用半導体装置。
- 前記固体撮像用レンズと所定の間隔を置いて対向しており、前記固体撮像用レンズと前記半導体チップとの間に位置して前記レンズ部内に固定位置する赤外線遮断用フィルターをさらに含むことを特徴とする請求項12に記載の固体撮像用半導体装置。
- 固体撮像用レンズを具備するレンズ部と;
開口部が形成されて内側面に段差部が形成された本体部と、一端が前記本体部の上部内側面から前記開口部内に突出して他端が前記本体部の底面と連結される第1リードと、一端が前記本体部の段差部から前記開口部内に突出して他端が前記本体部の底面と連結される第2リードと、を具備し、前記固体撮像用レンズと前記開口部とが対向するように前記レンズ部と連結された配線基板と;
前記開口部内に配置されて、前記第1リードの一端と電気的に連結されて、前記固体撮像用レンズからの光を画像信号に変換する第1半導体チップと;
前記開口部内の前記第1半導体チップ下部に配置されて、前記第2リードの一端と電気的に連結されて、前記画像信号を処理する第2半導体チップと;
を含むことを特徴とする固体撮像用半導体装置。 - 前記第1リードの一端は前記第1半導体チップの上面と接着されることを特徴とする請求項15に記載の固体撮像用半導体装置。
- 前記第1リードの一端と前記第1半導体チップとは、ワイヤーボンディング、バンプ、ソルダボール、異方性伝導フィルムまたは異方性伝導樹脂から構成されたグループより選択されたいずれか一つの電気的接続手段により連結することを特徴とする請求項16に記載の固体撮像用半導体装置。
- 前記第2リードの一端と前記第2半導体チップとは、ワイヤーボンディング、バンプ、ソルダボール、異方性伝導フィルムまたは異方性伝導樹脂から構成されたグループより選択されたいずれか一つの電気的接続手段により連結することを特徴とする請求項17に記載の固体撮像用半導体装置。
- 前記第1及び第2半導体チップと本体部との間は絶縁性封止樹脂で封止されることを特徴とする請求項17に記載の固体撮像用半導体装置。
- 前記固体撮像用レンズと所定の間隔を置いて対向しており、前記固体撮像用レンズと前記第1半導体チップとの間に位置して前記レンズ部内に固定位置する赤外線遮断用フィルターをさらに含むことを特徴とする請求項17に記載の固体撮像用半導体装置。
- 前記本体部の内側面から前記開口部内に突出して形成されて、その先端部が前記第1半導体チップの上面と接着されるタイバーをさらに含むことを特徴とする請求項15に記載の固体撮像用半導体装置。
- 前記タイバーは前記リードと同一物質からなることを特徴とする請求項21に記載の固体撮像用半導体装置。
- 前記第1リードの一端と前記第1半導体チップとは、ワイヤーボンディング、バンプ、ソルダボール、異方性伝導フィルムまたは異方性伝導樹脂から構成されたグループより選択されたいずれか一つの電気的接続手段により連結することを特徴とする請求項21に記載の固体撮像用半導体装置。
- 前記第2リードの一端と前記第2半導体チップとは、ワイヤーボンディング、バンプ、ソルダボール、異方性伝導フィルムまたは異方性伝導樹脂から構成されたグループより選択されたいずれか一つの電気的接続手段により連結することを特徴とする請求項23に記載の固体撮像用半導体装置。
- 前記第1及び第2半導体チップと本体部との間は絶縁性封止樹脂で封止されることを特徴とする請求項23に記載の固体撮像用半導体装置。
- 前記固体撮像用レンズと所定の間隔を置いて対向しており、前記固体撮像用レンズと前記第1半導体チップとの間に位置して前記レンズ部内に固定位置する赤外線遮断用フィルターをさらに含むことを特徴とする請求項23に記載の固体撮像用半導体装置。
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Also Published As
Publication number | Publication date |
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CN100444396C (zh) | 2008-12-17 |
KR100541654B1 (ko) | 2006-01-12 |
JP5259912B2 (ja) | 2013-08-07 |
US20050116142A1 (en) | 2005-06-02 |
US7579583B2 (en) | 2009-08-25 |
CN1624905A (zh) | 2005-06-08 |
KR20050053201A (ko) | 2005-06-08 |
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