JP2005109242A5 - - Google Patents

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Publication number
JP2005109242A5
JP2005109242A5 JP2003342456A JP2003342456A JP2005109242A5 JP 2005109242 A5 JP2005109242 A5 JP 2005109242A5 JP 2003342456 A JP2003342456 A JP 2003342456A JP 2003342456 A JP2003342456 A JP 2003342456A JP 2005109242 A5 JP2005109242 A5 JP 2005109242A5
Authority
JP
Japan
Prior art keywords
layer
magnetoresistive effect
domain wall
effect element
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003342456A
Other languages
English (en)
Japanese (ja)
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JP2005109242A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003342456A priority Critical patent/JP2005109242A/ja
Priority claimed from JP2003342456A external-priority patent/JP2005109242A/ja
Priority to US10/882,322 priority patent/US7184247B2/en
Publication of JP2005109242A publication Critical patent/JP2005109242A/ja
Publication of JP2005109242A5 publication Critical patent/JP2005109242A5/ja
Priority to US11/679,814 priority patent/US7733611B2/en
Pending legal-status Critical Current

Links

JP2003342456A 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド Pending JP2005109242A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003342456A JP2005109242A (ja) 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド
US10/882,322 US7184247B2 (en) 2003-09-30 2004-07-02 Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same
US11/679,814 US7733611B2 (en) 2003-09-30 2007-02-27 Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003342456A JP2005109242A (ja) 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド

Publications (2)

Publication Number Publication Date
JP2005109242A JP2005109242A (ja) 2005-04-21
JP2005109242A5 true JP2005109242A5 (enExample) 2006-11-16

Family

ID=34373500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003342456A Pending JP2005109242A (ja) 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド

Country Status (2)

Country Link
US (2) US7184247B2 (enExample)
JP (1) JP2005109242A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109243A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
JP4827839B2 (ja) * 2004-06-21 2011-11-30 ノキア コーポレイション Ｈｓｄｐａ／ｆ−ｄｐｃｈにおける失われたシグナリング接続のリカバリ方法
US7356909B1 (en) * 2004-09-29 2008-04-15 Headway Technologies, Inc. Method of forming a CPP magnetic recording head with a self-stabilizing vortex configuration
US7583482B2 (en) * 2004-11-30 2009-09-01 Tdk Corporation Magnetoresistive element and magnetoresistive device having a free layer stabilized by an in-stack bias
JP2007220850A (ja) * 2006-02-16 2007-08-30 Fujitsu Ltd 積層磁性膜および磁気ヘッド
WO2011013249A1 (ja) * 2009-07-31 2011-02-03 株式会社 東芝 磁気抵抗効果素子
JP2013033881A (ja) * 2011-08-03 2013-02-14 Sony Corp 記憶素子及び記憶装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225179B1 (ko) * 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
JP3293437B2 (ja) * 1995-12-19 2002-06-17 松下電器産業株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子
US6590750B2 (en) * 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
KR100466975B1 (ko) * 1996-05-28 2005-07-01 가부시키가이샤 시마쓰세사쿠쇼 자기저항효과소자, 자기저항효과형헤드, 메모리소자 및 그 제조방법
JPH11510911A (ja) 1996-06-12 1999-09-21 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 磁気抵抗式磁界センサ
US6052262A (en) * 1997-03-14 2000-04-18 Kabushiki Kaisha Toshiba Magneto-resistance effect element and magnetic head
US6579635B2 (en) * 2000-10-12 2003-06-17 International Business Machines Corporation Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
JP2002314168A (ja) * 2001-04-18 2002-10-25 Fujitsu Ltd Ｃｐｐ構造電磁変換素子およびその製造方法
US6937447B2 (en) * 2001-09-19 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
JP3967237B2 (ja) 2001-09-19 2007-08-29 株式会社東芝 磁気抵抗効果素子及びその製造方法、磁気再生素子並びに磁気メモリ
US7035062B1 (en) * 2001-11-29 2006-04-25 Seagate Technology Llc Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
JP2003218425A (ja) * 2002-01-18 2003-07-31 Hitachi Ltd 有限電圧下で高磁気抵抗率を示す強磁性トンネル接合素子、および、それを用いた強磁気抵抗効果型ヘッド、磁気ヘッドスライダ、ならびに磁気ディスク装置
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
JP4487472B2 (ja) * 2002-07-05 2010-06-23 株式会社日立製作所 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
US7218484B2 (en) * 2002-09-11 2007-05-15 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
JP2005109240A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
US20050136600A1 (en) * 2003-12-22 2005-06-23 Yiming Huai Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
JP2005191101A (ja) * 2003-12-24 2005-07-14 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
ES2249974B1 (es) * 2004-03-01 2007-06-01 Consejo Sup. Investig. Cientificas Dispositivo spintronico magnetoresistivo, su procedimiento de fabricacion y sus aplicaciones.

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