JP2004220692A5 - - Google Patents
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- Publication number
- JP2004220692A5 JP2004220692A5 JP2003006662A JP2003006662A JP2004220692A5 JP 2004220692 A5 JP2004220692 A5 JP 2004220692A5 JP 2003006662 A JP2003006662 A JP 2003006662A JP 2003006662 A JP2003006662 A JP 2003006662A JP 2004220692 A5 JP2004220692 A5 JP 2004220692A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- ferromagnetic layer
- terminal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000005291 magnetic effect Effects 0.000 claims 41
- 230000005294 ferromagnetic effect Effects 0.000 claims 32
- 239000004065 semiconductor Substances 0.000 claims 13
- 230000005415 magnetization Effects 0.000 claims 7
- 230000004888 barrier function Effects 0.000 claims 6
- 230000005290 antiferromagnetic effect Effects 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003006662A JP4147118B2 (ja) | 2003-01-15 | 2003-01-15 | ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置 |
| US10/374,089 US6934133B2 (en) | 2003-01-15 | 2003-02-27 | Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003006662A JP4147118B2 (ja) | 2003-01-15 | 2003-01-15 | ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004220692A JP2004220692A (ja) | 2004-08-05 |
| JP2004220692A5 true JP2004220692A5 (enExample) | 2005-10-20 |
| JP4147118B2 JP4147118B2 (ja) | 2008-09-10 |
Family
ID=32709083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003006662A Expired - Fee Related JP4147118B2 (ja) | 2003-01-15 | 2003-01-15 | ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6934133B2 (enExample) |
| JP (1) | JP4147118B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002198583A (ja) * | 2000-12-26 | 2002-07-12 | Hitachi Ltd | 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド |
| US7061725B2 (en) * | 2003-12-01 | 2006-06-13 | Seagate Technology Llc | Magnetic read sensor with stripe width and stripe height control |
| TWI283477B (en) * | 2004-11-16 | 2007-07-01 | Ind Tech Res Inst | Magnetic random access memory with lower switching field |
| JP2006196687A (ja) * | 2005-01-13 | 2006-07-27 | Tdk Corp | 磁気メモリ |
| US7719069B2 (en) * | 2005-05-10 | 2010-05-18 | Hitachi Global Storage Technologies Netherlands B.V. | Three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body |
| US7071010B1 (en) | 2005-05-10 | 2006-07-04 | Hitachi Global Storage Technologies Netherlands B.V. | Methods of making a three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body |
| JP4599259B2 (ja) * | 2005-09-20 | 2010-12-15 | 株式会社東芝 | 磁気素子及びこれを用いた磁気信号処理装置 |
| US8760817B2 (en) * | 2009-05-22 | 2014-06-24 | HGST Netherlands B.V. | Three-terminal design for spin accumulation magnetic sensor |
| JP5338714B2 (ja) * | 2010-02-24 | 2013-11-13 | Ｔｄｋ株式会社 | 磁気センサー、磁気検出装置、及び磁気ヘッド |
| JP2012039010A (ja) | 2010-08-10 | 2012-02-23 | Tdk Corp | 磁気センサー及び磁気検出装置 |
| JP2012028798A (ja) * | 2011-09-14 | 2012-02-09 | Sony Corp | メモリ |
| US8901576B2 (en) | 2012-01-18 | 2014-12-02 | International Business Machines Corporation | Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer |
| US8884386B2 (en) * | 2012-02-02 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device and fabrication method thereof |
| JP5597899B2 (ja) * | 2012-09-21 | 2014-10-01 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| CN104347226B (zh) * | 2013-07-23 | 2017-05-10 | 中国科学院物理研究所 | 一种基于磁性斯格明子层的磁性多层膜 |
| WO2015111681A1 (ja) * | 2014-01-23 | 2015-07-30 | 国立研究開発法人理化学研究所 | 磁気素子及びスキルミオンメモリ |
| WO2019159428A1 (ja) | 2018-02-19 | 2019-08-22 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
| CN110392931B (zh) | 2018-02-19 | 2022-05-03 | Tdk株式会社 | 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件及磁存储器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206590A (en) | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
| US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
| US6134089A (en) * | 1999-03-11 | 2000-10-17 | Read-Rite Corporation | Current perpendicular to plane magnetoresistive device with low resistance lead |
| JP2003281705A (ja) * | 2002-03-25 | 2003-10-03 | Hitachi Ltd | 磁気ヘッド、磁気ヘッドジンバルアッセンブリ、磁気記録再生装置及び磁性メモリ |
| US6870717B2 (en) * | 2002-05-16 | 2005-03-22 | Hitachi Global Storage Technologies Netherlands B.V. | Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step |
-
2003
- 2003-01-15 JP JP2003006662A patent/JP4147118B2/ja not_active Expired - Fee Related
- 2003-02-27 US US10/374,089 patent/US6934133B2/en not_active Expired - Fee Related
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