JP4147118B2 - ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置 - Google Patents

３端子型磁気ヘッドとそれを搭載した磁気記録再生装置 Download PDF

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Publication number
JP4147118B2
JP4147118B2 JP2003006662A JP2003006662A JP4147118B2 JP 4147118 B2 JP4147118 B2 JP 4147118B2 JP 2003006662 A JP2003006662 A JP 2003006662A JP 2003006662 A JP2003006662 A JP 2003006662A JP 4147118 B2 JP4147118 B2 JP 4147118B2
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Japan
Prior art keywords
layer
ferromagnetic layer
magnetic
electrode
terminal
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Expired - Fee Related
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JP2003006662A
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English (en)
Japanese (ja)
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JP2004220692A5 (enExample
JP2004220692A (ja
Inventor
純 早川
顕知 伊藤
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Hitachi Ltd
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Hitachi Ltd
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Publication date
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Priority to JP2003006662A priority Critical patent/JP4147118B2/ja
Priority to US10/374,089 priority patent/US6934133B2/en
Publication of JP2004220692A publication Critical patent/JP2004220692A/ja
Publication of JP2004220692A5 publication Critical patent/JP2004220692A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP2003006662A 2003-01-15 2003-01-15 ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置 Expired - Fee Related JP4147118B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003006662A JP4147118B2 (ja) 2003-01-15 2003-01-15 ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置
US10/374,089 US6934133B2 (en) 2003-01-15 2003-02-27 Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003006662A JP4147118B2 (ja) 2003-01-15 2003-01-15 ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置

Publications (3)

Publication Number Publication Date
JP2004220692A JP2004220692A (ja) 2004-08-05
JP2004220692A5 JP2004220692A5 (enExample) 2005-10-20
JP4147118B2 true JP4147118B2 (ja) 2008-09-10

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JP2003006662A Expired - Fee Related JP4147118B2 (ja) 2003-01-15 2003-01-15 ３端子型磁気ヘッドとそれを搭載した磁気記録再生装置

Country Status (2)

Country Link
US (1) US6934133B2 (enExample)
JP (1) JP4147118B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198583A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 強磁性トンネル型磁気抵抗効果素子及び磁気ヘッド
US7061725B2 (en) * 2003-12-01 2006-06-13 Seagate Technology Llc Magnetic read sensor with stripe width and stripe height control
TWI283477B (en) * 2004-11-16 2007-07-01 Ind Tech Res Inst Magnetic random access memory with lower switching field
JP2006196687A (ja) * 2005-01-13 2006-07-27 Tdk Corp 磁気メモリ
US7719069B2 (en) * 2005-05-10 2010-05-18 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body
US7071010B1 (en) 2005-05-10 2006-07-04 Hitachi Global Storage Technologies Netherlands B.V. Methods of making a three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body
JP4599259B2 (ja) * 2005-09-20 2010-12-15 株式会社東芝 磁気素子及びこれを用いた磁気信号処理装置
US8760817B2 (en) * 2009-05-22 2014-06-24 HGST Netherlands B.V. Three-terminal design for spin accumulation magnetic sensor
JP5338714B2 (ja) * 2010-02-24 2013-11-13 Ｔｄｋ株式会社 磁気センサー、磁気検出装置、及び磁気ヘッド
JP2012039010A (ja) 2010-08-10 2012-02-23 Tdk Corp 磁気センサー及び磁気検出装置
JP2012028798A (ja) * 2011-09-14 2012-02-09 Sony Corp メモリ
US8901576B2 (en) 2012-01-18 2014-12-02 International Business Machines Corporation Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer
US8884386B2 (en) * 2012-02-02 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
JP5597899B2 (ja) * 2012-09-21 2014-10-01 株式会社東芝 磁気抵抗素子および磁気メモリ
CN104347226B (zh) * 2013-07-23 2017-05-10 中国科学院物理研究所 一种基于磁性斯格明子层的磁性多层膜
WO2015111681A1 (ja) * 2014-01-23 2015-07-30 国立研究開発法人理化学研究所 磁気素子及びスキルミオンメモリ
WO2019159428A1 (ja) 2018-02-19 2019-08-22 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
CN110392931B (zh) 2018-02-19 2022-05-03 Tdk株式会社 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件及磁存储器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US6134089A (en) * 1999-03-11 2000-10-17 Read-Rite Corporation Current perpendicular to plane magnetoresistive device with low resistance lead
JP2003281705A (ja) * 2002-03-25 2003-10-03 Hitachi Ltd 磁気ヘッド、磁気ヘッドジンバルアッセンブリ、磁気記録再生装置及び磁性メモリ
US6870717B2 (en) * 2002-05-16 2005-03-22 Hitachi Global Storage Technologies Netherlands B.V. Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step

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Publication number Publication date
US20040136120A1 (en) 2004-07-15
US6934133B2 (en) 2005-08-23
JP2004220692A (ja) 2004-08-05

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