JP2005109242A - 磁気抵抗効果素子及び磁気ヘッド - Google Patents

磁気抵抗効果素子及び磁気ヘッド Download PDF

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Publication number
JP2005109242A
JP2005109242A JP2003342456A JP2003342456A JP2005109242A JP 2005109242 A JP2005109242 A JP 2005109242A JP 2003342456 A JP2003342456 A JP 2003342456A JP 2003342456 A JP2003342456 A JP 2003342456A JP 2005109242 A JP2005109242 A JP 2005109242A
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Japan
Prior art keywords
layer
magnetoresistive effect
effect element
ferromagnetic
domain wall
Prior art date
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Pending
Application number
JP2003342456A
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English (en)
Japanese (ja)
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JP2005109242A5 (enExample
Inventor
Toshitake Sato
勇武 佐藤
Rachid Sbiaa
ラシド シビア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
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TDK Corp
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Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2003342456A priority Critical patent/JP2005109242A/ja
Priority to US10/882,322 priority patent/US7184247B2/en
Publication of JP2005109242A publication Critical patent/JP2005109242A/ja
Publication of JP2005109242A5 publication Critical patent/JP2005109242A5/ja
Priority to US11/679,814 priority patent/US7733611B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
JP2003342456A 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド Pending JP2005109242A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003342456A JP2005109242A (ja) 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド
US10/882,322 US7184247B2 (en) 2003-09-30 2004-07-02 Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same
US11/679,814 US7733611B2 (en) 2003-09-30 2007-02-27 Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003342456A JP2005109242A (ja) 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド

Publications (2)

Publication Number Publication Date
JP2005109242A true JP2005109242A (ja) 2005-04-21
JP2005109242A5 JP2005109242A5 (enExample) 2006-11-16

Family

ID=34373500

Family Applications (1)

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JP2003342456A Pending JP2005109242A (ja) 2003-09-30 2003-09-30 磁気抵抗効果素子及び磁気ヘッド

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US (2) US7184247B2 (enExample)
JP (1) JP2005109242A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011013249A1 (ja) * 2009-07-31 2011-02-03 株式会社 東芝 磁気抵抗効果素子

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109243A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
JP4827839B2 (ja) * 2004-06-21 2011-11-30 ノキア コーポレイション Ｈｓｄｐａ／ｆ−ｄｐｃｈにおける失われたシグナリング接続のリカバリ方法
US7356909B1 (en) * 2004-09-29 2008-04-15 Headway Technologies, Inc. Method of forming a CPP magnetic recording head with a self-stabilizing vortex configuration
US7583482B2 (en) * 2004-11-30 2009-09-01 Tdk Corporation Magnetoresistive element and magnetoresistive device having a free layer stabilized by an in-stack bias
JP2007220850A (ja) * 2006-02-16 2007-08-30 Fujitsu Ltd 積層磁性膜および磁気ヘッド
JP2013033881A (ja) * 2011-08-03 2013-02-14 Sony Corp 記憶素子及び記憶装置

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Publication number Priority date Publication date Assignee Title
KR100225179B1 (ko) * 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
JP3293437B2 (ja) * 1995-12-19 2002-06-17 松下電器産業株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子
US6590750B2 (en) * 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
KR100466975B1 (ko) * 1996-05-28 2005-07-01 가부시키가이샤 시마쓰세사쿠쇼 자기저항효과소자, 자기저항효과형헤드, 메모리소자 및 그 제조방법
JPH11510911A (ja) 1996-06-12 1999-09-21 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 磁気抵抗式磁界センサ
US6052262A (en) * 1997-03-14 2000-04-18 Kabushiki Kaisha Toshiba Magneto-resistance effect element and magnetic head
US6579635B2 (en) * 2000-10-12 2003-06-17 International Business Machines Corporation Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
JP2002314168A (ja) * 2001-04-18 2002-10-25 Fujitsu Ltd Ｃｐｐ構造電磁変換素子およびその製造方法
US6937447B2 (en) * 2001-09-19 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
JP3967237B2 (ja) 2001-09-19 2007-08-29 株式会社東芝 磁気抵抗効果素子及びその製造方法、磁気再生素子並びに磁気メモリ
US7035062B1 (en) * 2001-11-29 2006-04-25 Seagate Technology Llc Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
JP2003218425A (ja) * 2002-01-18 2003-07-31 Hitachi Ltd 有限電圧下で高磁気抵抗率を示す強磁性トンネル接合素子、および、それを用いた強磁気抵抗効果型ヘッド、磁気ヘッドスライダ、ならびに磁気ディスク装置
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
JP4487472B2 (ja) * 2002-07-05 2010-06-23 株式会社日立製作所 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
US7218484B2 (en) * 2002-09-11 2007-05-15 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
JP2005109240A (ja) * 2003-09-30 2005-04-21 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
US20050136600A1 (en) * 2003-12-22 2005-06-23 Yiming Huai Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
JP2005191101A (ja) * 2003-12-24 2005-07-14 Tdk Corp 磁気抵抗効果素子及び磁気ヘッド
ES2249974B1 (es) * 2004-03-01 2007-06-01 Consejo Sup. Investig. Cientificas Dispositivo spintronico magnetoresistivo, su procedimiento de fabricacion y sus aplicaciones.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011013249A1 (ja) * 2009-07-31 2011-02-03 株式会社 東芝 磁気抵抗効果素子
US8363362B2 (en) 2009-07-31 2013-01-29 Kabushiki Kaisha Toshiba Magnetoresistive element

Also Published As

Publication number Publication date
US7184247B2 (en) 2007-02-27
US20080247097A1 (en) 2008-10-09
US20050068689A1 (en) 2005-03-31
US7733611B2 (en) 2010-06-08

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