JP2005103339A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005103339A5 JP2005103339A5 JP2003336026A JP2003336026A JP2005103339A5 JP 2005103339 A5 JP2005103339 A5 JP 2005103339A5 JP 2003336026 A JP2003336026 A JP 2003336026A JP 2003336026 A JP2003336026 A JP 2003336026A JP 2005103339 A5 JP2005103339 A5 JP 2005103339A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- insulating layer
- thin film
- film transistor
- discharged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 6
- 238000007599 discharging Methods 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 4
- 239000000178 monomer Substances 0.000 claims 4
- 239000011347 resin Substances 0.000 claims 4
- 229920005989 resin Polymers 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 125000001153 fluoro group Chemical group F* 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 238000009751 slip forming Methods 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003336026A JP4498715B2 (ja) | 2003-09-26 | 2003-09-26 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003336026A JP4498715B2 (ja) | 2003-09-26 | 2003-09-26 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005103339A JP2005103339A (ja) | 2005-04-21 |
| JP2005103339A5 true JP2005103339A5 (enExample) | 2006-10-26 |
| JP4498715B2 JP4498715B2 (ja) | 2010-07-07 |
Family
ID=34532296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003336026A Expired - Fee Related JP4498715B2 (ja) | 2003-09-26 | 2003-09-26 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4498715B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1890322A3 (en) * | 2006-08-15 | 2012-02-15 | Kovio, Inc. | Printed dopant layers |
| US8937013B2 (en) | 2006-10-17 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor |
| JP5254589B2 (ja) * | 2006-10-17 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5352967B2 (ja) * | 2006-11-17 | 2013-11-27 | 株式会社リコー | 多層配線構造の製造方法及び多層配線構造 |
| JP4438790B2 (ja) | 2006-11-17 | 2010-03-24 | ソニー株式会社 | 画素回路および表示装置、並びに画素回路の製造方法 |
| JP4661864B2 (ja) * | 2007-12-25 | 2011-03-30 | セイコーエプソン株式会社 | 膜パターン形成方法及び発光装置の製造方法 |
| JP5219612B2 (ja) * | 2008-05-12 | 2013-06-26 | パナソニック株式会社 | 半導体貫通電極形成方法 |
| US9668355B2 (en) * | 2013-03-15 | 2017-05-30 | Hzo Inc. | Combining different types of moisture-resistant materials |
| JP6459019B2 (ja) * | 2014-05-22 | 2019-01-30 | ナガセケムテックス株式会社 | 封止用積層シートおよびその製造方法ならびに封止用積層シートを用いて封止された実装構造体およびその製造方法 |
| JP7188216B2 (ja) * | 2019-03-25 | 2022-12-13 | 住友金属鉱山株式会社 | 金属電着用の陰極板の製造方法 |
| JP7188217B2 (ja) * | 2019-03-25 | 2022-12-13 | 住友金属鉱山株式会社 | 金属電着用の陰極板の製造方法 |
| JP2020167023A (ja) * | 2019-03-29 | 2020-10-08 | 住友化学株式会社 | 有機ｅｌデバイス用隔壁付基板の製造方法及び有機ｅｌデバイスの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2640910B2 (ja) * | 1993-07-14 | 1997-08-13 | 株式会社フロンテック | 電子素子およびその製造方法 |
| JP3725169B2 (ja) * | 1996-05-15 | 2005-12-07 | セイコーエプソン株式会社 | 塗布膜を有する薄膜デバイスの製造方法 |
| JPH11163499A (ja) * | 1997-11-28 | 1999-06-18 | Nitto Boseki Co Ltd | プリント配線板の製造方法及びこの製造方法によるプリント配線板 |
| JP3907957B2 (ja) * | 2001-03-26 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 薄膜半導体デバイス及び薄膜半導体デバイスの作製方法 |
| JP2003224138A (ja) * | 2002-01-30 | 2003-08-08 | Matsushita Electric Ind Co Ltd | 液晶表示素子の製造方法およびこれを用いた液晶表示装置 |
-
2003
- 2003-09-26 JP JP2003336026A patent/JP4498715B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Choi et al. | Reduced water vapor transmission rate of graphene gas barrier films for flexible organic field-effect transistors | |
| Mao et al. | A van der Waals integrated damage‐free memristor based on layered 2d hexagonal boron nitride | |
| JP2005103339A5 (enExample) | ||
| GB0211424D0 (en) | Circuit fabrication method | |
| JP2003347543A5 (enExample) | ||
| TW200833732A (en) | Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process | |
| TWI456663B (zh) | 顯示裝置之製造方法 | |
| TW201041051A (en) | Thin film transistor and method for manufacturing thin film transistor | |
| JP2005136383A5 (enExample) | ||
| JP2005167228A5 (enExample) | ||
| Kang et al. | Fully Drawn All‐Organic Flexible Transistors Prepared by Capillary Pen Printing on Flexible Planar and Curvilinear Substrates | |
| CN102623639B (zh) | 一步实现图案化和自修饰界面的有机薄膜晶体管制备方法 | |
| JP2006344956A5 (enExample) | ||
| JP2004014875A5 (enExample) | ||
| JP2006054425A5 (enExample) | ||
| JP2006100808A5 (enExample) | ||
| JP2008536295A5 (enExample) | ||
| JP2005244205A5 (enExample) | ||
| JP2010135793A5 (enExample) | ||
| CN109742089B (zh) | 显示基板、显示装置和显示基板的制造方法 | |
| US7259047B2 (en) | Method for manufacturing organic thin-film transistor with plastic substrate | |
| JP2005203569A5 (enExample) | ||
| JP2005159328A5 (enExample) | ||
| JP2002094064A5 (enExample) | ||
| JP2005167212A5 (enExample) |