JP2005101549A - 高温対流加熱を利用する半導体基板表面の準備工程 - Google Patents

高温対流加熱を利用する半導体基板表面の準備工程 Download PDF

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Publication number
JP2005101549A
JP2005101549A JP2004232390A JP2004232390A JP2005101549A JP 2005101549 A JP2005101549 A JP 2005101549A JP 2004232390 A JP2004232390 A JP 2004232390A JP 2004232390 A JP2004232390 A JP 2004232390A JP 2005101549 A JP2005101549 A JP 2005101549A
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Japan
Prior art keywords
wafer
semiconductor wafer
heating
gas
measuring instrument
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JP2004232390A
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English (en)
Japanese (ja)
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JP2005101549A5 (enExample
Inventor
Michael J Adams
マイケル・ジェイ・アダムス
Jr James Healy
ジェームズ・ヒーリー・ジュニア
William H Howland Jr
ウィリアム・エイチ・ホーランド・ジュニア
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Solid State Measurements Inc
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Solid State Measurements Inc
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Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Publication of JP2005101549A publication Critical patent/JP2005101549A/ja
Publication of JP2005101549A5 publication Critical patent/JP2005101549A5/ja
Pending legal-status Critical Current

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    • H10P72/0604—
    • H10P72/0434—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2004232390A 2003-08-08 2004-08-09 高温対流加熱を利用する半導体基板表面の準備工程 Pending JP2005101549A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/637,447 US7063992B2 (en) 2003-08-08 2003-08-08 Semiconductor substrate surface preparation using high temperature convection heating

Publications (2)

Publication Number Publication Date
JP2005101549A true JP2005101549A (ja) 2005-04-14
JP2005101549A5 JP2005101549A5 (enExample) 2007-09-13

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JP2004232390A Pending JP2005101549A (ja) 2003-08-08 2004-08-09 高温対流加熱を利用する半導体基板表面の準備工程

Country Status (4)

Country Link
US (1) US7063992B2 (enExample)
EP (1) EP1505636A3 (enExample)
JP (1) JP2005101549A (enExample)
TW (1) TW200507015A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4270457B2 (ja) * 2004-03-10 2009-06-03 大日本スクリーン製造株式会社 有機物除去装置および膜厚測定装置
US8669497B2 (en) * 2007-03-30 2014-03-11 Tokyo Electron Limited Apparatus and method for predictive temperature correction during thermal processing
GB201321423D0 (en) * 2013-12-04 2014-01-15 Metryx Ltd Semiconductor wafer processing methods and apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106050A (ja) * 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd 半導体装置の測定方法およびプローブ装置
JPH07273157A (ja) * 1994-03-30 1995-10-20 Hitachi Ltd 半導体装置の検査装置及び半導体装置の検査方法
JP2000164648A (ja) * 1998-11-25 2000-06-16 Miyazaki Oki Electric Co Ltd 電気的特性測定用装置および電気的特性測定方法
JP2000162268A (ja) * 1998-11-27 2000-06-16 Advantest Corp 電子部品の温度印加方法および電子部品試験装置
JP2003028924A (ja) * 2001-07-13 2003-01-29 Advantest Corp 電子部品ハンドリング装置および電子部品の温度制御方法
JP2003098052A (ja) * 2001-09-21 2003-04-03 Hitachi Plant Eng & Constr Co Ltd 吸着試験片の収納容器

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20614A (en) * 1858-06-22 Preventing cabs from running omf the track
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
JPS63129633A (ja) 1986-11-20 1988-06-02 Fujitsu Ltd 半導体表面処理方法
JPH0228322A (ja) * 1988-04-28 1990-01-30 Mitsubishi Electric Corp 半導体基板の前処理方法
US4886765A (en) * 1988-10-26 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making silicides by heating in oxygen to remove contamination
JPH02140926A (ja) 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
JP2837423B2 (ja) 1989-04-07 1998-12-16 富士通株式会社 半導体基板の前処理方法
KR910007593A (ko) 1989-10-17 1991-05-30 제임스 조셉 드롱 강제 유체대류에 의한 오염 입자 제거장치 및 방법
JPH03183132A (ja) 1989-12-13 1991-08-09 Toshiba Ceramics Co Ltd 半導体装置の製造方法
JP2814021B2 (ja) * 1990-07-09 1998-10-22 三菱電機株式会社 半導体基板表面の処理方法
US5261965A (en) * 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
JPH0737892A (ja) 1993-07-23 1995-02-07 Toshiba Corp 半導体集積回路装置
JP3170134B2 (ja) 1994-02-18 2001-05-28 キヤノン株式会社 金属薄膜表面の汚れ除去方法
US5471033A (en) * 1994-04-15 1995-11-28 International Business Machines Corporation Process and apparatus for contamination-free processing of semiconductor parts
US5556479A (en) * 1994-07-15 1996-09-17 Verteq, Inc. Method and apparatus for drying semiconductor wafers
US5661408A (en) * 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US5704986A (en) * 1995-09-18 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor substrate dry cleaning method
KR0166831B1 (ko) * 1995-12-18 1999-02-01 문정환 반도체 웨이퍼 세정장치 및 방법
JPH10189487A (ja) 1996-12-20 1998-07-21 Sony Corp 薄膜堆積方法
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6325078B2 (en) * 1998-01-07 2001-12-04 Qc Solutions, Inc., Apparatus and method for rapid photo-thermal surface treatment
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
JP2000294529A (ja) 1999-04-09 2000-10-20 Seiko Epson Corp ウエハ面の異物除去装置
US6303397B1 (en) * 1999-04-13 2001-10-16 Agere Systems Guardian Corp. Method for benchmarking thin film measurement tools
US6261853B1 (en) 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6353264B1 (en) * 2000-07-18 2002-03-05 Trw Inc. Pseudomonolithic wafer scale module
US6528427B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Methods for reducing contamination of semiconductor substrates
US6783630B2 (en) * 2002-08-27 2004-08-31 Axcelis Technologies, Inc. Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106050A (ja) * 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd 半導体装置の測定方法およびプローブ装置
JPH07273157A (ja) * 1994-03-30 1995-10-20 Hitachi Ltd 半導体装置の検査装置及び半導体装置の検査方法
JP2000164648A (ja) * 1998-11-25 2000-06-16 Miyazaki Oki Electric Co Ltd 電気的特性測定用装置および電気的特性測定方法
JP2000162268A (ja) * 1998-11-27 2000-06-16 Advantest Corp 電子部品の温度印加方法および電子部品試験装置
JP2003028924A (ja) * 2001-07-13 2003-01-29 Advantest Corp 電子部品ハンドリング装置および電子部品の温度制御方法
JP2003098052A (ja) * 2001-09-21 2003-04-03 Hitachi Plant Eng & Constr Co Ltd 吸着試験片の収納容器

Also Published As

Publication number Publication date
US20050028836A1 (en) 2005-02-10
TW200507015A (en) 2005-02-16
EP1505636A3 (en) 2006-09-06
US7063992B2 (en) 2006-06-20
EP1505636A2 (en) 2005-02-09

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