TW200507015A - Semiconductor substrate surface preparation using high temperature convection heating - Google Patents

Semiconductor substrate surface preparation using high temperature convection heating

Info

Publication number
TW200507015A
TW200507015A TW093110758A TW93110758A TW200507015A TW 200507015 A TW200507015 A TW 200507015A TW 093110758 A TW093110758 A TW 093110758A TW 93110758 A TW93110758 A TW 93110758A TW 200507015 A TW200507015 A TW 200507015A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
high temperature
semiconductor substrate
substrate surface
surface preparation
Prior art date
Application number
TW093110758A
Other languages
English (en)
Chinese (zh)
Inventor
Michael J Adams
Jr James Healy
Jr William H Howland
Original Assignee
Solid State Measurements Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Publication of TW200507015A publication Critical patent/TW200507015A/zh

Links

Classifications

    • H10P72/0604—
    • H10P72/0434—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW093110758A 2003-08-08 2004-04-16 Semiconductor substrate surface preparation using high temperature convection heating TW200507015A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/637,447 US7063992B2 (en) 2003-08-08 2003-08-08 Semiconductor substrate surface preparation using high temperature convection heating

Publications (1)

Publication Number Publication Date
TW200507015A true TW200507015A (en) 2005-02-16

Family

ID=33552974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110758A TW200507015A (en) 2003-08-08 2004-04-16 Semiconductor substrate surface preparation using high temperature convection heating

Country Status (4)

Country Link
US (1) US7063992B2 (enExample)
EP (1) EP1505636A3 (enExample)
JP (1) JP2005101549A (enExample)
TW (1) TW200507015A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4270457B2 (ja) * 2004-03-10 2009-06-03 大日本スクリーン製造株式会社 有機物除去装置および膜厚測定装置
US8669497B2 (en) * 2007-03-30 2014-03-11 Tokyo Electron Limited Apparatus and method for predictive temperature correction during thermal processing
GB201321423D0 (en) * 2013-12-04 2014-01-15 Metryx Ltd Semiconductor wafer processing methods and apparatus

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20614A (en) * 1858-06-22 Preventing cabs from running omf the track
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
JPS63129633A (ja) 1986-11-20 1988-06-02 Fujitsu Ltd 半導体表面処理方法
JPH0228322A (ja) * 1988-04-28 1990-01-30 Mitsubishi Electric Corp 半導体基板の前処理方法
JPH02106050A (ja) * 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd 半導体装置の測定方法およびプローブ装置
US4886765A (en) * 1988-10-26 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making silicides by heating in oxygen to remove contamination
JPH02140926A (ja) 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
JP2837423B2 (ja) 1989-04-07 1998-12-16 富士通株式会社 半導体基板の前処理方法
KR910007593A (ko) 1989-10-17 1991-05-30 제임스 조셉 드롱 강제 유체대류에 의한 오염 입자 제거장치 및 방법
JPH03183132A (ja) 1989-12-13 1991-08-09 Toshiba Ceramics Co Ltd 半導体装置の製造方法
JP2814021B2 (ja) * 1990-07-09 1998-10-22 三菱電機株式会社 半導体基板表面の処理方法
US5261965A (en) * 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
JPH0737892A (ja) 1993-07-23 1995-02-07 Toshiba Corp 半導体集積回路装置
JP3170134B2 (ja) 1994-02-18 2001-05-28 キヤノン株式会社 金属薄膜表面の汚れ除去方法
JPH07273157A (ja) * 1994-03-30 1995-10-20 Hitachi Ltd 半導体装置の検査装置及び半導体装置の検査方法
US5471033A (en) * 1994-04-15 1995-11-28 International Business Machines Corporation Process and apparatus for contamination-free processing of semiconductor parts
US5556479A (en) * 1994-07-15 1996-09-17 Verteq, Inc. Method and apparatus for drying semiconductor wafers
US5661408A (en) * 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US5704986A (en) * 1995-09-18 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor substrate dry cleaning method
KR0166831B1 (ko) * 1995-12-18 1999-02-01 문정환 반도체 웨이퍼 세정장치 및 방법
JPH10189487A (ja) 1996-12-20 1998-07-21 Sony Corp 薄膜堆積方法
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6325078B2 (en) * 1998-01-07 2001-12-04 Qc Solutions, Inc., Apparatus and method for rapid photo-thermal surface treatment
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
JP3979737B2 (ja) * 1998-11-25 2007-09-19 宮崎沖電気株式会社 電気的特性測定用装置および電気的特性測定方法
JP4082807B2 (ja) * 1998-11-27 2008-04-30 株式会社アドバンテスト 電子部品の温度印加方法および電子部品試験装置
US6254689B1 (en) * 1999-03-09 2001-07-03 Lucent Technologies Inc. System and method for flash photolysis cleaning of a semiconductor processing chamber
JP2000294529A (ja) 1999-04-09 2000-10-20 Seiko Epson Corp ウエハ面の異物除去装置
US6303397B1 (en) * 1999-04-13 2001-10-16 Agere Systems Guardian Corp. Method for benchmarking thin film measurement tools
US6261853B1 (en) 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6353264B1 (en) * 2000-07-18 2002-03-05 Trw Inc. Pseudomonolithic wafer scale module
US6528427B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Methods for reducing contamination of semiconductor substrates
JP2003028924A (ja) * 2001-07-13 2003-01-29 Advantest Corp 電子部品ハンドリング装置および電子部品の温度制御方法
JP2003098052A (ja) * 2001-09-21 2003-04-03 Hitachi Plant Eng & Constr Co Ltd 吸着試験片の収納容器
US6783630B2 (en) * 2002-08-27 2004-08-31 Axcelis Technologies, Inc. Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling

Also Published As

Publication number Publication date
US20050028836A1 (en) 2005-02-10
JP2005101549A (ja) 2005-04-14
EP1505636A3 (en) 2006-09-06
US7063992B2 (en) 2006-06-20
EP1505636A2 (en) 2005-02-09

Similar Documents

Publication Publication Date Title
WO2001059831A3 (en) Method and apparatus for preparing semiconductor wafers for measurement
CN103426724B (zh) 用于调整晶圆翘曲的方法和装置
WO2003081646A3 (en) System and method for heating and cooling wafer at accelerated rates
ATE388482T1 (de) Örtliche erwärmung und kühlung von substraten
WO2006130573A3 (en) Optimizing the thermal budget during a pulsed heating process
WO2009075124A1 (ja) 半導体装置の製造方法および半導体装置
US8573836B2 (en) Apparatus and method for evaluating a substrate mounting device
WO2009099284A3 (en) Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit
PL371238A1 (pl) Sposób i urządzenie do kondycjonowania płytek półprzewodnikowych i/lub elementów hybrydowych
WO2003060447A8 (en) Temperature measurement and heat-treating methods and systems
DE502007003501D1 (de) Nden halbleiterwafers und halbleiterbauelement
TW200616139A (en) Method and apparatus for controlling temperature of a substrate
HUP0203145A2 (en) Method and device for producing a soldered joint
AU2001253890A1 (en) Methods and apparatus for thermally processing wafers
WO2002053800A3 (en) Windows used in thermal processing chambers
CN102918621A (zh) 主动露点感测和载荷锁定排气以避免在工件上凝结
CN110854010B (zh) 冷却晶圆的方法、装置和半导体处理设备
TW200746350A (en) Wafer holder, method for producing the same and semiconductor production apparatus
TW200514130A (en) Substrate processing apparatus and method for producing the semiconductor device
CN111900104A (zh) 一种用于半导体晶圆快速退火处理的加热装置
TW200507015A (en) Semiconductor substrate surface preparation using high temperature convection heating
MY157893A (en) Method and apparatus for thermally processing plastic discs, in particular mould wafers
TW200746356A (en) Semiconductor integrated circuit device and method for manufacture thereof
JP2007281119A5 (enExample)
TWI255874B (en) Method for forming an epitaxial silicon wafer with a denuded zone