JP2005101542A - 半導体発光素子、半導体発光素子の製造方法 - Google Patents
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Abstract
【解決手段】n型クラッド層と、n型クラッド層上に位置する光ガイド層と、光ガイド層上に位置する多重量子井戸構造活性層と、活性層上に位置し、不純物濃度が5×1018cm−3以上かつ3×1019cm−3以下であるp型オーバーフロー防止層と、p型オーバーフロー防止層上に位置し、不純物濃度が1×1018cm−3以上でありかつp型オーバーフロー防止層のそれより低いp型光ガイド層と、p型光ガイド層上に位置し、バンドギャップがp型オーバーフロー防止層より狭いp型クラッド層とを具備する。
【選択図】図1
Description
Claims (5)
- n型クラッド層と、
前記n型クラッド層上に位置する光ガイド層と、
前記光ガイド層上に位置する多重量子井戸構造活性層と、
前記活性層上に位置し、不純物濃度が5×1018cm−3以上かつ3×1019cm−3以下であるp型オーバーフロー防止層と、
前記p型オーバーフロー防止層上に位置し、不純物濃度が1×1018cm−3以上でありかつ前記p型オーバーフロー防止層のそれより低いp型光ガイド層と、
前記p型光ガイド層上に位置し、バンドギャップが前記p型オーバーフロー防止層より狭いp型クラッド層と
を具備することを特徴とする半導体発光素子。 - 前記光ガイド層と前記活性層の間に位置するn型オーバーフロー防止層をさらに具備し、前記光ガイド層がn型であり、前記n型オーバーフロー防止層のバンドギャップが前記n型クラッド層より広いことを特徴とする請求項1記載の半導体発光素子。
- 前記光ガイド層がn型でありかつ前記活性層に近づくにつれ不純物濃度が高くなる層構造であることを特徴とする請求項1記載の半導体発光素子。
- 前記n型クラッド層および前記p型クラッド層がAlvGa1−vN(0.0<v≦0.3)、またはAlvGa1−vN/GaNの超格子(0.0<v≦0.3)、前記光ガイド層および前記p型光ガイド層がInwGa1−wN(0.0≦w≦1.0)、前記活性層がInxGa1−xN/InyGa1−yN(0.05≦x≦1.0、0.0≦y≦1.0、x>y)、前記p型オーバーフロー防止層がAlzGa1−zN(z>v)、のそれぞれ組成であることを特徴とする請求項1記載の半導体発光素子。
- n型基板上にn型クラッド層を形成する工程と、
前記形成されたn型クラッド層上に光ガイド層を形成する工程と、
前記形成された光ガイド層上に多重量子井戸構造活性層を形成する工程と、
前記形成された活性層上にp型オーバーフロー防止層を形成する工程と、
前記形成されたp型オーバーフロー防止層上に、不純物をドープしつつ前記p型オーバーフロー防止層より不純物濃度が低くなるようにp型光ガイド層を成長させる工程と、
前記成長させたp型光ガイド層上にp型クラッド層を形成する工程と
を具備することを特徴とする半導体発光素子の製造方法。
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JP2004227579A JP4011569B2 (ja) | 2003-08-20 | 2004-08-04 | 半導体発光素子 |
US10/917,521 US7554127B2 (en) | 2003-08-20 | 2004-08-13 | Semiconductor light-emitting element and method of manufacturing the same |
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Cited By (3)
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JP2007096171A (ja) * | 2005-09-30 | 2007-04-12 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子 |
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US7554127B2 (en) | 2009-06-30 |
JP4011569B2 (ja) | 2007-11-21 |
US20050040384A1 (en) | 2005-02-24 |
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