JP2005095971A - Method and device for correcting defect in pattern substrate, and method for manufacturing pattern substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and device for stably correcting defects in a pattern substrate, and also to provide a method for manufacturing a pattern substrate. <P>SOLUTION: This is a defect correcting device that corrects defects in the patterned substrate. The device is equipped with a stage 7 on which the substrate 6 is placed, a short pulse laser beam source 1, a beam shaping mechanism 2 which shapes a short pulse laser beam from the short pulse laser light source 1, and an air jetting means 13 for bringing a film 5 close to the substrate 6. The device removes the film 5 and the defects at the same time by irradiating the film 5 with the laser beam. Further, it transfers a pattern to the substrate by moving a film reel 8 and bringing the film 5 with a colored layer 51 close to the substrate 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a defect correction method, a defect correction apparatus, and a pattern substrate manufacturing method for correcting a defect of a pattern substrate.

  In the manufacturing process of color filters for liquid crystal displays, defects in the color filter substrate are corrected in order to improve the yield. As this defect correction method, there is a method of correcting by attaching a resist to the tip of the needle and hanging it on the defective portion. However, in this method, since the dropping amount changes depending on the viscosity of the resist, it is difficult to control the dropping amount and the correction accuracy, and it is difficult to correct stably. In addition, a drying process is required, a correction time is required for a long time, and productivity is low.

  Another defect correction method is a film transfer method. In this method, a film having a colored layer is brought into close contact with a white defect portion having no colored layer on the color filter substrate, and the colored layer is transferred from the film to correct the defect (for example, Patent Document 1).

  Problems of this method will be described with reference to FIG. FIG. 14 is an enlarged cross-sectional view showing the configuration of the color filter substrate. FIG. 14 shows a partial configuration of the color filter substrate. The substrate 6 for color filter is usually provided with a black matrix 71 (hereinafter referred to as BM) in a matrix. A red, green and blue colored layer 70 is provided between the BMs. Since a part of the colored layer 70 overlaps with the BM 71, a structure having irregularities is formed. For example, in a color filter having a resin black matrix structure, each of the BM and the colored layer is about 1 μm, and thus the surface unevenness is about 1 μm. Therefore, the film may partially adhere to the convex portion of the colored layer 70, and the film may not be adhered accurately to the defective portion in the concave portion. In some cases, the film cannot be completely adhered to the white defect portion of the colored layer, and it is difficult to correct the defect by thermally transferring the colored layer stably. Moreover, in the conventional transfer method, in order to transfer a film to a board | substrate, it is set as the multilayer structure which has a material different from the colored layer by the side of a board | substrate. Therefore, pixels are formed of a material different from the colored layer on the substrate side, which may affect the quality of the display device.

Japanese Patent Application Laid-Open No. 11-232081

  As described above, the conventional defect correction method has a problem that defects on the pattern substrate cannot be corrected stably.

  A defect correction apparatus according to the present invention is a defect correction apparatus for removing defects on a patterned substrate, and includes a pulse laser light source (for example, a short pulse laser light source 1 in the embodiment of the present invention) that emits a pulse laser. A part of the film by irradiating the film with pulsed laser light from the pulsed laser light source. Defects are removed almost simultaneously by laser ablation. Thereby, defects on the pattern substrate can be removed with a simple configuration.

  In the above-described defect inspection apparatus, the film may be thinned by irradiating with pulsed laser light, and a part of the film and the defect may be removed almost simultaneously by laser ablation.

  Film changing means for changing the film into a film having a transfer layer (for example, the colored layer 51 in the embodiment of the present invention) transferred to the substrate in the defect correcting apparatus described above (for example, a film reel in the embodiment of the present invention) A rotation means 14 and the like, and the film having the transfer layer is irradiated with the pulsed laser light to transfer the transfer layer to the substrate. Thereby, a white defect and a black defect can be stably corrected with a simple configuration.

  You may make it transfer the said transfer layer to the location from which the said defect was removed in the above-mentioned defect correction apparatus. Thereby, defect correction can be performed promptly.

  The defect correction apparatus according to the present invention is the above-described defect correction apparatus, further comprising a nozzle that attaches a correction liquid to the substrate in accordance with a pattern to be corrected on the substrate, and the correction liquid is applied to the substrate from the removed portion of the film. The defect is fixed by adhering. Thereby, the pattern can be corrected accurately.

  The defect inspection apparatus according to the present invention is the above-described defect inspection apparatus, further comprising a film having a transfer layer movable to a position where the film is removed, and the transfer layer is formed from a portion where the film is removed. The defect is corrected by transferring it to the substrate.

  A defect correction apparatus according to the present invention is a defect correction apparatus for correcting a defect by transferring a pattern to a defective portion of a patterned substrate, and has a transfer layer transferred to the substrate on a surface facing the substrate. A film adjacent to the substrate, a pulsed laser light source that emits a pulsed laser light applied to the film corresponding to the defective portion, and a pulsed laser from the pulsed laser light source on the film having the transfer layer The transfer layer is transferred to the defective portion of the substrate by irradiation with light. Thereby, a pattern can be accurately formed in a defective part, and stable correction can be performed.

  A preferred embodiment of the above-described defect correction apparatus is a photomask substrate in which the substrate includes a light shielding film and a resist pattern formed on the light shielding film, and corrects defects in the resist pattern. . Thereby, the pattern of the photomask substrate can be corrected.

  A defect correction apparatus according to the present invention is a defect correction apparatus for correcting a defect of a patterned substrate, a film provided opposite to the substrate, the film irradiated with the film, and an opening portion provided in the film The film is removed by a pulse laser light source that emits pulsed laser light and a nozzle that is movable to the position of the opening, and that attaches a correction liquid to the substrate in accordance with a pattern to be corrected on the substrate. The correction liquid is attached to the substrate from the formed portion to correct the defect. Thereby, it is possible to attach the pattern with high accuracy and correct the defect accurately.

  A defect correction apparatus according to the present invention is a defect correction apparatus for correcting a defect of a patterned substrate, a film provided opposite to the substrate, the film irradiated with the film, and an opening portion provided in the film A pulse laser light source for emitting a pulse laser; and a film having a transfer layer movable to a position corresponding to the opening (for example, the film 18 in the embodiment of the present invention), and the transfer through the opening. The layer is transferred to the substrate to correct the defect. Thereby, it is possible to correct the defect accurately with a simple configuration.

  A preferred example of the above-described defect correcting apparatus further includes a heater block (for example, the heater block 20 in the embodiment of the present invention) movable to a position corresponding to the opening, and the film having the transfer layer by the heater block. Is pressed against the substrate to transfer the transfer layer. Thereby, it is possible to transfer the transfer layer with good adhesion with a simple configuration.

  In the above defect correction apparatus, the heater block may further include a convex portion corresponding to the opening, and the film having the transfer layer and the substrate may be pressed by the convex portion. Thereby, adhesiveness can be improved.

  The defect correcting apparatus described above may further include a fixing unit that fixes the film provided with the opening. Accordingly, the displacement of the opening can be prevented.

  In the above defect correction apparatus, the film having the transfer layer further includes an absorption layer that absorbs the pulse laser beam (for example, the expansion layer 23 in the embodiment of the present invention), and the absorption layer is irradiated with the pulse laser beam. It is desirable to transfer the transfer layer to the substrate. Thereby, the transfer layer can be efficiently transferred.

  In the above-described defect correction apparatus, it is preferable that a separation layer for separating the absorption layer from the transfer layer is provided between the absorption layer and the transfer layer after the transfer layer is transferred to the substrate. Thereby, it can prevent that an absorption layer remains adhering to a board | substrate, and can correct a defect correctly.

  The defect correction apparatus according to the present invention is characterized in that, in the above-described defect correction apparatus, the correction liquid in the peripheral portion of the portion where the film is removed is removed by irradiating the pulse laser beam. As a result, the pattern can be accurately corrected.

  In the above-described defect correcting apparatus, it is preferable that the defect correcting apparatus further includes a jetting unit that jets gas to the film or the film having the transfer layer, and the jetting unit brings the film or the film having the transfer layer close to the substrate. Thereby, a board | substrate and a film can be adjoined accurately.

  The above-described defect correction apparatus further includes a beam shaping mechanism (for example, the beam shaping mechanism 2 in the embodiment of the present invention) for shaping pulse laser light from the pulse laser light source, and the pulse laser shaped by the beam shaping mechanism. It is desirable to irradiate the film or the film having the transfer layer with light. Thereby, the defect can be corrected with high accuracy.

  In the defect correction apparatus described above, an observation light source for irradiating the substrate with light on substantially the same axis as the pulse laser light from the pulse laser light source, and detection for detecting light from the observation light source irradiated on the substrate It is desirable to further comprise means. As a result, it is possible to accurately irradiate the defect detection location with light.

  The film having the transfer layer further has a transparent layer (for example, the transparent layer 55 in the embodiment of the present invention) that transmits the light of the observation light source, and the position irradiated with the light is transferred from the transparent layer to the transfer layer. It is also possible to further include a film reel (for example, the film reel 8 in the embodiment of the present invention) for feeding out the film having the transfer layer so as to be changed into a layer. Thereby, it is possible to prevent misalignment at the time of defect detection and defect correction with a simple configuration.

  In the above-described defect correction apparatus, it is possible to further include a wavelength tunable filter that selects a wavelength of light from the observation light source, and to heat the transfer layer with light emitted from the wavelength tunable filter. Thereby, the adhesiveness of a board | substrate and a transfer layer can be improved.

  A defect correction method according to the present invention is a defect correction method for correcting a defect by removing a defect on a patterned substrate, the step of detecting a defect on the substrate, and being provided facing the substrate. A step of irradiating the film with pulsed laser light to remove the film, a part thereof, and the defect laser ablation substantially simultaneously.

  In the above defect correction method, the method further comprises the step of thinning the film by irradiating the pulse laser beam, and irradiating the thinned portion of the film with pulse laser light to remove a part of the film and the defect. It is also possible to remove almost simultaneously by laser ablation.

  Changing the film into a film having a transfer layer transferred to the substrate in the defect correcting method, and irradiating the film having the transfer layer with a pulse laser beam to transfer the transfer layer to the substrate. It is desirable to have more. Thereby, an arbitrary pattern can be corrected.

  The defect correcting method according to the present invention includes a step of adhering a correction liquid corresponding to a pattern to be corrected in the defect correcting method to the substrate from a portion where the film is removed, and a step of removing the film from the substrate. Is further included. Thereby, an arbitrary pattern can be corrected.

  A defect correction method according to the present invention is a defect correction method for correcting a defect by transferring a pattern to a defective portion of a patterned substrate, the step of detecting a defect on the substrate, and a surface facing the substrate And a step of bringing a film having a transfer layer transferred onto the substrate into proximity, and a step of irradiating the film with pulsed laser light to transfer the transfer layer to a defective portion of the substrate. Thereby, a defect can be corrected stably.

  A defect correction method according to the present invention is a defect correction method for correcting a defect of a patterned substrate, the step of detecting a defect on the substrate, a step of bringing a film close to the substrate, and a pulse on the film. Irradiating a laser beam to provide an opening; attaching a correction liquid according to a pattern to be corrected to a defective portion of the substrate through the opening; and removing the film from the substrate. It is to be prepared. Thereby, a pattern can be made to adhere to a defective part correctly.

  A defect correction method according to the present invention is a defect correction method for correcting a defect of a patterned substrate, the step of detecting a defect on the substrate, a step of facing a film to the substrate, and a pulse to the film Irradiating a laser beam to provide an opening; providing a film having a transfer layer at the position of the opening; and transferring the transfer layer to the substrate through the opening. . As a result, the transfer layer can be prevented from being transferred to a portion other than the opening, and the defect can be accurately corrected with a simple configuration.

  In the above-described defect correction method, the method further comprises the step of providing an air removal unit for removing the air between the substrate and the film having the transfer layer by removing the film around the opening. It is desirable to provide a film having the transfer layer at the position of the opening and the air removal unit. Thereby, the adhesiveness of the transfer layer can be improved.

  A preferred embodiment of the above-described defect correcting method is characterized in that gas is jetted onto the film or the film having the transfer layer and is brought close to the substrate. Thereby, an accurate pattern can be formed.

  The patterned substrate manufacturing method according to the present invention includes a step of forming a pattern on a substrate, a step of detecting a defect on the substrate on which the pattern is formed, and irradiating a film adjacent to the substrate with a pulsed laser beam. Removing a part of the film and the defects substantially simultaneously by laser ablation. Thereby, a pattern board without a defect can be manufactured.

  In the above-described pattern substrate manufacturing method, the step of changing the film to a film having a transfer layer transferred to the substrate, and transferring the transfer layer to the substrate by irradiating the film having the transfer layer with pulsed laser light You may make it have a step to do. Thereby, the pattern board | substrate which has a pattern correctly can be manufactured.

  The pattern substrate manufacturing method according to the present invention includes a step of attaching a correction liquid corresponding to a pattern to be corrected in the above-described pattern substrate manufacturing method to the substrate from a portion where the film has been removed, and removing the film from the substrate. And further comprising steps. Thereby, an arbitrary pattern can be formed on the defective portion.

  A pattern substrate manufacturing method according to the present invention is a pattern substrate manufacturing method for forming a pattern by transferring a pattern to a defective portion of a patterned substrate, and detecting a defect on the pattern-formed substrate; A step of bringing a film having a transfer layer transferred to the substrate close to a surface facing the substrate, and a step of irradiating the film with a pulse laser beam to transfer the transfer layer to a defective portion of the substrate; Is provided. This makes it possible to transfer the pattern stably.

  A pattern substrate manufacturing method according to the present invention is a pattern substrate manufacturing method for manufacturing a patterned substrate, the step of forming a pattern on the substrate, the step of detecting defects on the substrate, and a film on the substrate. Irradiating the film with pulsed laser light to provide an opening; providing a film having a transfer layer at the position of the opening; and passing the transfer layer through the opening. Transferring to a substrate and removing the film from the substrate.

  A pattern substrate manufacturing method according to the present invention is a pattern substrate manufacturing method for correcting a defect of a patterned substrate, the step of forming a pattern on the substrate, the step of detecting a defect on the substrate, A step of bringing the film close; a step of irradiating the film with pulsed laser light to provide an opening; and a step of attaching a correction liquid according to a pattern to be corrected to a defective portion of the substrate through the opening; Removing the film from the substrate. Thereby, an accurate pattern can be formed on the substrate.

  In the above-described pattern substrate manufacturing method, the method further includes the step of removing the film around the opening and providing an air removal unit for removing air between the substrate and the film having the transfer layer, It is desirable to provide a film having the transfer layer at the position of the opening and the air removal unit. Thereby, the adhesiveness of the transfer layer can be improved.

  A preferred embodiment of the above-described pattern manufacturing method is characterized in that a gas is jetted onto the film or the film having the transfer layer and is brought close to the substrate.

  The present invention can provide a defect correction method, a defect correction apparatus, and a pattern substrate manufacturing method capable of stably correcting defects with a simple configuration.

Embodiments of the present invention will be described below with reference to the drawings. The following description shows preferred examples of the present invention, and the scope of the present invention is not limited to the following examples. In the following description, the same reference numerals denote the same contents.
Example 1.

  A pattern substrate defect correcting apparatus according to the present embodiment will be described with reference to FIG. FIG. 1 is a diagram showing the configuration of the defect correction apparatus. 1 is a short pulse laser light source, 2 is a beam shaping mechanism, 3 is a half mirror, 4 is an objective lens, 5 is a film, 6 is a substrate, 7 is a stage, 8 is a film reel, 9 is a lamp light source, 10 is a filter, 11 Is a half mirror, 12 is a CCD camera, 13 is an air jetting means, and 14 is a film reel rotating means.

  In this embodiment, the substrate 6 whose defect is to be corrected is a color filter substrate used for a liquid crystal panel of a liquid crystal display device. This color filter substrate 6 is usually provided with a colored layer and a black matrix on a transparent glass substrate. The substrate 6 is placed horizontally on the stage 7 to determine whether each pixel of the color filter substrate has a defect. Irradiate the laser tail to correct the defective pixel. The stage 7 is an XY stage including an XY drive mechanism (not shown), and can move the substrate 6 to an arbitrary position. The defect correction apparatus of the present embodiment includes a defect detection mechanism for detecting a defect on the substrate 6 and a defect correction mechanism for correcting the detected defect. Specifically, after the defect detection mechanism grasps the position of the defect, the defect detection mechanism corrects the defect by irradiating the defective portion of the substrate 6 with a laser. The configuration of the optical system and the like of the defect detection mechanism and the defect correction mechanism shown in the figure is an example, and other optical parts such as a filter, a lens, and a mirror may be provided.

  First, the defect detection mechanism will be described. Detection is performed using a lamp light source 9 as an observation light source. The lamp light source 9 emits white light for illuminating the surface of the substrate 6. The observation light emitted from the lamp light source 9 passes through the filter 10 and enters the half mirror 11. The filter 10 is a wavelength tunable filter and can shield only a predetermined wavelength. Here, the filter 10 may correct the wavelength in accordance with the transmittance of the film 5 so that the detected light becomes white light. The light incident on the half mirror 11 is reflected in the direction of the substrate 6. This light is reflected by the half mirror 3 and enters the objective lens 4. A film 5 made of polyimide having a thickness of about 10 μm is provided between the objective lens 4 and the substrate 6 so as to face the substrate 6. Then, the light condensed by the objective lens 4 passes through the film 5 and enters the surface of the substrate 6 to illuminate a part of the substrate. The light reflected by the substrate 6 passes through the film 5, the objective lens 4, the half mirror 3 and the half mirror 11 and enters the CCD camera 12. The CCD camera 12 detects an image based on the reflected light on the surface of the substrate 6. The CCD camera 12 is connected to an information processing device such as a personal computer (PC), and determines the presence or absence of a defect in the substrate 6 based on the detected image. For example, a die-to-die method for comparing with a detected reference die can be used. If the detected image is different from the reference die, it is determined as a defective portion. With this defect detection mechanism, an opaque black defect and a transparent white defect can be distinguished and detected. Further, the PC is connected to the XY drive mechanism of the stage 7, the detection location is specified from the position of the stage 7 at the time of defect detection, and the coordinates of the defective pixel on the substrate are detected. Of course, the defect detection mechanism is not limited to the illustrated configuration, and a defect detection mechanism having a configuration other than this may be used. About this defect detection mechanism, the structure similar to the conventional defect detection apparatus can be used. By moving the stage 7, the relative position of the light from the substrate 6 and the lamp light source 9 is changed to detect defects on the entire surface of the substrate 6.

  The defect detected by the above-described defect detection mechanism is corrected by the defect correction mechanism. The defect correction mechanism will be described below. The short pulse laser light source 1 is a Q-switched YAG laser and can emit short pulse light of 10 nsec or less. The short pulse laser beam emitted from the short pulse laser light source 1 enters the beam shaping mechanism 2. The beam shaping mechanism 2 includes an aperture, a slit, a lens, or the like, and can form a short pulse light spot into a beam spot having an appropriate shape. For example, the beam spot of the short pulse light on the substrate is formed into a rectangular shape substantially the same as the pixel of the color filter. Or you may make it shape | mold in the shape substantially the same as the shape of a defect. The half mirror 3 reflects short pulse light in the direction of the substrate 6. Here, the respective optical components are arranged so that the light from the short pulse laser light source 1 and the lamp light source 9 are coaxial. The short pulse light reflected by the half mirror 3 is applied to the film 5.

  The film 5 is wound around two film reels 8 connected to the film reel rotating means 14. The film reel rotating means 14 includes a motor or the like, and can rotate each of the film reels 8. By rotating the two film reels 8, the film 5 is continuously fed in the Y direction. Before the defect is corrected, the film reel rotating means 14 is driven so that the film 5 is bent, and one of the film reels 8 is rotated. Here, the film 8 is allowed to bend so as not to come into contact with the substrate 6. The air ejecting means 13 includes an air tank, piping, an ionizer, a filter, and the like, and can eject ionized air from above the film 5. For example, a cylinder having an open bottom on the substrate side is provided under the objective lens 4. This cylinder is tapered and the substrate side is narrowed. A pipe is connected to the side surface so that air can flow into the cylinder. And by flowing air, the internal pressure in a cylinder becomes high and air spouts to the film side. At the time of defect correction, air is blown to bring the film 5 closer to the substrate side, and the film 5 and the substrate 6 are brought close to each other. By bringing the film 5 and the substrate 6 close to each other, a minute gap is provided between the substrate 6 and the film 5 in the defective portion. In this case, the protruding portion other than the defective portion of the substrate 6 and the film 5 may be in contact with each other. The distance between the film 5 and the substrate 6 is adjusted by the ejection amount of the air ejection means 13 or the like. Alternatively, the deflection and tension of the film 5 may be adjusted by the film reel rotating means 14. Further, the interval may be adjusted by providing a mechanism for moving the stage 7 in the Z direction. By bringing the film 5 and the substrate 6 closer to each other by the air ejection means 13, it is not necessary to make the film 5 adhere to the substrate. Thereby, stable correction can be performed and the influence on the pattern of the substrate 6 can be reduced.

  The film 5 can be changed to a different film depending on the type of defect to be corrected as shown in FIG. The film of the defect correcting apparatus is composed of a black defect correcting film 5a and a film reel 8a, and a white defect correcting film 5b and a film reel 8b. Different films 5a and 5b are used depending on the defect to be corrected. The film reel 8 is attached to a reel moving means (not shown) such as a linear guide and is slidable in the X direction. The film reel 8a and the film reel 8b are moved in the X direction, and the film 5 corresponding to the defect to be corrected is irradiated with the short pulse light. That is, when correcting the black defect, the film 5 a is moved to the position of the laser spot 15 of the short pulse light from the short pulse laser light source 1. On the other hand, when correcting the white defect, the film 5 b is moved to the position of the laser spot 15 of the short pulse light from the short pulse laser light source 1. Since the light from the short pulse laser light source 1 and the lamp light source 9 is adjusted so as to be on the same optical axis, the laser spot 15 on the film 5 and the observation light are substantially in the same position. When the film reel 8 is moved and when the film 5 is sent out, the film reel 8 is rotated to give an appropriate tension to the film 5 so that a gap is provided between the substrate 6 and the film 5. Then, the film is moved and sent out without blowing air. On the other hand, when correcting the defect, the film 5 is deflected and air is ejected by the air ejecting means 14 to bring the film 5 close to the substrate surface.

  The structure of this film 5a and the board | substrate 6 is demonstrated using FIG. FIG. 3 is an enlarged cross-sectional view showing the configuration of the corrected portion. FIG. 3A shows the configuration of the film and the substrate that are being irradiated with the short pulse light. FIG. 3B shows a modified substrate configuration. 61 is a red (R) colored layer, 62 is a green (G) colored layer, 63 is a blue (B) colored layer, and 64 is a black matrix (BM). These are provided on the substrate 6. First, a general method for manufacturing a color filter substrate will be described. On the color filter substrate 6, a chromium film serving as a light-shielding film is formed on a transparent glass substrate or the like by sputtering deposition or the like, and is patterned by exposure and development processes. Thereby, the chromium film becomes BM64 formed in a matrix. From this, a photosensitive resin in which a pigment corresponding to the color of the colored layer is dispersed is applied and patterned by exposure and development processes. By repeating this process, the R colored layer 61, the G colored layer 62, and the B colored layer 63 are provided in order between the BM 64. A protective film and a pixel electrode are formed from above. Here, it is assumed that the foreign matter 65 is attached to the R colored layer 61 as shown in FIG. A pixel to which such a foreign matter 65 is attached is detected as a black defect that does not transmit light by the defect detection mechanism. This film 5 a is in substantially contact with the substrate 6.

The pixel to which the foreign matter 65 is attached is irradiated with short pulse light of 10 nsec or less from the short pulse laser light source 1. The short pulse light condensed by the objective lens 4 is incident on the film 5a adjacent to the substrate 6 by the air jetting means. The power of this short pulse light is adjusted so as to partially open the film 5a by laser ablation. In this embodiment, since a polyimide film is used, if 355 nm of the third harmonic of the YAG short pulse laser light source 1 or 266 nm of the fourth harmonic is used, the short pulse light is absorbed, so that the film 5a can be easily absorbed. An opening can be provided. Further, since the polyimide film is substantially transparent without absorption in the visible light region, observation is easy, and the defect can be detected using the lamp light source 9. The film 5a is not limited to polyimide, but may be made of a material that is opened by chemical irradiation, thermal decomposition, sublimation, ablation, or the like when irradiated with light. Since the laser beam is shaped by the beam shaping mechanism 2 so as to have a defect shape or a pixel shape, the shape of the opening of the film 5a should be approximately the same as the defect shape or the R pixel shape. it can. The foreign matter 65 and a part of the film can be removed almost simultaneously by laser ablation. The removed foreign matter 65a is detached from the substrate through the opening of the film 5a as shown in FIG. Further, since the periphery of the correction portion is covered with a film, the foreign matter 65 does not adhere to the periphery of the correction portion and create a new defect. Thus, the film and defects can be removed almost simultaneously by laser ablation. Although the removed foreign matter 65a is a single piece, it may become a large number of debris and land on the film. The power of the short pulse laser light source 1 may be adjusted so as to gradually open a hole in the film 5a, or may be adjusted so that the film is punched and foreign matter is removed simultaneously. When the hole is gradually opened in the film 5a, the film 5a is made thin as shown in FIG. 3C, and the portion where the film 5a is further thinned is irradiated with a short pulse laser beam to remove foreign matter. To be removed. When the size of the opening is small, the opening may be provided while the film is being sent out. Since the film 5a is chemically decomposed by using far ultraviolet rays, if film residues remain on the substrate surface after removing foreign matter, the film residues can be removed by irradiating far ultraviolet rays.
When the foreign matter 65 is transparent, laser ablation does not occur even if the foreign matter is irradiated with short pulse light because no light is absorbed. On the other hand, when a film that absorbs light, such as polyimide, is used as the film 5 and a short pulse laser beam is irradiated with the absorbing film substantially in contact with the top of the foreign material, the film opens simultaneously with laser ablation. A foreign substance is momentarily pressed against the substrate by the gas or debris that has come forward, and can be detached from the substrate by a subsequent recoil.

  Since the colored layer 61 is removed together with the foreign matter 65 on the substrate by the above processing, the black defect becomes a white defect 66 that transmits light. In order to correct the white defect 66, the film reel 8a and the film reel 8b are moved in the X direction as shown in FIG. 4, and the film 5b is moved to the position of the laser spot 15. And the short defect light is irradiated to the film 5b, and the white defect 66 is corrected. This white defect correction method will be described with reference to FIG. FIG. 5 is an enlarged cross-sectional view showing a configuration between the film 5 b and the substrate 6. A colored layer 51 is coated on the substrate-side surface of the film 5b. As the film 5b, a dry film resist in which a polyethylene film having a thickness of about 10 to 20 μm is used as a base film and a resist having a thickness of about 1 μm is used as the colored layer 51 can be used. The film 5b is desirably made of a material that does not absorb short pulse light, and is not limited to polyethylene, but may be polypropylene or PET film, and the thickness is not limited to the above thickness. The colored layer 51 can be made of substantially the same material as the R colored layer on the substrate side. Thereby, deterioration of the quality of a liquid crystal display device can be prevented. Of course, the material and thickness of the film 5b and the colored layer 51 are not limited to those described above.

  The film 5 b is brought close to the substrate 6 by ejecting the air ionized by the air ejecting means 13. Thereby, the film 5b comes into contact with a protruding portion such as provided on the substrate 6 and a minute gap is opened between the colored layer portion (defect portion) of the substrate. And the short pulse light shape | molded by the beam shaping mechanism in the substantially the same shape as the defective part is irradiated to the film 5b. The output of the short pulse light is adjusted so that the colored layer 51 is peeled off from the film 5b by laser ablation. The colored layer 51 peeled from the film 5b flies in the space between the film 5b and the substrate 6 and lands on the defective portion. Thereby, the red colored layer 51a can be adhered to the defective portion and transferred. If a sufficient amount of the colored layer 51a cannot be transferred by one transfer, the film reel 8 may be rotated to irradiate the short pulse light while feeding the film 5b in the Y direction. Moreover, the board | substrate 6 and the film 5b can be made to adjoin by irradiating the film 5b with a short pulse light from the surface on the opposite side to the surface in which the colored layer 51 is provided. Since the gap between the film 5 and the substrate 6 is a minute distance, the number of collisions between the molecules in the atmosphere and the colored layer 51a is small. Thereby, the process of defect correction can be performed by laser ablation vapor deposition in the atmosphere. Further, since the air ejection means 13 is closer, fine adjustment of the interval is possible. Therefore, the defect can be corrected stably without being influenced by the surface state of the substrate.

  Furthermore, in the present embodiment, the colored layer 51 of the film 5 can be heated by adjusting the power and wavelength of the lamp light source 9 in advance. For example, the infrared light is selected from the light from the lamp light source 9 using a wavelength variable filter. By irradiating the substrate 6 with the infrared rays, only the defective colored layer 51 can be spot-heated. Thereby, the adhesiveness with respect to the board | substrate when landing on the board | substrate 6 can be aimed. Moreover, the light of the lamp light source 9 can be heated to the substrate 6 by changing the wavelength of the film 5b and the colored layer 51 to light having a low absorption rate and a high absorption rate of the substrate. Thereby, the adhesiveness with respect to the board | substrate at the time of landing on the board | substrate 6 can be improved. As described above, the defect correction apparatus according to the present invention can perform heating by adjusting the output and wavelength of the lamp light source 9 for taking in the CCD camera.

  Further, since it is possible to correct a defect at one place only by moving the film reel 8 without moving the optical system or the stage, all of the above operations can be performed while observing under one objective lens. Furthermore, the foreign matter can be removed and colored with only one short pulse laser light source 1, and white defects and black defects can be corrected. Further, it may be detected by the CCD camera 12 whether or not the correction is accurately performed after the correction operation is completed. 2 and 4 show only two films 5a and 5b, but in addition to R, a colored layer for G and B and a light-shielding layer for correcting defects in BM are provided. A film 5 and a film reel 8 may be further provided. The defects in the G and B colored layers and the BM locations can be corrected in the same manner as in the R colored layer 61. For the G and B colored layers, a resist in which green and blue pigments are dispersed can be used. For the correction of BM, a film coated with a material such as chrome that blocks visible light can be used. As a result, all the defects of the R, G, and B pixels and BM can be corrected, and an apparatus capable of correcting all the regions of the substrate can be realized with a simple configuration. Furthermore, since all defects can be corrected only by moving and rotating the film reel, there are merits such that correction can be performed in a short time and the positional deviation is small.

Since correction is performed by laser ablation in the present invention, there is no need for the film and the substrate to be brought into close contact as in the prior art. Therefore, stable correction can be performed regardless of the surface state of the substrate. By adjusting the power of the short pulse light and the irradiation time, the amount of the colored layer deposited can be easily controlled. Accordingly, it is possible to make corrections so that the pixels have substantially the same display characteristics as the pixels in the pattern portion of the substrate, and any material can be used for the colored layer, thereby improving the quality of the liquid crystal display device. be able to. In the above description, the color filter substrate for a liquid crystal display device has been described. However, the present invention can also be used for a color filter substrate for a solid-state imaging device such as a CCD camera. Of course, it can be used for pattern substrates other than the color filter substrate. For example, it can be used to correct a phosphor such as a PDP or a cathode ray tube. In the above description, the foreign material 65 is an opaque material that becomes a black defect. However, the foreign material 65 may be a transparent material. Furthermore, a colored layer or the like that is not provided with high accuracy may be removed. These foreign matters that must be removed are called defects. By removing this defect, the defect can be corrected.
Example 2

  The defect correcting apparatus according to this example is the same as the defect correcting apparatus described in Example 1, except that the film 5 is changed. Since the configuration contents described in the first embodiment are the same configuration, description thereof is omitted. The film used for the defect correction apparatus in the present embodiment will be described with reference to FIG. FIG. 6 is a plan view showing the configuration of the film 5. In FIG. 6, 51 is an R colored layer, 52 is a G colored layer, 53 is a B colored layer, 54 is a light shielding layer, and 55 is a transparent layer. In this example, one film is provided with R, G, and B colored layers, a light-shielding layer, and a transparent layer, and the defects at the R, G, and B pixels and BM of the color filter substrate are corrected with one film. It is something that can be done. The R colored layer 51, the G colored layer 52, the B colored layer 53, the light shielding layer 54, and the transparent layer 55 are formed in different portions of the film.

  The film 5 includes a base film and an R colored layer 51, a G colored layer 52, a B colored layer 53, and a light shielding layer 54 provided on one side thereof. FIG. 6 shows a structure of a part of the film. In practice, the R colored layer 51, the G colored layer 52, the B colored layer 53, and the light shielding layer 54 are repeatedly provided on the film 5. The R colored layer 51, the G colored layer 52, the B colored layer 53, and the light shielding layer 54 are provided with a gap therebetween, and a transparent layer 55 composed only of a base film is provided therebetween. . The transparent layer 55 only needs to transmit the light from the lamp light source 9 so that the defective portion can be observed by the CCD camera 12, and a layer other than the base film may be provided. The materials for the base film, the colored layer, and the light shielding layer 55 can be the same as those in the above-described embodiments. The film 5 is wound around the film reel 8 and arranged so that the surface on which the colored layer and the light shielding layer 54 are provided faces the substrate 6 in the same manner as in the above-described embodiment. Then, by rotating the film reel 8, the film is sent out in the direction of the arrow, and the position of the laser spot is adjusted to the transparent layer 55, the R colored layer 51, the G colored layer 52, the B colored layer 53 or the light shielding layer 54. Can do.

  The transparent layer 55 is positioned at the position of the laser spot when detecting a defect and removing a foreign substance. If the transparent layer 55 is a material that transmits light from the lamp light source 9, this light is detected by the CCD camera 12. And after detecting a defect like Example 1, the transparent layer 55 of the film 5 is opened by laser ablation, and a foreign material is removed. Thereby, the black defect becomes a white defect. The film reel 8 is rotated so that the colored layer or the light-shielding layer corresponding to the defective portion is positioned at the laser spot. Then, similarly to the above-described embodiment, the colored layer or the light shielding layer 54 is transferred by laser ablation to correct the white defect. It is desirable to adjust the laser output or provide a filter or the like so that the base film does not open when white defects are repaired.

  The defect correction apparatus according to the present invention can be used not only for color filter substrates but also for other pattern substrates. For example, it can be used for a thin film transistor array substrate of a liquid crystal display device. In this case, by providing a conductive layer made of a metal such as chromium on the film and transferring the conductive layer with short pulse light, the pattern of wiring, electrodes, and the like can be corrected. Thereby, the disconnection of the wiring can be repaired. Or you may make it correct the defect of the insulating layer between wiring by providing an insulating film in a film. Furthermore, the photomask pattern can be corrected. Also in this case, the pattern can be corrected by transferring a light shielding layer such as chrome. In order to correct defects in this way, it is possible to correct various types of pattern substrate defects by providing a film with a transfer layer (colored layer, light-shielding layer, conductive layer, etc.) of a material corresponding to the location to be corrected. it can. When the substance to be transferred is transparent to the short pulse laser beam, a light absorption layer may be added between the film and the transfer layer. Or you may comprise the film itself with the substance which absorbs a short pulse laser beam. In this case, the light absorption layer becomes a propellant for laser ablation deposition. The structure in which the light absorption layer is provided on this film is suitable for the method of depositing the phosphor. In the present embodiment, as described above, the position of the laser spot can be changed from the transparent layer 55 to the light shielding layer 54 or the colored layer by rotating the film reel. Thereby, after detecting a defect, short pulse light can be irradiated to a defect position, without moving an optical system or a stage. Therefore, it is possible to accurately irradiate the position of the defect with the short pulse light, and to perform the repair accurately.

The means for changing the position irradiated with the short pulse laser beam to a different layer is referred to as film changing means. In this film changing means, with the optical system and the stage fixed, a different transfer layer is provided on one film 5 as shown in this embodiment, and the film reel 8 on which the film 5 provided is rotated. In addition to the rotating means 14, film reel moving means for moving the film reel 8 to replace the film 5 provided with different layers as shown in the first embodiment is included. Furthermore, it is assumed that the laser irradiation position is moved to a different layer by interlocking the optical system and the substrate stage. Of course, these may be used in combination.
Example 3

  A defect correction apparatus and a defect correction method according to this embodiment will be described with reference to FIGS. In addition, description is abbreviate | omitted about the content similar to the content demonstrated in Example 1 and Example 2. FIG. FIG. 7 is a diagram showing the configuration of the defect correction apparatus. FIG. 8 is an enlarged cross-sectional view showing the configuration of the substrate and the film. FIG. 8A shows a configuration when a defect is corrected by irradiating the film with short pulse light, and FIG. 8B shows a configuration of the substrate with the defect corrected. In this embodiment, a transparent glass substrate for a photomask is used as the substrate 6. First, a photomask manufacturing process will be described. A chromium film 68 is formed on the substrate 6 by vapor deposition, sputtering, or the like. The chromium film 68 functions as a light shielding film in the exposure process. Further, a resist 67 for patterning the chromium film 68 is provided on the chromium film 68. The resist 67 is a photosensitive resin or the like, and is applied on the chromium film 68 by a spin coater or the like. After drawing a pattern with a drawing apparatus using an electron beam or laser light, a resist pattern is formed with an alkali developer. As a result, the configuration shown in FIG. When the exposed chromium film 68 is etched using the resist pattern as a mask, a light shielding pattern is formed. Then, when the resist is removed, the photomask is completed.

  In this embodiment, a method for correcting a white defect 66 provided in a part of the resist 67 will be described. If there is a white defect 66 such as a pinhole in a part of the resist pattern, the chromium film 68 under the white defect 66 is etched when the chromium film is etched. Therefore, if etching is performed without any white defect in the resist, the white defect portion of the resist pattern becomes a white defect in the photomask. In order to prevent the white defect of the photomask, a method for correcting the white defect of the resist pattern will be described. In this embodiment, a photomask substrate 6 provided with a resist pattern after resist development is placed on a stage 7. The defect correction apparatus according to the present embodiment includes a lamp light source 9 and a CCD camera 12 as a defect detection mechanism. Furthermore, a short pulse laser light source 1 and a beam shaping mechanism 2 are provided as defect correction mechanisms. Observation white light emitted from the lamp light source 9 is incident on the objective lens 4 by the half mirror 11. This light is collected by the objective lens 4, passes through the film 5, and enters the substrate 6. Then, the light reflected by the substrate 6 is detected by a CCD camera, and the presence or absence of a defect is determined in the same manner as in the first embodiment. The stage 7 is an XY stage and can detect defects on the entire surface of the substrate 6.

  A film 5 is provided on the substrate 6. The film 5 has a gap of about 10 μm between the film 6 and the substrate 6 by ejecting air using the air ejection means 13. Since the resist 67 is usually formed of a resin or the like, the surface is uneven. However, by using the air blowing means 15 to bring the film 5 and the substrate 6 close to each other, the gap between the film 5 and the substrate is set at an appropriate distance. Can be. The resist pattern is not affected by pressurization or the like. Thereby, it is possible to transfer with high accuracy.

  The film 5 is wound around a rotatable film reel 8. The film 5 is provided with a transparent layer and a transfer layer as shown in Example 2. At the time of defect detection, the light from the lamp light source 9 passes through the transparent layer and irradiates the substrate, and defect detection is performed by detecting this light with the CCD camera 12 as in the first embodiment. At the time of defect correction, the film reel 8 is rotated to move the transfer layer to the position of the laser spot. The short pulse light from the short pulse laser light source 1 is shaped by the beam shaping mechanism 2 so as to be irradiated with spot light having the same shape as that of the defect, and enters the half mirror 3. Then, the light is reflected in the direction of the substrate 6 by the half mirror 3, condensed by the objective lens 4, and incident on the film 5. Since the short pulse laser light from the short pulse laser light source 1 and the illumination light from the lamp light source are on the same axis, it is possible to irradiate the short pulse laser light at the same position as the detected defect and accurately detect the defect. Can be corrected. A state in which the short pulse laser beam is irradiated onto the film 5 is as shown in FIG.

  Here, a silicon layer 56 is provided on the surface of the film 5 on the substrate side. This silicon layer 56 functions as a transfer layer transferred to the substrate 6 by laser irradiation. Then, the silicon layer 56 is transferred to the white defect 66 portion of the resist 67 to prevent the chromium film 68 from being exposed to the etching solution when the chromium film 68 is etched. An acid such as an aqueous solution of ceric ammonium nitrate is used as the etchant for the chromium film 68. Therefore, it is desirable to use a material resistant to the etching solution, and in addition to silicon, a metal, a semiconductor, a silicide, an organic substance, or the like can be used. These materials are coated on the film 5 in advance. Even in the case of dry etching, it is desirable to use a material having etching resistance.

  The short pulse laser beam from the short pulse laser light source 1 is condensed and irradiated on the film 5 on the point where the defect is detected. The short pulse laser light source 1 can use a YAG laser as in the first embodiment. Then, 355 nm of the third harmonic of the YAG laser is used to irradiate short pulse light. By the laser ablation, the silicon layer 56 having the same shape as the defect is removed from the film 5, deposited on the area of the white defect 66, and transferred onto the chromium film 68. As a result, the configuration shown in FIG. 8B is obtained, and the silicon layer 56 is transferred to the portion where the white defect 66 is present, and the correction portion 69 is provided. By performing etching in this state, it is possible to prevent the chromium film 68 under the correction portion 69 from being exposed to the etching solution, and the chromium film 68 can be left as a light shielding film. That is, since the correcting portion 69 of the chromium film 68 functions as a resist, the white defect is corrected. Thereby, a chromium pattern can be formed accurately. Thereafter, the resist 67 and the correction portion 69 are removed. By the above method, a photomask pattern can be accurately formed, and the productivity of the photomask can be improved. Further, by using this photomask, productivity and yield of a semiconductor device or a liquid crystal display device can be improved. In the case of pattern edge correction, a silicon layer is deposited wider than the defective portion. Then, after the chromium film 68 is etched, the portion of the chromium film protruding by laser ablation is removed to form a pattern edge.

By the above-described method, it is possible to prevent the occurrence of white defects (missing chromium patterns). Conventionally, partial film deposition techniques such as laser CVD, FIB deposition, spot exposure or lift-off have been required to correct white defects in photomasks. By adding a defect correction mechanism to a part, a stable defect can be corrected with a simple configuration. In addition, since the laser can be accurately irradiated at the same position as the location where the defect is detected, stable repair is possible. Also in the present embodiment, it is possible to provide a wavelength tunable filter as in the first embodiment and to use the light from the lamp light source 9 for heating.
Example 4

  A defect correction method for a patterned substrate according to the present embodiment will be described with reference to FIGS. FIG. 9 and FIG. 10 are enlarged cross-sectional views showing the structure of the defective portion in the defect correcting process. The configuration of the defect correcting apparatus of the present embodiment is the same as that of the first embodiment. And the foreign material or defect on a color filter board | substrate is detected like Example 1, and the short pulse light is irradiated to the part through a film. As a result, part of the film 5a and foreign matter are removed substantially simultaneously by laser ablation. As a result, the structure shown in FIG. 9A is obtained, and an opening is provided in the film 5a.

  The resin solution 17 colored in the defective part is dropped from above using a liquid dispenser. The dropped resin solution 17 adheres to the substrate 6 from the opening of the film 5a and spreads on the film 5a. For example, the nozzle of the liquid dispenser is provided in the defect correcting device so as to be movable in the horizontal direction, and the nozzle 16 is moved over the opening of the film 5a as shown in FIG. 9B. The colored resin solution 17 is blown out over a wider area of the opening. The resin solution 17 is colored so as to be substantially the same color as the color of the colored layer of the color filter for defect correction, and is colored red here. The resin solution 17 may have an appropriate viscosity by adjusting the concentration of the resin. As a method of attaching the resin solution 17 to the substrate from the nozzle, there is a method of spraying micron-order fine particles using a spray nozzle in addition to a method of dropping the resin solution 17 by one drop. And the resin solution 17a adhering to the board | substrate 6 is dried moderately. In this drying step, the resin solution 17a can be dried by light heating using the lamp light source 9, as shown in FIG. That is, drying is performed by irradiating all or part of the resin solution 17a with light from the lamp light source 9. At this time, the objective lens can be moved in the optical axis direction to change the region irradiated with light, and the drying range can be adjusted. Alternatively, the resin solution 17a may be dried by ejecting air by the ejection means 13. By drying the resin solution 17a, the solvent may evaporate and the attached portion may be reduced. Therefore, it is desirable that the resin solution 17a be deposited to be thicker than a predetermined thickness.

  After drying, it is also possible to remove the resin solution 17a by irradiating the edge portion of the opening with the short pulse light from the short pulse laser light source 1. That is, as shown in FIG. 10 (d), the resin solution 17a in the defective portion remains without irradiating the center of the opening with the short pulse light, and the short pulse light is irradiated only in the vicinity of the periphery of the opening. The resin solution 17a at the edge portion is removed. Here, movable optical components such as a mirror and a lens are provided in the optical path of the short pulse light, and the irradiation position of the short pulse light is controlled by this optical component. For example, the laser spot can be finely adjusted by changing the inclination of the half mirror 3. The laser spot is further reduced by the beam shaping mechanism 2 and the objective lens 4, and short pulse laser light is irradiated over the entire circumference of the opening using such an optical component. Thereby, the resin solution 17a near the edge of the opening is removed by laser ablation while the resin solution 17a at the center of the opening remains. As a result, the configuration shown in FIG. In a state where the resin solution 17 near the edge of the opening is removed, the film reel 8 is rotated to move the opening of the film 5a. Then, the stage 7 is moved to remove the film 5 a from the substrate 6. As a result, as shown in FIG. 10 (f), the resin is attached to the defective portion, and this resin becomes the correction layer 17b and the defect is corrected. As described above, since the resin solution 17a at the edge portion of the opening is removed by laser ablation, the film 5a can be quickly removed, and the film 5a can be prevented from adhering to the substrate 6 and becoming a defect. . Further, since the resin solution 17a removed by laser ablation is reattached on the film 5a or near the center of the opening, it does not become a new defect. Furthermore, since the resin solution 17a is removed by irradiating the short pulse light, the shape of the adhered portion of the resin solution 17a can be adjusted. Thereby, a defect can be corrected correctly.

  In the defect correcting method according to the present embodiment, the tolerance for the position where the resin solution is attached increases. In addition, since a relatively large amount of resin may be blown out at a time, a large nozzle can be used to correct a minute pattern. Thereby, management becomes easier than a nozzle having a small opening necessary for blowing out a minute amount. Since the size of the opening of the film 5a can be adjusted by the beam shaping mechanism 2, the film can be irradiated with pulsed laser light in an arbitrary shape. Thereby, the shape of the opening of the film can be matched with the pixel shape, and it is possible to easily correct the rectangular region that is substantially the same as the pixel shape. By heating and drying the resin solution 17a, it is possible to prevent a phenomenon that when the film 5a is peeled off, the resin attached to the defective portion of the substrate sticks to the film side and is peeled off from the defective portion of the substrate. In order to remove the resin accumulated at the tip of the nozzle or to bring the resin solution to the specified concentration, it is necessary to perform blank shots at locations other than the defective portion. Time difference from hitting to correction can be reduced. Further, by observing the landing point at the time of empty shot with a CCD camera, it is possible to correct the positional deviation that occurs from the nozzle blowing to the landing. Thus, by using the defect correction method according to the present embodiment, it is possible to perform highly accurate defect correction.

  After the correction liquid 17a is attached to the substrate or after the resin solution is dried, the resin can be scraped into the opening with a squeegee or the excess resin solution can be removed with the squeegee. As a result, even when the blowing amount is too large, the amount of the resin solution 17a attached to the defective portion of the substrate 6 is controlled by the ratio of the solvent in the resin solution (the reduction ratio after drying) and the film thickness of the film. Can do. That is, the final thickness of the correction layer 17b can be controlled, and a pattern can be formed accurately. This makes it possible to control the color and transmittance of the defect correction portion. Further, the adhesion point of the resin solution on the film may be shifted from the film opening toward the movement start position of the squeegee. Even in this case, the resin solution 17a can be uniformly attached to the defective portion of the substrate 6 by scraping the resin into the opening using a squeegee.

  On the other hand, if the material of the squeegee is composed of a material such as silicon or Teflon (registered trademark) that repels the resin solution, and the material of the film is composed of a material having higher wettability than a squeegee such as polyimide, the scraped resin Will remain on the film. As a result, no resin remains in the squeegee, so that cleaning of the squeegee becomes unnecessary or the cleaning cycle can be lengthened. Further, since the excess resin remains attached to the film 5a and is taken up together with the used film 5a, it does not adhere to any portion other than the defective portion of the substrate 6 and does not create a new defect. Furthermore, since the excess resin can be recovered by replacing the used film 5a, the resin does not adhere to the apparatus, and maintenance can be easily performed.

  Further, when the resin solution 17 is blown from the nozzle 16 to the substrate, the resin solution 17 a may be rounded due to surface tension, and the resin solution 17 a may not contact the substrate 6. In this case, it is desirable to make the periphery of the opening of the film 5a thin. This procedure will be described with reference to FIG. First, as shown in FIG. 11A, the portion near the opening of the film 5a is thinned by laser ablation. By irradiating the short pulse laser light from the short pulse laser light source 1 around the opening of the film 5a, a part of the film 5a is removed, and the structure shown in FIG. At this time, the output of the short pulse laser light source 1 is set lower than when the opening is provided through the film 5a. And the position of a laser spot is moved and short pulse laser light is irradiated to the perimeter of an opening part. Thus, by making the periphery of the opening of the film 5a thin, even when the film 5a is thick, the substrate 6 and the resin solution 17a can be brought into contact with each other. As a result, the configuration shown in FIG. At this time, since a thin portion and a thick portion are provided on the film 5a, a step is formed, and the resin solution 17a adheres thereon. And as shown in FIG.11 (c), the light from the lamp light source 9 is irradiated and it is made to dry. The subsequent steps are the same as those shown in FIG. Thereby, even if it is a case where the quantity of the resin solution 17a to adhere is large, it can be made to adhere easily.

  Alternatively, as shown in FIG. 12, the resin solution 17 can be adhered to the substrate 6 by spraying fine particles from the nozzle 16. In this case, as shown in FIG. 12A, an opening is provided in the film 5a by laser ablation. Then, as shown in FIG. 12B, fine particles are generated on the substrate 6 from above the opening using the nozzle 16. Thereby, even if it is a case where the film 5a is thick, the resin solution 17a can be made to adhere to the defective part of the board | substrate 6. FIG. And as shown in FIG.12 (c), the light from the lamp light source 9 is irradiated and it is made to dry. The subsequent steps are the same as those shown in FIG. Thereby, even if it is a case where the quantity of the resin solution 17a required for making it adhere is large, it can be made to adhere easily.

  In the above-described embodiment, the resin solution 17 colored red is attached to the substrate 2 from the nozzle 16, but may be blue, green, or black. Thereby, defect correction of a blue colored layer, a green colored layer, and BM is possible. In addition to the color filter substrate, a resin solution colored in a color corresponding to the pattern to be corrected may be attached to the substrate. By drying the resin solution, water in the solution evaporates and the resin is fixed to the defective portion. Of course, a solution other than the resin solution may be used, and a correction liquid corresponding to the pattern to be corrected may be attached to the substrate 1 through the opening of the film 5a. Alternatively, the correction liquid may be dropped from above with a nozzle and attached. By attaching a correction liquid colored according to the correction pattern to the substrate 1, a pattern of any color can be corrected. Further, by adjusting the spot of the short pulse laser beam to adjust the size of the opening, the resin solution can be attached with the same size as the detected white defect, and the white defect can be corrected with high accuracy. Therefore, even when the color filter substrate or the like is corrected, the display quality is not deteriorated.

Embodiment 5 FIG.
A pattern substrate defect correcting method according to the present embodiment will be described with reference to FIG. FIG. 13 is an enlarged cross-sectional view showing a configuration of a defect portion in a defect correcting process. The configuration of the defect correcting apparatus of the present embodiment is the same as that of the first embodiment. And the foreign material or defect on a color filter board | substrate is detected like Example 1, and the short pulse light is irradiated to the part through a film. As a result, part of the film 5a and foreign matter are removed substantially simultaneously by laser ablation. Thus, the structure shown in FIG. 13A is obtained, and an opening is provided in the film 5a. In the present embodiment, a nozzle 16 of a liquid dispenser that can move in the horizontal direction is provided in the same manner as the above-described embodiment.

  In this state, the nozzle 16 is moved over the opening. As a result, the configuration shown in FIG. Similarly, a resin solution 17 colored in a color corresponding to the correction pattern is attached to the tip of the nozzle 16 of the dispenser. This resin solution 17 protrudes beyond the tip of the nozzle 16. In this embodiment, the nozzle 16 is provided so as to be movable in the vertical direction. The nozzle 16 is moved downward to approach the substrate 6, and the resin solution 17 is brought into contact with the film 5 a and the substrate 6. The stage of the substrate 6 may be moved upward to bring the substrate 6 and the nozzle 16 closer. As a result, as shown in FIG. 13B, the resin solution 17a adheres to the defective portion of the substrate 6 through the opening. When the nozzle 16 is moved up or the stage is moved down to increase the distance between the substrate 6 and the nozzle 16, most of the resin solution 17 a attached to the tip of the nozzle 16 returns to the nozzle side. As a result, the structure shown in FIG. 13C is obtained, and the resin solution 17a adheres to the defective portion as in the fourth embodiment. In the present embodiment, even when dripping using a large nozzle, the amount of the resin solution 17a attached to the substrate 6 can be limited. Therefore, a very small amount of resin solution can be attached to the substrate 6, and the thickness of the attached resin layer can be easily controlled. Thereafter, similarly to Example 4, the short pulse laser light source 1 is used to remove the resin solution 17a around the opening, and the lamp light source 9 is used to dry the resin solution. Then, the film 5 a is rotated and peeled from the substrate 6, and the stage 7 is moved to remove the film 5 a from the substrate 6. As a result, as shown in FIG. 13D, colored resin adheres to the defective portion, and the correction layer 17b is provided to correct the defect in the colored layer. With the above-described apparatus configuration and defect correction method, the white defect of the pattern substrate can be corrected accurately. Moreover, a pattern board without a defect can be manufactured by adding a process for correcting these defects to the manufacturing process of the pattern board.

Example 6
A defect correction apparatus according to the present embodiment will be described with reference to FIG. FIG. 15 is a diagram schematically showing a configuration of a color filter substrate defect inspection apparatus according to the present embodiment. Since the configuration contents described in the above-described embodiment are the same configuration, description thereof will be omitted. In this example, after removing foreign matter on the film by laser ablation as in the above example, the colored layer provided on a different film is thermally transferred by a heater block from above the formed opening.

  In this embodiment, in addition to the defect inspection apparatus shown in FIG. 1, a film 18 having a colored transfer layer and a heater block 20 for thermal transfer are provided on the film 5 as shown in FIG. The film 18 is attached to a film reel 19, and the film 18 is fed out by rotating the film reel 19. The film 18 and the heater block 20 can be slid and moved over the defect position of the substrate. For example, the objective lens 4 and the air ejection means 13, the film reel 19 and the heater block 20 may be connected to one slider (not shown) and slid. When removing the foreign matter, the objective lens 4 and the air ejection means 13 are arranged on the defect position, and when transferring the transfer layer, the slider 18 is moved to arrange the film 18 and the heater block 20 on the defect position. it can. Of course, you may move by moving means other than a slide. Further, the film 18 and the heater block 20 may be moved under the air ejection means 13 without moving the objective lens 4 and the air ejection means 13.

  When the film 18 is moved over the defect position, the configuration shown in FIG. 16 is obtained. FIG. 16 is a top view showing the configuration of the substrate 6 and the film. When the film 18 is moved in the X direction, the film 18 is disposed on the film 5. The film 18 and the substrate 6 are arranged to face each other through the opening 15 of the film 5 provided at the defect position, and the transfer layer of the film 18 is provided at the position of the opening 15. Thereby, the transfer layer of the film 18 can be transferred to the defective portion of the substrate through the opening 15.

  Here, when the film 18 is moved onto the film 5, the air from the air ejection means 13 is not ejected to the film 5. Thereby, there exists a possibility that the position of the opening part 15 of the film 5 may shift | deviate from a defect position. In this case, it is desirable to fix the positions of the substrate 6 and the film 5 before moving the film 18. As a method for fixing the film 5 and the substrate 6, there are a method in which silicon rubber or the like is placed on the film 5 during air ejection and a method in which the film 5 is charged and fixed to the substrate 6 by electrostatic force. .

  In the method of placing silicon rubber, silicon rubber is placed on both sides of the opening. Thereby, the position of the film 5 is fixed. In the method of fixing the film 5 by electrostatic force, for example, when the film 5 is sent out by rotating the film reel 19, the film 5 is charged by friction. The positions of the film 5 and the substrate 6 are fixed by the electrostatic force of the charged film 5. In the present embodiment, the film 5 and the substrate 6 may be fixed by the above-described method without using the air ejection means 13, and the opening 15 may be provided in the film 5. Further, the film 5 and the substrate 6 may be fixed by ejecting air to both sides of the opening 15 where the film 18 does not overlap.

  The film 18 is a film having a transfer layer to be transferred by thermal transfer. For example, Transer (registered trademark) manufactured by Fuji Film Co., Ltd. can be used. With this film, the adhesion of the transfer layer can be improved. The configuration of the film 18 will be described with reference to FIG.

  The film 18 includes a cushion layer 18d formed on the base layer 18e. An oxygen blocking layer 18c is provided on the cushion layer 18d, and a transfer layer 18b colored with various pigments is provided thereon. The transfer layer 18b is formed of, for example, a photosensitive resin. The pigment of the transfer layer 18b is colored according to the pixel of the color filter to be corrected. The transfer layer 18b is transferred to the substrate 6 to correct white defects. A polypropylene cover film 18a is pressure-bonded on the transfer layer 18b for surface protection. Further, an electron conductive antistatic layer 18f is provided on the back surface of the base layer 18e for the purpose of preventing adhesion of dust or the like due to peeling charging or the like.

  The base layer 18e is made of, for example, PET having a thickness of about 75 μm. As the cushion layer 18d, a weak alkali-soluble thermoplastic resin having a thickness of about 20 μm can be used. The cushion layer 18d can absorb the step in the defective portion of the substrate and improve the adhesion of the transfer layer. The oxygen blocking layer was 1.6 μm thick, the transfer layer 18 b was 2.0 μm thick, and the cover film was 1.2 μm thick. The configuration of the film 18 is a typical example, and is not limited to the above-described configuration. For example, the cover film 18a, the oxygen blocking layer 18c, or the antistatic layer 18f may not be provided. In particular, since dust rarely adheres to the film 18 disposed in the opening 15, the cover film 18 a may not be provided. The transfer layer 18b is not limited to the photosensitive resin layer, and may be a colored layer corresponding to the pattern to be transferred.

  The heater block 20 is provided so as to be movable up and down. When the transfer layer 18 b of the film 18 is attached, the heater block 20 moves downward to press the film 18 against the substrate 6. The configuration of the substrate 6 and the film 18 at this time is shown in FIG. FIG. 18 is a cross-sectional view showing the configuration of the substrate 6 in the defect correction portion. Here, the cover film 18a, the oxygen blocking layer 18c, the base layer 18e, and the antistatic layer 18f of the film 18 are not shown. When the film 18 is pressed by the heater block 20, the configuration shown in FIG.

  By pressing the heater block 20, the film 5 having the opening 15 is sandwiched between the film 6 having the substrate 6 and the transfer layer. Accordingly, the transfer layer 18 b is pressed against the defect position of the substrate 6 through the opening 15 of the film 5. Since the opening is provided at the same size and the same position as the place where the foreign matter has been removed by laser ablation, it coincides with the place that needs to be corrected. By transferring the transfer layer 18b through the film 5, the transfer layer 18b adheres to the substrate 6 at the opening. On the other hand, the transfer layer 18 b is attached to the upper surface of the film 5 in a region other than the opening.

  As described above, by transferring the transfer layer 18b serving as the colored layer through the opening of the film 5, it is possible to prevent the transfer layer 18b from adhering to a region other than the defective portion. As a result, the transfer layer 18b can be transferred only to the defective portion with a simple configuration, and the defect can be corrected accurately. Further, since the transfer layer 18b is not attached to an extra portion, it is not necessary to remove the extra transfer layer 18b in a later step, and productivity can be improved.

  Further, in this embodiment, the transfer layer 18b is pressed through the thermoplastic resin layer 18d. The thermoplastic resin layer 18 d has elasticity and functions as a cushion layer when the film 18 is pressed against the substrate 6. Thereby, the step on the substrate caused by the colored layer 62, the BM 64, and the film 5 is absorbed, so that the thermoplastic resin layer 18b can be accurately transferred. Since the thermoplastic resin layer 18 has a thickness of 20 μm, for example, even if the colored layer is 2 μm, the BM is 2 μm, and the film 5 is 8 μm in thickness, it absorbs the steps generated by these and accurately transfers them. Can do.

  After the heater block 20 is raised and separated from the substrate 6. When the film 18 is moved and the film 18 is peeled off from the substrate 6, the configuration shown in FIG. Thus, the defect can be corrected by the dry process. At this time, when the oxygen barrier layer 18c or the thermoplastic resin layer 18d adheres to the substrate 6 side, the oxygen barrier layer 18c or the thermoplastic resin layer 18d is removed by performing a shower spray treatment with a weak alkaline aqueous solution. Alternatively, the oxygen blocking layer 18c and the thermoplastic resin layer 18d are removed by a method such as scraping with an abrasive tape or wiping with a cloth tape. As a result, as shown in FIG. 18B, the transfer layer 18b serving as a colored layer is transferred to the position of the white defect, and the defect can be corrected.

  By using the film 18 as described above, characteristics such as thickness, color, and transmittance of the layer transferred as the colored layer can be easily controlled. That is, by forming the transfer layer 18b of the film 18 with desired characteristics, the corrected colored layer can be corrected so as to be in substantially the same state as a normal colored layer. Thereby, accurate defect correction can be performed. Moreover, by transferring using the film 18, the adhesion of the transfer layer can be improved.

  In the thermal transfer process described above, to increase the transfer speed. The substrate 6 may be preheated. For example, it is possible to preheat the substrate 6 by placing it on a hot plate, and it is also possible to preheat it by irradiating infrared rays. When infrared rays are used, the infrared light from the lamp light source 9 may pass through the filter 10, or a heating light source may be provided separately.

  Furthermore, in this embodiment, in order to improve the adhesion of the transfer layer, a heater block having a convex portion corresponding to the defect pattern can be used. The configuration of the heater block 20 will be described with reference to FIG. FIG. 19 is a cross-sectional view showing the configuration of the heater block. A convex portion 20 c is provided at the center of the heater block 20. By pressing the heater block 20 in the direction of the arrow, the film 18 is pressed against the substrate, and the colored layer can be transferred.

  The heater block 20 has a cylindrical shape of 5 mm in order to increase the heat capacity, and is heated to about 130 ° C. during transfer. A convex portion 20 c is provided on the bottom surface of the heater block 20. The convex portion 20c is, for example, a cylindrical shape having a diameter of 500 μm and a height of 10 μm. In this embodiment, in order to form such a minute convex portion, the central portion 20b and the outer peripheral portion 20a of the heater block 20 are formed of materials having different thermal expansion coefficients.

  For example, the central portion 20b is made of a metal such as iron having a large thermal expansion coefficient, and the outer peripheral portion 20a is formed of a ceramic such as SiC having a small thermal expansion coefficient. At normal temperature, the central portion 20b and the outer peripheral portion 20a are formed to be flat. When the heater block 20 is heated to 130 ° C., the central portion 20b protrudes due to the difference in thermal expansion coefficient, and the convex portion 20c is formed. Then, the size and thermal expansion coefficient of the central portion 20b are designed so that the convex portion has a desired shape, size, and height. Thereby, even if it is a micro convex part, a convex part can be accurately formed in a desired magnitude | size.

  Since this convex part 20c fits corresponding to the defective part of a board | substrate, even if there exists a level | step difference, adhesiveness can be improved. Moreover, in order to make the height of the convex part constant, the bottom of the heater block 20 may be polished so as to be smooth at room temperature. Of course, the size and height of the convex portion 20c can be of a size corresponding to the pattern for correcting the defect, the thickness of the film, and the like.

Example 7
In this embodiment, a procedure for improving the adhesion of the transfer layer is added to the defect correction method shown in Embodiment 6. Since the configuration contents described in the above-described embodiment are the same configuration, description thereof will be omitted. In the above-described embodiment, the transfer layer is transferred through the rectangular opening 15 after removing foreign matters and the like to be removed by laser ablation. In this case, the air between the transfer layer and the substrate 6 may remain and the adhesion may be reduced. The procedure for removing this air will be described with reference to FIG. FIG. 20 is a top view showing the configuration around the opening of the film 5.

  In this embodiment, after removing foreign matter on the substrate by laser ablation, the air removal portion 21 is formed on the film 5. The air removing unit 21 is formed around the opening 15 formed by laser ablation. After removing the foreign matter, laser light is irradiated around the corners of the opening 15 by adjusting the inclination of the half mirror 3. At this time, by irradiating with a power lower than the power of the laser beam at the time of removing the foreign matter, a part of the film 5 is removed and the film 5 becomes thin. That is, the air removing portion 21 shown by hatching in FIG. 20 is thinner than other portions of the film 5. By similarly irradiating the four corners of the opening 15 with laser light, the configuration shown in FIG. 20 is obtained.

  Here, the size of the air removing unit 21 is smaller than that of the opening 15. For example, the size of the opening may be a square having a side of 100 μm, and the size of the air removing unit 21 may be a square having a side of 20 μm. And it forms so that a part of opening 15 and the air removal part 21 may overlap. Since the laser beam is irradiated at a low power, the pattern on the substrate is not removed even at a location overlapping the opening 15. Therefore, the air removal unit 21 can be formed without affecting the optical characteristics of the color filter. By forming such an air removing portion 21, a portion where the thickness of the film is reduced is formed in the peripheral portion of the rectangular opening 15. Since the film 15 is removed from the opening 15, the film gradually increases from the opening by forming the air removing part 21.

  The structure of the film 5 and the substrate 6 on which the air removing unit 21 is formed is shown in FIG. FIG. 21 is a cross-sectional view showing the configuration of the film 5 and the substrate 6, and shows a state where the film 18 is pressed against the substrate 6 by the heater block 20. After the air removal unit 21 is formed, the heater block 20 is moved over the opening 15 and the heater block 20 is pressed down. Usually, when the film 18 is pressed, the film 18 comes into contact with the substrate 6 from the center of the opening 15. Accordingly, air existing between the substrate 6 and the transfer layer 18 b gradually escapes outward from the center of the opening 15. Since the air removing portion 21 is provided around the opening, the film 5 has two stages as shown in FIG. When the air removal unit 21 is not provided, the edge of the opening and the transfer layer 18b come into contact with each other, there is no possibility of air escape and air may remain. However, when the air removal unit 21 is provided, the two steps are provided. The air between the opening 15 and the transfer layer 18b escapes from the formed portion. Thereby, adhesiveness can be improved.

  In FIG. 20, the air removing unit 21 is provided at the four corners of the opening 15, but the air removing unit 21 may be provided on the entire outer periphery of the rectangular opening 15 as shown in FIG. 22. That is, it is possible to form a rectangular air removal portion 21 larger than the opening 15. Or you may form the rectangular-shaped air removal part 21 extended from each edge | side of the square 15 as shown in FIG. Thereby, the air removal part 21 connected to one side of the four corners of the opening 15 is formed. Of course, the structure of the air removal part 15 is not restricted to the structure shown in figure. The shape of the air removing unit 21 can be arbitrarily formed by changing the slit width of the beam forming mechanism 2 or the like. When the opening 15 and the air removal unit 21 are formed by changing the slit width of the beam forming mechanism 2, it is preferable that the opening 15 and the air removal unit 21 are rectangular. Of course, the structure of the opening part 15 and the air removal part 21 is not restricted to a rectangular shape.

  Moreover, the air removal part 21 can be made into arbitrary thickness by controlling the power of the laser light source 1. Furthermore, not only a part of the film 5 is removed and thinned, but the film 5 may be completely removed. In this case, since the film 5 penetrates, it is desirable to narrow the width of the air removing unit 21 so that the transfer layer is not transferred through the air removing unit 21. The air removal unit 21 described above is not limited to a defect correction apparatus using a heater block, and can be used for a defect inspection apparatus using a dispenser shown in the fifth embodiment, for example. That is, after providing the opening part 15 by laser ablation, the air removal part 21 is formed, and the colored resin solution may be dripped from there by a dispenser. Since the resin solution comes into contact with the substrate from the center of the opening, air remaining between the resin solution and the substrate can reduce air remaining between the resin solution and the substrate. Accordingly, it is possible to improve the adhesion of the corrected portion. In addition, since the air removal part shown in the present Example can remove even gas other than air, the air removal part 21 includes what removes gas other than air.

Example 8 FIG.
The defect correction apparatus according to the present embodiment will be described with reference to FIG. Since the configuration contents described in the above-described embodiment are the same configuration, description thereof will be omitted. In the present embodiment, a film 18 having a colored layer for transfer onto the film 5 is overlapped as in the sixth embodiment. The colored layer is transferred by irradiating laser light from the laser light source 1 on the film 18.

  In the same manner as in Example 6, an opening is provided in the film 5 by laser ablation to remove defects. And the film reel 19 is moved and the film 18 is arrange | positioned on an opening part. Thereby, it becomes the structure similar to FIG. In this embodiment, since the heater block is not used, it is not necessary to move the objective lens 4 and the air ejection means 13. However, it is desirable to fix the film 5 by disposing the film 18 on the film 5 having the opening so that the air ejection is blocked and the position of the opening is shifted. In order to fix the film 5, the same means as in the above-described embodiment can be used.

  When the film 18 is disposed on the film 5, the configuration shown in FIG. The film 18 used in the present embodiment includes a base film 22, and an expansion layer 23, a separation layer 24, and a transfer layer 25 are provided in this order. Then, the film 18 is disposed so that the defective portion of the substrate 6 and the transfer layer 25 face each other through the opening of the film 5.

  The base film 22 of the film 18 is formed of a material that transmits laser light, such as polyethylene. The expansion layer 23 is an absorption layer that absorbs laser light, and is preferably formed of a material having a low boiling point. When the defect is corrected, laser light having a pulse width of the order of μsec is irradiated and the expansion layer 23 is instantaneously heated to vaporize and expand. Since the base film 22 is provided on the expansion layer 23, there is no gas escape space on the base film side, and the vaporized expansion layer 23 flows out to the substrate side. Thereby, the separation layer 24 and the transfer layer 25 are separated from the base film 22 and attached to the substrate 6. Then, when the laser irradiation is stopped, the expansion layer 23 is cooled and returned to solid, and the configuration shown in FIG. 25B is obtained. By transferring through the opening of the film 5, the transfer layer 25 adheres on the film 5 at locations other than the defective portion, so that the transfer layer 25 or the like adheres only to the defective portion on the substrate. Therefore, it is possible to correct the defect accurately without affecting other parts.

  The separation layer 24 is provided between the transfer layer 25 and the expansion layer 23 in order to separate the transfer layer 25 and the expansion layer 23, and is made of, for example, a material that dissolves in a solution such as acid or alkali. By dropping the solution onto the substrate 6 and dissolving the separation layer 24 attached to the substrate, the separation layer 24 attached on the transfer layer 25 on the substrate side can be removed, and the expansion layer can be removed from the transfer layer 25. 23 can be separated. By separating the transfer layer 25 and the expansion layer 23 using the separation layer 24, the expansion layer 23 is removed from the substrate, and only the transfer layer 25 remains on the substrate 6. Therefore, it is possible to accurately transfer only the transfer layer 25 necessary for defect correction. As a result, the configuration shown in FIG. Since the transfer layer 25 has characteristics such as color, transmittance, and film thickness according to the colored layer of the defect to be corrected, the defect can be corrected accurately. Of course, the method of separating the transfer layer 25 and the expansion layer 23 is not limited to this.

  In the above-described embodiment, the transfer layer 25 is transferred using the laser light source 1, but a light source different from the laser light source 1 may be further provided, and the transfer layer may be transferred by irradiating light from the light source. Moreover, in order to improve adhesiveness, the board | substrate 6 may be preheated, for example by irradiating the infrared rays from the lamp photon 9. Needless to say, some of the above embodiments can be used in combination.

It is a figure which shows the structure of the defect correction apparatus concerning Example 1 of this invention. It is a top view which shows the structure of the film of the defect correction apparatus concerning Example 1 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 1 of this invention. It is a top view which shows the structure of the film of the defect correction apparatus concerning Example 1 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 1 of this invention. It is a top view which shows the structure of the film of the defect correction apparatus concerning Example 2 of this invention. It is a figure which shows the structure of the defect correction apparatus concerning Example 3 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 3 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 4 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 4 of this invention. It is an expanded sectional view which shows the structure of another defect part of the defect correction apparatus concerning Example 4 of this invention. It is an expanded sectional view which shows the structure of another defect part of the defect correction apparatus concerning Example 4 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 5 of this invention. It is an expanded sectional view showing the composition of a color filter substrate. It is a figure which shows the structure of the defect correction apparatus concerning Example 6 of this invention. It is a top view which shows the structure of the film which has an opening part and the transfer layer in the defect inspection apparatus concerning Example 6 of this invention. It is sectional drawing which shows the structure of the film which has a transfer layer concerning Example 6 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 6 of this invention. It is sectional drawing which shows the structure of the heater block in the defect correction apparatus concerning Example 6 of this invention. It is a top view which shows the structure of the opening part of a film, and the air removal part in the defect correction apparatus concerning Example 7 of this invention. It is an expanded sectional view which shows the structure of the defect part in the defect correction apparatus concerning Example 7 of this invention. It is a top view which shows the other structure of the opening part of a film, and the air removal part in the defect correction apparatus concerning Example 7 of this invention. It is a top view which shows the other structure of the opening part of a film, and the air removal part in the defect correction apparatus concerning Example 7 of this invention. It is a figure which shows the structure of the defect correction apparatus concerning Example 8 of this invention. It is an expanded sectional view which shows the structure of the defect part of the defect correction apparatus concerning Example 8 of this invention.

Explanation of symbols

1 short pulse laser light source, 2 beam shaping mechanism, 3 half mirror, 4 objective lens,
5 film, 6 substrate, 7 stage, 8 film reel, 9 lamp light source,
10 wavelength tunable filter, 11 half mirror, 12 CCD camera,
13 Air ejection means, 14 Film reel rotation means, 15 Laser spot,
16 nozzles, 17 resin solution, 17b correction layer, 18 film,
19 Film reel, 20 Heater block, 21 Air removal part 22 Base layer, 23 Expansion layer, 24 Separation layer, 25 Transfer layer 51 Red colored layer, 52 Green colored layer, 53 Blue colored layer,
54 black matrix, 61 red colored layer, 62 green colored layer,
63 blue colored layer, 64 black matrix, 65 foreign matter, 66 defective portion,
67 Resist, 68 Chrome film, 69 Correction

Claims (38)

A defect correction apparatus for removing defects on a patterned substrate,
A pulse laser light source that emits a pulse laser; and
A film provided facing the substrate,
A defect correction apparatus for irradiating a part of the film and the defect substantially simultaneously by laser ablation by irradiating the film with pulsed laser light from the pulsed laser light source.   The defect correction apparatus according to claim 1, wherein the film is thinned by irradiating the pulse laser beam, and a part of the film and the defect are removed substantially simultaneously by laser ablation. Film change means for changing the film to a film having a transfer layer transferred to the substrate;
The defect correction apparatus according to claim 1, wherein the transfer layer is transferred to the substrate by irradiating a film having the transfer layer with pulsed laser light.   The defect correction apparatus according to claim 3, wherein the transfer layer is transferred to a portion where the defect is removed. A nozzle for attaching a correction liquid to the substrate in accordance with a pattern to be corrected on the substrate;
The defect correction apparatus according to claim 1 or 2, wherein the defect is corrected by attaching the correction liquid to the substrate from a portion where the film is removed. Further comprising a film having a transfer layer movable to the position of the place where the film has been removed,
The defect correction apparatus according to claim 1, wherein the defect is corrected by transferring the transfer layer to the substrate from a portion where the film is removed. A defect correction apparatus for correcting a defect by transferring a pattern to a defective portion of a patterned substrate,
A film having a transfer layer transferred to the substrate on a surface facing the substrate, and a film close to the substrate;
A pulse laser light source that emits a pulse laser beam irradiated on the film having the transfer layer; and a pulse laser beam from the pulse laser light source is irradiated on the film having the transfer layer, and the transfer layer is applied to the defective portion of the substrate. Defect correction device to transfer. The substrate is a light shielding film;
A photomask substrate comprising a resist pattern formed on the light-shielding film,
The defect correction apparatus according to claim 7, wherein a defect in the resist pattern is corrected. A defect correction device for correcting defects in a patterned substrate,
A film provided facing the substrate;
A pulse laser light source that emits a pulse laser that irradiates the film and provides an opening in the film;
A nozzle that can move to the position of the opening, and a nozzle that attaches a correction liquid to the substrate in accordance with a pattern to be corrected on the substrate,
A defect correction apparatus for correcting a defect by attaching the correction liquid to a substrate from a portion where the film is removed. A defect correction device for correcting defects in a patterned substrate,
A film provided facing the substrate;
A pulse laser light source that emits a pulse laser that irradiates the film and provides an opening in the film;
A film having a transfer layer movable to a position corresponding to the opening,
A defect correction apparatus for correcting a defect by transferring the transfer layer to the substrate through the opening. A heater block movable to a position corresponding to the opening;
The defect correction apparatus according to claim 10, wherein the film having the transfer layer is pressed against the substrate by the heater block to transfer the transfer layer. The heater block further includes a convex portion corresponding to the opening,
The defect inspection apparatus according to claim 11, wherein the film having the transfer layer and the substrate are pressed by the convex portion.   The defect correction apparatus according to claim 9, further comprising a fixing unit that fixes the film provided with the opening. The film having the transfer layer further comprises an absorption layer that absorbs the pulsed laser light,
The defect correction apparatus according to claim 3, wherein the transfer layer is transferred to the substrate by irradiating the absorption layer with pulsed laser light.   The defect correction apparatus according to claim 14, further comprising a separation layer that separates the absorption layer from the transfer layer after the transfer layer is transferred to the substrate, between the absorption layer and the transfer layer.   The defect correction apparatus according to claim 5 or 9, wherein the correction liquid in a portion where the film is removed or a peripheral portion of the opening is removed by irradiating the pulse laser beam. Further comprising jetting means for jetting gas to the film or the film having the transfer layer,
The defect correction apparatus according to claim 1, wherein the film or the film having the transfer layer is brought close to the substrate by the ejection unit. Further comprising a beam shaping mechanism for shaping pulse laser light from the pulse laser light source,
The defect correction apparatus according to claim 1, wherein the film or the film having the transfer layer is irradiated with pulsed laser light formed by the beam shaping mechanism. The light source for observation which irradiates light to the said board | substrate on the substantially the same axis | shaft as the pulse laser beam from the said pulsed laser light source, The detection means which detects the light from the said light source for observation irradiated to the said board | substrate is further provided. The defect correction apparatus in any one of thru | or 18. The film having the transfer layer further has a transparent layer that transmits the light of the observation light source,
The defect correction apparatus according to claim 19, further comprising a film reel that feeds out a film having the transfer layer so that a position irradiated with the light is changed from the transparent layer to the transfer layer. A wavelength tunable filter that selects a wavelength of light from the observation light source;
The defect correction apparatus according to claim 19 or 20, wherein the substrate or the transfer layer is heated by light emitted from the wavelength tunable filter. There is a defect correction method for removing defects on a patterned substrate,
Detecting defects on the substrate;
A defect correction method comprising: irradiating a film provided opposite to the substrate with a pulsed laser beam to remove a part of the film and defects substantially simultaneously by laser ablation. Further comprising thinning the film by irradiating the pulsed laser light,
23. The defect correcting method according to claim 22, wherein a part of the film and the defect are removed substantially simultaneously by laser ablation by irradiating the thinned part with pulsed laser light. Changing the film to a film having a transfer layer transferred to the substrate;
The defect correction method according to claim 22, further comprising a step of transferring the transfer layer to the substrate by irradiating a pulse laser beam onto the film having the transfer layer. Attaching a correction liquid according to a pattern to be corrected to the substrate from a portion where the film is removed;
The defect correction method according to claim 22, further comprising a step of removing the film from the substrate. A defect correction method for correcting a defect by transferring a pattern to a defective portion of a patterned substrate,
Detecting defects on the substrate;
Bringing a film having a transfer layer transferred to the substrate close to a surface facing the substrate;
Irradiating the film with pulsed laser light to transfer the transfer layer to the substrate. A defect correction method for correcting defects in a patterned substrate,
Detecting defects on the substrate;
Facing the film to the substrate;
Irradiating the film with pulsed laser light to provide an opening;
Attaching a correction liquid according to a pattern to be corrected to a defective portion of the substrate through the opening; and
Removing the film from the substrate. A defect correction method for correcting defects in a patterned substrate,
Detecting defects on the substrate;
Facing the film to the substrate;
Irradiating the film with pulsed laser light to provide an opening;
Providing a film having a transfer layer at the position of the opening;
A defect correction method comprising a step of transferring the transfer layer to a substrate through the opening. Further comprising the step of removing the film around the opening and providing an air removal unit for removing air between the substrate and the film having the transfer layer;
29. The defect correcting method according to claim 27 or 28, wherein a film having the transfer layer is provided at the position of the opening and the air removing unit.   30. The defect correction method according to claim 22, wherein a gas is jetted onto the film or the film having the transfer layer so as to be close to the substrate. Forming a pattern on the substrate;
Detecting defects on the substrate;
A pattern substrate manufacturing method comprising: irradiating a film provided opposite to the substrate with pulsed laser light to remove a part of the film and the defects substantially simultaneously by laser ablation. Changing the film to a film having a transfer layer transferred to the substrate;
32. The pattern substrate manufacturing method according to claim 31, further comprising: irradiating a film having the transfer layer with pulsed laser light to transfer the transfer layer to the substrate. Attaching a correction liquid according to a pattern to be corrected to the substrate from a portion where the film is removed;
32. The pattern substrate manufacturing method according to claim 31, further comprising a step of removing the film from the substrate. A pattern substrate manufacturing method for forming a pattern by transferring a pattern to a defective portion of a patterned substrate,
Forming a pattern on the substrate; detecting a defect on the substrate on which the pattern is formed; and
Bringing a film having a transfer layer transferred to the substrate close to a surface facing the substrate;
Irradiating the film with pulsed laser light, and transferring the transfer layer to a defective portion of the substrate. A pattern substrate manufacturing method for manufacturing a patterned substrate,
Forming a pattern on the substrate, detecting defects on the substrate,
Facing the film to the substrate;
Irradiating the film with pulsed laser light to provide an opening;
Attaching a correction liquid according to a pattern to be corrected to a defective portion of the substrate through the opening; and
Removing the film from the substrate. A pattern substrate manufacturing method for manufacturing a patterned substrate,
Forming a pattern on the substrate, detecting defects on the substrate,
Facing the film to the substrate;
Irradiating the film with pulsed laser light to provide an opening;
Providing a film having a transfer layer at the position of the opening;
A pattern substrate manufacturing method comprising: transferring the transfer layer to the substrate through the opening; and removing the film from the substrate. Further comprising the step of removing the film around the opening to provide an air removal portion;
37. The pattern substrate manufacturing method according to claim 35 or 36, wherein a film having a transfer layer is provided at the position of the opening and the air removing unit. 38. The pattern substrate manufacturing method according to claim 31, wherein a gas is jetted onto the film or the film having the transfer layer so as to be close to the substrate.

Images