TWI421916B - A pattern correction method and a pattern correction device - Google Patents

Description

Pattern correction method and pattern correction device

The present invention relates to a pattern correction method and a pattern correction device, and more particularly to a pattern correction method and a pattern correction device for correcting a defective portion of a fine pattern formed on a substrate. More specifically, the present invention relates to an electrode disconnection defect portion (breaking defect portion) generated in a manufacturing process of a flat panel display, for example, a wire break defect portion of a TFT (Thin Film Transistor) substrate. Pattern correction method and pattern correction device.

In recent years, with the increase in size and definition of flat panel displays such as plasma displays, liquid crystal displays, and EL displays, there is a high possibility that defects are formed on electrodes or liquid crystal color filters formed on glass substrates. A defect correction method for improving yield.

For example, an electrode is formed on the surface of a glass substrate of a liquid crystal display. When the electrode is broken, a conductive correction paste (correction liquid) adhering to the tip of the application needle is applied to the disconnection portion, and the application position is moved in the longitudinal direction of the electrode to apply a plurality of corrections to correct the electrode (for example, See Patent Document 1).

Further, there is a method in which a film is provided to cover a defect portion, a defect portion and a film are simultaneously removed by using laser light, and a correction ink (correction liquid) is applied as a mask to the removed portion, and then the film is peeled off. (See, for example, Patent Documents 2 and 3).

In addition, there is a method of correcting the deposition of metal in the wire breakage portion of the electrode by a laser CVD (Chemical Vapor Deposition) method (see, for example, Patent Document 4). Further, there is a method of applying a correction paste to a wire breakage defect portion of an electrode using a micro-distributor (for example, see Patent Documents 5 and 6).

Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Publication No. 2003-215640 Patent Document 6: JP-A-2006-202828

However, in the method of using the correction electrode for applying the needle, since the conductive correction paste is attached to the tip of the coating needle and the correction paste is transferred to the broken portion, the coating diameter depends on the size of the flat surface of the tip of the coating needle. It is difficult to achieve a coating diameter of about 10 μm, and it is also difficult to use it to form a thin line.

On the other hand, in the method using the film as a mask, the broken portion of the electrode or the like can be corrected by a thin wire of about 10 μm, but high laser energy is required because the film and the defective portion are removed by laser light at about the same time. And causing damage at the periphery of the defective portion. Further, since the laser light is opened to adhere to the film of the defective portion, it is conceivable that the waste generated at this time intrudes into the gap between the film and the substrate, and contaminates the vicinity of the defective portion. Further, when the correction paste is applied to the hole in a state where the film and the substrate are closely adhered, the correction paste is diffused and diffused due to the capillary phenomenon in the gap between the film and the substrate, and the substrate is contaminated.

Further, in the defect correction method using the laser CVD method, a plurality of kinds of material gases are supplied to the partial space including the wire breakage defect portion, so that the discharge device is required, and the device configuration is complicated.

Further, in the method of applying the correction paste to the wire breakage portion using the micro-distributor, it is difficult to control the compressed air supplied to the micro-distributor, and the wire breakage defect of the line which is thinner than 10 μm of the gate line of the TFT substrate is corrected. In the case of the department, it is conceivable that the correction paste protrudes from the line width. Further, since the configuration of the micro-dispenser is such that the tip end is hollow and thin, the correction paste is easily clogged, and in order to prevent clogging, it is necessary to use a correction paste which is controlled at a low viscosity.

Therefore, a main object of the present invention is to provide a pattern correction method and a pattern correction device capable of correcting an electrode disconnection portion or the like of about 10 μm and having a small contamination around the defect portion.

The pattern correction method of the present invention corrects a defective portion of a fine pattern formed on a substrate, and includes a first step of irradiating a laser onto the film to form a mask pattern for correcting the defective portion. The reticle pattern includes an opening formed on a surface of the film on the incident side of the laser light and having a shape corresponding to the defect portion, and at least one through hole communicating with the opening portion. The pattern correction method further includes a second step of separating the opening portion of the reticle pattern and the defect portion with respect to a certain gap by a specific slit; and in the third step, pushing the film in a specific range including the opening portion To the substrate, the correction liquid is applied to the defect portion through the mask pattern; and in the fourth step, the film is peeled off from the substrate by the restoring force of the film.

Preferably, the mask pattern is formed by one of the through holes. The through hole is formed by irradiating laser light onto the surface of the film. The opening is an opening on the surface side of the film of the through hole. The through hole has a tapered cross-sectional shape that is tapered from the front surface side to the inner surface side of the film.

Further, it is preferable that the opening portion on the inner surface side of the film of the through hole is widened by irradiating the laser light from the inner surface side of the film.

Further preferably, the mask pattern includes: a groove having the opening corresponding to the shape of the defective portion, and the at least one through hole formed at a bottom of the groove.

Further preferably, the mask pattern includes: a first groove formed by irradiating the laser light on a surface of the film, the opening portion having a shape corresponding to the defect portion; and the second portion The groove is formed by irradiating the laser light on the inner surface of the film, and at least a portion overlaps the first groove vertically. The through hole is formed in the overlapping portion of the first and second grooves by making the sum of the depths of the first and second grooves larger than the thickness of the film.

It is also preferable that the first and second grooves intersect each other.

It is also preferable to provide a plurality of the second grooves.

Preferably, the mask pattern further comprises: a periphery of the opening portion for preventing the correction fluid from entering the groove between the film and the substrate due to capillary phenomenon in the third step.

Further preferably, the reticle pattern further comprises: a concave portion formed on a surface of the film, the opening portion being formed on a bottom surface of the concave portion, and in the second step, contacting a surface of the film with a surface of the substrate And the opening portion and the defect portion are separated from each other by the specific slit.

Further preferably, the film includes first and second films which are vertically overlapped. When the correction liquid is applied to the defective portion through the mask pattern, the correction liquid is sucked into the gap between the first and second films by capillary action.

Further, it is preferable that the first and second films are folded back by one film.

In this third step, the correction liquid is adhered to the tip end surface of the coating needle, the tip end surface of the coating needle is pushed to the specific range, and the correction liquid is applied to the correction mask through the mask pattern. The defect. Corresponding to the contact of the film with the substrate, the coating needle is retracted upward, and the film is peeled off from the substrate by the restoring force of the film.

Further, it is preferable that the defective portion of the fine pattern formed on the substrate is a broken line defect portion of the wiring formed on the TFT substrate.

Further, it is preferable that a hardening treatment or a metal deposition treatment is applied to the correction layer formed of the correction liquid applied to the broken defect portion to ensure conductivity of the correction layer.

Further, it is preferable that the opening portion of the mask pattern has a shape connecting the two end portions of the line on both sides of the disconnection defect portion.

Further preferably, the TFT substrate includes a first line and a second line provided above the first line by an insulating layer. A short-circuit defect portion is formed at the intersection of the first and second lines. The disconnection defect portion is formed by cutting the second line on both sides of the short defect portion. The opening of the mask pattern has a shape in which the short defect portion is twisted back and connected between the two end portions of the cut second line.

Furthermore, the pattern correction device of the present invention corrects a defective portion of a fine pattern formed on a substrate, and includes a laser irradiation device that irradiates a laser light onto the film to form a mask pattern for correcting the defective portion. The reticle pattern includes an opening formed on a surface of the film on the incident side of the laser light and having a shape corresponding to the defect portion, and at least one through hole communicating with the opening portion. The pattern correction device further includes a position determining device that separates the opening portion of the mask pattern from the defect portion by a specific slit; and the coating device pushes the film to a specific range including the opening portion The substrate is simultaneously applied to the defective portion through the mask pattern, and the film is peeled off from the substrate by the restoring force of the film.

In the pattern correction method and the pattern correction device of the present invention, a laser is irradiated onto the film to form a mask pattern, and the opening portion of the mask pattern and the defect portion are separated from each other by a specific slit, and the opening portion is included In a specific range, the film is pressed against the substrate, and a correction liquid is applied to the defect portion through the mask pattern, and the film is peeled off from the substrate by the restoring force of the film. The mask pattern includes an opening formed on a surface of the film on the incident side of the laser light and having an opening corresponding to the shape of the defect portion, and at least one through hole communicating with the opening portion. Therefore, since the film having the opening is used as the mask, the wire breakage portion and the like can be corrected with a thin wire of about 10 μm. Further, since the correction liquid flows out of the gap between the film and the substrate due to the capillary phenomenon, the film is peeled off from the substrate by the restoring force of the film, so that contamination around the defect portion can be suppressed. Further, since the cross section of the mask pattern formed by the laser irradiation is tapered, the opening of the mask pattern is located on the lower side and is in contact with the substrate, so that the correction liquid can be attracted to the capillary phenomenon. Above the reticle pattern. Therefore, it is possible to suppress the correction liquid from flowing between the film and the substrate due to the capillary phenomenon, and the contamination around the defect portion is contaminated by the correction liquid.

In the pattern correction method of the present invention, the fine range of the film including the through hole is pushed out from the upper side of the through hole by the coating needle of the correction paste adhered to the flat portion of the tip end in a state where the film is not aligned with the defect portion. In the pressure, the fine range of the film including the through hole is in contact with the substrate, and the correction paste is adhered to the defective portion through the through hole. The film including the through-holes in a small range is in contact with the substrate only during the period in which the coating needle is pressed, and is controlled to retract the coating needle from the film to the upper side before the correction paste flows to the gap between the film and the substrate due to the capillary phenomenon. When the coating needle leaves the film, the film returns to the original state, the through hole is separated from the defective portion, and a pattern having substantially the same shape as the through hole is drawn on the defective portion.

The through-hole of the film is formed by performing laser ablation by focusing the focus of the laser light on the surface of the film. The cross-sectional shape of the through hole is a tapered shape that is closer to the inner surface of the film (the laser penetration surface).

When the film surface (the laser irradiation surface) having a large area of the opening of the through hole is opposed to the surface of the substrate, the inner surface of the film having the small opening portion of the through hole is placed on the upper surface, and the correction paste is supplied from the inner surface side of the film. . In this case, the cross-section of the through-hole is as thin as an "eight" shape as it goes upward, so that the capillary is trapped in the correction paste in the through-hole, and the end becomes thinner, that is, The upper side of the through hole. Therefore, the correction paste is suppressed from flowing into the gap between the film and the substrate, and as a result, the stability of the drawing shape can be achieved.

On the other hand, when the inner surface of the film (the laser penetration surface) and the substrate are opposed to each other, the cross section of the through hole is an anti-eight-shaped shape (mortar shape), and the correction paste in the through-hole is formed by capillary action. The attraction is generated toward one side of the through hole and the substrate, that is, the substrate side. Therefore, when the periphery of the through hole is in contact with the substrate (defective portion), the correction paste is more likely to flow into the slit. As a result, the supply amount of the correction paste is increased, the drawing shape is enlarged, and the protruding portion tends to become large, and the shape is changed. Not stable. Hereinafter, the pattern correction method of the present invention will be described in detail based on the drawings.

[Implementation type 1]

Fig. 1 is a view showing a pattern correction method according to a first embodiment of the present invention, and Fig. 2 is a view showing a substrate 1 to be corrected. Referring to FIGS. 1 and 2, in the pattern correction method, a film 3 having a through hole 3a is disposed above the substrate 1. On the surface of the substrate 1, an electrode 2 having a fine pattern is formed, and a broken portion (broken portion) 2a is formed in the electrode 2. In a state where the position of the through hole 3a is aligned with the defective portion 2a, the film 3 and the substrate 1 are arranged apart by the specific slit G. The film 3 is, for example, a film of a polyimide film having a width sufficient to use a width as a mask, and for example, a roll film having a slit of about 5 mm to 15 mm is used. The thickness Ft of the film 3 is preferably such that it can be seen below, for example, to the extent of 10 to 25 μm.

The opening of the through hole 3a is, for example, a rectangular shape, and the through hole 3a is formed longer than the defect portion 2a so that the correction paste can be applied to the normal electrode surface 2b located at both ends of the defect portion 2a. Thereby, it is expected that the electric resistance of the electrode 2 after correction can be reduced and the adhesion of the correction portion can be improved.

The through hole 3a is formed by irradiation with laser light. The laser uses a YAG 3rd high power laser or a YAG 4th high power laser, or a pulsed laser such as an excimer. As shown in the third (a) and (b), the laser unit 4 is fixed to the upper portion of the observation optical system 5, and the laser light emitted from the laser unit 4 is transmitted through the objective lens 6 fixed to the lower portion of the observation optical system 5. On the membrane 3. The through hole 3a is processed into a shape of a variable slit (not shown) built in the laser portion 4, and is processed into a size of a spot that is collected by the objective lens 6.

As described above, in order to face the surface of the film 3 (the laser irradiation surface) 3b and the substrate 1, it is necessary to repose the surface and the inner surface of the film 3 after the through hole 3a is formed by the laser portion 4. Therefore, the film 3 is folded back and forth by the fixed rollers 7 and 8 disposed on the right and left, and the fixed roller 9 disposed above and below, and pulled up and down in parallel. In the 3rd (a) figure, the laser beam is irradiated on the surface 3b of the film 3 between the fixed drums 8, 9, to form the through-hole 3a. At this time, in order to prevent the waste generated by the laser ablation from falling onto the substrate 1, the shielding plate 10 may be inserted between the films 3 which are pulled up and down in parallel.

The film 3 is supplied from a film supply reel not shown, and is recovered via a fixed roll 9, 8, 7 by a film take-up reel not shown. These are the main components of the film supply unit not shown, and can be moved in the XYZ direction by the XYZ platform not shown. The XYZ stage is used for position adjustment of the defective portion 2a and the through hole 3a. Moreover, it is also possible to provide a turning device in the film supply unit.

Further, in the third (a) diagram, the film 3 is folded back to the left and right, and when the hole 3a is opened in the upper film 3, the film 3 is also present under a certain distance therebetween. Therefore, the film 3 below is used as the shielding plate 10. In the case of an alternative, the shielding plate 10 can also be omitted.

When the through hole 3a is formed, the waste generated at the time of laser ablation is scattered on the surface 3b of the film 3. In order to remove the waste, it is also possible to irradiate with a low-energy laser in a wide range around the through hole 3a. At this time, the laser is switched to the YAG second high-frequency laser, and if the laser light is irradiated to the wide range centering on the through hole 3a with the weak laser energy, only the waste can be removed and the new waste can be prevented. produce. The laser unit 4 can be used, and can selectively emit either one of laser light for opening the through hole 3a and two kinds of laser light for removing the laser light of the waste.

In this way, the film 3 is not attached to the defect portion 2a, or the through hole 3a is processed by the laser light in a state of being in close contact with each other. Therefore, the electrode 2 or the vicinity of the defect portion 2a is not damaged by the laser light. . Further, since the through hole 3a is opened in a state in which the film 3 is placed in a floating state, it is possible to suppress the adhesion of waste particles to the inner surface of the film 3.

Then, as shown in Fig. 3(b), the film 3 is taken up in the R direction (clockwise direction) in the figure, and the film 3 is reversed so that the surface 3b of the film 3 faces downward. Then, according to the image processing result, the film 3 is relatively moved with respect to the substrate 1, and the position of the through hole 3a is aligned with the defective portion 2a so that the film 3 and the substrate 1 face each other. This program can also be executed manually. The film 3 is in a state of being developed with a certain tension. The slit G varies depending on the interval of the fulcrum of the support film 3 (for example, the fixed rollers 7, 8) or the thickness of the film 3, and is set, for example, to a spectrum of 10 to 1000 μm. When the surface of the substrate 1 has a concavo-convex shape, the slit 3 of the film 3 of the substrate 1 can be kept in contact with the substrate 1, and the gap G including the through hole 3a can be kept in contact with the gap G in which the defective portion 2a does not contact. For example, the slit G is set to 200 μm. Thereafter, the correction paste is applied from above the through hole 3a.

For the coating device of the correction paste 12, for example, the coating needle 11 shown in Fig. 4 can be used. The tip end portion of the coating needle 11 is pointed, but the tip end thereof is processed to be flat. The diameter of the flat surface 11a of the tip end of the coating needle 11 is, for example, a spectrum of 30 to 100 μm, and a diameter suitable for the size of the through hole 3a is selected. It is preferable to select and use the coating needle 11 such that the through hole 3a is completely covered by the flat surface 11a. When such a coating needle 11 is used, the correction paste 12 can be filled in the entire through hole 3a by one application operation.

In a state where the correction paste 12 is attached to the periphery of the tip flat surface 11a of the coating needle 11, the coating needle 11 is pressed from above so that the opening portion of the through hole 3a is closed with the flat surface 11a, and the film 3 is deformed and the periphery of the hole 3a is covered. The film 3 of a small range adheres to the periphery of the defect portion 2a, and the correction paste 12 is filled in the defect portion 2a. The coating needle 11 can be advanced and retracted up and down in a catheter (linear motion bearing) not shown, and the membrane 3 is pressed by the weight of the movable portion itself including the coating needle 11. Even if the coating needle 11 is lowered after the contact film 3 is lowered, the coating needle 11 is retracted upward along the catheter, and therefore, the flat surface 11a of the coating needle 11 is not excessively loaded. It is time-managed and controlled by the driving device (not shown) of the coating needle 11 and the control device (not shown).

The time period in which the film 3 including the minute range of the through hole 3a is in contact with the periphery of the defect portion 2a is only the time during which the coating needle 11 presses the film 3, and the correction paste 12 flows to the film 3 and the defective portion 2a of the substrate 1 due to the capillary phenomenon. Before the vicinity, the coating needle 11 is retracted to the upper side. When the coating needle l1 is separated from the film 3, the elasticity of the film 3 is restored to the original state, and the film 3 including the minute range of the through hole 3a is separated from the periphery of the defect portion 2a. Therefore, the time during which the film 3 is in contact with the substrate 1 is very short.

Fig. 5 shows a state in which the coating needle 11 is retracted to the upper side. The film 3 is returned to the state of being separated from the substrate 1, and the correction layer 12A having the same shape as that of the through hole 3a remains in the defective portion 2a. Moreover, the multi-coated correction paste 12 remains on the surface of the film 3. As described above, since the film 3 is used as the mask, the correction layer 12A (pattern) having a finer coating shape can be obtained by the coating needle 11.

The correction layer 12A is subjected to ultraviolet curing, heat curing treatment, or drying treatment in accordance with the type of the correction paste 12. The hardening treatment may be performed in the state of Fig. 5, and the film 3 may be removed from the upper side of the defective portion 2a, and then the hardening treatment may be performed.

Here, as shown in the third (a) and (b), the reason for inverting the inner surface of the film 3 will be described. When the laser beam is irradiated onto the surface 3b of the film 3 to form the through hole 3a, the cross-sectional shape of the through hole 3a is closer to the inner surface (the laser penetration surface) of the film 3 as shown in Fig. 6(a). The thinner the tip of the tip. This is a feature of laser processing.

In this case, as shown in Fig. 6(a), when the inner surface 3c of the film 3 and the surface of the substrate 1 are opposed to each other, the cross-sectional shape of the through hole 3a is a mortar shape (anti-eight-shaped). In this case, as shown in Fig. 6(b), when the film 3 is pressed against the substrate 1 by the coating needle 11, and the through hole 3a and the defect portion 2a are brought into contact with each other, the capillary phenomenon is caused to flow into the through hole 3a. The correction paste 12 generates an attractive force toward the direction in which the through hole 3a and the substrate 1 face each other (that is, on the side of the substrate 1). Therefore, the correction paste 12 is more likely to flow between the gaps between the substrate 1 and the film 3. When the viscosity of the correction paste 12 is low, the shape of the drawing is enlarged, and the protruding portion tends to increase.

Here, as shown in Fig. 7(a), when the surface 3b of the film 3 and the substrate 1 are opposed to each other, the drawing shape can be suppressed from being swollen, and the stability can be ensured. The area of the opening of the through hole 3a on the surface 3b side of the film 3 is larger than the area of the through hole 3a on the inner surface 3c side of the film 3, and the surface 3b of the film 3 faces the substrate 1. In this state, as shown in Fig. 7(b), when the correction paste 12 is supplied to the through hole 3a, on the side having a narrow cross section, that is, on the inner surface 3c side of the film 3, by capillary action The attraction force acts on the correction paste 12, and the correction paste 12 is easily maintained above. Therefore, the correction paste 12 is suppressed from flowing to the gap between the film 3 and the substrate 1, and as a result, the drawing shape is stabilized.

That is, the correction paste 12 which exerts the force of the capillary phenomenon on the through hole 3a above the tip end of the hole 3a is combined with the force applied to the upper side of the correction paste 12 and the weight of the correction paste 12 itself, and the correction paste 12 becomes the center. The shape in which the end surface on the surface 3b side of the swelled film 3 does not contact. Thereby, it is possible to suppress the gap between the correction paste 12 being sucked into the film 3 and the substrate 1.

When the correction of the defective portion 2a is performed by such a method, the applied correction paste 12 is not sucked into the gap between the substrate 1 and the film 3 by the capillary phenomenon, and there is no need to worry that the substrate 1 is contaminated in a range wider than the through hole 3a. . Further, at the end of the coating, the film 3 completely leaves the defective portion 2a or the substrate 1. Therefore, when the film 3 is removed in the subsequent process, there is no fear that the film 3 and the correction layer 12A are in contact with each other to damage the correction layer 12A.

The larger the viscosity of the correction paste 12 is, the lower the possibility of being sucked into the gap between the substrate 1 and the film 3 due to the capillary phenomenon, but conversely, it is presumed that the fluidity is deteriorated and the entire penetration cannot be entered. The hole 3a is provided, and the correction paste 12 is not attached to the defective portion 2a. On the other hand, in the present invention, since the film 3 in the vicinity of the through hole 3a is pressed against the substrate 1 only at the time of application, the influence of the capillary phenomenon can be minimized. Therefore, it is no problem that the viscosity of the correction paste 12 is small.

Further, when one defective portion 2a is corrected, it is preferable to perform correction by one application. The reason for this is that the larger the number of application times, the larger the amount of the correction paste 12 adhering to the through hole 3a, and the possibility that the correction paste 12 is sucked into the gap between the film 3 and the substrate 1 or the shape of the correction layer 12A is damaged. Sex. On the other hand, when the coating is applied at the same position a plurality of times, the film thickness of the correction layer 12A may be increased. Therefore, the number of coatings is determined in accordance with the type of the correction paste 12 to be used.

Further, in the correction paste 12, in the case of correcting the defective portion 2a of the electrode 2, a metal nano-paste using a metal nanoparticle such as gold or silver or a metal complex solution (for example, a palladium complex solution), a metal gel can be used. body.

Hereinafter, various modifications of the first embodiment will be described. In the modification of Fig. 8, when the through hole 3a is formed by laser irradiation, the partition 3e is left around the through hole 3a to form the groove 3d. When the film 3 is used as a mask, even if the correction paste 12 invades the periphery of the through hole 3a due to capillary action, the intrusion of the correction paste 12 can be prevented by the groove 3d, and the range in which the correction paste 12 invades can be limited to the partition 3e. The scope.

Further, in the modification of Fig. 9, a concave portion 3f having a specific depth D is formed on the front surface 3b of the film 3, a through hole 3a is formed in the approximate center of the concave portion 3f, and a groove surrounding the through hole 3a is formed in the bottom surface of the concave portion 3f. 3d. The width W or the depth D of the concave portion 3f is set such that the film 3 is deformed at the time of application, and the film 3 including the fine range of the through hole 3a can be adhered to the defect portion 2a. For example, in the case of the film 3 having a thickness of 12.5 μm, the width W is from 100 μm to 300 μm, and the depth D is from 1 μm to 5 μm. The recess 3b can be processed in advance on the film 3, and the processing device uses a laser or a mechanical device (for example, mold transfer or the like). Further, the concave portion 3b may be continuously formed in the extending direction of the film 3 or may be formed intermittently.

When the correction paste 12 is applied, the surface 3b of the film 3 is brought into contact with the surface of the substrate 1, and the position of the through hole 3a is determined above the defect portion 2a. Thereby, a specific slit D can be formed between the surface of the substrate 1 and the bottom surface of the recess 3f. Then, as shown in Fig. 4, the through hole 3a is covered from the inner surface 3c side of the film 3 by the flat surface 11a of the tip of the coating needle 11 to which the correction paste 12 is attached, and the film 3 is pressed against the substrate 1 and passed through the through hole. 3a applies the correction paste 12 to the defective portion 2a. In this modification, in addition to the same effect as the modification of Fig. 8, the film 3 can be easily placed between the defective portion 2a and the through hole 3a by merely placing the film 3 on the surface of the substrate 1. Gap.

Further, in the modification of Fig. 10, the film 3B placed on the upper side and the film 3A folded back and developed thereon are twisted and arranged without being overlapped. In this case, the fixed rollers 7 and 8 are not parallel, but for example, the fixed drum 8 is maintained at an angle, and the fixed drum 8 is not rotated. Thereby, a portion where the film 3B is not present can be present above the film 3A, and therefore, interference with the coating device can be easily avoided. After the through hole 3a is processed at the position of the film 3B, the film 3 is wound up and moved to the position of the film 3A. Since the folded portion of the film 3 is twisted, the through hole 3a is rotated. The rotation of the through hole 3a is corrected by correcting the machining direction of the through hole 3a or by rotating the film supply unit.

In the case of the mechanism of Fig. 10, the through hole 3a is formed to be reversed, and after moving to the position of the film 3A, a slit smaller than the slit shape when the through hole 3a is opened is set, for example, As shown in Fig. 11, the laser beam is irradiated from the inner surface 3c side of the film 3 to form the opening 3g on the inner surface 3c side of the film 3. The opening portion 3g of the through hole 3a may have a burr or a shape which may be distorted. In addition, when the through hole 3a having a narrow width is opened, the opening 3g may become several μm or less, and some portions may not be completely penetrated. At this time, by forming the opening 3g, the flow of the correction paste 12 supplied from the coating needle 11 can be made good.

Further, in the first embodiment, the description will be made on the state of correcting the linear defect portion 2a, but even the L shape or It is needless to say that the defect portion having a shape other than the linear shape such as a glyph can be corrected by opening the hole 3a corresponding to the shape of the defect portion on the film 3.

In the case where the opening of the through hole 3a is a rectangle having a short axis length (width) of Sw and a long axis length (length) of S1, the short axis length Sw and the thickness Ft of the film 3 satisfy Ft>Sw. In the relationship, the force (adhesion) F1 that leaves the correction paste 12 in the hole 3a in the through hole 3a is larger than the suction force F2 caused by the capillary phenomenon acting on the gap between the film 3 and the substrate 1. It is possible to prevent the correction paste 12 from being sucked into the gap between the substrate 1 and the film 3. However, since F1 and F2 change with the surface tension or viscosity of the correction paste 12 and the wettability of the substrate 1 or the film 3, in order to increase the stability of the correction, the relationship of Ft/2>Sw is satisfied. good. These formulas of Ft>Sw, Ft/2>Sw are also applicable to the shape of the through hole 3a being L-shaped or Glyph.

[Implementation 2]

Fig. 12(a) is a plan view showing an important part of the TFT substrate 21 to be corrected of the pattern correction method according to the second embodiment of the present invention, and Fig. 12(b) is a cross-sectional view taken along line XIIB-XIIB of Fig. 12(a). . The TFT substrate 21 has a glass substrate 22 in the 12th (a) and (b) drawings. On the surface of the glass substrate 22, a gate line 23 extending in the left-right direction in the drawing is formed, and a gate electrode 23a protruding in the downward direction in the drawing is formed at a specific position of the gate line 23. The gate insulating film 24 is covered on the surface of the gate line 23 and the gate electrode 23a, and the gate insulating film 25 is covered on the surfaces of the gate insulating film 24 and the glass substrate 22.

On the surface of the gate insulating film 25, a matrix of plural pixel electrodes 26 is formed. A gate line 23 is disposed in a region between two pixel electrodes 26 adjacent in the vertical direction in the drawing. The semiconductor film 27 is formed through the gate insulating films 24 and 25 above the gate electrode 23a. A region between the two pixel electrodes 26 adjacent in the left-right direction in the drawing forms a meandering line 28 extending in the vertical direction in the drawing, and a predetermined position in the left direction of the drawing is formed at a specific position of the twisted line 28. Electrode 28a. The end of the tantalum electrode 28a extends to the surface of one end portion of the semiconductor film 27. Further, the source electrode 29 is formed from the surface of the other end portion of the semiconductor film 27 to the surface of one end portion of the pixel electrode 26.

In this manner, the TFT 30 including the gate electrode 23a, the drain electrode 28a, the source electrode 29, and the semiconductor film 27 is formed. The entire surface of the protective film 31 and the alignment film (not shown) is covered to complete the TFT substrate 21. The liquid crystal panel is constituted by the TFT substrate 21, the liquid crystal, and the color filter.

Here, as shown in Fig. 12(a), the broken line portion 28b is present in the twist line 28. When the broken defect portion 28b is corrected after the formation of the protective film 31, a part of the protective film 31 is removed by laser processing to expose the broken defect portion 28b, and the correction paste is applied, and the hardening film forming process is performed to secure the flaw. After the wire 28 is turned on, the protective film 31 must be formed again at the correction position. Therefore, in order to simplify the procedure of the correction, it is preferable to perform the correction of the disconnection defect portion 28b in the program before the formation of the protective film 31. For example, when the formation of the twist line 28 is completed, there is no protective film 31, and at this time, the disconnection correction is performed.

Fig. 13 is a view showing a defect correction method of the second embodiment. In Fig. 13, the correction target is the TFT substrate 21 having no protective film 31, and the film 3 having the holes 3a is used as a mask. In a state where the hole 3a is aligned above the broken defect portion 28b, the film 3 is placed on the TFT substrate 21 with a constant gap G therebetween.

The opening of the hole 3a is, for example, an angular shape of the minor axis length Sw and the major axis length S1, so that the correction paste 12 is also applied to the normal twist line 28 located at both ends of the disconnection defect portion 28b, and the long axis length S1 of the hole 3a It is set to be longer than the broken line defect portion 28b. In this way, when the hole 3a is formed so as to overlap the normal twist line 28, the region where the correction layer and the normal twist line 28 overlap can be secured. Therefore, it is expected that the electric resistance of the correction portion can be lowered, and the adhesion and the like can be improved. .

In the method of forming the hole 3a in the film 3, the method of applying the film 3 having the hole 3a to the TFT substrate 21 and the method of applying the correction paste 12 to the wire breaking defect portion 28b are the same as those in the first embodiment.

The correction layer 12A is subjected to ultraviolet curing or heat curing treatment in accordance with the type of the correction paste 12. The hardening treatment may be performed in the state of Fig. 5. In addition, if it is necessary to deposit a metal film by a thermal decomposition reaction by laser irradiation, the film 3 may be removed from above the wire breakage defect portion 28b, and then subjected to a hardening treatment (metal deposition treatment) by a laser that continuously oscillates. In this case, the structure can be simplified if the type of the laser beam 4 can be switched between the pulse oscillation and the continuous oscillation, but in the case where the switching cannot be performed, the continuous oscillation different from the laser portion 4 can also be shown from the figure. The laser irradiates the laser light through the observation optical system 5.

When the correction of the wire breakage defect portion 28b is performed by such a method, the applied correction paste 12 is not sucked into the gap between the TFT substrate 21 and the film 3 by the capillary phenomenon, and there is no fear that the TFT substrate 21 is wider than the hole 3a. Being polluted. Further, at the end of the coating, the film 3 completely leaves the wire breakage defect portion 28b or the TFT substrate 21. Therefore, when the film 3 is removed in the subsequent process, there is no fear that the film 3 and the correction layer 12A are in contact with each other to damage the correction layer 12A.

Fig. 14 is a plan view showing an important part of the TFT substrate 21 after the wire breakage defect portion 28b is corrected. In Fig. 14, the correction layer 12A formed on the broken defect portion 28b of the twisted wire 28 has a portion overlapping the normal twisted line 28 at both ends thereof.

When there is a wire breakage defect of the foreign material on the twist line 28, the foreign matter is usually removed by laser irradiation, and then the correction paste 12 is applied thereon to be corrected in the same manner as in Fig. 14, but as shown in Fig. 15, Forming a position that bypasses the foreign object 32 The word-shaped correction layer 12B may also be used. In this case, in the case where the correction layer 12B and other lines are short-circuited, it is also possible to avoid the short circuit by laser cutting around the correction layer 12B.

Figure 16 shows the formation A diagram of the method of the word-shaped correction layer 12B. In Fig. 16, formation in film 3 The hole 3h of the word shape separates the film 3 from the TFT substrate 21 by a certain gap G. The method of applying the correction paste 12 is the same as the method shown in Fig. 4.

Further, as shown in Fig. 17, when the twist line 28 and the brake line 23 are short-circuited by the intersection portion 33, the twist line 28 is laser cut (broken line) at two positions on both sides of the brake line 23, and then formed. The word-shaped correction layer 12B bypasses the intersection portion 33. Moreover, if a straight line is formed on the film 3 or A hole of any shape other than the shape of the word can obtain a correction layer of an arbitrary shape by one application operation.

Even in the case of correction using the film 3 having the hole having such a complicated shape, it is preferable to use the coating needle 11 having the flat surface 11a which can cover the entire hole. For example, as shown in Fig. 18, the entire surface of the coating needle 11 is covered with the flat surface 11a. The hole 3h of the word shape is preferred.

[Implementation 3]

19(a) to (d) are views showing a film supply unit 40 of the pattern correction device according to the third embodiment of the present invention. The film supply unit 40 is provided with a detachable film supply reel not shown and a film reel which is not shown. The film 3 supplied from the film supply reel is guided between the objective lens 6 and the TFT substrate 21 by the fixed rollers 41 to 43 as shown in Fig. 19(a), folded back by the fixed roller 44, and guided to the film roll through the fixed roller 45. Take the reel. The fixed rollers 42, 43 are maintained by the movable member 46 so as to be movable up and down within a certain range.

In the 19th (a) diagram, the state in which the movable element 46 is fixed to the upper position is shown. In this state, the film 3 of the section L1 sandwiched by the fixed rollers 42 and 43 and the film 3 of the section L2 sandwiched by the fixed rollers 44 and 45 are separated by a predetermined gap (for example, about 2 mm). . Further, the films 3 of the sections L1 and L2 are also aligned approximately parallel to the TFT substrate 21.

In this state, the film 3 at the approximate center of the section L1 is formed by the laser irradiation to form the first hole 3Ba of the corrected shape of the broken line defect portion 28b. At this time, the film 3 of the section L2 receives the foreign matter generated by the laser ablation, and therefore, the contamination of the TFT substrate 21 by the foreign matter can be prevented. When the formation of the first hole 3Ba is completed, the waste generated at the time of laser ablation is scattered on the laser irradiation surface of the film 3. In order to remove the waste, it is also possible to irradiate with a low-energy laser in a wide range around the first hole 3Ba. At this time, the laser is switched to the YAG second high-frequency laser, and if the laser light is irradiated to the wide range centering on the first hole 3Ba with the weak laser energy, only the foreign matter can be removed and the new foreign matter can be prevented. produce.

Then, as shown in Fig. 19(b), the film 3 is wound up to receive the film take-up reel, and the first hole 3Ba is moved to the center of the section L2. Then, as shown in Fig. 19(c), the movable member 46 is moved to the lower position, the fixed rollers 42, 43 are placed below the fixed rollers 44, 45, and the upper film 3A and the lower portion are disposed in the interval L1. The film 3B overlaps up and down.

After confirming the first hole 3Ba by the observation optical system 4, as shown in Fig. 19(d), in the upper film 3A of the section L1, the second hole 3Aa is opened by laser ablation so that the first hole 3Ba At least a certain range is exposed. Further, the second hole 3Aa penetrates only the upper film 3A and does not penetrate the lower film 3B. In this case, if the number of laser irradiations and the laser energy necessary for the penetrating film 3A are known in advance, the upper surface of the lower film 3B is not deepened. Further, although the first hole 3Ba is opened in the lower film 3B, it is minute, and since the number of times of laser irradiation after the second hole 3Aa is penetrated is set as small as possible, the foreign matter falling under the film 3B can be controlled to be controlled. The smallest.

Further, when the second hole 3Aa is formed, a shielding plate (not shown) may be inserted between the lower film 3B and the TFT substrate 21 to block foreign matter. After the formation of the second hole 3Aa, switching to the YAG second high-frequency laser, the laser light is irradiated with a weak laser energy to a wide range centered on the second hole 3Aa, and the foreign matter on the film 3A is removed. can.

In this manner, since the second hole 3Aa is formed after confirming the position of the first hole 3Ba that is opened first, the positional adjustment of the first hole 3Ba and the second hole 3Aa is not required.

When the formation of the second hole 3Aa is completed, the alignment of the broken defect portion 28b and the first hole 3Ba is performed, and the lower film 3B including the first hole 3Ba and the upper film including the second hole 3Aa are formed. 3A and the TFT substrate 21 face each other with a certain gap G. For example, the gap G is set to 200 μm. Thereafter, as shown in FIG. 4, when the correction paste 12 is applied by using the coating needle 11, the correction can be completed without contaminating the vicinity of the disconnection defect portion 28b.

In the method shown in Figs. 19(a) to (d), the film 3 is folded back by the fixed roller 44, and the upper film 3A and the lower film 3B are placed one on top of the other, so that the tip end portion of the film supply unit 40 can be The height H of the portion of L2 is controlled to be low. For example, when the height H of the tip end portion is about 16 mm, since the action distance (WD18 mm) can be inserted 20 times directly below the objective lens, if the lens rotator is not rotated by the figure, the pair of low magnification is used. When the objective lens 6 is switched to a high magnification, the positional alignment of the high-precision wire breakage defect portion 28b and the first hole 3Ba can be performed.

Here, in the second hole 3Aa, in the form shown in Figs. 20(a) to (c), the viscosity of the correction paste 12 to be used or the wettability of the TFT substrate 21 is considered, or the paste 12 is corrected. The amount of coating is appropriately selected. In the 20th (a) figure, the second hole 3Aa is formed to have a shape which is approximately the same as the first hole 3Ba. In this case, the first hole 3Ba and the second hole 3Aa are not separately opened, and the first hole 3Ba and the second hole 3Aa may be simultaneously formed in a state where the upper film 3A and the lower film 3B are overlapped.

In the 20th (b)th view, the second hole 3Aa larger than the first hole 3Ba is formed, and the first hole 3Ba is completely exposed. Further, in the 20th (c)th view, the second hole 3Aa which is orthogonal to the center of the first hole 3Ba is formed, and only the central portion of the first hole 3Ba is exposed. Only the intersection region 47 of the first hole 3Ba and the second hole 3Aa penetrates both the upper film 3A and the lower film 3B. In this case, when the viscosity of the correction paste 12 is high and it is difficult to flow into the first hole 3Ba, a plurality of second holes 3Aa may be formed.

In the state of the 19th (d), in the state in which the correction paste 12 adheres to the periphery of the flat surface 11a of the tip of the coating needle 11, the coating needle 11 is pushed from above, so that it is flat. 11a covers the opening of the second hole 3Aa. In this case, the coating needle 11 which can cover the entire first hole 3Ba with the flat surface 11a is used. Further, the second hole 3Aa may be formed to be receivable on the flat surface 11a, and the second hole 3Aa may have a size protruding from the flat surface 11a.

When the coating needle 11 presses the films 3A and 3B from the upper side to the lower side, the films 3A and 3B are deformed, and the film 3B in a minute range around the first hole 3Ba adheres to the periphery of the broken defect portion 28b, and the correction paste 12 is filled. The broken defect portion 28b is broken. At this time, the gap between the upper film 3A and the lower film 3B is extremely small, and the correction paste 12 is sucked between the gaps of the upper film 3A and the lower film 3B due to the capillary phenomenon. Therefore, it is possible to suppress the excessive correction paste 12 from flowing into the first hole 3Ba, and it is possible to suppress the expansion of the pattern, and the correction paste 12 is sucked between the lower film 3B and the slit of the TFT substrate 21 to contaminate the TFT substrate 21.

As the wire breakage defect portion 28b is longer, as described above, the coating needle 11 having a large area corresponding to the flat surface 11a must be pressed against the entire first hole 3Ba. In this case, the one-time correction paste 12 is further coated. many. For example, when the diameter of the flat surface 11a is changed from 50 μm to 100 μm, the area of the flat surface 11a becomes larger in proportion to the square of the radius, and the correction paste 12 is applied in an amount exceeding four times. Therefore, more than the required correction paste 12 is fed into the inside of the first hole 3Ba, and it can be estimated that the drawing pattern is swollen. However, the gap between the upper film 3A and the lower film 3B sucks in the excess correction paste 12, so that the amount of liquid of the correction paste 12 can be made appropriate.

In the 22nd (a)th view, the cross-sectional view taken along line XXIIA-XXIIA of the 19th (d) diagram, the configuration of the coating unit 51 in which the correction paste 12 is applied to the broken defect portion 28b. In the 22nd (a) diagram, the broken line defect portion 28b and the films 3A, 3B are opposed to each other with a certain gap, and the broken line defect portion 28b and the hole 3Ba are in a state of being aligned with each other, and the coating unit 51 is inserted into the pair. Immediately below the objective lens 6, it is in a state directly above the broken defect portion 28b. At this time, although the coating unit 51 is inserted below the objective lens 6, it is preferable to switch the objective lens 6 to a low magnification in order to secure the insertion space. For example, 10 times the movement distance WD of the objective lens 6 is about 30 mm, and when the height of the coating unit 51 is designed to be low, it can be easily inserted.

The coating unit 51 has a first hole 52a at the bottom thereof, and includes a container 52 into which the correction paste 12 is injected, a second hole 53a, a lid 53 for sealing the container 52, and a first and second holes 52a. And 53a are approximately the same diameter of the coating needle 11. The flat surface 11a of the tip end of the coating needle 11 penetrates the second hole 53a and is immersed in the correction paste 12. The diameters of the first and second holes 52a and 53a are slightly larger than the diameter of the coating needle 11 penetrating therethrough, but are still small. Therefore, by correcting the surface tension of the paste 12 or the water/oil repellency of the container 52, there is almost no The correction paste 12 is exposed from the first hole 52a.

The hole formed in the container 52 for injecting the correction paste 12 has a tapered shape in which the sectional area is smaller as it is closer to the hole 52a. Therefore, even if the correction paste 12 is small, the flat surface 11a of the coating needle 11 can be immersed therein, which is economical. The amount of the paste 12 is corrected, for example, 20 μl (microlitter). The correction paste 12 is also not preserved, and the container 52 is periodically replaced. Alternatively, after washing the container 52 after use, it may be reused. In order to make the container 52 easy to attach and detach, it is a structure in which the hand is easily grasped, and the method of attaching and detaching by the attraction of the magnet can further improve the usability.

The base end portion of the coating needle 11 is fixed to the coating needle fixing plate 54, and the coating needle fixing plate 54 is supported by a guide (straight moving member) not shown to be movable up and down. In this state, as shown in Fig. 22(b), when the flat surface 11a of the coating needle 11 protrudes from the first hole 52a provided in the bottom of the container 52, the correction paste 12 adheres to the flat surface 11a of the coating needle 11. When the coating needle 11 is lowered and the film 3A is pressed so that the flat surface 11a covers the openings of the holes 3Aa and 3Ba, the films 3A and 3B are deformed, and the film 3B in a small range around the hole 3Ba is attached to the broken defect portion. Around the 28b, the correction paste 12 is filled in the broken defect portion 28b.

The coating needle fixing plate 54 is supported by a guide (directing member) not shown, so as to be movable up and down, and the film 3A, 3B is pressed only by the weight of the movable portion itself including the coating needle 11. Even if the coating needle 11 is lowered to lower the film 3B and the TFT substrate 21, the coating needle 11 is retracted upward along the guide, so that the flat surface 11a of the coating needle 11 is not excessively loaded. It is time-managed and controlled by the driving device (not shown) of the coating needle 11 and the control device (not shown). For example, the time during which the film 3B is in contact with the TFT substrate 21 is 1 second or shorter.

In this coating method, since the procedure of moving the coating needle 11 back and forth between the broken defect portion 28b and the container (ink tank or paste tank) is omitted, the time required for the defect correction is shortened.

Further, the correction paste 12 is placed in a sealed container 52 other than the holes 52a and 53a, and the coating needle 11 is always maintained in an inserted state in which a minute gap is maintained between the hole 53a of the lid 53 of the container 52, and therefore, the correction paste is 12 The area in direct contact with the atmosphere is small. Therefore, it is possible to prevent evaporation of the diluent (solvent) of the correction paste 12, and it is possible to extend the number of days (replacement period) that the correction paste 12 can be used, and to reduce the procedure of the maintenance defect correction device.

In the standby state of the application operation, the flat surface 11a of the application needle 11 is immersed in the correction paste 12, so that the correction paste 12 adhering to the flat surface 11a of the application needle 11 can be prevented from drying, and the application of the coating needle 11 can be omitted. Net procedure.

In this manner, since the coating unit 51 can be downsized, a plurality of coating units 51 having different diameters from the flat surface 11a are prepared in advance, and the coating needle 11 can be selected in accordance with the size of the broken defect portion 28b.

Further, when the laser light is irradiated onto the film 3 to open the hole, the hole has a tapered shape from the tip of the laser irradiation surface (film surface) closer to the through surface (the inner surface of the film). This is a feature of laser processing.

In the foregoing example, the hole 3Ba of the film 3 is formed by laser ablation. After the formation of the hole 3Ba is completed, the laser irradiation surface is opposed to the TFT substrate 21, and the roller 44 is reversed by the fixed roller 44. At this time, the cross-sectional shape of the hole 3Ba is such that the closer the tip is, the thinner the tip is, that is, the figure-eight shape.

In this state, the film 3A, 3B is pushed to the side of the TFT substrate 21 by the coating needle 11, and when the hole 3Ba and the wire breakage defect portion 28b are in contact, the force of the capillary phenomenon acts on the hole 3Ba above the tip of the hole 3Ba. The correction paste 12 in the inside is combined with the force of the correction paste 12 and the weight of the correction paste 12 itself, and the correction paste 12 in the hole 3Ba is in a state of being swelled in the center. Therefore, it is possible to suppress the gap between the correction film 12 being sucked into the film 3 and the TFT substrate 21.

Further, when the laser light forming hole 3Ba is irradiated, as shown in Fig. 23(a), not only the hole 3Ba is formed, but as shown in Fig. 23(b), the partition wall 3Bc may be left around the hole 3Ba to form the groove 3Bb. Further, as shown in Fig. 23(c), the concave portion 3Bd is formed on the surface of the film 3 and the TFT substrate 21 facing each other, the hole 3Ba is formed at the approximate center of the concave portion 3Bd, and the groove 3Bb surrounding the hole 3Ba is formed in the concave portion 3Bd. . The width or depth of the concave portion 3Bd is set such that the film 3 is deformed at the time of application, and the film 3 including the minute range of the hole 3Ba can be adhered to the range of the defective portion 28b. For example, if the film 3 is 12.5 μm thick, the width is from 100 μm to 300 μm, and the depth is from 1 μm to 5 μm. The recess 3Bd can be processed in advance on the film 3, and the processing device uses a laser or a mechanical device (for example, mold transfer or the like). Further, the concave portion 3Bd may be continuously formed in the extending direction of the film 3 or may be formed intermittently.

When the film 3 as shown in Fig. 23(b)(c) is corrected as a mask, even if the hole 3a and the wire breakage defect portion 28b are in contact with each other, the intrusion of the correction paste 12 can be prevented by the groove 3Bb.

[Implementation 4]

Fig. 24(a) is a front view showing the overall configuration of a pattern correction device 60 according to an embodiment 4 of the present invention, and Fig. 24(b) is a cross-sectional view taken along line XXIVB-XXIVB of Fig. 24(a). In the figure 24(a)(b), the hoisting type 61 is provided with a lifting frame type XY stage 62. The XY stage 62 includes an X-axis stage 62a that moves in the left-right direction of FIG. 24(a), and a Y-axis stage 62b that can move in a vertical direction to the paper surface. Further, a Z-axis stage 63 that can move up and down is fixed to the X-axis stage 62a via the fixing table 64. The laser unit 4, the observation optical system 5, the objective lens 6, and the XYZ stage 65 are fixed to the Z-axis stage 63, and the coating unit 51 is mounted on the XYZ stage 65. A chuck 66 is fixed to the fixed plate 61, and the TFT substrate 21 is fixed to the chuck 66.

Further, the XYZ stage 67 is fixed to the fixing table 64 so that the film supply unit 70 can be moved in the XYZ direction. The film supply unit 70 includes, in addition to the configuration shown in the third (a) and (b), a base plate 73 that supports the film supply spool 71 or the film take-up reel 72, and a fixed roller 7 to 9 The movable element 74 and the movable element 74 are maintained by the linear motion bearing 75 so as to be movable in the vertical direction of the base plate 73. Usually, the fixed rollers 8, 9 are not in contact with the TFT substrate 21, but even if the fixed rollers 8, 9 are in contact with the TFT substrate 21, since they are guided by the linear motion bearing 75 and retracted upward, the TFT substrate 21 is not caused. Shock.

The coating unit 51 includes the XYZ stage 65 controlled by the control device, and presses the hole 3a of the film 3 to the disconnection defect portion 28b of the TFT substrate 21 only for a short time. Further, the film supply unit 70 determines the position of the hole 3a by the XYZ stage 67 to the disconnection defect portion 28b directly below the objective lens 6, and drives the disconnection defect portion 28b and the film 3 to face each other across the slit. Further, the film supply unit 70 may of course be replaced with the film supply unit 40 of the 19th (a) to (d).

[Implementation 5]

25(a)(b) is a cross-sectional view showing a pattern correction method according to Embodiment 5 of the present invention, and Fig. 26 is a plan view seen from the top of Fig. 25(a). In this pattern correction method, as shown in Figs. 25(a) and 26, after the film 3 is formed with the groove 3i whose shape corresponds to the shape of the defect portion 2a, the width at the slightly center of the groove 3i is formed at the width of the groove 3i. Hereinafter, the small through hole 3j whose length is shorter than the groove 3i, the opening of the groove 3i is separated from the defect portion 2a by a specific slit. The film 3 is subjected to a certain tension, and the film 3 is disposed in a direction slightly parallel to the substrate 1. The slit can be, for example, a spectrum of 200 μm.

Then, in a state where the correction paste 12 adheres to the periphery of the tip flat surface 11a of the coating needle 11, the coating needle 11 is pressed from above to the lower side, and the through hole 3j and the groove 3i are covered by the flat surface 11a, and the film 3 is deformed. The film 3 in a small range around the groove 3i adheres to the periphery of the defect portion 2a, and the correction paste 12 is filled in the defect portion 2a. At this time, the amount of liquid of the correction paste 12 flowing into the groove 3i is reduced by the small number of the through holes 3j, and the gap between the defective portion 2a and the film 3 can be suppressed from flowing into the correction paste 12.

Further, when the coating needle 11 presses the film 3 including the fine range of the groove 3i from above, the time period in which the film 3 including the minute range of the groove 3i is in contact with the periphery of the defect portion 2a is only the time at which the coating needle 11 presses the film 3 Before the correction paste 12 flows into the gap between the film 3 and the substrate 1 (near the defect portion 2a) due to the capillary phenomenon, the coating needle 11 is retracted upward. When the coating needle 11 is separated from the film 3, the elasticity of the film 3 is restored to the original state, and the film 3 including the minute range of the groove 3i is separated from the defective portion 2a.

When the micro pattern is formed by such a method, even if the correction paste 12 is applied, the correction paste 12 flowing to the defective portion 2a can be reduced. Therefore, the pattern expansion can be suppressed, or the gap between the film 3 and the substrate 1 can be corrected. This causes contamination of the substrate 1.

Further, when the viscosity of the correction paste 12 is high and it is difficult to flow into the groove 3i from the through hole 3j, the through hole 3j can be elongated in the longitudinal direction of the groove 3i.

Further, in this embodiment 5, after the groove 3i is formed in the film 3, the front surface and the back surface of the film 3 are reversed to form the through hole 3j, and since the opening portion of the groove 3i must face the defective portion 2a, A film driving method as shown in Fig. 27(a)(b) can be used.

Fig. 27(a)(b) is a view from above the film 3, and the film 3 supplied from the film supply reel not shown in the figure is reversed and folded back by the fixed roller 76 which cannot be rotated, The displayed film take-up reel is taken up for recycling. The film 3 is twisted so that its upper and lower sides do not overlap each other. The groove 3i is formed on the film 3 located above, and the film 3 is wound up. The laser beam is irradiated onto the film 3 which is reversed by the fixed roller 76 from above the groove 3i to form the through hole 3j.

Further, when the film 3 is reversely twisted, the groove 3i is rotated in parallel with respect to the substrate 1. Therefore, a mechanism for rotating the film 3 in the horizontal direction and facing the groove 3i and the defective portion 2a may be provided. Further, when the slewing mechanism is provided in the slit for determining the shape of the laser processing, and the film 3 is twisted and reversed, the groove 3i and the defective portion 2a are oriented in the same direction, and the groove 3i may be formed to be inclined in advance in the longitudinal direction of the film 3.

Further, the through hole 3j is not used, and a groove slightly intersecting the groove 3i is formed on the back surface of the film 3, so that the depth of the groove on the front and back surfaces is larger than the thickness of the film 3, and the through hole is formed in the intersection of the groove on the front and back surfaces. Also. Further, the through hole 3j may be formed in the bottom of the groove 3i before the film 3 is reversed. Further, a plurality of through holes 3j may be formed.

[Implementation 6]

28(a) to (d) are schematic views showing the configuration and operation of the film supply unit 40 included in the pattern correction device according to the sixth embodiment of the present invention. In the 28th (a) to (d) drawings, the film supply unit 40 is constructed as shown in Figs. 19(a) to (d).

In the 28th (a) diagram, the movable element 46 is in a state of being fixed to the upper position. In this state, the film 3 of the section L1 sandwiched by the fixed rollers 42 and 43 and the film 3 of the section L2 sandwiched by the fixed rollers 44 and 45 are separated by a predetermined gap (for example, about 2 mm). Moreover, it is also approximately parallel to the substrate 1 for the substrate 1. The portion of the section L2 of the film supply unit 40 (the film arrangement portion 40a) is inserted under the objective lens 6 for correction using the film 3 as a mask.

In this state, the laser light is irradiated on the film 3 approximately at the center of the section L1 to form a non-penetrating groove 3Bi having a shape corresponding to the defect portion 2a. When the formation of the groove 3Bi is completed, the debris generated during the laser ablation is scattered on the laser irradiation surface of the film 3. In order to remove the waste, it is also possible to irradiate with a low-energy laser in a wide range around the periphery of the groove 3Bi. At this time, switching to the YAG second high-frequency laser, if the laser light is irradiated to a wide range centering on the groove 3Bi with weak laser energy, it is possible to remove only the waste and prevent the generation of new waste.

Then, as shown in Fig. 28(b), while the film 3 is taken up to the film take-up reel, the groove 3Bi is moved to the approximate center of the section L2. Then, the movable member 46 is moved to the lower side so that the fixed rollers 42, 43 are located further below the fixed rollers 44, 45, as shown in Fig. 28(c), the two films 3 are overlapped in the range of the interval L1. Configuration.

After confirming the groove 3Bi by the observation optical system 5, as shown in Fig. 28(d), in the upper film 3A of the section L1, the through hole 3Aj is opened by laser ablation so as to include at least the region overlapping the groove 3Bi. In this case, not only the film 3A is penetrated, but also the upper surface of the film 3B on which the groove 3Bi is processed is ablated by laser, and a portion of the bottom of the groove 3Bi is penetrated. If the number of laser irradiations and the laser energy required to penetrate a part of the bottom of the hole 3Aj and the groove 3Bi are obtained in advance, the upper surface of the lower film 3B is not excessively cut. Further, a part of the bottom of the groove 3Bi formed in the film 3B is penetrated into a minute region, and since the number of laser irradiations after the portion of the bottom of the groove 3Bi is penetrated is reduced, it is possible to fall on the film 3B. The foreign matter underneath is controlled to a minimum.

Further, when the through hole 3Aj is formed, a shielding plate (not shown) may be inserted between the film 3 and the substrate 1 to block foreign matter. Then, after the through hole 3Aj is formed, the YAG second high-power laser is switched, and the laser light is irradiated to the wide range centering on the through hole 3Aj with the weak laser energy, and the foreign matter on the film 3A may be removed. In this manner, after the position of the groove 3Bi formed first is confirmed, the through hole 3Aj is formed. Therefore, it is preferable to adjust the position of the through hole 3Aj and the groove 3Bi.

Fig. 29 is a plan view of the film 3A of Fig. 28(d) viewed from above. In Fig. 29, the strip-shaped groove 3Bi and the through hole 3Aj are formed to overlap each other. The through hole 3Aj is formed at approximately the center of the groove 3Bi, and is smaller than the area of the groove 3Bi, and does not protrude from the groove 3Bi. When the through hole 3Aj is formed, the upper surface of the film 3B underneath is ablated by laser, and a part of the bottom of the groove 3Bi is penetrated.

Returning to Figs. 28(a) to (d), in the pattern correction method, the film 3 is folded back on the fixed roller 44, and the upper film 3A and the lower film 3B are placed one on top of the other, so that the film of the film supply unit 12 can be used. The height H of the arrangement portion 12a is controlled to be low. For example, when the height H of the film arrangement portion 12a is about 16 mm, the film arrangement portion 12a can be inserted directly under the objective lens 20 times the operation distance (WD18 mm), so that the positions of the defect portion 2a and the groove 3Ba can be precisely performed. alignment.

When the formation of the groove 3Bi and the through hole 3Aj is completed, the alignment of the opening portion of the defect portion 2a and the groove 3Bi is performed, and the lower film 3B including the groove 3Bi and the substrate 1 are opposed to each other with a constant gap G. After that, when the coating needle 11 having the flat surface 11a covering the entire groove 3Bi is used and the correction paste 12 is applied, the correction is completed and the vicinity of the defective portion 2a is not contaminated.

Fig. 30 shows a state in which the films 3A and 3B are pressed against the substrate 1 by the flat surface 11a of the coating needle 11 from the state of Fig. 28(d). In a state where the correction paste 12 is adhered to the flat surface 11a, the coating needle 11 is pressed from above so that the flat surface 11a covers the entire through hole 3Aj and the groove 3Bi, and the film 3A, 3B is deformed, and the periphery of the opening of the groove 3Bi is minute. The film 3B of the range is in contact with the periphery of the defect portion 2a, and the correction paste 12 is filled in the defect portion 2a.

At this time, the amount of liquid of the correction paste 12 flowing through the through hole 3Aj to the groove 3Bi is reduced. Further, the slit 77 of the upper film 3A and the lower film 3B becomes small, the correction paste 12 is sucked into the slit 77 by capillary action, and the amount of liquid of the correction paste 12 flowing into the groove 3Bi is reduced. Therefore, it is possible to suppress the excess correction paste 12 from entering between the film 3B and the substrate 1 to cause contamination of the substrate 1.

Fig. 31(a)(b) is a view showing the overall configuration of the pattern correcting device 80. In particular, Fig. 31(a) is a front view thereof, and Fig. 31(b) is a XXXIB chart 31(a). - Sectional view of the XXXIB line. The pattern correction device 80 differs from the pattern correction device 60 of the 24th (a) and (b) drawings in that only the film supply unit 70 is replaced with the film supply unit 40, and therefore the description thereof will not be repeated.

[Implementation 7]

Fig. 32 is a plan view showing the pattern correction method of the embodiment 7 of the present invention, which is a view in comparison with Fig. 29. Referring to Fig. 32, the pattern correction method differs from the pattern correction method of the sixth embodiment in that the through hole 3Aj is not formed, and the groove 3Ai having a depth penetrating the upper film 3A and reaching the lower film 3B is formed.

The groove 3Ai is formed to intersect the groove 3Bi formed in the lower film 3B slightly perpendicularly. The depth of the groove 3Ai and the groove 3Bi is set to be larger and larger than the thickness of the films 3A and 3B. In this case, a region penetrating both the upper film 3A and the lower film 3B is a cross region C where the groove 3Bi and the groove 3Ai intersect. Further, in addition to the intersection region C, the lower film 3B is present under the groove 3Ai. By adjusting the length and width of the groove 3Ai, the size of the intersection area C and the amount by which the film 3B and the groove 3Ai overlap can be adjusted. Further, in Fig. 29, the groove 3Ai is also formed in a region where the flat surface 11a of the coating needle 11 is received. However, the groove 3Ai may have a size protruding from the flat surface 11a. In this embodiment 7, the same effect as that of the embodiment 3 can be obtained.

Further, with the high definition of the flat panel display, the pattern line width (for example, the electrode line of the TFT substrate) can be 10 μm or less, and correction must be performed with a pattern line width of 5 μm or less. For the use of the apertured film 3, the defect 2a on the pattern line having a width of 5 μm is corrected so as not to protrude the pattern, and it is necessary to open the film 3 with the same width as the pattern or a hole having a thinner width. . Even if a hole having a width of 3 μm is formed in the film 3, the cross-sectional shape thereof is such that the closer the tipping surface (the back surface of the film), the thinner the tip is. This is a feature of laser processing. The thicker the film 3 used, the more difficult it is to penetrate the hole, and it can be estimated that the film 3 is not corrected for the mask. On the other hand, when the pattern correction method of the seventh embodiment is used, the pattern of 5 μm or less can be corrected.

Fig. 33 is a cross-sectional view showing a state in which the grooves 3Ai and 3Bi are formed on the films 3A and 3B. Since the short axis length Sw of the groove 3Bi is small, the bottom 3Bii of the groove 3Bi is located in the film 3B in a state in which the film 3B of the film thickness Ft cannot be penetrated. In this state, a groove 3Ai deeper than the film thickness Ft of the film 3A is formed on the superposed films 3A and 3B, and a portion of the bottom 3Bii of the groove 3Bi is cut off at the intersection of the groove 3Ai and the groove 3Bi. The through hole is therefore usable as a photomask.

Further, the cross-sectional shape of the groove 3Bi is a tapered shape which is closer to the upper tip end, that is, a figure-eight shape. In this state, when the film 3A, 3B is pressed against the substrate 1 by the coating needle 11, and the opening of the groove 3Bi is brought into contact with the defect portion 2a, the force of the capillary phenomenon is applied to the groove 3Bi above the tip of the groove 3Bi. The correction paste 12 in the inside is combined with the force of the correction paste 12 and the weight of the correction paste 12 itself, and the correction paste 12 in the groove 3Bi is in a state of being swollen in the center. Therefore, it is possible to suppress the gap of the correction paste 12 from being sucked into the film 3 and the substrate 1.

Further, when the viscosity of the correction paste 12 to be used is large and it is difficult to flow into the groove 3Bi, as shown in FIG. 34, a plurality of grooves 3Ai intersecting the groove 3Bi may be formed to form a plurality of intersecting regions C.

Further, in the above-described embodiments 5 to 7, when the laser beam is irradiated to form the groove 3Bi, as shown in the 35th (a) diagram, not only the groove 3Bi but also the groove shown in Fig. 35(b) is formed. The partition 3Bc may be left around the 3Bi to form the groove 3Bb. Further, as shown in Fig. 35(c), the concave portion 3Bd is formed on the surface of the film 3 facing the substrate 1, the groove 3Bi is formed at the center of the concave portion 3Bd, and the groove 3Bb is formed in the concave portion 3Bd to surround the groove 3Bi. The width or depth of the concave portion 3Bd is set such that the film 3 is deformed at the time of application, and the film 3 including the minute range of the groove 3Ba can adhere to the range of the defective portion 2a. For example, if the film 3 is 12.5 μm thick, the width is about 100 μm to 300 μm, and the depth is about 1 μm to 5 μm. The recess 3Bd can be processed on the film 3 in advance, and the processing device can use a laser or a mechanical device (for example, mold transfer). Further, the concave portion 3Bd may be continuously formed in the extending direction of the film 3 or may be formed intermittently.

When the film 3 as shown in Fig. 35(b)(c) is corrected as a mask, even if the groove 3Bi and the defect portion 2a are in contact with each other, the intrusion of the correction paste 12 can be prevented by the groove 3Bb.

Further, in the implementation forms 5 to 7, the description will be made on the state of correcting the linear defect portion 2a, but even the L shape or A defect portion having a shape other than a straight line such as a glyph may be corrected by forming a groove 3Bi corresponding to the shape of the defect portion on the film 3B.

The method described so far is to enable the formation of a fine line pattern easily and stably. For example, it is applicable to electrode correction of a TFT (Thin Film Transistor) panel such as a liquid crystal panel, and it is necessary to form a pattern of 10 μm or less. Further, in addition to the electrodes, the black matrix of the liquid crystal color filter can be applied to the correction as the line width thereof is 20 μm or less with high definition.

The features of the embodiments disclosed herein are illustrative and not intended to be limiting. The scope of the present invention is defined by the scope of the appended claims

1. . . Substrate

2. . . electrode

2a. . . Defective part

3. . . membrane

3a. . . Through hole

3b. . . surface

3c. . . inside

3d. . . ditch

3f. . . Concave

3g. . . Opening

3h. . . hole

3i. . . ditch

3j. . . Through hole

3A. . . membrane

3Aa. . . Hole 2

3Aj. . . Through hole

3B. . . membrane

3Ba. . . First hole

3Bd. . . Concave

3Bi. . . ditch

4. . . Laser department

5. . . Observation optical system

6. . . Objective lens

7, 8. . . Fixed roller

9. . . Fixed roller

10. . . Masking board

11. . . Coating needle

11a. . . Flat surface

12. . . Correction cream

12A. . . Correction layer

12B. . . Correction layer

twenty one. . . TFT substrate

twenty two. . . glass substrate

twenty three. . . Brake line

23a. . . Gate electrode

twenty four. . . Gate insulating film

25. . . Gate insulating film

26. . . Pixel electrode

27. . . Semiconductor film

28. . .汲 line

28a. . . Helium electrode

28b. . . Broken wire defect

29. . . Source electrode

30. . . TFT

31. . . Protective film

32. . . foreign matter

33. . . Intersection

40. . . Membrane supply unit

41, 42, 43. . . Fixed roller

44. . . Fixed roller

45. . . Fixed roller

46. . . Movable component

47. . . Intersection area

51. . . Coating unit

52. . . container

52a. . . Hole 1

53. . . cover

53a. . . Hole 2

54. . . Coating needle fixing plate

62a. . . X-axis platform

62b. . . Y-axis platform

63. . . Z-axis platform

65. . . XYZ platform

66. . . Chuck

61. . . Fixed plate

70. . . Membrane supply unit

71. . . Film supply reel

72. . . Film reel

73. . . Base plate

74. . . Movable component

75. . . Direct acting bearing

Ft. . . thickness

G. . . Gap

S1. . . long

Sw. . . width

Fig. 1 is a view showing a pattern correction method according to a first embodiment of the present invention.

Fig. 2 shows the substrate shown in Fig. 1.

Fig. 3(a)(b) is a cross-sectional view showing a procedure for opening a through hole in the film shown in Fig. 1 and facing the defect portion.

Fig. 4 is a cross-sectional view showing a procedure of applying a correction paste to a defective portion through a through hole shown in Fig. 1.

Fig. 5 is a cross-sectional view showing a state in which the coating needle shown in Fig. 4 is retracted to the upper side.

Fig. 6(a)(b) is a cross-sectional view showing the effect of the pattern correction method shown in Figs. 1 to 5.

Fig. 7(a)(b) is a cross-sectional view showing the effect of the pattern correction method shown in Figs. 1 to 5.

Fig. 8 is a view showing a modified example of the embodiment 1.

Fig. 9 is a cross-sectional view showing another modification of the embodiment 1.

Fig. 10 is a view showing still another modification of the embodiment 1.

Fig. 11 is a cross-sectional view showing still another modification of the embodiment 1.

Fig. 12 (a) and (b) are views showing important portions of the TFT substrate to which the pattern correction method of the second embodiment is modified.

Fig. 13 is a perspective view showing a pattern correction method of the embodiment 2.

Fig. 14 is a view showing a state in which the broken line defect portion in Fig. 12(a) and (b) is corrected.

Fig. 15 is a view showing a modified example of the embodiment 2;

Figure 16 shows the formation of Figure 15 An oblique view of the method of correcting layers of glyphs.

Fig. 17 is a view showing another modification of this embodiment.

Figure 18 shows the image shown in Figure 16. A schematic representation of a method of applying a correction paste to a hole in a shape.

19(a) to (d) are diagrams showing important parts of the pattern correction device according to the third embodiment of the present invention.

Figures 20(a) to (c) show schematic diagrams of the first and second holes shown in Figures 19(a) to (d).

Fig. 21 is a cross-sectional view showing the procedure for applying the correction paste to the broken defect portion through the first and second holes shown in Figs. 20(a) to (c).

Fig. 22 (a) and (b) are cross-sectional views showing important portions of the coating unit including the coating needle shown in Fig. 21.

23(a) to (c) are diagrams showing a modified example of the embodiment 3.

Fig. 24 (a) and (b) are views showing the overall configuration of a pattern correction device according to an embodiment 4 of the present invention.

Fig. 25(a)(b) is a cross-sectional view showing a pattern correction method of the fifth embodiment of the present invention.

Fig. 26 is a plan view showing the pattern correction method shown in Fig. 25(a)(b).

Figures 27(a) and (b) show diagrams of a method of driving the film shown in Figure 26.

Fig. 28(a) to (d) are cross-sectional views showing important parts of the pattern correction device of the embodiment 6.

Fig. 29 is a plan view showing the grooves and through holes of the film shown in Figs. 28(a) to (d).

Fig. 30 is a cross-sectional view showing a procedure for applying a correction paste through the groove and the through hole shown in Fig. 29.

Fig. 31 (a) and (b) are views showing the overall configuration of the pattern correction device shown in Figs. 28 to 30.

Fig. 32 is a plan view showing the pattern correction method of the embodiment 7.

Fig. 33 is a sectional view showing the effect of the pattern correction method shown in Fig. 32.

Fig. 34 is a view showing a modified example of the embodiment 7.

35(a) to (c) are cross-sectional views showing other modified examples of the embodiment 7.

1. . . Substrate

2. . . electrode

2b. . . Electrode surface

3. . . membrane

3a. . . Through hole

Ft. . . thickness

G. . . Gap

S1. . . long

Sw. . . width

Claims (17)

A pattern correction method for correcting a defect portion of a fine pattern formed on a substrate, comprising: a first step of irradiating a laser onto the film to form a mask pattern for correcting the defect portion; the mask pattern The method includes: an opening formed on a surface of the laser light incident side of the film and having an opening corresponding to the shape of the defect portion, and at least one through hole communicating with the opening portion; and a second step of the reticle pattern The opening portion and the defect portion are separated from each other by a specific slit; and in the third step, the film is pressed to the substrate in a specific range including the opening portion, and the correction liquid is applied to the defect through the mask pattern And a fourth step of peeling the film from the substrate by the restoring force of the film. The pattern correction method according to claim 1, wherein the mask pattern is formed by one through hole formed by irradiating laser light on a surface of the film, the opening portion being the The opening on the front surface side of the film of the through hole has a tapered shape which is tapered from the surface side of the film toward the inner surface side. The pattern correction method according to claim 2, wherein the opening portion on the inner surface side of the film of the through hole is widened by irradiating the laser light from the inner surface side of the film. The pattern correction method according to claim 1, wherein the mask pattern includes: a groove having the opening portion corresponding to a shape of the defect portion, and the at least one through hole formed at a bottom of the groove. The pattern correction method according to claim 1, wherein the mask pattern comprises: a first groove formed by irradiating the laser light on a surface of the film, having a defect portion corresponding thereto The opening of the shape; and the second groove formed by irradiating the laser light on the inner surface of the film, wherein at least a portion overlaps the first groove vertically; The sum of the depths of the second grooves is larger than the thickness of the film, and the through holes are formed in the overlapping portions of the first and second grooves. The pattern correction method according to claim 5, wherein the first and second grooves intersect each other. The pattern correction method according to claim 6, wherein a plurality of the second grooves are provided. The pattern correction method of claim 1, wherein the mask pattern further comprises: forming around the opening portion to prevent the correction fluid from entering the film due to capillary phenomenon in the third step a groove between the substrates. The pattern correction method of claim 1, wherein the mask pattern further comprises: a concave portion formed on a surface of the film, the opening portion being formed on a bottom surface of the concave portion, in the second step, The surface of the film is in contact with the surface of the substrate such that the opening portion and the defect portion are separated from each other by the specific slit. The pattern correction method according to claim 1, wherein the film includes first and second films which are vertically overlapped; and when the correction liquid is applied to the defect portion through the mask pattern, the capillary phenomenon is caused by a capillary phenomenon The correction liquid is sucked into the slits of the first and second films. The pattern correction method according to claim 10, wherein the first and second films are folded back to overlap one film. The pattern correction method according to claim 1, wherein in the third step, the correction liquid is attached to the tip end surface of the coating needle, and the tip end surface of the coating needle is pushed to the specific range and transmitted through The mask pattern applies a correction liquid to the defect portion, and the coating needle is retracted upward in response to contact of the film with the substrate, and the film is peeled off from the substrate by the restoring force of the film. The pattern correction method according to claim 1, wherein the defective portion of the fine pattern formed on the substrate is a broken defect portion of a line formed on the TFT substrate. The pattern correction method according to claim 13, wherein a hardening treatment or a metal deposition treatment is applied to the correction layer formed of the correction liquid applied to the disconnection defect portion to ensure conductivity of the correction layer. The pattern correction method according to claim 13, wherein the opening of the mask pattern has a shape connecting the two end portions of the line on both sides of the disconnection defect portion. The pattern correction method according to claim 13, wherein the TFT substrate includes a first line, and a second line provided above the first line by an insulating layer, and the first and second lines are The intersection portion is formed with a short-circuit defect portion formed by cutting the second line on both sides of the short-circuit defect portion, and the opening portion of the mask pattern has the second line to be cut The shape in which the short-circuit defective portion is twisted back and connected between the two end portions. A pattern correction device for correcting a defect portion of a fine pattern formed on a substrate, comprising: a laser irradiation device that irradiates a laser onto the film to form a mask pattern for correcting the defect portion; the mask The pattern includes: an opening formed on a surface of the laser light incident side of the film and having a shape corresponding to the defect portion, and at least one through hole communicating with the opening portion; and a position determining device that patterns the reticle The opening portion and the defect portion are separated from each other by a specific slit; and the coating device pushes the film to the substrate in a specific range including the opening portion, and applies the correction liquid to the mask through the mask pattern The defect portion; and the film is peeled off from the substrate by the restoring force of the film.