JP2010085967A - Pattern correction method and pattern correction device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern correction method capable of easily correcting a fine pattern of ≤10 μm without damaging a substrate even when ruggedness exists on the surface of the substrate. <P>SOLUTION: In the pattern correction method, a through hole 3a with a shape corresponding to an open defect portion 2a of a wire 2 is formed on a film 3, correction paste 4 is supplied so as to cover the through hole 3a, the rear surface of the film 3 is opposed to a substrate 1 through a gap, gas is jetted to the surface of the film 3 to brought the through hole 3a into contact with the substrate 1, the correction paste 4 is applied to the open defect portion 2a through the through hole 2a, the jet of the gas is stopped, and the film 3 is peeled off from the substrate 1. Thereby, even when ruggedness exists on the surface of the substrate 1, the correction paste 4 can be applied without locally pressing the substrate 1 with strong force. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a pattern correction method and a pattern correction apparatus, and more particularly to a pattern correction method and a pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate. More specifically, the present invention relates to a pattern correction method and a pattern correction apparatus for correcting an open defect portion (disconnection defect portion) of wiring generated in a flat panel display manufacturing process.

  In recent years, with the increase in size and definition of flat panel displays such as plasma displays, liquid crystal displays, and EL displays, the probability of defects in wiring and liquid crystal color filters formed on glass substrates has increased. In order to improve the yield, a method for correcting defects has been proposed.

  For example, wiring is formed on the surface of a glass substrate of a liquid crystal display. If this wiring is disconnected, apply conductive correction paste (correction liquid) attached to the tip of the application needle to the open defect, and apply multiple times while shifting the application position in the length direction of the wiring. There is a method of correcting (see, for example, Patent Document 1).

  In addition, a film is provided so as to cover the defective portion, the defective portion and the film are removed almost simultaneously using laser light, and a correction ink (correction liquid) is applied to the removed portion using the film as a mask. There is a method of peeling and removing (for example, see Patent Documents 2 to 4).

JP-A-8-292442 JP-A-4-369604 Japanese Patent Laid-Open No. 11-125895 JP 2005-95971 A

  However, in the method of correcting the open defect portion using the application needle, the correction paste adhering to the flat surface at the tip of the application needle is transferred to the open defect portion, so the application diameter of the correction paste is the diameter of the flat surface at the tip of the application needle. Determined by. Therefore, it is difficult to realize a coating diameter of about 10 μm, and it is difficult to form a thin line using this.

Further, since the flat surface at the tip of the application needle is very small, the surface pressure increases even if the movable part including the application needle is lightweight. For example, even if the weight of the movable part including the application needle is as light as about 10 g, if the diameter of the flat surface at the tip of the application needle is 50 μm, the surface pressure is about 5 kg / mm ² . Therefore, when a minute protrusion exists in the vicinity of the defective portion, it is assumed that the protrusion is crushed or the surface pressure is locally increased. In addition, it is conceivable that the correction paste cannot be applied to the defective portion because the protrusion interferes.

  Moreover, in the correction method using a film as a mask, it is possible to correct a minute defect portion of 10 μm or less. However, in this correction method, the film and the defective portion are removed almost simultaneously with the laser beam, so that a large laser power is required, and the periphery of the defective portion is damaged. Alternatively, since a through-hole is formed by laser ablation in a film adhered to (attached to) a defective portion, dust generated at that time may enter the gap between the film and the substrate and contaminate the vicinity of the defective portion. Further, if the correction paste is applied to the through hole in a state where the film and the substrate are adhered or in close contact with each other, the correction paste is sucked into the gap between the film and the substrate by a capillary phenomenon and spreads, and the substrate may be contaminated.

  SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a pattern correction method and a pattern correction apparatus capable of easily correcting a fine pattern of 10 μm or less without damaging the substrate even when the substrate surface is uneven. That is.

  The pattern correction method according to the present invention is a pattern correction method for correcting a defect portion of a fine pattern formed on a substrate, and includes a first step of forming a through hole having a shape corresponding to the defect portion in the film, A second step of supplying a correction liquid to a range including at least a through hole on the surface of the film, and a third step of making the back surface of the film and the substrate face each other with a gap in a state where the defect portion and the through hole are aligned. And a gas is sprayed to a range including at least the through hole on the surface of the film to bring the opening of the through hole on the back side of the film into contact with the substrate, and the correction liquid is applied to the defective part through the through hole. And a fifth step of stopping gas injection and peeling the film from the substrate.

Preferably, the gas pressure and the injection time in the fourth step are set in advance.
Also preferably, in the third step, the film is disposed substantially parallel to the substrate under a constant tension at least in a range facing the substrate.

  Preferably, in the fourth step, gas is injected to deform the film so that the opening of the through hole is brought into contact with the substrate. In the fifth step, the injection of gas is stopped, and the film is restored by the restoring force of the film. Is peeled from the substrate.

  Preferably, in the fourth step, gas is jetted substantially perpendicularly to the film toward the through hole.

  Preferably, in the third step, the gap is set smaller than an amount by which the film is deformed downward by gas injection.

  Preferably, the correction liquid is applied to a range including the through holes on the surface of the film, and the third to fifth steps are repeated while changing the position on the substrate, and the correction liquid is applied using the same through holes. Apply several times.

  Preferably, in the first step, one or more through holes are formed, and when a plurality of through holes are formed, a closed region is not formed by the plurality of through holes.

  Preferably, there are a plurality of adjacent defect portions on the substrate, and in the first step, a plurality of through holes are formed in the film in accordance with the plurality of defect portions, and in the second step, the surface of the film is formed. In the third step, the back surface of the film and the substrate are confronted with each other in a state where the plurality of defective portions and the plurality of through holes are aligned with each other. In the fourth step, gas is injected into a range including a plurality of through holes on the surface of the film to bring the openings of the through holes on the back side of the film into contact with the substrate, and the correction liquid is passed through the through holes. Is applied to the corresponding defective part.

  Preferably, in the first step, a mark for confirming the position of the through hole is formed on the surface of the film.

  Preferably, in the first step, the upper surface of the film is irradiated with a laser beam to form a through hole, and a region including the through hole is irradiated with a weak power laser beam to remove dust, and then the film is inverted. Let the lower surface of the film be the surface of the film.

  Preferably, in the first step, a groove for holding the correction liquid is formed on the surface of the film, and in the second step, the correction liquid is also supplied into the groove.

Also preferably, the gas comprises a solvent vapor of the correction fluid.
Preferably, in the fourth step, either one of a gas containing the correction liquid solvent vapor and a gas not containing the correction liquid solvent vapor is selectively injected.

  Further preferably, the method further includes a sixth step of supplying a vapor of the solvent of the correction liquid to a range including at least the through-hole on the back surface of the film and suppressing drying of the correction liquid supplied in the second step.

  Preferably, the method further includes a seventh step of baking the correction liquid applied to the defective portion.

  The pattern correction apparatus according to the present invention is a pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate, and includes a film supply means for supplying a film and a through hole having a shape corresponding to the defective portion. A through-hole forming means for forming a film on the film, a correction liquid supply means for supplying a correction liquid to a range including at least the through-hole on the surface of the film, and a back surface of the film and the substrate facing each other with a gap therebetween, and the film and the substrate A position adjusting means for adjusting the relative position of the film, and a gas is injected into a range including at least the through hole on the surface of the film to bring the opening of the through hole on the back side of the film into contact with the substrate, and the correction liquid is passed through the through hole. And a gas jetting means for applying to the defective part.

Preferably, the gas comprises a solvent vapor of the correction fluid.
Further preferably, the gas injection means further comprises a selection means for selecting one of a gas containing the solvent vapor of the correction liquid and a gas not containing the vapor of the correction liquid solvent. The gas selected by the means is injected.

  Further preferably, the apparatus further includes a solvent vapor supply unit that supplies the vapor of the solvent of the correction liquid to a range including at least the through-hole on the back surface of the film and suppresses drying of the correction liquid supplied by the correction liquid supply unit.

  Preferably, it further includes a baking means for baking the correction liquid applied to the defective portion.

  In the pattern correction method and the pattern correction apparatus according to the present invention, a through hole having a shape corresponding to the defect portion is formed in the film, and the correction liquid is supplied to a range including at least the through hole on the surface of the film. In a state where the film is aligned, the back surface of the film and the substrate are opposed to each other, and a gas is injected into a range including at least the through hole on the surface of the film to contact the opening portion of the through hole on the back surface side of the film with the substrate Then, the correction liquid is applied to the defective portion through the through hole, the gas injection is stopped, and the film is peeled off from the substrate. Therefore, even when the surface of the substrate is uneven, the correction liquid can be applied without strongly pressing the substrate locally, and a fine pattern of 10 μm or less can be easily corrected without damaging the substrate. it can.

It is a figure which shows the board | substrate of the correction object of the pattern correction method by Embodiment 1 of this invention. It is sectional drawing which shows the pattern correction method which corrects the open defect part shown in FIG. It is sectional drawing which shows the gas injection process of the pattern correction method shown in FIG. It is sectional drawing which shows the state after completion | finish of the gas injection process shown in FIG. It is sectional drawing which shows the process of baking the correction pattern shown in FIG. It is sectional drawing which shows the through-hole formation process of the pattern correction method shown in FIG. It is sectional drawing which shows the correction paste supply process of the pattern correction method shown in FIG. 5 is a diagram illustrating a modification example of the first embodiment. FIG. It is a figure which shows the other example of a change of Embodiment 1. FIG. FIG. 10 is a diagram showing a plurality of through holes for correcting a plurality of open defect portions shown in FIG. 9. FIG. 10 is a diagram showing still another modification example of the first embodiment. FIG. 10 is a diagram showing still another modification example of the first embodiment. It is a figure which shows the structure of the pattern correction apparatus which performs the pattern correction method shown in FIGS. It is a figure which shows the structure of the TFT array substrate which is the correction object of the pattern correction method by Embodiment 2 of this invention. It is a figure which shows the shape of the through-hole for correcting the open defect part shown in FIG. It is a figure which shows the correction pattern formed using the through-hole shown in FIG. It is a figure which shows the example of a change of Embodiment 2. FIG. It is a figure which shows the shape of the through-hole for forming the correction pattern shown in FIG. It is sectional drawing which shows the gas injection process of the pattern correction method by Embodiment 3 of this invention. FIG. 10 is a diagram illustrating a modification example of the third embodiment. FIG. 20 is a diagram showing another modification example of the third embodiment. It is a figure which shows the structure of the pattern correction apparatus which performs the pattern correction method shown in FIG.

[Embodiment 1]
FIG. 1 is a diagram showing a substrate 1 to be corrected by a pattern correcting method according to Embodiment 1 of the present invention. In FIG. 1, it is assumed that a wiring 2 that is a fine pattern is formed on a substrate 1, and an open defect 2 a is generated in a part of the wiring 2.

  In FIG. 2, in this pattern forming method, a film 3 is arranged in parallel with a predetermined gap G <b> 1 with respect to the surface of the substrate 1. A constant tension is applied to the film 3. The gap G1 is set in a range in which the film 3 can be deformed and brought into contact with the substrate 1, and is, for example, about 10 μm to 200 μm. The film 3 is a thin polyimide film, for example. The width | variety of the film 3 should just be sufficient width | variety to use as a mask, for example, is about 5 mm-15 mm. The film 3 is, for example, a part of a roll film that is slit in its width. The thickness of the film 3 is preferably such that the bottom can be seen through, for example, about 10 to 25 μm.

  The film 3 is formed with a through hole 3a having substantially the same shape as the correction pattern to be formed in the open defect portion 2a. For example, the width of the through hole 3 a is set to be approximately the same as the width of the wiring 2. The length of the through hole 3a is set longer than the length of the open defect portion 2a so that both end portions of the through hole 3a overlap the normal wiring 2 at both ends of the open defect portion 2a. The through hole 3a is formed by laser irradiation. As the laser, a pulse laser such as a YAG third harmonic laser, a YAG fourth harmonic laser, or an excimer laser is used.

  The correction paste 4 is supplied in advance to a minute range including the through hole 3 a on the upper surface of the film 3. The supply of the correction paste 4 is performed using a dispenser or a coating needle. However, if the correction paste 4 has a low viscosity, an ink jet method can be used, and the supply method of the correction paste 4 is not limited. .

  Above the film 3, the nozzle 5 is disposed substantially perpendicular to the surface of the film 3. The injection port 5a at the tip of the nozzle 5 is disposed to face the through hole 3a with a predetermined gap G2. The gap G2 is set such that the tip of the nozzle 5 does not come into contact with the correction paste 4, and is, for example, about 1 mm to 2 mm.

  As shown in FIG. 3, a gas injection device 6 for supplying gas to the nozzle 5 is provided. The gas injection device 6 includes a regulator (R) 7 that adjusts the pressure of the gas, an electromagnetic valve (V) 8 connected between the outlet of the regulator 7 and the proximal end of the nozzle 5, and the opening time of the electromagnetic valve 8. And a timer (T) 9 for controlling. A gas supply source (G) 10 is connected to the inlet of the regulator 7. As the gas, for example, nitrogen gas is used, but compressed air may be used as long as the correction paste 4 to be used does not deteriorate. The electromagnetic valve 8 may be controlled by a control computer or PLC (Programmable Logic Controller) without providing the timer 8.

  After adjusting the gas pressure and the gas injection time optimally, the electromagnetic valve 8 is opened only for the time set by the timer 9, and the gas is injected from the nozzle 5 into the range including the through hole 3a from above the film 3. The film 3 in a range including the through holes 3 a is brought into contact with the substrate 1 by the gas injection. If the gas injection is stopped, as shown in FIG. 4, the film 3 in the range including the through hole 3 a is separated from the substrate 1 by the restoring force of the film 3, and the substrate 1 has a correction pattern having substantially the same shape as the through hole 3 a. 4a is formed. The gas injection time is, for example, 1 second or less. Further, the inner diameter of the nozzle 5 is, for example, about 0.1 mm to 1 mm so that the film 3 can be brought into contact with the substrate 1 in a range including at least the through hole 3a. The gas pressure is set to about 0.1 to 0.3 MPa, for example.

  Thus, since gas is injected to the range containing the through-hole 3a, the correction paste 4 in the through-hole 3a is pushed by gas, and is extruded to the back surface side (board | substrate 1 side) of the film 3. FIG. For this reason, the film thickness of the correction pattern 4a can be increased.

  If the width of the through hole 3a is smaller than the film thickness of the film 3, the force for holding the correction paste 4 in the through hole 3a tends to increase. For this reason, if the film 3 is simply brought into contact with the substrate 1, the correction paste 4 in the through hole 3a remains in the through hole 3a as it is, and the film thickness of the correction pattern 4a formed on the substrate 1 is very high. getting thin. For example, a film including a through hole 3a is formed after a through hole 3a having a width of 5 μm is formed in a film 3 having a thickness of 12.5 μm, and a gold nano correction paste 4 having a viscosity of 10 Pa · s is attached to the tip of a coating needle. When the pattern is formed by pressing 3 to the substrate 1 side, the film thickness of the correction pattern 4a is as thin as about 0.4 μm. For this reason, the resistance value of the corrected portion cannot be lowered by one application and baking, and multiple applications and corrections are required for one defective portion 2a (Japanese Patent Laid-Open No. 2008-15340). reference).

  On the other hand, in this invention, since the correction paste 4 in the through-hole 3a is extruded by the pressure of the injected gas to the back surface side (board | substrate 1 side) of the film 3, the film thickness of the correction pattern 4a is made thick. Is possible. As described above, a through hole 3a having a width of 5 μm was formed in the film 3 having a thickness of 12.5 μm, and the gold nano correction paste 4 having a viscosity of 10 Pa · s was supplied onto the film 3 including the through hole 3a. Later, when the pattern was formed by gas injection, the thickness of the correction pattern 4a could be increased to about 1.5 μm. As an example, when the modified pattern 4a having a width of 5 μm and a length of 50 μm was formed on the open defect portion 2a having a width of 5 μm and a length of 20 μm and fired, the resistance value of the corrected portion became 20Ω or less.

  Then, as shown in FIG. 5, the correction pattern 4A which hardened | cured and hardened the correction pattern 4a using the baking apparatus 11 is obtained. As the baking apparatus 11, a YAG second continuous wave laser or the like is used. The correction pattern 4a may be radiated and fired at once, or may be fired while the laser beam is focused and scanned on the correction pattern 4a.

  As the correction paste 4, a metal nano paste of gold or silver is used. Since pattern formation is performed using gas injection, it is possible to use a correction paste 4 having a viscosity higher than that of pattern formation using an ink jet or a dispenser. For example, a gold nanopaste having a viscosity of about 1 Pa · s to 20 Pa · s is used. It is also possible to use it. If the correction paste 4 has a high viscosity, the metal weight ratio is also high, so that the pattern film thickness after baking can be made thicker and the resistance can be lowered. Moreover, if the correction paste 4 having a high viscosity is used, the correction paste 4 can be prevented from being scattered around when the gas is injected, and the correction pattern 4A having a shape substantially equal to the shape of the through hole 3a is formed. Can do.

  In this pattern correction method, since the film 3 is brought into contact with the substrate 1 by jetting gas, the film 3 can be pressed with a uniform pressure. For this reason, even if the surface of the substrate 1 is uneven, the film 3 can be brought into contact with the surface, and the correction paste 4 can be prevented from protruding into the gap between the film 3 and the substrate 1. Further, even when there is a protrusion on the surface of the substrate 1, no concentrated load is applied to the protrusion, so that the substrate 1 is not deformed or damaged.

  Further, as shown in FIG. 4, even after the pattern correction, the amount of the correction paste 4 supplied so as to cover the through hole 3a is not much different from that before the application, so that the pattern correction is performed a plurality of times using the same hole 3a. It is also possible. In this case, the formation time of the through hole 3a and the supply time of the correction paste 4 are shortened, and the tact time for pattern correction can be shortened.

  If the same through-hole 3a is applied several times, the correction paste 4 on the through-hole 3a is reduced and the width of the correction pattern 4a formed on the substrate 1 is reduced. Since the film thickness becomes thin, the correction paste 4 may be periodically replenished on the through-holes 3a, or the correction paste 4 may be replenished as needed by looking at the shape of the correction pattern 4a.

  Further, when the pattern correction is performed a plurality of times using the same through-hole 3a, it is assumed that the usage time becomes long and the correction paste 4 is dried and the pattern correction becomes unstable. The paste 4 may be used to prevent drying.

  Further, when the pattern is repeatedly formed near the position where the pattern has already been corrected, it is assumed that the existing correction pattern 4a adheres to the back surface of the film 3 and the existing correction pattern 4a is crushed or the back surface of the film 3 is contaminated. Therefore, in such a case, it is desirable to fire the existing correction pattern 4a.

  FIG. 6 is a cross-sectional view showing a step of opening the through hole 3 a in the film 3. In FIG. 6, the film 3 is arranged substantially horizontally with a certain tension by two fixed rollers 12 and 13, and a film supply reel 14 and a take-up reel 15 are arranged on both sides thereof. The observation optical system 16 is positioned above the film 3 supported by the two fixed rollers 12 and 13. An objective lens 17 is provided at the lower end of the observation optical system 16, and a laser 18 is provided on the observation optical system 16.

  The laser light emitted from the laser 18 is collected by the observation optical system 16 and the objective lens 17 and irradiated onto the film 3, and a through hole 3 a in the shape of a laser spot is opened in the film 3. The shape of the laser spot is determined by, for example, a variable slit (not shown) built in the laser 18. As the laser 18, a pulse laser such as a YAG third harmonic laser, a YAG fourth harmonic laser, or an excimer laser is used.

  The step of opening the through-hole 3a in the film 3 is performed by the film 3 alone so that the laser beam does not hit the substrate 1 or a position away from the substrate 1. For example, the film 3 is processed by being horizontally supported by the left and right fixed rollers 12 and 13 at a position deviated from above the substrate 1. If the through-hole 3 a is opened above the substrate 1, the shielding plate 19 is placed on the film 3 so that the substrate 1 is not directly irradiated with laser light and dust generated by laser ablation does not fall on the substrate 1. You may arrange | position below.

  When the formation of the through hole 3a is completed, dust generated during laser ablation is scattered on the surface of the film 3. In order to remove dust, a step of irradiating a low-power laser beam over a wide range around the through hole 3a may be included. At this time, it is possible to remove only dust by switching to the YAG second harmonic laser and irradiating with a low-power laser beam. In this case, a laser 18 that can selectively emit one of two types of laser light, that is, laser light for opening the through hole 3a and laser light for removing dust is used. Good.

  FIG. 7 is a diagram illustrating a process of supplying the correction paste 4 to a minute range including the through holes 3 a formed in the film 3. Any method may be used to supply the correction paste 4, but here, a method of supplying the correction paste 4 using the application needle 20 will be described as an example. In addition, the position of the board | substrate 1 and the through-hole 3a in the XY direction shall be adjusted to the position to correct beforehand.

  The correction paste 4 is attached to the tip of the coating needle 20 whose tip is flattened, the coating needle 20 is lowered from above the through-hole 3a and the tip is brought into contact with the film 3, and correction is made to a minute range including the through-hole 3a. Paste 4 is supplied. At this time, the film 3 supported by the two fixed rollers 12 and 13 so that the film 3 is bent downward by a load when the application needle 20 contacts the film 3 and the through hole 3a and the substrate 1 do not contact with each other. The gap G3 with the substrate 1 is set larger than the deformation amount of the film 3.

  Hereinafter, various modifications of the first embodiment will be described. In the method for supporting the film 3 shown in FIGS. 6 and 7, since the back surface of the film 3 faces the substrate 1, the edge of the through hole 3 a on the back surface side of the film 3 comes into contact with the substrate 1 when gas is injected. It is also conceivable that burrs or the like are generated at the edge of the through hole 3a on the back side of the film 3, and the side surface shape of the correction pattern 4a is disturbed.

  8A and 8B show a film arrangement method that can eliminate the influence of burrs on the edge of the through hole 3a. In this film arrangement method, two fixed rollers 21 and 22 are arranged on the left and right, and a fixed roller 23 is arranged above them. The film 3 is supplied obliquely from the upper left in the figure, supplied to the right through the fixed roller 23, folded back to the left by the fixed roller 22, and passed through the fixed roller 21 to the left in the figure. It is wound up obliquely upward. Accordingly, the film 3 is folded left and right and stretched in parallel up and down. In this state, the surface of the film 3 between the fixed rollers 22 and 23 is irradiated with laser light to form a through hole 3a. At this time, a shielding plate 19 wider than the film 3 may be disposed between the upper and lower films 3 so that dust generated by laser ablation does not fall on the substrate 1.

  In FIG. 8A, the film 3 is stretched up and down, and when the through-hole 3a is opened in the upper film 3, the lower film 3 is shielded because the film 3 exists below the through-hole 3a. When the plate 19 can be used, the shielding plate 19 can be omitted.

  Further, when the formation of the through holes 3a is completed, dust generated during laser ablation is scattered on the surface of the film 3. In order to remove dust, a low-power laser beam may be irradiated over a wide range around the through hole 3a. At this time, by switching to the YAG second harmonic laser and irradiating a wide range around the through-hole 3a with a low-power laser beam, it is possible to remove only dust, and new dust is generated. This can be prevented. As the laser 18, a laser that can selectively emit one of two types of laser light, that is, laser light for opening the through-hole 3 a and laser light for removing dust is preferably used.

  Next, as shown in FIG. 8B, the film 3 is wound in the R direction (clockwise direction) in the figure, and the film 3 is inverted so that the surface (laser irradiation surface) of the film 3 faces downward. . If it does in this way, the edge of the through-hole 3a by the side of the back surface of the film 3 may face up, and the surface of the film 3 can be made to oppose the board | substrate 1. FIG. Therefore, it is possible to eliminate the influence of burrs at the edge of the through hole 3a, and the end face of the correction pattern 4a can be made uniform.

  Further, when the resist is exposed, developed, and etched with foreign matter adhering to the substrate 1 or dust adhering to the exposure mask, a plurality (two in the figure) are obtained as shown in FIG. The wiring 2 may be disconnected in the vicinity. When there are a plurality of open defect portions 2a adjacent to each other as described above, it is possible to correct them one by one by the method shown in FIGS. 1 to 5, but the plurality of open defect portions 2a are corrected at a time. It is also possible.

  That is, as shown in FIG. 10, a plurality of through holes 3 a each having a shape corresponding to a plurality of open defect portions 2 a are formed in the film 3. After supplying the correction paste 4 so as to cover all the through-holes 3a, the correction paste 4 can be applied to a plurality of open defect portions 2a adjacent to each other by one gas injection if the steps shown in FIGS. Can be applied, improving the work efficiency of correction.

  The plurality of through holes 3a are formed so as not to form a closed region with them. By doing so, it is possible to form a plurality of fine correction patterns 4a without forming a large hole in the film 3.

  In addition, the relative alignment between the through hole 3a and the substrate 1 can be performed using the respective position coordinates. However, when the same through hole 3a is used to repeatedly form a pattern, the through hole 3a is corrected. Since it is covered with the paste 4, the through hole 3a may not be directly observed. Therefore, in the modified example of FIG. 11, a mark for confirming the position of the through hole 3 a is formed on the film 3. That is, a plurality of (four in the figure) grooves 3b are formed by irradiating a laser beam to a position in the vicinity of the through-hole 3a and not covered with the correction paste 4, and the positions of the plurality of grooves 3b are confirmed. Use as a landmark. It is preferable that the intersection of the extended lines of the plurality of grooves 3b be the center point of the through hole 3a. The groove 3b may be formed together when the through hole 3a is formed by laser ablation.

  In the modification of FIG. 12, a groove 3c for holding the correction paste 4 is formed in a range including the through hole 3a of the film 3. The groove 3c is formed with a depth that does not penetrate the film 3, and holds the correction paste 4 supplied in a range including the through hole 3a. The groove 3c increases the amount of the correction paste 4 that can be held, and suppresses the scattering of the correction paste 4 during gas injection. This modification example is effective when a large amount of correction paste 4 is supplied and correction is repeatedly performed using the same through-hole 3a.

  When the shape of the through hole 3a is changed or when the through hole 3a is clogged, the film 3 is wound up to form a new through hole 3a, and the pattern correction is performed by the above-described method.

  FIG. 13 is a diagram showing a configuration of a pattern correction apparatus that executes the pattern correction method shown in FIGS. In FIG. 13, the pattern correction apparatus includes a gantry type XY stage 31 mounted on a surface plate 30. The XY stage 31 includes an X-axis stage 31a that moves in the left-right direction in the figure, and a portal-shaped Y-axis stage 31b that can move in a direction perpendicular to the paper surface. The X-axis stage 31a is provided with a Z-axis stage 32 that can move in the vertical direction. On the Z-axis stage 32, a laser 18, an observation optical system 16, an objective lens 17, a baking apparatus 11, and an XYZ stage 33 are fixed.

  The XYZ stage 33 includes two X axes that can move independently, and a coating unit 34 and a nozzle 5 for gas injection are mounted on each of them. The application unit 34 includes an application needle 20 and a container 35, and the correction paste 4 is injected into the container 35. In the bottom of the container 35, a hole 35a through which the application needle 20 can pass is formed. During standby, the tip of the application needle 20 is immersed in the correction paste 4 in the container 35. At the time of application, the tip of the application needle 20 penetrates the hole 35a and projects below the container 35. As a result, the correction paste 4 adheres to the tip of the application needle 20.

  A chuck 36 is provided on the surface plate 30. The substrate 1 is placed on the chuck 36 and fixed to the chuck. An XYZ stage 37 is provided on the X-axis stage 31a. The XYZ stage 37 moves the film supply unit 38 in the XYZ directions. The film supply unit 38 is configured to retract upward using a linear motion bearing (not shown) as a guide. For this reason, even if the film supply unit 38 contacts the substrate 1, no impact is generated on the substrate 1.

  The coating unit 34 is controlled together with the XYZ stage 33 and supplies the correction paste 4 to a range including the through hole 3 a of the film 3. The XYZ stage 37 moves the film supply unit 38 to place the film 3 immediately below the objective lens 17. In addition, when the through hole 3a is formed in the film 3, the XYZ stage 37 adjusts the defect correction position by aligning the through hole 3a and the substrate 1 and adjusts the gap between the film 3 and the substrate 1. Also used.

[Embodiment 2]
FIG. 14A is a plan view showing a main part of a TFT (thin film transistor) array substrate 41 to be corrected by the pattern correcting method according to the second embodiment of the present invention, and FIG. 14B is a plan view of FIG. Is a sectional view taken along line XIVB-XIVB. 14A and 14B, the TFT array substrate 41 includes a glass substrate. A gate line 43 extending in the left-right direction in the figure is formed on the surface of the glass substrate 42, and a gate electrode 43 a protruding downward in the figure in a predetermined position of the gate line 43 is formed. The surfaces of the gate line 43 and the gate electrode 43 a are covered with a gate insulating film 44, and the surfaces of the gate insulating film 44 and the glass substrate 42 are covered with a gate insulating film 45.

  A plurality of pixel electrodes 46 are formed in a matrix on the surface of the gate insulating film 45. A gate line 43 is arranged in a region between two pixel electrodes 46 adjacent in the vertical direction in the drawing. A semiconductor film 47 is formed above the gate electrode 43a via gate insulating films 44 and 45. A drain line (signal line) 48 extending in the vertical direction in the figure is formed in a region between two pixel electrodes 46 adjacent in the horizontal direction in the figure, and at a predetermined position of the drain line 48 in the figure. A drain electrode 48a protruding leftward is formed. The end of the drain electrode 48 a extends to the surface of one end of the semiconductor film 47. A source electrode 49 is formed from the surface of the other end of the semiconductor film 47 to the surface of one end of the pixel electrode 46.

  In this manner, the TFT 50 including the gate electrode 43a, the drain electrode 48a, the source electrode 49, and the semiconductor film 47 is formed. The whole is covered with a protective film 51 and an alignment film (not shown), and the TFT array substrate 41 is completed. The TFT array substrate 41, the liquid crystal, and the color filter constitute a liquid crystal panel.

  Here, as shown in FIG. 14A, it is assumed that an open defect portion 48 b exists in the drain line 48. When the open defect portion 48b is corrected after the protective film 51 is formed, a part of the protective film 51 is removed by laser processing to expose the open defect portion 48b, and the correction paste 4 is applied, baked, and drain line 48. After securing the conduction, it is necessary to re-form the protective film 51 on the correction portion. For this reason, it is preferable to correct the open defect portion 48b in the step before forming the protective film 51 so as to simplify the correction effort. For example, the protective film 51 is not present when the formation of the drain line 48 is completed, and the open defect portion 48b is corrected at this point.

  As described above, when the straight (I-shaped) open defect portion 48b is corrected, as shown in FIG. 15, a straight through hole 3a is formed in the film 3, and the region including the through hole 3a is corrected. Paste 4 (two-dot chain line region) is supplied. The correction paste 4 is applied to the open defect portion 48b by the method shown in FIGS. 2 to 5 and baked to obtain a correction pattern 4A. As shown in FIG. 16, the correction pattern 4A is formed in a straight line so as to overlap the surfaces of the two normal drain lines 48 existing at both ends of the open defect portion 48b. The width Dw of the drain line 48 tends to be miniaturized, and recently, a width of 5 μm or less has been manufactured. The correction pattern 4A does not protrude into the region of the pixel electrode 46 and is formed to be approximately the same as the wiring width Dw of the drain line 48. However, when the protrusion is large, a process of removing the protrusion using the laser 18 is performed. May be added.

  Further, as shown in FIG. 17, a U-shaped correction pattern 4A that bypasses the open defect portion 48b may be formed. In this case, as shown in FIG. 18, three straight through holes 3a are combined to form a U-shaped through hole, and the correction paste 4 is supplied so as to cover all the through holes 3a. Even when a U-shaped through-hole is formed, it is possible to apply all at once in the steps shown in FIGS. When the pixel electrode 46 and the correction pattern 4A are short-circuited by detouring, a part of the pixel electrode 46 may be laser-cut to form a notch 46a.

In the second embodiment, the same effect as in the first embodiment can be obtained.
[Embodiment 3]
When correcting a plurality of open defect portions 2a using the same through-hole 3a, the correction paste 4 on the film 3 is dried over time, the correction pattern 4a applied to the open defect portion 2a is interrupted, or the shape is tapered. It is also assumed that the through hole 3a is clogged. In the third embodiment, this problem can be solved.

  FIG. 19 is a cross-sectional view showing a gas injection process of the pattern correction method according to the third embodiment of the present invention, and is a view compared with FIG. In this pattern correction method, a solvent vapor generation unit 60 is added in the gas ejection device 6. The solvent vapor generation unit 60 includes a container 61 and a pipe 62. One end of the pipe 62 is connected to the outlet of the electromagnetic valve 8, and the other end passes through the upper end of the side wall of the container 61 and is bent to the bottom side of the container 61. Moreover, the outlet 61a is provided in the upper end part of the side wall of the container 61, and the outlet 61a of the container 61 is connected to the base end of the nozzle 5 via piping.

  The solvent 61 of the correction paste 4 is injected into the container 61, and the container 61 is filled with the vapor of the solvent 63. The solvent 63 of the correction paste 4 is a solvent included in the correction paste 4 (for example, a solvent that disperses metal fine particles included in the correction paste 4) or a solvent that can dilute the correction paste 4. For example, when the diluent of the correction paste 4 is terpineol, terpineol is injected into the container 61 as the solvent 63.

  In addition, when the container 61 into which the solvent 63 is injected moves along with the defect correction, it is assumed that the liquid level of the solvent 63 is shaken and the solvent 63 flows to the nozzle 5 side. In order to prevent the solvent 63 from flowing toward the nozzle 5, a filter 64 may be provided in the container 61 so as to cover the outlet 61 a from the inside of the container 61, the solvent 63 may be gelled, or the solvent 63. The sheet 65 having absorbed therein may be placed in the container 61. Furthermore, the vapor amount of the solvent 63 can be increased by heating the container 61 with a heater (not shown).

  In the same manner as in the first embodiment, the through hole 3a of the film 3 is positioned above the open defect portion 2a, and the correction paste 4 is supplied onto the film 3 so as to cover the through hole 3a. Open for the time set in 9. Thereby, the gas and the vapor of the solvent 63 are mixed in the container 61, and the gas containing the vapor of the solvent 63 is injected from the nozzle 5 into the range including the through hole 3 a from above the film 3.

  The film 3 in a range including the through holes 3 a is brought into contact with the substrate 1 by the gas injection. If the gas injection is stopped, as shown in FIG. 4, the film 3 in a range including the through hole 3 a is separated from the substrate 1 by the restoring force of the film 3, and the substrate 1 is corrected to have substantially the same shape as the through hole 3 a. A pattern 4a is formed.

  In the third embodiment, since the gas containing the vapor of the solvent 63 of the correction paste 4 is injected, an appropriate amount of the solvent 63 can be supplied to the correction paste 4 on the film 3 to prevent the correction paste 4 from drying. . Accordingly, even when a plurality of open defect portions 2a are corrected using the same through hole 3a, the correction paste 4 on the film 3 is dried, the correction pattern 4a is interrupted, the shape is tapered, or the through hole It is possible to prevent clogging of 3a.

  FIG. 20 is a block diagram showing a modification of the third embodiment, and is a diagram contrasted with FIG. In FIG. 20, in this modified example, electromagnetic valves (V) 66 and 67 and a selector (S) 68 are added in the gas injection device 6. The inlet of the electromagnetic valve 66 is connected to the outlet 61a of the container 61, and the outlet of the electromagnetic valve 66 is connected to the proximal end of the nozzle 5 via a pipe. The inlet of the electromagnetic valve 67 is connected to a pipe between the outlet of the regulator 7 and the electromagnetic valve 8, and the outlet of the electromagnetic valve 67 is connected to a pipe between the outlet of the electromagnetic valve 66 and the base end of the nozzle 5.

  The output signal of the timer 9 is given to the selector 68. The selector 68 is controlled by a selection signal φS. The selection signal φS is set to the “H” level when the gas containing the solvent 63 vapor of the correction paste 4 is jetted, and is set to the “L” level when the gas not containing the vapor of the solvent 63 of the correction paste 4 is jetted. Is done. The selector 68 gives the output signal of the timer 9 to the electromagnetic valves 8 and 66 when the selection signal φS is at “H” level, and outputs the output signal of the timer 9 when the selection signal φS is at “L” level. This is applied to the electromagnetic valve 67.

  When selection signal φS is at “H” level, electromagnetic valves 8 and 66 are opened for a predetermined time in response to the output signal of timer 9. As a result, gas flows from the gas supply source 10 through the path of the regulator 7, the electromagnetic valve 8, the solvent vapor generation unit 60, the electromagnetic valve 66, and the nozzle 5, and the gas including the vapor of the solvent 63 of the correction paste 4 flows from the nozzle 5. Be injected.

  When selection signal φS is at “L” level, electromagnetic valve 67 is opened for a predetermined time in response to the output signal of timer 9. Thereby, gas flows from the gas supply source 10 through the path of the regulator 7, the electromagnetic valve 67, and the nozzle 5, and a gas that does not contain the vapor of the solvent 63 of the correction paste 4 is injected from the nozzle 5.

  In this modified example, any one of the gas containing the vapor of the solvent 63 of the correction paste 4 and the gas not containing the vapor of the solvent 63 of the correction paste 4 can be selectively injected. It is possible to control the amount of the solvent 63 that is absorbed by the correction paste 4 and to prevent the solvent 63 from being excessively absorbed by the correction paste 4. For example, when correcting a plurality of open defect portions 2a using the same through-hole 3a, basically, a gas not containing the vapor of the solvent 63 is injected to correct each open defect portion 2a, and a predetermined number of open defects The open defect portion 2a may be corrected by injecting a gas containing the vapor of the solvent 63 every time the portion 2a is corrected or every time a predetermined time elapses.

  FIG. 21 is a sectional view showing a modification of the third embodiment. In FIG. 21, in this modified example, when a plurality of open defect portions 2a are corrected using the same through hole 3a, correction paste 4 is applied to one open defect portion 2a and then corrected to the next open defect portion 2a. At the time of waiting until the paste 4 is applied, the solvent vapor generation unit 70 is disposed in the vicinity of the opening on the lower side of the through hole 3a of the film 3.

  The solvent vapor generation unit 70 is obtained by injecting the solvent 63 of the correction paste 4 into a container 71 having an upper end opened close to the back surface of the film 3. In order to prevent the solvent 63 from spilling out of the container 71, the solvent 63 may be gelled, or a sheet 72 having absorbed the solvent 63 may be placed in the container 71.

  When the high-boiling solvent 63 is used, the solvent 63 does not immediately evaporate even when the container 71 remains open. However, when the highly volatile solvent 63 (for example, toluene) is used, the container 71 It is preferable to make the opening of the opening as small as possible, or to provide an openable / closable lid (not shown).

  In this modification, since the vapor of the solvent 63 is supplied to the correction paste 4 in the through hole 3a during standby, the correction paste 4 is dried even when a plurality of open defect portions 2a are corrected using the same through hole 3a. Can be prevented, and correction can be made without degrading the correction quality. Note that the vapor amount of the solvent 63 may be controlled by heating the container 71 with a heater (not shown).

  FIG. 22 is a diagram showing a configuration of a pattern correction apparatus that executes this modification example, and is a diagram to be compared with FIG. In FIG. 22, in this pattern correction device, the gas injection device 6 is mounted on the Z-axis stage 32, and the solvent vapor generation unit 70 is fixed at a predetermined position of the XYZ stage 37. The XYZ stage 37 moves the film supply unit 38 in the XYZ directions. The XYZ stage 37 moves the film supply unit 38 at the time of application to place the through hole 3a of the film 3 above the open defect portion 2a, and moves the film supply unit 38 to move the through hole 3a at the standby time. It arrange | positions on the solvent vapor generation part 70. FIG. Since other configurations and operations are the same as those of the pattern correction apparatus of FIG. 13, the description thereof will not be repeated.

  According to the pattern correction method and the pattern correction apparatus described so far, even when the substrate surface has irregularities, it is possible to easily correct the open defect portion generated in the pattern on the substrate surface without damaging the substrate. Therefore, in addition to the correction of the open defective portion of the wiring of the TFT array substrate 41 of the liquid crystal panel, the defective portion of the substrate of various flat panel displays can be corrected.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  1 substrate, 2 wiring, 2a open defect part, 3 film, 3a through hole, 3b, 3c groove, 4 correction paste, 4a, 4A correction pattern, 5 nozzle, 5a injection port, 6 gas injection device, 7 regulator, 8, 66, 67 Electromagnetic valve, 9 timer, 10 gas supply source, 11 baking apparatus, 12, 13, 20-22 fixed roller, 14 film supply reel, 15 take-up reel, 16 observation optical system, 17 objective lens, 18 laser, 19 shielding plate, 20 coating needle, 30 surface plate, 31 XY stage, 31a X axis stage, 31b Y axis stage, 32 Z axis stage, 33, 37 XYZ stage, 34 coating unit, 35 container, 35a hole, 36 chuck, 38 film supply unit, 41 TFT array substrate, 42 glass substrate, 43 gate Line, 43a gate electrode, 44, 45 gate insulating film, 46 pixel electrode, 47 semiconductor film, 48 drain line, 48a drain electrode, 48b open defect, 49 source electrode, 50 TFT, 51 protective film, 60, 70 solvent Steam generating unit, 61, 71 container, 62 piping, 63 solvent, 64 filter, 65, 72 sheet, 68 selector.

Claims (21)

A pattern correction method for correcting a defective portion of a fine pattern formed on a substrate,
A first step of forming a through-hole having a shape corresponding to the defect in the film;
A second step of supplying a correction liquid to a range including at least the through hole on the surface of the film;
A third step of confronting the back surface of the film and the substrate in a state where the defect portion and the through hole are aligned;
Gas is injected into a range including at least the through hole on the surface of the film to bring the opening of the through hole on the back surface side of the film into contact with the substrate, and the correction liquid is passed through the through hole to the defect portion. A fourth step of applying to
And a fifth step of stopping the gas injection and peeling the film from the substrate.   The pattern correction method according to claim 1, wherein the pressure of the gas and the injection time in the fourth step are preset.   3. The film according to claim 1, wherein in the third step, the film is arranged at a certain tension at least within a range facing the substrate and substantially parallel to the substrate. 4. Pattern correction method. In the fourth step, the gas is injected, the film is deformed to bring the opening of the through hole into contact with the substrate,
4. The pattern according to claim 1, wherein in the fifth step, the gas injection is stopped, and the film is peeled off from the substrate by a restoring force of the film. 5. How to fix.   5. The pattern correction method according to claim 1, wherein in the fourth step, the gas is jetted substantially perpendicularly to the film toward the through hole. 6.   6. The pattern correction method according to claim 1, wherein, in the third step, the gap is set to be smaller than an amount by which the film is deformed downward by the gas injection.   In a state where the correction liquid is applied in a range including the through hole on the surface of the film, the correction is performed using the same through hole by repeating the third to fifth steps while changing the position on the substrate. The pattern correction method according to claim 1, wherein the liquid is applied a plurality of times.   In the first step, one or more of the through holes are formed, and when the plurality of through holes are formed, a closed region is not formed by the plurality of through holes. The pattern correction method according to any one of claims 1 to 7. There are a plurality of adjacent defect portions on the substrate,
In the first step, a plurality of the through holes are formed in the film according to the plurality of defect portions,
In the second step, the correction liquid is supplied to a range including the plurality of through holes on the surface of the film,
In the third step, with the gap between the back surface of the film and the substrate in a state where the plurality of defective portions and the plurality of through holes are aligned,
In the fourth step, gas is injected into a range including the plurality of through holes on the surface of the film to bring the openings of the through holes on the back side of the film into contact with the substrate, and through the through holes. The pattern correction method according to claim 1, wherein the correction liquid is applied to a corresponding defective portion.   The pattern correction method according to claim 1, wherein in the first step, a mark for confirming a position of the through hole is formed on the surface of the film.   In the first step, the upper surface of the film is irradiated with laser light to form the through-hole, and the range including the through-hole is irradiated with weak power laser light to remove dust, and then the film is removed. The pattern correction method according to claim 1, wherein the lower surface of the film is inverted to be the surface of the film. In the first step, a groove for holding the correction liquid is formed on the surface of the film,
The pattern correction method according to claim 1, wherein in the second step, the correction liquid is also supplied into the groove.   The pattern correction method according to claim 1, wherein the gas contains a solvent vapor of the correction liquid.   In the fourth step, any one of a gas containing the solvent vapor of the correction liquid and a gas not containing the vapor of the correction liquid solvent is selectively injected. The pattern correction method according to any one of claims 1 to 12.   And a sixth step of supplying a vapor of the solvent of the correction liquid to a range including at least the through hole on the back surface of the film, and suppressing drying of the correction liquid supplied in the second step. The pattern correction method according to claim 1, wherein:   The pattern correction method according to claim 1, further comprising a seventh step of baking the correction liquid applied to the defect portion. A pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate,
Film supply means for supplying a film;
A through hole forming means for forming a through hole having a shape corresponding to the defect in the film;
Correction liquid supply means for supplying correction liquid to a range including at least the through hole on the surface of the film;
Position adjustment means for adjusting the relative position of the film and the substrate by facing the back surface of the film and the substrate with a gap therebetween,
Gas is injected into a range including at least the through hole on the surface of the film to bring the opening of the through hole on the back surface side of the film into contact with the substrate, and the correction liquid is passed through the through hole to the defect portion. A pattern correction apparatus comprising: gas jetting means for applying to the gas.   The pattern correction apparatus according to claim 17, wherein the gas includes a solvent vapor of the correction liquid. And a selection means for selecting one of the gas containing the solvent vapor of the correction liquid and the gas not containing the vapor of the solvent of the correction liquid,
The pattern correction apparatus according to claim 17, wherein the gas ejection unit ejects the gas selected by the selection unit.   Furthermore, it comprises solvent vapor supply means for supplying the vapor of the solvent of the correction liquid to a range including at least the through-hole on the back surface of the film and suppressing drying of the correction liquid supplied by the correction liquid supply means. The pattern correction apparatus according to claim 17, wherein   21. The pattern correction apparatus according to claim 17, further comprising a baking unit that bakes the correction liquid applied to the defect portion.

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