JP5182754B2 - Pattern forming method and pattern forming apparatus - Google Patents

Description

  The present invention relates to a pattern forming method and a pattern forming apparatus, and more particularly to a method and apparatus for forming a fine pattern having a width of 10 μm or less on a substrate.

  In recent years, a pattern formed on a glass substrate or a film substrate has been miniaturized, and recently, it may be necessary to form a pattern having a width of 10 μm or less. As a method for forming such a fine pattern, there is a method using an ink jet or a film mask.

  For example, a substrate is placed close to the tip of a fine nozzle to which a solution is supplied, and a high voltage is applied between an electrode provided on the nozzle and a counter electrode arranged to face the nozzle, There is a method of forming a fine pattern by ejecting fine droplets from a front end to a predetermined position on a substrate surface (see, for example, Patent Documents 1 and 2).

Also, the film is irradiated with laser light to form a through hole, the film is pressed onto the substrate side so as to cover the through hole with a coating needle with the paste attached to the tip, and the paste is applied to the substrate through the through hole. There is also a method of applying (see, for example, Patent Document 3).
JP 2004-134596 A Japanese Patent Laid-Open No. 2004-165588 JP 2008-15340 A

  However, in a conventional inkjet pattern formation method, a low-viscosity paste (for example, a toluene-based solvent) using a low boiling point solvent (for example, a toluene-based solvent) is used to discharge droplets onto a substrate and suppress the spread of the droplets upon landing. Liquid material) is used. For this reason, the nozzle is easily clogged, and it is necessary to periodically clean the nozzle.

  In addition, when the pattern to be formed is a wiring, a metal nano paste containing nanoparticles such as gold and silver as a paste is used. However, since the metal weight ratio is low in the low-viscosity paste, overstrike has been required to increase the film thickness of the pattern.

  Furthermore, in order to eject droplets smaller than 1 Pl (picoliter), there is an electrostatic type ink jet, but in a state where the gap between the substrate and the nozzle is kept minute, the electrode provided in the nozzle is opposed to it. There is a problem that it is necessary to apply a high voltage between the counter electrode and the counter electrode, and the control becomes complicated.

These problems are solved by a method of forming a fine pattern using a film and a coating needle. However, in this method, when the film is pressed to the substrate side with the application needle, the flat surface at the tip of the application needle is very small, so that the surface pressure increases even if the movable part including the application needle is light. For example, even if the weight of the movable part including the application needle is as light as about 10 g, if the diameter of the flat surface at the tip of the application needle is 50 μm, the surface pressure is about 5 kg / mm ² .

  For this reason, when a fine pattern is formed on a substrate having minute irregularities, it is assumed that the protrusions of the substrate are crushed or the surface pressure is locally increased. In addition, it may be difficult to make the film around the through hole come into contact with the substrate due to the protrusions, so that a part of the fine pattern is missing or the paste protrudes.

  Therefore, a main object of the present invention is to provide a pattern forming method and a pattern forming apparatus capable of easily forming a fine pattern of 10 μm or less even when the substrate surface is uneven.

The pattern forming method according to the present invention is a pattern forming method for forming a fine pattern on a substrate, and includes a first step of forming a through hole having a shape corresponding to the fine pattern in the film, and at least penetrating the surface of the film. A second step of supplying a liquid material for forming a fine pattern in a range including the holes, a third step of confronting the back surface of the film and the substrate with a gap, and at least through holes on the surface of the film. the gas injected into area including, by the pressure of the injected gas, extruded liquid material Rutotomoni through hole to deform the film by contacting the opening portion of the rear surface side of the through-holes of the film substrate on the back side of the film a fourth step of applying onto a substrate Te, the injection of gas is stopped, and a fifth step of peeling off the film by the restoring force of the film from the substrate And wherein the Mukoto.

  Preferably, the method further includes a sixth step of curing or baking the liquid material applied on the substrate.

Preferably, the gas pressure and the injection time in the fourth step are set in advance.
Also preferably, in the third step, the film is disposed substantially parallel to the substrate under a constant tension at least in a range facing the substrate.

  Preferably, in the fourth step, gas is jetted substantially perpendicularly to the film toward the through hole.

  Preferably, in the third step, the gap is set smaller than an amount by which the film is deformed downward by gas injection.

  Also preferably, in a state where the liquid material is applied in a range including the through holes on the surface of the film, the third to fifth steps are repeated while changing the position on the substrate, and the liquid material is formed using the same through holes. Apply several times.

  Preferably, in the first step, one or more through holes are formed, and when a plurality of through holes are formed, a closed region is not formed by the plurality of through holes.

  Preferably, in the first step, a mark for confirming the position of the through hole is formed on the surface of the film.

  Preferably, in the first step, the upper surface of the film is irradiated with a laser beam to form a through hole, and a region including the through hole is irradiated with a weak power laser beam to remove dust, and then the film is inverted. Let the lower surface of the film be the surface of the film.

  Preferably, in the first step, a groove for holding the liquid material is formed on the surface of the film, and in the second step, the liquid material is also supplied into the groove.

The pattern forming apparatus according to the present invention is a pattern forming apparatus for forming a fine pattern on a substrate, and includes a film supply means for supplying a film and a through hole for forming a through hole having a shape corresponding to the fine pattern in the film. A hole forming means, a liquid material supply means for supplying a liquid material for forming a fine pattern in a range including at least through-holes on the surface of the film, a back surface of the film and the substrate facing each other with a gap therebetween, and Position adjusting means for adjusting the relative position of the substrate, and gas is injected into a range including at least the through hole on the surface of the film, and the film is deformed by the pressure of the injected gas to open the through hole on the back side of the film the was coated on a substrate by extruding the liquid material in Rutotomoni through hole is brought into contact with the substrate on the back side of the film, to stop the injection of gas, Phil Characterized in that it comprises a gas injection means which Ru is peeled film from the substrate by the restoring force of the.

  Preferably, liquid material processing means for curing or baking the liquid material applied on the substrate is further provided.

  In the pattern forming method and the pattern forming apparatus according to the present invention, a through-hole having a shape corresponding to a fine pattern is formed in a film, and a liquid material is supplied to a range including at least the through-hole on the surface of the film. And a gas material is sprayed to a range including at least a through hole on the surface of the film to bring the opening of the through hole on the back surface side of the film into contact with the substrate, and the liquid material is transferred to the substrate through the through hole. It is applied to the top, and the gas injection is stopped to peel the film from the substrate. Therefore, even when the surface of the substrate is uneven, the liquid material can be applied without strongly pressing the substrate locally, and a fine pattern of 10 μm or less can be easily formed.

  FIG. 1 is a cross-sectional view showing a pattern forming method according to an embodiment of the present invention. In FIG. 1, in this pattern forming method, a film 2 is arranged in parallel with a predetermined gap G <b> 1 with respect to the surface of the substrate 1. A constant tension is applied to the film 2. The gap G1 is set in a range in which the film 2 can be deformed and brought into contact with the substrate 1, and is, for example, about 10 μm to 200 μm. The film 2 is, for example, a thin polyimide film. The width | variety of the film 2 should just be sufficient width | variety to use as a mask, for example, is about 5 mm-15 mm. The film 2 is, for example, a part of a roll film that is slit to the width. The thickness of the film 2 is preferably such that the bottom can be seen through, for example, about 10 to 25 μm.

  The film 2 is formed with through holes 2a having substantially the same shape as the pattern to be formed. The through hole 2a is formed by laser irradiation. As the laser, a pulse laser such as a YAG third harmonic laser, a YAG fourth harmonic laser, or an excimer laser is used.

  A paste 3 is supplied in advance to a minute range including the through hole 2 a on the upper surface of the film 2. The supply of the paste 3 is performed using a dispenser or a coating needle. However, if the paste 3 has a low viscosity, an ink jet method can be used, and the supply method of the paste 3 is not limited.

  Above the film 2, the nozzle 4 is disposed substantially perpendicular to the surface of the film 2. The injection port 4a at the tip of the nozzle 4 is disposed to face the through hole 2a with a predetermined gap G2. The gap G2 is set such that the tip of the nozzle 4 does not come into contact with the paste 3, and is, for example, about 1 mm to 2 mm.

  As shown in FIG. 2, a gas injection device 5 for supplying gas to the nozzle 4 is provided. The gas injection device 5 includes a regulator (R) 6 that adjusts the pressure of the gas, an electromagnetic valve (V) 7 connected between the outlet of the regulator 6 and the base end of the nozzle 4, and an opening time of the electromagnetic valve 7. And a timer (T) 8 for controlling. A gas supply source (G) 9 is connected to the inlet of the regulator 6. As the gas, for example, nitrogen gas is used, but compressed air may be used as long as the paste 3 used does not deteriorate. The electromagnetic valve 7 may be controlled by a control computer or PLC (Programmable Logic Controller) without providing the timer 8.

  After adjusting the gas pressure and the gas injection time optimally, the electromagnetic valve 7 is opened only for the time set by the timer 8, and the gas is injected from the nozzle 4 into the range including the through hole 2a from above the film 2. The film 2 in a range including the through holes 2 a comes into contact with the substrate 1 by the gas injection. If the gas injection is stopped, as shown in FIG. 3, the film 2 in a range including the through hole 2a is separated from the substrate 1 by the restoring force of the film 2, and the substrate 3 has a pattern 3a having substantially the same shape as the through hole 2a. Is formed. The gas injection time is, for example, 1 second or less. Further, the inner diameter of the nozzle 4 is, for example, about 0.1 mm to 1 mm so that the film 2 can be brought into contact with the substrate 1 within a range including at least the through hole 2a. The gas pressure is set to about 0.1 to 0.3 MPa, for example.

  Thus, since gas is injected to the range containing the through-hole 2a, the paste 3 in the through-hole 2a is pushed by gas, and is extruded to the back surface side (board | substrate 1 side) of the film 2. FIG. For this reason, the film thickness of the pattern 3a can be increased.

  If the width of the through hole 2a is smaller than the film thickness of the film 2, the force for holding the paste 3 in the through hole 2a tends to increase. For this reason, if the film 2 is simply brought into contact with the substrate 1, the paste 3 in the through hole 2a remains in the through hole 2a as it is, and the film thickness of the pattern 3a formed on the substrate 1 becomes very thin. . For example, a film including a through hole 2a is formed after a through hole 2a having a width of 5 μm is formed in a film 2 having a thickness of 12.5 μm and a gold nano paste 3 having a viscosity of 10 Pa · s is attached to the tip of the application needle 19. When the pattern is formed by pressing 2 to the substrate 1 side, the film thickness of the pattern 3a is as thin as about 0.4 μm (see Patent Document 3).

  On the other hand, in the present invention, the paste 3 in the through hole 2a is pushed out to the back surface side (substrate 1 side) of the film 2 by the pressure of the injected gas, so that the film thickness of the pattern 3a can be increased. It becomes. As described above, after the through hole 2a having a width of 5 μm is formed in the film 2 having a thickness of 12.5 μm and the gold nano paste 3 having a viscosity of 10 Pa · s is supplied onto the film 2 including the through hole 2a When the pattern was formed by gas injection, the film thickness of the pattern 3a could be increased to about 1.5 μm.

  Thereafter, as shown in FIG. 4, the pattern 3 a is cured using the curing apparatus 10 to obtain a cured pattern 3 </ b> A. Curing methods include heat curing, ultraviolet curing, baking, and the like, and are selected according to the type of paste 3. For example, when firing is required, a YAG second continuous wave laser or the like is used as the curing processing apparatus 10.

  When the pattern 3A is a wiring, a metal nano paste of gold or silver is used as the paste 3. Since pattern formation is performed using gas injection, it is possible to use paste 3 having a higher viscosity than pattern formation by ink jet or dispenser. For example, gold nanopaste having a viscosity of about 1 Pa · s to 20 Pa · s is used. It is also possible. If the paste 3 has a high viscosity, the metal weight ratio is also high, so that the pattern film thickness after firing can be made thicker and the resistance can be lowered. Moreover, if the high-viscosity paste 3 is used, the paste 3 can be prevented from being scattered around when the gas is jetted, and a pattern 3A having a shape substantially equal to the shape of the through hole 2a can be formed.

  In this pattern forming method, since the film 2 is brought into contact with the substrate 1 by jetting the gas, the film 2 can be pressed with a uniform pressure. For this reason, even when the surface of the substrate 1 is uneven, the film 2 can be brought into contact with the surface, and the paste 3 can be prevented from protruding into the gap between the film 2 and the substrate 1. Further, even when there is a protrusion on the surface of the substrate 1, no concentrated load is applied to the protrusion, so that the substrate 1 is not deformed or damaged.

  Further, as shown in FIG. 3, even after the pattern is formed, the amount of the paste 3 supplied so as to cover the through-hole 2a is not much different from that before application, and therefore the pattern is formed a plurality of times using the same hole 2a. Is also possible. In this case, the formation time of the through-hole 2a and the supply time of the paste 3 are shortened, and the tact time of pattern formation can be shortened.

  If the same through-hole 2a is applied several times, the paste 3 on the through-hole 2a is reduced, the width of the pattern 3a formed on the substrate 1 is reduced, and the film thickness of the pattern 3a is reduced. Since it becomes thinner, the paste 3 may be periodically replenished on the through-holes 2a, or the paste 3 may be replenished as needed by looking at the shape of the pattern 3a.

  In addition, when pattern formation is performed a plurality of times using the same through-hole 2a, it is assumed that the use time becomes long and the paste 3 is dried and the pattern formation becomes unstable. Therefore, the paste 3 containing a high boiling point solvent is used. To prevent drying.

  Further, when the pattern is repeatedly formed close to the position where the pattern has already been formed, it is assumed that the existing pattern 3a adheres to the back surface of the film 2 and the existing pattern 3a is crushed or the back surface of the film 2 is contaminated. Therefore, in such a case, it is desirable to dry or cure the existing pattern 3a.

  FIG. 5 is a cross-sectional view showing the process of opening the through hole 2 a in the film 2. In FIG. 5, the film 2 is disposed substantially horizontally with a certain tension by two fixed rollers 11 and 12, and a film supply reel 13 and a take-up reel 14 are disposed on both sides thereof. The observation optical system 15 is positioned above the film 2 supported by the two fixed rollers 11 and 12. An objective lens 16 is provided at the lower end of the observation optical system 15, and a laser 17 is provided on the observation optical system 15.

  Laser light emitted from the laser 17 is collected by the observation optical system 15 and the objective lens 16 and applied to the film 2, and a through hole 2 a in the shape of a laser spot is opened in the film 2. The shape of the laser spot is determined by, for example, a variable slit (not shown) built in the laser 17. As the laser 17, a pulse laser such as a YAG third harmonic laser, a YAG fourth harmonic laser, or an excimer laser is used.

  The step of opening the through-hole 2a in the film 2 is performed by the film 2 alone so that the laser beam does not strike the substrate 1 at a position away from the substrate 1 or the substrate 1. For example, the film 2 is processed by being horizontally supported by the left and right fixed rollers 11 and 12 at a position deviated from above the substrate 1. If the through hole 2a is opened above the substrate 1, the substrate 1 is not directly irradiated with laser light, and the shielding plate 18 is placed on the film 2 so that dust generated by laser ablation does not fall on the substrate 1. You may arrange | position below.

  When the formation of the through hole 2a is completed, dust generated during laser ablation is scattered on the surface of the film 2. In order to remove dust, a step of irradiating a low-power laser beam over a wide range around the through hole 2a may be included. At this time, it is possible to remove only dust by switching to the YAG second harmonic laser and irradiating with a low-power laser beam. In this case, a laser 17 that can selectively emit one of two types of laser light, that is, laser light for opening the through-hole 2a and laser light for removing dust is used. Good.

  FIG. 6 is a diagram illustrating a process of supplying the paste 3 to a minute range including the through hole 2 a formed in the film 2. Any method may be used to supply the paste 3, but here, a method of supplying using the application needle 19 will be described as an example. In addition, the position of the board | substrate 1 and the through-hole 2a in the XY direction shall be adjusted to the position where pattern formation is desired beforehand.

  The paste 3 is attached to the tip of the coating needle 19 whose tip is flattened, the coating needle 19 is lowered from above the through-hole 2a and the tip is brought into contact with the film 2, and the paste 3 is applied to a minute range including the through-hole 2a. Supply. At this time, the film 2 supported by the two fixed rollers 11 and 12 so that the film 2 is bent downward by the load when the application needle 19 contacts the film 2 and the through hole 2a and the substrate 1 do not contact with each other. The gap G3 with the substrate 1 is set larger than the deformation amount of the film 2.

  Hereinafter, various modified examples of this embodiment will be described. In the method for supporting the film 2 shown in FIGS. 5 and 6, since the back surface of the film 2 faces the substrate 1, the edge of the through hole 2 a on the back surface side of the film 2 comes into contact with the substrate 1 when gas is injected. It is also conceivable that burrs or the like are generated at the edge of the through-hole 2a on the back side of the film 2 and the side surface shape of the pattern 3a is disturbed.

  7A and 7B show a film arrangement method that can eliminate the influence of burrs on the edge of the through hole 2a. In this film arrangement method, two fixed rollers 20 and 21 are arranged on the left and right, and a fixed roller 22 is arranged above them. The film 2 is supplied obliquely from the upper left in the drawing, supplied to the right through the fixed roller 22, folded to the left by the fixed roller 21, and passed through the fixed roller 20 to the left in the drawing. It is wound up obliquely upward. Therefore, the film 2 is folded left and right and stretched in parallel up and down. In this state, the surface of the film 2 between the fixed rollers 21 and 22 is irradiated with laser light to form a through hole 2a. At this time, a shielding plate 18 wider than the film 2 may be disposed between the upper and lower films 2 so that dust generated by laser ablation does not fall on the substrate 1.

  In FIG. 7A, the film 2 is stretched up and down, and when the through-hole 2a is opened in the upper film 2, the lower film 2 is shielded because the film 2 exists below it. When the plate 18 can be used, the shielding plate 18 can be omitted.

  Further, when the formation of the through hole 2a is completed, dust generated during laser ablation is scattered on the surface of the film 2. In order to remove dust, a low-power laser beam may be irradiated over a wide range around the through hole 2a. At this time, by switching to the YAG second harmonic laser and irradiating a wide range around the through hole 2a with a low-power laser beam, it is possible to remove only dust, and new dust is generated. This can be prevented. As the laser 17, a laser that can selectively emit one of two types of laser light, that is, laser light for opening the through-hole 2 a and laser light for removing dust is preferably used.

  Next, as shown in FIG. 7B, the film 2 is wound in the R direction (clockwise direction) in the figure, and the film 2 is inverted so that the surface (laser irradiation surface) of the film 2 faces downward. . If it does in this way, the edge of the through-hole 2a of the back surface side of the film 2 may face up, and the surface of the film 2 can be made to oppose the board | substrate 1. FIG. Therefore, it is possible to eliminate the influence of burrs on the edge of the through hole 2a, and the end surface of the pattern 3a can be made uniform.

  Further, the number of through holes 2a opened in the film 2 is not limited to one, and if a plurality of through holes 2a are formed, a plurality of patterns 3a may be formed at a time by one gas injection. Is possible. For example, in the modified example of FIG. 8A, a plurality (three in the figure) of belt-like through-holes 2a are formed in parallel at regular intervals. In this case, if the paste 3 is supplied so as to cover all the through holes 2a and the pattern is formed by the method shown in FIGS. 1 to 4, a plurality of patterns 3a can be formed by one gas injection.

  Moreover, in the modification of FIG.8 (b), three strip | belt-shaped through-holes 2a are combined and a U-shaped through-hole is formed. Also in this case, the same through-hole 2a can be repeatedly used to form a pattern while changing the position. The plurality of through holes 2a are formed so as not to form a closed region with them. In this way, it is possible to form a plurality of fine patterns 3 a without forming a large hole in the film 2.

  Further, the relative alignment between the through hole 2a and the substrate 1 can be performed using the respective position coordinates. However, when the same through hole 2a is used to repeatedly form a pattern, the through hole 2a is a paste. In some cases, the through-hole 2a cannot be directly observed. Therefore, in the modified example of FIG. 9, a mark for confirming the position of the through hole 2 a is formed on the film 2. That is, a plurality of (four in the figure) grooves 2b are formed by irradiating a laser beam to a position near the through-hole 2a and not covered with the paste 3, and the plurality of grooves 2b are used for confirming the position of the hole 2a. As a landmark. It is preferable that the intersection of the extension lines of the plurality of grooves 2b be the center point of the through hole 2a. The groove 2b may be formed together when the through hole 2a is formed by laser ablation.

  Further, in the modified example of FIG. 10, a groove 2 c for holding the paste 3 is formed in a range including the through hole 2 a of the film 2. The groove 2c is formed at a depth that does not penetrate the film 2, and holds the paste 3 supplied to the range including the through hole 2a. The groove 2c increases the amount of the paste 3 that can be held and suppresses the scattering of the paste 3 during gas injection.

  When the shape of the pattern 3a is changed or when the through hole 2a is clogged, the film 2 is wound up to form a new through hole 2a, and the pattern is formed by the method described above.

  FIG. 11 is a diagram showing a configuration of a pattern forming apparatus that executes the pattern forming method shown in FIGS. In FIG. 11, the pattern forming apparatus includes a gantry type XY stage 31 mounted on a surface plate 30. The XY stage 31 includes an X-axis stage 31a that moves in the left-right direction in the figure, and a portal-shaped Y-axis stage 31b that can move in a direction perpendicular to the paper surface. The X-axis stage 31a is provided with a Z-axis stage 32 that can move in the vertical direction. On the Z-axis stage 32, the laser 17, the observation optical system 15, the objective lens 16, the curing processing apparatus 10, and the XYZ stage 33 are fixed.

  The XYZ stage 33 includes two X axes that can move independently, and a coating unit 34 and a nozzle 4 for gas injection are mounted on each of them. The application unit 34 includes an application needle 19 and a container 35, and the paste 3 is injected into the container 35. In the bottom of the container 35, a hole 35a through which the application needle 19 can pass is formed. During standby, the tip of the application needle 19 is immersed in the paste 3 in the container 35. At the time of application, the tip of the application needle 19 penetrates the hole 35a and projects below the container 35. As a result, the paste 3 adheres to the tip of the application needle 19.

  A chuck 36 is provided on the surface plate 30. The substrate 1 is placed on the chuck 36 and fixed to the chuck. An XYZ stage 37 is provided on the X-axis stage 31a. The XYZ stage 37 moves the film supply unit 38 in the XYZ directions. The film supply unit 38 is configured to retract upward using a linear motion bearing (not shown) as a guide. For this reason, even if the film supply unit 38 contacts the substrate 1, no impact is generated on the substrate 1.

  The coating unit 34 is controlled together with the XYZ stage 33 and supplies the paste 3 to a range including the through hole 2 a of the film 2. The XYZ stage 37 moves the film supply unit 38 and arranges the film 2 immediately below the objective lens 16. In addition, when the through hole 2a is formed in the film 2, the XYZ stage 37 adjusts the pattern formation position by aligning the through hole 2a and the substrate 1, and also adjusts the gap between the film 2 and the substrate 1. Also used.

  According to the pattern forming method and the pattern forming apparatus described so far, a thin pattern can be easily formed on the substrate surface even when the substrate surface is uneven. Therefore, for example, a simple pattern can be formed on a glass substrate or a heat-resistant film. The conductive pattern can be used as wiring. Further, by taking advantage of the fact that fine pattern formation is possible, it is possible to correct a defect in a substrate of a flat panel display, for example, to correct a disconnection defect in a wiring of a TFT (thin film transistor) array substrate of a liquid crystal panel.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is sectional drawing which shows the pattern formation method by one Embodiment of this invention. It is sectional drawing which shows the gas injection process of the pattern formation method shown in FIG. It is sectional drawing which shows the state after completion | finish of the gas injection process shown in FIG. It is sectional drawing which shows the process of hardening the pattern shown in FIG. It is sectional drawing which shows the through-hole formation process of the pattern formation method shown in FIG. It is sectional drawing which shows the paste supply process of the pattern formation method shown in FIG. It is a figure which shows the example of a change of embodiment. It is a figure which shows the other example of a change of embodiment. It is a figure which shows the further another example of a change of embodiment. It is a figure which shows the further another example of a change of embodiment. It is a figure which shows the structure of the pattern formation apparatus which performs the pattern formation method shown in FIGS.

Explanation of symbols

  1 substrate, 2 film, 2a through hole, 2b, 2c groove, 3 paste, 3a, 3A pattern, 4 nozzle, 4a injection port, 5 gas injection device, 6 regulator, 7 electromagnetic valve, 8 timer, 9 gas supply source, DESCRIPTION OF SYMBOLS 10 Curing apparatus, 11, 12, 20-22 Fixed roller, 13 Film supply reel, 14 Take-up reel, 15 Observation optical system, 16 Objective lens, 17 Laser, 18 Shield plate, 19 Coating needle, 30 Surface plate, 31 XY stage, 31a X axis stage, 31b Y axis stage, 32 Z axis stage, 33, 37 XYZ stage, 34 coating unit, 35 container, 35a hole, 36 chuck, 38 film supply unit.

Claims (13)

A pattern forming method for forming a fine pattern on a substrate,
A first step of forming a through-hole having a shape corresponding to the fine pattern in the film;
A second step of supplying a liquid material for forming the fine pattern in a range including at least the through hole on the surface of the film;
A third step of confronting the back surface of the film and the substrate with a gap therebetween;
Gas is injected into a range including at least the through hole on the surface of the film, and the film is deformed by the pressure of the injected gas so that the opening of the through hole on the back surface side of the film is brought into contact with the substrate. a fourth step of applying onto the substrate the liquid material Rutotomoni the through-hole extruded on the back side of the film,
The injection of gas is stopped, characterized in that it comprises a fifth step of peeling the film by the restoring force of the film from the substrate, the pattern forming method.   The pattern forming method according to claim 1, further comprising a sixth step of curing or baking the liquid material applied on the substrate.   3. The pattern forming method according to claim 1, wherein the gas pressure and the jetting time in the fourth step are preset. 4.   4. The method according to claim 1, wherein, in the third step, the film is provided with a constant tension at least in a range facing the substrate and is arranged substantially parallel to the substrate. 5. The pattern formation method in any one. Wherein in the fourth step, characterized by injecting a substantially vertically with said gas to said film toward said through hole, a pattern forming method according to any one of claims 1 to 4. Wherein in the third step, the gap, the film by injection of the gas is set smaller than the amount of deformed downward, the pattern forming method according to any one of claims 1 to 5. While the liquid material is applied to the surface of the film including the through hole, the third to fifth steps are repeated while changing the position on the substrate, and the liquid is formed using the same through hole. wherein the material to the multiple applications, the pattern forming method according to any one of claims 1 to 6. In the first step, one or more of the through holes are formed, and when the plurality of through holes are formed, a closed region is not formed by the plurality of through holes. to pattern forming method according to any one of claims 1 to 7. In the first step, and forming a mark for checking the position of the through hole on the surface of the film, a pattern forming method according to any one of claims 1 to 8. In the first step, the upper surface of the film is irradiated with laser light to form the through-hole, and the range including the through-hole is irradiated with weak power laser light to remove dust, and then the film is removed. wherein the lower surface of the inverts the film and the surface of the film, a pattern forming method according to claims 1 to 9. In the first step, a groove for holding the liquid material is formed on the surface of the film,
In the second step, also characterized by supplying the liquid material in the groove, a pattern forming method according to any one of claims 1 to 1 0. A pattern forming apparatus for forming a fine pattern on a substrate,
Film supply means for supplying a film;
A through hole forming means for forming a through hole having a shape corresponding to the fine pattern in the film;
A liquid material supply means for supplying a liquid material for forming the fine pattern in a range including at least the through hole on the surface of the film;
Position adjustment means for adjusting the relative position of the film and the substrate by facing the back surface of the film and the substrate with a gap therebetween,
Gas is injected into a range including at least the through hole on the surface of the film, and the film is deformed by the pressure of the injected gas so that the opening of the through hole on the back surface side of the film is brought into contact with the substrate. It was applied onto the substrate the liquid material Rutotomoni the through-hole extruded on the back side of the film, stopping the injection of the gas, Ru is peeled off the film from the substrate by the restoring force of the film A pattern forming apparatus comprising: a gas injection unit. Further characterized in that it comprises a liquid material processing means for curing or baking process the liquid material coated on the substrate, the pattern forming apparatus according to claim 1 2.

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