JP2007227021A - Pattern correction method and pattern correction device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern correction method and a pattern correction device capable of laminating the deposition layer of a correction liquid on a defective part without heating. <P>SOLUTION: In the pattern correction device 1, ultraviolet ray α is radiated to a defective part 13a of an electrode 13 formed on a substrate 14 from an ultraviolet ray irradiator 6 while the mist of ultraviolet curable correction liquid 20 is jetted to the defective part 13a from a coating nozzle 30, so that fine particles of correction material are deposited on the defective part 13a to form a deposition layer 33. So, no application nozzle 30 is clogged due to setting of the correction 20 at the tip of the coating nozzle 30 under radiant heat from the heated defective part 13a or the like. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a pattern correction method and a pattern correction apparatus, and more particularly to a pattern correction method and a pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate. More specifically, the present invention relates to a pattern correcting method and a pattern correcting apparatus for correcting an open defect of an electrode, a rib (partition) defect of a plasma display, etc., which occur in a flat panel display manufacturing process.

  In recent years, with the increase in size and definition of flat panel displays such as plasma displays, liquid crystal displays, and EL displays, the probability of defects in electrodes and ribs on the glass substrate has increased, and the yield has been improved. Therefore, a method for correcting the defect has been proposed.

  For example, on the rear glass substrate of the plasma display, ribs having a height of about 150 μm and a width of about 60 to 100 μm are formed at a pitch of several hundreds of μm. If a part of this rib is missing, apply the correction paste to the application needle and apply it to the defect, and stack the correction paste while firing to prevent the correction paste from dripping, and protrude in the rib width direction. The cut portion is scraped off with a laser cut and a scratch needle, and the raised portion higher than the normal height of the rib is flattened by the squeegee function to correct the rib (for example, see Patent Document 1).

Electrodes are formed on the surface of the glass substrate of the liquid crystal display. When this electrode is disconnected, the conductive paste adhered to the tip of the application needle is applied to the disconnected portion, and applied multiple times while shifting the application position in the length direction of the electrode to correct the electrode (for example, Patent Documents) 2).
JP 2000-299059 A JP-A-8-292442

  However, in the method of correcting the rib, the coating needle reciprocates between the rib defect portion and the paste tank many times to fill the rib defect portion with the correction paste, so that the larger the defect portion, the longer the application time. There is a problem. In addition, a cutting laser part and a scratch mechanism that removes the correction paste that protrudes from the rib width, a mechanism that sucks out the foreign matter generated by this, and a mechanism that reshapes the correction part that has risen from the normal part using a squeegee mechanism are required The configuration becomes complicated.

  Also, in the method of correcting the electrode, since the application needle is replenished between the electrode disconnection portion and the paste tank many times and the application paste is applied while replenishing the conductive paste, the longer the disconnection portion, the longer the time required for correction. become longer. In addition, since the paste is applied in a shape in which circular application portions are arranged in one row, it is necessary to perform laser cutting processing on the portion protruding from the width of the electrode after application. Furthermore, it is difficult to draw a fine line of 20 μm or less by a coating method using a coating needle.

  Therefore, the inventor of the present application proposes a pattern correction method in which a mist-like correction liquid is sprayed from a coating nozzle onto a defective portion while the substrate is heated in a range including the defective portion, and the correction liquid is deposited on the defective portion to be corrected. (For example, see Japanese Patent Application No. 2005-50766). In this method, since the correction liquid can be injected while replenishing, the defective portion can be corrected quickly compared to the conventional case where the application needle reciprocates between the defective portion and the paste tank many times. . Further, since the mist of the correction liquid is converged and sprayed onto the defective portion, it can be drawn smaller than the coating nozzle diameter, and a deposited layer of 20 μm or less can be easily drawn. Therefore, a mechanism for removing the deposited layer protruding from the defective portion can be made unnecessary, and the apparatus configuration can be simplified.

  However, in this pattern correction method, since the mist-like correction liquid is ejected from the application nozzle while heating the substrate, the correction liquid may be dried at the tip of the application nozzle by the radiant heat from the substrate, and the application nozzle may be clogged.

  In addition, when the substrate to be corrected is weak to heat, it cannot be heated, and its application may be limited.

  Therefore, a main object of the present invention is to provide a pattern correction method and a pattern correction apparatus capable of laminating a deposition layer of a correction liquid on a defective portion without heating.

  The pattern correction method according to the present invention is a pattern correction method for correcting a defective portion of a fine pattern formed on a substrate, and applies a UV curable correction liquid to the defective portion, and the correction applied to the defective portion. The step of irradiating the liquid with ultraviolet light and repeatedly forming a deposition layer of the correction liquid on the defect portion is performed, and a plurality of deposition layers are laminated on the defect portion.

  Preferably, the correction liquid is sprayed onto the defective part while irradiating the defective part with ultraviolet rays, thereby forming a correction liquid deposition layer on the defective part.

  Preferably, the area including the defective portion is covered with a film, and the atomized correction liquid is sprayed onto the defective portion while irradiating the area including the hole formed in the portion corresponding to the defective portion of the film with ultraviolet rays. By doing so, a deposition layer of the correction liquid is formed in the defect portion, and after the plurality of deposition layers are laminated, the film is removed.

  The pattern correction apparatus according to the present invention is a pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate, and includes an ultraviolet irradiation means for irradiating the defective portion with ultraviolet light, and an ultraviolet curable correction liquid. And depositing the correction liquid on the defective portion to correct the defective portion, and the depositing means is sprayed with the spraying portion for misting the correction liquid. And a head unit that converges the correction liquid and ejects it from the application nozzle.

  Preferably, it further includes a light shielding means that is provided between the ultraviolet irradiation means and the coating nozzle and blocks ultraviolet rays.

  Further preferably, it further comprises a film driving means for covering a range including the defective portion with a film, and a laser for irradiating a portion corresponding to the defective portion of the film with a laser beam to form a hole.

  In the pattern correction method and the pattern correction apparatus according to the present invention, the ultraviolet curable correction liquid is applied to the defective portion, and the correction liquid applied to the defective portion is irradiated with ultraviolet light to form a correction liquid deposition layer on the defective portion. As a result, the deposition layer of the correction liquid can be laminated on the defective portion without heating the defective portion.

[Embodiment 1]
FIG. 1 is a diagram showing an overall configuration of a pattern correction apparatus according to Embodiment 1 of the present invention. In FIG. 1, a pattern correction apparatus 1 includes an observation optical system 2 that observes the surface of a substrate, a monitor 3 that displays an observed image, and a laser beam that is irradiated through the observation optical system 2 to cut unnecessary portions. A laser curing unit 4 and a correction material for defect correction made into fine particles of several μm or less and dispersed in a solvent are sprayed onto the defective part by spraying the ultraviolet curable correction liquid into a mist and depositing the fine particles on the defective part. A fine particle deposition device 5, an ultraviolet irradiation unit 6 that irradiates the defective portion with ultraviolet rays in a spot manner to cure the mist-like correction liquid, an image processing unit 7 that recognizes the defective portion, and a host computer 8 that controls the entire device. And a control computer 9 for controlling the operation of the device mechanism section. In addition, an XY stage 10 that moves a substrate having a defective portion in the XY direction (horizontal direction), a chuck portion 11 that holds the substrate on the XY stage 10, and the observation optical system 2 and the particle deposition apparatus 5 are moved in the Z direction. A Z stage 12 that is moved in the (vertical direction) is provided. In some cases, a substrate heating unit 6A that partially heats the substrate within a range including the defective portion from above the substrate may be provided.

  FIG. 2 is a cross-sectional view showing a main part of the pattern correction apparatus shown in FIG. A fine pattern having a defective portion 13 a, for example, the substrate 14 on which the electrode 13 is formed, is fixed to the chuck portion 11, and the chuck portion 11 is moved in the XY direction by the XY stage 10.

  The fine particle deposition apparatus 5 has a spraying portion 15 for making a correction material used for correction into a fine particle of several μm or less, and uniformly dispersing it in a solvent to liquefy an ultraviolet curable correction liquid, and a mist The pressure reducing part 16 for reducing the pressure of the flow of the corrected liquid, the heating part 17 for heating the reduced mist-like correction liquid, and the heated mist-like correction liquid are converged and ejected to the defect part 13a. And a head portion 18 for depositing fine particles on the defect portion 13a.

  A correction liquid 20 is injected into the container 19 of the spray unit 15. When correcting the defective portion 13a of the electrode 13, a silver paste, a gold paste, a copper paste, a palladium paste, or a transparent electrode material using metal fine particles (such as nanoparticles) as the correction liquid 20 is diluted. used. Alternatively, a metal complex solution or a metal colloid may be used as the correction liquid 20. In addition, when correcting a defective portion (rib defect defect) of the plasma display, a correction liquid 20 in which a low-melting glass powder, which is a rib material, is uniformly dispersed in a solvent is used. Further, an ultraviolet curing agent is added to the correction liquid 20, and the correction liquid 20 can be cured by irradiating ultraviolet rays.

  A spray nozzle 21 is provided in the center of the container 19. The lower part of the spray nozzle 21 is immersed in the correction liquid 20. When atomizing gas (for example, nitrogen gas) is supplied to the spray nozzle 21 from the outside of the container 19, the atomized gas passes through the small diameter (about 0.3 mm) through-hole 21 a and the jet outlet 21 b in the upper part of the spray nozzle 21. Is erupted. At this time, the flow rate of the atomizing gas at the jet nozzle 21b is increased and the atmospheric pressure is lowered from the surroundings. The correction liquid 20 is also scattered around the jet outlet 21b and atomized. This principle is the same as the principle of normal spraying, and is the application of Bernoulli's principle. Large mist particles fall into the container 19 or collide with the inner wall surface of the container 19 and remain in the container 19, and only fine mist particles are sent to the decompression unit 16.

  As the atomizing gas, an inert gas such as nitrogen gas is preferably used so that the correction liquid 20 is not oxidized, but air may be used as long as the correction liquid 20 does not oxidize. Further, the atomizing gas is used to make the correction liquid 20 in an atomized state. However, if the correction material in the correction liquid 20 is an ultrafine particle such as a submicron, an atomizer using an ultrasonic vibrator may be used. I do not care.

  Further, when the fine particles of the correction material in the correction liquid 20 are likely to precipitate over time, a stirrer is placed in the container 19 and a stirring device (magnetic stirrer) is installed at the bottom of the container 19 to correct the correction liquid. 20 may be constantly stirred.

  The decompression unit 16 is the same as a generally known virtual impactor, and classifies the mist particles of the correction liquid 20. Small mist particles are removed here, and the pressure of the mist particle flow is reduced. The decompression unit 16 includes a nozzle unit 22, a gas collection unit 23, an exhaust pipe 24, and an outer pipe 25. The nozzle portion 22 and the air collecting portion 23 are opposed to each other while maintaining a certain gap 26. Of the mist particles ejected from the nozzle unit 22, mist particles having a high flow velocity or heavy mist particles are supplied to the next stage through the air collecting portion 23, while mist particles having a low flow velocity, light mist particles, or the like are exhausted. It is discharged by an exhaust pump (not shown) through 24.

  The heating unit 17 includes a pipe 27 that connects the air collecting unit 23 and the next stage. A heater 28 and a temperature sensor 29 are attached to the outer peripheral portion of the pipe 27, and the pipe 27 is controlled so as to reach a set temperature, and has a function of heating fog particles. By heating the mist particles, the flow and scattering when the mist particles adhere to the defect portion 13a are suppressed. The heater 28 is covered with a heat insulating member (not shown). Further, depending on the correction liquid 20, the heating unit 17 can be omitted as shown in FIG.

  Returning to FIG. 2, the head unit 18 covers the periphery of the mist particles with a sheath gas (for example, nitrogen gas), converges the flow of the mist particles, and mists from the coating nozzle 30 at the lower end of the head unit 18 toward the defect portion 13 a. Eject particles. The inner diameter of the jet nozzle of the coating nozzle 30 is about 100 to 200 μm, and the flow of the mist particles can be converged to about 1/10 of the inner diameter of the jet nozzle by the sheath gas.

  The shutter 31 receives the mist particles ejected from the coating nozzle 30 so that the mist particles are not ejected onto the substrate 14 before the defect correction is performed. At the start of correction, the shutter 31 is opened to correct the defect. Simultaneously with the completion of the correction, the shutter 31 is moved between the tip of the coating nozzle 30 and the substrate 14 to receive fog particles. The shutter 31 may have a function of sucking the fog particles ejected from the application nozzle 30. The light shielding plate 32 is provided between the ultraviolet irradiation unit 6 and the coating nozzle 30 so as to prevent the ultraviolet light α from hitting the tip of the coating nozzle 30, and any shape can be used as long as the light can be shielded.

  Next, a method for using this pattern correction apparatus will be described. 4A is a view showing an open defect portion 13a of the electrode 13 formed on the surface of the substrate 14, and FIG. 4B is a view showing a process in the middle of correcting the open defect portion 13a. (C) is a figure which shows the state which correction of the defect part 13a was completed.

First, the XY stage 10 and the Z stage 12 are driven to position the tip of the coating nozzle 30 above a predetermined position of the electrode 13 on one side of the defective portion 13a. next,
While the shutter 31 is closed, the mist-like correction liquid 20 is sprayed from the tip of the coating nozzle 30 and the XY stage 10 is driven while the ultraviolet irradiation unit 6 irradiates the ultraviolet light α of a minute spot directly below the coating nozzle 30. Then, the coating nozzle 30 and the substrate 14 are relatively moved, and the tip of the coating nozzle 30 is moved in the direction of the defect portion 13a.

  When the tip of the coating nozzle 30 reaches a predetermined position on one side of the defective portion 13a, the shutter 31 is opened. Thereby, the correction liquid 20 sprayed from the tip of the application nozzle 30 is deposited on the electrode 13 and the defect portion 13a, and is cured by receiving the ultraviolet ray α. When the correction liquid 20 is cured, the metal particles in the correction liquid 20 are brought into close contact with each other to increase the conductivity, and the conductive deposition layer 33 is formed. When the tip of the application nozzle 30 reaches a predetermined position on the other side of the defective portion 13a, the shutter 31 is closed, and the spray of the mist-like correction liquid 20 and the irradiation of the ultraviolet rays α are stopped.

  In this manner, the defect portion 13a of the electrode 13 can be corrected in a non-contact manner while keeping the distance between the tip of the coating nozzle 30 and the surface of the substrate 14 at a constant distance (around 5 mm). Moreover, since the ultraviolet ray α is blocked by the light shielding plate 32 and is not irradiated to the tip of the coating nozzle 30, the correction liquid 20 is not cured at the tip of the coating nozzle 30 and the coating nozzle 30 is not clogged. Further, since heating is not performed, correction is possible even when the substrate 14 is vulnerable to heat.

  In order to keep the line width of the deposition layer 32 of the correction liquid 20 constant, the flow rate of the atomizing gas supplied to the spray unit 15, the exhaust flow rate of the decompression unit 16, the flow rate of the sheath gas of the head unit 18, etc. are set to optimum values. Need to manage.

  If the film thickness of the deposited layer 32 is insufficient, the plurality of deposited layers 32 may be stacked by reciprocating the tip of the coating nozzle 30 above the defect portion 13a. In addition, when the line width of the deposited layer 32 is larger than the line width of the electrode 13 or fine particles adhere to portions other than the electrode 13 and the defect portion 13a, the unnecessary portion is laser-cut using the laser portion 4. Also good. When the substrate 14 has heat resistance, the deposited layer 32 may be further baked by the substrate heating unit 6A, or the entire substrate 14 may be baked again in a separate process furnace.

  FIGS. 5A to 5C are diagrams showing a method of correcting the rib defect defect portion 35a in which a part of the rib 35 formed on the surface of the rear glass substrate 34 of the plasma display is missing.

  In FIG. 5A, the position of a rib chip defect portion 35a where a part of the rib 35 formed on the surface of the rear glass substrate 34 of the plasma display is missing is detected. Next, the tip of the coating nozzle 30 is disposed at a predetermined position above the rib chip defect 35a, and as shown in FIG. 5B, the ultraviolet ray α is applied to the defect 35a in a spot-like manner using the ultraviolet irradiation unit 6. The mist-like correction liquid 20 is ejected from the coating nozzle 30 to the defective portion 35a while irradiating the substrate 34, and the substrate 34 and the coating nozzle 30 are moved relative to each other by the XY stage 10 so that the defective rib portion 35a is defective. A fine particle deposition layer 36_1 is formed.

  Subsequently, the XY stage 10 is reciprocated to stack a plurality of deposited layers 36_2 to 36_n. Finally, as shown in FIG. 5C, the rib chip defect 35a is the top surface of the rib 35 or more. Laminate until.

  After the completion of the lamination, the deposited layer 36 laminated on the rib chip defect 35a is partially baked by the substrate heating unit 6A, or the entire back glass substrate 34 is baked in a furnace. Thereafter, as shown in FIGS. 6A and 6B, the excess protruding portion of the deposited layer 36 is polished by the tape polishing unit 40 until the height becomes equal to the normal rib top surface 35b.

  The tape polishing unit 40 may be mounted on the pattern correction apparatus 1 shown in FIG. The tape polishing unit 40 is mounted on the sub-Z stage 46, and the sub-Z stage 46 is mounted on, for example, the lower end of the Z stage 12. A laser displacement meter (not shown) is adjacent to the tape polishing unit 40, for example, on the Z stage 12. Installed. The sub-Z stage 46 moves the tape polishing unit 40 in the Z direction (vertical direction). The laser displacement meter includes a laser device that emits laser light to an object (for example, the rib top surface 35b), an optical sensor that detects laser light reflected by the object, and an object based on a detection result of the optical sensor. And a signal generation unit that outputs a signal indicating the distance of.

  The tape polishing unit 40 includes a supply reel 42 that supplies the polishing tape 41, a take-up reel 43 that winds up the used polishing tape 41, a polishing head pin 44 that presses the polishing tape 41 against an object to be polished, and a polishing head pin 44. And a polishing head 45 that holds the same, and is mounted on the sub-Z stage 46. The polishing head 45 supports the polishing head pin 44 so as to be able to advance and retreat up and down, and applies a preload to the polishing head pin 44 via an elastic member (not shown). The vertical position of the polishing head pin 44 is detected by a sensor (not shown).

  As shown in FIG. 6A, while the tape polishing unit 40 is gradually lowered by the sub-Z stage 46, the back glass substrate 34 is reciprocated in the extending direction of the ribs 35 by the XY stage 10, and the polishing tape 41 is moved. The deposited layer 36 is polished while being wound at a constant speed, and the polishing process is finished when the rib top surface 35b is polished as shown in FIG. 6B. The deposited glass layer 36 may be polished by relatively moving the back glass substrate 34 in a direction orthogonal to the extending direction of the ribs 35. Further, the determination as to whether or not the polishing to the rib top surface 35b has been completed may be made by measuring using a laser displacement meter during the polishing, or the rib top surface 35b and the rib top surface 35b in advance before starting the polishing. It is also possible to perform polishing after obtaining the difference from the top surface of the deposited layer 36 with a laser displacement meter, detect the position of the polishing head pin 44 with a sensor (not shown), and determine the end of polishing based on the detection result. .

  As described above, in the first embodiment, the ultraviolet curing type mist-like correction liquid 20 is applied from the coating nozzle 30 to the defective portions 13a and 35a while irradiating the defective portions 13a and 35a with the ultraviolet rays α. To deposit the fine particles of the correction material on the defect portions 13a and 35a to form the deposited layers 33 and 36. Therefore, while the mist-like correction liquid 20 is being sprayed from the application nozzle 30, the defective portions 13a, 35a and the like are not heated, so that the correction liquid 20 is generated at the tip of the application nozzle 30 by the radiant heat from the defective portions 13a, 35a. It hardens and the application nozzle 30 is not clogged. Further, even when the substrates 14 and 34 are vulnerable to heat, the deposited layers 33 and 36 can be formed.

  In this pattern correction apparatus 1, the deposition layers 33 and 36 are drawn by moving the substrates 14 and 34 by the XY stage 10. However, the deposition is performed by moving the fine particle deposition apparatus 5 without moving the substrates 14 and 34. Layers 33 and 36 may be drawn.

  In addition, as the XY stage 10, various stage types such as a uniaxial stage stacked in the XY direction and a gantry system in which the substrate is fixed and the X axis and the Y axis are separated and driven are considered. The stage is not limited.

[Embodiment 2]
In the first embodiment, the fine particle deposition apparatus 5 is used to converge and spray the mist-like correction liquid 20 onto the defective portions 13a and 35a to form the deposited layers 33 and 36. However, the deposition layers 33 and 36 are also deposited by other coating methods. Layers 33 and 36 can be formed.

  7A to 7D are diagrams showing a pattern correction method according to the second embodiment of the present invention. In the second embodiment, the rib missing defect portion 35 a in which a part of the rib 35 formed on the surface of the rear glass substrate 34 of the plasma display is missing is corrected using the coating needle 47.

  That is, in FIG. 7A, the position of a rib chip defect portion 35a in which a part of the rib 35 formed on the surface of the rear glass substrate 34 of the plasma display is missing is detected. Next, as shown in FIG. 7B, the ultraviolet curable correction liquid 20 adhered to the tip of the application needle 47 is thinly applied to the rib defect portion 35a. Next, as shown in FIG. 7C, the correction liquid 20 applied to the rib defect defect portion 35a is irradiated with ultraviolet rays α from the ultraviolet irradiation section 6, and the correction liquid 20 is cured to form a deposited layer 36_1. By repeating this, a plurality of deposition layers 36_2 to 36_n are stacked, and finally, as shown in FIG. 7D, the deposition layer 36 that completely fills the defect portion 35a is formed.

  In this way, when the defect portion 35a is large and deep, the correction solution 20 drips and stacking is difficult only by attaching the correction solution 20 to the defect portion 35a. It is possible to further form a deposition layer on the deposition layer 36_1. In this case, if the ultraviolet irradiation is performed after the application needle 47 is retracted, the correction liquid 20 does not adhere to the tip of the application needle 47 and harden.

[Embodiment 3]
FIGS. 8A to 8C are diagrams showing a pattern correction method according to the third embodiment of the present invention. In the third embodiment, the film 50 is used as a mask, and the open defect portion 13a of the electrode 13 formed on the surface of the substrate 14 is corrected. As the film 50, for example, a polyimide film of about 10 μm is used.

  First, as shown in FIG. 8A, the film 50 is brought into close contact with the surface of the substrate 14 in a range including the defect portion 13a, and laser light (for example, a third harmonic of a YAG laser) is directed from the laser portion 4 toward the defect portion 13a. Wave), and a hole 50a is formed in a portion of the film 50 corresponding to the defective portion 13a. At this time, the hole 50a having the same shape and size as the defect portion 13a may be formed, the defect portion 13a may be shaped into the same shape as the hole 50a of the film 50, or the hole 50a may be opened only in the film 50. The laser power may be adjusted to open a hole 50a longer than the defect 13a. Further, when damage to the peripheral portion of the defective portion 13a or the substrate 14 is caused by the laser light irradiation, the film 50 having the holes 50a previously formed may be aligned with the defective portion 13a.

  Next, as shown in FIG. 8B, as in FIGS. 4A to 4C, the correction liquid is applied from the coating nozzle 30 to the defective portion 13a while irradiating the defective portion 13a with the ultraviolet ray α. The 20 mist particles are converged and ejected, and the XY stage 10 is driven to move the coating nozzle 30 from one end side to the other end side of the defect portion 13a. Thereby, the deposition layer 33 is formed on the surface of the defect portion 13a and the film 50 on both sides thereof.

  Next, as shown in FIG. 8C, the film 50 is peeled from the substrate 14. At this time, since the correction liquid 20 is cured to form the deposition layer 33, the correction liquid 20 does not reattach to a normal portion of the substrate 14. In addition, since the portions other than the defect portion 13a are masked by the film 50, it is possible to draw the deposition layer 33 that is thinner than the diameter at which the fog particles of the correction liquid 20 are converged and jetted. Note that the plurality of deposition layers 13 may be stacked on the defect portion 13a by reciprocating the coating nozzle 30 above the defect portion 13a.

  FIG. 9 is a diagram showing the configuration of a pattern correction apparatus for carrying out the pattern correction method shown in FIGS. In FIG. 9, in this pattern correction apparatus, the XY stage has a gantry structure in which an X stage 51 and a Y stage 52 are separated and move independently, and the substrate 14 is fixed to the chuck portion 11. A sub-Y stage 53 that can move in parallel with the Y-stage 52 is fixed to the Y-stage 52, and a sub-Z stage 54 that can advance and retreat in the vertical direction is mounted on the sub-Y stage 53. On the auxiliary Z stage 54, a film supply reel 55 around which the film 50 is wound and a take-up reel 56 around which the film 50 is wound are arranged on the left and right sides of the substrate 14. The film 50 only needs to be wide enough to cover the vicinity of the defective portion 13a, and for example, a film having a thickness of about 10 mm is used.

  The sub-Y stage 53 and the sub-Z stage 54 follow the position of the defective portion 13a so that the film 50 can be brought into contact with and attached to the defective portion 13a. Is not required. For example, the use of an air cylinder is also conceivable. In addition, the film 50 is retracted so that the film 50 does not interfere when the substrate 14 is put in and out. The sub-Y stage 53 has a role of moving the film 50 directly below the observation optical system 2 or moving the film 50 away from the observation optical system 2, and a short movement distance is sufficient.

  When the film 50 is brought into contact with and attached to the defective portion 13a, first, the reels 55 and 56 are driven by a motor (not shown), and the film 50 is suspended in a U shape so that the film 50 does not touch the substrate 14. When the sub-Z stage 54 is lowered in this state, the film 50 is thin and has the property of following the substrate 14, so the film 50 contacts and adheres to the surface of the substrate 14 in a range including the defect portion 13 a. FIG. 9 shows a state in which the film 50 is in contact with and attached to the substrate 14 on one side in the horizontal direction. If the film 50 contacts and adheres to the board | substrate 14, the defect part 13a can be corrected as shown to Fig.8 (a)-(c). What is necessary is just to raise the sub Z stage 54, when peeling the film 50 from the defect part 13a.

  As shown in FIG. 10, a secondary Y stage 54 that can move parallel to the Y stage 52 may be disposed on the base. In this case, the movement range of the secondary Y stage 54 is approximately the same as that of the Y stage 52. Further, the arrangement method of the film 50 is not limited to the method shown here, and the film supply reel 55 and the take-up reel 56 may be fixed to the Z stage 12.

  In the third embodiment, the fine particle deposition apparatus 5 is used as a means for filling the defect solution 13 with the correction liquid 20, but the filling means is not limited to this, and for example, as shown in FIG. As shown in FIG. 11, the correction liquid 20 may be applied to the defective portion 13a from above the hole 50a using the application needle 47, or the correction liquid 20 may be applied to the hole using the microdispenser 57 as shown in FIG. You may apply | coat to the defect part 13a from 50a. Moreover, the method of flying the droplet of the correction liquid 20 from a nozzle like an inkjet may be used. In these cases, after the correction liquid 20 is applied to the defect portion 13a, the range including the defect portion 13a is irradiated with ultraviolet rays α, and after the correction liquid 20 is cured, the film 50 is peeled off.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a perspective view which shows the whole structure of the pattern correction apparatus by Embodiment 1 of this invention. It is sectional drawing which shows the principal part of the pattern correction apparatus shown in FIG. It is sectional drawing which shows the other structure of the fine particle deposition apparatus shown in FIG. It is a figure which shows the usage method of the pattern correction apparatus shown in FIG. It is another figure which shows the usage method of the pattern correction apparatus shown in FIG. It is a figure which shows the method of tape-polishing the deposit layer shown in FIG. It is a figure which shows the pattern correction method by Embodiment 2 of this invention. It is a figure which shows the pattern correction method by Embodiment 3 of this invention. It is a figure which shows the structure of the pattern correction apparatus for enforcing the pattern correction method shown in FIG. It is a figure which shows the structure of the other pattern correction apparatus for enforcing the pattern correction method shown in FIG. FIG. 10 is a diagram illustrating a modification example of the third embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Pattern correction apparatus 2 Observation optical system 3 Monitor 4 Cutting laser part 5 Fine particle deposition apparatus 6 Ultraviolet irradiation part 6A Substrate heating part 7 Image processing part 8 Host computer 9 Control computer 10 XY Stage, 11 Chuck part, 12 Z stage, 13 Electrode, 13a Open defect part, 14 Substrate, 15 Spraying part, 16 Decompression part, 17 Heating part, 18 Head part, 19 Container, 20 Correction fluid, 21 Spray nozzle, 21a Through Hole, 21b Spout, 21c Suction port, 22 Nozzle part, 23 Air collecting part, 24 Exhaust pipe, 25 Outer pipe, 26 Clearance, 27 Pipe, 28 Heater, 29 Temperature sensor, 30 Coating nozzle, 31 Shutter, 32 Light shielding plate 33, 36, 36_1 to 36_n Deposition layer, 34 Back glass substrate, 35 rib, 35a rib Chip defect portion, 40 tape polishing unit, 41 polishing tape, 42 supply reel, 43 take-up reel, 44 polishing head pin, 45 polishing head, 46 secondary Z stage, 50 film, 51 X stage, 52 Y stage, 53 secondary Y stage 54 Sub-Z stage, 55 Film supply reel, 56 Take-up reel, 57 Micro dispenser.

Claims (6)

A pattern correction method for correcting a defective portion of a fine pattern formed on a substrate,
A step of applying a UV curable correction liquid to the defective portion and irradiating the correction liquid applied to the defective portion with ultraviolet light to form a deposition layer of the correction liquid on the defective portion is repeated. A pattern correction method, comprising depositing the deposited layer on the defect portion.   2. The deposited layer of the correction liquid is formed on the defect portion by spraying the correction liquid atomized while irradiating the defect portion with the ultraviolet rays. The pattern correction method described in 1. Covering a range including the defective portion with a film, and irradiating the ultraviolet light to a range including a hole opened in a portion corresponding to the defective portion of the film, the mist-like correction liquid is applied to the defective portion. By spraying, a layer of the correction liquid is formed on the defect portion,
The pattern correction method according to claim 2, wherein the film is removed after laminating a plurality of the deposited layers. A pattern correction apparatus for correcting a defective portion of a fine pattern formed on a substrate,
An ultraviolet irradiation means for irradiating the defect with ultraviolet rays;
A deposition means for correcting the defective portion by spraying the ultraviolet curable correction liquid in the form of a mist and spraying the corrected liquid on the defective portion;
The said depositing means includes a spray unit that makes the correction liquid in a mist form, and a head part that converges the mist-like correction liquid and ejects it from an application nozzle.   The pattern correction apparatus according to claim 4, further comprising a light shielding unit that is provided between the ultraviolet irradiation unit and the coating nozzle and blocks the ultraviolet ray. Furthermore, film driving means for covering the range including the defective portion with a film,
The pattern correction apparatus according to claim 4, further comprising a laser device that irradiates a portion of the film corresponding to the defective portion with laser light to open a hole.

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