TWI262306B - Pattern substrate defect correction method and apparatus and pattern substrate manufacturing method - Google Patents

Pattern substrate defect correction method and apparatus and pattern substrate manufacturing method Download PDF

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TWI262306B
TWI262306B TW093108259A TW93108259A TWI262306B TW I262306 B TWI262306 B TW I262306B TW 093108259 A TW093108259 A TW 093108259A TW 93108259 A TW93108259 A TW 93108259A TW I262306 B TWI262306 B TW I262306B
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film
substrate
defect
transfer layer
layer
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TW093108259A
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Chinese (zh)
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TW200508583A (en
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Haruhiko Kusunose
Naoki Awamura
Akira Hatase
Takuji Ishikawa
Kiyoshi Ogawa
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Lasertec Corp
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306Details
    • G02F1/1309Repairing; Testing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136259Repairing; Defects

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)
  • Laser Beam Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Pattern substrate defect correction method and apparatus capable of stably correcting defects and a pattern substrate manufacturing method are provided. The pattern defect correction apparatus of this invention is one for correcting defects on a patterned substrate, comprising a stage (7) for loading a substrate (6), a short pulse laser light source (1), a beam forming mechanism (2) for forming the short pulse laser light from the short pulse laser light source (1), and an air jet means (13) for making a film (5) to approach the substrate (6). The film (5) and the defect are removed at the same time by irradiating the film (5) with the laser light. A film reel (8) is then moved to make a film 5 having a colored layer (51) to approach the substrate (6) so as to transfer a pattern to the substrate.

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1262306 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種圖案基板之缺陷修正方法及缺陷修 正裝置及圖案基板製造方法。 一 【先前技術】 在液晶顯示器用彩色濾光片之製造步驟中,為改盖戸 率而修正彩色濾、光片基板中之缺陷。該缺陷修正方法有將 光阻(resist)加到針的前端並滴在缺陷部分之方法。然而,' 該方法會因光阻之黏度而使滴下量發生變化,因而難以進 行滴下量及修正精度的控制,而難以穩定地進行修正。而 且,有必要進行乾燥步驟及長時間之修正,而造成生產性 變低。 又,其他缺陷修正方法有薄膜轉印方法。該方法係使 具著色層之薄膜密接在彩色濾、光片基板之不具有著色層的 白缺陷部分’而從薄膜轉印著色層以進行缺陷之修正^如 專利文獻1)。 以第14圖說明該方法之問題點。第14圖係顯示彩色 濾光片基板之構成的剖面放大圖。第14圖係顯示彩色濾光 片基板之-部分的構成。彩色濾光片用之基板6通常以矩 陣狀設有黑矩陣71(以下稱BM)。且在應間設有紅、綠、 監之著色層70。該著色層70之一部分係重疊在BM71上, 因而形成具凹凸的構造。例如,在樹脂黑矩陣構造的彩色 濾光片中,BM及著色層分別為1//m程度,因此表面之凹 凸約為1 # m。因此,薄膜會部分附著在著色層7〇之凸部, 315540 5 1262306 厚無正確地附著在位於凹部的缺陷部分。 法使薄膜完全p付莫六# 有媒 附者在者色層的白缺陷部分之情形, 穩定地將著色芦埶_ £ 而難Μ 、 巴層熱轉印而修正缺陷。又,在以往之_印 法中因將相轉印在基板,故形成具有與基板側之 層不同的材質之多層構造。如此,由與基板側之著色 同之材質形成晝素,有對顯示品質造成影響之虞。θ (專利文獻丨)日本特開平11 —230861號公報、 【發明内容】 具有無法穩定修正圖案基 在以往之缺陷修正方法中 板之缺陷的問題。 本發明之缺陷修正裂置係用以去除經圖案化之基板上 之缺陷的缺陷修正褒置,具備有:發出脈衝雷射之脈衝雷 射先源(例如本發明實施例中的短脈衝雷射光源1);以及與 上述基*板相向設置之薄膜(例如本發明實施例中之薄膜/、 )“藉由將來自上述脈衝雷射光源之脈衝雷射光照射在 上述薄膜,而利用雷射去除(laser abrasi〇n)方式大略同時去 膜的一部分與缺陷。因此,能以簡單的構成去除 圖案基板上之缺陷。 在上$缺陷修正裝置中,藉由照射脈衝雷射光源,亦 可使上述薄膜變薄,再利用雷射去除方式大略同時去除上 述薄膜的一部分與缺陷。 在ϋ夫1¾修正I置中,更具備使上述薄膜變更為具 有可轉印至上述基板之轉印層(例如本發明實施例中之著色 層51)之薄膜的薄膜變更機構(例如本發明實施例中之薄膜 315540 6 1262306 捲軸旋轉機構14等),並將上述脈衝雷射光照射在具有上 ,轉:層之薄膜,而將上述轉印層轉印在上述基板。因此, 能以簡單之構成穩定修正白缺陷與黑缺陷。 在上述缺陷修正裝置令,亦可將上述轉印層轉印在已 除去上述缺陷的部位。因此,可迅速地進行缺陷修正。 本發明之缺陷修正裝置係在上述缺陷修正裝置中,更 具備使依上述基板上要修正的圖案之修正液附著在基板的 貝噶,並使上述修正液從已去除上述薄膜的部分附著在基 板而進行修正者。因此,可正確地修正圖案。 土 本發明之缺陷修正裝置係在上述缺陷修正裝置中,更 具備具有可移動至已去除上述薄膜的部位之位置之轉印層 的薄膜,並將上述轉印層從已去除上述薄膜的部分轉印在 上述基板而進行缺陷修正。 本發明之缺陷修正裝置係將圖案轉印在經圖案化之基 板的缺陷部分而修正缺陷之缺陷修正裝置,具備有:在與 上述基板相向之面具有可轉印至該基板之轉印層,且接^ 上述基板的薄膜;以及發出照射在與上述缺陷部分對應之 薄膜的脈衝雷射光之脈衝雷射光源,且將來自上述脈衝雷 射光源之脈衝雷射光照射在具有上述轉印層的薄膜,而^ 轉印層轉印在上述基板之缺陷部分者。藉此,可正確地將 圖案形成在缺陷部分,以進行穩定之修正。 上述缺陷修正裝置之較佳實施例係上述基板為具有遮 光膜、及形成在上述遮光膜上的光阻圖案之光罩用基板, 而修正上述光阻圖案的缺陷者。因此,可進行光罩用基板 315540 7 1262306 之圖案的修正。 本發明之缺陷修正裝置係將經圖案化之基板的缺陷予 2修正之缺陷修正裝置,具備有··與上述基板相向設置之 薄膜,發出照射在上述薄膜以在上述薄膜設置開口部之脈 衝雷射光的脈衝雷射光源;以及可移動至上述開口部之位 置^使依上述基板上要修正之圖案的修正液附著在基板 的貝紫,且將上述修正液從已去除上述薄膜的部分附著在 基板而進订修正者。藉此,可精度佳地使圖案附著,而可 正確地進行缺陷修正。 本發明之缺陷修正裝置係將經圖案化之基板的缺陷予 2修正之缺陷修正裝置,具備有··與上述基板相向設置之 薄膜’·發出照射在上述薄膜以在上述薄膜設置開口部之脈 衝雷射光的脈衝雷射光源;以及具有可移動至與上述開口 ,對應之位置之轉印層的薄膜(例如本發明之實施例中的 薄膜18),且透過上述開口部將上述轉印層轉印在上述基 板而修正缺陷者。藉此,能以簡單之構成正確地修正缺陷。 上述缺陷修正裝置之較佳的一例係更具備可移動至與 上述開口部對應之位置之加熱塊(例如本發明之實施例中 的=熱塊20),並藉由上述加熱塊將具有上述轉印層之薄 膜壓著至上述基板而將轉印層予以轉印。藉此,能以簡單 之構成密接性良好地將轉印層予以轉印。 在上述缺陷修正裝置中,上述加熱塊可更具備對應於 上,開口部之凸部,並藉由上述凸部壓著具有上述轉印層 之薄膜與上述基板兩者。因此可提高密接性。 315540 8 1262306 在上述缺陷修正裝置中,亦可具備用以固定設有上述 開口部之薄膜的固定機構。藉此,可防止開口部之偏移。 在上述缺陷修正裝置中,具有上述轉印層之薄膜最好 更具備吸收上述脈衝雷射光之吸收層(例如本發明之實施 例中的膨脹層23),並將脈衝雷射光照射在上述吸收層, 而將上述轉印層轉印在上述基板。藉此,能有效率地將轉 印層予以轉印。 在上述缺陷修正裝置中,最好在上述吸收層與上述轉 印層之間具備:在上述轉印層轉印在上述基板後,使上述鲁 时層從上述轉印層分離的分離層。藉此,可防止吸收層 附著在基板,而可正確地修正缺陷。 本發明之缺陷修正裴置係在上述缺陷修正裝置中,照 射上述脈衝雷射光’以去除已去除上述薄膜之部分的周邊 邛之上述修正液。藉此,可正確地修正圖案。 士上述缺陷修正裝置中’最好更具備有將氣體喷出至 上述薄膜或具上述轉印層之薄膜的喷出機構,以藉由上述 噴出機構使上㈣膜或具上述轉印層之_接近上述基 板。藉此,可精密度佳地使基板與薄膜接近。 土 在上述缺陷修正裝置中’最好更具備有用以使來自上 述脈衝雷射光源之脈衝雷射光成形的光束成形機構(例如 本發明之實施例中的光束成形機構2),且將藉上述光束成 形機構而成形之脈衝雷射光照射在上述薄膜或具上 層之薄膜。藉此,可精度佳地修正缺陷。 在上述缺陷修正裝置中,最好更具備有:在與來自上 315540 9 1262306 述脈衝雷射光源之脈衝雷射光大略相同之軸上將光照射在 上述基板之觀察用光源;及用以檢測照射在上述基板之上 述觀察用光源發出的光之檢測機構。藉此,可正確地將光 如射在缺陷檢測部位。 具上述轉印層之薄膜更具有上述觀察用光源的光可透 過之透明層(例如本發明之實施例中的透明層55),亦可更 具備用以送出具上述轉印層之薄膜以使照射上述光之位置 從上述透明層變更至上述轉印層的薄膜捲軸(例如本發明 之實施例中的薄膜捲轴8)。藉此,能以簡單構成防止x缺陷 檢測時及缺陷修正時之位置偏移。 “—在上述缺陷修正裝置中,可更具備用以選擇來自上述 硯察用光源之光的波長的波長可變濾光器,以藉由從上述 波長可Μ濾光n射出的光加熱上述轉印層。藉此,可 基板與轉印層之密接性。 Ν 本發明之缺陷修 夕々π你玄除經圖案化之基板上的4 :Ρ Γ之缺陷修正方法,具備有:檢測出基板上: 置:i:驟而::及將脈衝雷射光照射在與上述基板相^ 一部分與上述缺方式大略同時去除上述薄膜白 衝心正方法中’亦可更具備藉由照射上述朋 變:::驟’且在上述薄膜之細 上述薄膜之-部4上:::雷射去除方式大略同時㈣ 在上述缺陷修正方法 取好更具備··將上述薄膜變 315540 1262306 更為具有可轉印至上述基板之轉印層之薄膜的步驟;以及 將脈衝雷射光照射在具有上述轉印層之薄膜而將轉印層轉 印在上述基板的步驟。藉此,可修正任意之圖宰。 才 、本發明之缺陷修正方法更具備有:使依上述缺陷修正 方:去中要修正之圖案的修正液,從已去除上述薄膜之部分 附著在上述基板的步驟;以及從上述基板去除上述薄膜的 步驟。藉此,可修正任意之圖案。 本發明之缺陷修正方法係將圖案轉印在經圖案化之基 板上的缺陷部分而修正缺陷之缺陷修正方法,具備有··檢 測出基板上之缺陷的步驟;使與上述基板相向之面具有^ 轉印至該基板之轉印層的薄膜接近的步驟;以及將脈衝雷 射光妝射在上述薄膜,而將上述轉印層轉印在上述基板之 缺陷部分的步驟。藉此,可穩定地進行缺陷之修正。 本發明之缺陷修正方法係將經圖案化之基板的缺陷予 以修正之缺陷修正方法,具備有:檢測出基板上之缺陷的 步驟;使薄膜接近上述基板的步驟;將脈衝雷射光照射在 C 4膜而d又置開口部的步驟;透過上述開口部使依要 修正之圖案的修正液附著在上述基板之缺陷部分的步驟; 乂及從上述基板去除上述薄膜的步驟。藉此,可使圖案正 確地附著在缺陷部分。 本%明之缺陷修正方法係將經圖案化之基板的缺陷予 =修正之缺陷修正方法,具備有:檢測出基板上之缺陷的 步私,使薄膜與上述基板相向的步驟;將脈衝雷射光照射 在上述4膜’而设置開口部的步驟;在上述開口部的位置 315540 11 1262306 。又置具有上述轉印層之薄膜的步驟;以及透過上述開口部 將上述轉印層轉印在基板的步驟。藉此,可防止轉印層轉 Ρ在開口部以外之部分,而能以簡單之構成正確地修正缺 陷。 在上述缺陷修正方法中,更具備:去除上述開口部之 周邊的t述薄膜,而設置用以去除上述基板與具有上述轉 ρ ^之;I膜間之空氣的空氣去除部的步驟,且最好在上述 開口Γ及上述空氣去除部的位置設置具上述轉印層的薄 膜。藉此’可提高轉印層之密接性。 上述缺陷修正方法之較佳實施例,係將氣體喷出至上 ㈣膜或具上述轉印層之薄膜’而使之與上述基板接近。 藉此’可形成正確之圖案。 本發明之圖案基板製造方法係具備:在基板形成圖案 的步驟,檢測出形成有圖案之基板上之缺陷的步驟;以及 將脈衝雷射光照射在接近上述基板之薄膜,而並利用雷射 去除方式大略同時去除上述薄膜之一部分與上述缺陷的步 驟。藉此,可製造無缺陷之基板。 在上述圖案基板製造方法中,亦可具有:將上述薄膜 變更為具有可轉印至上述基板之轉印層之薄膜的步驟,·以 及將脈衝雷射光照射在具有上述轉印層之薄膜而將轉印層 轉印在上述基板的步驟。藉此’可正確地製造具圖案之 案基板。 本發明之圖案基板製造方法係具備:使依上述圖幸基 板製造方法中要修正之圖案的修正液,從已去除上述薄ς 315540 1262306 2部分附著在上述基板的步驟;以及從上述基板去除 涛艇的步驟。藉此,可在缺陷部分形成任意之圖案。 本發明之圖案基板製造方法係將圖案轉印在經圖案化 之基板的缺陷部分而形成圖案之圖案基板製造方法,具 有:檢測出形成有圖案之基板上之缺陷的步驟;使盘^、求 二:相向之面具有可轉印至該基板之轉印層的薄膜接近: …以及將脈衝雷射光照射在上述薄膜,而將上 層轉印在上述基板之缺陷部分的步驟。藉此,可穩定 印圖案。 本發明之圖案基板製造方法係製造經圖案化之基板的 圖案基板製造方法,具備有:在基板上形成圖案之步驟; 檢測出基板上之缺陷的步驟;使薄膜與上述基板相向 驟;將脈衝雷射光照射在上述薄膜,而設置開口部的步驟. 在上述開口部的位置設置具轉印層之薄膜的步驟;透過上 述開口部使上述轉印層轉印在上述基板的步驟;以及從上 述基板去除上述薄膜的步驟。 本發明之圖案基板製造方法係製造經圖案化之基板的 圖木基板衣&方法,具備有:在基板上形成圖案之步驟; 檢測出基板上之缺陷的步驟;使薄膜接近上述基板的步 驟、;將脈衝雷射光照射在上述薄膜,而設置開Π部的步驟; 透過上述開口部使依要修正之圖案的修正液附著在上述基 板之缺陷部分的步驟;以及從上述基板去除上述薄膜的步 驟。藉此,可將正癌之圖案形成在基板。 在上述圖案基板製造方法中,更具備:去除上述開口 315540 13 1262306 敎周邊H㈣,而設置用以去除上述基板與具有上 迷轉印層之薄膜間之空氣的空氣去除部的步驟,且最好在 上述開口部及上述空氣去除部的位置設置具上述轉印層的 溥膜。藉此,可提高轉印層之密接性。 上述圖木製造方法之較佳實施例,係將氣體喷出至上 述薄膜或具上㈣印層之薄膜,而使之與上述基板接近。 本电明可提供-種以簡單之構成穩定進行缺陷之修正 的缺陷修正方法及缺陷修正I置及圖案基板製造方法。 【實施方式】 以下參照圖式說明本發明之實施例。以下之說明為本 發明之較佳實施例’本發明之範圍並不限定在以下實施 例。在以下之說明中標記同—符號者表示實質上相同之 容。 1 —以第1圖說明本實施例之圖案基板的缺陷修正裝置。 第1圖係缺陷修正裝置之構成圖。丨為短脈衝#射光源,2 為光束成形機構,3為半反射鏡,4為對物透鏡,5為薄膜, 6為基板’ 7為台’ 8為薄膜捲軸’ 9為燈光源,! 〇為濾光 器,11為半反射鏡,12為CCD照相機,13為空氣噴出機 構,14為薄膜捲轴旋轉機構。 在本實施例中,要修正缺陷之對象基板6係使用在液 晶顯示裝置之液晶面板的彩色濾光片基板。該彩色濾光片 基板6通常在透明之玻璃基板上設置有著色層及黑矩陣。 將該基板6水平載置在台7上,以判斷在彩色滤光片基板 315540 14 1262306 之口里素有無缺卩曰。照射雷射尾以修正缺陷部分之金素。 台7為具備χγ驅動機構(未圖示)之χγ台,可將基板6 移動至任意位置。本實施例之缺陷修正裴置係具備用以檢 測基板6之缺陷的缺陷檢測機構、及用以修正所檢測出之 缺陷的缺陷修正機構。具體而言,藉由缺陷檢測機構把握 缺之位置後,再藉由缺陷修正機構將雷射光照射在基板 6之缺陷部分以修正缺陷。χ,圖示之缺陷檢測機構及缺 fe仏正枝構之光學系統等構成係一例,也可具備其他之滤 光為、透鏡、反射鏡等光學構件。 、、首先說明缺陷檢測機構。觀察用光源係採用燈光源9 以進仃檢測。燈光源9係射出用以照明基板6之表面 土光。從燈光源9射出之觀察用的光係通過遽光器10射入 二反射鏡11。濾光器1G係波長可變濾光器,僅可遮蔽預 =波長之光。在此,濾光器1〇亦可配合薄膜5之透過率而 二::長,使所檢測出之光成為白色光。射入半反射们〗 糸朝基板6之方向反射。該光係在半反射鏡3反射, 亚射入對物透鏡4。在對物读^^ 4 透鏡4與基板6之間,與基板6 1向汉置有厚度約1〇㈣之由聚酿亞胺所構成之薄膜5。 :’在對物透鏡4聚光的光係透過薄膜5射入基板6之 表面,以照明基板之一部分。 膜5、對物透鏡4、丰“ 板6反射的光係透過薄 昭相機 鏡3及半反射鏡11而射入⑽ :2°CCD照相機12係根據在基板6表面的反射光 私測出晝像。CCD照相機 先 2係連接在個人電腦(pC)等資 °处衣置’根據所檢測出之晝像判斷基板6之缺陷的有 315540 15 1262306 '。例如,可採用與檢測出之參考晶片相 =t。,方式。檢測出之畫像與參考晶片不同時 2㈣部分。該缺陷檢測機構可區別檢測出不透明之里 相^透明之白缺陷。再者,PC係與台7之χγ,·動機構 ^ 1、’可從缺陷檢測出時之台7的位置料檢測部位, :、,欢測出基板上之缺陷晝素的座標。當然,缺陷檢測機 限定在圖示之構成,也可使用具備其他構成的缺陷 “m構。該缺陷檢測機構可採用與習知之缺陷檢測機構 相同的構成。#由使台7移動,可使基板6與來自燈光源 9之先的相對位置產生變化,以進行基板6之全面缺陷檢 測。 ^由上述缺陷檢測機構所檢測出之缺陷係藉由缺陷修正 機構進行修正。以下說明缺陷修正機構。短脈衝雷射光源 ^係Q開關YAG雷射,可射出1〇nsec以下之短脈衝光。 從紐脈衝雷射光源丨射出之短脈衝雷射光係射入光束成形 機構2光束成形機構2具備開孔(aperture)、開縫(sHt)或 透鏡等,可將短脈衝光之點成形為適當形狀之光點。例如, 可將基板上之短脈衝光之光點成形為與彩色濾光片之晝素 大致相同之矩形狀。或也可以成形為與缺陷形狀大致相同 之形狀。半反射鏡3係使短脈衝光朝基板6之方向反射。 在此’係以來自短脈衝雷射光源1與燈光源9的光形成同 轴之方式’配置各個光學零件。在半反射鏡3反射的短脈 衝光係照射在薄膜5。 薄膜5係捲繞在與薄膜捲軸旋轉機構14連接之2個薄 16 315540 1262306 祕軸8。_捲軸旋轉機構i4具備有馬達等 兩溥膜捲軸8旋輕。拉士 刀⑴便 合朝賴捲軸8旋轉,薄膜5 ;=: 出。進行缺陷修正前以使薄膜5彎曲之 HI捲轴旋轉機構14,並使薄膜捲轴8之-個旋 賴5係以與基板6不接觸之程度彎曲。空氣 =機=係具備氣體槽、配管、電離器(咖㈣及過遽 =透:Γ電離化之空氣從薄膜5之上喷出。例如,在 % :物=下設置基板側之底面開口的圓筒。該圓筒呈錐 在基板側較細。為使氣體流通在該圓筒内,在側面 =接ΐ配管。藉由使氣體流通,使圓筒内之内壓提高,而 出至薄膜側。進行缺陷修正時,噴出氣體而使薄 盥其y反側、’使溥膜5與基板6相接近。藉由使薄膜5 Ϊ二反M目接近’在缺陷部分中基板6與薄膜5間設有微 …門隙此日寸’使基板6之缺陷部分以外的突出部分盥 =膜^接觸亦可。該薄膜5與基板6之距離的調整係藉由 :::出機構13之喷出量來調整。或者,也可以利用薄膜 =轉機構14調整薄膜5之、彎曲及張力。再者,也可利 :使台:朝Z方向移動的機構調整間隔。藉由空氣噴出機 U使薄膜5與基板6相接近,則無須使薄膜$密接在基 板。因此,可進行穩定之修正,並可減低對基板6之圖案 造成之影響。 該薄膜5係如第2圖所示,可依所要修正之 # ^ ^ 只 :同之薄膜。缺陷修正裝置之薄膜係由黑缺陷修正 之薄膜5a、薄膜捲軸8a及白缺陷修正用之薄膜讣、薄 315540 17 1262306 缺心成。薄膜化及薄膜5b係使用依修正對象之 動^構Γ未之。薄膜捲軸8係安裝在線性導件等捲軸移 =::,而設成可朝χ方向滑動。使薄膜捲軸h 久’寻概捲轴8b朝X方合梦、, 狀χ 白私動,亚將短脈衝光照射在盘要 : : = :應的薄膜5。亦即,修正黑缺陷時,使薄膜 之=至來自短脈衝雷射光源1之短脈衝光的雷射光點15 衝修正白缺陷時,使薄膜㈣動至來自短脈 Π:脈衝光的雷射光點15之位置。來自該短 =射光源1與燈光源9的光係調整成在同-光軸上, 5中之雷射光點15與觀察用的光係在大致相同之 捲轴捲轴f之移動時與薄膜5之送出時,係使薄膜 疋’對溥膜5施加適當張力’以在基板6與薄膜 b设置間隙。然後在不嘴出氣體之狀態下,進行薄膜 =動與送出。此外,在修正缺陷時,使薄膜5彎曲,並 =空乳噴出機構13,使氣體噴出而使薄膜5接近基板表 面0 伙以昂3圖說明該薄膜5a與基板6之構成。第3圖顯示 土士(M4之構成的放大剖視圖〇帛3圖⑷顯示照射短脈衝 "才之/專膜與基板的構成。61為紅色(R)之著色層,62為 亲色⑹之著色層’ 63為藍色⑼之著色層,為黑矩陣 (M)此等係叹置在基板6上。首先,說明彩色遽光片基 板之」又的製造方法。在彩色濾光片用之基板6上,藉由 灰鍍条鍍法使作為遮光膜之鉻膜成膜。並利用曝光、顯像 步驟進行圖案化。因此鉻膜成為形成矩陣狀之BM64。從 315540 18 1262306 BM64上塗布分散有與著色層的顏色對應之簡的感光性 樹脂,並利用曝光、顯像步驟進行圖案化。藉由反覆該步 驟依序在腿64之間設置R之著色層6卜G之著色層62、 B之者色層63。在上述著色層上形成保護膜及晝素電極。 在此’如第3圖⑷所示,在R之著色層61附著有昱物. 附著有該異物65的晝素係藉由缺陷檢測機構檢測為不透 光之黑缺陷。該薄膜5a與基板6大略接觸。 對附者有该異物65的晝素,照射來自短脈衝雷射光源 1之lOnsec以下之短脈衝光。由對物透鏡4聚光的短脈衝 先係射入藉由空氣喷出機構而與基板6接近之薄膜^。該 短脈衝光係利用雷射去除方式調整功率以使薄膜^部分1262306 IX. Description of the Invention: [Technical Field] The present invention relates to a defect correction method for a pattern substrate, a defect correction device, and a pattern substrate manufacturing method. [Prior Art] In the manufacturing process of the color filter for liquid crystal display, the defects in the color filter and the light-film substrate are corrected in order to change the cover ratio. This defect correction method has a method of applying a resist to the front end of the needle and dropping it on the defective portion. However, in this method, the amount of dripping changes due to the viscosity of the photoresist, so that it is difficult to control the amount of dripping and the correction accuracy, and it is difficult to perform the correction stably. Moreover, it is necessary to carry out the drying step and the correction for a long time, resulting in low productivity. Further, other defect correction methods include a film transfer method. In this method, a film having a colored layer is adhered to a white color defect portion of a color filter or a light-substrate substrate which does not have a colored layer, and a colored layer is transferred from the film to correct a defect as described in Patent Document 1). The problem of the method will be explained in Fig. 14. Fig. 14 is an enlarged cross-sectional view showing the configuration of a color filter substrate. Fig. 14 is a view showing the configuration of a portion of the color filter substrate. The substrate 6 for a color filter is usually provided with a black matrix 71 (hereinafter referred to as BM) in a matrix form. And there is a red, green, and supervised color layer 70 between the two. One portion of the colored layer 70 is superposed on the BM 71, thereby forming a structure having irregularities. For example, in the color filter of the resin black matrix structure, the BM and the coloring layer are each about 1/m, and thus the surface convexity is about 1 #m. Therefore, the film partially adheres to the convex portion of the colored layer 7〇, and the thickness of 315540 5 1262306 is not properly adhered to the defective portion located in the concave portion. The method makes the film completely p pay mo 6 # 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有 有Further, in the conventional printing method, since the phase is transferred to the substrate, a multilayer structure having a material different from the layer on the substrate side is formed. In this way, the formation of a halogen element from the same material as the color on the substrate side has an effect on the display quality. In the case of the conventional defect correction method, it is difficult to stably correct the pattern base. The defect correction crack of the present invention is a defect correction device for removing defects on a patterned substrate, and is provided with: a pulsed laser source that emits a pulsed laser (for example, a short pulse laser in the embodiment of the present invention) a light source 1); and a film disposed opposite to the base plate (for example, a film/in the embodiment of the present invention)" is removed by laser irradiation by irradiating pulsed laser light from the pulsed laser light source to the film The (laser abrasi〇n) method roughly removes a part of the film and the defect at the same time. Therefore, the defect on the pattern substrate can be removed with a simple configuration. In the upper defect correction device, by irradiating the pulsed laser light source, the above The thin film is thinned, and a part of the thin film and the defect are removed by the laser removal method. In the widging, the film is changed to have a transfer layer that can be transferred to the substrate (for example, The film changing mechanism of the film of the coloring layer 51) in the embodiment of the invention (for example, the film 315540 6 1262306 reel rotating mechanism 14 in the embodiment of the present invention), and the above pulse The laser light is irradiated onto the substrate having the upper layer and the transfer layer, and the transfer layer is transferred onto the substrate. Therefore, the white defect and the black defect can be stably corrected with a simple configuration. The transfer layer is transferred to a portion where the defect is removed. Therefore, the defect correction can be quickly performed. The defect correction device of the present invention further includes a correction for the pattern to be corrected on the substrate. The liquid adheres to the shell of the substrate, and the correction liquid adheres to the substrate from the portion from which the film has been removed, and is corrected. Therefore, the pattern can be accurately corrected. The defect correction device of the present invention is in the defect correction device described above. Further, a film having a transfer layer movable to a position where the film is removed is further provided, and the transfer layer is transferred from the portion from which the film has been removed to the substrate to perform defect correction. The device is a defect correction device that corrects a defect by transferring a pattern onto a defective portion of the patterned substrate, and is provided with: a surface of the substrate facing the transfer layer that is transferable to the substrate, and a film of the substrate; and a pulsed laser source that emits pulsed laser light that is irradiated onto the film corresponding to the defect portion, and will be from the above The pulsed laser light of the pulsed laser light source is irradiated onto the film having the transfer layer, and the transfer layer is transferred to the defective portion of the substrate. Thereby, the pattern can be correctly formed on the defective portion for stabilization. In a preferred embodiment of the defect correction device, the substrate is a mask substrate having a light-shielding film and a photoresist pattern formed on the light-shielding film, and the defect of the photoresist pattern is corrected. Correction of the pattern of the mask substrate 315540 7 1262306. The defect correction device of the present invention is a defect correction device that corrects the defect of the patterned substrate by 2, and includes a film disposed opposite to the substrate, and emits light. The film is a pulsed laser light source in which a pulsed laser beam is provided in the opening portion of the film; and a position movable to the opening portion The correction liquid of the pattern to be corrected on the substrate adheres to the shell purple, and the correction liquid adheres to the substrate from the portion from which the film has been removed, and the correction is performed. Thereby, the pattern can be attached with high precision, and the defect correction can be performed correctly. In the defect correction device of the present invention, the defect correction device that corrects the defect of the patterned substrate is provided with a film that is disposed opposite to the substrate, and emits a pulse that is irradiated onto the film to provide an opening in the film. a pulsed laser light source of laser light; and a film (for example, a film 18 in the embodiment of the present invention) having a transfer layer movable to a position corresponding to the opening, and transferring the transfer layer through the opening The defect is corrected by printing on the above substrate. Thereby, the defect can be correctly corrected with a simple configuration. A preferred example of the defect correction device further includes a heating block movable to a position corresponding to the opening (for example, the thermal block 20 in the embodiment of the present invention), and the heating block has the above-mentioned rotation The film of the printing layer is pressed against the substrate to transfer the transfer layer. Thereby, the transfer layer can be transferred with good adhesion with a simple configuration. In the above defect correction apparatus, the heating block may further include a convex portion corresponding to the upper opening, and the film having the transfer layer and the substrate may be pressed by the convex portion. Therefore, the adhesion can be improved. 315540 8 1262306 In the above defect correction device, a fixing mechanism for fixing a film provided with the opening may be provided. Thereby, the offset of the opening portion can be prevented. In the above defect correction device, the film having the transfer layer is preferably further provided with an absorption layer that absorbs the pulsed laser light (for example, the intumescent layer 23 in the embodiment of the present invention), and irradiates the pulsed laser light to the absorption layer. And transferring the above transfer layer to the above substrate. Thereby, the transfer layer can be efficiently transferred. In the above defect correction device, it is preferable that a separation layer for separating the rubbing layer from the transfer layer after the transfer layer is transferred onto the substrate is provided between the absorption layer and the transfer layer. Thereby, the absorbing layer can be prevented from adhering to the substrate, and the defect can be corrected correctly. The defect correction device of the present invention is directed to the defect correction device for illuminating the pulsed laser light to remove the correction liquid of the peripheral portion of the portion from which the film has been removed. Thereby, the pattern can be corrected correctly. Preferably, the defect correction device is further provided with a discharge mechanism for discharging a gas to the film or the film having the transfer layer, so that the upper (four) film or the transfer layer is provided by the discharge mechanism. Close to the above substrate. Thereby, the substrate and the film can be brought close to each other with high precision. Preferably, the soil is further provided with a beam shaping mechanism (for example, the beam shaping mechanism 2 in the embodiment of the present invention) for shaping pulsed laser light from the pulsed laser source, and the beam is to be borrowed. The pulsed laser light formed by the forming mechanism is irradiated onto the film or the film having the upper layer. Thereby, the defect can be corrected with high precision. Preferably, the defect correction device further includes: an observation light source for illuminating the substrate on the axis substantially the same as the pulsed laser light of the pulsed laser light source of the above-mentioned 315540 9 1262306; and for detecting the illumination A detecting mechanism for light emitted from the observation light source of the substrate. Thereby, light can be accurately incident on the defect detecting portion. The film having the above transfer layer further has a light-transmissive transparent layer of the above-mentioned observation light source (for example, the transparent layer 55 in the embodiment of the present invention), and may further comprise a film for feeding the transfer layer so that A film reel (for example, the film reel 8 in the embodiment of the present invention) that changes the position of the light from the transparent layer to the transfer layer. Thereby, the positional deviation at the time of the x-defect detection and the defect correction can be prevented with a simple configuration. "In the above defect correction device, a wavelength variable filter for selecting a wavelength of light from the light source for observation may be further provided to heat the light by the light emitted from the wavelength filter n In this way, the adhesion between the substrate and the transfer layer can be achieved. 缺陷 The defect of the present invention is 4 你 你 玄 玄 玄 玄 图案 图案 图案 图案 图案 图案 图案 图案 图案 图案 图案 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷Upper: set: i: sudden:: and irradiating the pulsed laser light with the above-mentioned substrate and the above-mentioned missing mode, while removing the above-mentioned film, the white punching method is also more capable of illuminating the above-mentioned friends: : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : a step of transferring a film of the transfer layer of the substrate; and a step of irradiating the film having the transfer layer with pulsed laser light to transfer the transfer layer to the substrate. Thereby, any pattern can be corrected. Defect modification of the present invention The method further includes: a correction liquid according to the above defect: a step of removing the correction liquid of the pattern to be corrected, a step of attaching the portion from which the film has been removed to the substrate; and a step of removing the film from the substrate. Correcting an arbitrary pattern. The defect correction method of the present invention is a defect correction method for correcting a defect by transferring a pattern onto a defective portion of a patterned substrate, and having a step of detecting a defect on the substrate; a step of facing the substrate facing the film transferred to the transfer layer of the substrate; and a step of transferring the pulsed laser beam onto the film to transfer the transfer layer to the defective portion of the substrate. Therefore, the defect correction method can be stably performed. The defect correction method of the present invention is a defect correction method for correcting a defect of a patterned substrate, comprising: a step of detecting a defect on the substrate; and bringing the film close to the substrate a step of irradiating the pulsed laser light on the C 4 film and d placing the opening portion; and modifying the pattern to be corrected by the opening portion a step of adhering the liquid to the defective portion of the substrate; and removing the film from the substrate. Thereby, the pattern can be correctly attached to the defective portion. The defect correction method of the present invention is a defect of the patterned substrate. The defect correction method according to the correction method includes a step of detecting a defect on the substrate, a step of causing the film to face the substrate, and a step of providing pulsed laser light to the film 4 to provide an opening; a position of the portion 315540 11 1262306. The step of providing the film of the transfer layer; and the step of transferring the transfer layer to the substrate through the opening. Thereby, the transfer layer can be prevented from being transferred outside the opening In the above defect correction method, the defect correction method further includes: removing the thin film around the opening portion, and providing the substrate to remove the substrate and having the above-mentioned turn ρ; a step of removing the air removing portion of the air between the films, and preferably providing a thin portion of the transfer layer at a position of the opening Γ and the air removing portion . Thereby, the adhesion of the transfer layer can be improved. In a preferred embodiment of the above defect correction method, gas is ejected to the upper (four) film or the film of the transfer layer to be brought close to the substrate. By this, a correct pattern can be formed. The method for manufacturing a pattern substrate according to the present invention includes the steps of: forming a pattern on the substrate, detecting a defect on the substrate on which the pattern is formed; and irradiating the pulsed laser light on the film close to the substrate, and using a laser removal method The step of simultaneously removing one of the above films and the above defects is roughly performed. Thereby, a defect-free substrate can be manufactured. In the method of manufacturing a pattern substrate, the film may be changed to a film having a transfer layer transferable to the substrate, and a pulsed laser light may be applied to the film having the transfer layer. The step of transferring the transfer layer to the above substrate. Thereby, the patterned substrate can be manufactured correctly. The method for producing a pattern substrate according to the present invention includes: a step of removing a portion of the correction liquid in a pattern to be corrected according to the method of manufacturing the substrate, and removing the thin layer 315540 1262306 from the substrate; and removing the water from the substrate The steps of the boat. Thereby, an arbitrary pattern can be formed in the defective portion. The method for manufacturing a pattern substrate according to the present invention is a method for producing a pattern substrate in which a pattern is transferred onto a defective portion of a patterned substrate, and has a step of detecting a defect on a substrate on which a pattern is formed; Two: a film having a transfer layer transferable to the substrate on the opposite side is close to: and a step of irradiating the upper layer to the defective portion of the substrate by irradiating the pulsed laser light onto the film. Thereby, the printed pattern can be stabilized. The method for manufacturing a pattern substrate according to the present invention is a method for producing a patterned substrate, comprising: a step of forming a pattern on the substrate; a step of detecting a defect on the substrate; and causing the film to face the substrate; a step of irradiating the film with the opening and providing an opening; a step of providing a film having a transfer layer at a position of the opening; a step of transferring the transfer layer to the substrate through the opening; and The step of removing the above film from the substrate. The pattern substrate manufacturing method of the present invention is a method for manufacturing a patterned substrate, comprising: a step of forming a pattern on the substrate; a step of detecting a defect on the substrate; and a step of bringing the film close to the substrate a step of irradiating the laser light onto the film to provide an opening portion, a step of adhering the correction liquid of the pattern to be corrected through the opening to the defective portion of the substrate, and removing the film from the substrate step. Thereby, a pattern of positive cancer can be formed on the substrate. In the above method for manufacturing a pattern substrate, the method further comprises the steps of: removing the opening 315540 13 1262306 敎 the periphery H (4), and providing an air removing portion for removing the air between the substrate and the film having the transfer layer, and preferably A ruthenium film having the transfer layer is provided at a position of the opening portion and the air removal portion. Thereby, the adhesion of the transfer layer can be improved. In a preferred embodiment of the above-described method of fabricating a wood, a gas is ejected to the film or a film having the upper (four) printing layer to be adjacent to the substrate. The present invention provides a defect correction method and a defect correction I and a pattern substrate manufacturing method in which a defect is easily corrected in a simple configuration. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description is a preferred embodiment of the invention. The scope of the invention is not limited to the following examples. In the following description, the same symbol is used to indicate substantially the same content. 1 - A defect correction device for a pattern substrate of this embodiment will be described with reference to Fig. 1. Fig. 1 is a configuration diagram of a defect correction device.丨 is a short pulse #射光源, 2 is a beam shaping mechanism, 3 is a half mirror, 4 is a counter lens, 5 is a film, 6 is a substrate '7 is a table' 8 is a film reel' 9 is a light source,! 〇 is a filter, 11 is a half mirror, 12 is a CCD camera, 13 is an air ejection mechanism, and 14 is a film reel rotating mechanism. In the present embodiment, the target substrate 6 to be corrected for defects is a color filter substrate used in a liquid crystal panel of a liquid crystal display device. The color filter substrate 6 is usually provided with a colored layer and a black matrix on a transparent glass substrate. The substrate 6 is horizontally placed on the stage 7 to determine whether or not there is a defect in the mouth of the color filter substrate 315540 14 1262306. The laser tail is illuminated to correct the gold of the defective portion. The stage 7 is a χ γ stage including a χ γ driving mechanism (not shown), and the substrate 6 can be moved to an arbitrary position. The defect correction device of the present embodiment includes a defect detecting mechanism for detecting a defect of the substrate 6, and a defect correcting mechanism for correcting the detected defect. Specifically, after the defect detecting means grasps the missing position, the laser beam is irradiated onto the defective portion of the substrate 6 by the defect correcting means to correct the defect. In other words, the defect detecting means shown in the figure and the optical system of the lacking of the positive branch are an example, and other optical members such as a filter, a lens, and a mirror may be provided. First, the defect detection mechanism will be explained. The light source for observation uses the light source 9 for detection. The light source 9 emits a surface light for illuminating the surface of the substrate 6. The light for observation emitted from the lamp light source 9 is incident on the second mirror 11 through the chopper 10. The filter 1G is a wavelength-variable filter that blocks only the light of the pre-wavelength. Here, the filter 1〇 can also match the transmittance of the film 5 to be long, so that the detected light becomes white light. Injecting semi-reflectives 糸 Reflecting in the direction of the substrate 6. This light is reflected by the half mirror 3 and is incident on the objective lens 4. Between the object reading lens 4 and the substrate 6, a film 5 made of polyacrylonitrile having a thickness of about 1 〇 (4) is placed on the substrate 6 1 . : ' The light condensed on the object lens 4 passes through the film 5 and enters the surface of the substrate 6 to illuminate one of the substrates. The film 5, the objective lens 4, and the light reflected by the plate 6 are transmitted through the thin camera lens 3 and the half mirror 11 (10): the 2° CCD camera 12 is privately measured based on the reflected light on the surface of the substrate 6. For example, the CCD camera is connected to a personal computer (pC), etc., and the 315540 15 1262306' is used to determine the defect of the substrate 6 based on the detected artifact. For example, the reference wafer can be detected and detected. Phase = t., mode. The detected image is different from the reference wafer in part 2 (4). The defect detection mechanism can distinguish the opaque inner phase and the transparent white defect. Furthermore, the PC system and the station 7 are χ, · The mechanism ^1, 'can detect the position of the defective material on the substrate 7 from the position of the defect detection when the defect is detected, and, of course, the defect detector is limited to the configuration shown in the figure, and can also be used. Has the defect of other structures "m structure. The defect detecting mechanism can adopt the same configuration as the conventional defect detecting mechanism. By moving the stage 7, the relative position of the substrate 6 and the light source 9 can be changed to perform the overall defect detection of the substrate 6. ^ The defect detected by the above defect detecting mechanism is corrected by the defect correcting mechanism. The defect correction mechanism will be described below. Short-pulse laser source ^ is a Q-switched YAG laser that emits short pulse light below 1〇nsec. The short-pulse laser light emitted from the neo-pulse laser light source is incident on the beam shaping mechanism. The beam shaping mechanism 2 is provided with an aperture, a slit (sHt) or a lens, etc., and the short pulse light spot can be formed into an appropriate shape. The light point of the shape. For example, the spot of the short pulse light on the substrate can be formed into a rectangular shape substantially the same as the element of the color filter. Alternatively, it may be formed into a shape substantially the same as the shape of the defect. The half mirror 3 reflects the short pulse light toward the substrate 6. Here, each optical component is disposed in such a manner that the light from the short-pulse laser light source 1 and the light source 9 are formed in the same axis. The short pulse light reflected by the half mirror 3 is irradiated onto the film 5. The film 5 is wound around two thin 16 315540 1262306 secret shafts 8 connected to the film reel rotating mechanism 14. The reel rotation mechanism i4 is provided with a two-film reel 8 such as a motor. The razor (1) is rotated by the reel 8 and the film 5; =: out. The HI reel rotating mechanism 14 for bending the film 5 before the defect correction is performed, and the one of the film reels 8 is bent so as not to be in contact with the substrate 6. Air = machine = with gas tank, piping, ionizer (Caf (4) and 遽 = 透: Γ ionized air is ejected from the film 5. For example, under the %: material = the bottom side of the substrate side is opened The cylinder has a tapered cone on the substrate side. In order to allow gas to flow in the cylinder, the side surface is connected to the pipe. By circulating the gas, the internal pressure in the cylinder is increased to the film. When the defect is corrected, the gas is ejected so that the y is reversed from the side of the y, and the ruthenium film 5 is brought close to the substrate 6. By making the film 5 close to the M mesh, the substrate 6 and the film 5 are in the defective portion. There is a micro-gap gap to make the protrusion φ=film contact other than the defective portion of the substrate 6. The distance between the film 5 and the substrate 6 is adjusted by:: ejection of the mechanism 13 Alternatively, the film = rotation mechanism 14 may be used to adjust the bending, tension, and tension of the film 5. Further, it is also possible to adjust the interval of the mechanism that moves in the Z direction by the air jetting machine U. When the film 5 is close to the substrate 6, it is not necessary to make the film $ close to the substrate. Therefore, stable correction can be performed. The effect of the pattern on the substrate 6 can be reduced. The film 5 is as shown in Fig. 2, and can be modified according to the same method. The film of the defect correction device is a film 5a modified by black defects. The film reel 8a and the white defect correction film 讣, thin 315540 17 1262306 are not perfect. The thin film and the film 5b are used in accordance with the modified object. The film reel 8 is mounted on a reel such as a linear guide. =::, and it can be set to slide in the direction of the 。. Make the film reel h for a long time, look for the reel 8b to the X-party dream, and the white whistle, the sub-short pulse light is illuminated on the plate: : = : The film 5, that is, when the black defect is corrected, when the laser light spot 15 of the short pulse light from the short pulse laser light source 1 is corrected to correct the white defect, the film (4) is moved to the short pulse: The position of the laser spot 15 of the pulsed light. The light from the short light source 1 and the light source 9 is adjusted to be on the same optical axis, and the laser spot 15 in 5 is substantially the same as the light system for observation. When the reel reel f is moved and the film 5 is fed out, the film 疋' is applied to the enamel film 5 with appropriate tension. 'The gap is provided between the substrate 6 and the film b. Then, the film is pressed and sent out without the gas being blown out. Further, when the defect is corrected, the film 5 is bent, and the empty emulsion discharge mechanism 13 makes the gas The film 5 is ejected to approach the surface of the substrate. The structure of the film 5a and the substrate 6 will be described with reference to Fig. 3. Fig. 3 shows the enlarged view of the structure of the M4 (the structure of the M4 is shown in Fig. 3 (4) showing the short pulse of irradiation " /Special film and substrate composition. 61 is a red (R) color layer, 62 is a color (6) color layer '63 is a blue (9) color layer, is a black matrix (M), these are placed on the substrate 6 First, a method of manufacturing a color light-emitting sheet substrate will be described. A chromium film as a light-shielding film is formed on the substrate 6 for a color filter by a gray plating method. And use the exposure and development steps to pattern. Therefore, the chromium film becomes a matrix-shaped BM64. A photosensitive resin in which a simple color corresponding to the color of the coloring layer is dispersed is applied from 315540 18 1262306 BM64, and patterned by exposure and development steps. By repeating this step, a color layer 6 of G, a color layer 62 of B, and a color layer 63 of B are disposed between the legs 64 in this order. A protective film and a halogen electrode are formed on the colored layer. Here, as shown in Fig. 3 (4), a stain adheres to the color layer 61 of R. The halogen adhering to the foreign matter 65 is detected as a black defect that is not transparent by the defect detecting means. The film 5a is in great contact with the substrate 6. The halogen having the foreign matter 65 attached thereto is irradiated with short pulse light of lOnsec or less from the short-pulse laser light source 1. The short pulse condensed by the object lens 4 is first incident on the film which is close to the substrate 6 by the air ejecting mechanism. The short pulse light system uses a laser removal method to adjust the power to make the film portion

開口。在本實施例中,使用聚醯亞胺薄膜,因此如使用YAG 1 脈衝雷射光源1之3倍高譜波之切nm或4倍高譜波之 一則因吸收短脈衝光’故可容易地在薄膜h設置開 口和聚醯亞胺薄膜在可見光領域不會吸收而略透明,故 容易觀察’使用燈光源9即可檢測出缺陷。又,薄膜5a =限定聚醯亞胺,可使用任何藉由光之照射,而會化學分 解,熱分解、昇華或磨钱丰k . mi丄: _)等而開口的材質。 田射先可错由光束成形機構2成形Opening. In the present embodiment, a polyimide film is used, so that one of the three-fold high-spectrum cuts of the YAG 1 pulsed laser light source 1 or the four-fold high-spectrum wave is easily absorbed by the short pulse light. The opening of the film h and the polyimide film are not absorbed in the visible light region and are slightly transparent, so that it is easy to observe that the defect can be detected by using the lamp light source 9. Further, the film 5a = defines a polyimine, and any material which is opened by chemical decomposition, thermal decomposition, sublimation or grinding, etc., can be used by irradiation of light. The field shot can be formed by the beam shaping mechanism 2

形狀,故薄膜5之開口部的形狀可形&/狀戈旦素之 壹本—L 办狀了形成為與缺陷形狀或R 狀大致相同之形狀。藉由t射去除可大致同時去 ^=65及㈣的—部分。經切之異物-係如第3 圖⑻所示,通過薄膜5a之開口部從基板脱離。又, 部周邊係由薄膜所覆蓋,故1物 少 文7、物65不會附著在修正部周邊 315540 】9 l2623〇6 而成為新的缺陷。如此,利用雷射去除方式可大略同時去. 除薄膜與缺陷。又,經去除之異物65a可能為一片,:亦 有形成多數的破片,而落在薄膜上之情形。短脈衝雷射光· 源、1之功率可緩緩調整以在薄膜5a開口,也可調整成同時. 進1薄膜之開口與異物之去除。緩緩使薄膜5a開口時,: 如第3圖(c)所示,形成薄膜5a變薄之狀態,然後,在薄 膜5^變薄之部位照射短脈衝光以去除異物。當開口部尺寸 小時’可在送出薄膜5之同時設置開口部。如使用遠紫外 ^二因薄膜5a會化學分解,故在異物去除後在基板表面殘φ 召溥膜之殘屑時,照射遠紫外線可去除薄膜之殘屑。 又,異物65為透明時,即使對異物照射短脈衝光,因 無法進行光之吸收,故不會產生雷射去除。相對於此,薄 膜5使用聚酿亞胺等吸收光之薄膜,而在使吸收薄膜大略 ^觸異物上部的狀態下,照射短脈衝雷射光時,薄膜利用 雷射去除方式開口的同時’異物會因往前方跳躍之氣體或 =片而被瞬間推壓至基板,再藉由之後的反跳可從基板脱 因藉由上述處理去除基板上之異物65及著色層61, ,陷會成為透光之白缺,為修正該白缺陷66,如 弟4,所不,使薄膜捲軸8a與薄膜捲轴似方向移動, 亚使涛版5 b移動至雷粉ϋ 1 m ㈣至田射點15之位置。然後,將短脈衝光 :射在㈣5b,以修正白缺陷66。以第5圖說明白缺陷之 :正方法。第尸顯示薄膜5,與基板6之間的構成的放大 。'視圖。在溥膜5b之基板側的面塗布有著色層5ι。薄膜 335540 20 1262306 上係知用厚度1G至2()心程度的聚乙烯薄膜作為基底薄 ^並採用以厚度lAm程度的光阻作為著色層51的乾薄 :先阻。薄膜5b最好採用不吸收短脈衝光的材質,且不限 疋聚乙稀,也可使用聚丙烯或PET薄膜等,厚度也不限定( 之厚度。又’著色層51也可使用與基板側之R之著 層大致㈣之材質。#此,可防止液晶顯 =者當然,薄膜5b與著色層51之材質及厚度不限定: 使經空氣喷出機構13電離化之空氣喷出 2接近基板6。因此,_5b會接觸設在基板6之突專出膜部 ^且在與基板之著色層部分(缺陷部分)之間形成微小間 而且’利用光束成形機構將形成為與缺陷部分大致相 2形狀的短脈衝光照射在薄膜5b。短脈衝光之輸出可調 :為能利用雷射去除方式使著色層Η從薄膜%剝離。從 缚膜外剝離之著色層51係飛行在薄膜5b與基板6之* !,而在缺陷部分落地。藉此’可使紅色之著色層51a: :、轉印在缺陷部分。以一次轉印無法轉印充分量的著色 層5U時,也可使薄膜捲軸8旋轉’將薄膜5b朝γ方向 运出,同時照射短脈衝光。又,藉由從與設有著色層5ι 1面相反的面將短脈衝光照射在薄膜5b,可使基板6與薄 :5b接近。溥膜5與基板6之間的間隙為微小之距離,故 大氣中之分子等與著色層51a的衝突次數少。藉此,利用 在大氣中之雷射去除蒸鍍,可進行缺陷修正之過程。再者, 因藉由空氣喷出機構13而接近’故可進行間隔之微妙調 315540 21 1262306 整。因此,可在不受基板之表面狀態的影響下,穩定進行 缺陷修正。 在本實施例中,藉由預先調整燈光源9之功率及波長 等,可加熱薄膜5之著色層51。例如藉由波長可變濾光器 可延擇來自燈光源9之光的紅外線。藉由將該紅外線照射 板6,可僅點狀加熱缺陷部分之著色層5ι。藉此,可 提冋洛在基板6上時之對基板的密接性。χ,藉由將來自 燈光源9之光作成為薄膜%及著色層51之吸收率低之波 長且基板之吸收率高之波長的光,可進行基板6之加敎。 猎此,可提高落在基板6上時之對基板的錢性。如此, :本發明之缺陷修正裝置中,可調整ccd照相機取入用之 、登光源9之輸出及波長而進行加熱。 〇二對於:個部位之缺陷修正’可不隨著光學系統或 J 而僅藉由薄膜捲軸8之移動來進行修正,因此可 =物透鏡下觀察以上之動作。僅利用―個短脈衝雷 里缺;:、之:可進行異物之去除及著色,並可進行白缺陷與 == 再者,在修正動作結輕,可利用CCD照 相機12檢〉則屮θ 薄膜5 a及薄膜;b二個=進5行:第:圖及第4圖僅顯示 具備設有G、B之著二:但除了 R之外,亦可更 層的薄膜5及薄^以修正BM之缺陷的遮光 部位的缺陷也 於G' B之者色層及腹之 著色層可使用分散有έ=層;1同樣地進行修正。g、b 之修正可採用^古監色之顏料的光阻。對於腿 用皇布有可遮蔽可見光之鉻等材質的薄膜。藉 315540 22 1262306 ϊ之m、G、B之晝素及_之全部的缺陷,能以簡 對基板之全部區域進行修正的裝置。而 行修正,故可短斤門、隹一:_即可對全部之缺陷進 文了^間進饤修正,具有位 因她係利用雷射去除方式進行修正,故=習 般使薄朕與基板密接。因 2 的影響下,穩定進行缺陷修正。面狀態 正成與基板圖荦部分之佥辛夫2附者置。因此,可修 並且宴备思相同之顯示特性的晝素, 品質。又曰:使用任意之材質,故可提高液晶顯示裝置的 LU 述說明中,係以液晶顯示裝置用的彩色滹 先片^進行說明’但也可湘在CCD照 攝 :::彩色r片基板。當然,也可利用在彩色遽】 " 之圖案基板。例如,也可利用在PDP或声極射 線管等榮光體的修正。又,在上述之說明中 =之不透明材質,也可為由透明材質所構成之異 等义/頁2也可去除未精密度佳地設置的著色層等。將該 缺陷之修:之異物等稱之為缺陷。藉由去除該缺陷而進行 “ίΓ:例之缺陷修正裝置係在實施例1中說明之缺陷 ^衣置中變更薄膜5者。本實施例之構成與實施们中 =過之構成内容相同故省略其說明。以第6圖說明使用 在本實施例之缺陷修正裝置的薄膜。第6圖為薄膜5之構 315540 23 1262306 ΐ:贿視圖:在第6圖中’51為R之著色層,52為G之 ^ 53為8之著色層,54為遮光層,55為透明層。 :本實施例中’在-個薄膜上具備R、G、B之著色層以及 ^光層和透明層。可利用—個薄膜修正位在彩色濾'光片基 G B之晝素及bm部位的缺陷。又,R之著色層 0之著色層52、B之著色層53、遮光層54及透明層 55分別形成在薄膜不同之部分。 —'專膜5具備有基底薄膜及設在基底薄膜的一面之R之 著色層51、G之著色層52、B之著色層53及遮光層54。 弟:圖顯示薄膜之一部分構成,實際上尺之著色層5i、g *著色層52、B之著色層53及遮光層54係反覆設置在薄 \上R之著色層51、G之著色層52、B之著色層53 :遮光層54係隔著間隙而設置,且在其間具有僅由基底薄 膜所構成之透明層55。透明層55可透過來自燈光源9之 光丄俾能以CCD照相機12觀察缺陷部分,也可以設置基 &薄膜以外的層。遠基底薄膜、著色層及遮光層Η之材質 可使用與上述實施例相同者。將薄膜5捲繞在薄膜捲軸8: ,上述實施例同樣地以與基板6相對向之方式配置設有該 =色層及遮光層54的面。藉由使薄膜捲軸8旋轉,可使朝 前頭方向送出薄膜的雷射點位置對準透明層55、r之著色 層5〗、G之著色層52、B之著色層53或遮光層54。 在缺陷檢測時及異物去除時,使透明層55位於雷射點 之位置。如透明層55為來自燈光源9之光可透過的材質, 則該光可由CCD照相機12檢測出。然後,與實施例1同 315540 24 1262306 才K地進订缺陷檢測後,藉由雷射去除方式使薄膜5之透明 二、,開口以去除異物。藉此,黑缺陷會變成白缺陷。使薄 軸8旋轉,以使與缺陷部分對應之著色層或遮光層位 ;"、、占之位置。然後,與上述實施例同樣地藉由雷射去 除方式使著色層或遮光層54轉印以修正白缺陷。又,最好 2整雷射之輸出或設置濾光器(filter)等,以使白缺陷之修 復時基底薄膜不會開口。 ^ 口本發明之缺陷修正裝置不限定在彩色濾光片基板,也 可=用在其他之圖案基板。例如也可使用在液晶顯示裝置 之薄膜電晶體陣列基板。此時,薄膜設有由鉻等金屬所構 成之導電層,並利用短脈衝光轉印導電層,即可進行配線 或電極等之圖案的修正。藉此也可進行配線之斷線修復。 或在薄膜設置絶緣膜,以修正配線間之絶緣層的缺陷。再 者也可進行光罩圖案之修正。此時,亦可藉由轉印鉻等 之遮光層而進行缺陷修正。為如上述修正缺陷,係在薄膜 ϋ依所要修正之部位的材質之轉印層(著色層、遮光層、 導電層),藉此可修正各種類之圖案基板的缺陷。轉印之物 質相對於短脈衝雷射光為透明狀態時,可在薄膜與轉印層 之間追加光吸收層。也可用能吸收短脈衝雷射光之物質構 成該薄膜。此時,光吸收層為用以進行雷射去除蒸錢的推 進劑(propellant)。在該薄膜設置光吸收層之 鍵榮光體之方法。本實施形態中,如上所述藉由; 軸8 =轉,可將雷射點之位置從透明層乃變更為遮光層 54或著色層。藉此,可在檢測出缺陷後,在不移動光學系 315540 25 1262306 統或台之狀態下,將短脈衝光照射在缺陷位置。因此,可 將短脈衝光照射在缺陷之位置,而可正確地進行修復。 又,以在不同的層變更要照射短脈衝雷射光之位置的 機構作為薄膜變更機構。在該薄膜變更機構上,在固定光 學系統及台之狀態下,如本實施例所示在一個薄膜5上設 置不同之轉印層,且在用以使設有該薄膜5之薄膜捲軸: 旋轉的薄膜捲軸旋轉機構14之外,包含有如上述實施例】 所不使薄膜捲軸8移動而交換設有不同層之薄膜薄膜5的 薄膜捲軸移動機構。再者,更包含有使光學系統及基板台 連動而使雷射之照射位置移動至不同之層的構件。當然可 組合上述構件來使用。 實施例3 以第7圖及第8圖說明本實施例之缺陷修正裝置及海 修士方法。與實施例!及實施例2中說明過之内容相同 ==則省略其說明。第7圖係缺陷修正裝置之構成圖。 弟8圖係顯示基板與薄膜之構成的放大剖視圖。第8圖(a ^不將短脈衝光照射在薄膜而進行缺陷修正時的構成,第 8圖(b)顯示缺陷修正之吴杯 6採用構成。在本實_巾,基板 在^ 透明玻璃基板。首先,說明光罩之製程。 _反^利_、麵等使㈣68絲。該絡膜^ 使㈣抑圖案化之光阻67。二再上設置用以 係利用旋塗機等塗布纽膜:二為感光性之樹脂等’ 光之……:猎由採用電子束或雷射 先之㈣圖錄1験顯 315540 26 1262306 :此形成第8圖所示之構成。以光阻圖案作為遮罩而蝕刻 露出的鉻膜68,即形成遮光圖案。去除光阻後完成光罩。 在本實施例中說明修正設在光阻67之一部分的白缺 陷66的方法。在光阻圖案之一部分有針孔等之白缺陷% 時,白缺陷66下之鉻膜68會在鉻膜蝕刻時受到蝕刻。因 此,在光阻有白缺陷之情況下直接進行钱刻時,光阻圖宰 之白缺陷部分會變成光罩之白缺陷。以下說明為防止該光 罩之白缺陷而修正光阻圖案之白缺陷的方法。在本實施例 中i設有光阻顯像後之光阻圖案的光罩用之基板6㈣置 在〇 7上本貫她例之缺陷修正裝置之缺陷檢測機構係具 備k光源9及CCD照相機η等。缺陷修正機構係具備短 脈,雷射光源1及光束成形機構2等。從燈光源9發出之 觀务'用之白色光係藉由半反射鏡i丨射人對物透鏡4。該光 係由對物透鏡4聚光並透過薄膜5射人基板6。以CCD照 相機檢測在基板6反射之光,與實施例i同樣地判斷缺陷 之有無…係XY台,可檢測出基板6之整個面上的缺 在基板6上設置薄膜5。該薄膜5係藉由空氣噴出機 構13使乳體贺出而與基板6之間隙成為心爪程度。光 阻67係由通常的樹脂等形成’因此表面呈凹凸狀,但藉由 使用工•出機構13使薄膜5與基板6接近,可使薄膜5 =基板之間隙成為適#距離。不會有因加㈣而對光阻圖 案造成料的情形。因此可精密度佳地進行轉印。 該薄膜5係捲繞在可旋轉之薄膜捲軸8。薄膜5係如 315540 1262306 貫施例2所示,設有透明層及轉印層。在檢測缺陷時,來 自> 燈光源9之光係透過透明層的部分照射在基板,再與實 施例1 -樣用CCD照相機12檢測出該光以進行缺陷檢 測。在進行缺陷修正時,使薄膜捲轴8旋轉,使轉印層移 動至雷射點之位置。來自短脈衝雷射光源1之短脈衝光係 藉由光束成形機構2而成形成與缺陷形狀相同之形狀的點 狀光,且射入半反射鏡3。然後,藉由半反射鏡3而朝美 板6之方向反射,且在對物透鏡4聚光而射入薄膜5。來 自短脈衝雷射光源i之短脈衝光與來自燈光源之照明光係 在同轴上,因此可將短脈衝雷射光照射在與所檢測到之缺 陷位置相同的位置,而可正確地進行缺陷之修正。在薄膜 5妝射短脈衝雷射光的狀態如第8圖(a)所示。 在,,在薄膜5之基板側之面設有矽層%。該矽層兄 具有可藉雷射照射而轉印在基板6之轉印層的功能。二 且,石夕層56會轉印在光阻67之白缺陷%部分,在進行鉻 版68之姓刻時,可防止鉻膜68曝露在钱刻液中。鉻膜μ 之#刻液例如可使用硝酸㈣水溶液等之酸。因此最好 用對钱刻液㈣性之材f。可使”、金屬、半導體 化物或有機物等。將該等物質預先塗布在薄膜$上。又, 在進行乾飯刻之情形,亦最好使用錢刻耐性之材質。, 將來自短脈衝雷射光源!之短脈衝光予以聚光,、並昭 ,在檢測出缺陷之部位上之薄膜5。短脈衝雷射光源ι虚 貫,例1同樣地可使用YAG雷射。並❹YAG雷射之3 倍局譜波之355㈣來照射短脈衝光。藉由雷射去除方 315540 28 1262306 式,從薄膜5去除與缺陷形狀相同部分之石夕層%,且蒸錢 在白缺陷66之區域,而轉印在鉻膜68上。因而形成第$ 圖(b)所示之構成,在有白缺陷66之部位設置轉‘有矽層 56之修正部69。藉由在此狀態下進行蝕刻,可防止修正曰部 69下之鉻膜68曝露在蝕刻液中,並可使鉻膜68殘留作為 遮光膜。也就是說,鉻膜68之修正部69具有光阻之功能…, 因此可修正白缺陷。藉此,可正確形成鉻圖案。然後,%去 除光阻67及修正部69。藉由上述方法可正確地形成光罩 之圖案:而可提高光罩之生產性。又,藉由使用光罩,可 改善半導體裝置或液晶顯示裝置之生產性及良率。又,在 修正圖案邊緣時,可比缺陷部分更廣泛地蒸鍍矽層。然後 在蝕刻鉻膜68後,藉由雷射去除方式去除超出之部分的鉻 膜,以形成圖案邊緣。 口 藉由上述方法,可防止白缺陷(鉻圖案之缺陷)的產 生以往係因修正光罩之白缺陷,故需要雷射cVD、FIB 沈積、點曝光或剝離(lift_off)等部分成膜技術,但如本實 施例所示在缺陷檢査裝置之一部分增加缺陷修正機構,可 以簡單之構成穩定地進行缺陷修正。且可將雷射正確地照 射在與檢測出缺陷之部位相同之位置,因此可進行穩定之 修復。在本實施例中,亦具備有與實施例丨同樣地具有波 長可變濾光器,可將來自燈光源9之光作為加熱用。 實施例4 以第9圖及第1 〇圖說明本貫施中之圖案基板之缺陷修 正方法,第9圖及第1〇圖顯示修正缺陷之步驟中的缺陷部 315540 29 1262306 刀的構成之放大剖視圖。本實施例之缺陷修正裝置的構成 與實施例1相同。而且,與實施例!同樣地檢測出彩色遽 光片基板上之異物或缺陷,並透過薄膜將短脈衝光照射= 該異物或缺陷。因此,利用雷射去除方法可約略同時去除 薄膜5a之一部分與異物。由此形成第9圖所示之構成,2 薄膜5a設置開口部。Since the shape is such that the shape of the opening of the film 5 can be formed into a shape similar to that of the defect shape or the R shape. By removing the T-ray, the portion of ^=65 and (4) can be roughly simultaneously. The cut foreign matter is detached from the substrate through the opening of the film 5a as shown in Fig. 3 (8). Further, since the periphery of the portion is covered by the film, the object is less likely to adhere to the periphery of the correction portion 315540] 9 l2623〇6 and becomes a new defect. In this way, the laser removal method can be used to remove the film and defects. Further, the removed foreign matter 65a may be one piece: there is also a case where a large number of fragments are formed and fall on the film. The power of the short-pulse laser light source and 1 can be gradually adjusted to open on the film 5a, and can also be adjusted to simultaneously remove the opening of the film and the removal of foreign matter. When the film 5a is gradually opened, as shown in Fig. 3(c), the film 5a is formed into a thin state, and then the short pulse light is irradiated at a portion where the film 5 is thinned to remove foreign matter. When the opening size is small, the opening portion can be provided while the film 5 is being fed. If the far-ultraviolet film is used, the film 5a will be chemically decomposed. Therefore, when the foreign matter is removed and the surface of the substrate is scraped, the far-ultraviolet rays can be removed to remove the debris of the film. Further, when the foreign matter 65 is transparent, even if the short-pulse light is irradiated to the foreign matter, the absorption of light cannot be performed, so that the laser is not removed. On the other hand, in the film 5, a film that absorbs light such as polyacrylonitrile is used, and when the short film is irradiated with a short pulse of laser light, the film is opened by a laser removal method while the film is opened. The gas or the sheet that jumps forward is pushed to the substrate in an instant, and the substrate is removed from the substrate by the subsequent debounce. The foreign matter 65 and the color layer 61 on the substrate are removed by the above treatment. The white light is missing, in order to correct the white defect 66, such as the younger brother 4, no, the film reel 8a moves in a direction similar to the film reel, and the sub-wave version 5 b moves to the Thunder powder 1 m (four) to the field shot point 15 The location. Then, the short pulse light is incident on (4) 5b to correct the white defect 66. The white defect is illustrated in Figure 5: the positive method. The first corpse shows an enlargement of the structure between the film 5 and the substrate 6. 'view. The colored layer 5 ι is applied to the surface of the enamel film 5b on the substrate side. Film 335540 20 1262306 It is known that a polyethylene film having a thickness of 1 G to 2 () is used as a substrate thin film and a photoresist having a thickness of about 1 Am is used as the dry film of the colored layer 51: first resistance. The film 5b is preferably made of a material that does not absorb short-pulse light, and is not limited to polyethylene, but may also be made of polypropylene or a PET film, and the thickness is not limited (the thickness of the layer 51 can also be used with the substrate side). The material of R is substantially the material of (4). #This can prevent the liquid crystal display. Of course, the material and thickness of the film 5b and the coloring layer 51 are not limited: the air ejection 2 that is ionized by the air ejection mechanism 13 is close to the substrate. 6. Therefore, _5b contacts the protruding portion of the substrate 6 and forms a minute space between the colored layer portion (defective portion) of the substrate and 'the beam forming mechanism is formed to be substantially in phase with the defective portion. The short pulse light of the shape is irradiated on the film 5b. The output of the short pulse light is adjustable: the color layer 剥离 is peeled off from the film by laser removal. The color layer 51 peeled off from the film is flying on the film 5b and the substrate. 6*!, and landing on the defective part. By this, the red color layer 51a: can be transferred to the defective portion. When a sufficient amount of the coloring layer 5U cannot be transferred by primary transfer, the film reel can also be used. 8 rotation 'send film 5b in the gamma direction At the same time, the short pulse light is irradiated. Further, by irradiating the short pulse light to the film 5b from the surface opposite to the surface on which the colored layer 51 is provided, the substrate 6 can be made close to the thin: 5b. Between the ruthenium film 5 and the substrate 6. Since the gap is a small distance, the number of collisions between the molecules in the atmosphere and the coloring layer 51a is small. Thereby, the process of defect correction can be performed by using the laser in the atmosphere to remove the vapor deposition. Furthermore, by the air The ejection mechanism 13 is close to 'therefore, the fine adjustment of the interval can be made 315540 21 1262306. Therefore, the defect correction can be stably performed without being affected by the surface state of the substrate. In the present embodiment, the lamp light source is adjusted in advance by this embodiment. The color layer 51 of the film 5 can heat the color layer 51 of the film 5. For example, the infrared ray can be used to illuminate the light from the light source 9 by the wavelength variable filter. The coloring layer 5 of the defective portion is heated, whereby the adhesion to the substrate when the substrate 6 is on the substrate 6 can be improved. χ, the light from the lamp source 9 is made into the film % and the coloring layer 51 has a low absorption rate. Wave with high wavelength and high absorption rate of the substrate The long light can be used for the substrate 6 to be twisted. This can improve the profitability of the substrate when it falls on the substrate 6. Thus, in the defect correction device of the present invention, the ccd camera can be adjusted for access. The output of the light source 9 and the wavelength of the light source are heated. 〇2: The defect correction of a part can be corrected by the movement of the film reel 8 without the optical system or J, so that the above can be observed under the object lens. Action: Use only one short pulse Rayleigh lack;:,: It can remove foreign matter and color, and can perform white defect and == Again, the correction action is light, and can be detected by CCD camera 12 θ film 5 a and film; b two = into 5 rows: the first and the fourth figure only show the film 2 with G and B: but in addition to R, the film can be further layered 5 and thin ^ The defect of the light-shielding portion for correcting the defect of BM is also the same as that of the color layer of G' B and the color layer of the belly. The correction of g and b can be achieved by using the photoresist of the pigment of the ancient color. For the legs, a film with a material such as chrome that can block visible light is used. By means of 315540 22 1262306, the defects of m, G, B and all of the defects can be corrected by simply modifying the entire area of the substrate. And the correction, so you can short the door, 隹一: _ can be all the defects into the text ^ between the correction, has a position because she uses the laser to remove the correction, so = habitually The substrate is in close contact. Due to the influence of 2, the defect correction is performed stably. The surface state is set to be the same as that of the 佥辛夫2 attached to the substrate. Therefore, it is possible to repair and feast the quality and quality of the same display characteristics.曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用. Of course, it is also possible to use a pattern substrate in a color scheme. For example, correction of a glare body such as a PDP or a sonic ray tube can also be utilized. Further, in the above-described description, the opaque material may be an irregularity/page 2 composed of a transparent material, and a coloring layer or the like which is not provided with excellent precision may be removed. The repair of the defect: the foreign matter or the like is referred to as a defect. By removing the defect, the defect correction device is changed in the defect described in the first embodiment. The configuration of the present embodiment is the same as that of the embodiment. The description will be made with reference to Fig. 6 to illustrate the film used in the defect correcting device of the present embodiment. Fig. 6 is the structure of the film 5 315540 23 1262306 ΐ: bribe view: in Fig. 6, '51 is the color layer of R, 52 G is 53 for the color layer, 54 for the light shielding layer, and 55 for the transparent layer. In this embodiment, the color layers of R, G, and B, and the light layer and the transparent layer are provided on the film. A film is used to correct the defect of the pixel and the bm portion of the color filter substrate GB. Further, the color layer 52 of the color layer 0 of the color layer 52, the color layer 53 of the B layer, the light shielding layer 54 and the transparent layer 55 are respectively formed. The film 5 has a base film and a color layer 51 provided on one side of the base film, a color layer 52 of G, a color layer 53 of B, and a light shielding layer 54. A part of the color layer 5i, the color layer 52, the color layer 53 of the B, and the light shielding layer 54 are actually formed. The color layer 51 provided on the thin/upper R color layer 51, the G coloring layer 52, and the B coloring layer 53 are disposed with a gap therebetween, and have a transparent layer 55 composed only of a base film therebetween. The layer 55 can observe the defective portion by the CCD camera 12 through the aperture from the light source 9. It can also be provided with a layer other than the base & film. The material of the far base film, the colored layer and the light shielding layer can be used with the above embodiment. Similarly, the film 5 is wound around the film roll 8: in the same manner as in the above embodiment, the surface on which the color layer and the light shielding layer 54 are provided is disposed so as to face the substrate 6. By rotating the film roll 8, The position of the laser spot which is sent to the film in the front direction is aligned with the color layer 5 of the transparent layer 55, r, the color layer 52 of G, the color layer 53 of B or the light shielding layer 54. When the defect is detected and the foreign matter is removed, The transparent layer 55 is located at the position of the laser spot. If the transparent layer 55 is a light permeable material from the light source 9, the light can be detected by the CCD camera 12. Then, in the same manner as in the first embodiment, 315540 24 1262306 After the defect is detected, it is removed by laser removal. The film 5 is transparent, and is opened to remove foreign matter. Thereby, the black defect becomes a white defect. The thin shaft 8 is rotated to make the coloring layer or the light shielding layer corresponding to the defective portion; ", occupying the position. Then, in the same manner as in the above embodiment, the colored layer or the light shielding layer 54 is transferred by laser removal to correct white defects. Further, it is preferable to output a laser or a filter or the like so as to provide a filter or the like. The base film does not open when the white defect is repaired. The defect correction device of the present invention is not limited to the color filter substrate, and may be used for other pattern substrates. For example, a thin film transistor for a liquid crystal display device may also be used. Array substrate. In this case, the film is provided with a conductive layer made of a metal such as chrome, and the conductive layer is transferred by short pulse light to correct the pattern of the wiring or the electrode. This can also be used to repair the wire breakage. Or an insulating film is provided on the film to correct the defect of the insulating layer between the wirings. Further, the mask pattern can be corrected. At this time, defect correction can also be performed by transferring a light shielding layer such as chromium. In order to correct the defect as described above, the film is converted into a transfer layer (a colored layer, a light-shielding layer, and a conductive layer) of a material to be corrected, whereby defects of various types of pattern substrates can be corrected. When the transferred substance is in a transparent state with respect to the short-pulse laser light, a light absorbing layer may be added between the film and the transfer layer. The film can also be constructed of a material that absorbs short pulsed laser light. At this time, the light absorbing layer is a propellant for performing laser removal of the money. A method of providing a key glomerium of a light absorbing layer in the film. In the present embodiment, as described above, the position of the laser spot can be changed from the transparent layer to the light shielding layer 54 or the colored layer by the rotation of the shaft 8 = rotation. Thereby, after the defect is detected, the short pulse light is irradiated to the defect position without moving the optical system 315540 25 1262306 or the stage. Therefore, the short pulse light can be irradiated to the position of the defect, and the repair can be performed correctly. Further, a mechanism for changing the position at which short-pulse laser light is to be irradiated at a different layer is used as the film changing mechanism. In the film changing mechanism, in the state of fixing the optical system and the stage, a different transfer layer is provided on one film 5 as shown in this embodiment, and the film roll for providing the film 5 is rotated: In addition to the film reel rotating mechanism 14, a film reel moving mechanism in which the film reel 8 is moved without changing the film film 5 having different layers as in the above embodiment is included. Further, a member for moving the irradiation position of the laser to a different layer by interlocking the optical system and the substrate stage is further included. Of course, the above components can be combined for use. (Embodiment 3) A defect correction device and a sea monk method of this embodiment will be described with reference to Figs. 7 and 8. With the embodiment! The contents described in the second embodiment are the same as ==, and the description thereof is omitted. Fig. 7 is a configuration diagram of the defect correcting device. The figure 8 shows an enlarged cross-sectional view showing the structure of the substrate and the film. Fig. 8 (a) a configuration in which short-pulse light is not irradiated onto a film to perform defect correction, and Fig. 8(b) shows a configuration in which a defect correction of a cup 6 is employed. In the present embodiment, the substrate is on a transparent glass substrate. First, explain the process of the reticle. _Reverse _, _, etc. make (4) 68 wire. The film ^ (4) to suppress the patterned photoresist 67. Secondly set up to coat the film with a spin coater : The second is photosensitive resin, etc. 'Light'...: Hunting by electron beam or laser first (4) Catalogue 1 315540 26 1262306: This forms the composition shown in Figure 8. Using the resist pattern as a cover The exposed chrome film 68 is etched to form a light-shielding pattern. The photoresist is removed after the photoresist is removed. In the present embodiment, a method of correcting the white defect 66 provided in a portion of the photoresist 67 is described. When the white defect of the pinhole or the like is %, the chrome film 68 under the white defect 66 is etched while the chrome film is etched. Therefore, when the photoresist has a white defect, the white defect of the photoresist pattern is directly performed. Part of it becomes a white defect of the reticle. The following description is to repair the white defect of the reticle. A method of white defect of a positive photoresist pattern. In the present embodiment, a substrate 6 for a photomask having a photoresist pattern after photoresist development is provided, and a defect detecting mechanism of the defect correction device of the present invention is disposed on the crucible 7 The k-light source 9 and the CCD camera η are provided. The defect correction mechanism includes a short pulse, a laser light source 1 and a beam shaping mechanism 2, etc. The white light that is emitted from the light source 9 is used by the half mirror i The human lens is incident on the object lens 4. The light is collected by the objective lens 4 and transmitted through the film 5 to the human substrate 6. The light reflected on the substrate 6 is detected by a CCD camera, and the presence or absence of defects is determined in the same manner as in the example i. In the XY stage, it is possible to detect that the film 5 is provided on the entire surface of the substrate 6. The film 5 is made to eject the milk by the air ejecting mechanism 13 and the gap with the substrate 6 becomes a claw. 67 is formed of a normal resin or the like. Therefore, the surface has an uneven shape. However, by using the working and discharging mechanism 13 to bring the film 5 into close contact with the substrate 6, the gap between the film 5 and the substrate can be made a suitable distance. (4) The situation in which the photoresist pattern is caused by the material. Therefore, the precision is excellent. The film 5 is wound around a rotatable film reel 8. The film 5 is as shown in Example 2 of 315540 1262306, and is provided with a transparent layer and a transfer layer. When detecting defects, from the light source of > The light of 9 is irradiated onto the substrate through a portion of the transparent layer, and the light is detected by the CCD camera 12 in the same manner as in the first embodiment to detect the defect. When the defect is corrected, the film reel 8 is rotated to make the transfer layer Moving to the position of the laser spot. The short-pulse light from the short-pulse laser light source 1 is formed into a spot-like light having the same shape as the defect shape by the beam shaping mechanism 2, and is incident on the half mirror 3. Then, The half mirror 3 reflects the direction of the sheet 6, and collects light on the objective lens 4 to enter the film 5. The short pulse light from the short-pulse laser source i is coaxial with the illumination light from the lamp source, so that short-pulse laser light can be irradiated at the same position as the detected defect, and the defect can be correctly performed. Correction. The state in which the short-pulse laser light is projected on the film 5 is as shown in Fig. 8(a). On the other hand, the surface of the film 5 is provided with a layer %. The layer brother has a function of being transferred to the transfer layer of the substrate 6 by laser irradiation. Secondly, the stone layer 56 is transferred to the white defect% portion of the photoresist 67, and when the chrome plate 68 is inscribed, the chromium film 68 can be prevented from being exposed to the money engraving liquid. As the etching solution of the chromium film μ, for example, an acid such as a nitric acid (tetra) aqueous solution can be used. Therefore, it is best to use the money for the liquid (four) sex material f. It can be made ", metal, semiconductor compound or organic matter, etc. These materials are pre-coated on the film $. Also, in the case of dry cooking, it is also best to use a material that is resistant to puncture. It will come from a short pulse laser source. The short pulse light is condensed, and the film 5 on the part where the defect is detected. The short-pulse laser light source is imaginary, and the YAG laser can be used in the same manner as in Example 1. It is 3 times that of the YAG laser. 355 (4) of the local spectrum wave to illuminate the short pulse light. By the laser removing method 315540 28 1262306, the same portion of the defect shape is removed from the film 5, and the money is evaporated in the area of the white defect 66, and the transfer On the chrome film 68, the structure shown in Fig. (b) is formed, and the correction portion 69 having the ruthenium layer 56 is provided at the portion having the white defect 66. By performing etching in this state, the correction can be prevented. The chrome film 68 under the ridge portion 69 is exposed to the etching liquid, and the chrome film 68 can be left as a light shielding film. That is, the correction portion 69 of the chrome film 68 has a function of light resistance, so that white defects can be corrected. Therefore, the chrome pattern can be formed correctly. Then, % removes the photoresist 6 7 and the correcting portion 69. The pattern of the photomask can be correctly formed by the above method: the productivity of the photomask can be improved. Moreover, the productivity and yield of the semiconductor device or the liquid crystal display device can be improved by using the photomask. Further, when the edge of the pattern is corrected, the ruthenium layer may be more widely evaporated than the defect portion. Then, after the chrome film 68 is etched, the excess chrome film is removed by laser removal to form a pattern edge. The above method can prevent the occurrence of white defects (defects of the chrome pattern) in the past because of the white defect of the correction mask, so a partial film forming technique such as laser cVD, FIB deposition, spot exposure or lift_off is required, but In the embodiment, the defect correction mechanism is added to one of the defect inspection devices, and the defect correction can be stably performed in a simple manner. The laser can be accurately irradiated at the same position as the portion where the defect is detected, so that stable repair can be performed. In the present embodiment, a wavelength variable filter is provided similarly to the embodiment, and light from the lamp light source 9 can be used for heating. FIG. 1 and FIG. 1 are views showing a method of correcting a defect of a pattern substrate in the present embodiment, and FIG. 9 and FIG. 1 are enlarged cross-sectional views showing a configuration of a defect portion 315540 29 1262306 in the step of correcting a defect. The configuration of the defect correcting device is the same as that of the first embodiment. Further, similarly to the embodiment, the foreign matter or the defect on the color filter substrate is detected, and the short pulse light is irradiated through the film to the foreign matter or the defect. The film removing method can remove a portion of the film 5a and foreign matter at about the same time, thereby forming the configuration shown in Fig. 9, and the film 5a is provided with an opening.

、、利用液體分配器從其上滴下使缺陷部分著色之樹脂遂 液17。滴下之樹脂溶液丨7係從薄膜5a之開口部附著在連 ,6,同時掂散附著在薄膜“上。例如,以可朝水平方^ 移,之方式將液體分配器之喷嘴設置在缺陷修正裝置,卫 如第9圖⑻所示使喷嘴16移動至薄膜&之開口部上方 嘴出使比該開π部更廣之區域著色的樹脂溶液17。該樹月, 溶液17係著色成與要缺陷修正之彩色濾光片之著色層顏 “致相同的彥員色’在此係著色成紅色。該樹脂溶液17 :稭由调整樹脂之濃度而具有適當之黏度。使樹脂溶液1 =嘴附著在基板之方法,除了滴下樹脂溶液17之方法 夕’也有使用喷霧喷嘴喷霧微米級之微粒子的方法。而且 :二者在基板6之樹脂溶液17ait度乾燥。言亥乾燥步驟係 T 9圖(c)所示,可藉由使用燈光源$之光加熱使樹脂溶 Γ/乾燥。也就是將來自燈光源9之光照射在樹脂溶液 二?部或一部分以使之乾燥。此時’可將對物透鏡朝 向各動’使照射光之區域變化,而調整要使之乾烨 ⑺乾圍^切可藉㈣出機構13使空氣嘴出而使樹脂溶液 乙、木藉由使樹脂溶液17a乾燥,溶劑會蒸發且附著 315540 30 1262306 邛位會縮小,因此樹脂溶液i7a|好附著成比預定膜 之厚度。 乾燥後,可將來自短脈衝雷射光源1之短脈衝光照射 在開口部之邊緣部分,而去除樹脂溶液17a。也就是如第 圖⑷所不’在開口部中心,在不照射短脈衝光之狀態下 ^陷部分之樹脂溶液17a殘存,並且將短脈衝光僅照射 ,開口部之周邊附近,以去除邊緣部分之樹脂溶液H 杜在短脈衝光之光路中設置可動之反射鏡或透鏡等光 ^ _以利用该光學零件控制短脈衝光之照射位置。例 ’糟由使半反射鏡3之傾斜產生變化,可進行雷射點 周正。错由光束成形機構2及對物透鏡4使雷射 在=小’並使用上述之光學零件使短脈衝雷射光照射 全周。藉此,在開口部之中心的樹脂溶液- 雷射去除;;力開:部之邊緣附近之樹脂溶液"a可藉由 在去除門口1= 由此形成第10圖⑷所示之構成。 臈捲車由^轅 附近的樹脂溶液…之狀態下,使薄 :轴“疋轉而使薄膜九之開口部移動。然後,… 而將薄臈5a從基板6去除。藉此,如第 二 形成在缺陷部分附著樹脂的 θ 不 以修正缺陷。如上所述開口部邊缘=二修正層i7b 藉由雷射去除方式加以去除,: 可防止_5a㈣在基板6__二/=^,並 除方式加ri i ^ /战缺陷。又,猎由雷射去 口部之中心^之樹脂溶液…會再附著在薄膜化上或開 付,因此不會形成新的缺陷。再者,藉由照 315540 31 1262306 射短脈衝光以去除樹脂溶液17a,因此可調整樹脂溶液m 之附者部分之形狀。藉此,可正確地修正缺陷。 在本實施例之缺陷修正方法中,對於使樹脂溶液附著 之位置的容許量變大。且因一次吹出較大量之樹脂,故即 1是微小的修正也可使用較大之噴嘴。因此比吹出微小量 時所需之開口微小的喷嘴更容易管理。藉由光束成形機構 ^可5周整薄膜之開口部的大小,因此可將脈衝雷射光以任 意形狀照射在薄膜。因此’可使薄膜之開口形狀配合畫素 形狀,而可容易地修正與畫素形狀大致相同之區域的矩形 區域。藉由加熱樹脂溶液17a然後使之乾燥,在剝離薄膜 μ,可防止附著在基板之缺陷部分的樹脂黏在薄膜側、, 而從基板之缺陷部分剝離的現象。又,為去除積在嘴嘴前 端部之樹脂或使樹脂溶液為規定濃度,必須在缺陷部位以 外處進行空打’但在修正部位之周邊㈣膜上進行空打, 可:短空打至修正時之時間差。以CCD照相機觀察;打時 之者地點,可修正從喷嘴喷出至著地時所產生之位置偏 移。如此藉由採用本實施例之缺陷修正方法,可進行言 岔度之缺陷修正。 在基板附著樹脂溶液丨7a後或使樹脂溶液乾燥後,可 利用刮刀(squeegee)等將樹脂刮入至開口部,或以刮刀去°除 多餘之樹脂溶液。因此,即使在喷出量過多時,藉由樹脂 溶液中之溶剤的比例(乾燥後之縮小率)與薄膜之膜厚等, 可控制附著在基板6之缺陷部分的樹脂溶液17&之附著 量。也就是可控制最終之修正層17b的膜厚,而可正確地 315540 32 1262306 :::卞因此’町控制缺陷修正部分之顏色及透過率。 3、月曰洛液附著在_上的附著點即使從薄膜開口部朝刮刀 夕力開女口位置方向偏移亦無妨。在此情況下,也可以利 :刀等將樹脂刮入至開口部,而使樹脂溶液na均句地 附著在基板6之缺陷部分。 α / Ί刀之材f係採用防樹脂溶液之㈣或鐵氟龍 名)寺材料構成,薄膜之材質如係以潤濕性比聚酸亞 Μ之刮刀高之材料構成,則可使所刮取之樹脂殘留在薄 、=猎此,可使樹脂不會留在刮刀上,故無須進行刮刀 ^潔’或可延長清潔之周期。χ ’因多餘之樹脂係以附 :在缚膜5a之狀態下殘留,且與使料之薄膜化一同捲 ’故不會附著在基板6之缺陷部分以外的部分,不合形 成新的缺陷。因藉由交換使用過之薄膜5a可回收多朗樹 脂,故樹脂不會附著在裝£,可容易地進行維修。 又,從喷嘴16將樹脂溶液17喷出至基板時,樹脂溶 液17a會因表面張力而形成圓球狀,而有樹脂溶液m不 能接觸基板6之情形。此時’最好使薄膜^之開口部周邊 變薄。以第11圖說明上述步驟。如第u圖⑷所示,藉由 雷射去除方法使薄膜5a之開口部周邊部分變薄。藉由將來 自短脈衝雷射光源!之短脈衝雷射光照射在薄膜5&之開口 部周邊,可去除-部分而形成第η圖⑷所示之構成。此 時,短脈衝雷射光源!之輪出係設定為比貫穿薄膜化而設 置開口部時低。然後’移動雷射點之位置使短脈衝雷射光 源1照射在開口部之全周。藉由使薄膜5a之開口部周邊變 315540 1262306 ::接Π:較厚的情況時可使基板6與樹脂溶液-相接觸。因而形成第u圖( 履i7a 膜5a設置較厚部分及較 “寸’因在薄 液Ha會附著在段差上。故會形成段差,且樹脂溶 & +、r η 然後如弟11圖(C)所示照射來i 光源9之光,並使之#、(^ 、 尤工便之乾煉。之後的步驟因 步驟相同故省略其說明。 弟10所不之 $旦容,Α π六日 U此即使所附者之樹脂溶液17a 里夕也可谷易地使之附著。 戈者,也可如弟12圖所示你哈峰ι + 樹脂溶液η附著在:Γ 出微粒子而將 在基板6。此時’如第u圖⑷所示利用 运射去除方式在薄膜化設置開口部。如第12_)所示使 Μ '產生微粒子’使之從開口部上方落至基板6。因 此,即使薄膜5a較厚時,樹脂溶液%也可㈣在基板6 之缺陷部分。然後如第12_所示,照射來自燈光源9 之先,使之乾燥。之後之步驟因與第1〇圖所示之步驟相同 故省略其說明。因此,即使附著所需之樹脂溶液Pa的量 較多時,也可以容易地使之附著。 又在上述只轭例中,係將著色成紅色之樹脂溶液^ & 攸育嘴16附著在基板6,但也可以著色成藍色、綠色或黑 色口此,可進行監色之著色層、綠色之著色層及ΒΜ之 缺fe知正。又,不限定在彩色濾光片用基板,也可以使著 色成與所要修正之圖案對應的顏色之樹脂溶液附著在基 板。藉由使該樹脂溶液乾燥,溶液中之水分會蒸發,樹脂 即固著在缺陷部分。當然,樹脂溶液以外之溶液也可以, 要透過薄膜5a之開口部使與所要修正之圖案對應的修 315540 34 1262306 正液附著在基板6即可。又,也可以利用喷嘴從上滴下修 正液而使之附著。藉由使與要修正之圖案對應而著色的修 正液附著在基板6,可修正任意顏色之圖案。且藉由調整 短脈衝雷射光之點而調整開口部之大小,能以與檢測出之 白缺陷相同大小之樹脂溶液附著,而可精密度佳地修正白 缺陷。因此,即使在修正彩色濾光片基板等的情形,也不 會使顯示品質劣化。 實施例5 以第13圖說明本實施例之圖案基板之缺陷方法。第 13圖顯示修正缺陷之步驟中的缺陷部分構成的放大剖視 圖。本實施例之缺陷修正裝置之構成與實施例丨相同。與 實施例1同樣地檢測出彩色濾光片基板上之異物或缺陷了 透過薄膜照射短脈衝光在異物或缺陷部分。因此可利用雷 射^除方式約略同時去除薄膜化之一部分及異物。因此二 成第13圖(a)所示之構成,在薄膜5a上設置開口部。在本 實施例中,與上述實施例同樣地,設置有可朝水平方向移 動液體分配器之喷嘴16。 在此狀態下使喷嘴16移動至開口部上。因此形成第 13圖(a)所示之構成。在分配器之喷嘴16的前端同樣附著 有著色成與要修正圖案對應之顏色的樹脂溶液17。該樹脂 溶液17會從喷嘴16之前端壓出。在本實施例中噴嘴μ曰 係以可朝上下方向移動之方式設置。使該噴嘴16朝下移動 亚使之與基板6接近,並使樹脂溶液17與薄膜&及基板 6接觸。又’也可以使基板6之台朝上移動,而使基才^6 315540 35 1262306 與贺嘴16相接近。因此如g 13圖⑻所示,透過開口部使 樹脂溶液Π續著在基板6之缺陷部分。而且,當使喷嘴 16朝上移動或使台朝下移動而隔開基 離時,附著在嗔嘴16之前端的樹脂容液17a大=回= 奪16側。因此形成第13圖⑷所示之構成,與實施例4同 樣地樹脂溶液17a會附著在缺陷部分。在本實施例中即使 利用較大之喷嘴滴下時,也可限制樹脂溶液⑺附著在基 板6的附著量。因此’可使微量之樹脂溶液附著在基板6, 且容易地控制所附著之樹脂層的厚度。之後,與實施例4 同樣地使用短脈衝雷射光源i進行開口部周邊之樹脂溶液 的去除,並使用燈光源9進行樹脂溶液之乾燥。然後, 使溥膜5a旋轉並從基板6剝離,使纟7移動將薄膜“從 基板6去除。因此如第13圖⑷所示,使著色之樹脂附著 在缺陷部分,而修正設有修正層17b之著色層的缺陷。藉 由上述裝置構成及缺陷修正方法’可正確地修正圖案基板 之白缺陷。又’藉由將修正該等缺陷之步驟追加在圖案基 板之製程中,可製造無缺陷之圖案基板。 實施例6 以第15圖說明本實施例之缺陷修正裝置。第1 $圖係 本貫她例之彩色濾光片基板之缺陷檢査裝置之構成的^式 圖。因構成與在上述實施例說明過之構成内容相同故省略 其說明。本實施例中係與上述實施例同樣地利用雷射去除 方式去除薄膜上之異物後,藉由加熱塊從所形成之開口部 上對設在不同之薄膜的著色層進行熱轉印。 315540 36 1262306 在本實施例中,除了第1圖所示之缺陷檢査裝置夕卜 如第15圖所示設有具有在薄膜5上著色之轉印層的薄膜 18及用以進行熱轉印之加熱塊2〇。薄膜18係安裝在薄膜 捲軸19,藉由使該薄膜捲軸19旋轉而送出薄㈣。薄膜 1 8及加熱塊2G會滑動,而可在基板之缺陷位置上移動。 例如,可將對物透鏡4、空氣噴出機構13、薄膜捲軸19 f加熱塊2〇連結在—個滑動體(未圖示),而使之滑_ 動。去除異物時可將對物透鏡4及空氣喷出機構13配置在 缺陷位置上,在轉印轉印層時,使滑動體移動而將薄膜以 :加熱塊20配置在缺陷位置上。當然,也可藉由滑動體 =移動機構使之移動。又,也可在不使對物透鏡4及空 ::出機構13移動之狀態下,使薄膜以與加熱塊 至空氣喷出機構13下。 Μ 使薄膜18移動至缺陷位置上時,形成第16圖所示之 1"二基板6與薄膜之構成的上視圖。使薄膜 設I在二 可使薄膜18配置在薄膜5上。透過 相對白配:立Γ之缚膜5之開口部15使薄膜18與基板6 =向配置、,在開口部15之位置設有薄膜以之轉印層。 缺陷部^過開口部15將薄膜18之轉印層轉印在基板之 的位置有從缺二在二5。, 前,最好預先固j =:膜:時,使薄膜18移動之 疋基板6與⑽5之位置。固定基板6與 3】5540 37 1262306 薄膜5 >古、、i . 、 /有:在空氣喷出中將矽橡膠等載置在薄膜5 之方法;使薄膜5帶電以靜電力固定在基板6之方法。 载置石夕橡膠之方法係將石夕橡膠載置在開口部之兩側。 措11可固定薄膜5之位置。又,以靜電力固定薄膜5之方 二=在二膜捲轴19旋轉而送出薄膜5時,利用摩擦 6金, 。1备由帶電之薄膜5的靜電力,固定基板 13”而=5之位置。在本實施例中,不使用空氣噴出機構 利用上述方法固定基板6與薄膜5,而 開口部15 A m $ + 你得联)石又置 是薄 。再者’也可以在開口部15之兩側也就 5 ^ 18不會重疊之部分喷出空氣,以固定基板6與薄膜 薄膜18係具有利用熱轉印進行轉印之轉印層的薄 =例如可使用富士薄膜社製之托來沙(登錄商標)。藉由 =膜可提升轉印層之密接性。以第17圖說明該薄膜Μ 之構成。 “缚膜18具有形成在基底層18e上之緩衝層i8d。在缓 衝層18d上設有氧遮蔽層18c ’且在氧遮蔽層18c上設有 由,種顏料著色之轉印層18b。轉印層18b係由例如感光 性樹脂所形成。轉印層18b之顏料係依所要修正之彩色遽 光片之晝素而著色。將該轉印層18b轉印在基板6以進= 白缺陷之修正。在轉印層18b上壓接有表面保護用之聚丙 =之覆蓋薄膜18a。X,為防止因剝離帶電所造成之塵埃 寺附者,在基底層18e背面設有電子傳導性之帶電防止層 315540 38 1262306 基底層1 8e例如由厚度約乃// m之PET所形成。緩衝 層18d可使用厚度約2〇〆m之在弱鹼中具有可溶性的熱可 塑性樹脂。藉由緩衝層丨8d可吸收基板之缺陷部分的段 差,而提升轉印層之密接性。氧遮蔽層之厚度為16“阳, 轉印層18b之厚度為2〇//m,覆蓋薄膜之厚度為[“η。 该薄膜18之構成為典型之一例,並不限定在上述構成。例 如,也可以不設置覆蓋薄膜1 8a、氧遮蔽層1 8c或靜電防 止層⑻。特別是,在配置於開口部15的薄膜18之部位 附著塵埃的現象極少,因此也可以不設置覆蓋薄膜⑻。 又,轉印層18b不限定在感光性樹脂層,只要是對應於要 轉印之圖案的著色層即可。 加熱塊20係以可上下移動之方式設置,使薄膜以之 2印層18b附著時’使薄膜18向下移動並按壓在基板“ 弟18圖顯示此時之基板6與薄膜18之構成。第18圖係顯 :缺修正部分之基板6之構成的剖視圖。在此,省略 2 18之覆蓋薄膜18a、氧遮蔽層18〇、基底層及帶電防止 之圖示。以加熱塊2〇按壓薄膜18日寺,形成第 (a)所示之構成。 u 藉由推壓加熱塊20,形成在基板6與具有轉印層之薄 馭18間夾有具備開口部丨5之薄 、 嵐Ί 辱膜5的狀怨。因此,轉印 ;8b會透過薄膜5之開口部15按壓在基板6之缺陷位 L開口部15因設置為與利用雷料除方式去除異物之部 、未相同之大小及相同位置’故需要修正之部位-致。藉由 处過薄膜5轉印轉印層18b,在 間邛中可使轉印層18b 315540 39 1262306 附著在基板6。此外,在開口部以外之區域,轉印層1朴 會附著在薄膜5之上面。 如此,藉由透過薄膜5之開口部轉印作為著色層之轉 印層18b,可防止轉印層18b附著在缺陷部位以外的區域。 因此,能以簡單之構成將轉印層I 8b僅轉印在缺陷部位, 而可正確地修正缺陷。因轉印層18b不會附著在多餘之部 位,故無須在之後的步驟中去除多餘部位的轉印層l8b, 可提南生產性。Then, the resin sputum 17 for coloring the defective portion is dropped therefrom by means of a liquid dispenser. The dropped resin solution 丨7 is attached to the opening from the opening of the film 5a, and is simultaneously adhered to the film. For example, the nozzle of the liquid dispenser is placed in the defect correction so as to be horizontally movable. In the apparatus, as shown in Fig. 9 (8), the nozzle 16 is moved to the upper portion of the opening of the film & the resin solution 17 which is colored in a region wider than the opening portion π. The tree is colored and the solution 17 is colored and The color layer of the color filter to be corrected by the defect is "to the same color" and is colored red in this case. The resin solution 17: straw has an appropriate viscosity by adjusting the concentration of the resin. The method of causing the resin solution 1 = the nozzle to adhere to the substrate, in addition to the method of dropping the resin solution 17, there is also a method of spraying the micron-sized fine particles using a spray nozzle. Further, both of them are dried at a resin solution 17ait of the substrate 6. In the drying step of Fig. 19 (c), the resin can be dissolved/dried by heating with a light source of light. That is, the light from the light source 9 is irradiated to the resin solution II? Part or part to make it dry. At this time, 'the lens of the object can be moved toward each movement' to change the area of the illumination light, and the adjustment should be made to dry (7) dry and cut. (4) The mechanism 13 can be used to make the air nozzle to make the resin solution B and wood When the resin solution 17a is dried, the solvent evaporates and the adhesion of 315540 30 1262306 is reduced, so that the resin solution i7a| is attached to the thickness of the predetermined film. After drying, the short pulse light from the short pulse laser light source 1 is irradiated to the edge portion of the opening portion to remove the resin solution 17a. That is, as shown in the figure (4), the resin solution 17a remaining in the state where the short-pulse light is not irradiated remains in the center of the opening, and the short-pulse light is irradiated only, and the vicinity of the periphery of the opening is removed to remove the edge portion. The resin solution H is provided with a movable mirror or a lens in the optical path of the short pulse light to control the irradiation position of the short pulse light by the optical component. For example, the tilt of the half mirror 3 is changed, and the laser spot is positive. The beam shaping mechanism 2 and the objective lens 4 are caused to have a laser at = small and the short-pulse laser light is irradiated for the entire circumference using the optical member described above. Thereby, the resin solution in the center of the opening portion - the laser is removed; the resin solution in the vicinity of the edge of the force opening portion can be formed by removing the door opening 1 = thereby forming the structure shown in Fig. 10 (4). In the state where the reel is in the vicinity of the resin solution in the vicinity of the crucible, the thin shaft is "turned" to move the opening portion of the film 9. Then, the thin crucible 5a is removed from the substrate 6. Thus, as in the second The θ formed on the defective portion is not modified by the defect. The opening edge = the second correction layer i7b is removed by the laser removal method as described above: the _5a (four) can be prevented from being on the substrate 6__2/=^, and the manner is removed Add ri i ^ / war defect. Also, hunting the resin solution from the center of the mouth to the mouth ^ will be attached to the thin film or the payment, so no new defects will be formed. Again, by 315540 31 1262306 The short pulse light is emitted to remove the resin solution 17a, so that the shape of the attachment portion of the resin solution m can be adjusted. Thereby, the defect can be correctly corrected. In the defect correction method of the present embodiment, the resin solution is attached. Since the allowable amount of the position becomes large, and a large amount of resin is blown out at a time, even if it is a small correction, a larger nozzle can be used, and therefore it is easier to manage than a nozzle having a small opening required for blowing a small amount. Forming mechanism ^5 Since the size of the opening of the film is large, the pulsed laser light can be irradiated onto the film in an arbitrary shape. Therefore, the opening shape of the film can be matched with the pixel shape, and the rectangular region of the region substantially the same as the pixel shape can be easily corrected. By heating the resin solution 17a and then drying it, it is possible to prevent the resin adhering to the defective portion of the substrate from sticking to the film side and peeling off from the defective portion of the substrate by peeling off the film μ. The resin at the tip end of the mouth or the resin solution is at a predetermined concentration, and it is necessary to perform a blanking outside the defect portion. However, the film is vacant on the periphery of the correction portion (4), and the time difference between the short and the short correction is obtained. Observing; the position of the hitter can correct the positional deviation generated when the nozzle is ejected to the ground. Thus, by using the defect correction method of the embodiment, the defect correction can be performed. After the solution 丨7a or after drying the resin solution, the resin may be scraped into the opening portion by a squeegee or the like, or the excess resin may be removed by a doctor blade. Therefore, even when the amount of discharge is too large, the resin solution 17& which adheres to the defective portion of the substrate 6 can be controlled by the ratio of the dissolution in the resin solution (the reduction ratio after drying) to the film thickness of the film or the like. The amount of adhesion, that is, the film thickness of the final correction layer 17b can be controlled, and can be correctly 315540 32 1262306::: 卞 Therefore, the color and transmittance of the defect correction section of the town control. The attachment point may be shifted from the opening of the film toward the position of the female opening of the blade. In this case, the resin may be scraped into the opening by a knife or the like, and the resin solution na may be uniformly attached. In the defective part of the substrate 6. The material of the α / Ί刀 is made of a resin material (4) or a Teflon name, and the material of the film is a material having a higher wettability than the blade of the polyamic acid. The composition allows the scraped resin to remain in the thin, = hunting, so that the resin does not remain on the scraper, so there is no need to carry out the scraper or to extend the cleaning cycle. χ ‘Because the excess resin is attached, it is left in the state of the adhesive film 5a, and is rolled together with the thin film of the material. Therefore, it does not adhere to the portion other than the defective portion of the substrate 6, and does not form a new defect. Since the Dolan resin can be recovered by exchanging the used film 5a, the resin is not attached to the resin and can be easily repaired. Further, when the resin solution 17 is ejected from the nozzle 16 to the substrate, the resin solution 17a is formed into a spherical shape due to the surface tension, and the resin solution m is not in contact with the substrate 6. At this time, it is preferable to make the periphery of the opening of the film ^ thin. The above steps are explained in Fig. 11. As shown in Fig. 4 (4), the peripheral portion of the opening of the film 5a is thinned by the laser removing method. With the future from short pulse laser light source! The short-pulse laser light is irradiated around the opening of the film 5&, and the portion shown in Fig. 4 is formed by removing the portion. At this time, a short pulse laser source! The wheeling system is set to be lower than when the opening is formed through the film formation. Then, the position of the moving laser spot is caused to cause the short-pulse laser light source 1 to illuminate the entire circumference of the opening. By making the periphery of the opening of the film 5a 315540 1262306::: When the thickness is thick, the substrate 6 can be brought into contact with the resin solution. Therefore, the u-th image is formed (the thick film of the i7a film 5a is set and the "inch" is attached to the step difference in the thin liquid Ha. Therefore, a step difference is formed, and the resin dissolves & +, r η and then the image of the brother 11 C) The light of the light source 9 is irradiated, and the #, (^, and the work is dried. The subsequent steps are omitted because the steps are the same. The younger ones are not worth the money, Α π six Even if the resin solution 17a attached to the attached day can be easily attached to it, the Geer, as shown in the figure 12, you can add the resin solution η to the resin solution: In this case, the opening portion is formed in a thin film by the transport removal method as shown in Fig. 4 (4). As shown in Fig. 12), Μ 'generates fine particles' is dropped from above the opening portion to the substrate 6. Therefore, Even if the film 5a is thick, the resin solution% may be (4) in the defective portion of the substrate 6. Then, as shown in the 12th, the light source 9 is irradiated and dried, and the subsequent steps are as shown in Fig. 1 Since the steps are the same, the description thereof is omitted. Therefore, even if the amount of the resin solution Pa required for adhesion is large, it is easy to be used. Further, in the above-mentioned yoke example, the resin solution colored in red is attached to the substrate 6, but it may be colored in blue, green or black, and can be monitored. The coloring layer, the green coloring layer, and the green coloring layer are not limited to the color filter substrate, and a resin solution colored in a color corresponding to the pattern to be corrected may be adhered to the substrate. When the resin solution is dried, the water in the solution evaporates, and the resin is fixed to the defective portion. Of course, a solution other than the resin solution may be passed through the opening of the film 5a so as to correspond to the pattern to be corrected, 315540 34 1262306 The positive liquid may be attached to the substrate 6. Alternatively, the correction liquid may be dropped from the upper surface by the nozzle, and the correction liquid colored in accordance with the pattern to be corrected may be attached to the substrate 6, thereby correcting the pattern of any color. Moreover, by adjusting the point of the short-pulse laser light to adjust the size of the opening portion, it is possible to adhere to the resin solution having the same size as the detected white defect, and the white defect can be corrected with high precision. Therefore, even in the case of correcting the color filter substrate or the like, the display quality is not deteriorated. Embodiment 5 The defect method of the pattern substrate of the present embodiment will be described with reference to Fig. 13. Fig. 13 shows the steps of correcting the defect. An enlarged cross-sectional view of the defective portion of the present embodiment is the same as that of the embodiment. In the same manner as in the first embodiment, the foreign matter or the defect on the color filter substrate is detected, and the short pulse light is transmitted through the thin film. Foreign matter or defective portion. Therefore, it is possible to remove a part of the thinned portion and the foreign matter by the laser beam splitting method. Therefore, in the configuration shown in Fig. 13(a), an opening portion is provided in the film 5a. In this embodiment, As in the above embodiment, a nozzle 16 that can move the liquid distributor in the horizontal direction is provided. In this state, the nozzle 16 is moved to the opening. Therefore, the configuration shown in Fig. 13(a) is formed. A resin solution 17 colored in a color corresponding to the pattern to be corrected is also attached to the tip end of the nozzle 16 of the dispenser. The resin solution 17 is extruded from the front end of the nozzle 16. In the present embodiment, the nozzle μ is provided so as to be movable in the up and down direction. The nozzle 16 is moved downward so as to be close to the substrate 6, and the resin solution 17 is brought into contact with the film & and the substrate 6. Further, it is also possible to move the stage of the substrate 6 upward, and the base is close to the mouthpiece 16. Therefore, as shown in Fig. 8 (8), the resin solution is caused to flow through the opening portion of the defect portion of the substrate 6. Further, when the nozzle 16 is moved upward or the table is moved downward to separate the base, the resin liquid 17a attached to the front end of the nozzle 16 is large = back = 16 side. Therefore, the configuration shown in Fig. 13 (4) is formed, and the resin solution 17a adheres to the defective portion in the same manner as in the fourth embodiment. In the present embodiment, even when a large nozzle is dropped, the amount of adhesion of the resin solution (7) to the substrate 6 can be restricted. Therefore, a small amount of the resin solution can be attached to the substrate 6, and the thickness of the adhered resin layer can be easily controlled. Thereafter, in the same manner as in the fourth embodiment, the short-pulse laser light source i was used to remove the resin solution around the opening, and the lamp source 9 was used to dry the resin solution. Then, the ruthenium film 5a is rotated and peeled off from the substrate 6, and the ruthenium 7 is moved to remove the film "from the substrate 6. Therefore, as shown in Fig. 13 (4), the colored resin is attached to the defective portion, and the correction layer 17b is modified. The defect of the color layer. The white defect of the pattern substrate can be correctly corrected by the above device configuration and defect correction method. Further, by adding the steps of correcting the defects to the process of the pattern substrate, defect-free can be manufactured. [Embodiment 6] The defect correction device of the present embodiment will be described with reference to Fig. 15. The first $ is a diagram showing the configuration of the defect inspection device of the color filter substrate of the present invention. The description of the embodiment is omitted, and the description thereof is omitted. In the present embodiment, the foreign matter on the film is removed by the laser removal method in the same manner as in the above embodiment, and then the heating block is provided from the formed opening portion. The coloring layer of the different film is subjected to thermal transfer. 315540 36 1262306 In the present embodiment, in addition to the defect inspection device shown in Fig. 1, it is provided as shown in Fig. 15 to have a coloration on the film 5. The film 18 of the transfer layer and the heating block 2 for thermal transfer. The film 18 is attached to the film reel 19, and is thinned by rotating the film reel 19. The film 18 and the heating block 2G slide. For example, the object lens 4, the air ejecting mechanism 13, and the film reel 19 f heating block 2 can be connected to a sliding body (not shown) to make it slippery. When the foreign matter is removed, the objective lens 4 and the air ejection mechanism 13 can be disposed at the defect position, and when the transfer layer is transferred, the slider is moved to arrange the film at the defect position by the heating block 20. It can also be moved by the sliding body=moving mechanism. Alternatively, the film can be placed under the heating block to the air ejecting mechanism 13 without moving the objective lens 4 and the empty::out mechanism 13 Μ When the film 18 is moved to the defect position, a top view of the configuration of the 1"two substrate 6 and the film shown in Fig. 16 is formed. The film is set to be two, and the film 18 is disposed on the film 5. White: the opening 15 of the binding film 5 of the crucible 5 makes the film 18 and the substrate 6 = direction A film is provided at the position of the opening portion 15 as a transfer layer. The defect portion passes through the opening portion 15 to transfer the transfer layer of the film 18 to the substrate at a position of two. It is preferable to pre-fix j =: film: when the film 18 is moved, the positions of the substrate 6 and (10) 5 are fixed. The fixed substrate 6 and 3] 5540 37 1262306 film 5 > ancient, i., / there: in the air ejection A method of placing a rubber or the like on the film 5, and a method of charging the film 5 to the substrate 6 by electrostatic force. The method of placing the stone rubber is to mount the stone rubber on both sides of the opening. The position of the film 5 is fixed. Further, the film 5 is fixed by electrostatic force = when the film roll 19 is rotated to feed the film 5, the friction is 6 gold. (1) The electrostatic force of the charged film 5 is fixed to fix the position of the substrate 13" to = 5. In the present embodiment, the substrate 6 and the film 5 are fixed by the above method without using the air ejecting mechanism, and the opening portion 15 A m $ + You have to connect the stone and the stone is thin. In addition, you can also spray air on the sides of the opening 15 and the 5 ^ 18 will not overlap, so that the fixed substrate 6 and the film film 18 have thermal transfer. Thinness of the transfer layer to be transferred = For example, Toraya (registered trademark) manufactured by Fujifilm Co., Ltd. can be used. The adhesion of the transfer layer can be improved by the = film. The structure of the film can be described in Fig. 17. "The film 18 has a buffer layer i8d formed on the base layer 18e. An oxygen shielding layer 18c' is provided on the buffer layer 18d, and a transfer layer 18b colored by the pigment is provided on the oxygen shielding layer 18c. The transfer layer 18b is formed of, for example, a photosensitive resin. The pigment of the transfer layer 18b is colored according to the color of the color ray to be corrected. The transfer layer 18b is transferred onto the substrate 6 to correct the white defect. A cover film 18a for surface protection is crimped onto the transfer layer 18b. X, in order to prevent the dust from being attached by the peeling, an electron-conducting electrification preventing layer is provided on the back surface of the base layer 18e. 315540 38 1262306 The base layer 18e is formed, for example, of PET having a thickness of about / / m. As the buffer layer 18d, a thermoplastic resin having a thickness of about 2 μm which is soluble in a weak base can be used. The adhesion of the transfer layer is improved by the buffer layer 丨 8d absorbing the step of the defective portion of the substrate. The thickness of the oxygen shielding layer is 16 "yang, the thickness of the transfer layer 18b is 2 Å / / m, and the thickness of the cover film is [" η. The configuration of the film 18 is a typical example and is not limited to the above configuration. For example, the cover film 18a, the oxygen shielding layer 18c or the static electricity prevention layer (8) may not be provided. In particular, since the phenomenon of dust adhering to the portion of the film 18 disposed in the opening portion 15 is extremely small, the cover film (8) may not be provided. Further, the transfer layer 18b is not limited to the photosensitive resin layer, and may be a coloring layer corresponding to the pattern to be transferred. The heating block 20 is arranged to be movable up and down, so that when the film is attached to the two printed layers 18b, the film 18 is moved downward and pressed against the substrate. The image of the substrate 6 and the film 18 is shown in Fig. 18. Fig. 18 is a cross-sectional view showing the configuration of the substrate 6 lacking the correction portion. Here, the illustration of the cover film 18a, the oxygen shielding layer 18, the underlying layer, and the charging prevention of 2 18 is omitted. The film 18 is pressed by the heating block 2 In the temple, the structure shown in the first (a) is formed. u By pressing the heating block 20, a thin, insulting film having the opening portion 5 is formed between the substrate 6 and the thin layer 18 having the transfer layer. Therefore, the transfer 8 8 is pressed through the opening 15 of the film 5 to the defect portion L of the substrate 6 and the opening portion 15 is provided to be the same size and the same as the portion for removing the foreign matter by the barrage removal method. The position "the portion to be corrected" is obtained. By transferring the transfer layer 18b through the film 5, the transfer layer 18b 315540 39 1262306 can be attached to the substrate 6 in the interlayer. Further, in the region other than the opening portion, The transfer layer 1 will adhere to the top of the film 5. Thus, by opening the film 5 The transfer layer 18b, which is a colored layer, can prevent the transfer layer 18b from adhering to a region other than the defect portion. Therefore, the transfer layer I 8b can be transferred only to the defect portion with a simple configuration, and can be corrected. The defect is corrected. Since the transfer layer 18b does not adhere to the excess portion, it is not necessary to remove the transfer layer 18b of the excess portion in the subsequent step, and the productivity can be improved.

且在本實施例中,係透過熱可塑性樹脂層18d壓下; 印層18b。熱可塑性樹脂層18d具有弾性,在將薄膜18; 壓在基板6時,具有緩衝層之功能。因此,可吸收因著g 層62、BM64及著色層薄膜5而產生之基板上的段差,古 可^確地轉印熱可塑性樹脂層18d。因熱可塑性樹脂層^ =厚度為,m’故即使著色層之厚度為2鋒,觀之/ =膜5之厚度為8"m,也可吸收因此而產当 &奴差而正確地進行轉印。And in this embodiment, it is pressed through the thermoplastic resin layer 18d; the printed layer 18b. The thermoplastic resin layer 18d has an inert property, and has a function as a buffer layer when the film 18 is pressed against the substrate 6. Therefore, the step on the substrate due to the g layer 62, the BM 64, and the coloring film 5 can be absorbed, and the thermoplastic resin layer 18d can be accurately transferred. Since the thickness of the thermoplastic resin layer = m', even if the thickness of the colored layer is 2 front, the thickness of the film / / film 5 is 8 " m, which can be absorbed and thus correctly produced as & Transfer.

,加熱塊2 0上提並離開基板6後,移動薄膜! 8削 Λ 從基板6剝離時,形成第18圖(b)所示之槿杰, 此’可藉由乾式製程進行缺陷 /冓,? W或熱可塑性樹脂層18d附著在A二日;…細 水溶|付者在基板6侧時,利用弱驗 ^合液進仃贺淋噴霧處理,以去除 性樹脂厣18d。$ 41 PR 虱k敝層18或e熱可言 性m Γ 帶剝取氧遮蔽層18c或埶可塑 ,^ 糟由布.贡4执取等方式予以去 ,如第18圖(b)所示,可將作為 ’、 為者色層之轉印層18b轉 315540 40 1262306 印在白缺陷位置,以進行缺陷修正。 =使用薄膜18’可容易地控制作為著色層而轉印之 層的厚度、顏色、透過轉。也就是H以所教之特性 =薄膜18之轉印層18b,可將所修正之著色層修正成與 正吊之者色層大致相同的狀態。因此可進行正確的缺陷修 又’稭由使用薄膜18進行轉印,可提升轉印層之密接 性0 在上述熱轉印步驟中,為提高轉印速度,也可對基板 6預備加熱。例如可藉由將基板6載置在加熱板上而進行 預備加熱’亦可藉由照射紅外線而進行預備加熱,利用紅 外線% ’可使來自燈光源9之紅外線光通過濾光器10,也 可另外設置加熱用光源。 再者,在本實施例中,為提升轉印層之密接性,可使 用具有與缺陷圖案對應之凸部的加熱塊。以第19圖說明加 熱塊20之構成。第19圖顯示加熱塊之構成的剖視圖。在 加熱塊20之中央設有凸部2〇c。藉由使加熱塊2〇朝箭頭 方向下推’將薄膜18推壓至基板,而可轉印著色層。 因加熱塊20之熱容量大,故形成為0 5mm之圓柱形 狀,轉印時會加熱至約13〇。〇。在加熱塊2〇之底面設有凸 邰2〇C。凸部2〇c例如為0 500 // m且高為Ιθ/zm之圓柱形 狀。在本實施例中,為形成如此微小之凸部,係利用熱膨 服係數不同之材質形成加熱塊20之中心部20b及外周部 20a 〇 例如’將中心部20b作成為熱膨脹係數大之鐵等金 41 315540 1262306 屬5並利用熱膨脹係數小之SiC等陶瓷形成外周部2〇a。 在常溫時該中心部2 0 b與外周部2 0 a會形成為平妇狀。而 且,將加熱塊20加熱到130°C時,因熱膨脹係數之不同中 心部20b會突出,而形成凸部20c。為使凸部成為所希望 之形狀、大小、高度,而設計中心部20b之大小及熱膨服 係數。藉此,即使是微小的凸部,也能以所希望之大小正 確地形成凸部。 由於該凸部20c係對應基板之缺陷部分而嵌合,因此 在具有段差之情況下也可以提升密接性。又,因將凸部之 南度設為一定,故常溫時加熱塊2〇之底面也可為研磨為平 滑狀。當然,凸部20c之大小、高度係使用依照修正缺陷 之圖案、薄膜之厚度等之大小者。 實施例7After the heating block 20 is lifted up and left from the substrate 6, the film is moved! 8 is peeled off. When peeling off from the substrate 6, the image shown in Fig. 18(b) is formed, which can be defective/defected by a dry process. ? The W or the thermoplastic resin layer 18d is adhered to the second day of the A; the water is dissolved on the substrate 6 side, and the weak test solution is used to carry out the spray treatment to remove the resin 厣 18d. $ 41 PR 虱k敝 layer 18 or e heat-producible m Γ stripped oxygen masking layer 18c or 埶 plastic, ^ 由 布 布 tribute tribute 4, etc., as shown in Figure 18 (b), The transfer layer 18b, which is the 'color layer', can be printed at the white defect position for defect correction. = The thickness, color, and transmission of the layer transferred as the colored layer can be easily controlled using the film 18'. That is, H is the characteristic of the teaching = the transfer layer 18b of the film 18, and the corrected color layer can be corrected to be substantially the same as the color layer of the positive hanging. Therefore, the correct defect can be repaired. The straw is transferred by using the film 18, and the adhesion of the transfer layer can be improved. 0 In the above thermal transfer step, the substrate 6 can be preheated in order to increase the transfer speed. For example, preliminary heating can be performed by placing the substrate 6 on a hot plate, and preliminary heating can be performed by irradiating infrared rays, and infrared light from the lamp light source 9 can be passed through the filter 10 by using infrared rays %. In addition, a heating source is provided. Further, in the present embodiment, in order to improve the adhesion of the transfer layer, a heating block having a convex portion corresponding to the defect pattern can be used. The constitution of the heating block 20 will be described with reference to Fig. 19. Fig. 19 is a cross-sectional view showing the constitution of the heating block. A convex portion 2〇c is provided in the center of the heating block 20. The colored layer can be transferred by pushing the film 18 to the substrate by pushing the heating block 2 下 in the direction of the arrow. Since the heat capacity of the heating block 20 is large, it is formed into a cylindrical shape of 0 5 mm, and is heated to about 13 Torr during transfer. Hey. A convex ridge 2〇C is provided on the bottom surface of the heating block 2〇. The convex portion 2〇c is, for example, a cylindrical shape of 0 500 // m and a height of Ι θ / zm. In the present embodiment, in order to form such a small convex portion, the central portion 20b and the outer peripheral portion 20a of the heating block 20 are formed by using materials having different thermal expansion coefficients. For example, the central portion 20b is made of iron having a large thermal expansion coefficient. Gold 41 315540 1262306 is a 5 and forms a peripheral portion 2〇a using a ceramic such as SiC having a small thermal expansion coefficient. At the normal temperature, the central portion 20b and the outer peripheral portion 20a are formed into a flat shape. Further, when the heating block 20 is heated to 130 °C, the central portion 20b is protruded due to the difference in thermal expansion coefficient, and the convex portion 20c is formed. In order to make the convex portion into a desired shape, size, and height, the size of the central portion 20b and the thermal expansion coefficient are designed. Thereby, even if it is a minute convex part, a convex part can be formed correctly by a desired magnitude. Since the convex portion 20c is fitted to the defective portion of the substrate, the adhesion can be improved even when there is a step. Further, since the southness of the convex portion is made constant, the bottom surface of the heating block 2 can be polished to a smooth shape at normal temperature. Of course, the size and height of the convex portion 20c are those which are in accordance with the pattern of the correction defect, the thickness of the film, and the like. Example 7

α從傅取的上視圖。 在本實施例中,利用雷The upper view of α taken from Fu. In this embodiment, the use of mine

珉在利用雷射去除方式所 =用雷射去除方式去除基板上之異物 空氣去除部21。空氣去除部21係形 形成之開口部1 5的周邊。去除異 315540 42 1262306 it之猎半反射鏡3之傾斜,將雷射光照射在開口 :玄低的,Γ。此時,藉由以比去除異物時之雷射光之功 而將薄膜5之—部分去除,使薄膜 厚也就Μ 2〇圖中斜線所示之空氣去除部21會比 昭射4:他部分薄。藉由對開口部15之4個角隅同樣地 …、射田射先,而形成第20圖所示之構成。 在此,空氣去除部21之大小比開口部15小。例如, I將開口部之大小設定為一邊!叫正方形,將空氣 3部21之大小設定為一邊·爪之正方形。且開口部 '空氣去除部21之-部分係以重疊方式形成。因以低 工率照射雷射光,故即使是與開口部15重疊之部位,基板 2圖案也不會被去除。因此,可在不會對彩色濾光片之 先子特性造成影響之情況下,形成^氣去除部21。藉由形 士空氣去除部2卜在矩形之開口部15的周邊部,形成薄 版之f度變薄的部分。開口部15因去除薄臈5,故藉由形 成空氣去除部21,可使薄膜從開口部起階段地變厚。 第21外圖顯示形成該空氣去除部21之薄膜5與基板6 之構成。第21圖係薄膜5與基板6之構成的剖視圖,並顯 示利f加熱塊20將薄膜5按壓在基板6之狀態。形成空氣 去除部21後,使加熱塊2〇移動至開口部15上,並壓下加 熱塊20。通常在按壓薄膜18時,薄膜18會從開口部15 之中心開始與基板6接觸。因此,存在於基板6與轉印層 1 8b之間的空氣會從開口部i 5之中心緩慢地排出至外側。 在開口 °卩周邊设有空氣去除部21 ,因此薄膜5係如第21 315540 43 !2623〇6 圖所示形成2段。在未設置空氣去除部2ι之情 部之邊緣與轉印層18b會相接觸,而没有空氣排出之:口 所,會有空氣殘存之虞,但在設置空氣去除部2 : 口部Η與轉印層18b之間的空氣會從上述形成2段之= 排出。因此可提升密接性。 F刀 a在第20圖中係在開口部】5之4個角隅設置空 :21 ’但也可以如第22圖所示在矩形之開口部Η之二 王肢设置空氣去除部21。也就是可形成比開口部丨5 ° 矩形的空氣去除部21。或者也可如第23圖所示形成從 =15之各邊延伸之矩形的空氣去除部21。因此形成^ _開口部15之4個角隅之—邊的空氣去除部21。當铁, 二乳去除部〖之構成並不限定在圖示之構成。空氣去除部 ,形狀可藉由變更光束成形機構2之開縫寬度等而任音 變更光束成形機構2之開縫寬度而形成開口部/ 2氣去除部21時,最好將開口部15與空氣去除部21 又定為矩形。當然,開口部j 5與空氣去除部2!並不 在矩形。 空氣去除部2 1可藉由控制雷射光源丨之 任意厚^而且不僅可去除薄膜5之—部分並^之變^ 也可以完全去除薄膜5。此時,因貫通薄膜5,故最好使空 氣去除邛2 1之覓度變窄,俾轉印層不會透過空氣去除部 21 >而轉印。上述空氣去除部21不限定在使用加熱塊20之 ,卩曰修正裝置,例如也可以採用使用實施例$所示之分配 為的缺陷檢査裝置。也就是藉由雷射去除方式設置開口部 315540 44 1262306 =後,形成空氣去除部21,並利用分配器從其上方滴下經 著色之樹脂溶液。樹脂溶液會從開口部之中心開始與基板 接觸,因此藉由存在於樹脂溶液與基板間之空氣,可減低 ,存在樹麟液與基㈣之空氣。因此可提升修正部位之 ,接性。X,即使是空氣以外之氣體,本實施例所示之空 氣去除部也可以去除,因此空氣去除部21包含可去除空氣 以外之氣體者。 工” 复jfe例8 以弟24圖說明本實施例之缺陷修正裝置 - 、旧丨丨乡正衣直。囚構成與上 义只施例中,兒明過之構成内容相同故省略其說明。本實施 :i中係與實施例6同樣地在薄膜5上重疊具有用以轉印之 #色層的薄膜18。而且’從薄膜18上照射來自雷射光源】 之雷射光,而轉印著色層。 與實施例6同樣地,利用雷射去除方式在薄膜$設置 在:去除缺陷。然後’使薄膜捲軸19移動而將薄膜 8配置在開口部上。間,士农+ &/ 口此形成與弟16圖同樣之構成。在 例中,因不使用加熱塊,故無須使對 氣賀出機構13移動。作是, 兄利用 Using the laser removal method = The foreign matter removal unit 21 on the substrate is removed by laser removal. The air removing portion 21 is formed around the opening portion 15 of the shape. Remove the inclination of the hunting half mirror 3 of the different 315540 42 1262306 it, and irradiate the laser light at the opening: the mysterious low, Γ. At this time, by partially removing the film 5 by the work of the laser light when the foreign matter is removed, the film thickness is also Μ 2 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气thin. The configuration shown in Fig. 20 is formed by the same angle of the four corners of the opening 15 and the injection of the field. Here, the size of the air removing portion 21 is smaller than that of the opening portion 15. For example, I sets the size of the opening to one side, called a square, and sets the size of the air 3 portion 21 to a square of one side and a claw. Further, the portion of the opening portion 'air removing portion 21 is formed in an overlapping manner. Since the laser light is irradiated at a low rate, the pattern of the substrate 2 is not removed even at a portion overlapping the opening 15. Therefore, the gas removing portion 21 can be formed without affecting the characteristics of the color filter. The portion of the thin plate which is thinned by the degree is formed by the shape air removing portion 2 at the peripheral portion of the rectangular opening portion 15. Since the opening portion 15 removes the thin crucible 5, the air removing portion 21 is formed, whereby the film can be thickened from the opening portion. The external drawing of Fig. 21 shows the configuration of the film 5 and the substrate 6 which form the air removing portion 21. Fig. 21 is a cross-sectional view showing the configuration of the film 5 and the substrate 6, and shows a state in which the film 5 is pressed against the substrate 6 by the heating block 20. After the air removing portion 21 is formed, the heating block 2 is moved to the opening portion 15, and the heating block 20 is pressed. Generally, when the film 18 is pressed, the film 18 comes into contact with the substrate 6 from the center of the opening 15. Therefore, the air existing between the substrate 6 and the transfer layer 18b is slowly discharged to the outside from the center of the opening portion i5. The air removing portion 21 is provided around the opening 卩, so that the film 5 is formed in two stages as shown in Fig. 21 315540 43 !2623 〇6. The edge of the portion where the air removing portion 2 is not provided is in contact with the transfer layer 18b, and there is no air discharged: the air may remain in the mouth, but the air removing portion 2 is provided: the mouth is turned and turned The air between the printed layers 18b is discharged from the above-mentioned two segments. Therefore, the adhesion can be improved. In the Fig. 20, the four corners of the opening portion 5 are provided with an empty space: 21'. However, as shown in Fig. 22, the air removing portion 21 may be provided in the second opening of the rectangular portion. That is, the air removing portion 21 having a rectangular shape smaller than the opening portion ° 5 ° can be formed. Alternatively, as shown in Fig. 23, a rectangular air removing portion 21 extending from each side of =15 may be formed. Therefore, the air removing portion 21 of the four corners of the opening portion 15 is formed. The configuration of the iron and the second milk removal unit is not limited to the configuration shown in the drawings. When the air removal portion has a shape in which the slit width of the beam shaping mechanism 2 is changed, and the slit width of the beam shaping mechanism 2 is changed to form the opening/two gas removing portion 21, it is preferable to open the opening portion 15 with the air. The removal portion 21 is also defined as a rectangle. Of course, the opening portion j 5 and the air removing portion 2! are not rectangular. The air removing portion 2 1 can completely remove the film 5 by controlling any thickness of the laser light source and not only removing the portion of the film 5 but also changing it. At this time, since the film 5 is penetrated, it is preferable to narrow the air 邛 2 1 and the ruthenium transfer layer is not transmitted through the air removing portion 21 > The air removing portion 21 is not limited to the heat detecting block 20, and the flaw correcting device may be, for example, a defect detecting device as shown in the embodiment $. That is, after the opening portion 315540 44 1262306 = is set by the laser removing method, the air removing portion 21 is formed, and the colored resin solution is dripped from above by the dispenser. Since the resin solution comes into contact with the substrate from the center of the opening portion, the air existing between the resin solution and the substrate can be reduced, and the air of the tree lining liquid and the base (4) can be reduced. Therefore, the jointability of the correction portion can be improved. X, even if it is a gas other than air, the air removing portion shown in this embodiment can be removed. Therefore, the air removing portion 21 includes a gas other than the air. In the case of the second embodiment, the defect correction device of the present embodiment - the old 丨丨 正 正 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 囚 。 囚 囚 囚 囚 囚 囚 囚 囚 囚 囚 囚 囚. In the present embodiment, in the same manner as in the sixth embodiment, a film 18 having a color layer for transfer is superposed on the film 5, and laser light from the laser light source is irradiated from the film 18, and transfer coloring is performed. In the same manner as in the sixth embodiment, the film is disposed by the laser removal method to remove the defect. Then, the film reel 19 is moved to arrange the film 8 on the opening portion, and between, Shunong + & The configuration is the same as that of the younger figure 16. In the example, since the heating block is not used, it is not necessary to move the air lift-out mechanism 13.

Pm 秒動仁疋因在具有開口部之薄膜5上配 18,故在空氣之噴出被遮蔽且開口部之位置偏移 =固定薄膜5。為固定薄膜5可使用與上述置實: 、將薄膜1 8配置在薄膜5上時,形成第2 構成。本實施例中所使用之薄膜1 8係具備Α “ 丁 且依序設置有膨脹層23 '声二土 &溥艇22 ’ 曰)刀離層24及轉印層25。而且, 315540 45 1262306 土邻之缺陷部分與轉印層25相向之方式,透過薄膜5 之開口部配置薄膜18。 之鉍:膜:8之基底薄膜22係由聚乙烯等之雷射光可透過 彿點:膨脹層23係吸收#射光之吸收層,最好由 級1 “質所形成。修正缺陷時,照射脈衝寬度㈣ 么田于光,瞬間加熱膨脹層23日夺,膨脹層23會膨脹、 膨脹層23上設有基底薄膜22,故在基底薄膜22 闲广脰排出之場所’氣化之膨脹層23會流出至基板側。 广分離層24與膨脹層23會從基底薄膜22分離而附著 —基板6。然後’停止雷射之照射時膨脹層23會冷卻而回 復為固體,形成第25(b)所示之構成。藉由透過薄膜5: =部進行轉印,在缺陷部分以外之部位轉印層25會附著在 =版5上’因此在基板上轉印層25等僅會附著在缺陷部 为。因此’不會對缺陷以外之部位造成影響,可正確地修 正缺陷。 ^ 分離層24因分離轉印層25與膨脹層23,故設置在轉 印層h與膨脹層23之間’由例如可在酸或驗等溶液中溶 解之材質所形成。藉由將溶液滴在基板6而溶解附著在基 板之刀雄24,可去除附著在基板側之轉印層上的分 離層24,而可使膨脹層23從轉印層25分離。藉由使用分 離層24將轉印層25與膨脹層23予以分離,可將膨服層 23從基板去除,使在基板6上僅殘存轉印層25。因此,可 正確地僅轉印缺陷修正所需之轉印層25。因此形成第25 圖(c)所示之構成。轉印層25具備與所要修正之缺陷之著 315540 46 1262306 色層對應的顏色、透過率、膜厚等特性,故可正確地修正 缺陷。當然,使轉印層25與膨脹層23分離之方法並不限 定在上述方法。 & 在上述實施例中,係使用雷射光源1轉印轉印層25, 但也可以具備與雷射光源丨不同之光源,照射來自^光源 之光使轉印層25進行轉印。又,為提升密接性,也可以照 射來自燈光源9之紅外線而予備加熱基板6。當然,也可 以組合利用上述實施例。 【圖式簡單說明】 =1圖係本發明實施例丨之缺陷修正裝置之構成圖。 第2圖係顯示本發明實施例1之缺陷修正裝置之薄膜 的構成之上視圖。 / 、 弟3圖(a)至(c)係顯示本發明實施例丨之缺陷修正裝置 之缺陷部分的構成之放大剖視圖。 少、 1之缺陷修正裝置之薄膜 第4圖係顯示本發明實施例 的構成之上視圖。 第5圖(a)、(b)係顯示本發明實施例1之缺陷修正裝置 之缺陷部分的構成之放大剖視圖。 少、 第6圖係顯不本發明實施例2之缺陷 的構成之上簡。 dm =7圖係本發明實施例3之缺陷修正裝置之構成圖。 弟8圖(a)、(b)係顯示本發明實施例3之缺陷修正 之缺=部分的構成之放大剖視圖。 第9圖(a)至(c)係顯示本發明實施例^之缺陷修正裝置 315540 47 1262306 之缺陷部分的構成之放大剖視圖。 第10圖(d)至(f)係顯示本發明實施例4之缺陷修正裝 置之缺陷部分構成之放大剖視圖。 第11圖(a)至(C)係顯示本發明實施例4之缺陷修正裝 置之其他缺陷部分的構成之放大剖視圖。 第12圖(a)至(c)係顯示本發明實施例4之缺陷修正裝 置之其他缺陷部分的構成之放大剖視圖。 第13圖(a)至(d)係顯示本發明實施例5之缺陷修正裝 置之缺陷部分的構成之放大剖視圖。 f 14圖係顯示彩色滤光片基板之構成的剖面放大圖。 f 15圖係本發明實施例6之#陷修正裝置之構成圖。 第16圖係顯不本發明實施例6之缺陷檢査裝置之開口 部與,有轉印層之薄膜之構成的上視圖。 弟17圖係顯示本發明實施例6之具有轉印層之薄膜之 構成的剖視圖。 、 第18圖(a)、(b)係顯示本發明實施例6之缺陷修正 置之㈣部分的構成之放大剖視圖。 / ^ 第19圖係顯示本發明實施例6之缺陷修正裝口南 塊之構成的剖視圖。 … 正裝置之薄膜 正裝置之缺陷 正裝置之薄膜 第2〇圖係顯示本發明實施例7之缺陷修 之開:部與空氣去除部之構成的上視圖。 弟21圖係顯示本發明實施例了之缺陷修 邛分的構成之放大剖視圖。 第22圖係顯示本發明實施例了之缺陷修 315540 48 1262306 之開=部與空氣去除部之其他構成的上視圖。 第23圖係顯示本發明實施例7之缺陷修正裝置之 之開口邛與空氣去除部之其他構成的上視圖。 、 第24圖係本發明實施例8之缺陷修正裝置之構成固 弟25圖(a)至(c)係頭示本發明實施例$之缺陷修正穿 置之缺陷部分的構成之放大剖視圖。 【主要元件符號說明】 1 短脈衝雷射光源 3、11 反射鏡 5、5a、 5b 、 18 、 18a 6 基板 8、8a、 8b Λ 19 薄膜捲軸 9 燈光源 12 CCD照相機 14 薄膜捲轴旋轉機構 15 雷射點 U、17a 樹脂溶液 、 25 轉印層 I8d 緩衝層 I8f 帶電防止層 2〇a 外周部 2〇c 凸部 23 膨脹層 51、61 紅色著色層 2 光束成形機構 4 薄膜 對物透鏡 7 台 10 波長可變濾光器 13 空氣噴出機構 16 喷嘴 17b 修正層 18c 氧遮蔽層 18e 、 22 基底層 20 加熱塊 20b 中心部 21 空氣去除部 24 分離層 52、62 綠色著色層 315540 49 1262306 53、63 藍色著色層 54、64 黑矩陣(BM) 55 透明層 56 矽層 65 異物 66 缺陷部 67 光阻 68 鉻膜 69 修正部Since the Pm is moved to the film 5 having the opening portion 18, the air is ejected and the position of the opening is shifted to the fixed film 5. The fixing film 5 can be used in the above-described manner: When the film 18 is placed on the film 5, the second structure is formed. The film 18 used in the present embodiment is provided with a crucible and is provided with an intumescent layer 23 'sound two soils & an ankle boat 22 '曰) knife release layer 24 and a transfer layer 25. Moreover, 315540 45 1262306 The defect portion of the soil faces the transfer layer 25, and the film 18 is disposed through the opening of the film 5. The film: the base film 22 of the film 8 is made of laser light such as polyethylene, which is transparent to the point of view: the intumescent layer 23 It is the absorption layer of the absorption light, preferably formed by the grade 1 "quality. When the defect is corrected, the irradiation pulse width (4) is in the light of the sky, the heating layer is heated for 23 days, the intumescent layer 23 is expanded, and the base film 22 is provided on the intumescent layer 23, so that the base film 22 is ventilated at a place where it is discharged. The intumescent layer 23 will flow out to the substrate side. The wide separation layer 24 and the intumescent layer 23 are separated from the base film 22 to adhere to the substrate 6. Then, when the irradiation of the laser is stopped, the intumescent layer 23 is cooled and returned to a solid to form the structure shown in Fig. 25(b). By transferring through the film 5: = portion, the transfer layer 25 adheres to the plate 5 at a portion other than the defect portion. Therefore, the transfer layer 25 or the like adheres only to the defect portion on the substrate. Therefore, it does not affect the parts other than the defects, and the defects can be corrected correctly. The separation layer 24 is formed between the transfer layer h and the intumescent layer 23 by separating the transfer layer 25 from the intumescent layer 23, and is formed of a material which can be dissolved, for example, in an acid or test solution. By dissolving the solution on the substrate 6 to dissolve the knife 24 attached to the substrate, the separation layer 24 adhering to the transfer layer on the substrate side can be removed, and the intumescent layer 23 can be separated from the transfer layer 25. By separating the transfer layer 25 from the expanded layer 23 by using the separation layer 24, the expanded layer 23 can be removed from the substrate, leaving only the transfer layer 25 on the substrate 6. Therefore, only the transfer layer 25 required for defect correction can be correctly transferred. Therefore, the configuration shown in Fig. 25(c) is formed. The transfer layer 25 has characteristics such as color, transmittance, and film thickness corresponding to the 315540 46 1262306 color layer of the defect to be corrected, so that the defect can be accurately corrected. Of course, the method of separating the transfer layer 25 from the intumescent layer 23 is not limited to the above method. & In the above embodiment, the transfer layer 25 is transferred using the laser light source 1, but a light source different from the laser light source may be provided, and the light from the light source may be irradiated to transfer the transfer layer 25. Further, in order to improve the adhesion, the infrared ray from the lamp light source 9 may be irradiated to prepare the heating substrate 6. Of course, the above embodiments can also be utilized in combination. BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1] FIG. 1 is a configuration diagram of a defect correction device according to an embodiment of the present invention. Fig. 2 is a top plan view showing the configuration of a film of the defect correcting device of the first embodiment of the present invention. / (3) (a) to (c) are enlarged cross-sectional views showing the configuration of a defective portion of the defect correcting device of the embodiment of the present invention. Thin film of defect correction device of 1 and Fig. 4 is a top view showing the constitution of the embodiment of the present invention. Fig. 5 (a) and (b) are enlarged cross-sectional views showing the configuration of a defective portion of the defect correcting device of the first embodiment of the present invention. Less, Fig. 6 shows a simplified structure of the defect of the second embodiment of the present invention. Dm = 7 is a configuration diagram of the defect correcting device of the third embodiment of the present invention. Fig. 8 (a) and (b) are enlarged cross-sectional views showing the configuration of the defect correction portion of the defect correction according to the third embodiment of the present invention. Fig. 9 (a) to (c) are enlarged cross-sectional views showing the configuration of a defective portion of the defect correcting device 315540 47 1262306 of the embodiment of the present invention. Fig. 10 (d) to (f) are enlarged cross-sectional views showing the configuration of a defective portion of the defect correcting device of the fourth embodiment of the present invention. Fig. 11 (a) to (C) are enlarged cross-sectional views showing the configuration of other defective portions of the defect correcting device of the fourth embodiment of the present invention. Fig. 12 (a) to (c) are enlarged cross-sectional views showing the configuration of other defective portions of the defect correcting device of the fourth embodiment of the present invention. Fig. 13 (a) to (d) are enlarged cross-sectional views showing the configuration of a defective portion of the defect correcting device of the fifth embodiment of the present invention. The f 14 diagram shows an enlarged cross-sectional view showing the configuration of the color filter substrate. Fig. 15 is a configuration diagram of the # trap correction device of the sixth embodiment of the present invention. Fig. 16 is a top view showing the configuration of the opening portion of the defect inspection device of the sixth embodiment of the present invention and the film having the transfer layer. Figure 17 is a cross-sectional view showing the constitution of a film having a transfer layer in Example 6 of the present invention. Fig. 18 (a) and (b) are enlarged cross-sectional views showing the configuration of a part (4) of the defect correction in the sixth embodiment of the present invention. Fig. 19 is a cross-sectional view showing the configuration of the south block of the defect correcting mount of the sixth embodiment of the present invention. The film of the positive device The defect of the positive device The film of the positive device Fig. 2 is a top view showing the configuration of the defect repairing portion and the air removing portion of the seventh embodiment of the present invention. Fig. 21 is an enlarged cross-sectional view showing the configuration of a defect repairing portion of the embodiment of the present invention. Fig. 22 is a top view showing another configuration of the opening portion and the air removing portion of the defect repairing 315540 48 1262306 of the embodiment of the present invention. Fig. 23 is a top view showing another configuration of the opening 邛 and the air removing portion of the defect correcting device of the seventh embodiment of the present invention. Fig. 24 is a perspective view showing the configuration of a defective portion of the defect correcting device of the embodiment of the present invention. Figs. (a) to (c) are enlarged sectional views showing the configuration of a defective portion of the defect correcting opening of the embodiment of the present invention. [Description of main component symbols] 1 Short-pulse laser light source 3, 11 Mirrors 5, 5a, 5b, 18, 18a 6 Substrate 8, 8a, 8b Λ 19 Film reel 9 Light source 12 CCD camera 14 Film reel rotating mechanism 15 Laser spot U, 17a resin solution, 25 transfer layer I8d buffer layer I8f charge prevention layer 2〇a outer peripheral portion 2〇c convex portion 23 intumescent layer 51, 61 red colored layer 2 beam forming mechanism 4 thin film objective lens 7 10 wavelength variable filter 13 air ejection mechanism 16 nozzle 17b correction layer 18c oxygen shielding layer 18e, 22 base layer 20 heating block 20b central portion 21 air removal portion 24 separation layer 52, 62 green colored layer 315540 49 1262306 53, 63 Blue colored layer 54, 64 black matrix (BM) 55 transparent layer 56 矽 layer 65 foreign matter 66 defective portion 67 photoresist 68 chrome film 69 correction portion

Claims (1)

!2623〇6 f二中請專利範圍: 々種缺陷修正裝置,係用以去除經圖案化之基板上之缺 陷的缺陷修正裝置,具備有·· 發出脈衝雷射之脈衝雷射光源;以及 〃、上述基板相向設置之薄膜, 、且藉由將來自上述脈衝雷射光源之脈衝雷射光照 一 上述薄膜,而利用雷射去除方式大略同時去除上述 薄膜之_部分與上述缺陷。 •如申請專利範圍第1項之缺陷修正裝置,其中,藉由照 射上述脈衝雷射光,使上述薄膜變薄,再利用雷射去除 方式大略同時去除上述薄膜之一部分與上述缺陷。 3·如申請專利範圍第1項或第2項之缺陷修正裝置,其 中,更具備使上述薄膜變更為具有可轉印至上述基板之 轉P層之薄膜的薄膜變更機構,並將上述脈衝雷射光照 射在具有上述轉印層之薄膜,而將上述轉印層轉印在上 述基板。 4·如申凊專利範圍第3項之缺陷修正裝置,其中,係將上 述轉印層轉印在已除去上述缺陷的部位。 5 ·如申请專利範圍第1項或第2項之缺陷修正裝置,其 中,更具備使依上述基板上要修正之圖案的修正液附著 在基板的喷嘴,並使上述修正液從已去除上述薄膜的部 刀附者在基板而修正缺陷。 6·如申請專利範圍第1項或第2項之缺陷修正裝置,其 中,更具備具有可移動至已去除上述薄膜的部位之位置 315540 51 l2623〇6 7. 之^印層的薄膜,並將上述轉印層從已去除“ 部分轉印在上述基板而進行缺陷修正。、的 -種缺陷修正裝置,係將圖案轉印在經圖案化之 缺陷部分而修正缺陷之缺陷修正裝置,具備有:土、 在與上述基板相向之面具有可轉印至該基板之 印層,且接近上述基板的薄膜;以及 發出照射在具有上述轉印層之薄膜的脈衝雷射 之脈衝雷射光源, 且將來自上述脈衝雷射光源之脈衝雷射光照射在 具有上述轉印層的薄膜,而將轉印層轉印在上述基板之 缺陷部分。 8·如申請專利範圍第7項之缺陷修正裝置,其中,上述基 板為具有遮光膜及形成在上述遮光膜上的光阻圖案之 光罩用基板,而修正上述光阻圖案之缺陷。 9· 一種缺陷修正裝置,係將經圖案化之基板的缺陷予以修 正之缺陷修正裝置,具備有: 與上述基板相向設置之薄膜; 發出照射在上述薄膜以在上述薄膜設置開口部之 脈衝雷射光的脈衝雷射光源;以及 可移動至上述開口部之位置,且使依上述基板上要 修正之圖案的修正液附著在基板的喷嘴, 且將上述修正液從已去除上述薄膜的部分附著在 基板而修正缺陷。 10·—種缺陷修正裝置,係將經圖案化之基板的缺陷予以修 52 315540 1262306 正之缺陷修正裝置,具備有: 與上述基板相向設置之薄膜; 發出照射在上述薄膜以在上述薄膜設置開口部之 脈衝雷射光的脈衝雷射光源;以及 具有可移動至與上述開口部對應之位置之轉印層 的薄膜, 且迻過上述開口部將上述轉印層轉印在上述基板 而修正缺陷。 11·如申請專利範圍第1〇項之缺陷修正裝置,其中,更具 蓄可矛夕動至與上述開口部對應之位置之力口熱A,並藉由 上述加熱塊將具有上述轉印層之薄膜壓著至上述基板 而將轉印層予以轉印。 12·如申請專利範圍第u項之缺陷修正裝置,其中,上述 加熱塊更具備對應於上述開口部之凸部,並藉由上述凸 部壓著具有上述轉印層之薄膜與上述基板。 13·=申請專利範圍第9項至第12項中任—項之缺陷修正 裊置,其中,具備用以固定設有上述開口部之薄膜的固 定機構。 14=申請專利範圍第7項至第1〇項中任一項之缺陷修正 裝置,其中,具有上述轉印層之薄膜更具備吸收上述脈 衝雷射光之吸收層,並將脈衝雷射光照射在上述吸收 層,而將上述轉印層轉印在上述基板。 15·如申請專利範圍第14項之缺陷修正裝置,其中,上述 吸收層與上述轉印層之間具備:±述轉印層轉印在上^ 315540 53 1262306 基板後使上述吸收層從上述轉印層分離的分離層。 16·如申巧專利範圍第9項之缺陷修正裝置,其中,照射上 述脈衝雷射光,以去除已去除上述薄膜之部分或上述開 口部之周邊部之上述修正液。 申請專利範圍第卜7、9、1G項中任—項之缺陷修正 裝置,其中,更具備有將氣體喷出至上述薄膜或具上述 轉:層之薄膜的喷出機構’以藉由上述喷出機構使上述 薄膜或具上述轉印層之薄膜接近上述基板。 申請專利範圍第項中任—項之缺陷修正 衣置’其中,更具備有用以使來自上述脈衝雷射光源之 脈衝雷射光成形的光束成形機構,且將藉上述光束成形 機構而成形之脈衝雷射光照射在上述薄膜或具上述轉 印層之薄膜。 19. t申請專利範圍第卜7、9、1G項中任—項之缺陷修正 I置’其中’更具備有:在與來自上述脈衝雷射光源之 脈衝雷射光大略相同之軸上將光照射在上述基板之觀 察用光源α及用以檢測照射在上述基板之上述觀察用 光源發出的光之檢測機構。 20. 如申請專利範圍第19項之缺陷修正裝置,其中,具上 述轉印層之薄膜更具有上述觀察用光源的光可透過之 透明層,亦具備用以送出具上述轉印層之薄膜以使照射 上述光之位置從上述透明層變更至上述轉印層的薄膜 捲轴。 21·如申請專利範圍第19項之缺陷修正褒置,其中,更具 315540 54 1262306 2用以選擇來自上述觀察用光源之光的波長的波長可 义濾光為,以藉由從波長可變濾光器射出的光加熱上述 基板或上述轉印層。 22·種缺陷修正方法,係去除經圖案化之基板上的缺陷之 缺陷修正方法,具備有: 檢測出基板上之缺陷的步驟;以及 ^將脈衝雷射光照射在與上述基板相向設置之薄 胰,而利用雷射去除方式大略同時去除上述薄膜之一部 分與缺陷的步驟。 3·如申σ月專利|巳圍第22項之缺陷修正方法,其中,更具 備藉由如、射上述脈衝雷射光使上述薄膜變薄的步驟,且 在上述薄膜之變薄的部分照射脈衝雷射光,而利用雷射 去,方式大略同時去除上述薄膜之—部分與上述缺陷。 =°月專利範圍第22項或第23項之缺陷修正方法,其 ’更具備:將上述薄膜變更為具有可轉印至上述基板 ^印層之薄膜的步驟;以及將脈衝雷射光照射在且有 jll印層之_而將轉印層轉印在上述基板的步驟。 25.:申請專利範圍第22項或第⑴員之缺陷 中,更具備有: 八 修正之圖案的修正液’從已去除上述薄膜之 邛刀附者在上述基板的步驟;以及 攸上述基板去除上述薄膜的步驟。 2=缺陷修正方法,係將圖案轉印在經圖案化之基板上 的缺陷部分而修正缺陷之缺陷修正方法,具傷有: 315540 55 1262306 檢測出基板上之缺陷的步驟; 使與上述基板相向的面具有可轉印至該基板之轉 印層的薄膜接近的步驟;以及 將脈衝雷射光照射在上述薄膜,而將上述轉印層轉 印在上述基板的步驟。 27.—種缺陷修正方法,係將經圖案化之基板的缺陷予以修 正之缺陷修正方法,具備有: 檢測出基板上之缺陷的步驟; 使薄膜與上述基板相向的步驟; 將脈衝雷射光照射在上述薄膜,而設置開口部的步 驟; 透過上述開口部使依要修正之圖案的修正液附著 在上述基板之缺陷部分的步驟;以及 從上述基板去除上述薄膜的步驟。 28·—種缺陷修正方法,係將經圖案化之基板的缺陷予以修 正之缺陷修正方法,具備有: 檢測出基板上之缺陷的步驟; 使薄膜與上述基板相向的步驟; 將脈衝雷射光照射在上述薄膜,而設置開口部的 驟; 在上述開口邛的位置設置具有上述轉印層之薄膜 的步驟;以及 透過上述開口部將上述轉印層轉印在基板的步驟。 29.如申請專利範圍第 固昂27項或弟28項之缺陷修正方法,其 315540 56 1262306 中’更具備:去除上述開Π部之周邊的上述薄膜·而設 置用以去除上述基板與具有上述轉印層之薄膜間之空 氣的空氣去除部的步驟, 且在上述開口部及上述空氣去除部的位置設置具 上述轉印層的薄膜。 3〇·如申請專利範圍第22、26、27、28項中任一項之缺陷 修正方法,其中,係將氣體喷出至上述薄膜或具上述轉 印層之薄膜,而使之與上述基板接近。 31·種圖案基板製造方法,係具備·· 在基板上形成圖案的步驟; 檢測出上述基板上之缺陷的步驟; 將脈衝雷射光照射在與上述基板相向設置之薄 膜,而利用雷射去除方式大略同時去除上述薄膜之一部 分與上述缺陷的步驟。 32. 如申請專利範圍第31項之圖案基板製造方法,其中, 具有:將上述薄膜變更為具有可轉印至上述基板之轉印 層之濤膜的步驟;以及將脈衝雷射光照射在具有上述轉 印層之薄膜而將轉印層轉印在上述基板的步驟。 33. 如申請專利範圍第31項之圖案基板製造方法,其中, 具備:使依要修正之圖案的修正液,從已去除上述薄膜 之部分附著在上述基板的步驟;以及 從上述基板去除上述薄膜的步驟。 34. —種圖案基板製造方法,係將圖案轉印在經圖案化之基 板的缺陷部分而形成圖案之圖案基板製造方法,具備土 315540 57 1262306 有: 在基板上形成圖案的步驟; 檢測出形成有圖案之基板上之缺陷的步驟; 印層 使^4上述基板相向的面具有可轉印至該基板之 的薄膜接近的步驟;以及 T 將脈衝雷射光照射在上述薄膜 印在上述基板之缺陷部分的步驟。 3 5 · 一種圖案基板製造方法, 基板製造方法,具備有·· 而將上述轉印層轉 係製造經圖案化之基板的圖案!2623〇6 f2, the scope of patents: The defect correction device is a defect correction device for removing defects on the patterned substrate, and has a pulsed laser source that emits a pulsed laser; and And a film disposed opposite to the substrate, and irradiating the film with the pulsed laser light from the pulsed laser source, and removing the defect of the film and the defect by using a laser removal method. The defect correction device of claim 1, wherein the film is thinned by irradiating the pulsed laser light, and a portion of the film and the defect are removed by a laser removal method. 3. The defect correction device according to claim 1 or 2, further comprising: a film changing mechanism for changing the film to a film having a P layer which can be transferred to the substrate, and the pulse ray is The light is irradiated onto the film having the transfer layer, and the transfer layer is transferred onto the substrate. 4. The defect correction device of claim 3, wherein the transfer layer is transferred to a portion where the defect is removed. 5. The defect correction device according to claim 1 or 2, further comprising: a nozzle for adhering a correction liquid according to a pattern to be corrected on the substrate to the substrate, and removing the film from the correction liquid The knives attached to the substrate correct the defects. 6. The defect correction device according to claim 1 or 2, further comprising a film having a position of 315540 51 l2623〇6 7. movable to a position where the film has been removed, and The transfer layer is provided with a defect correction device that removes a defect by partially transferring the defect to the substrate, and the defect correction device is configured to transfer the pattern to the patterned defect portion to correct the defect. Soil, a film having a printing layer which is transferable to the substrate and adjacent to the substrate, and a pulsed laser source which emits a pulsed laser irradiated on the film having the transfer layer, and The pulsed laser light from the pulsed laser light source is irradiated onto the film having the transfer layer, and the transfer layer is transferred to the defective portion of the substrate. The substrate is a substrate for a mask having a light-shielding film and a photoresist pattern formed on the light-shielding film, and the defect of the photoresist pattern is corrected. A defect correction device for correcting a defect of a patterned substrate includes: a film disposed opposite to the substrate; and a pulsed laser light source that emits pulsed laser light that is irradiated on the film to provide an opening in the film And a position that can be moved to the opening, and the correction liquid according to the pattern to be corrected on the substrate is attached to the nozzle of the substrate, and the correction liquid is adhered to the substrate from the portion from which the film has been removed, thereby correcting the defect. - A defect correction device for repairing a defect of a patterned substrate; a defect correction device of 52 315540 1262306, comprising: a film disposed opposite to the substrate; emitting an irradiation on the film to provide an opening in the film a pulsed laser light source for pulsed laser light; and a film having a transfer layer movable to a position corresponding to the opening portion, and transferring the transfer layer to the substrate by the opening portion to correct a defect. For example, the defect correction device of the first aspect of the patent application, in which the spear is more The heat transfer to the position corresponding to the opening is performed, and the transfer layer is transferred by pressing the film having the transfer layer onto the substrate by the heating block. In the defect correction device of the above aspect, the heating block further includes a convex portion corresponding to the opening, and the film having the transfer layer and the substrate are pressed by the convex portion. 13·= Patent Application No. 9 The defect correction device of any one of item 12, wherein the fixing mechanism for fixing the film having the opening is provided. 14=Application of any one of items 7 to 1 of the patent scope In the defect correction device, the film having the transfer layer further includes an absorption layer that absorbs the pulsed laser light, and irradiates the pulsed laser light onto the absorption layer to transfer the transfer layer to the substrate. The defect correction device of claim 14, wherein the absorption layer and the transfer layer are provided with: the transfer layer is transferred onto the substrate 315540 53 1262306, and the absorption layer is transferred from the above Separation layer for the separation of the layers. The defect correction device of claim 9, wherein the pulsed laser light is irradiated to remove the correction liquid from which the portion of the film or the peripheral portion of the opening portion has been removed. The defect correction device of any one of the items of the invention, wherein the method further comprises: a discharge mechanism for ejecting a gas to the film or a film having the transfer layer: The mechanism brings the film or the film having the transfer layer close to the substrate. In the scope of claim 1, the defect correction device of the item of the invention is further provided with a beam shaping mechanism for shaping pulsed laser light from the pulsed laser source, and a pulsed beam formed by the beam shaping mechanism The light is irradiated onto the film or the film having the transfer layer. 19. t. In the scope of application for patents, paragraphs 7, 9, and 1G, the defect correction I set 'which' is more: light is irradiated on the same axis as the pulsed laser light from the pulsed laser source. The observation light source α of the substrate and a detecting mechanism for detecting light emitted from the observation light source irradiated on the substrate. 20. The defect correction device of claim 19, wherein the film having the transfer layer further comprises a light transmissive transparent layer of the observation light source, and a film for feeding the transfer layer A film reel that changes the position at which the light is irradiated from the transparent layer to the transfer layer. 21. The defect correction device of claim 19, wherein the 315540 54 1262306 2 wavelength is used to select the wavelength of the light from the observation source to be filterable by the wavelength The light emitted from the filter heats the substrate or the transfer layer. 22. A defect correction method for removing a defect on a patterned substrate, comprising: a step of detecting a defect on the substrate; and: irradiating the pulsed laser light to a thin pancreas disposed opposite to the substrate And the step of removing a part of the above film and the defect by using the laser removal method. 3. The defect correction method of claim 22, wherein the method further comprises the step of thinning the film by irradiating the pulsed laser light, and irradiating the pulse in the thinned portion of the film. The laser light is used, and the laser is used to remove the defects of the above-mentioned film at the same time. = a method for correcting defects in item 22 or 23 of the patent range of the invention, which further includes: changing the film to a film having a film transferable to the substrate; and irradiating the pulsed laser light There is a step of transferring the transfer layer to the above substrate. 25.: In the defect of the 22nd item or the (1) part of the patent application, the correction liquid of the eight-corrected pattern is selected from the step of removing the above-mentioned film from the substrate, and the substrate is removed. The step of the above film. 2 = defect correction method, which is a defect correction method for correcting a defect by transferring a pattern onto a defective portion of a patterned substrate, and having a defect: 315540 55 1262306 a step of detecting a defect on the substrate; The surface has a step of approaching a film transferable to the transfer layer of the substrate; and a step of irradiating the transfer film to the substrate by irradiating pulsed laser light onto the film. 27. A defect correction method for correcting a defect of a patterned substrate, comprising: a step of detecting a defect on the substrate; a step of facing the film with the substrate; and irradiating the pulsed laser light a step of providing an opening in the film; a step of adhering the correction liquid of the pattern to be corrected through the opening to the defective portion of the substrate; and a step of removing the film from the substrate. A defect correction method for correcting a defect of a patterned substrate, comprising: a step of detecting a defect on the substrate; a step of aligning the film with the substrate; and irradiating the pulsed laser light a step of providing an opening in the film; a step of providing a film having the transfer layer at a position of the opening; and a step of transferring the transfer layer to the substrate through the opening. 29. If the patent application scope is 27 or 26, the defect correction method is 315540 56 1262306, which is further provided with: removing the above-mentioned film around the opening portion and being provided for removing the substrate and having the above In the step of transferring the air removing portion of the air between the films of the transfer layer, a film having the transfer layer is provided at a position of the opening portion and the air removing portion. The defect correction method according to any one of claims 22, 26, 27, and 28, wherein the gas is ejected to the film or the film having the transfer layer to be bonded to the substrate Close. 31. A method for producing a pattern substrate, comprising: a step of forming a pattern on a substrate; a step of detecting a defect on the substrate; and irradiating the pulsed laser light on a film disposed opposite to the substrate, and using a laser removal method The step of simultaneously removing one of the above films and the above defects is roughly performed. The method of manufacturing a pattern substrate according to claim 31, further comprising: a step of changing the film to a film having a transfer layer transferable to the substrate; and irradiating the pulsed laser light with the above The step of transferring the transfer layer to the substrate by transferring the film of the layer. The method of manufacturing a pattern substrate according to claim 31, further comprising: a step of: applying a correction liquid according to the pattern to be corrected, a portion from which the film has been removed to the substrate; and removing the film from the substrate A step of. A method for producing a pattern substrate, which is a method for producing a pattern substrate by patterning a defect portion of a patterned substrate, and having a pattern of 315540 57 1262306: forming a pattern on the substrate; detecting formation a step of patterning a defect on the substrate; a printing layer having a step of facing the substrate opposite to the substrate having a film transferable to the substrate; and T exposing the pulsed laser light to the defect of the film printed on the substrate Part of the steps. 3 5 . A method of manufacturing a pattern substrate, comprising: patterning the transfer layer to produce a patterned substrate 在基板上形成圖案之步驟; 檢測出基板上之缺陷的步驟; 使薄膜與上述基板相向的步驟; 將脈衝雷射光照射在上述薄膜, 而設置開口部的步 透過上述開π部使依要修正之圖㈣修正㈣著 在上述基板之缺陷部分的步驟;以及 從上述基板去除上述薄膜的步 3 6 · —種圖案基板製造方法,係製造經 基板製造方法,具備有: 驟。 圖案化之基板的圖案 在基板上形成圖案之步驟; 檢測出基板上之缺陷的步驟; 使/專膜與上述基板相向的步驟 將脈衝雷射光照射在上述薄膜a step of forming a pattern on the substrate; a step of detecting a defect on the substrate; a step of facing the film toward the substrate; irradiating the pulsed laser light onto the film, and the step of providing the opening portion is corrected by the opening π portion (4) Correcting (4) a step of forming a defective portion of the substrate; and a method for manufacturing the pattern substrate by removing the thin film from the substrate, and manufacturing the method for manufacturing a substrate, comprising: a step. a pattern of a patterned substrate; a step of forming a pattern on the substrate; a step of detecting a defect on the substrate; a step of aligning the / film with the substrate; irradiating the pulsed laser light to the film 而設置開口部的步 315540 58 1262306 在上述開口部的位置設置具有轉印層之薄膜的步 驟; 透過上述開口部使上述轉印層轉印在上述基板的 步驟;以及 從上述基板去除上述薄膜的步驟。 37. 如申請專利範圍第35項或第36項之圖案基板製造方 法,其中,更具備:去除上述開口部之周邊的上述薄膜 而設置空氣去除部的步驟, 且在上述開口部及上述空氣去除部的位置設置具 上述轉印層的薄膜。 38. 如申請專利範圍第31、%、%、%項中任—項之圖案 基板製造方法,其巾,將氣體噴出至上述薄膜或具上述 轉印層之薄膜,而使之與上述基板接近。 315540 59a step of providing an opening portion 315540 58 1262306, a step of providing a film having a transfer layer at a position of the opening portion, a step of transferring the transfer layer to the substrate through the opening portion, and removing the film from the substrate step. The method of manufacturing a pattern substrate according to claim 35 or claim 36, further comprising: a step of removing the film around the opening and providing an air removing portion, and removing the opening and the air A film having the above transfer layer is disposed at a position of the portion. 38. The method for manufacturing a pattern substrate according to any one of the claims, wherein the film is sprayed to the film or the film having the transfer layer to be close to the substrate. . 315540 59
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