TWI411880B - Pattern forming material, pattern forming device and pattern forming method - Google Patents

Pattern forming material, pattern forming device and pattern forming method Download PDF

Info

Publication number
TWI411880B
TWI411880B TW95132517A TW95132517A TWI411880B TW I411880 B TWI411880 B TW I411880B TW 95132517 A TW95132517 A TW 95132517A TW 95132517 A TW95132517 A TW 95132517A TW I411880 B TWI411880 B TW I411880B
Authority
TW
Taiwan
Prior art keywords
pattern forming
compound
group
forming material
photosensitive layer
Prior art date
Application number
TW95132517A
Other languages
Chinese (zh)
Other versions
TW200722918A (en
Inventor
Kazumori Minami
Morimasa Sato
Original Assignee
Asahi Kasei E Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Materials Corp filed Critical Asahi Kasei E Materials Corp
Publication of TW200722918A publication Critical patent/TW200722918A/en
Application granted granted Critical
Publication of TWI411880B publication Critical patent/TWI411880B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/006Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polymers provided for in C08G18/00
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001Phase modulating patterns, e.g. refractive index patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention aims at providing a pattern forming material which little suffers from area defects, fog caused by a color developer, and break of unexposed film and exhibits high resolution, high tent film strength, and excellent removability after pattern formation and which can form finer patterns; a pattern forming apparatus provided with the material; and a pattern forming process by use of the material. The invention provides a pattern forming material having a photosensitive layer which comprises a binder, a polymerizable compound, a photopolymerization initiator, a fused heterocyclic compound, a polymerization inhibitor, a color developer and an organic solvent, wherein the binder has an acid value of 50 to 400mgKOH/g and a mass-average molecular weight of 10,000 to 100,000; the polymerizable compound is a compound having a urethane group and/or a compound having an aryl group; and the organic solvent is at least one member selected from among ketones, alcohols and ethers with the content thereof being 0.5% by mass or below.

Description

圖案形成材料、與圖案形成裝置及圖案形成方法Pattern forming material, pattern forming device and pattern forming method

本發明涉及適於乾膜光阻(DFR)等之圖案形成材料,與備有該圖案形成材料之圖案形成裝置及使用上述圖案形成材料之圖案形成方法。The present invention relates to a pattern forming material suitable for dry film photoresist (DFR), a pattern forming apparatus including the pattern forming material, and a pattern forming method using the pattern forming material.

形成電路圖案等永久圖案之際,有於支持體上塗數感光性樹脂組成物,乾燥使之形成感光層的圖案形成材料之使用。上述永久圖案之製法係例如,於形成上述永久圖案之銅面積層板等基體上層積圖案形成材料形成積層體,對於該積層體之上述感光層進行曝光,該曝光後將上述感光層顯像形成圖案,之後施行蝕刻處理等形成上述永久圖案。When a permanent pattern such as a circuit pattern is formed, a photosensitive resin composition is coated on a support, and a pattern forming material which is dried to form a photosensitive layer is used. The permanent pattern is formed by, for example, laminating a pattern forming material on a substrate such as a copper area laminate forming the permanent pattern to form a layered body, exposing the photosensitive layer to the layered body, and developing the photosensitive layer after the exposing The pattern is then subjected to an etching treatment or the like to form the above permanent pattern.

上述圖案形成材料為提升保存安定性、提升解析度之目的,有於上述感光性樹脂組成物添加具酚式羥基、芳環、雜環或亞胺基等之化合物的聚合抑制劑之提議(參考例如專利文獻1~4)。可是此時並無涉及,藉減少有機溶劑餘留量可抑制感度下降的高感度乾膜光阻膜之揭示或暗示。The pattern forming material is a proposal for adding a polymerization inhibitor of a compound having a phenolic hydroxyl group, an aromatic ring, a heterocyclic ring or an imine group to the photosensitive resin composition for the purpose of improving storage stability and improving resolution (refer to For example, Patent Documents 1 to 4). However, there is no disclosure at this time, and the disclosure or suggestion of a high-sensitivity dry film photoresist film capable of suppressing a decrease in sensitivity can be suppressed by reducing the amount of organic solvent remaining.

而於DFR除感度之提升以外,尚有圖案形成後之剝離性等的需求。In addition to the improvement in sensitivity of DFR, there is a demand for peelability after pattern formation.

因此現況係,面狀故障少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,可形成高度精細圖案之圖案形成材料,與備有該圖案形成材料之圖案形成裝置及使用上述圖案形成材料之圖案形成方法尚未見提供,進一步之改良開發受到期待。Therefore, the current situation is that the surface failure is small, the light leakage caused by the color developer is prevented, the crack of the unexposed film is small, the resolution is high, the strength of the mask film is large, and the peeling property after pattern formation is good, and a highly fine pattern can be formed. A pattern forming material, a pattern forming apparatus including the pattern forming material, and a pattern forming method using the pattern forming material have not been provided, and further improvement development is expected.

專利文獻1 日本專利特開2002-268211號公報專利文獻2 特開2003-29399號公報專利文獻3 特開2004-4527號公報專利文獻2 特開2004-4528號公報Japanese Unexamined Patent Publication No. Publication No. JP-A No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No.

本發明係鑑於該現況而作,其課題在解決向來之上述諸問題,達成以下目的。亦即,本發明之目的在提供面狀故障少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,可形成更高度精細圖案之圖案形成材料,與備有該圖案形成材料之圖案形成裝置及使用上述圖案形成材料之圖案形成方法。The present invention has been made in view of the above circumstances, and the object of the present invention is to solve the above problems. That is, the object of the present invention is to provide a surface failure, to prevent light leakage caused by a color developer, to have less cracking of an unexposed film, to have high resolution, to have a high strength of a mask film, and to have good peelability after pattern formation. A pattern forming material for forming a more highly detailed pattern, a pattern forming device including the pattern forming material, and a pattern forming method using the pattern forming material.

用以解決上述課題之手段如下。亦即,<1>具有支持體、及該支持體上之感光層,該感光層含(A)結合劑、(B)聚合性化合物、(C)光聚合引發劑、(D)雜縮環系化合物、(E)聚合抑制劑、(F)顯色劑及(G)有機溶劑,其中(A)結合劑之酸值在50~400mgKOH/g,且質量平均分子量為10,000~100,000,(B)聚合性化合物含有(b1)具烏拉坦(urethane)基之化合物、(b2)具芳基之化合物及(b3)具有聚氧化伸烷鏈之化合物中至少任一,(G)有機溶劑係選自酮類、醇類及醚類中至少1種,且殘留量0.5質量%以下為其特徵之圖案形成材料。該<1>所述之圖案形成材料,含於感光層之結合劑的酸值及重量平均分子量予以規定,且不只規定含於聚合性化合物之化合物,並規定有機溶劑所含化合物及含量,即能形成面狀故障少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,而更高度精細之圖案。The means for solving the above problems are as follows. That is, <1> has a support and a photosensitive layer on the support, and the photosensitive layer contains (A) a binder, (B) a polymerizable compound, (C) a photopolymerization initiator, and (D) a hybrid ring. a compound, (E) a polymerization inhibitor, (F) a color developer, and (G) an organic solvent, wherein the (A) binder has an acid value of 50 to 400 mgKOH/g and a mass average molecular weight of 10,000 to 100,000, (B) The polymerizable compound contains at least one of (b1) a compound having a urethane group, (b2) a compound having an aryl group, and (b3) a compound having a polyoxyalkylene chain, (G) an organic solvent selected A pattern forming material characterized by at least one of a ketone, an alcohol, and an ether, and having a residual amount of 0.5% by mass or less. The pattern forming material according to the above <1>, wherein the acid value and the weight average molecular weight of the binder contained in the photosensitive layer are defined, and not only the compound contained in the polymerizable compound but also the compound and the content of the organic solvent are specified, that is, It can form less surface failure, can prevent light leakage caused by coloring agent, has less cracking of unexposed film, has high resolution, high strength of covering film, and good peeling property after pattern formation, and a more highly detailed pattern.

<2>如上述<1>之圖案形成材料,其中(A)結合劑之I/O值在0.35~0.60。<2> The pattern forming material according to <1> above, wherein the (A) binder has an I/O value of from 0.35 to 0.60.

<3>如上述<1>或<2>之圖案形成材料,其中(B)聚合性化合物含具有聚氧化伸烷鏈之化合物,該聚氧化伸烷鏈具有伸乙基及伸丙基中至少任一。<3> The pattern forming material according to the above <1> or <2>, wherein the (B) polymerizable compound contains a compound having a polyoxyalkylene chain having at least an ethyl group and a stretching propyl group. Either.

<4>如上述<1>至<3>中任一之圖案形成材料,其中(D)雜縮環系化合物含選自雜縮環系酮化合物、喹啉化合物及吖啶化合物中至少1種。The pattern forming material according to any one of <1> to <3> wherein the (D) heterocyclic ring compound contains at least one selected from the group consisting of a heterocyclic ketone compound, a quinoline compound, and an acridine compound. .

<5>如上述<1>至<4>中任一之圖案形成材料,其中(E)聚合抑制劑係選自具有至少2個以上酚式羥基之化合物、具有經亞胺基取代之芳環的化合物、具有經亞胺基取代之雜環的化合物及受阻酚化合物中至少1種。The pattern forming material according to any one of <1> to <4> wherein the (E) polymerization inhibitor is selected from the group consisting of a compound having at least two phenolic hydroxyl groups and an aromatic ring substituted with an imine group. At least one of a compound, a compound having a heterocyclic ring substituted with an imine group, and a hindered phenol compound.

<6>如上述<1>至<5>中任一之圖案形成材料,其中更含有具三芳基甲烷骨架之化合物的染料、還原劑及氫給予體化合物。The pattern forming material according to any one of <1> to <5>, further comprising a dye having a compound having a triarylmethane skeleton, a reducing agent, and a hydrogen donor compound.

<7>如上述<1>至<6>中任一之圖案形成材料,其中(G)有機溶劑係甲基乙基酮、環己酮、甲醇、甲基丙二醇及四氫呋喃之至少任一。<7> The pattern forming material according to any one of <1> to <6> wherein the (G) organic solvent is at least one of methyl ethyl ketone, cyclohexanone, methanol, methyl propylene glycol, and tetrahydrofuran.

<8>如上述<6>或<7>之圖案形成材料,其中含有具三芳基甲烷骨架之化合物的染料係芳基磺酸化合物。<8> A pattern forming material according to the above <6> or <7>, which comprises a dye-based arylsulfonic acid compound having a compound having a triarylmethane skeleton.

<9>如上述<6>至<8>中任一之圖案形成材料,其中還原劑係1-苯-3-吡唑啉酮(phenidone)。<9> The pattern forming material according to any one of <6> to <8> wherein the reducing agent is 1-phen-3-pyrazolone.

<10>如上述<1>至<9>中任一之圖案形成材料,其中感光層於將該感光層曝光顯像時,該感光層曝光部分之厚度在該曝光及顯像後不變,用於上述曝光之最小能量在0.1~20mJ/cm2<10> The pattern forming material according to any one of <1> to <9> wherein, when the photosensitive layer is exposed to the photosensitive layer, the thickness of the exposed portion of the photosensitive layer is unchanged after the exposure and development. The minimum energy used for the above exposure is 0.1 to 20 mJ/cm 2 .

<11>如上述<1>至<10>中任一之圖案形成材料,其中結合劑於鹼性水溶液呈膨潤性或溶解性。<11> The pattern forming material according to any one of <1> to <10> wherein the binder is swellable or soluble in an aqueous alkaline solution.

<12>如上述<1>至<11>中任一之圖案形成材料,其中結合劑含共聚物,該共聚物具有來自苯乙烯及苯乙烯衍生物中至少任一之構造單元。The pattern forming material according to any one of <1> to <11> wherein the binder contains a copolymer having a structural unit derived from at least one of styrene and a styrene derivative.

<13>如上述<1>至<12>中任一之圖案形成材料,其中結合劑之玻璃轉移溫度在80℃以上。<13> The pattern forming material according to any one of <1> to <12> wherein the glass transition temperature of the binder is 80 ° C or higher.

<14>如上述<1>至<13>中任一之圖案形成材料,其中聚合抑制劑具有選自芳環、雜環、亞胺基及酚式羥基中至少1種。The pattern forming material according to any one of <1> to <13> wherein the polymerization inhibitor has at least one selected from the group consisting of an aromatic ring, a heterocyclic ring, an imido group, and a phenolic hydroxyl group.

<15>如上述<1>至<14>中任一之圖案形成材料,其中聚合抑制劑係選自兒茶酚、啡噻、啡、受阻酚及這些之衍生物中至少1種。<15> The pattern forming material according to any one of <1> to <14> wherein the polymerization inhibitor is selected from the group consisting of catechol and thiophene ,coffee At least one of hindered phenol and derivatives thereof.

<16>如上述<1>至<15>中任一之圖案形成材料,其中聚合抑制劑之含量係對於聚合性化合物之0.005~0.5質量%。<16> The pattern forming material according to any one of <1> to <15> wherein the content of the polymerization inhibitor is 0.005 to 0.5% by mass based on the polymerizable compound.

<17>如上述<1>至<16>中任一之圖案形成材料,其中光聚合引發劑係選自鹵化烴衍生物、氧化膦、六芳基聯咪唑、肟衍生物、有機過氧化物、硫化合物、酮化合物、醯基氧化膦化合物、芳香族鎓鹽及酮肟醚中至少1種。The pattern forming material according to any one of <1> to <16> wherein the photopolymerization initiator is selected from the group consisting of a halogenated hydrocarbon derivative, a phosphine oxide, a hexaarylbiimidazole, an anthracene derivative, and an organic peroxide. At least one of a sulfur compound, a ketone compound, a mercaptophosphine oxide compound, an aromatic onium salt, and a ketoxime.

<18>如上述<1>至<17>中任一之圖案形成材料,其中光聚合引發劑含六芳基聯咪唑。<18> The pattern forming material according to any one of <1> to <17> wherein the photopolymerization initiator contains hexaarylbiimidazole.

<19>如上述<1>至<18>中任一之圖案形成材料,其中感光層之厚度在1~100 μ m。<19> The pattern forming material according to any one of <1> to <18> wherein the photosensitive layer has a thickness of from 1 to 100 μm.

<20>如上述<1>至<19>中任一之圖案形成材料,其中支持體係長條狀。<20> The pattern forming material according to any one of <1> to <19> wherein the support system is elongated.

<21>如上述<1>至<20>中任一之圖案形成材料,其中圖案形成材料係長條狀,捲成卷狀。The pattern forming material according to any one of <1> to <20> wherein the pattern forming material is elongated and rolled into a roll shape.

<22>如上述<1>至<21>中任一之圖案形成材料,其中於感光層上有保護膜。<22> The pattern forming material according to any one of <1> to <21> wherein a protective film is provided on the photosensitive layer.

<23>如<1>至<22>中任一之圖案形成材料,其中於感光層上有保護膜,該保護膜含選自聚丙烯樹脂、乙烯-丙烯共聚樹脂及聚對酞酸乙二酯樹脂中至少1種。<23> The pattern forming material according to any one of <1> to <22> wherein a protective film is provided on the photosensitive layer, the protective film comprising a polypropylene resin, an ethylene-propylene copolymer resin, and a polyethylene terephthalate. At least one of the ester resins.

<24>一種備有如上述<1>至<23>中任一之圖案形成材料的圖案形成裝置,其特徵為至少具有可照光之照光機構,及調制來自該照光機構之光,對於上述圖案形成材料之感光層進行曝光之光調制機構。該<24>所述之圖案形成裝置中,上述照光機構朝向上述光調制機構照光。上述光調制機構調制來自上述照光機構之光。由上述光調制機構調制之光使上述感光層曝光。例如,之後將上述感光層顯像,即有高度精細圖案之形成。<25>如上述<24>之圖案形成裝置,其中光調制機構更具有基於形成之圖案資訊生成控制信號的圖案信號生成機構,依該圖案信號生成機構生成之控制信號,調制照射自照光機構之光。該<25>所述之圖案形成裝置中,上述光調制機構因具上述圖案信號生成機構,照射自上述照光機構之光即依該圖案信號生成機構生成之控制信號受到調制。<24> A pattern forming apparatus comprising the pattern forming material according to any one of the above <1> to <23>, characterized in that at least the illuminating mechanism is provided, and light from the illuminating means is modulated, and the pattern is formed A light modulating mechanism for exposing the photosensitive layer of the material. In the pattern forming apparatus according to <24>, the illumination unit is illuminated toward the light modulation unit. The light modulation mechanism modulates light from the illumination unit. The light modulated by the light modulating mechanism exposes the photosensitive layer. For example, the above photosensitive layer is then developed, that is, a highly fine pattern is formed. <25> The pattern forming apparatus according to the above <24>, wherein the light modulating means further has a pattern signal generating means for generating a control signal based on the formed pattern information, and modulating the irradiation of the self-illuminating means according to the control signal generated by the pattern signal generating means Light. In the pattern forming apparatus according to the above aspect, the light modulating means is configured to have the pattern signal generating means, and the light irradiated from the illuminating means is modulated by the control signal generated by the pattern signal generating means.

<26>如<24>或<25>之圖案形成裝置,其中光調制機構具有n個像素部,該n個像素部中連續配置之任意未達n個之上述像素部,可依形成之圖案資訊予以控制。該<26>所述之圖案形成裝置中,上述光調制機構之n個像素部中連續配置之任意未達n個之上述像素部因係依圖案資訊加以控制,來自上述照光機構之光可予高速調制。<26> The pattern forming apparatus according to <24> or <25>, wherein the light modulating mechanism has n pixel portions, and any of the n pixel portions that are consecutively arranged in the n pixel portions can be formed according to the pattern Information is controlled. In the pattern forming apparatus according to the above aspect, the pixel portion of the n pixel portions of the light modulating mechanism that is continuously disposed in any of the n pixels is controlled by the pattern information, and the light from the illumination unit can be used. High speed modulation.

<27>如<24>至<26>中任一之圖案形成裝置,其中光調制機構係空間光調制元件。<27> The pattern forming device of any one of <24> to <26> wherein the light modulating mechanism is a spatial light modulating element.

<28>如<27>之圖案形成裝置,其中空間光調制元件係數位微鏡裝置(DMD)。<28> The pattern forming device of <27>, wherein the spatial light modulation element coefficient bit micromirror device (DMD).

<29>如<26>至<28>中任一之圖案形成裝置,其中像素部係微鏡。<29> The pattern forming device of any one of <26> to <28> wherein the pixel portion is a micromirror.

<30>如<24>至<29>中任一之圖案形成裝置,其中照光機構可將2以上之光合併而照射。該<30>所述之圖案形成裝置中,照光機構因可將2以上之光合併而照射,曝光即以焦點深度大之曝光光進行。結果於上述圖案形成材料之曝光可極高度精細地進行。例如之後將上述感光層顯像,可形成極高度精細之圖案。<30> The pattern forming apparatus according to any one of <24> to <29> wherein the illuminating means combines two or more lights to illuminate. In the pattern forming apparatus according to the <30>, the illuminating means can illuminate by combining two or more lights, and the exposure is performed by exposure light having a large depth of focus. As a result, the exposure of the pattern forming material described above can be performed extremely finely. For example, after the above photosensitive layer is developed, a highly highly detailed pattern can be formed.

<31>如<24>至<30>中任一之圖案形成裝置,其中照光機構具有複數之雷射、多模光纖及將各該複數之雷射所照射之雷射光聚光合併於上述多模光纖之集合光學系統。該<31>之圖案形成裝置中,上述照光機構藉上述集合光學系統因可將各上述複數之雷射所照射之雷射光聚光,合併於上述多模光纖,曝光即以焦點深度大之曝光光進行。結果於上述圖案形成材料之曝光可極高度精細地進行。例如之後將上述感光層顯像,可形成極高度精細之圖案。<31> The pattern forming apparatus of any one of <24> to <30> wherein the illumination mechanism has a plurality of lasers, a multimode optical fiber, and condensing the laser light irradiated by each of the plurality of lasers into the plurality of A collection optical system of mode fibers. In the pattern forming apparatus according to the <31>, the illumination unit condenses the laser light irradiated by each of the plurality of lasers by the collection optical system, and combines the multi-mode optical fibers to expose the exposure to a large depth of focus. Light is carried out. As a result, the exposure of the pattern forming material described above can be performed extremely finely. For example, after the above photosensitive layer is developed, a highly highly detailed pattern can be formed.

<32>一種圖案形成方法,其特徵為至少包含對於如<1>至<23>中任一之圖案形成材料之該感光層進行曝光。該<32>之圖案形成方法中,曝光係對於上述圖案形成材料進行。例如之後將上述感光層顯像,可形成高度精細之圖案。<32> A pattern forming method, characterized in that at least the photosensitive layer of the pattern forming material of any one of <1> to <23> is exposed. In the pattern forming method of <32>, the exposure system is performed on the pattern forming material. For example, after the above photosensitive layer is developed, a highly fine pattern can be formed.

<33>如<32>之圖案形成方法,其中一邊進行加熱及加壓之至少任一將圖案形成材料層積於基體上,並曝光。<33> The pattern forming method according to <32>, wherein the pattern forming material is laminated on the substrate while exposing at least one of heating and pressurization.

<34>如<32>或<33>之圖案形成方法,其中曝光係基於形成之圖案資訊,依樣進行。<34> A pattern forming method according to <32> or <33>, wherein the exposure is performed based on the formed pattern information.

<35>如<32>至<34>中任一之圖案形成方法,其中曝光係基於形成之圖案資訊生成控制信號,使用依該控制信號調制之光進行。該<35>之圖案形成方法中,基於形成之圖案資訊生成控制信號,依該控制信號作光之調制。<35> The pattern forming method according to any one of <32> to <34> wherein the exposure is based on the formed pattern information generation control signal, and is performed using light modulated according to the control signal. In the pattern forming method of <35>, a control signal is generated based on the formed pattern information, and light modulation is performed according to the control signal.

<36>如<32>至<35>中任一之圖案形成方法,其中曝光係使用以光照射之照光機構,及基於形成之圖案資訊調制照射自上述照光機構之光的光調制機構進行。<36> The pattern forming method according to any one of <32> to <35> wherein the exposure system is performed using an illumination mechanism that illuminates with light, and a light modulation mechanism that modulates light that is irradiated from the illumination unit based on the formed pattern information.

<37>如<36>之圖案形成方法,其中曝光係以光調制機構將光調制後,通過具有可校正上述光調制機構之像素部射出面之變形所致之像差的非球面之微透鏡排列成之微透鏡陣列而進行。該<37>之圖案形成方法中,經上述光調制機構調制之光,因通過上述微透鏡陣列之上述非球面,上述像素部射出面之變形所致之像差受到校正。結果成像於圖案形成材料之像的變形受抑制,於該圖案形成材料之曝光極高度精細地進行。例如之後將上述感光層顯像,可形成高度精細之圖案。<37> The pattern forming method according to <36>, wherein the exposure system modulates light by a light modulation mechanism, and passes through an aspherical microlens having aberrations correctable by deformation of an exit surface of the pixel portion of the light modulation mechanism. Performed by arranging the microlens arrays. In the pattern forming method of <37>, the light modulated by the light modulating means is corrected by the distortion of the exit surface of the pixel portion by the aspherical surface of the microlens array. As a result, the deformation of the image formed on the pattern forming material is suppressed, and the exposure pole of the pattern forming material is highly finely performed. For example, after the above photosensitive layer is developed, a highly fine pattern can be formed.

<38>如<37>之圖案形成方法,其中非球面係複曲面。該<38>之圖案形成方法中,因上述非球面係複曲面,上述像素部放射面之變形所致之像差可予有效校正,成像於圖案形成材料之像的變形有效受到抑制。結果,於上述圖案形成材料之曝光極高度精細地進行。例如之後將上述感光層顯像,可形成高度精細之圖案。<38> A pattern forming method according to <37>, wherein the aspherical surface is a toric surface. In the pattern forming method of <38>, the aberration due to the deformation of the radiating surface of the pixel portion can be effectively corrected by the aspherical toric surface, and the deformation of the image formed on the pattern forming material is effectively suppressed. As a result, the exposure electrode of the pattern forming material described above is highly finely performed. For example, after the above photosensitive layer is developed, a highly fine pattern can be formed.

<39>如<32>至<38>中任一之圖案形成方法,其中曝光係通過孔徑陣列進行。該<39>之圖案形成方法中,因曝光係通過孔徑陣列進行,消光比提升。結果曝光極高度精細地進行。例如之後將上述感光層顯像,可形成極高度精細之圖案。<39> A pattern forming method according to any one of <32> to <38> wherein the exposure system is performed through an aperture array. In the pattern forming method of <39>, since the exposure system is performed through the aperture array, the extinction ratio is improved. As a result, the exposure is extremely fine. For example, after the above photosensitive layer is developed, a highly highly detailed pattern can be formed.

<40>如<32>至<39>中任一之圖案形成方法,其中曝光係使曝光光與感光層相對移動而一邊進行。該<40>之圖案形成方法中,因使上述經調制之光與上述感光層相對移動一邊進行曝光,曝光可高速進行。例如之後將上述感光層顯像,可形成高度精細之圖案。<40> The pattern forming method according to any one of <32> to <39> wherein the exposure is performed while the exposure light and the photosensitive layer are relatively moved. In the pattern forming method of <40>, exposure is performed while moving the modulated light relative to the photosensitive layer, and exposure can be performed at high speed. For example, after the above photosensitive layer is developed, a highly fine pattern can be formed.

<41>如<32>至<40>中任一之圖案形成方法,其中曝光係於感光層之部分區域進行。<41> The pattern forming method of any one of <32> to <40>, wherein the exposure is performed in a partial region of the photosensitive layer.

<42>如<32>至<41>中任一之圖案形成方法,其中進行曝光後進行感光層之顯像。該<42>之圖案形成方法中,因於進行上述曝光後將上述感光層顯像,可形成高度精細之圖案。<42> The pattern forming method according to any one of <32> to <41> wherein the exposure of the photosensitive layer is performed after the exposure. In the pattern forming method of <42>, the photosensitive layer is developed after the exposure, and a highly fine pattern can be formed.

<43>如<42>之圖案形成方法,其中進行顯像後進行永久圖案之形成。<43> A pattern forming method according to <42>, wherein the formation of the permanent pattern is performed after development.

<44>如<43>之圖案形成方法,其中永久圖案係電路圖案,該永久圖案之形成係經蝕刻處理及鍍敷處理之至少任一進行。<44> The pattern forming method according to <43>, wherein the permanent pattern is a circuit pattern, and the formation of the permanent pattern is performed by at least one of an etching treatment and a plating treatment.

依本發明,習知問題可予解決,能提供面狀故障少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,可形成更高度精細圖案之圖案形成材料,與備有該圖案形成材料之圖案形成裝置及使用上述圖案形成材料之圖案形成方法。According to the present invention, the conventional problem can be solved, and the surface failure can be provided, the light leakage caused by the color developer can be prevented, the crack of the unexposed film is small, the resolution is high, the strength of the mask film is large, and the pattern is peeled off after the formation. A pattern forming material capable of forming a more highly detailed pattern, a pattern forming apparatus provided with the pattern forming material, and a pattern forming method using the pattern forming material.

(圖案形成材料)(patterning material)

本發明之圖案形成材料至少具有支持體及該支持體上之感光層,亦可有保護膜、適當選擇之其它層。The pattern forming material of the present invention has at least a support and a photosensitive layer on the support, and may have a protective film and other layers appropriately selected.

<感光層><Photosensitive layer>

上述感光層含(A)結合劑、(B)聚合性化合物、(C)光聚合引發劑、(D)雜縮環系化合物、(E)聚合抑制劑、(F)顯色劑及(G)有機溶劑,必要時含染料、還原劑等適當選擇之其它成分。而上述感光層之積層數可係1層亦可係2層以上。The photosensitive layer contains (A) a binder, (B) a polymerizable compound, (C) a photopolymerization initiator, (D) a heterocyclic ring compound, (E) a polymerization inhibitor, (F) a color developer, and (G) An organic solvent, if necessary, a dye, a reducing agent, or the like, which is appropriately selected. The number of layers of the photosensitive layer may be one layer or two or more layers.

將上述感光層曝光顯像時,不使該感光層曝光部分之厚度在該顯像前後起變化之光的最小能量係以0.1~20mJ/cm2 為佳,0.5~10mJ/cm2 更佳,1~8mJ/cm2 尤佳。When the photosensitive layer is exposed and developed, the minimum energy of the light which does not change the thickness of the exposed portion of the photosensitive layer before and after the development is preferably 0.1 to 20 mJ/cm 2 , more preferably 0.5 to 10 mJ/cm 2 . 1~8mJ/cm 2 is especially good.

上述最小能量未達0.1mJ/cm2 則會於處理步驟發生漏光,超過20mJ/cm2 則曝光費時,處理速度變慢。It said minimum energy less than 0.1mJ / cm 2 of light leakage may occur in the processing step, than 20mJ / cm 2, the exposure time consuming, the process slows down.

於此,上述「不使感光層曝光部分之厚度在該曝光及顯像後起變化之用於上述曝光之光的最小能量」指所謂顯像感度,可由例如,將感光層曝光時用於該曝光之光的能量(曝光量)與後續於上述曝光之上述顯像處理所生成之上述硬化層之厚度的關係圖(感度曲線)求出。Here, the above-mentioned "minimum energy for the light for the exposure which does not change the thickness of the exposed portion of the photosensitive layer after the exposure and development" means a so-called development sensitivity, which can be used, for example, when exposing the photosensitive layer The energy (exposure amount) of the light to be exposed is obtained from a relationship (sensitivity curve) of the thickness of the hardened layer which is formed by the development process of the exposure described above.

上述硬化層之厚度隨上述曝光量之增加而增加,之後,與上述曝光前上述感光層之厚度約略相等並約略一定。上述顯像感度係讀取上述硬化層之厚度約略一定時之最小曝光量而求出之值。The thickness of the hardened layer increases as the amount of exposure increases, and is then approximately equal to the thickness of the photosensitive layer before exposure and is approximately constant. The development sensitivity is a value obtained by reading the minimum exposure amount when the thickness of the hardened layer is approximately constant.

上述硬化層之厚度與上述曝光前上述感光層之厚度差在+/- 1 μ m以內時,上述硬化層之厚度可視為不因曝光及顯像起變化。When the thickness of the hardened layer is less than +/- 1 μm from the thickness of the photosensitive layer before the exposure, the thickness of the hardened layer may be regarded as not to be changed by exposure and development.

上述硬化層及上述曝光前上述感光層之厚度的測定方法無特殊限制,可隨目的適當選擇,有例如使用膜厚測定裝置、表面粗度測定機(例如SURFCOM1400D,東京精密(股)製)等之測定方法。The method for measuring the thickness of the hardened layer and the photosensitive layer before the exposure is not particularly limited, and may be appropriately selected according to the purpose, and for example, a film thickness measuring device or a surface roughness measuring device (for example, SURFCOM1400D, manufactured by Tokyo Precision Co., Ltd.) may be used. The method of measurement.

-(A)結合劑-- (A) binder -

上述結合劑酸值為50~400mgKOH/g,75~300mgKOH/g較佳,100~250mgKOH/g更佳。The above-mentioned binder has an acid value of 50 to 400 mgKOH/g, preferably 75 to 300 mgKOH/g, more preferably 100 to 250 mgKOH/g.

上述酸值未達50mgKOH/g則顯像性不足,解析度差,不得高度精細之電路圖案等永久圖案,超過400mgKOH/g則圖案之耐顯像液性及密著性之至少其一會惡化,不得高度精細之電路圖案等永久圖案。When the acid value is less than 50 mgKOH/g, the development is insufficient, the resolution is poor, and a permanent pattern such as a circuit pattern of a high degree of precision is not required. When the value exceeds 400 mgKOH/g, at least the liquid resistance and the adhesion of the pattern deteriorate. A permanent pattern such as a highly detailed circuit pattern shall not be used.

上述結合劑之分子量係以質量平均分子量10,000~100,000為佳,30,000~80,000更佳。The molecular weight of the above binder is preferably 10,000 to 100,000 by mass average molecular weight, more preferably 30,000 to 80,000.

上述質量平均分子量未達10,000則膜之強度易有不足,並會難以製造,超過100,000則顯像性會下降。When the mass average molecular weight is less than 10,000, the strength of the film tends to be insufficient, and it is difficult to manufacture, and if it exceeds 100,000, the developability is lowered.

上述I/O值之上限,例如由提升解析度及遮覆性的至少任一之觀點以0.60為佳,0.58更佳。The upper limit of the I/O value is preferably 0.60, and more preferably 0.58, from the viewpoint of at least one of improving the resolution and the covering property.

上述I/O值之下限,例如由提升顯像性之觀點以0.35為佳,0.40更佳。The lower limit of the above I/O value is preferably 0.35, more preferably 0.40, from the viewpoint of improving developability.

上述結合劑I/O值之調整方法係,適當選擇構成共聚物之單體種類及聚合該單體之際的聚合比(含量)之至少任一,可調整為例如0.35~0.60。The method of adjusting the binding agent I/O value is appropriately selected from at least one of the monomer type constituting the copolymer and the polymerization ratio (content) at the time of polymerizing the monomer, and can be adjusted, for example, to 0.35 to 0.60.

上述I/O值亦稱(無機性值)/(有機性值)乃以有機概念處置各種有機化合物之極性的值,係於各官能基設定參數的官能基貢獻法之一。詳言之,上述I/O值已詳述於有機概念圖(甲田善生 著,三共出版(1984));KUMAMOTO PHARMACEUTICAL BULLETIN,第1號,第1~16項(1954年);化學領域,第11卷,第10號,719~725項(1957年);FRAGRANCE JOURNAL,第34號,第97~111項(1979年);FRAGRANCE JOURNAL,第50號,第79~82項(1981年)等文獻。The above-mentioned I/O value is also called (inorganic value) / (organic value), which is an organic concept for treating the polarity of various organic compounds, and is one of the functional group contribution methods for setting parameters of each functional group. In detail, the above I/O values have been detailed in the organic concept map (Jia Tian Shansheng, San Gong Publishing (1984)); KUMAMOTO PHARMACEUTICAL BULLETIN, No. 1, No. 1~16 (1954); Chemistry, No. Volume 11, No. 10, 719-725 (1957); FRAGRANCE JOURNAL, No. 34, No. 97-111 (1979); FRAGRANCE JOURNAL, No. 50, No. 79-82 (1981), etc. literature.

上述I/O值之概念係將化合物之性質分成代表共價鍵性之有機性基,及代表離子鍵性之無機性基,將所有有機化合物各以稱為有機軸及無機軸之直角座標上的1點表示。The concept of the above I/O value is to divide the properties of the compound into organic groups representing covalent bonds, and inorganic groups representing ionic bonds, and all organic compounds are referred to as orthogonal coordinates of the organic and inorganic axes. The 1 point is indicated.

上述無機性值係將有機化合物所具之種種取代基、鍵結等對於沸點之影響的大小,以羥基為基準而數值化。具體言之,因直鏈醇之沸點曲線與直鏈石蠟之沸點曲線之距離,在碳原子數5附近約為100℃,將1個羥基之影響定為數值100,基於該數值,各種取代基或各種鍵結等對於沸點之影響的數值化之值,即有機化合物所具取代基之無機性值。例如,-COOH基之無機性值為150,雙鍵之無機性值為2。因此某種有機化合物之無機性值指該化合物所具各種取代基、鍵結等的無機性值之總和。The inorganic value is a numerical value which affects the boiling point of various substituents, bonds, and the like of the organic compound, and is quantified based on the hydroxyl group. Specifically, the distance between the boiling point curve of the linear alcohol and the boiling point curve of the linear paraffin is about 100 ° C in the vicinity of the carbon number of 5, and the influence of one hydroxyl group is set to a value of 100. Based on the value, various substituents are used. Or the value of the numerical value of the influence of various bonds and the like on the boiling point, that is, the inorganic value of the substituent of the organic compound. For example, the -COOH group has an inorganic value of 150 and the double bond has an inorganic value of 2. Therefore, the inorganic value of an organic compound means the sum of inorganic values of various substituents, bonds, and the like of the compound.

上述有機性值係以分子內之亞甲基為單位,以該亞甲基所代表之碳原子於沸點之影響為基準而定出。亦即,因直鏈飽和烴化合物在碳原子數5~10附近加1個碳原子所致之沸點上升的平均值為20℃,以之為基準,定出1個碳原子之有機性值為20,以此為基礎的各種取代基、鍵結等對於沸點之影響的數值化之值乃有機性值。例如硝基(-NO2 )之有機性值為70。The above organic value is determined by the influence of the boiling point of the carbon atom represented by the methylene group based on the methylene group in the molecule. That is, the average value of the boiling point rise due to the addition of one carbon atom to the linear saturated hydrocarbon compound in the vicinity of 5 to 10 carbon atoms is 20 ° C, based on which the organic value of one carbon atom is determined. 20. The numerical value of the influence of various substituents, bonding, and the like on the boiling point based on this is an organic value. For example, the organic value of nitro (-NO 2 ) is 70.

上述I/O值愈近於0表示係愈非極性(疏水性、有機性愈大)之有機化合物,愈大則表示愈極性(親水性、無機性愈大)之有機化合物。The closer the I/O value is to 0, the more the non-polar (hydrophobic, organic) organic compound, and the larger the organic compound, the more polar (hydrophilic, inorganic).

以下說明上述I/O值的計算方法之一例。An example of the calculation method of the above I/O value will be described below.

甲基丙烯酸/甲基丙烯酸甲酯/苯乙烯共聚物(共聚物組成(莫耳比):2/5/3)之I/O值係,依以下方法計算該共聚物之無機性值及有機性值,由次式(上述共聚物之無機性值)/(上述共聚物之有機性值)計算求出。The I/O value of methacrylic acid/methyl methacrylate/styrene copolymer (copolymer composition (mole ratio): 2/5/3), the inorganic value of the copolymer and the organic value were calculated by the following method The property value was calculated from the following formula (the inorganic value of the above copolymer) / (the organic value of the above copolymer).

上述共聚物之無機性值係由求出(上述甲基丙烯酸之無機性值)×(上述甲基丙烯酸之莫耳比)、(上述甲基丙烯酸甲酯之無機性值)×(上述甲基丙烯酸甲酯之莫耳比)及(上述苯乙烯之無機性值)×(上述苯乙烯之莫耳比)的合計而計算。The inorganic value of the copolymer is determined by (the inorganic value of methacrylic acid) × (the molar ratio of the above methacrylic acid), (the inorganic value of the methyl methacrylate) × (the above methyl group) Calculated by the total of the molar ratio of methyl acrylate and (the inorganic value of styrene described above) × (the molar ratio of styrene described above).

上述甲基丙烯酸具1個羧基,上述甲基丙烯酸甲酯具1個酯基,上述苯乙烯具1個芳環,故上述甲基丙烯酸之無機性值為150(羧基之無機性值)×1(羧基之個數)=150,上述甲基丙烯酸甲酯之無機性值為60(酯基之無機性值)×1(酯基之個數)=60,上述苯乙烯之無機性值為15(芳環之無機性值)×1(芳環之個數)=15,而上述共聚物之無機性值由次式150×2(甲基丙烯酸之莫耳比)+60×5(甲基丙烯酸甲酯之莫耳比)+15×3(苯乙烯之莫耳比)計算為645。The methacrylic acid has one carboxyl group, the methyl methacrylate has one ester group, and the styrene has one aromatic ring. Therefore, the inorganic value of the methacrylic acid is 150 (inorganic value of the carboxyl group) × 1 (number of carboxyl groups) = 150, the inorganic value of the above methyl methacrylate is 60 (inorganic value of ester group) × 1 (number of ester groups) = 60, and the inorganic value of the above styrene is 15 (Inorganic value of aromatic ring) × 1 (number of aromatic rings) = 15, and the inorganic value of the above copolymer is from the formula 150 × 2 (molar ratio of methacrylic acid) + 60 × 5 (methacrylic acid) The molar ratio of methyl ester to +15 x 3 (molar ratio of styrene) was calculated to be 645.

上述共聚物之有機性值係由求出(上述甲基丙烯酸之有機性值)×(上述甲基丙烯酸之莫耳比)、(上述甲基丙烯酸甲酯之有機性值)×(上述甲基丙烯酸甲酯之莫耳比)及(上述苯乙烯之有機性值)×(上述苯乙烯之莫耳比)的合計而計算。The organic value of the above copolymer is determined by (the organic value of methacrylic acid) × (the molar ratio of the above methacrylic acid), (the organic value of the above methyl methacrylate) × (the above methyl group) Calculated by the total of the molar ratio of methyl acrylate and (the organic value of styrene described above) × (the molar ratio of styrene described above).

上述甲基丙烯酸有4個碳原子,上述甲基丙烯酸甲酯有5個碳原子,上述苯乙烯有8個碳原子,故上述甲基丙烯酸之有機性值為20(碳原子之有機性值)×4(碳原子數)=80,上述甲基丙烯酸甲酯之有機性值為20(碳原子之有機性值)×5(碳原子數)=100,上述苯乙烯之有機性值為20(碳原子之有機性值)×8(碳原子數)=160,而上述共聚物之有機性值由次式80×2(上述甲基丙烯酸之莫耳比)+100×5(上述甲基丙烯酸甲酯之莫耳比)+160×3(上述苯乙烯之莫耳比)計算為1140。The methacrylic acid has 4 carbon atoms, the methyl methacrylate has 5 carbon atoms, and the styrene has 8 carbon atoms. Therefore, the organic value of the methacrylic acid is 20 (the organic value of carbon atoms). ×4 (number of carbon atoms) = 80, and the organic value of the above methyl methacrylate is 20 (organic value of carbon atom) × 5 (number of carbon atoms) = 100, and the organic value of the above styrene is 20 ( The organic value of carbon atoms) × 8 (number of carbon atoms) = 160, and the organic value of the above copolymer is from the formula 80 × 2 (the above molar ratio of methacrylic acid) + 100 × 5 (the above methacrylic acid The molar ratio of the ester to +160 x 3 (the molar ratio of the above styrene) was calculated to be 1140.

故上述共聚物之I/O值即為645(上述共聚物之無機性值)/1140(上述共聚物之有機性值),0.566。Therefore, the I/O value of the above copolymer was 645 (inorganic value of the above copolymer) / 1140 (organic value of the above copolymer), 0.566.

上述結合劑,只須上述I/O值在上述數值範圍,無特殊限制,可隨目的適當選擇,亦可例如具有酸性基。The above-mentioned binder is only required to have the above I/O value within the above numerical range, and is not particularly limited, and may be appropriately selected depending on the purpose, and may have, for example, an acidic group.

上述結合劑若酸值及質量平均分子量在上述範圍即無特殊限制,以例如於鹼性水溶液具膨潤性者為佳,於鹼性水溶液具可溶性者更佳。結合劑中含有聚合性基亦佳。The above-mentioned binder is not particularly limited as long as the acid value and the mass average molecular weight are in the above range, and it is preferably, for example, those having a swelling property in an alkaline aqueous solution and being more soluble in an alkaline aqueous solution. It is also preferred that the binder contains a polymerizable group.

於鹼性水溶液呈膨潤性或溶解性,以例如具酸性基為合適。It is swellable or soluble in an aqueous alkaline solution, and is preferably an acidic group, for example.

上述酸性基無特殊限制,可隨目的適當選擇,有例如羧基、磺酸基、磷酸基等,其中以羧基為佳。The above acidic group is not particularly limited and may be appropriately selected depending on the purpose, and examples thereof include a carboxyl group, a sulfonic acid group, a phosphoric acid group and the like, and among them, a carboxyl group is preferred.

具羧基之結合劑有例如具羧基之伸乙基共聚物、聚烏拉坦樹脂、聚醯胺樹脂、改質環氧樹脂等,其中由塗敷溶劑中之溶解度、於鹼性水溶液之溶解度、合成適性、膜物性之調整容易度等之觀點,係以具羧基之伸乙基共聚物為佳。而由顯像性之觀點則以苯乙烯及苯乙烯衍生物的至少任一之共聚物為佳。The carboxyl group-bonding agent is, for example, an ethyl group copolymer having a carboxyl group, a polyurethane resin, a polyamide resin, a modified epoxy resin, or the like, wherein solubility in a coating solvent, solubility in an alkaline aqueous solution, synthesis From the viewpoints of suitability and ease of adjustment of the physical properties of the membrane, it is preferred to use an ethyl group copolymer having a carboxyl group. From the viewpoint of development, a copolymer of at least any of styrene and a styrene derivative is preferred.

上述具羧基之伸乙基共聚物可由至少(1)具羧基之伸乙基單體及(2)能與這些共聚之單體的共聚而得。這些單體具體有例如特開2005-258431號公報之段落[0164]~[0201]及[0203]~[0205]所述之化合物等。The above-mentioned carboxyl group-extended ethyl copolymer may be obtained by copolymerization of at least (1) a ethyl group having a carboxyl group and (2) a monomer copolymerizable with these. Specific examples of such a monomer include, for example, the compounds described in paragraphs [0164] to [0201] and [0203] to [0205] of JP-A-2005-258431.

上述感光層中上述結合劑之含量無特殊限制,可隨目的適當選擇,以例如10~90質量%為佳,20~80質量%更佳,40~80質量%尤佳。The content of the above-mentioned binder in the photosensitive layer is not particularly limited and may be appropriately selected depending on the purpose, and is preferably, for example, 10 to 90% by mass, more preferably 20 to 80% by mass, and particularly preferably 40 to 80% by mass.

上述含量未達10質量%則鹼顯像性、與印刷電路板形成用基板(例如銅面積層板)之密合性會下降,超過90質量%則對於顯像時間之安定性、硬化膜(遮覆膜)強度低。而上述含量亦可係上述結合劑及必要時併用之高分子結合劑之合計含量。When the content is less than 10% by mass, the adhesion between the alkali developability and the substrate for forming a printed circuit board (for example, a copper-area laminate) is lowered, and when it exceeds 90% by mass, the stability of the development time and the cured film (for the development time) The cover film has low strength. The above content may also be the total content of the above-mentioned binder and, if necessary, the polymer binder.

上述結合劑係有玻璃轉移溫度之物質時,該玻璃轉移溫度無特殊限制,可隨目的適當選擇,由例如上述圖案形成材料之黏性、邊緣融合及上述支持體之剝離性的至少任一之觀點,以80℃以上為佳,100℃以上更佳,120℃以上尤佳。When the above-mentioned binder is a material having a glass transition temperature, the glass transition temperature is not particularly limited and may be appropriately selected depending on the purpose, for example, at least one of viscosity of the pattern forming material, edge fusion, and peelability of the support. The viewpoint is preferably 80 ° C or more, more preferably 100 ° C or more, and particularly preferably 120 ° C or more.

上述玻璃轉移溫度未達80℃則會有上述圖案形成材料之黏性升高,上述支持體之剝離性惡化。When the glass transition temperature is less than 80 ° C, the viscosity of the pattern forming material is increased, and the peelability of the support is deteriorated.

-(B)聚合性化合物-- (B) Polymeric Compound -

上述聚合性化合物含(b1)具烏拉坦基之化合物及(b2)具芳基之化合物中至少任一,更於必要時含具有聚氧化伸烷基之化合物、其它聚合性化合物。這些聚合性基以具2種以上為佳。The polymerizable compound contains at least one of (b1) a compound having urethane group and (b2) a compound having an aryl group, and more preferably a compound having a polyoxyalkylene group or another polymerizable compound. These polymerizable groups are preferably two or more.

上述聚合性基有例如乙烯式不飽和鍵(例如(甲基)丙烯醯基,(甲基)丙烯醯胺基,苯伸乙基,乙烯酯、乙烯醚等伸乙基,烯丙醚、烯丙酯等芳基等)、可聚合之環醚基(例如環氧基、氧呾(oxetane)基等)等,其中以乙烯式不飽和鍵為佳。The above polymerizable group is, for example, an ethylenically unsaturated bond (for example, (meth) acrylonitrile, (meth) acrylamide, phenylethyl, vinyl, vinyl ether, etc. ethyl, allyl ether, alkene An aryl group such as a propyl ester or the like, a polymerizable cyclic ether group (e.g., an epoxy group, an oxetane group, etc.), and the like, wherein an ethylenically unsaturated bond is preferred.

--(b1)具烏拉坦基之化合物----(b1) compounds with urethane--

上述具烏拉坦基之化合物只要有烏拉坦基即無特殊限制,可隨目的適當選擇,有例如特開2005-258431號公報段落[0210]~[0262]所述之化合物等。The compound having the urethane group is not particularly limited as long as it has an urethane group, and may be appropriately selected according to the purpose, and examples thereof include a compound described in paragraphs [0210] to [0262] of JP-A-2005-258431.

上述具烏拉坦基之化合物於上述聚合性化合物中之含量以70質量%以下為佳,20~60質量%較佳,30~50質量%更佳。上述含量超過70質量%則有時解析度、密著性等惡化。The content of the urethane group-containing compound in the polymerizable compound is preferably 70% by mass or less, more preferably 20 to 60% by mass, and still more preferably 30 to 50% by mass. When the content is more than 70% by mass, the resolution, the adhesion, and the like may be deteriorated.

--(b2)具芳基之單體----(b2) monomer with aryl group --

上述具芳基之化合物只要有芳基即無特殊限制,可隨目的適當選擇,有例如具芳基之多元醇化合物、多元胺化合物及多元胺醇化合物之至少任一與不飽和羧酸之酯或醯胺等。The aryl group-containing compound is not particularly limited as long as it has an aryl group, and may be appropriately selected according to the purpose, and may be, for example, an ester of an aryl group-containing polyol compound, a polyamine compound, and a polyamine alcohol compound, and an ester of an unsaturated carboxylic acid. Or guanamine and the like.

具體有例如特開2005-258431號公報段落[0264]~[0271]所述之化合物等。Specific examples thereof include the compounds described in paragraphs [0264] to [0271] of JP-A-2005-258431.

上述具芳基之化合物於上述聚合性化合物中之含量以70質量%以下為佳,20~60質量%較佳,30~50質量%更佳。上述含量超過70質量%則有時解析度、密著性、遮覆性等惡化。The content of the above-mentioned aryl group-containing compound in the above polymerizable compound is preferably 70% by mass or less, more preferably 20 to 60% by mass, still more preferably 30 to 50% by mass. When the content is more than 70% by mass, the resolution, the adhesion, the covering property, and the like may be deteriorated.

--有聚氧化伸烷基鏈之化合物---- compounds with polyoxyalkylene chain --

本發明之圖案形成材料亦可含有聚氧化伸烷基鏈之化合物。上述有聚氧化伸烷基鏈之化合物無特殊限制,可係單官能單體,亦可係多官能單體。The pattern forming material of the present invention may also contain a compound of a polyoxyalkylene chain. The above compound having a polyoxyalkylene chain is not particularly limited and may be a monofunctional monomer or a polyfunctional monomer.

上述單官能單體有例如下述構造式(i)之化合物。The above monofunctional monomer is, for example, a compound of the following structural formula (i).

上述構造式(i)中R1 表氫原子或甲基。In the above formula (i), R 1 represents a hydrogen atom or a methyl group.

X表碳原子數2~6之伸烷基,以環狀構造者優於鏈狀構造者。鏈狀伸烷基可有分枝。該伸烷基有例如伸乙基、伸丙基、四亞甲基、五亞甲基、六亞甲基等,其中以伸乙基及伸丙基為佳。The X-sheet has an alkyl group having 2 to 6 carbon atoms, and the ring structure is superior to the chain structure. Chain alkyl groups may have branches. The alkylene group has, for example, an ethyl group, a propyl group, a tetramethylene group, a pentamethylene group, a hexamethylene group or the like, and an ethyl group and a propyl group are preferred.

n係1~30之整數,n係2以上時,複數之(-X-O-)可係相同或不同,(-X-O-)互不相同者有例如伸乙基與伸丙基之組合等。n is an integer of 1 to 30, and when n is 2 or more, the plural (-X-O-) may be the same or different, and (-X-O-) is different from each other, for example, an ethyl group and a propyl group. Combination, etc.

R2 有例如烷基、芳基、芳烷基等,這些基可經取代基取代。R 2 is, for example, an alkyl group, an aryl group, an arylalkyl group or the like, and these groups may be substituted with a substituent.

上述烷基係碳原子數1~20之烷基,有例如甲基、乙基、丙基、己基、環己基、2-乙己基、十二基、十六基、十八基等。該烷基可有取代基,亦可有分枝、環狀構造。The alkyl group is an alkyl group having 1 to 20 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hexyl group, a cyclohexyl group, a 2-ethylhexyl group, a dodecyl group, a hexadecyl group, and an octadecyl group. The alkyl group may have a substituent or a branched or cyclic structure.

上述芳烷基有例如苯甲基、苯乙基等。該芳烷基亦可有取代基。The above aralkyl group is, for example, a benzyl group or a phenethyl group. The aralkyl group may also have a substituent.

上述芳基有例如苯基、萘基、甲苯基、二甲苯基、乙苯基、甲氧苯基、丙苯基、丁苯基、第三丁苯基、辛苯基、壬苯基、氯苯基、氰苯基、二溴苯基、三溴苯基、聯苯基、苯甲苯基、α-二甲苯甲苯基等。該芳基亦可有取代基。The above aryl group is, for example, phenyl, naphthyl, tolyl, xylyl, ethylphenyl, methoxyphenyl, propylphenyl, butylphenyl, tert-butylphenyl, octylphenyl, phenylphenyl, chloro Phenyl, cyanophenyl, dibromophenyl, tribromophenyl, biphenyl, phenyltolyl, α-xylene tolyl, and the like. The aryl group may also have a substituent.

上述烷基、芳烷基及芳基之取代基有例如鹵素原子、芳基、脂烯基、烷氧基、氰基等。The substituent of the above alkyl group, aralkyl group and aryl group is, for example, a halogen atom, an aryl group, an aliphatic alkenyl group, an alkoxy group, a cyano group or the like.

上述鹵素原子有氟原子、氯原子、溴原子等。The halogen atom includes a fluorine atom, a chlorine atom, a bromine atom and the like.

上述芳基以總碳原子數6~20為佳,6~14更佳。該芳基有例如苯基、萘基、蒽基、甲氧苯基等。The above aryl group is preferably 6 to 20 in total carbon atoms, and more preferably 6 to 14 carbon atoms. The aryl group is, for example, a phenyl group, a naphthyl group, an anthranyl group, a methoxyphenyl group or the like

上述鏈烯基以總碳原子數2~10為佳,2~6更佳。該鏈烯基有例如乙炔基、伸丙基、丁醯基等。The above alkenyl group is preferably 2 to 10 in total carbon atoms, and more preferably 2 to 6 carbon atoms. The alkenyl group is, for example, an ethynyl group, a propyl group, a butyl group or the like.

上述烷氧基可有分枝,以總碳原子數1~10為佳,1~5更佳。該烷氧基有例如甲氧基、乙氧基、丙氧基、2-甲丙氧基等。The above alkoxy group may have a branch, and the total number of carbon atoms is preferably from 1 to 10, more preferably from 1 to 5. The alkoxy group is, for example, a methoxy group, an ethoxy group, a propoxy group, a 2-methylpropoxy group or the like.

上述構造式(i)之化合物,具體有下述構造式之化合物等。下述式中R表氫原子或甲基。n表1~30之整數,m及L各表1以上之整數,m+L表1~30之整數。Me表甲基,Bu表丁基。The compound of the above structural formula (i) specifically includes a compound of the following structural formula and the like. In the following formula, R represents a hydrogen atom or a methyl group. n The integers of Tables 1 to 30, m and L are integers of Table 1 or higher, and m + L are integers of Tables 1 to 30. Me is methyl, Bu is butyl.

有聚氧化伸烷基鏈之化合物中,具伸乙基及伸丙基中至少任一的合適化合物有伸乙基或伸丙基之個數在10~30之聚乙二醇、聚丙二醇。Among the compounds having a polyoxyalkylene chain, a suitable compound having at least one of a stretched ethyl group and a stretched propyl group is a polyethylene glycol or a polypropylene glycol having a stretched ethyl group or a stretched propyl group of 10 to 30.

上述有聚氧化伸烷基鏈之化合物可1種單獨使用,亦可併用2種以上。The compound having a polyoxyalkylene chain may be used singly or in combination of two or more.

上述多官能單體有例如,乙二醇二(甲基)丙烯酸酯、伸乙基個數在2~30之聚乙二醇二(甲基)丙烯酸酯(例如二甘醇二(甲基)丙烯酸酯、三甘醇二(甲基)丙烯酸酯、四甘醇二(甲基)丙烯酸酯、聚乙二醇#400二甲基丙烯酸酯、聚乙二醇#600二甲基丙烯酸酯、聚乙二醇#1000二甲基丙烯酸酯等)、丙二醇二(甲基)丙烯酸酯、伸丙基個數在2~18之聚丙二醇二(甲基)丙烯酸酯(例如二丙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、四丙二醇二(甲基)丙烯酸酯、十二丙二醇二(甲基)丙烯酸酯等)、乙二醇鏈/丙二醇鏈至少各有其一之伸烷二醇鏈之二(甲基)丙烯酸酯(例如國際公開第01/98832號小冊所述之化合物等)、聚丁二醇二(甲基)丙烯酸酯等。The above polyfunctional monomer is, for example, ethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate having an ethyl group number of 2 to 30 (for example, diethylene glycol di(methyl)). Acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol #400 dimethacrylate, polyethylene glycol #600 dimethacrylate, poly Glycol #1000 dimethacrylate, etc.), propylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate having a number of propyl groups of 2 to 18 (for example, dipropylene glycol di(methyl)) Acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, etc.), ethylene glycol chain/propylene glycol chain have at least one extension A di(meth)acrylate of an alkanediol chain (for example, a compound described in the pamphlet of International Publication No. 01/98832), polytetramethylene glycol di(meth)acrylate, or the like.

其中由易於取得之觀點,以乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、乙二醇鏈/丙二醇鏈至少各有其一之伸烷二醇鏈之二(甲基)丙烯酸酯為佳。Among them, from the viewpoint of easy availability, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, ethylene glycol chain/propylene glycol chain have at least one of the alkylene glycol chains (A) Acrylate is preferred.

上述有聚氧化伸烷基鏈之化合物於上述聚合性化合物中之含量以40質量%以下為佳,1~30質量%更佳,1~25質量%尤佳。上述含量未達0.1質量%則有時剝離性、顯像幅度之改良效果不彰,超過40質量%則有時解析、密著性、遮覆性等惡化。The content of the compound having a polyoxyalkylene chain in the above polymerizable compound is preferably 40% by mass or less, more preferably 1 to 30% by mass, particularly preferably 1 to 25% by mass. When the content is less than 0.1% by mass, the effect of improving the peeling property and the development width may be insufficient. When the content is more than 40% by mass, the analysis, the adhesion, the covering property, and the like may be deteriorated.

--其它聚合性化合物----Other polymeric compounds --

本發明之圖案形成材料中,上述聚合性化合物以外可用其它聚合性化合物。例如,不飽和羧酸(例如丙烯酸、甲基丙烯酸、依康酸、巴豆酸、異巴豆酸、順丁烯二酸等)與脂肪族多元醇化合物之酯、不飽和羧酸與多元胺化合物之醯胺等。In the pattern forming material of the present invention, other polymerizable compounds may be used in addition to the above polymerizable compound. For example, esters of unsaturated carboxylic acids (such as acrylic acid, methacrylic acid, isaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) with aliphatic polyol compounds, unsaturated carboxylic acids and polyamine compounds Amidoxime and the like.

具體言之,有例如特開2005-258431號公報段落[0273]~[0283]所述之化合物等。Specifically, there are, for example, the compounds described in paragraphs [0273] to [0283] of JP-A-2005-258431.

上述聚合性化合物於上述感光層之含量以例如5~90質量%為佳,15~60質量%更佳,20~50質量%尤佳。上述含量為5質量%則會有遮覆膜強度之降低,超過90質量%則保存時會有邊緣融合(自卷端部之滲出缺失)之惡化。The content of the polymerizable compound in the photosensitive layer is preferably, for example, 5 to 90% by mass, more preferably 15 to 60% by mass, still more preferably 20 to 50% by mass. When the content is 5% by mass, the strength of the coating film is lowered. When the content is more than 90% by mass, the edge fusion (deterioration of the bleeding from the end portion) is deteriorated during storage.

-(C)光聚合引發劑--(C) Photopolymerization Initiator -

上述光聚合引發劑只要具引發上述聚合性化合物之聚合的能力即無特殊限制,可由習知光聚合引發劑中適當選擇,以例如對於紫外線至可見範圍之光線具感光性者為佳,產生光激發雜縮環系或增感劑之某種作用,生成活性自由基之活性劑亦佳,亦可係依單體種類引發陽離子聚合之引發劑。The photopolymerization initiator is not particularly limited as long as it has the ability to initiate polymerization of the above polymerizable compound, and may be appropriately selected from conventional photopolymerization initiators, and is preferably one which is photosensitive to ultraviolet light to a visible range, for example, to generate photoexcited impurities. The action of the condensed ring system or the sensitizer, the active agent which generates the active radical is also good, and the initiator which initiates the cationic polymerization depending on the monomer type.

上述光聚合引發劑以含至少1種在波長約300~800nm範圍內分子吸光係數至少約50之成分為佳,上述波長以330~500nm為更佳。The photopolymerization initiator preferably contains at least one component having a molecular absorption coefficient of at least about 50 in a wavelength range of about 300 to 800 nm, and the wavelength is preferably 330 to 500 nm.

上述光聚合引發劑有例如,鹵化烴衍生物(例如具三骨架者、具二唑骨架者等)、氧化膦、六芳基聯咪唑、肟衍生物、有機過氧化物、硫化合物、酮化合物、醯基氧化膦化合物、芳香族鎓鹽、酮肟醚等。上述肟衍生物以外之光聚合引發劑具體有例如特開2005-258431號公報段落[0288]~[0299]及段落[0305]~[0309]所述之化合物等。The above photopolymerization initiator is, for example, a halogenated hydrocarbon derivative (for example, having three Skeleton A bisazole skeleton or the like), a phosphine oxide, a hexaarylbiimidazole, an anthracene derivative, an organic peroxide, a sulfur compound, a ketone compound, a mercaptophosphine oxide compound, an aromatic onium salt, a ketoxime or the like. Specific examples of the photopolymerization initiator other than the above-described anthracene derivative include the compounds described in paragraphs [0288] to [0299] and paragraphs [0305] to [0309] of JP-A-2005-258431.

上述肟衍生物有例如3-苯甲醯氧亞胺丁-2-酮、3-乙醯氧亞胺丁-2-酮、3-丙醯氧亞胺丁-2-酮、2-乙醯氧亞胺丁-3-酮、2-乙醯氧亞胺-1-苯丙-1-酮、2-苯甲醯氧亞胺-1-苯丙-1-酮、3-(4-甲苯磺醯氧基)亞胺丁-2-酮、2-乙氧羰氧亞胺-1-苯丙-1-酮等。The above anthracene derivatives are, for example, 3-benzylideneoxyiminebutan-2-one, 3-acetoxyiminebutan-2-one, 3-propionoxime-4-butan-2-one, 2-acetamidine Oxyimine butan-3-one, 2-acetoxyimine-1-phenylpropan-1-one, 2-benzylideneimine-1-phenylpropan-1-one, 3-(4-toluene Sulfomethoxy)iminobutan-2-one, 2-ethoxycarbonyloxyimine-1-phenylpropan-1-one, and the like.

上述光聚合引發劑於上述感光層之含量以0.1~30質量%為佳,0.5~20質量%更佳,0.5~15質量%尤佳。The content of the photopolymerization initiator in the photosensitive layer is preferably from 0.1 to 30% by mass, more preferably from 0.5 to 20% by mass, even more preferably from 0.5 to 15% by mass.

-(D)雜縮環系化合物--(D) a heterocyclic ring compound -

上述雜縮環系化合物係為於後敘之感光層的曝光時調整曝光感度、感光波長,或於上述感光層之顯像時提升不使該感光層曝光部分之厚度在該顯像前後起變化之光的最小能量而添加。併用上述雜縮環系化合物即可極容易地調整上述感光層之最小能量(感度)於0.1~20mJ/cm2The above-mentioned hybrid ring-based compound adjusts the exposure sensitivity and the photosensitive wavelength during exposure of the photosensitive layer described later, or enhances the development of the photosensitive layer without causing the thickness of the exposed portion of the photosensitive layer to change before and after the development. Add the minimum energy of the light. The minimum energy (sensitivity) of the photosensitive layer can be adjusted extremely easily by using the above-mentioned hybrid ring-based compound at 0.1 to 20 mJ/cm 2 .

上述雜縮環系化合物係以選用適當之對應於後敘照光機構,可見光、紫外光雷射及可見光雷射者為佳。The above-mentioned hybrid ring-based compound is preferably selected from a light-receiving mechanism, a visible light, an ultraviolet laser, and a visible light laser.

上述雜縮環系化合物因活性能量線成為激發態,與其它物質(例如自由基產生劑、酸產生劑等)相互作用(例如能量轉移、電子轉移等)可產生自由基、酸等之有用基。The above heterocyclic ring compound is in an excited state due to an active energy ray, and interacts with other substances (for example, a radical generator, an acid generator, etc.) (for example, energy transfer, electron transfer, etc.) to generate a useful group of a radical, an acid, or the like. .

而雜縮環系化合物不只能提升感光層之感度,亦具有因光激發引發單體之聚合的光聚合引發劑之功能。The heterocyclic ring compound not only enhances the sensitivity of the photosensitive layer, but also functions as a photopolymerization initiator for initiating polymerization of the monomer by photoexcitation.

上述雜縮環系化合物指,環中有雜元素之多環化合物,上述環中以含氮原子為佳。The above heterocyclic ring compound refers to a polycyclic compound having a hetero element in the ring, and a nitrogen atom is preferred among the above rings.

上述雜縮環系化合物以例如含選自雜縮環系酮化合物、喹啉化合物、吖啶化合物之至少1種為佳。The heterocyclic ring compound is preferably, for example, at least one selected from the group consisting of a heterocyclic ketone compound, a quinoline compound, and an acridine compound.

上述雜縮環系化合物具體有例如吖啶酮、氯吖啶酮、N-甲基吖啶酮、N-丁基吖啶酮、N-丁基氯吖啶酮等吖啶酮化合物;3-(2-苯并呋喃甲醯基)-7-二乙胺香豆素、3-(2-苯并呋喃甲醯基)-7-(1-吡咯啶基)香豆素、3-苯甲醯-7-二乙胺香豆素、3-(2-甲氧苯甲醯基)-7-二乙胺香豆素、3-(4-二甲胺苯甲醯基)-7-二乙胺香豆素、3,3’-羰雙(5,7-二正丙氧香豆素)、3,3’-羰雙(7-二乙胺香豆素)、3-苯甲醯-7-甲氧香豆素、3-(2-呋喃甲醯基)-7-二乙胺香豆素、3-(4-二乙胺桂皮醯基)-7-二乙胺香豆素、7-甲氧-3-(3-吡啶羰基)香豆素、3-苯甲醯-5,7-二丙氧香豆素、7-苯并三唑-2-基香豆素、7-二乙胺-4-甲香豆素,及特開平5-19475號公報、特開平7-271028號公報、特開2002-363206號公報、特開2002-363207號公報、特開2002-363208號公報、特開2002-363209號公報等所述之香豆素化合物等。The above heterocyclic ring compound may specifically be an acridone compound such as acridone, chloroacridone, N-methylacridone, N-butylacridone or N-butylchloroacridone; (2-benzofurancarbenyl)-7-diethylamine coumarin, 3-(2-benzofuranylmethyl)-7-(1-pyrrolidinyl)coumarin, 3-phenyl醯-7-diethylamine coumarin, 3-(2-methoxybenzhydryl)-7-diethylamine coumarin, 3-(4-dimethylamidobenzylidene)-7-di Ethyl coumarin, 3,3'-carbonyl bis(5,7-di-n-propoxycoumarin), 3,3'-carbonyl bis(7-diethylamine coumarin), 3-benzamide -7-methoxycoumarin, 3-(2-furanyl)-7-diethylamine coumarin, 3-(4-diethylamine cinnamate)-7-diethylamine coumarin , 7-methoxy-3-(3-pyridylcarbonyl)coumarin, 3-benzylformamide-5,7-dipropoxycoumarin, 7-benzotriazol-2-ylcoumarin, 7 -Ethylamine-4-methylcoumarin, and Japanese Laid-Open Patent Publication No. Hei. No. 5-19475, Japanese Patent Laid-Open No. Hei 7-271028, JP-A-2002-363206, JP-A-2002-363207, and JP-A-2002-363208 Bulletin Laid-Open coumarin compound of the Publication No. 2002-363209 and the like.

上述喹啉化合物具體有例如,喹啉、9-羥-1,2-二氫喹啉-2-酮、9-乙氧-1,2-二氫喹啉-2-酮、9-二丁胺-1,2-二氫喹啉-2-酮、8-羥喹啉、8-巰喹啉、喹啉-2-甲酸等。The above quinoline compound is specifically, for example, quinoline, 9-hydroxy-1,2-dihydroquinolin-2-one, 9-ethoxy-1,2-dihydroquinolin-2-one, 9-dibutyl Amine-1,2-dihydroquinolin-2-one, 8-hydroxyquinoline, 8-quinoxaline, quinoline-2-carboxylic acid, and the like.

上述吖啶化合物具體有例如,9-苯吖啶、1,7-雙(9,9-吖啶基)庚烷等。Specific examples of the acridine compound include 9-benzopyridinium, 1,7-bis(9,9-acridinyl)heptane and the like.

上述雜縮環系化合物中係以環中含氮元素者為佳。上述環內有氮元素者有上述吖啶化合物、以胺基取代之香豆素化合物、吖啶酮化合物等。其中以吖啶酮化合物為尤佳。Among the above heterocyclic ring compounds, those containing a nitrogen element in the ring are preferred. The nitrogen element in the ring may be the acridine compound, the coumarin compound substituted with an amine group, or an acridone compound. Among them, an acridone compound is particularly preferred.

上述雜縮環系化合物以上述吖啶酮、由胺基取代之香豆素、9-苯吖啶等為更佳,其中以吖啶酮為尤佳。The above heterocyclic ring compound is more preferably the above acridone, an amino group-substituted coumarin, 9-benzo acridine or the like, and an acridone is preferred.

上述光聚合引發劑、上述雜縮環系化合物之組合有例如特開2001-305734號公報所述之電子轉移型引發劑[(1)電子給予型引發劑及增感色素、(2)電子受容型引發劑及增感色素、(3)電子給予型引發劑、增感色素及電子受容型引發劑(三元引發劑)]等組合。The combination of the photopolymerization initiator and the above-mentioned heterocyclic ring compound is, for example, an electron transfer type initiator described in JP-A-2001-305734 [(1) Electron-donating initiator and sensitizing dye, and (2) electron accepting. A combination of a type initiator and a sensitizing dye, (3) an electron donating initiator, a sensitizing dye, and an electron accepting initiator (ternary initiator).

上述雜縮環系化合物於上述感光層之含量以0.05~30質量%為佳,0.1~20質量%更佳,0.2~10質量%尤佳。該含量未達0.05質量%則於活性能量線之感度低,曝光程序耗時,生產力下降,超過30質量%則保存時會有上述雜縮環系化合物自上述感光層析出。The content of the above-mentioned hybrid ring-based compound in the photosensitive layer is preferably 0.05 to 30% by mass, more preferably 0.1 to 20% by mass, and particularly preferably 0.2 to 10% by mass. When the content is less than 0.05% by mass, the sensitivity to the active energy ray is low, the exposure process takes time, and the productivity is lowered. When the content exceeds 30% by mass, the above-mentioned hybrid ring-based compound is chromatographed from the above.

上述雜縮環系化合物之外,必要時可添加其它增感劑。In addition to the above heterocyclic ring compound, other sensitizers may be added as necessary.

-(E)聚合抑制劑-- (E) polymerization inhibitor -

上述聚合抑制劑無特殊限制,可隨目的適當選擇。The above polymerization inhibitor is not particularly limited and may be appropriately selected depending on the purpose.

上述聚合抑制劑之作用係對於經曝光產生自上述光聚合引發劑之光聚合引發自由基成分給予氫(或收受氫),給予能量(或收受能量),給予電子(或收受電子)等,使光聚合引發自由基失活而抑制聚合引發。The polymerization inhibitor is used to impart hydrogen (or receive hydrogen) to a photopolymerization-initiating radical component generated by exposure from the photopolymerization initiator, to impart energy (or receive energy), to give electrons (or to accept electrons), and the like. Photopolymerization initiates the deactivation of free radicals and inhibits polymerization initiation.

上述聚合抑制劑有具孤立電子對之化合物(例如具氧、氮、硫、金屬等之化合物)、具π電子之化合物(例如芳香族化合物)等,具體有具酚式羥基之化合物、具亞胺基之化合物、具硝基之化合物、具亞硝基之化合物、具芳環之化合物、具雜環之化合物、具金屬原子之化合物(含與有機化合物之錯合物)等。這些之中以具酚式羥基之化合物、具亞胺基之化合物、具芳環之化合物、具雜環之化合物為佳。The polymerization inhibitor includes a compound having an isolated electron pair (for example, a compound having oxygen, nitrogen, sulfur, a metal, or the like), a compound having a π electron (for example, an aromatic compound), and the like, and specifically a compound having a phenolic hydroxyl group, and having a compound An amine group compound, a compound having a nitro group, a compound having a nitroso group, a compound having an aromatic ring, a compound having a hetero ring, a compound having a metal atom (containing a complex compound with an organic compound), and the like. Among these, a compound having a phenolic hydroxyl group, a compound having an imine group, a compound having an aromatic ring, and a compound having a hetero ring are preferred.

上述具酚式羥基之化合物無特殊限制,可隨目的適當選擇,以例如具至少2個酚式羥基之化合物為佳。該具至少2個酚式羥基之化合物中,至少2個酚式羥基可於同一芳環取代,亦可於同一分子內之不同芳環取代。The above compound having a phenolic hydroxyl group is not particularly limited and may be appropriately selected depending on the purpose, and for example, a compound having at least two phenolic hydroxyl groups is preferred. In the compound having at least two phenolic hydroxyl groups, at least two phenolic hydroxyl groups may be substituted with the same aromatic ring, or may be substituted with different aromatic rings within the same molecule.

上述具至少2個酚式羥基之化合物以例如下述構造式之化合物為更佳。The above compound having at least two phenolic hydroxyl groups is more preferably a compound of the following structural formula.

上述構造式中Z表取代基,m表2以上之整數。n表0以上之整數。該m及n以選為m+n=6為佳。n係2以上時上述Z可係相同或不同。In the above structural formula, the Z table is substituted, and m is an integer of 2 or more. n Table 0 or more integers. Preferably, m and n are selected to be m+n=6. When n is 2 or more, the above Z may be the same or different.

上述m未達2則解析度會惡化。If the above m is less than 2, the resolution will deteriorate.

上述取代基有例如羧基、磺酸基、氰基、鹵素原子(例如氟原子、氯原子、溴原子)、羥基、碳原子數30以下之烷氧羰基(例如甲氧羰基、乙氧羰基、苯甲氧羰基)、碳原子數30以下之芳氧羰基(例如甲苯氧羰基)、碳原子數30以下之烷碸胺羰基(例如甲碸胺羰基、辛碸胺羰基)、芳碸胺羰基(例如甲苯碸胺羰基)、碳原子數30以下之醯胺碸基(例如苯甲醯胺碸基、乙醯胺碸基、三甲基乙醯胺碸基)、碳原子數30以下之烷氧基(例如甲氧基、乙氧基、苯甲氧基、苯氧乙氧基、乙苯氧基等)、碳原子數30以下之芳硫基、烷硫基(例如苯硫基、甲硫基、乙硫基、十二硫基)、碳原子數30以下之芳氧基(例如苯氧基、對甲苯氧基、1-萘氧基、2-萘氧基)、硝基、碳原子數30以下之烷基、烷氧羰氧基(例如甲氧羰氧基、硬脂氧羰氧基、苯氧乙氧羰氧基)、芳氧羰氧基(例如苯氧羰氧基、氯苯氧羰氧基)、碳原子數30以下之醯氧基(例如乙醯氧基、丙醯氧基等)、碳原子數30以下之醯基(例如乙醯基、丙醯基、苯甲醯基)、胺甲醯基(例如胺甲醯基、N,N-二甲胺甲醯基、啉羰基、哌啶羧基等)、胺碸基(例如N,N-二甲胺碸基、啉碸基、哌吡啶碸基等)、碳原子數30以下之烷碸基(例如甲碸基、三氟甲碸基、乙碸基、丁碸基、十二碸基)、芳碸基(例如苯碸基、甲苯碸基、萘碸基、吡啶碸基、喹啉碸基)、碳原子數30以下之芳基(例如苯基、二氯苯基、甲苯基、甲氧苯基、二乙胺苯基、乙醯胺苯基、甲氧羰苯基、羥苯基、第三辛苯基、萘基等)、取代胺基(例如胺基、烷胺基、二烷胺基、芳胺基、二芳胺基、醯胺基等)、取代偶磷基(例如偶磷基、二乙偶磷基、二苯偶磷基)、雜環基(例如吡啶基、喹啉基、呋喃基、噻吩基、四氫糠基、吡唑基、異唑基、異噻唑基、咪唑基、唑基、噻唑基、嗒基、嘧啶基、吡基、三唑基、四唑基、苯并唑基、苯并嘧唑基、異喹啉基、噻二唑基、啉基、哌啶基、哌基、吲哚基、異吲哚基、硫啉基)、脲基(例如甲脲基、二甲脲基、苯脲基等)、胺磺醯胺基(例如二丙胺磺醯基等)、烷氧羰胺基(例如乙氧羰胺基等)、芳氧羰胺基(例如苯氧羰胺基)、烷膦基(例如甲膦基等)、芳膦基(例如苯膦基等)、矽烷基(例如三甲氧矽烷基、三乙氧矽烷基等)、矽烷氧基(例如三甲矽烷氧基等)等。The above substituent may, for example, be a carboxyl group, a sulfonic acid group, a cyano group, a halogen atom (e.g., a fluorine atom, a chlorine atom or a bromine atom), a hydroxyl group or an alkoxycarbonyl group having a carbon number of 30 or less (e.g., methoxycarbonyl, ethoxycarbonyl, benzene). a methoxycarbonyl group, an aryloxycarbonyl group having 30 or less carbon atoms (for example, toluyloxycarbonyl group), an alkylguanamine carbonyl group having 30 or less carbon atoms (for example, a decylamine carbonyl group or a decylamine carbonyl group), or an arylamine carbonyl group (for example, Tolylamine carbonyl), amidoxime group having 30 or less carbon atoms (for example, benzoguanamine oxime group, acetamimidoxime group, trimethylacetamido fluorenyl group), alkoxy group having 30 or less carbon atoms (e.g., methoxy, ethoxy, benzyloxy, phenoxyethoxy, ethylphenoxy, etc.), an arylthio group having 30 or less carbon atoms, an alkylthio group (e.g., phenylthio, methylthio) , ethylthio group, dodecyl group), aryloxy group having 30 or less carbon atoms (for example, phenoxy group, p-tolyloxy group, 1-naphthyloxy group, 2-naphthyloxy group), nitro group, carbon atom number An alkyl group of 30 or less, an alkoxycarbonyloxy group (e.g., methoxycarbonyloxy group, stearyloxycarbonyloxy group, phenoxyethoxycarbonyloxy group), an aryloxycarbonyloxy group (e.g., phenoxycarbonyloxy group, chlorobenzene) a carbonyloxy group), a decyloxy group having 30 or less carbon atoms (for example, an ethoxylated group or a propyloxy group), and a fluorenyl group having 30 or less carbon atoms (for example, an ethyl group, a propyl group, a benzyl group) ), an amine methyl sulfhydryl group (eg, an amine methyl sulfhydryl group, an N,N-dimethylamine carbhydryl group, Alkyl carbonyl, piperidine carboxy, etc., an amine sulfhydryl group (eg N,N-dimethylamine thiol, a fluorenyl group, a piperidinyl group, etc., an alkyl group having a carbon number of 30 or less (for example, a fluorenyl group, a trifluoromethyl fluorenyl group, an ethyl fluorenyl group, a butyl fluorenyl group, a fluorenyl group), an aryl fluorenyl group (for example, benzene) An aryl group having a carbon number of 30 or less (for example, a phenyl group, a dichlorophenyl group, a tolyl group, a methoxyphenyl group, a diethylamine group), an aryl group having a carbon number of 30 or less or a fluorenyl group, a pyridinium group, a naphthyl group, a pyridinium group, or a quinolinyl group. Phenyl, acetaminophen phenyl, methoxycarbonylphenyl, hydroxyphenyl, trioctylphenyl, naphthyl, etc.), substituted amines (eg, amine, alkylamino, dialkylamino, arylamino) , a diarylamine group, a guanamine group, etc.), a substituted phosphonium group (for example, a phosphorous group, a diethylphosphonyl group, a diphenylphosphonyl group), a heterocyclic group (for example, a pyridyl group, a quinolyl group, a furyl group, Thienyl, tetrahydroindenyl, pyrazolyl, iso Azyl, isothiazolyl, imidazolyl, Azyl, thiazolyl, anthracene Base, pyrimidinyl, pyridyl Base, triazolyl, tetrazolyl, benzo Azyl, benzopyrazole, isoquinolyl, thiadiazolyl, Lolinyl, piperidinyl, piperidine Base, sulfhydryl, isodecyl, sulfur Alkyl), a ureido group (e.g., a methylureido group, a dimethylureido group, a phenylureido group, etc.), an amine sulfonamide group (e.g., a dipropylamine sulfonyl group, etc.), an alkoxycarbonylamine group (e.g., an ethoxycarbonylamine group) And the like, an aryloxycarbonylamino group (for example, phenoxycarbonylamino group), an alkylphosphino group (for example, a methylphosphino group, etc.), an arylphosphino group (for example, a phenylphosphino group, etc.), a decyl group (for example, a trimethoxyalkyl group, a triethyl group) An oxonyl group or the like, a decyloxy group (for example, a trimethyldecyloxy group), or the like.

上述構造式之化合物有例如烷基兒茶酚(例如兒茶酚、間苯二酚、1,4-氫醌、2-甲兒茶酚、3-甲兒茶酚、4-甲兒茶酚、2-乙兒茶酚、3-乙兒茶酚、4-乙兒茶酚、2-丙兒茶酚、3-丙兒茶酚、4-丙兒茶酚、2-正丁兒茶酚、3-正丁兒茶酚、4-正丁兒茶酚、2-第三丁兒茶酚、3-第三丁兒茶酚、4-第三丁兒茶酚、3,5-二(第三丁)兒茶酚等)、烷基間苯二酚(例如2-甲間苯二酚、4-甲間苯二酚、2-乙間苯二酚、4-乙間苯二酚、2-丙間苯二酚、4-丙間苯二酚、2-正丁間苯二酚、4-正丁間苯二酚、2-第三丁間苯二酚、4-第三丁間苯二酚等)、烷基氫醌(例如甲氫醌、乙氫醌、丙氫醌、第三丁氫醌、2,5-二(第三丁)氫醌等)、五倍子酚、根皮三酚等。The compound of the above formula is, for example, an alkylcatechol (for example, catechol, resorcin, 1,4-hydroquinone, 2-methylcatechol, 3-methylcatechol, 4-methylcatechol). , 2-ethylcatechol, 3-ethylcatechol, 4-ethylcatechol, 2-propanol, 3-propychol, 4-propychol, 2-n-butylcatechol , 3-n-butyl catechol, 4-n-butyl catechol, 2-third catechin, 3-third catechol, 4-third catechol, 3,5-di ( Third, catechol, etc.), alkyl resorcinol (eg 2-methyl resorcinol, 4-methylresorcinol, 2-ethylresorcinol, 4-ethylresorcinol, 2-propyl resorcinol, 4-propenyl resorcinol, 2-n-butyl resorcinol, 4-n-butyl resorcinol, 2-third butyl resorcinol, 4-third dibutyl Hydroquinone, etc.), alkylhydroquinone (such as indomethacin, ethylhydroquinone, propylhydroquinone, tributylhydroquinone, 2,5-di(tributyl)hydroquinone, etc.), gallicol, root bark Trisphenol and the like.

上述具酚式羥基之化合物以例如,上述具酚式羥基至少1個之芳環互相由2價連結基連結之化合物為佳。The compound having a phenolic hydroxyl group is preferably a compound in which at least one of the phenolic hydroxyl groups is bonded to each other by a divalent linking group.

上述2價連結基有例如具1~30個碳原子、氧原子、氮原子、硫原子、SO、SO2 等之基。上述硫原子、SO及SO2 亦可直接結合。The divalent linking group may have, for example, a group having 1 to 30 carbon atoms, an oxygen atom, a nitrogen atom, a sulfur atom, SO, SO 2 or the like. The above sulfur atom, SO and SO 2 may be directly bonded.

上述碳原子及氧原子可有取代基,該取代基有例如上述構造式中之Z。The above carbon atom and oxygen atom may have a substituent, and the substituent may have, for example, Z in the above structural formula.

上述芳環可有取代基,該取代基有例如上述構造式中之Z。The above aromatic ring may have a substituent such as Z in the above structural formula.

上述具酚式羥基之化合物的具體例有雙酚A、雙酚S、雙酚M、於感熱紙用作顯色劑之習知雙酚化合物、特開2003-305945號公報所述之雙酚化合物、用作抗氧化劑之受阻酚化合物等。又有具4-甲氧酚、4-甲氧-2-羥二苯基酮、β-萘酚、2,6-二(第三丁基)-4-甲酚、柳酸甲酯、二乙胺酚等取代基之單酚化合物等。Specific examples of the above phenolic hydroxyl group-containing compound include bisphenol A, bisphenol S, bisphenol M, a conventional bisphenol compound used as a color developing agent in a heat sensitive paper, and a bisphenol described in JP-A-2003-305945. A compound, a hindered phenol compound used as an antioxidant, and the like. Also having 4-methoxyphenol, 4-methoxy-2-hydroxydiphenyl ketone, β-naphthol, 2,6-di(t-butyl)-4-cresol, methyl salicylate, two a monophenolic compound such as a substituent such as diethylamine or the like.

上述具酚式羥基之化合物的市售品有本州化學公司製之雙酚化合物。A commercially available product of the above phenolic hydroxyl group-containing compound is a bisphenol compound manufactured by Honshu Chemical Co., Ltd.

上述具亞胺基之化合物無特殊限制,可隨目的適當選擇,以例如分子量50以上者為佳,分子量70以上者更佳。The compound having an imine group is not particularly limited and may be appropriately selected according to the purpose, and is preferably, for example, a molecular weight of 50 or more, and more preferably 70 or more.

上述具亞胺基之化合物以具由亞胺基取代之環狀構造為佳,該環狀構造以縮合有芳環及雜環之至少任一者為佳,芳環縮合者更佳。上述環狀構造亦可具氧原子、氮原子、硫原子。The compound having an imido group is preferably a cyclic structure substituted with an imine group, and the cyclic structure preferably contains at least one of an aromatic ring and a hetero ring, and an aromatic ring condensate is more preferable. The above cyclic structure may have an oxygen atom, a nitrogen atom or a sulfur atom.

上述具亞胺基之化合物的具體例有啡噻、啡、二氫啡、氫醌,或這些化合物由上述構造式(37)中之Z取代之化合物。A specific example of the above compound having an imine group is thiophene ,coffee Dihydromorphine And hydroquinone, or a compound in which these compounds are substituted by Z in the above structural formula (37).

上述由亞胺基取代之具環狀構造之化合物,以部分有受阻胺之受阻胺衍生物為佳。The above-mentioned compound having a cyclic structure substituted with an imine group is preferably a hindered amine derivative partially hindered with an amine.

上述受阻胺有例如特開2003-246138號公報所述之受阻胺。The hindered amine is, for example, a hindered amine described in JP-A-2003-246138.

上述具硝基之化合物或上述具亞硝基之化合物無特殊限制,可隨目的適當選擇,以例如分子量50以上者為佳,分子量70以上者更佳。The compound having a nitro group or the above compound having a nitroso group is not particularly limited, and may be appropriately selected according to the purpose, and is preferably, for example, a molecular weight of 50 or more, and more preferably a molecular weight of 70 or more.

上述具硝基之化合物或上述具亞硝基之化合物的具體例有硝苯、亞硝基化合物與鋁之螯合物等。Specific examples of the above nitro group-containing compound or the above nitroso group-containing compound include a benzene benzene, a nitroso compound, and a chelate compound of aluminum.

上述具芳環之化合物無特殊限制,可隨目的適當選擇,以例如上述芳環由具孤立電子對之取代基(例如具氧原子、氮原子、硫原子之取代基)取代者為佳。The above compound having an aromatic ring is not particularly limited and may be appropriately selected depending on the purpose, and for example, it is preferred that the above aromatic ring is substituted with a substituent having an isolated electron pair (for example, a substituent having an oxygen atom, a nitrogen atom or a sulfur atom).

上述具芳環之化合物的具體例有,上述具酚式羥基之化合物、上述具亞胺基之化合物、部分具苯胺骨架之化合物(例如亞甲藍、結晶紫等)。Specific examples of the compound having an aromatic ring include the compound having a phenolic hydroxyl group, the compound having an imine group, and a compound having an aniline skeleton (for example, methylene blue or crystal violet).

上述具雜環之化合物無特殊限制,可隨目的適當選擇,以例如該雜環有具氮、氧、硫等之孤立電子對之原子者為佳。The above heterocyclic compound is not particularly limited and may be appropriately selected depending on the purpose, and it is preferred that the heterocyclic ring has an atom having an isolated electron pair such as nitrogen, oxygen or sulfur.

上述具雜環之化合物的具體例有吡啶、喹啉等。Specific examples of the above heterocyclic compound include pyridine, quinoline and the like.

上述具金屬原子之化合物無特殊限制,可隨目的適當選擇。The above compound having a metal atom is not particularly limited and may be appropriately selected depending on the purpose.

上述金屬原子只要係與產生自上述聚合引發劑之自由基具親和性之金屬原子即無特殊限制,可隨目的適當選擇,有例如銅、鋁、鈦等。The metal atom is not particularly limited as long as it has affinity with a radical generated from the polymerization initiator, and may be appropriately selected depending on the purpose, and examples thereof include copper, aluminum, and titanium.

上述聚合抑制劑之中,以具酚式羥基至少2個之化合物、具由亞胺基取代之芳環的化合物、具由亞胺基取代之雜環的化合物為佳,亞胺基構成環狀構造之一部分的化合物、受阻胺化合物尤佳。具體言之,以兒茶酚、啡噻、啡、受阻胺或這些之衍生物為佳。Among the above polymerization inhibitors, a compound having at least two phenolic hydroxyl groups, a compound having an aromatic ring substituted with an imine group, and a compound having a heterocyclic ring substituted with an imido group are preferred, and the imine group constitutes a cyclic group. It is especially preferred to construct a compound or a hindered amine compound. Specifically, catechol, thiophene ,coffee A hindered amine or a derivative thereof is preferred.

一般市售聚合性化合物中含有上述聚合抑制劑,本發明中為提升解析度,係使之含市售之上述聚合性化合物中含之聚合抑制劑以外之聚合抑制劑。因此,上述聚合抑制劑為賦予安定性係以市售之上述聚合性化合物中含之4-甲氧酚等單酚系化合物以外之化合物為佳。In general, the polymerization inhibitor is contained in the commercially available polymerizable compound. In the present invention, in order to improve the resolution, a polymerization inhibitor other than the polymerization inhibitor contained in the commercially available polymerizable compound is contained. Therefore, the polymerization inhibitor is preferably a compound other than a monophenol compound such as 4-methoxyphenol which is contained in the above-mentioned polymerizable compound which is commercially available.

而上述聚合抑制劑可於圖案形成材料之製程中,預先添加於感光性樹脂組成物溶液。Further, the polymerization inhibitor may be previously added to the photosensitive resin composition solution in the process of patterning the material.

上述聚合抑制劑之含量係以對於上述感光層之上述聚合性化合物0.005~0.5質量%為佳,0.01~0.4質量%更佳,0.02~0.2質量%尤佳。上述含量未達0.005質量%則解析度會下降,超過0.5質量%則對於活性能量線之感度會下降。The content of the polymerization inhibitor is preferably 0.005 to 0.5% by mass, more preferably 0.01 to 0.4% by mass, even more preferably 0.02 to 0.2% by mass, based on the polymerizable compound of the photosensitive layer. When the content is less than 0.005% by mass, the resolution is lowered, and when it exceeds 0.5% by mass, the sensitivity to the active energy ray is lowered.

上述聚合抑制劑之含量表,為賦予安定性的,市售上述聚合性化合物中所含之4-甲氧酚等單酚系化合物除外之含量。The content list of the above-mentioned polymerization inhibitor is a content excluding a monophenolic compound such as 4-methoxyphenol contained in the above-mentioned polymerizable compound which is imparted with stability.

-(F)顯色劑--(F) developer -

上述顯色劑係為曝光後於上述感光層賦予可見像(印像功能)而添加。The coloring agent is added after the exposure to give a visible image (printing function) to the photosensitive layer.

上述顯色劑有例如特開2005-258431號公報段落[0320]、[0321]所述之化合物等。The above-mentioned color developing agent is, for example, a compound described in paragraphs [0320] and [0321] of JP-A-2005-258431.

上述顯色劑於上述感光層之含量以0.01~20質量%為佳,0.05~10質量%更佳,0.1~5質量%尤佳。上述鹵素化合物於上述感光層之含量以0.001~5質量%為佳,0.005~1質量%更佳。The content of the coloring agent in the photosensitive layer is preferably 0.01 to 20% by mass, more preferably 0.05 to 10% by mass, and particularly preferably 0.1 to 5% by mass. The content of the halogen compound in the photosensitive layer is preferably 0.001 to 5% by mass, more preferably 0.005 to 1% by mass.

-(G)有機溶劑--(G) organic solvent -

上述有機溶劑係為調製感光層形成時之塗液而添加。The organic solvent is added to prepare a coating liquid when the photosensitive layer is formed.

上述有機溶劑於上述感光層之餘留量在0.5質量%以下,0.45質量%以下較佳,0.4質量%以下更佳,0.35質量%以下尤佳。上述餘留量超過0.5質量%則剝離性差,遮覆膜強度低。The remaining amount of the organic solvent in the photosensitive layer is preferably 0.5% by mass or less, more preferably 0.45% by mass or less, more preferably 0.4% by mass or less, and particularly preferably 0.35% by mass or less. When the remaining amount is more than 0.5% by mass, the peeling property is poor and the strength of the coating film is low.

上述有機溶劑係選自酮類、醇類及醚類之至少1種。The organic solvent is at least one selected from the group consisting of ketones, alcohols, and ethers.

上述酮類有例如丙酮、甲基乙基酮、甲基異丁基酮、環己酮、二異丁基酮等。Examples of the ketone include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone and the like.

上述醇類有例如甲醇、乙醇、正丙醇、異丙醇、正丁醇、第二丁醇、正己醇、甲基丙二醇、1-甲氧-2-丙醇等。The above alcohols are, for example, methanol, ethanol, n-propanol, isopropanol, n-butanol, second butanol, n-hexanol, methylpropanediol, 1-methoxy-2-propanol and the like.

上述醚類有四氫呋喃、二乙醚、乙二醇一甲醚、乙二醇一乙醚、丙二醇一甲醚等。The above ethers are tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether and the like.

上述有機溶劑中甲基乙基酮、甲醇、四氫呋喃、丙二醇一甲醚因於感光層形成時餘留量少而較佳。Among the above organic solvents, methyl ethyl ketone, methanol, tetrahydrofuran, and propylene glycol monomethyl ether are preferred because they have a small remaining amount when the photosensitive layer is formed.

這些有機溶劑可1種單獨使用,亦可併用2種以上。並可添加習知界面活性劑。These organic solvents may be used alone or in combination of two or more. A conventional surfactant can be added.

-其它成分--Other ingredients -

上述其它成分有例如染料、還原劑、氫給予體、增感劑、塑化劑、著色劑等,亦可併用往基體表面之密著促進劑及其它助劑類(例如顏料、導電性粒子、填料、消泡劑、難燃劑、平坦化劑、抗氧化劑、香料、熱交聯劑、表面張力調整劑、鏈轉移劑等)。這些成分之適當含有可調整目標之圖案形成材料安定性、重現性、印像性、膜物性等性質。The other components include, for example, a dye, a reducing agent, a hydrogen donor, a sensitizer, a plasticizer, a colorant, etc., and may be used in combination with a adhesion promoter on the surface of the substrate and other auxiliary agents (for example, pigments, conductive particles, Fillers, defoamers, flame retardants, flattening agents, antioxidants, perfumes, thermal crosslinkers, surface tension modifiers, chain transfer agents, etc.). These components suitably contain properties such as stability, reproducibility, printability, and film properties of the pattern forming material of the target.

--染料----dye--

上述染料係為塗敷面狀之檢查時提升可見度等取用性而添加,較佳者為不使上述感光層之塗敷面狀及曝光感度下降者。The dye is added for improving the visibility such as visibility during the inspection of the coated surface, and it is preferable that the coating surface of the photosensitive layer and the exposure sensitivity are not lowered.

上述染料係以吸收波長與顯色劑所致顯色後之吸收波長差異大,對於曝光波長無吸收者為佳。The dye is preferably a difference in absorption wavelength between the absorption wavelength and the color development agent, and is preferably absorptive to the exposure wavelength.

上述染料之吸收波長係以,上述感光層於檢查時可見度優良,呈不刺激作業員之視覺的綠色為佳,故以於500~650nm有最大吸收者為佳。The absorption wavelength of the dye is such that the photosensitive layer is excellent in visibility at the time of inspection, and is preferably green which does not irritate the operator's vision. Therefore, it is preferable to have a maximum absorption at 500 to 650 nm.

上述染料只要該染料0.5質量%之甲基乙基酮溶液於孔徑0.45μm濾材之過濾壓力在0.3MPa以下即無特殊限制,可隨目的適當選擇,以具三芳基甲烷骨架之化合物為佳。上述染料以離子性染料為佳,該離子性染料之抗衡陰離子以例如具芳香族酸、羧酸、磷酸等者為尤佳。The dye is not particularly limited as long as the filtration pressure of the methyl ketone solution of 0.5% by mass of the dye in the pore size of 0.45 μm is 0.3 MPa or less, and may be appropriately selected depending on the purpose, and a compound having a triarylmethane skeleton is preferred. The above dye is preferably an ionic dye, and the counter anion of the ionic dye is preferably, for example, an aromatic acid, a carboxylic acid, a phosphoric acid or the like.

上述芳香族酸有例如萘磺酸、苯磺酸等,其中由溶解度之觀點以萘磺酸為合適。The aromatic acid is, for example, naphthalenesulfonic acid or benzenesulfonic acid, and among them, naphthalenesulfonic acid is suitable from the viewpoint of solubility.

上述具三芳基甲烷骨架之化合物因於有機溶劑之溶解 度優良,上述感光層於塗敷面狀檢查時可見度等取用性優良,不使該感光層塗敷面狀及曝光感度下降的觀點,使用芳基磺酸為佳,萘磺酸化合物尤佳。The above compound having a triarylmethane skeleton is dissolved in an organic solvent The photosensitive layer is excellent in visibility and the like when applied to the surface inspection, and the aryl sulfonic acid is preferably used, and the naphthalenesulfonic acid compound is preferable from the viewpoint that the photosensitive layer is coated in a planar shape and the exposure sensitivity is lowered. .

上述萘磺酸化合物有例如維多利亞純藍NAPS。The above naphthalenesulfonic acid compound is, for example, Victoria Pure Blue NAPS.

<<於有機溶劑之溶解度>><<Solubility in organic solvents>>

上述染料係以該染料0.5質量%之甲基乙基酮溶液於孔徑0.45μm濾材之過濾壓力在0.3MPa以下為佳。該過濾壓力可如下測定。過濾壓力之測定係於室溫、一大氣壓下為之。The dye is preferably a methyl ethyl ketone solution having a 0.5% by mass of the dye and a filtration pressure of 0.3 MPa or less in a pore size of 0.45 μm. This filtration pressure can be determined as follows. The filtration pressure is measured at room temperature under atmospheric pressure.

(1)將染料溶解於甲基乙基酮成0.5質量%溶液。(1) A dye was dissolved in methyl ethyl ketone to form a 0.5% by mass solution.

(2)於注射器(TERUMO公司製,SS-20ESZ;直徑1.5 cm,長度9.5 cm)連接孔徑0.45μm之濾材(ADVANTEC公司製,DISMIC;25HP045AN),介著該濾材過濾充填於注射器內之著色染料0.5質量%之甲基乙基酮溶液。此際過濾速度為50cc/分鐘。(2) A syringe (SS-5ESZ, manufactured by TERUMO Co., Ltd.; 1.5 cm in diameter, 9.5 cm in length) was connected to a filter material having a pore size of 0.45 μm (DISMIC; 25HP045AN, manufactured by ADVANTEC Co., Ltd.), and the filter material was used to filter the coloring dye filled in the syringe. 0.5% by mass of a methyl ethyl ketone solution. The filtration rate here is 50 cc/min.

(3)上述過濾之際,以壓力計測定作用於注射器之壓力,得著色染料0.5質量%甲基乙基酮溶液之過濾壓力。(3) At the time of the above filtration, the pressure applied to the syringe was measured with a pressure gauge to obtain a filtration pressure of a 0.5% by mass methyl ethyl ketone solution of the coloring dye.

上述過濾壓力在0.3MPa以下,則著色染料於有機溶劑之溶解度優良,無感光層塗敷面狀及曝光感度之下降,不易產生未溶解物之殘渣。上述過濾壓力超過0.3MPa則溶解度差,未溶解物造成感光層塗敷面狀缺失,導致曝光感度下降,易有著色染料之殘渣產生。When the filtration pressure is 0.3 MPa or less, the solubility of the coloring dye in an organic solvent is excellent, and the surface of the photosensitive layer is not coated and the sensitivity of exposure is lowered, and the residue of undissolved matter is less likely to be generated. When the filtration pressure exceeds 0.3 MPa, the solubility is poor, and the undissolved matter causes the photosensitive layer to be coated in a planar shape, resulting in a decrease in exposure sensitivity and easy generation of a residue of the coloring dye.

上述染料之含量係以占上述感光層總成分0.001~20質量%為佳,0.03~3質量%更佳,0.05~0.1質量%尤佳。上述含量未達0.001質量%則顯色性低,面狀檢查時缺乏可見度,超過20質量%則顯色劑之顯色會無法確認。The content of the dye is preferably 0.001 to 20% by mass based on the total composition of the photosensitive layer, more preferably 0.03 to 3% by mass, and particularly preferably 0.05 to 0.1% by mass. When the content is less than 0.001% by mass, the color rendering property is low, and the visibility is lacking in the surface inspection, and if it exceeds 20% by mass, the color development of the color developing agent cannot be confirmed.

--還原劑及氫給予體化合物---- reducing agent and hydrogen donor compound --

上述還原劑若可與自由基反應,可抑制上述顯色劑之顯色即無特殊限制,可隨目的適當選擇,有例如對甲氧酚、氫醌、烷基取代氫醌、兒茶酚、烷基取代兒茶酚、啡噻、五倍子酚及1-苯-3-吡唑啉酮等。其中以1-苯-3-吡唑啉酮為佳。If the reducing agent can react with a radical, the color development of the coloring agent can be suppressed without any particular limitation, and can be appropriately selected according to the purpose, such as p-methoxyphenol, hydroquinone, alkyl-substituted hydroquinone, catechol, Alkyl substituted catechol, morphine , gallic phenol and 1-phenyl-3-pyrazolone. Among them, 1-phenyl-3-pyrazolone is preferred.

上述氫給予體化合物無特殊限制,有例如具-SH基之化合物、具-CH2 X-(X=R)基(R表含O、N及S之任一的基)之化合物。The hydrogen donor compound is not particularly limited, and examples thereof include a compound having a -SH group and a compound having a -CH 2 X-(X=R) group (wherein R represents a group of any of O, N and S).

上述具-SH基之化合物有例如下述構造式之化合物。The above compound having a -SH group is, for example, a compound of the following structural formula.

上述具-CH2 X-(X=R)基之化合物有例如N-苯基胺乙酸、二甲胺桂皮酸、二甲胺苯甲醛等。The above compound having a -CH 2 X-(X=R) group is, for example, N-phenylamine acetic acid, dimethylamine cinnamic acid, dimethylamine benzaldehyde or the like.

這些氫給予體化合物中,由如同上述還原劑之觀點係以N-苯基胺乙酸為佳。Among these hydrogen donor compounds, N-phenylaminoacetic acid is preferred from the viewpoint of the above-mentioned reducing agent.

--增感劑----sensitizer --

上述增感劑可依後敘作為照光機構之可見光、紫外光.可見光雷射等予以適當選擇。The above sensitizer can be used as the visible light and ultraviolet light of the illumination mechanism. The visible light laser or the like is appropriately selected.

上述增感劑因活性能量線成為激發態,與其它物質(例如自由基產生劑、酸產生劑)相互作用(例如能量轉移、電子轉移等),可產生自由基、酸等有用基。The sensitizer is activated by an active energy ray and interacts with other substances (for example, a radical generator or an acid generator) (for example, energy transfer, electron transfer, etc.) to generate a useful group such as a radical or an acid.

上述增感劑無特殊限制,可適當選自習知增感劑,有例如特開2005-258431號公報段落[0313]、[0314]所述之化合物等。The sensitizer is not particularly limited, and may be appropriately selected from conventional sensitizers, and examples thereof include compounds described in paragraphs [0313] and [0314] of JP-A-2005-258431.

上述增感劑於上述感光層之含量以0.05~30質量%為佳,0.1~20質量%更佳,0.2~10質量%尤佳。The content of the sensitizer in the photosensitive layer is preferably 0.05 to 30% by mass, more preferably 0.1 to 20% by mass, and particularly preferably 0.2 to 10% by mass.

上述含量未達0.05質量%則於活性能量線之感度低,曝光程序耗時,生產力會下降,超過30質量%則保存時自上述感光層析出。When the content is less than 0.05% by mass, the sensitivity to the active energy ray is low, and the exposure process takes time, the productivity is lowered, and when it exceeds 30% by mass, it is eluted from the above-mentioned photosensitive layer during storage.

--塑化劑----Plasticizer--

上述塑化劑可為控制上述感光層之膜物性(撓性)而添加。The plasticizer may be added to control the film properties (flexibility) of the photosensitive layer.

上述塑化劑有例如特開2005-258431號公報段落[0318]所述之化合物等。The plasticizing agent is, for example, a compound described in paragraph [0318] of JP-A-2005-258431.

上述塑化劑於上述感光層之含量以0.1~50質量%為佳,0.5~40質量%更佳,1~30質量%尤佳。The content of the plasticizer in the photosensitive layer is preferably from 0.1 to 50% by mass, more preferably from 0.5 to 40% by mass, even more preferably from 1 to 30% by mass.

--著色劑----Colorant--

上述著色劑無特殊限制,可隨目的適當選擇,有例如紅色、綠色、藍色、黃色、紫色、洋紅色、青色、黑色等習知顏料或染料,具體有維多利亞純藍BO(C.I.42595)、奧拉明(C.I.41000)、平黑HB(C.I.26150)、莫諾賴特黃GT(C.I.顏料黃12)、永久黃GR(C.I.顏料黃17)、永久黃HR(C.I.顏料黃83)、永久洋紅FBB(C.I.顏料紅146)、賀司特巴姆紅ESB(C.I.顏料紫19)、永久寶石紅FBH(C.I.顏料紅11)、法斯特爾粉紅B司普拉(C.I.顏料紅81)、莫納斯特拉爾堅牢藍(C.I.顏料藍15)、莫諾賴特堅牢黑B(C.I.顏料黑1)、碳黑。The coloring agent is not particularly limited and may be appropriately selected according to the purpose, and there are conventional pigments or dyes such as red, green, blue, yellow, purple, magenta, cyan, black, etc., specifically Victoria Pure Blue BO (CI42595), Olamine (CI41000), Ping Black HB (CI26150), Mono Wright Yellow GT (CI Pigment Yellow 12), Permanent Yellow GR (CI Pigment Yellow 17), Permanent Yellow HR (CI Pigment Yellow 83), permanent Magenta FBB (CI Pigment Red 146), Christboom Red ESB (CI Pigment Violet 19), Permanent Ruby Red FBH (CI Pigment Red 11), Fastel Pink B Spira (CI Pigment Red 81), Monastral Strong Blue (CI Pigment Blue 15), Mono Wright Strong Black B (CI Pigment Black 1), carbon black.

適於製作濾色片之上述著色劑有例如C.I.顏料紅97、C.I.顏料紅122、C.I.顏料紅149、C.I.顏料紅168、C.I.顏料紅177、C.I.顏料紅180、C.I.顏料紅192、C.I.顏料紅215、C.I.顏料綠7、C.I.顏料綠36、C.I.顏料藍15:1、C.I.顏料藍15:4、C.I.顏料藍15:6、C.I.顏料藍22、C.I.顏料藍60、C.I.顏料藍64、C.I.顏料黃139、C.I.顏料黃83、C.I.顏料紫23、特開2002-162752號公報(0138)~(0141)所述者等。上述著色劑之平均粒徑無特殊限制,可隨目的適當選擇,以例如5 μ m以下為佳,1 μ m以下更佳。製作濾色片時上述平均粒徑以0.5 μ m以下為佳。The above colorants suitable for producing color filters are, for example, CI Pigment Red 97, CI Pigment Red 122, CI Pigment Red 149, CI Pigment Red 168, CI Pigment Red 177, CI Pigment Red 180, CI Pigment Red 192, CI Pigment Red. 215, CI Pigment Green 7, CI Pigment Green 36, CI Pigment Blue 15:1, CI Pigment Blue 15:4, CI Pigment Blue 15:6, CI Pigment Blue 22, CI Pigment Blue 60, CI Pigment Blue 64, CI Pigment Yellow 139, CI Pigment Yellow 83, CI Pigment Violet 23, and JP-A-2002-162752 (0138) to (0141). The average particle diameter of the above coloring agent is not particularly limited and may be appropriately selected depending on the purpose, and is preferably, for example, 5 μm or less, more preferably 1 μm or less. When the color filter is produced, the above average particle diameter is preferably 0.5 μm or less.

--密著促進劑---- adhesion promoter --

為提升各層間之密著性或圖案形成材料與基體之密著性,可於各層使用習知所謂密著促進劑。In order to improve the adhesion between the layers or the adhesion of the pattern forming material to the substrate, a conventional so-called adhesion promoter may be used for each layer.

上述密著促進劑有例如特開2005-258431號公報段落[0326]所述之化合物等。The adhesion promoter is, for example, a compound described in paragraph [0326] of JP-A-2005-258431.

上述密著促進劑於上述感光層之含量以0.001~20質量%為佳,0.01~10質量%更佳,0.1~5質量%尤佳。The content of the adhesion promoter in the photosensitive layer is preferably 0.001 to 20% by mass, more preferably 0.01 to 10% by mass, still more preferably 0.1 to 5% by mass.

上述感光層亦可含例如J.科薩著「光敏感系統」第5章所述之有機硫化合物、過氧化物、氧化還原系化合物、偶氮或重氣化合物、光還原性色素、有機鹵素化合物等。The photosensitive layer may also contain, for example, an organic sulfur compound, a peroxide, a redox compound, an azo or a heavy gas compound, a photoreducible pigment, or an organic halogen described in Chapter 5 of "Light Sensitive System" by J. Kosa. Compounds, etc.

具體有例如特開2005-258431號公報段落[0329]~[0333]所述之化合物等。Specifically, for example, the compound described in paragraphs [0329] to [0333] of JP-A-2005-258431.

--界面活性劑----Interactive surfactant --

為改善發生於製造本發明之圖案形成材料時之面狀不勻,可併用習知界面活性劑。上述界面活性劑可適當選自例如陰離子系界面活性劑、陽離子系界面活性劑、非離子系界面活性劑、兩性界面活性劑、含氟界面活性劑等。In order to improve the unevenness of the surface which occurs in the production of the pattern forming material of the present invention, a conventional surfactant may be used in combination. The surfactant may be appropriately selected, for example, from an anionic surfactant, a cationic surfactant, a nonionic surfactant, an amphoteric surfactant, a fluorine-containing surfactant, or the like.

上述界面活性劑於上述感光層之含量以0.001~10質量%為佳,上述含量未達0.001質量%則會不得面狀改良效果,超過10質量%則會有密著性下降。The content of the surfactant in the photosensitive layer is preferably 0.001 to 10% by mass, and if the content is less than 0.001% by mass, the surface-improving effect is not obtained, and when it exceeds 10% by mass, the adhesion is lowered.

上述感光層之厚度無特殊限制,可隨目的適當選擇,以例如1~100 μ m為佳,2~50 μ m更佳,4~30 μ m尤佳。The thickness of the photosensitive layer is not particularly limited and may be appropriately selected depending on the purpose, and is preferably, for example, 1 to 100 μm, more preferably 2 to 50 μm, and particularly preferably 4 to 30 μm.

<支持體及保護膜><Support and Protective Film>

上述支持體無特殊限制,可隨目的適當選擇,以可剝離上述感光層,且透光性良好者為佳,表面平滑性良好則更佳。The support is not particularly limited, and may be appropriately selected depending on the purpose, so that the photosensitive layer can be peeled off, and the light transmittance is good, and the surface smoothness is better.

具體有例如特開2005-258431號公報段落[0342]~[0348]所述之樣態等。Specifically, for example, the aspect described in paragraphs [0342] to [0348] of JP-A-2005-258431.

<其它層><Other layers>

上述其它層無特殊限制,可隨目的適當選擇,有例如緩衝層、阻障層、剝離層、接著層、光吸收層、表面保護層等。上述圖案形成材料可有這些層之單獨1種,亦可有2種以上,並可有同種層2層以上。The other layers described above are not particularly limited and may be appropriately selected depending on the purpose, such as a buffer layer, a barrier layer, a release layer, an adhesive layer, a light absorbing layer, a surface protective layer, and the like. The pattern forming material may be one type of these layers, or two or more of these layers, and may have two or more layers of the same layer.

上述本發明之圖案形成材料之上述感光層係以用通過具有非球面之微透鏡排列成的微透鏡陣列之光曝光為佳,該非球面可校正,由具n個收受來自照光機構之光並予射出的像素部之光調制機構將上述來自照光機構之光調制後,上述像素部之射出面的變形所致之像差。上述照光機構、上述像素部、上述光調制機構、上述非球面、上述微透鏡及上述微透鏡陣列之詳細如後敘。Preferably, the photosensitive layer of the pattern forming material of the present invention is exposed to light by a microlens array arranged by a microlens having an aspherical surface, the aspherical surface being calibratable, and having n light receiving light from the illumination mechanism The light modulating means of the emitted pixel portion modulates the aberration caused by the deformation of the emitting surface of the pixel portion after the light from the illuminating means is modulated. The details of the illumination unit, the pixel portion, the light modulation mechanism, the aspheric surface, the microlens, and the microlens array will be described later.

[圖案形成材料之製法][Method of making pattern forming material]

上述圖案形成材料可如下製造。The above pattern forming material can be produced as follows.

首先,含於上述感光層及其它層之材料,將之溶解、乳化或分散於水或有機溶劑,調製塗液。First, the material contained in the photosensitive layer and other layers is dissolved, emulsified or dispersed in water or an organic solvent to prepare a coating liquid.

上述有機溶劑乃如本發明之圖案形成材料的說明中所述。The above organic solvent is as described in the description of the pattern forming material of the present invention.

其次將上述塗液塗於上述支持體上,乾燥形成各層,可製造圖案形成材料。例如將上述感光層之成分溶解、乳化或分散成感光性樹脂組成物溶液塗於支持體上,乾燥形成感光層,於其上形成保護膜,可製造圖案形成材料。Next, the coating liquid is applied onto the support and dried to form each layer, whereby a pattern forming material can be produced. For example, a component of the photosensitive layer is dissolved, emulsified or dispersed to form a photosensitive resin composition solution, which is applied onto a support, dried to form a photosensitive layer, and a protective film is formed thereon to form a pattern forming material.

上述塗液之塗敷方法無特殊限制,可隨目的適當選擇,有例如噴霧法、輥塗法、旋塗法、隙塗法、押出塗敷法、幕塗法、模塗法、凹輥塗法、線棒塗法、刀塗法等各種方法。The coating method of the above coating liquid is not particularly limited and may be appropriately selected depending on the purpose, such as a spray method, a roll coating method, a spin coating method, a gap coating method, an extrusion coating method, a curtain coating method, a die coating method, and a concave roller coating method. Various methods such as method, wire bar coating, and knife coating.

上述乾燥之條件隨各成分、溶劑種類、使用比率等而異,通常係60~110℃之溫度下30秒~15分鐘左右。The drying conditions vary depending on the components, the solvent type, the use ratio, and the like, and are usually about 30 seconds to 15 minutes at a temperature of 60 to 110 °C.

本發明之圖案形成材料因面狀缺失少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,適用於各種圖案之形成,電路圖案等永久圖案之形成,濾色片、柱材、肋材、間隔物、間壁等液晶構件之製造,全相圖、微機械、驗電板等之圖案形成等,尤適用於高度精細之電路圖案的形成。並適用於本發明之圖案形成方法及圖案形成裝置。The pattern forming material of the present invention has less surface loss, prevents light leakage caused by the color developing agent, has less cracking of the unexposed film, has high resolution, has high strength of the covering film, and has good peelability after pattern formation, and is suitable for various types. Formation of patterns, formation of permanent patterns such as circuit patterns, manufacture of liquid crystal members such as color filters, pillars, ribs, spacers, and partition walls, pattern formation of full-phase diagrams, micromachines, electroscopes, etc. Suitable for the formation of highly detailed circuit patterns. It is also applicable to the pattern forming method and pattern forming apparatus of the present invention.

(圖案形成裝置及圖案形成方法)(pattern forming device and pattern forming method)

本發明之圖案形成裝置備有本發明之圖案形成材料,至少具有照光機構及光調制機構。The pattern forming apparatus of the present invention is provided with the pattern forming material of the present invention, and has at least an illumination mechanism and a light modulation mechanism.

本發明之圖案形成方法至少含曝光步驟,並含適當選擇之其它步驟。The pattern forming method of the present invention contains at least an exposure step and contains other steps as appropriate.

本發明之上述圖案形成裝置由本發明之上述圖案形成方法的說明可以得知。The above-described pattern forming apparatus of the present invention can be known from the description of the above-described pattern forming method of the present invention.

[曝光步驟][Exposure step]

上述曝光步驟係對於本發明之圖案形成材料的感光層進行曝光之步驟。本發明之上述圖案形成材料如上述。The above exposure step is a step of exposing the photosensitive layer of the pattern forming material of the present invention. The above pattern forming material of the present invention is as described above.

上述曝光之對象只要是上述圖案形成材料之感光層即無特殊限制,可隨目的適當選擇,以例如基體上形成有上述圖案形成材料之積層體為佳。The object to be exposed is not particularly limited as long as it is a photosensitive layer of the pattern forming material, and may be appropriately selected depending on the purpose, and for example, a laminate having the pattern forming material formed on the substrate is preferably used.

上述基體無特殊限制,可自習知材料中之表面平滑度高者至具凹凸表面者適當選擇,以板狀基體(基板)為佳,具體有習知印刷電路板形成用基板(例如銅面積層板)、玻璃板(例如鈉玻璃板)、合成樹脂膜、紙、金屬板等,其中因與含銅材料之密著性優良,係以上述銅面積層板為佳。The substrate is not particularly limited, and may be appropriately selected from those having a high surface smoothness in a known material to a concave-convex surface, preferably a plate-shaped substrate (substrate), specifically a substrate for forming a printed circuit board (for example, a copper-area layer). A plate, a glass plate (for example, a soda glass plate), a synthetic resin film, paper, a metal plate, or the like, and the copper layer is preferably used because of its excellent adhesion to the copper-containing material.

上述積層體之形成方法無特殊限制,可隨目的適當選擇,以於上述基體上進行上述圖案形成材料之加熱及加壓之至少任一,一邊層積為佳。The method for forming the laminate is not particularly limited, and may be appropriately selected depending on the purpose, and at least one of heating and pressurization of the pattern forming material may be performed on the substrate.

上述加熱溫度無特殊限制,可隨目的適當選擇,以例如15~180℃為佳,60~140℃更佳。The above heating temperature is not particularly limited and may be appropriately selected depending on the purpose, and is preferably, for example, 15 to 180 ° C, more preferably 60 to 140 ° C.

上述加壓之壓力無特殊限制,可隨目的適當選擇,以例如0.1~1.0MPa為佳,0.2~0.8MPa更佳。The pressure of the above pressurization is not particularly limited and may be appropriately selected depending on the purpose, and is preferably, for example, 0.1 to 1.0 MPa, more preferably 0.2 to 0.8 MPa.

進行上述加熱及加壓之至少任一的裝置無特殊限制,可隨目的適當選擇,有例如層積機(例如大成層積機公司製,VP-II)等。The apparatus for performing at least one of the above-described heating and pressurization is not particularly limited, and may be appropriately selected depending on the purpose, and may be, for example, a laminating machine (for example, VP-II manufactured by Dai Seiki Co., Ltd.).

上述曝光無特殊限制,可隨目的適當選擇,有數位曝光、類比曝光等,以數位曝光為佳。The above exposure is not limited, and may be appropriately selected according to the purpose, such as digital exposure, analog exposure, etc., preferably with digital exposure.

上述數位曝光無特殊限制,可隨目的適當選擇,以例如基於形成之圖案形成資訊生成控制信號,使用依該控制信號調制之光進行為佳。The above-described digital exposure is not particularly limited, and may be appropriately selected depending on the purpose, for example, based on the formed pattern forming information generation control signal, and it is preferable to use light modulated according to the control signal.

上述數位曝光機構無特殊限制,可隨目的適當選擇,有例如照光之照光機構,基於形成之圖案形成資訊將照射自該照光機構之光調制之光調制機構等。The above-described digital exposure mechanism is not particularly limited, and may be appropriately selected depending on the purpose, such as an illumination mechanism such as illumination, a light modulation mechanism that illuminates light modulated from the illumination mechanism based on the formed pattern formation information.

<光調制機構><Light Modulation Mechanism>

上述光調制機構只要可將光調制即無特殊限制,可隨目的適當選擇,以例如具n個像素部為佳。The light modulating means is not particularly limited as long as it can modulate light, and may be appropriately selected depending on the purpose, and for example, it is preferable to have n pixel portions.

上述具n個像素部之光調制機構無特殊限制,可隨目的適當選擇,以例如空間光調制元件為佳。The light modulating mechanism having n pixel portions described above is not particularly limited and may be appropriately selected depending on the purpose, and is preferably a spatial light modulating element, for example.

上述空間光調制元件有例如數位微鏡裝置(DMD)、MEMS(Micro Electro Mechanical Systems)型空間光調制元件(SLM:Space Light Modulator)、藉光電效應調制透過光之光學元件(PLZT元件)、液晶光柵(FLC)等,其中以DMD為合適。The spatial light modulation element includes, for example, a digital micromirror device (DMD), a MEMS (Micro Electro Mechanical Systems) type spatial light modulation element (SLM: Space Light Modulator), an optical element (PLZT element) that modulates transmitted light by a photoelectric effect, and a liquid crystal. Grating (FLC), etc., where DMD is suitable.

上述光調制機構係以具有基於形成之圖案形成資訊生成控制信號之圖案信號生成構構為佳。此時,上述光調制機構依上述圖案信號生成構構所生成之控制信號將光調制。The light modulating mechanism is preferably configured to have a pattern signal having a pattern forming information generation control signal based on the formed pattern. In this case, the light modulating means modulates the light by the control signal generated by the pattern signal generation configuration.

上述控制信號無特殊限制,可隨目的適當選擇,有例如數位信號。The above control signal is not particularly limited and may be appropriately selected depending on the purpose, such as a digital signal.

上述光調制機構及含上述光調制機構之圖案形成裝置有例如特開2005-258431號公報段落[0016]~[0047]所述之機構等。The light modulating mechanism and the pattern forming apparatus including the light modulating mechanism include, for example, the mechanism described in paragraphs [0016] to [0047] of JP-A-2005-258431.

<照光機構><Lighting mechanism>

上述照光機構無特殊限制,可隨目的適當選擇,有例如(超)高壓水銀燈、氙燈、碳弧燈、鹵素燈、影印機用等之螢光管、半導體雷射等習知光源或可將2以上之光合併照射之機構,其中以可將2以上之光合併照射之機構為佳。The above-mentioned illumination mechanism is not particularly limited and may be appropriately selected according to the purpose, and may be a conventional light source such as a (ultra) high pressure mercury lamp, a xenon lamp, a carbon arc lamp, a halogen lamp, a photocopier, or the like, or a semiconductor light source or the like. The above-mentioned light combined illumination means, wherein a mechanism capable of combining two or more lights is preferred.

照射自上述照光機構之光有例如,在介著支持體進行照光時,透過該支持體並將所用之光聚合引發劑、增感劑活化之電磁波、紫外線至可見光、電子束、X線、雷射光等,其中以雷射光為佳,將2以上之光合併之雷射(以下或稱「合波雷射」)更佳。剝離支持體而進行照光時亦可用同樣之光。The light irradiated from the above-mentioned illuminating means is, for example, an electromagnetic wave that transmits the photopolymerization initiator, the sensitizer, and the ultraviolet ray to visible light, electron beam, X-ray, and thunder when the support is irradiated through the support. In the case of light, etc., it is preferable to use laser light, and a laser combining two or more lights (hereinafter referred to as "combined laser") is preferable. The same light can be used when the support is peeled off and the illumination is performed.

上述紫外線至可見光波長以例如300~1,500nm為佳,320~800nm更佳,330~650nm尤佳。The ultraviolet to visible light wavelength is preferably, for example, 300 to 1,500 nm, more preferably 320 to 800 nm, and particularly preferably 330 to 650 nm.

上述雷射光之波長以例如200~1,500nm為佳,300~800nm更佳,330~500nm又更佳,400~450nm尤佳。The wavelength of the above-mentioned laser light is preferably, for example, 200 to 1,500 nm, more preferably 300 to 800 nm, more preferably 330 to 500 nm, and particularly preferably 400 to 450 nm.

上述可照射合波雷射之機構以例如具有複數之雷射、多模光纖及將照射自該複數之雷射的雷射光聚光合併於上述多模光纖之集合光學系的機構為佳。The above-described mechanism capable of illuminating the combined laser beam is preferably a mechanism having, for example, a plurality of laser beams, a multimode optical fiber, and concentrating laser light irradiated from the complex laser light into the collective optical system of the multimode optical fiber.

上述可照射合波雷射之機構(光纖陣列光源)有例如特開2005-316431號公報段落[0130]~[0177]所述者等。The above-described mechanism for illuminating the combined laser beam (fiber array light source) is, for example, described in paragraphs [0130] to [0177] of JP-A-2005-316431.

<微透鏡陣列><Microlens array>

上述曝光係以使上述經調制之光通過微透鏡陣列而進行為佳,亦可更通過孔徑陣列、成像光學系統等進行。The exposure is preferably performed by passing the modulated light through the microlens array, or by an aperture array, an imaging optical system, or the like.

上述微透鏡陣列無特殊限制,可隨目的適當選擇,有例如具有可校正上述像素部之射出面變形所致之像差的非球面之微透鏡排列而成者。The microlens array is not particularly limited, and may be appropriately selected depending on the purpose, and may be, for example, an aspherical microlens array having an aberration that corrects aberration of the exit surface of the pixel portion.

上述非球面無特殊限制,可隨目的適當選擇,以例如複曲面為佳。The above aspherical surface is not particularly limited and may be appropriately selected depending on the purpose, and for example, a toric surface is preferred.

上述微透鏡陣列、上述孔徑陣列及上述成像光學系統等有例如特開2005-258431號公報段落[0051]~[0063]、段落[0065]、段落[0070]~[0073]及段落[0083]~[0088]所述之機構等。The microlens array, the aperture array, the imaging optical system, and the like, for example, paragraphs [0051] to [0063], paragraph [0065], paragraphs [0070] to [0073], and paragraph [0083] of JP-A-2005-258431 ~[0088] The mechanism described above.

<其它光學系統><Other optical systems>

本發明之圖案形成方法可併用適當選自習知光學系統之其它光學系統,有例如1對之組合透鏡構成之光量分布校正光學系統等。The pattern forming method of the present invention may be used in combination with other optical systems suitably selected from conventional optical systems, such as a light quantity distribution correcting optical system composed of a pair of combined lenses, and the like.

上述光量分布校正光學系統變化各射出位置之光束寬度,使周邊部之光束寬度對於接近光軸之中心部的光束寬度之比在射出側小於入射側,自照光機構以平行光束照射DMD時,校正以使被照射面之光量分布約略均勻。The light amount distribution correction optical system changes the beam width at each of the emission positions so that the ratio of the beam width of the peripheral portion to the beam width near the central portion of the optical axis is smaller than the incident side on the emission side, and the self-illumination mechanism illuminates the DMD with the parallel beam to correct So that the light quantity distribution of the illuminated surface is approximately uniform.

上述光量分布校正光學系統具體有例如特開2005-258431號公報段落[0090]~[0105]所述之機構等。The light amount distribution correction optical system is specifically a mechanism described in, for example, paragraphs [0090] to [0105] of JP-A-2005-258431.

[其它步驟][other steps]

上述其它步驟無特殊限制,有適當選自習知圖案形成步驟中者,例如顯像步驟、蝕刻步驟、鍍敷步驟等。這些可1種單獨使用,亦可併用2種以上。The other steps described above are not particularly limited, and may be appropriately selected from conventional pattern forming steps such as a developing step, an etching step, a plating step, and the like. These may be used alone or in combination of two or more.

上述顯像步驟係,由上述曝光步驟將上述圖案形成材料之感光層曝光,使該感光層之經曝光區域硬化後去除未硬化區域以顯像,形成圖案之步驟。The developing step is a step of exposing the photosensitive layer of the pattern forming material by the exposure step, curing the exposed region of the photosensitive layer, and removing the uncured region to develop a pattern.

上述顯像步驟可例如以顯像機構適當實施。The above development step can be suitably carried out, for example, with a developing mechanism.

上述顯像機構只要可用顯像液顯像即無特殊限制,可隨目的適當選擇,有例如將上述顯像液噴霧之機構、將上述顯像液塗敷之機構、以上述顯像液浸泡之機構等。這些可1種單獨使用,亦可併用2種以上。The developing mechanism may be appropriately selected depending on the purpose as long as it can be developed by using a developing liquid, and may be, for example, a mechanism for spraying the developing liquid, a mechanism for applying the developing liquid, and soaking the developing liquid. Institutions, etc. These may be used alone or in combination of two or more.

上述顯像機構亦可具有更換上述顯像液之顯像液更換機構,供給上述顯像液之顯像液供給機構等。The developing mechanism may include a developing liquid replacing mechanism for replacing the developing liquid, a developing liquid supply mechanism for supplying the developing liquid, and the like.

上述顯像液無特殊限制,可隨目的適當選擇,有例如鹼性液、水系顯像液、有機溶劑等,其中以弱鹼性水溶液為佳。該弱鹼性液之鹼成分有例如氫氧化鋰、氫氧化鈉、碳酸鋰、碳酸氫鉀、磷酸鈉、磷酸鉀、焦磷酸鈉、焦磷酸鉀、硼砂等。The above-mentioned developing liquid is not particularly limited and may be appropriately selected depending on the purpose, and examples thereof include an alkaline liquid, a water-based developing liquid, and an organic solvent. Among them, a weakly alkaline aqueous solution is preferred. The alkali component of the weakly alkaline liquid is, for example, lithium hydroxide, sodium hydroxide, lithium carbonate, potassium hydrogencarbonate, sodium phosphate, potassium phosphate, sodium pyrophosphate, potassium pyrophosphate, borax or the like.

上述弱鹼性水溶液之pH以例如約8~12為佳,約9~11更佳。上述弱鹼性水溶液有例如0.1~5質量%之碳酸鈉水溶液或碳酸鉀水溶液等。The pH of the above weakly alkaline aqueous solution is preferably, for example, about 8 to 12, more preferably about 9 to 11. The weakly alkaline aqueous solution is, for example, a 0.1 to 5% by mass aqueous solution of sodium carbonate or an aqueous solution of potassium carbonate.

上述顯像液之溫度可依上述感光層之顯像性適當選擇,以例如約25~40℃為佳。The temperature of the above developing solution can be appropriately selected depending on the developability of the photosensitive layer, and is preferably, for example, about 25 to 40 °C.

上述顯像液可與界面活性劑、消泡劑、有機鹼(例如乙二胺、乙醇胺、氫氧化四甲銨、二乙三胺、三乙五胺、啉、三乙醇胺等)、用以促進顯像之有機溶劑(例如醇類、酮類、酯類、醚類、醯胺類、內酯類)等併用。上述顯像液可係水或鹼水溶液與有機溶劑之混合水系顯像液,亦可係有機溶劑單獨。The above developing solution can be combined with a surfactant, an antifoaming agent, an organic base (for example, ethylenediamine, ethanolamine, tetramethylammonium hydroxide, diethylenetriamine, triethylenepentamine, An organic solvent (for example, an alcohol, a ketone, an ester, an ether, a guanamine, a lactone) or the like for promoting development is used in combination. The above developing solution may be a mixed water-based developing solution of water or an aqueous alkali solution and an organic solvent, or may be an organic solvent alone.

上述蝕刻步驟可適當選取習知蝕刻處理方法為之。用於上述蝕刻處理之蝕刻液無特殊限制,可隨目的適當選擇,有例如以銅形成上述金屬層時之氯化銅溶液、氯化鐵溶液、鹼蝕刻液、過氧化氫系蝕刻液等,其中基於蝕刻因子以氯化鐵溶液為佳。The above etching step can be appropriately selected from a conventional etching treatment method. The etching liquid used for the above etching treatment is not particularly limited, and may be appropriately selected depending on the purpose, such as a copper chloride solution, a ferric chloride solution, an alkali etching solution, a hydrogen peroxide-based etching liquid, etc. when the metal layer is formed of copper. Among them, a ferric chloride solution is preferred based on the etching factor.

經上述蝕刻步驟作蝕刻處理後去除上述圖案,即可於上述基體表面形成永久圖案。After the etching process is performed by the etching step to remove the pattern, a permanent pattern can be formed on the surface of the substrate.

上述永久圖案無特殊限制,可隨目的適當選擇,有例如電路圖案等。The above permanent pattern is not particularly limited and may be appropriately selected depending on the purpose, such as a circuit pattern or the like.

上述鍍敷步驟可適當選取習知鍍敷處理方法為之。The above plating step can appropriately select a conventional plating treatment method.

上述鍍敷處理有例如硫酸銅鍍敷、焦磷酸銅鍍敷等銅鍍敷,高流動焊料鍍敷等焊料鍍敷,瓦特浴(硫酸鎳-氯化鎳)鍍敷,胺磺酸鎳等鎳鍍敷,硬金鍍敷,軟金鍍敷等。The plating treatment includes, for example, copper plating such as copper sulfate plating or copper pyrophosphate plating, solder plating such as high-flow solder plating, Watt bath (nickel sulfate-nickel chloride) plating, nickel such as nickel sulfonate. Plating, hard gold plating, soft gold plating, etc.

經上述鍍敷步驟作鍍敷處理後去除上述圖案,並於必要時蝕刻去除不必要部分,即可於上述基體表面形成永久圖案。After the plating process is performed by the plating step, the pattern is removed, and if necessary, etching is performed to remove unnecessary portions, and a permanent pattern can be formed on the surface of the substrate.

[印刷電路板及濾色片之製法][Manufacturing method of printed circuit board and color filter]

本發明之上述圖案形成方法適用於印刷電路板之製造,尤以具通孔或介層孔等孔部的印刷電路板之製造,及濾色片之製造。以下說明利用本發明之圖案形成方法的印刷電路板之製法及濾色片之製法的一例。The above pattern forming method of the present invention is suitable for the manufacture of printed circuit boards, particularly the manufacture of printed circuit boards having holes such as vias or via holes, and the manufacture of color filters. Hereinafter, an example of a method of producing a printed circuit board and a method of producing a color filter using the pattern forming method of the present invention will be described.

-印刷電路板之製法--Manufacturing of printed circuit boards -

尤以具通孔或介層孔等孔部的印刷電路板之製法係由,(1)於作為上述基體之具孔部的印刷電路板形成用基板上,將上述圖案形成材料以其感光層在上述基體側之位置關係層積形成積層體,(2)自上述積層體之上述基體反側,於所欲區域照光使感光層硬化,(3)自上述積層體去除上述圖案形成材料之支持體、緩衝層及阻障層,(4)將上述積層體之感光層顯像,去除該積層體中之未硬化部分形成圖案。In particular, a printed circuit board having a hole portion such as a through hole or a via hole is formed by (1) applying the pattern forming material to the photosensitive layer on the substrate for forming a printed circuit board having the hole portion of the substrate. (1) curing the photosensitive layer from the opposite side of the substrate on the substrate side, and (3) removing the pattern forming material from the laminated body. The body, the buffer layer and the barrier layer, (4) developing the photosensitive layer of the laminate, and removing the uncured portion of the laminate to form a pattern.

上述(3)中上述支持體之去除可改於上述(2)與上述(4)之間進行,亦可於上述(1)與上述(2)之間進行。The removal of the support in the above (3) may be carried out between the above (2) and (4), or between (1) and (2) above.

之後為得印刷電路板,可用如上形成之圖案,作上述印刷電路板形成用基板之蝕刻處理或鍍敷處理(例如習知減除法或加成法(例如半加成法、全加成法))。其中為以工業上有利之遮覆形成印刷電路板則上述減除法為較佳。上述處理後剝離殘留於印刷電路板形成用基板之硬化樹脂,而上述半加成法者剝離後更將銅薄膜部蝕刻,可製造所欲之印刷電路板。多層印刷電路板亦可由如同上述印刷電路板之製法製造。Then, in order to obtain a printed circuit board, the pattern formed as described above may be used as an etching treatment or a plating treatment for the substrate for forming a printed circuit board (for example, a conventional subtractive method or an additive method (for example, a semi-additive method or a full additive method). ). Among them, the above subtraction method is preferable for forming a printed circuit board by industrially advantageous covering. After the above treatment, the cured resin remaining on the substrate for forming a printed circuit board is peeled off, and after the half-addition method is peeled off, the copper thin film portion is further etched to produce a desired printed circuit board. The multilayer printed circuit board can also be fabricated by a method similar to the above-described printed circuit board.

其次說明使用上述圖案形成材料之具通孔的印刷電路板之製法。Next, a method of manufacturing a printed circuit board having through holes using the above pattern forming material will be described.

首先準備具有通孔,表面覆以金屬鍍敷層之印刷電路板形成用基板。上述印刷電路板形成用基板可用例如,銅面積層板及於玻纖環氧樹脂等絕緣基體形成銅鍍敷層之基板,或於這些基板間層積有層間絕緣膜,形成有銅鍍敷層之基板(積層基板)。First, a substrate for forming a printed circuit board having a through hole and having a surface coated with a metal plating layer is prepared. The substrate for forming a printed circuit board can be formed by, for example, a copper-area laminate and a substrate on which a copper plating layer is formed on an insulating substrate such as a glass epoxy resin, or an interlayer insulating film is laminated between the substrates to form a copper plating layer. Substrate (multilayer substrate).

其次,上述圖案形成材料上有保護膜時,剝離該保護膜,使上述圖案形成材料之感光層接觸上述印刷電路板形成用基板之表面,用加壓輥壓合(層積步驟)。以此得依序有上述印刷電路板形成用基板及上述積層體之積層體。When the protective film is formed on the pattern forming material, the protective film is peeled off, and the photosensitive layer of the pattern forming material is brought into contact with the surface of the printed circuit board forming substrate, and pressed by a pressure roller (layering step). In this way, the laminated body for forming the printed circuit board and the laminated body of the laminated body described above are sequentially provided.

上述圖案形成材料之層積溫度無特殊限制,有例如室溫(15~30℃)或加熱下(30~180℃),其中以加溫下(60~140℃)為佳。The layering temperature of the pattern forming material is not particularly limited, and is, for example, room temperature (15 to 30 ° C) or heating (30 to 180 ° C), and heating (60 to 140 ° C) is preferred.

上述壓合輥之輥壓無特殊限制,以例如0.1~1MPa為佳。The roll pressure of the above-mentioned pressure roller is not particularly limited, and is preferably, for example, 0.1 to 1 MPa.

上述壓合之速度無特殊限制,以1~3m/分鐘為佳。The speed of the above pressing is not particularly limited, and is preferably 1 to 3 m/min.

上述印刷電路板形成用基板可予預熱,可於減壓下層積。The substrate for forming a printed circuit board can be preheated and laminated under reduced pressure.

上述積層體之形成,可於上述印刷電路板形成用基板上以感光性樹脂組成物溶液層積,亦可將上述圖案形成材料製造用之感光性樹脂組成物溶液等直接塗於上述印刷電路板形成用基板表面,乾燥而於上述印刷電路板形成用基板上層積感光層、阻障層、緩衝層及支持體。The layered body may be formed by depositing a solution of a photosensitive resin composition on the substrate for forming a printed circuit board, or applying a solution of a photosensitive resin composition for producing the pattern forming material to the printed circuit board. The surface of the substrate for formation is dried and a photosensitive layer, a barrier layer, a buffer layer, and a support are laminated on the substrate for forming a printed circuit board.

其次,自上述積層體之基體反側照光使感光層硬化。此際必要時(例如支持體之透光性不足時)亦可剝離上述支持體、緩衝層及阻障層後進行曝光。Next, the photosensitive layer is hardened by backlighting from the substrate of the above laminated body. When necessary (for example, when the light transmittance of the support is insufficient), the support, the buffer layer, and the barrier layer may be peeled off and exposed.

此時,上述支持體、緩衝層及阻障層未剝離時,自上述積層體剝離上述支持體、緩衝層及阻障層(剝離步驟)。At this time, when the support, the buffer layer, and the barrier layer are not peeled off, the support, the buffer layer, and the barrier layer are peeled off from the laminate (peeling step).

其次,將上述印刷電路板形成用基板上之感光層的未硬化區域以適當之顯像液溶解去除,形成電路圖案形成用之硬化層及通孔之金屬層保護用硬化層之圖案,使金屬層露出上述印刷電路板形成用基板之表面(顯像步驟)。Next, the uncured region of the photosensitive layer on the substrate for forming a printed circuit board is dissolved and removed by a suitable developing solution to form a pattern of a hardened layer for forming a circuit pattern and a hardened layer for protecting a metal layer of a via hole, thereby making a metal The surface of the substrate for forming a printed circuit board is exposed (developing step).

顯像後必要時可經後加熱處理、後曝光處理,更促進硬化部之硬化反應。顯像可係如上之濕式顯像法,亦可係乾式顯像法。After the development, if necessary, post-heat treatment and post-exposure treatment may be performed to further promote the hardening reaction of the hardened portion. The development may be a wet development as above, or a dry development.

其次將露出上述印刷電路板形成用基板表面之金屬層以蝕刻液溶解去除(蝕刻步驟)。通孔之開口部因覆有硬化樹脂組成物(遮覆膜),蝕刻液進入通孔內亦無通孔內金屬鍍敷之腐蝕,通孔之金屬鍍敷即以特定形狀留存。以此,於上述印刷電路板形成用基板形成電路圖案。Next, the metal layer on the surface of the substrate for forming a printed circuit board is exposed and dissolved by an etching solution (etching step). The opening of the through hole is covered with a hardened resin composition (covering film), and the etching liquid enters the through hole and is not corroded by metal plating in the through hole, and the metal plating of the through hole is retained in a specific shape. Thereby, a circuit pattern is formed on the substrate for forming a printed circuit board.

上述蝕刻液無特殊限制,可隨目的適當選擇,例如上述金屬層係由銅形成時,有氯化銅溶液、氯化鐵溶液、鹼蝕刻液、過氧化氫系蝕刻液等,這些之中基於蝕刻因子以氯化鐵溶液為佳。The etching liquid is not particularly limited and may be appropriately selected depending on the purpose. For example, when the metal layer is formed of copper, there are a copper chloride solution, a ferric chloride solution, an alkali etching solution, a hydrogen peroxide etching solution, and the like. The etch factor is preferably a ferric chloride solution.

其次用強鹼水溶液,使上述硬化層為剝離片,自上述印刷電路板形成用基板去除(硬化物去除步驟)。Next, the hardened layer is a release sheet by a strong alkali aqueous solution, and is removed from the substrate for forming a printed circuit board (cured material removal step).

上述強鹼水溶液之鹼成分無特殊限制,有例如氫氧化鈉、氫氧化鉀等。The alkali component of the above aqueous alkali solution is not particularly limited, and examples thereof include sodium hydroxide and potassium hydroxide.

上述強鹼水溶液之pH無特殊限制,可隨目的適當選擇,以例如約12~14為佳,約13~14更佳。The pH of the above aqueous alkali solution is not particularly limited and may be appropriately selected depending on the purpose, and is preferably, for example, about 12 to 14, more preferably about 13 to 14.

上述強鹼水溶液無特殊限制,有例如1~10質量%之氫氧化鈉水溶液或氫氧化鉀水溶液等。The strong alkali aqueous solution is not particularly limited, and may be, for example, 1 to 10% by mass of an aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution.

印刷電路板可係多層印刷電路板。The printed circuit board can be a multilayer printed circuit board.

上述圖案形成材料不只上述蝕刻程序,亦可用鍍敷程序。上述鍍敷法有例如硫酸銅鍍敷、焦磷酸銅鍍敷等銅鍍敷,高流動焊料鍍敷等焊料鍍敷,瓦特浴(watt’s bath)(硫酸鎳-氯化鎳)鍍敷、胺磺酸鎳等鎳鍍敷,硬金鍍敷,軟金鍍敷等。The pattern forming material described above may be used not only in the above etching process but also in a plating process. The plating method includes, for example, copper plating such as copper sulfate plating or copper pyrophosphate plating, solder plating such as high-flow solder plating, watt's bath (nickel sulfate-nickel chloride) plating, and amine sulfonate. Nickel plating such as nickel acid, hard gold plating, soft gold plating, etc.

-濾色片之製法--The method of producing color filters -

於玻璃基板等基體上貼合本發明之圖案形成材料的感光層,自該圖案形成材料剝離支持體、緩衝層及阻障層時,會有帶電之上述支持體(薄膜)與人體的電擊之不快,或帶電支持體有塵埃附著之問題。因此,以於上述支持體上設導電層,於上述支持體本身施以導電性賦予處理為佳。將上述導電層設於緩衝層反側之上述支持體上時,為提升耐傷性以設疏水性聚合物層為佳。The photosensitive layer of the pattern forming material of the present invention is bonded to a substrate such as a glass substrate. When the support material, the buffer layer and the barrier layer are peeled off from the pattern forming material, the support (film) charged with the human body and the human body are shocked. Not fast, or the charged support has the problem of dust adhesion. Therefore, it is preferable to provide a conductive layer on the support and to apply a conductivity imparting treatment to the support itself. When the conductive layer is provided on the support on the opposite side of the buffer layer, it is preferred to provide a hydrophobic polymer layer for improving the scratch resistance.

其次調製將上述感光層各著色為紅、綠、藍、黑的具紅色感光層之圖案形成材料、具綠色感光層之圖案形成材料、具藍色感光層之圖案形成材料及具黑色感光層之圖案形成材料。以具紅像素用之上述紅色感光層之圖案形成材料使用,將紅色感光層層積於上述基體表面形成積層體後,依樣曝光,顯像形成紅之像素。形成紅之像素後,加熱上述積層體使未硬化部分硬化。綠、藍之像素亦同樣進行,形成各像素。Next, a pattern forming material having a red photosensitive layer, a pattern forming material having a green photosensitive layer, a pattern forming material having a blue photosensitive layer, and a black photosensitive layer are prepared by coloring each of the photosensitive layers into red, green, blue, and black. Pattern forming material. The pattern forming material of the red photosensitive layer for red pixels is used, and a red photosensitive layer is laminated on the surface of the substrate to form a laminated body, and then exposed to form a red pixel. After the red pixel is formed, the laminated body is heated to harden the uncured portion. The green and blue pixels are also performed to form each pixel.

上述積層體之形成可係於上述玻璃基板上層積上述圖案形成材料,亦可將上述圖案形成材料製造用之感光性樹脂組成物溶液等直接塗於上述玻璃基板表面,乾燥,於上述玻璃基板上層積感光層、阻障層、緩衝層及支持體。配置紅、綠、藍三種像素時可配置成馬賽克型、三角型、四像素配置型等。The layered body may be formed by laminating the pattern forming material on the glass substrate, or directly applying a photosensitive resin composition solution for producing the pattern forming material to the surface of the glass substrate, and drying the layer on the glass substrate. A photosensitive layer, a barrier layer, a buffer layer, and a support. When configuring three types of red, green, and blue pixels, it can be configured as a mosaic type, a triangle type, or a four-pixel configuration type.

於形成有上述像素之面上層積上述具黑色感光層之圖案形成材料,自無像素形成之側作背面曝光,顯像,形成黑矩陣。加熱形成有該黑矩陣之積層體,使未硬化部分硬化,可製造濾色片。The pattern forming material having the black photosensitive layer is laminated on the surface on which the pixel is formed, and is back-exposed from the side where no pixel is formed, and developed to form a black matrix. The layered body of the black matrix is heated to harden the uncured portion, and a color filter can be produced.

本發明之上述圖案形成方法因使用本發明之上述圖案形成材料,適用於各種圖案之形成,電路圖案等永久圖案之形成,濾色片、柱材、肋材、間隔物、間壁等液晶構件之製造,全相圖、微機械、驗電板等之製造,尤適用於高度精細電路圖案之形成。本發明之圖案形成裝置因備有本發明之上述圖案形成材料,適用於各種圖案之形成,電路圖案等永久圖案之形成,濾色片、柱材、肋材、間隔物、間壁等液晶構件之製造,全相圖、微機械、驗電板等之製造,尤適用於高度精細電路圖案之形成。The pattern forming method of the present invention is suitable for formation of various patterns, formation of permanent patterns such as circuit patterns, liquid crystal members such as color filters, pillars, ribs, spacers, and partition walls by using the above-described pattern forming material of the present invention. The manufacture, the fabrication of full phase diagrams, micromachines, electroscopes, etc., is particularly suitable for the formation of highly detailed circuit patterns. The pattern forming device of the present invention is suitable for the formation of various patterns, the formation of permanent patterns such as circuit patterns, and liquid crystal members such as color filters, pillars, ribs, spacers, and partition walls, by the above-described pattern forming material of the present invention. The manufacture, the fabrication of full phase diagrams, micromachines, electroscopes, etc., is particularly suitable for the formation of highly detailed circuit patterns.

實施例Example

以下舉實施例更具體說明本發明,但本發明不限於這些。The invention is more specifically illustrated by the following examples, but the invention is not limited thereto.

(實施例1)(Example 1)

於作為上述支持體之厚度16 μ m的聚對酞酸乙二酯膜(TORAY公司製16FB50)塗敷下述組成之感光性樹脂組成物溶液,乾燥,形成厚度18 μ m之感光層,製造上述圖案形成材料。A solution of a photosensitive resin composition having the following composition was applied to a polyethylene terephthalate film (16 FB50, manufactured by Toray Co., Ltd.) having a thickness of 16 μm as the support, and dried to form a photosensitive layer having a thickness of 18 μm. The above pattern forming material.

[感光性樹脂組成物溶液之組成][Composition of photosensitive resin composition solution]

.甲基丙烯酸酯/苯乙烯/甲基丙烯酸共聚物(共聚物組成(質量%):19/52/29,質量平均分子量:60,000,酸值189mgKOH/g,I/O值:0.55):139.6質量份.下述構造式(1)之聚合性化合物(第一工業製藥公司製,GX8702c):44.33質量份.下述構造式(2)之聚合性化合物(第一工業製藥公司製,BPEM-10F):44.33質量份.下述構造式(3)之聚合性化合物(東亞合成公司製,ARONIX M270):6.37質量份.聚乙烯醇#1000二甲基丙烯酸酯(新中村化學,NKESTER23G):16.75質量份.光聚合引發劑2,2-雙(鄰氯苯基)-4,4’,5,5’-四苯基聯咪唑:18.5質量份.雜縮環系化合物N-丁基氯吖啶酮:0.99質量份.聚合抑制劑啡:0.032質量份.顯色劑無色結晶紫:1.10質量份.酮類有機溶劑甲基乙基酮:327.4質量份.醚類有機溶劑丙二醇一甲醚:304.9質量份.酮類有機溶劑環己酮:58.1質量份.醇類有機溶劑甲醇:36.3質量份.維多利亞純藍之萘磺酸鹽:0.186質量份.1-苯-3-吡唑啉酮:0.022質量份.氫給予體化合物N-苯基胺乙酸:0.370質量份.氟系界面活性劑(大日本油墨公司製,F780F):0.78質量份. Methacrylate/styrene/methacrylic acid copolymer (copolymer composition (% by mass): 19/52/29, mass average molecular weight: 60,000, acid value 189 mgKOH/g, I/O value: 0.55): 139.6 mass Share. The polymerizable compound of the following structural formula (1) (manufactured by Daiichi Kogyo Co., Ltd., GX8702c): 44.33 parts by mass. The polymerizable compound of the following structural formula (2) (manufactured by Dai-Il Pharmaceutical Co., Ltd., BPEM-10F): 44.33 parts by mass. The polymerizable compound of the following structural formula (3) (ARONIX M270, manufactured by Toagosei Co., Ltd.): 6.37 parts by mass. Polyvinyl alcohol #1000 dimethacrylate (Xinzhongcun Chemical, NKESTER23G): 16.75 parts by mass. Photopolymerization initiator 2,2-bis(o-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole: 18.5 parts by mass. The heterocyclic ring compound N-butylchloroacridone: 0.99 parts by mass. Polymerization inhibitor : 0.032 parts by mass. Color developer colorless crystal violet: 1.10 parts by mass. Ketone organic solvent methyl ethyl ketone: 327.4 parts by mass. Ether organic solvent propylene glycol monomethyl ether: 304.9 parts by mass. Ketone organic solvent cyclohexanone: 58.1 parts by mass. Alcohol organic solvent methanol: 36.3 parts by mass. Victoria pure blue naphthalene sulfonate: 0.186 parts by mass. 1-Benz-3-pyrazolone: 0.022 parts by mass. Hydrogen donor compound N-phenylamine acetic acid: 0.370 parts by mass. Fluorine-based surfactant (manufactured by Dainippon Ink Co., Ltd., F780F): 0.78 parts by mass

所得感光層之有機溶劑餘留量為0.30質量%。The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

上述構造式(1)中m+n為20。上述構造式(1)之化合物乃具烏拉坦基之聚合性化合物的一例。m+n in the above structural formula (1) is 20. The compound of the above structural formula (1) is an example of a polymerizable compound having urethane group.

上述構造式(2)中m+n為10。上述構造式(2)之化合物乃具芳基之聚合性化合物的一例。In the above structural formula (2), m+n is 10. The compound of the above structural formula (2) is an example of a polymerizable compound having an aryl group.

上述構造式(3)中n為12。上述構造式(3)之化合物乃有聚氧化伸烷基鏈之化合物的一例。n in the above structural formula (3) is 12. The compound of the above structural formula (3) is an example of a compound having a polyoxyalkylene chain.

<面狀缺失之評估><Evaluation of facial loss>

如上得之感光層的塗敷面狀於黃燈下目視觀察,評估面狀之缺失。上述面狀缺失之評估方法係計數感光層表面每1 m2 未達40 μ m之面狀缺失的個數及40 μ m以上面狀缺失之個數。基於該個數依下述基準評估面狀缺失性。結果如表1。The coating surface of the photosensitive layer obtained above was visually observed under a yellow light to evaluate the absence of the surface. The evaluation method of the above-mentioned planar deletion is to count the number of planar deletions of less than 40 μm per 1 m 2 of the surface of the photosensitive layer and the number of 40 μm missing in the upper shape. The planar loss was evaluated based on the number based on the following criteria. The results are shown in Table 1.

-評估基準-- Evaluation benchmark -

○...未達40 μ m之面狀缺失未達20個,且40 μ m以上之面狀缺失未達3個,呈優良塗敷面狀。○. . . Less than 20 facets of less than 40 μm, and less than 3 facets of 40 μm or more, are excellently coated.

△...未達40 μ m之面狀缺失20個以上未逹50個,或40 μ m以上之面狀缺失3個以上,未達30個,塗敷面狀略差,實用上不成問題。△. . . The surface loss of less than 40 μm is less than 50, and 50 or more of 40 μm or more are missing, and less than 30, and the coating surface is slightly poor, which is not a problem in practical use.

×...未達40 μ m之面狀缺失50個以上,或40 μ m以上之面狀缺失30個以上,塗敷面狀極差。×. . . There are 50 or more facets missing below 40 μm, or more than 30 facets missing from 40 μm or more, and the coating surface is extremely poor.

<顯色劑漏光之評估><Evaluation of light leakage of developer>

對於上述積層體之圖案形成材料的感光層,以分光光度計(島津製作所製,MPS-200)測定550nm之吸光度(OD),該吸光度0.4以下為○,超過0.4為×,評估顯色劑之漏光。結果如表1。The absorbance (OD) at 550 nm of a photosensitive layer of the pattern forming material of the above-mentioned laminated body was measured by a spectrophotometer (MPS-200, manufactured by Shimadzu Corporation), and the absorbance was 0.4 or less and was more than 0.4, and the color developing agent was evaluated. Light leaks. The results are shown in Table 1.

上述圖案形成材料之感光層上,以厚度25 μ m之聚乙烯膜(TAMAPOLY公司製,GF-1)層積作為上述保護膜。其次於作為上述基體之表面經研磨、水洗、乾燥之銅面積層板(直徑1、2、3、4、5及6mm之孔部各30,共開有180孔,銅厚12 μ m)表面,一邊剝除上述圖案形成材料之保護膜,使該圖案形成材料之感光層接觸上述銅面積層板,用層積機(MODEL 8B-720-PH,大成層積機(股)製)壓合,調製依序層積有上述銅面積層板、上述感光層及上述聚對酞酸乙二酯膜(支持體)之積層體。On the photosensitive layer of the pattern forming material, a polyethylene film (GF-1 manufactured by TAMAPOLY Co., Ltd., GF-1) having a thickness of 25 μm was laminated as the protective film. Next, on the surface of the copper-area laminate (the diameter of each of the holes 1, 2, 3, 4, 5, and 6 mm, 30 holes, and the thickness of the copper is 12 μm) which are ground, washed, and dried as the surface of the substrate. The protective film of the pattern forming material is peeled off, and the photosensitive layer of the pattern forming material is brought into contact with the copper area laminate, and is laminated by a laminator (MODEL 8B-720-PH, manufactured by a large laminator). The layered body of the copper area laminate, the photosensitive layer, and the polyethylene terephthalate film (support) is laminated in this order.

壓合條件係壓合輥溫度105℃,壓合輥壓力0.3 MPa,層積速度1m/分鐘。The press-bonding conditions were a press roll temperature of 105 ° C, a press roll pressure of 0.3 MPa, and a lamination speed of 1 m/min.

<未曝光膜破裂之評估><Evaluation of unexposure film rupture>

其次對於上述積層體之銅面積層板,依上述壓合條件,於感光層兩面層積以外如同上述積層體調製未曝光膜破裂評估用之積層體,所得積層體於室溫(25℃,50%RH)保存5日。自該保存後之積層體剝離支持體,計數上述孔部之感光層剝離破裂個數,作未曝光膜破裂之評估。上述直徑1~6mm之各孔部,以30孔未全破裂之孔部中最大者之直徑為未曝光膜破裂值。結果如表1。Next, the laminate of the copper-area laminate of the above-mentioned laminate was laminated on the both sides of the photosensitive layer in the same manner as the laminated body to prepare the laminate for evaluation of the unexposed film cracking, and the obtained laminate was at room temperature (25 ° C, 50). %RH) Save for 5 days. The deposited body after the storage was peeled off from the support, and the number of peeling and rupture of the photosensitive layer in the hole portion was counted to evaluate the crack of the unexposed film. In each of the hole portions having a diameter of 1 to 6 mm, the diameter of the largest one of the 30-hole not-broken portions is the unexposed film fracture value. The results are shown in Table 1.

-顯像步驟-- Imaging step -

自上述積層體剝除聚對酞酸乙二酯膜(支持體),於銅面積層板上之上述感光層全面將30℃之1質量%碳酸鈉水溶液以0.15 MPa之壓力噴霧,溶解去除未硬化區域。之後水洗,乾燥,形成永久圖案。The polyethylene terephthalate film (support) is peeled off from the laminate, and the photosensitive layer on the copper area layer is sprayed with a 1% by mass aqueous solution of sodium carbonate at 30 ° C at a pressure of 0.15 MPa to dissolve and remove. Hardened area. It is then washed with water and dried to form a permanent pattern.

測定碳酸鈉水溶液之噴霧開始起至銅面積層板上之感光層之溶解去除所需時間,以之為最短顯像時間。該最短顯像時間愈短顯像性愈優。The time required for the dissolution of the photosensitive layer on the copper area layer from the start of the spraying of the aqueous sodium carbonate solution was measured, which was the shortest development time. The shorter the shortest development time, the better the imaging performance.

對於形成有上述永久圖案之積層體全面,於160℃施以加熱處理30分鐘,將永久圖案表面硬化,提高膜強度。目視觀察該永久圖案則永久圖案表面無氣泡可見。The laminated body on which the above permanent pattern was formed was subjected to heat treatment at 160 ° C for 30 minutes to harden the surface of the permanent pattern to increase the film strength. Visually observing the permanent pattern, the surface of the permanent pattern is free of bubbles.

對於形成有上述永久圖案之印刷電路基板,依常法鍍金後作水性助焊劑處理。其次,置於設定為260℃之焊料槽5秒,浸泡3次,水洗去除助焊劑。The printed circuit board on which the above permanent pattern is formed is subjected to an aqueous flux treatment by gold plating according to a usual method. Next, it was placed in a solder bath set at 260 ° C for 5 seconds, soaked 3 times, and washed with water to remove the flux.

<解析度><resolution> (1)感度之測定(1) Determination of sensitivity

對於上述積層體之圖案形成材料的感光層,自聚對酞酸乙二酯膜(支持體)側,以具405nm雷射光源之圖案形成裝置用作上述照光機構,0.1 mJ/cm2 起至100 mJ/cm2 以21 / 2 倍間隔之不同光能量照射曝光,使上述感光層之部分區域硬化。於室溫靜置10分鐘後,自上述積層體剝除聚對酞酸乙二酯膜(支持體),於銅面積層板上之感光層全面將碳酸鈉水溶液(30℃,1質量%)以噴霧壓力0.15 MPa經上述顯像步驟求出之最短顯像時間的2倍時間噴霧,溶解去除未硬化之區域,測定餘留之硬化區域的厚度。其次將光照射量與硬化層厚度之關係繪圖得感度曲線。自如此得之感度曲線,以硬化區域厚度達15 μ m時之光能量為感光層硬化之所需能量。結果如表1。For the photosensitive layer of the pattern forming material of the above laminated body, a pattern forming device having a 405 nm laser light source is used as the above-mentioned illumination mechanism from the side of the polyethylene terephthalate film (support), from 0.1 mJ/cm 2 to 100 mJ/cm 2 was exposed to light at a different light energy interval of 2 1 / 2 times to harden a part of the photosensitive layer. After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled off from the laminate, and the photosensitive layer on the copper area layer was completely subjected to an aqueous solution of sodium carbonate (30 ° C, 1% by mass). The spray was applied at a spray pressure of 0.15 MPa twice as long as the shortest development time determined by the above development step, and the unhardened region was dissolved and removed, and the thickness of the remaining hardened region was measured. Next, the relationship between the amount of light irradiation and the thickness of the hardened layer is plotted as a sensitivity curve. From the sensitivity curve thus obtained, the light energy at a thickness of 15 μm in the hardened region is the energy required for the hardening of the photosensitive layer. The results are shown in Table 1.

(2)解析度之測定(2) Determination of resolution

將上述積層體靜置於室溫(23℃,55%RH)10分鐘。自所得積層體之聚對酞酸乙二酯膜(支持體)上,用上述圖案形成裝置,以線條/間隔=1/1,於線寬5~20 μ m每差1 μ m作各線寬之曝光,於線寬20~50 μ m每差5 μ m作各線寬之曝光。此際之曝光量乃上述(1)中測定之使上述圖案形成材料的感光層硬化所需之光能量。於室溫靜置10分鐘後,自上述積層體剝除聚對酞酸乙二酯膜(支持體)。於銅面積層板上感光層全面將顯像液碳酸鈉水溶液(30℃,1質量%)以0.15 MPa之壓力經上述顯像步驟求出之最短顯像時間的2倍時間噴霧,溶解去除未硬化區域。如此得之附有硬化樹脂圖案之銅面積層板表面以光學顯微鏡觀察,測定硬化樹脂圖案線條之無收縮、歪扭等異常之最小線寬,以之為解析度。該解析度數值愈小愈佳。結果如表1。The laminate was left to stand at room temperature (23 ° C, 55% RH) for 10 minutes. From the obtained polyethylene terephthalate film (support) of the laminated body, the line forming device is used, and the line width/interval is 1/1, and the line width is 5 to 20 μm, and each line width is 1 μm. The exposure is performed at a line width of 20 to 50 μm and a difference of 5 μm for each line width. The amount of exposure at this time is the light energy required to harden the photosensitive layer of the pattern forming material measured in the above (1). After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled off from the above laminate. On the copper area layer, the photosensitive layer is completely sprayed with a solution of sodium carbonate (30 ° C, 1% by mass) at a pressure of 0.15 MPa twice the shortest development time determined by the above-mentioned development step, and dissolved and removed. Hardened area. The surface of the copper-area laminate to which the hardened resin pattern was attached was observed by an optical microscope, and the minimum line width of the line of the hardened resin pattern without abnormality such as shrinkage or twist was measured, which was the resolution. The smaller the resolution value, the better. The results are shown in Table 1.

<遮覆性><coverage>

上述未曝光膜破裂評估用之積層體的銅面積層板改為有200個直徑2mm之通孔的銅面積層板以外,如同上述積層體,調製遮覆性評估用積層體,於室溫(23℃,55%RH)條件下放置10分鐘。其次,自如上調製之積層體的聚對酞酸乙二酯膜(支持體)上,使用上述圖案形成裝置,於該積層體之感光層全面曝光。此際之曝光量乃上述解析度評估之(2)中測定之使上述圖案形成材料之感光層硬化所需之光能量。於室溫靜置10分鐘後,自上述積層體剝除聚對酞酸乙二酯膜(支持體)。於上述銅面積層板上之上述感光層全面,將顯像液碳酸鈉水溶液(30℃,1質量%)以噴霧壓力0.15MPa經上述顯像步驟求出之最短顯像時間的2倍時間噴霧。形成在如此得之上述銅面積層板之通孔開口部上的硬化層(遮覆膜),其剝落、破裂等缺失之有無以顯微鏡觀察,計數缺失發生率。結果如表1。The copper-area laminate of the laminate for the evaluation of the unexposed film fracture was changed to a copper-area laminate having 200 through-holes having a diameter of 2 mm, and the laminate for evaluation of the covering property was prepared at room temperature as in the above-mentioned laminate. Leave at 23 ° C, 55% RH) for 10 minutes. Next, the above-mentioned pattern forming apparatus was used on the polyethylene terephthalate film (support) of the laminate prepared as described above, and the photosensitive layer of the laminate was entirely exposed. The amount of exposure at this time is the light energy required to harden the photosensitive layer of the pattern forming material measured in the above-described resolution evaluation (2). After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled off from the above laminate. The photosensitive layer on the copper area layer plate is completely sprayed, and the developing solution sodium carbonate aqueous solution (30° C., 1% by mass) is sprayed at a spray pressure of 0.15 MPa twice as long as the shortest development time obtained by the above-mentioned developing step. . The hardened layer (masking film) formed on the opening of the through-hole of the copper-area layer thus obtained was observed by a microscope under the presence of a defect such as peeling or cracking, and the occurrence rate of the missing was counted. The results are shown in Table 1.

<剝離時間之測定><Measurement of peeling time>

以如同上述顯像性之評估的方法及條件製作上述積層體,於室溫(23℃,55%RH)條件靜置10分鐘。自所得積層體之聚對酞酸乙二酯膜(支持體)上,使用上述圖案形成裝置全面曝光。此際之曝光量乃如上測定之使上述圖案形成材料之感光層硬化所需之光能量。於室溫靜置10分鐘後,自上述積層體剝除聚對酞酸乙二酯膜(支持體)。於銅面積層板上之感光層全面,將上述顯像液碳酸鈉水溶液(30℃,1質量%)以噴霧壓力0.15MPa經上述顯像步驟求出之最短顯像時間的2倍時間噴霧。乾燥後將基板豎立浸泡於3質量%之氫氧化鈉水溶液中,測定膜完全剝離為止之時間。該時間愈短愈佳。結果如表1。The laminate was produced in the same manner as in the evaluation of the above-mentioned developability, and allowed to stand at room temperature (23 ° C, 55% RH) for 10 minutes. From the polyethylene terephthalate film (support) of the obtained laminate, the above pattern forming apparatus was used for overall exposure. The amount of exposure at this time is the light energy required to harden the photosensitive layer of the pattern forming material as described above. After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled off from the above laminate. The photosensitive layer on the copper-area layer was completely sprayed, and the above-mentioned developing solution of sodium carbonate (30 ° C, 1% by mass) was sprayed at a spray pressure of 0.15 MPa twice as long as the shortest development time obtained by the above-mentioned development step. After drying, the substrate was immersed in a 3 mass% aqueous sodium hydroxide solution, and the time until the film was completely peeled off was measured. The shorter the time, the better. The results are shown in Table 1.

(實施例2)(Example 2)

實施例1中上述酮類有機溶劑環己酮改用醚類有機溶劑四氫呋喃以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。In Example 1, except that the ketone organic solvent cyclohexanone was changed to an ether organic solvent tetrahydrofuran, a pattern forming material and a laminate were produced as in Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例3)(Example 3)

實施例1中結合劑改為甲基丙烯酸甲酯/苯乙烯/甲基丙烯酸共聚物(共聚物組成(質量%):46/31/23,質量平均分子量:60,000,酸值150mgKOH/g,I/O值:0.63)以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。The binder in Example 1 was changed to methyl methacrylate/styrene/methacrylic acid copolymer (copolymer composition (% by mass): 46/31/23, mass average molecular weight: 60,000, acid value 150 mgKOH/g, I A pattern forming material and a laminate were produced as in Example 1 except that the value of /O: 0.63). The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例4)(Example 4)

實施例1中有機溶劑之組成改為如下以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.40質量%。The pattern forming material and the laminate were produced as in Example 1 except that the composition of the organic solvent in Example 1 was changed as follows. The residual amount of the organic solvent of the obtained photosensitive layer was 0.40% by mass.

.酮類有機溶劑甲基乙基酮:227.4質量份.醚類有機溶劑丙二醇一甲醚:327.4質量份.酮類有機溶劑環己酮:79.0質量份.醚類有機溶劑四氫呋喃:58.1質量份. Ketone organic solvent methyl ethyl ketone: 227.4 parts by mass. Ether organic solvent propylene glycol monomethyl ether: 327.4 parts by mass. Ketone organic solvent cyclohexanone: 79.0 parts by mass. Ether organic solvent tetrahydrofuran: 58.1 parts by mass

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例5)(Example 5)

實施例1中不含上述構造式(40)之聚合性化合物及聚乙烯醇#1000二甲基丙烯酸酯,且含上述構造式(38)之聚合性化合物及構造式(39)之聚合性化合物共55.89質量份以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。In the first embodiment, the polymerizable compound of the above structural formula (40) and polyvinyl alcohol #1000 dimethacrylate are not contained, and the polymerizable compound of the above structural formula (38) and the polymerizable compound of the structural formula (39) are contained. A pattern forming material and a laminate were produced as in Example 1 except for a total of 55.89 parts by mass. The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例6)(Example 6)

實施例1中支持體改為厚度16 μ m之聚對酞酸乙二酯膜(TORAY公司製,16QS52)以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。In the same manner as in Example 1, except that the support was changed to a polyethylene terephthalate film (manufactured by Toray Co., Ltd., 16QS52) having a thickness of 16 μm, a pattern forming material and a laminate were produced as in Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例7)(Example 7)

實施例1中支持體改為厚度16 μ m之聚酯膜(三菱化學公司製,R-340G)以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。In the same manner as in Example 1, except that the support was changed to a polyester film having a thickness of 16 μm (R-340G, manufactured by Mitsubishi Chemical Corporation), a pattern forming material and a laminate were produced as in Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例8)(Example 8)

實施例1中保護膜改為厚度12 μ m之聚丙烯膜(王子特殊紙公司製,E-501)以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。In the same manner as in Example 1, except that the protective film of the first embodiment was changed to a polypropylene film (E-501, manufactured by Oji Paper Co., Ltd.) having a thickness of 12 μm, a pattern forming material and a laminate were produced as in Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(實施例9)(Example 9)

實施例6中保護膜改為厚度20 μ m之聚丙烯膜(王子特殊紙公司製,E-200)以外,如同實施例6製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.30質量%。In the same manner as in Example 6, except that the protective film was changed to a polypropylene film (E-200, manufactured by Oji Paper Co., Ltd.) having a thickness of 20 μm, a pattern forming material and a laminate were produced as in Example 6. The residual amount of the organic solvent of the obtained photosensitive layer was 0.30% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例6評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 6, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例1)(Comparative Example 1)

實施例1中有機溶劑之組成改為如下以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。The pattern forming material and the laminate were produced as in Example 1 except that the composition of the organic solvent in Example 1 was changed as follows. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

.酮類有機溶劑甲基乙基酮:127.4質量份.醚類有機溶劑丙二醇一甲醚:404.9質量份.酮類有機溶劑環己酮:158.1質量份.醇類有機溶劑甲醇:36.3質量份. Ketone organic solvent methyl ethyl ketone: 127.4 parts by mass. Ether organic solvent propylene glycol monomethyl ether: 404.9 parts by mass. Ketone organic solvent cyclohexanone: 158.1 parts by mass. Alcohol organic solvent methanol: 36.3 parts by mass

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例2)(Comparative Example 2)

實施例1中有機溶劑之組成改為如下以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為0.8質量%。The pattern forming material and the laminate were produced as in Example 1 except that the composition of the organic solvent in Example 1 was changed as follows. The residual amount of the organic solvent of the obtained photosensitive layer was 0.8% by mass.

.醚類有機溶劑丙二醇一甲醚:350質量份.酮類有機溶劑環己酮:100質量份.醇類有機溶劑甲醇:149.3質量份. Ether organic solvent propylene glycol monomethyl ether: 350 parts by mass. Ketone organic solvent cyclohexanone: 100 parts by mass. Alcohol organic solvent methanol: 149.3 parts by mass

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例3)(Comparative Example 3)

實施例1中有機溶劑之組成改為如下以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。The pattern forming material and the laminate were produced as in Example 1 except that the composition of the organic solvent in Example 1 was changed as follows. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

[有機溶劑之組成][Composition of organic solvents]

.酮類有機溶劑甲基乙基酮:227.4質量份.醚類有機溶劑丙二醇一甲醚:404.9質量份.酮類有機溶劑環己酮:94.4質量份.醇類有機溶劑甲醇:不添加. Ketone organic solvent methyl ethyl ketone: 227.4 parts by mass. Ether organic solvent propylene glycol monomethyl ether: 404.9 parts by mass. Ketone organic solvent cyclohexanone: 94.4 parts by mass. Alcohol organic solvent methanol: no added

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例4)(Comparative Example 4)

實施例1中結合劑改為甲基丙烯酸甲酯/苯乙烯/甲基丙烯酸共聚物(共聚物組成(質量%):46/31/23,質量平均分子量:60,000,酸值150mgKOH/g,I/O值:0.63):139.58質量份以外,如同實施例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。The binder in Example 1 was changed to methyl methacrylate/styrene/methacrylic acid copolymer (copolymer composition (% by mass): 46/31/23, mass average molecular weight: 60,000, acid value 150 mgKOH/g, I /O value: 0.63): A pattern forming material and a laminate were produced as in Example 1 except for 139.58 parts by mass. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例5)(Comparative Example 5)

比較例1中聚合性化合物改為下述構造式(39)之聚合性化合物(第一工業製藥公司製,BPEM-10F)111.78質量份以外,如同比較例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。In the comparative example 1, the polymerizable compound was changed to 111.78 parts by mass of the polymerizable compound of the following structural formula (39) (BPEM-10F, manufactured by Dai-ichi Kogyo Co., Ltd.), and a pattern forming material and a laminate were produced as in Comparative Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例6)(Comparative Example 6)

比較例1中不添加還原劑1-苯-3-吡唑啉酮以外,如同比較例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。In Comparative Example 1, a pattern forming material and a laminate were produced as in Comparative Example 1, except that the reducing agent 1-phenyl-3-pyrazolone was not added. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例7)(Comparative Example 7)

比較例1中不添加聚合抑制劑啡噻以外,如同比較例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。No polymerization inhibitor thiophene was added in Comparative Example 1. A pattern forming material and a laminate were produced as in Comparative Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例8)(Comparative Example 8)

比較例1中雜縮環系化合物N-丁基氯吖啶酮改為二乙胺二苯基酮以外,如同比較例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。In Comparative Example 1, except that the heterocyclic ring compound N-butylchloroacridone was changed to diethylamine diphenyl ketone, a pattern forming material and a laminate were produced as in Comparative Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例9)(Comparative Example 9)

比較例1中維多利亞純藍之萘基磺酸鹽改為孔雀綠以外,如同比較例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。In Comparative Example 1, except that the Victoria Pure Blue Naphthylsulfonate was changed to Malachite Green, a pattern forming material and a laminate were produced as in Comparative Example 1. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

(比較例10)(Comparative Example 10)

比較例1中不添加N-苯基胺乙酸以外,如同比較例1製造圖案形成材料及積層體。所得感光層之有機溶劑餘留量為1質量%。In Comparative Example 1, a pattern forming material and a laminate were produced as in Comparative Example 1, except that N-phenylamineacetic acid was not added. The residual amount of the organic solvent of the obtained photosensitive layer was 1% by mass.

<評估><evaluation>

使用所得圖案形成材料,如同實施例1評估面狀缺失、顯色劑之漏光、未曝光膜之破裂、感度、解析度、遮覆性及剝離時間。結果如表1。Using the obtained pattern forming material, as in Example 1, the surface loss, the light leakage of the developer, the cracking of the unexposed film, the sensitivity, the resolution, the hiding property, and the peeling time were evaluated. The results are shown in Table 1.

由表1之結果知,實施例1~9之圖案形成材料因於感光層含選自酮類、醇類及醚類之至少1種有機溶劑,且其餘留量在0.5質量%以下,面狀缺失少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,可形成更高度精細之圖案。尤以有機溶劑之餘留量在0.35質量%以下,結合劑之I/O值在0.35~0.60,聚合性化合物係含具有聚氧化伸烷基鏈之化合物的實施例1、2及6~9之圖案形成材料極度地,面狀缺失少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,可形成更高度精細之圖案。而比較例1~10之圖案形成材料則至少,未曝光膜之破裂多,遮覆膜強度低,且圖案形成後剝離性差,且其它評估項目亦多比實施例差,無法形成精細之圖案。As a result of the results of Table 1, the pattern forming materials of Examples 1 to 9 contain at least one organic solvent selected from the group consisting of ketones, alcohols, and ethers, and the remaining amount is 0.5% by mass or less. The loss is small, the light leakage caused by the color developer is prevented, the crack of the unexposed film is small, the resolution is high, the strength of the mask film is large, and the peelability after pattern formation is good, and a more highly detailed pattern can be formed. In particular, the residual amount of the organic solvent is 0.35 mass% or less, the I/O value of the binder is 0.35 to 0.60, and the polymerizable compound is a compound containing a polyoxyalkylene chain, and examples 1, 2, and 6 to 9 The pattern forming material is extremely thin, has little surface loss, prevents light leakage caused by the color developing agent, has less cracking of the unexposed film, has high resolution, has high strength of the covering film, and has good peelability after pattern formation, and can be formed more. Highly detailed pattern. On the other hand, in the pattern forming materials of Comparative Examples 1 to 10, at least the unexposed film was cracked, the thickness of the mask film was low, and the peeling property after pattern formation was poor, and other evaluation items were often inferior to the examples, and a fine pattern could not be formed.

產業上之利用可能性Industrial use possibility

本發明之圖案形成材料面狀缺失少,可防顯色劑所致之漏光,未曝光膜之破裂少,解析度高,遮覆膜強度大,且圖案形成後剝離性良好,可形成更高度精細之圖案。因此,適用於各種圖案之形成,電路圖案等永久圖案之形成,濾色片、柱材、肋材、間隔物、間壁等液晶構件之製造,全相圖、微透鏡、驗電板製造等,尤適於高度精細電路圖案之形成。The pattern forming material of the present invention has less surface loss, can prevent light leakage caused by the color developing agent, has less cracking of the unexposed film, has high resolution, high strength of the covering film, and good peelability after pattern formation, and can form a higher height. Fine pattern. Therefore, it is suitable for the formation of various patterns, the formation of permanent patterns such as circuit patterns, the manufacture of liquid crystal members such as color filters, pillars, ribs, spacers, and partitions, and the production of full-phase diagrams, microlenses, and electroscopes. It is especially suitable for the formation of highly detailed circuit patterns.

本發明之圖案形成裝置因備有本發明之圖案形成材料,適用於各種圖案之形成,電路圖案等永久圖案之形成,濾色片、柱材、肋材、間隔物、間壁等液晶構件之製造,全相圖、微透鏡、驗電板等之製造,尤適於高度精細電路圖案之形成。The pattern forming device of the present invention is provided with the pattern forming material of the present invention, and is suitable for formation of various patterns, formation of permanent patterns such as circuit patterns, liquid crystal members such as color filters, pillars, ribs, spacers, and partition walls. Manufacturing, fabrication of full phase diagrams, microlenses, electroscopes, etc., is particularly suitable for the formation of highly detailed circuit patterns.

本發明之圖案形成方法因使用本發明之上述圖案形成材料,適用於各種圖案之形成,電路圖案等永久圖案之形成,濾色片、柱材、肋材、間隔物、間壁等液晶構件之製造,全相圖、微透鏡、驗電板等之製造,尤適於高度精細電路圖案之形成。The pattern forming method of the present invention is suitable for formation of various patterns, formation of permanent patterns such as circuit patterns, and liquid crystal members such as color filters, pillars, ribs, spacers, and partition walls by using the above-described pattern forming material of the present invention. Manufacturing, fabrication of full phase diagrams, microlenses, electroscopes, etc., is particularly suitable for the formation of highly detailed circuit patterns.

Claims (19)

一種圖案形成材料,其具有支持體、及該支持體上之感光層,該感光層含(A)結合劑、(B)聚合性化合物、(C)光聚合引發劑、(D)雜縮環系化合物、(E)聚合抑制劑、(F)顯色劑及(G)有機溶劑,其中(A)結合劑之酸值在50~400mgKOH/g,且質量平均分子量為10,000~100,000,(B)聚合性化合物含有(b1)具烏拉坦(urethane)基之化合物及(b2)具芳基之化合物中至少任一種,(G)有機溶劑係選自酮類、醇類及醚類中至少1種,且殘留量0.5質量%以下;其特徵為更含有具三芳基甲烷骨架之化合物的染料、還原劑及氫給予體化合物。 A pattern forming material having a support and a photosensitive layer on the support, the photosensitive layer comprising (A) a binder, (B) a polymerizable compound, (C) a photopolymerization initiator, and (D) a toroidal ring a compound, (E) a polymerization inhibitor, (F) a color developer, and (G) an organic solvent, wherein the (A) binder has an acid value of 50 to 400 mgKOH/g and a mass average molecular weight of 10,000 to 100,000, (B) The polymerizable compound contains at least one of (b1) a compound having a urethane group and (b2) an aryl group-containing compound, and the (G) organic solvent is at least one selected from the group consisting of a ketone, an alcohol, and an ether. The residual amount is 0.5% by mass or less; and is characterized by a dye, a reducing agent, and a hydrogen donor compound further containing a compound having a triarylmethane skeleton. 如申請專利範圍第1項之圖案形成材料,其中(A)結合劑之I/O值在0.35~0.60。 For example, in the pattern forming material of claim 1, wherein the (A) binder has an I/O value of 0.35 to 0.60. 如申請專利範圍第1項之圖案形成材料,其中(B)聚合性化合物含具有聚氧化伸烷鏈之化合物,該聚氧化伸烷鏈具有伸乙基及伸丙基中至少任一種。 The pattern forming material according to claim 1, wherein the (B) polymerizable compound contains a compound having a polyoxyalkylene chain having at least one of an extended ethyl group and a stretched propyl group. 如申請專利範圍第1項之圖案形成材料,其中(D)雜縮環系化合物含選自雜縮環系酮化合物、喹啉化合物及吖啶化合物中至少1種。 The pattern forming material according to claim 1, wherein the (D) heterocyclic ring compound contains at least one selected from the group consisting of a heterocyclic ketone compound, a quinoline compound, and an acridine compound. 如申請專利範圍第1項之圖案形成材料,其中(E)聚合抑 制劑係選自具有至少2個以上酚式羥基之化合物、具有經亞胺基取代之芳環的化合物、具有經亞胺基取代之雜環的化合物及受阻胺化合物中至少1種。 For example, the pattern forming material of claim 1 of the patent scope, wherein (E) polymerization inhibits The preparation is selected from at least one selected from the group consisting of a compound having at least two phenolic hydroxyl groups, a compound having an aromatic ring substituted with an imine group, a compound having a heterocyclic ring substituted with an imine group, and a hindered amine compound. 如申請專利範圍第1項之圖案形成材料,其中(G)有機溶劑係甲基乙基酮、環己酮、甲醇、甲基丙二醇及四氫呋喃之至少任一種。 The pattern forming material according to claim 1, wherein the (G) organic solvent is at least one of methyl ethyl ketone, cyclohexanone, methanol, methyl propylene glycol, and tetrahydrofuran. 如申請專利範圍第1項之圖案形成材料,其中含有具三芳基甲烷骨架之化合物的染料係芳基磺酸化合物。 A pattern forming material according to claim 1, which comprises a dye-based arylsulfonic acid compound having a compound of a triarylmethane skeleton. 如申請專利範圍第1項之圖案形成材料,其中還原劑係1-苯-3-吡唑啉酮(phenidone)。 The pattern forming material of claim 1, wherein the reducing agent is 1-phen-3-pyrazolone. 如申請專利範圍第1項之圖案形成材料,其中感光層於將該感光層曝光顯像時,該感光層曝光部分之厚度在該曝光及顯像後不變,用於上述曝光之最小能量在0.1~20mJ/cm2The pattern forming material of claim 1, wherein the photosensitive layer is exposed to the photosensitive layer, the thickness of the exposed portion of the photosensitive layer is unchanged after the exposure and development, and the minimum energy for the exposure is 0.1~20mJ/cm 2 . 如申請專利範圍第1項之圖案形成材料,其中結合劑於鹼性水溶液呈膨潤性或溶解性。 The pattern forming material of claim 1, wherein the binder is swellable or soluble in an aqueous alkaline solution. 如申請專利範圍第1項之圖案形成材料,其中結合劑含共聚物,該共聚物具有來自苯乙烯及苯乙烯衍生物中至少任一種之構造單元。 The pattern forming material of claim 1, wherein the binder comprises a copolymer having a structural unit derived from at least one of styrene and a styrene derivative. 如申請專利範圍第1項之圖案形成材料,其中結合劑之玻璃轉移溫度在80℃以上。 The pattern forming material of claim 1, wherein the glass transition temperature of the bonding agent is above 80 °C. 一種圖案形成裝置,備有如申請專利範圍第1項之圖案形成材料,其特徵為至少具有可照光之照光機構,及調制來自該照光機構之光,對於上述圖案形成材料之感光層進行曝光之光 調制機構。 A pattern forming apparatus comprising the pattern forming material according to claim 1 which is characterized in that at least an illuminating light illuminating means is provided, and light from the illuminating means is modulated, and the photosensitive layer of the pattern forming material is exposed to light. Modulation mechanism. 一種圖案形成方法,其特徵為至少包含對於如申請專利範圍第1項之圖案形成材料之該感光層進行曝光。 A pattern forming method characterized by comprising at least exposing the photosensitive layer to a pattern forming material according to claim 1 of the patent application. 如申請專利範圍第14項之圖案形成方法,其中曝光係基於形成之圖案資訊生成控制信號,使用依該控制信號調制之光進行。 The pattern forming method of claim 14, wherein the exposure is based on the formed pattern information to generate a control signal, using light modulated according to the control signal. 如申請專利範圍第14項之圖案形成方法,其中曝光係以光調制機構將光調制後,通過具有可校正上述光調制機構之像素部射出面的變形所致之像差的非球面之微透鏡排列成之微透鏡陣列而進行。 The pattern forming method of claim 14, wherein the exposure system modulates light by the light modulating mechanism, and passes through an aspherical microlens having aberrations that can correct deformation of the exit surface of the pixel portion of the light modulating mechanism. Performed by arranging the microlens arrays. 如申請專利範圍第16項之圖案形成方法,其中非球面係複曲面。 The pattern forming method of claim 16, wherein the aspherical surface is a toric surface. 如申請專利範圍第14項之圖案形成方法,其中進行曝光後進行感光層之顯像。 The pattern forming method of claim 14, wherein the exposure of the photosensitive layer is performed after exposure. 如申請專利範圍第18項之圖案形成方法,其中進行顯像後進行永久圖案之形成。 A pattern forming method according to claim 18, wherein the permanent pattern is formed after development.
TW95132517A 2005-09-14 2006-09-04 Pattern forming material, pattern forming device and pattern forming method TWI411880B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005266876A JP4966528B2 (en) 2005-09-14 2005-09-14 Pattern forming material, pattern forming apparatus and pattern forming method

Publications (2)

Publication Number Publication Date
TW200722918A TW200722918A (en) 2007-06-16
TWI411880B true TWI411880B (en) 2013-10-11

Family

ID=37864793

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95132517A TWI411880B (en) 2005-09-14 2006-09-04 Pattern forming material, pattern forming device and pattern forming method

Country Status (4)

Country Link
JP (1) JP4966528B2 (en)
CN (1) CN101263425B (en)
TW (1) TWI411880B (en)
WO (1) WO2007032195A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5549439B2 (en) * 2009-09-18 2014-07-16 Jsr株式会社 Radiation sensitive resin composition for forming cured product as protective film, insulating film or spacer for display element, cured product and method for forming the same
CN102331684A (en) * 2010-07-13 2012-01-25 日立化成工业株式会社 Photosensitive element, formation method of corrosion-resisting pattern, manufacture method of printing circuit wiring board and printing circuit wiring board
JP5697461B2 (en) 2011-01-17 2015-04-08 ユニチカ株式会社 Polyester film and photosensitive resin structure
JP2013023592A (en) * 2011-07-21 2013-02-04 Auto Kagaku Kogyo Kk Primer composition, and method for constructing sealing material using the primer composition and method for constructing waterproof material using the primer composition
JP5814097B2 (en) * 2011-12-06 2015-11-17 富士フイルム株式会社 Photosensitive resin composition for photo spacer for microlens array exposure
CN104471482B (en) * 2012-07-20 2019-08-02 旭化成株式会社 The manufacturing method of photoresist element
JP6423793B2 (en) * 2013-09-11 2018-11-14 三洋化成工業株式会社 Active energy ray-curable resin composition and cured product
MY176799A (en) * 2013-11-29 2020-08-21 Asahi Chemical Ind Photosensitive resin element
JP6309761B2 (en) * 2013-12-27 2018-04-11 東京応化工業株式会社 Photosensitive resin composition for black column spacer
JP2016133661A (en) * 2015-01-20 2016-07-25 日立化成株式会社 Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for manufacturing structure
KR20180034525A (en) * 2015-08-31 2018-04-04 후지필름 가부시키가이샤 COLORED SENSITIVE COMPOSITION, CURED FILM, COLOR FILTER, SHELF-WINDING FILM, SOLID-STATE IMAGING DEVICE, IMAGE DISPLAY, AND METHOD FOR PRODUCING CURED FILM
WO2018037812A1 (en) 2016-08-25 2018-03-01 富士フイルム株式会社 Curable composition and production process therefor, cured film and production process therefor, color filter, solid-state imaging element, solid-state imaging device, and infrared sensor
WO2019088268A1 (en) * 2017-11-06 2019-05-09 旭化成株式会社 Photosensitive resin laminate and method for producing resist pattern
JP6959887B2 (en) * 2018-03-26 2021-11-05 ニッコー・マテリアルズ株式会社 A photosensitive resin composition, a photoresist film using the photosensitive resin composition, and a method for forming a resist pattern.
JPWO2019225363A1 (en) * 2018-05-22 2021-04-22 富士フイルム株式会社 Photosensitive transfer material, resin pattern manufacturing method, circuit wiring manufacturing method, and touch panel manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002323761A (en) * 2001-04-26 2002-11-08 Asahi Kasei Corp Photosensitive resin laminate
US20040131975A1 (en) * 2000-04-19 2004-07-08 Lastra S.P.A. Photosensitive lithographic printing plate and method for making a printing plate
CN1550875A (en) * 2003-05-07 2004-12-01 富士胶片株式会社 Projecting exposure apparatus
CN1596386A (en) * 2001-11-12 2005-03-16 旭化成电子材料元件株式会社 Photosensitive resin composition and applications thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001036A (en) * 1989-03-03 1991-03-19 E. I. Du Pont De Nemours And Company Multi-layer peel-apart photosensitive reproduction element containing a photorelease layer
JP2756623B2 (en) * 1992-02-26 1998-05-25 富士写真フイルム株式会社 Photopolymerizable composition
JP2001318461A (en) * 2000-05-11 2001-11-16 Nichigo Morton Co Ltd Photosensitive resin composition and photosensitive film using the same
JP3824508B2 (en) * 2001-08-10 2006-09-20 旭化成エレクトロニクス株式会社 Dry film resist and manufacturing method thereof
US7074546B2 (en) * 2002-06-24 2006-07-11 Konica Corporation Light sensitive planographic printing plate precursor and its processing method
JP3797331B2 (en) * 2003-01-20 2006-07-19 日立化成工業株式会社 Photosensitive resin composition, photosensitive element using the same, resist pattern manufacturing method, and printed wiring board manufacturing method
JP4305732B2 (en) * 2003-04-17 2009-07-29 日立化成工業株式会社 Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern, and method for producing printed wiring board
JP2004335639A (en) * 2003-05-06 2004-11-25 Fuji Photo Film Co Ltd Projection aligner
JP2005070175A (en) * 2003-08-20 2005-03-17 Fuji Photo Film Co Ltd Photopolymerizable composition and dry film photoresist
JP2005136223A (en) * 2003-10-30 2005-05-26 Fuji Photo Film Co Ltd Manufacturing method of printed circuit board
KR100742251B1 (en) * 2003-12-26 2007-07-24 후지필름 가부시키가이샤 Method and device for image exposure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040131975A1 (en) * 2000-04-19 2004-07-08 Lastra S.P.A. Photosensitive lithographic printing plate and method for making a printing plate
JP2002323761A (en) * 2001-04-26 2002-11-08 Asahi Kasei Corp Photosensitive resin laminate
CN1596386A (en) * 2001-11-12 2005-03-16 旭化成电子材料元件株式会社 Photosensitive resin composition and applications thereof
CN1550875A (en) * 2003-05-07 2004-12-01 富士胶片株式会社 Projecting exposure apparatus

Also Published As

Publication number Publication date
JP4966528B2 (en) 2012-07-04
CN101263425A (en) 2008-09-10
TW200722918A (en) 2007-06-16
JP2007079128A (en) 2007-03-29
CN101263425B (en) 2012-06-13
WO2007032195A1 (en) 2007-03-22

Similar Documents

Publication Publication Date Title
TWI411880B (en) Pattern forming material, pattern forming device and pattern forming method
CN101135852B (en) Pattern forming material and method
KR101012907B1 (en) Photosensitive element, method for formation of resist pattern, and method for production of print circuit board
TWI501034B (en) Coloring composition, color filter and color liquid crystal display element
TWI375127B (en) Pattern-forming material, pattern-forming device and pattern-forming method
CN1950750B (en) Pattern forming material, pattern forming apparatus and pattern forming method
TWI480683B (en) A photosensitive resin composition and a photosensitive member using the same, a method for forming a photoresist pattern, and a method for manufacturing a printed circuit board
KR100768364B1 (en) Photosensitive resin composition, photosensitive element using same, method for forming resist pattern, method for producing printed wiring board, and method for removing photocured product
TW201224656A (en) Photosensitive resin composition, photosensitive element, method for resist pattern formation, and method for manufacturing printed wiring board
CN101263423A (en) Photosensitive composition, pattern-forming material, photosensitive laminate, apparatus for formation of pattern, and method for formation of pattern
TW200935174A (en) Photosensitive composition, photosensitive film, photosensitive laminate, method of forming permanent pattern, and printed board
KR19990030073A (en) Formation method of negative photosensitive resin composition and resist pattern
KR20150095193A (en) Photosensitive element
TW200941138A (en) Photosensitive composition, photosensitive film, photosensitive laminate, method of forming permanent pattern, and printed board
CN101587298B (en) Photosensitive composition, photosensitive film, photosensitive layered body, permanent pattern forming method and printed circuit board
CN100433254C (en) Pattern forming process
WO2007072641A1 (en) Pattern-forming material, pattern-forming apparatus and pattern-forming method
CN101416111B (en) Photosensitive composition, photosensitive film, method of forming permanent pattern, and printed wiring board
KR20120139790A (en) Photosensitive resin composition and photosensitive element using same, resist pattern formation method and printed circuit board manufacturing method
JP4924230B2 (en) Photosensitive resin composition, photosensitive element using the same, resist pattern forming method, and printed wiring board manufacturing method
CN101218546A (en) Pattern forming method
TWI421639B (en) Pattern forming material, pattern forming device, and pattern forming method
CN100478785C (en) Pattern forming method
WO2007032246A1 (en) Material for pattern formation, apparatus for pattern formation, and method for pattern formation
JP2008020500A (en) Photosensitive composition, and pattern forming material and pattern forming method