TWI421639B - Pattern forming material, pattern forming device, and pattern forming method - Google Patents

Pattern forming material, pattern forming device, and pattern forming method Download PDF

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TWI421639B
TWI421639B TW95112640A TW95112640A TWI421639B TW I421639 B TWI421639 B TW I421639B TW 95112640 A TW95112640 A TW 95112640A TW 95112640 A TW95112640 A TW 95112640A TW I421639 B TWI421639 B TW I421639B
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pattern forming
pattern
light
forming material
photosensitive layer
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TW95112640A
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Chinese (zh)
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TW200702931A (en
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Morimasa Sato
Kazumori Minami
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Asahi Kasei E Materials Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

圖案形成材料、及圖案形成裝置、以及圖案形成方法Pattern forming material, pattern forming device, and pattern forming method

本發明係關於一種適用於乾膜光阻(DFR)等之圖案形成材料、以及具備該圖案形成材料的圖案形成裝置、與使用前述圖案形成材料的圖案形成方法。The present invention relates to a pattern forming material suitable for dry film photoresist (DFR) or the like, a pattern forming apparatus including the pattern forming material, and a pattern forming method using the pattern forming material.

自以往以來,在形成配線圖案等圖案時,一直是使用一種藉由在支持體上塗布感光性樹脂組成物並予以乾燥而形成感光層之圖案形成材料。Conventionally, when a pattern such as a wiring pattern is formed, a pattern forming material which forms a photosensitive layer by applying a photosensitive resin composition onto a support and drying it is used.

前述圖案之製造方法,例如,藉由於將被形成前述圖案的銅面積層板等之基體上,積層前述圖案形成材料而形成積層體,並使用光刻技術等來對於該積層體中的前述感光層進行曝光,於該曝光後,再將前述感光層予以顯像而使之形成圖案,然後再進行蝕刻處理等來形成前述之圖案。In the method for producing the pattern, for example, a layered body is formed by laminating the pattern forming material on a substrate such as a copper-area laminate on which the pattern is to be formed, and the photosensitive layer in the laminated body is formed by photolithography or the like. The layer is exposed, and after the exposure, the photosensitive layer is developed to form a pattern, and then an etching treatment or the like is performed to form the pattern.

近年來,電子機器一直被要求如以移動通信機器為代表這樣的小型化、薄型化、輕量化,同時也一直被要求高性能、高機能、高品質、高信賴性;也對於搭載有像這樣的電子機器之電子構件模組要求小型、高密度化,更且隨著大量生產之需求也一直要求提高生產效率。In recent years, electronic devices have been required to be smaller, thinner, and lighter as represented by mobile communication devices, and have been required to have high performance, high performance, high quality, and high reliability. The electronic component modules of electronic machines are required to be small, high-density, and have been required to increase production efficiency with the demand for mass production.

對於前述之圖案形成材料也變得要求高品質、高精細、高密度化;當將前述基體與前述圖案形成材料予以黏著時,為了防止氣泡及微細的雜質(污物)等所引起的黏著不良,因而提案一種在支撐薄膜上具有緩衝層、非黏著性樹脂層及黏著性感光層,藉以改善黏著性而達到形成一使得前述緩衝層和前述黏著性樹脂間的層間黏著力成為最小之高精細的圖案之目的(參照特開2003-307845號公報)。In the above-mentioned pattern forming material, high quality, high definition, and high density are also required. When the substrate and the pattern forming material are adhered, adhesion is prevented in order to prevent bubbles and fine impurities (dirt). Therefore, it is proposed to have a buffer layer, a non-adhesive resin layer, and an adhesive photosensitive layer on the support film, thereby improving adhesion to form a high fineness in which the interlayer adhesion between the buffer layer and the adhesive resin is minimized. The purpose of the pattern (refer to Japanese Laid-Open Patent Publication No. 2003-307845).

但是,在前述專利文獻1中之改善黏著性的情況下,由於在顯像時變得不但要除去前述黏著性感光層而且也必須去除前述黏著性樹脂的緣故,以致顯像時間變長,尚且由於顯像後難免在顯像液中產生浮渣的緣故而使得顯像液容易疲勞,致使會有生產性下降之問題。However, in the case of improving the adhesiveness in the above-mentioned Patent Document 1, it is necessary to remove the above-mentioned adhesive photosensitive layer at the time of development, and it is also necessary to remove the above-mentioned adhesive resin, so that the development time becomes long, and Since it is inevitable that scum is generated in the developing liquid after development, the developing liquid is easily fatigued, which causes a problem of deterioration in productivity.

又,已提案一種藉由提昇於圖案形成材料所使用的感光性組成物之感度,並利用雷射光曝光來改善解像性以得到高精細的圖案(參照特開2002-303971號公報)。Further, a sensitivity of the photosensitive composition used for the pattern forming material has been proposed, and the resolution is improved by laser exposure to obtain a high-definition pattern (refer to Japanese Laid-Open Patent Publication No. 2002-303971).

但是,為了達成使得前述圖案形成材料中所使用的感光性組成物之高感光度的目的,就必須改善前述感光性組成物中所含的化合物之種類、化合物之混合比等以提高感度。當藉由前述之混合等來提高前述感光性組成物在室溫下之熔融黏度時,從圖案形成材料剝離保護薄膜而將圖案形成材料積層在前述基體上之際,會有產生保護薄膜之剝離痕跡、前述感光層從支撐體剝離開來、生產性劣化之問題。However, in order to achieve the high sensitivity of the photosensitive composition used in the pattern forming material, it is necessary to improve the sensitivity of the kind of the compound contained in the photosensitive composition, the mixing ratio of the compound, and the like. When the melt viscosity of the photosensitive composition at room temperature is increased by the above-described mixing or the like, when the protective film is peeled off from the pattern forming material and the pattern forming material is laminated on the substrate, peeling of the protective film occurs. The trace and the photosensitive layer are peeled off from the support, and the productivity is deteriorated.

從而,目前的狀況是:尚未能提供一種可得到適合於前述感光性組成物之熔融黏度的感光性組成物,且於藉由圖案形成材料於基體上形成積層體時不發生保護薄膜之剝離痕跡,並可以平穩地剝離保護薄膜、能夠以良好效率形成圖案、並得到高感度且高精細的圖案之圖案形成材料,以及未能提供一種具備該圖案形成材料之圖案形成裝置、與一種使用前述圖案形成材料之圖案形成方法,所以期望更進一步改善它。Therefore, the current situation is that it is not possible to provide a photosensitive composition which is suitable for the melt viscosity of the photosensitive composition, and does not cause peeling of the protective film when the laminate is formed on the substrate by the pattern forming material. a pattern forming material capable of smoothly peeling off a protective film, capable of forming a pattern with good efficiency, and obtaining a high-sensitivity and high-definition pattern, and failing to provide a pattern forming apparatus having the pattern forming material, and using one of the foregoing The pattern forming method of the pattern forming material is desired to be further improved.

本發明係為鑑於此等現狀而完成者,係以解決習用之前述問題、並達成以下之目的做為課題。也就是說,本發明之目的係在於:提供一種感光性組成物之室溫下的熔融黏度為合適的、且可以抑制感光層之感度下降,同時藉由圖案形成材料於基體上形成積層體時不發生保護薄膜之剝離痕跡,並可以平穩地剝離保護薄膜、能夠以良好效率形成圖案、並得到高感度且高精細的圖案之圖案形成材料,以及提供一種具備該圖案形成材料之圖案形成裝置、與一種使用前述圖案形成材料之圖案形成方法。The present invention has been made in view of the above-mentioned circumstances, and has been made to solve the aforementioned problems and achieve the following objects. That is, the object of the present invention is to provide a photosensitive composition having a melt viscosity at room temperature which is suitable and which can suppress the decrease in sensitivity of the photosensitive layer while forming a laminate on the substrate by the pattern forming material. A pattern forming material capable of smoothly peeling off a protective film, capable of smoothly peeling off a protective film, forming a pattern with good efficiency, and obtaining a high-sensitivity and high-definition pattern, and providing a pattern forming device including the pattern forming material, A pattern forming method of forming a material using the foregoing pattern.

本發明之圖案形成材料,其特徵在於:在支撐體上至少具有感光層,該感光層係由含有鹼可溶性黏合劑、聚合性單體及光聚合起始劑之感光性組成物所構成,該感光性組成物之在30℃~40℃下之熔融黏度為1×104 ~1×107 mPa.s,當將前述感光層予以曝光顯像所得到的圖案厚度變成未曝光狀態的厚度之90%時的在波長405奈米的雷射光下之最少曝光量為20 mJ/cm2以下。The pattern forming material of the present invention is characterized in that at least a photosensitive layer is formed on the support, and the photosensitive layer is composed of a photosensitive composition containing an alkali-soluble binder, a polymerizable monomer, and a photopolymerization initiator. The photosensitive composition has a melt viscosity of from 10 ° C to 40 ° C of from 1 × 10 4 to 1 × 10 7 mPa. s, the minimum exposure amount under laser light having a wavelength of 405 nm when the pattern thickness obtained by subjecting the photosensitive layer to exposure development is 90% of the thickness of the unexposed state is 20 mJ/cm 2 or less.

又,本發明之圖案形成材料,其特徵在於:在支撐體上至少具有感光層,該感光層係由含有鹼可溶性黏合劑、聚合性單體及光聚合起始劑之感光性組成物所構成,前述鹼可溶性黏合劑和前述聚合性單體之總重量的比為1:0.90~1:0.70,當將前述感光層予以曝光顯像所得到的圖案厚度變成未曝光狀態的厚度之90%時的在波長405奈米的雷射光下之最少曝光量為20 mJ/cm2 以下。Further, the pattern forming material of the present invention is characterized in that at least a photosensitive layer is formed on the support, and the photosensitive layer is composed of a photosensitive composition containing an alkali-soluble binder, a polymerizable monomer, and a photopolymerization initiator. The ratio of the total weight of the alkali-soluble binder to the polymerizable monomer is 1:0.90 to 1:0.70, and when the pattern thickness obtained by subjecting the photosensitive layer to exposure development is 90% of the thickness of the unexposed state, The minimum exposure amount under laser light having a wavelength of 405 nm is 20 mJ/cm 2 or less.

本發明之圖案形成裝置,其特徵在於:具備圖案形成材料,由至少具有可照射光之光照射機構、和將來自該光照射機構之光予以調變,並對於前述圖案形成材料中的感光層進行曝光之光調變機構所構成,本發明之圖案形成方法,其特徵在於:至少包括對於圖案形成材料中的該感光層進行曝光、顯像。A pattern forming apparatus according to the present invention is characterized by comprising a pattern forming material, a light irradiation mechanism having at least illuminable light, and a light modulating light from the light irradiation means, and a photosensitive layer in the pattern forming material The light modulation mechanism for performing exposure includes the pattern forming method of the present invention, comprising at least exposing and developing the photosensitive layer in the pattern forming material.

【用以實施發明之最佳態樣】[The best way to implement the invention] (圖案形成材料)(patterning material)

本發明之圖案形成材料,為一種在支撐體上之感光層係由感光性組成物所構成,該感光性組成物之在30℃~40℃下之熔融黏度為1×104 ~1×107 mPa.s,當將前述感光層予以曝光顯像所得到的圖案厚度變成未曝光狀態的厚度之90%時的在波長405奈米的雷射光下之最少曝光量為20 mJ/cm2 以下之圖案形成材料。The pattern forming material of the present invention is characterized in that the photosensitive layer on the support is composed of a photosensitive composition, and the photosensitive composition has a melt viscosity of from 1 × 10 4 to 1 × 10 at 30 ° C to 40 ° C. 7 mPa. s, when the pattern thickness obtained by exposing the photosensitive layer to 90% of the thickness of the unexposed state, the pattern formation of a minimum exposure amount under a laser light having a wavelength of 405 nm is 20 mJ/cm 2 or less material.

<感光性組成物><Photosensitive composition>

前述之感光性組成物,係含有鹼可溶性黏合劑、聚合性單體、光聚合起始劑、及視情況需要而適當選擇的其他成分,當將由該感光性組成物所形成的感光層予以曝光顯像所得到的圖案厚度變成未曝光狀態的厚度之90%時的在波長405奈米的雷射光下之最少曝光量為20 mJ/cm2 以下。The photosensitive composition described above contains an alkali-soluble binder, a polymerizable monomer, a photopolymerization initiator, and other components appropriately selected as occasion demands, and the photosensitive layer formed of the photosensitive composition is exposed. When the thickness of the pattern obtained by the development becomes 90% of the thickness of the unexposed state, the minimum exposure amount under laser light having a wavelength of 405 nm is 20 mJ/cm 2 or less.

-鹼可溶性黏合劑--Alkali Soluble Binder -

前述之鹼可溶性黏合劑,例如,較宜是對於鹼性液為溼潤膨脹性者,更宜是對於鹼性液為可溶性者。The above-mentioned alkali-soluble binder is preferably, for example, a wet-swellable property to an alkaline liquid, and more preferably soluble in an alkaline liquid.

對於鹼性液顯示溼潤膨脹性或溶解性之黏合劑,舉例來說,例如合適的為具有酸性基者。As the binder which exhibits wet expansion or solubility in the alkaline liquid, for example, those having an acidic base are suitable, for example.

前述之酸性基並沒有特別地限定,可以按照目的而適當地選擇,舉例來說,例如其可以是羧基、磺酸基、磷酸基等,此等之中較宜是羧基。The acidic group is not particularly limited and may be appropriately selected depending on the purpose. For example, it may be a carboxyl group, a sulfonic acid group, a phosphoric acid group or the like, and among these, a carboxyl group is preferred.

具有羧基之鹼可溶性黏合劑,舉例來說,例如其可以是具有羧基之乙烯系共聚物、聚胺基甲酸酯樹脂、聚醯胺酸樹脂、改質環氧樹脂等,於此等之中,就對於塗布溶劑之溶解性、對於鹼顯像液之溶解性、合成適性、膜物性之調整容易性等之觀點來看,較宜是具有羧基之乙烯系共聚物。The alkali-soluble binder having a carboxyl group may, for example, be an ethylene-based copolymer having a carboxyl group, a polyurethane resin, a poly-proline resin, a modified epoxy resin, or the like. The ethylene-based copolymer having a carboxyl group is preferred from the viewpoints of solubility in a coating solvent, solubility in an alkali developing solution, suitability, and ease of adjustment of film properties.

前述具有羧基之乙烯系共聚物,舉例來說,例如可以是至少由(1)具有羧基之乙烯系單體、及(2)能夠和此等共聚合之單體藉由共聚合而得者;舉例來說,例如其可以是於特開2005-25841號公報之段落編號〔0164〕至〔0207〕上所記載的化合物。The ethylene-based copolymer having a carboxyl group may, for example, be obtained by copolymerizing at least (1) a vinyl monomer having a carboxyl group, and (2) a monomer copolymerizable with the above; For example, it may be a compound described in Paragraph Nos. [0164] to [0207] of JP-A-2005-25841.

-聚合性單體--Polymerizable monomer -

前述之聚合性單體並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,舉例來說,例如合適者為具有聚胺基甲酸酯基及芳基中之至少一種的單體或寡聚物。又,此等較宜是具有2種以上之聚合性基。The above-mentioned polymerizable monomer is not particularly limited, and may be appropriately selected according to the purpose, but, for example, a monomer having at least one of a polyurethane group and an aryl group is suitable, for example. Or oligomer. Moreover, it is preferable to have two or more types of polymerizable groups.

前述之聚合性基,舉例來說,例如其可以是乙烯性不飽和鍵(例如,(甲基)丙烯醯基、(甲基)丙烯醯胺基、苯乙烯基、乙烯酯及乙烯醚等之乙烯系基、烯丙醚及烯丙酯等之烯丙基等)、可聚合的環狀醚基(例如,環氧基、氧雜環丁基等)等。此等之中,較宜是乙烯性不飽和鍵,舉例來說,例如其可以是於特開2005-258431號公報之段落編號〔0210〕至〔0285〕上所記載的化合物。The above polymerizable group may be, for example, an ethylenically unsaturated bond (for example, (meth) acrylonitrile, (meth) acrylamide, styrene, vinyl, vinyl ether, etc.) A allylic group such as a vinyl group, an allyl ether or an allyl group, or a polymerizable cyclic ether group (for example, an epoxy group or an oxetanyl group). Among these, it is preferably an ethylenically unsaturated bond, and for example, it may be a compound described in Paragraph Nos. [0210] to [0285] of JP-A-2005-258431.

又,為了調整對於後述之感光層進行曝光時的曝光感度及感光波長之目的,除了加入前述之光聚合起始劑以外,尚可以添加增感劑。Further, in order to adjust the exposure sensitivity and the light-sensing wavelength at the time of exposure to the photosensitive layer to be described later, a sensitizer may be added in addition to the photopolymerization initiator described above.

前述之增感劑係可以從可見光線或紫外光及可見光雷射等當中適當地選擇以做為後述之光照射機構。The sensitizer described above can be appropriately selected from visible light, ultraviolet light, visible light laser or the like as a light irradiation mechanism to be described later.

前述之增感劑係可以利用活性能量線而成為激發狀態,藉由與其他的物質(例如,自由基產生劑、酸產生劑等)間之相互作用(例如,能量移動、電子移動等)而產生自由基或酸等之有用基。The sensitizer described above can be excited by an active energy ray, and interacts with other substances (for example, a radical generator, an acid generator, etc.) (for example, energy movement, electron movement, etc.). A useful group for generating a radical or an acid or the like.

前述之增感劑之添加較宜是能夠使得當將前述感光層予以曝光顯像所得到的圖案厚度變成未曝光狀態的厚度之90%時的在波長405奈米的雷射光下之最少曝光量,成為在20 mJ/cm2 以下。The addition of the aforementioned sensitizer is preferably a minimum exposure amount under laser light having a wavelength of 405 nm when the thickness of the pattern obtained by subjecting the photosensitive layer to exposure development becomes 90% of the thickness of the unexposed state. It becomes 20 mJ/cm 2 or less.

前述之增感劑並沒有特別地限定,可以從公知的增感劑之中適當地選取;舉例來說,例如其可以是公知的多核芳香族類(例如,芘、苝、三鄰亞苯)、呫噸類(例如,螢光素、曙紅、紅黴素、若丹明B、孟加拉玫瑰紅)、花青類(例如,吲喹啉羰花青、硫喹啉羰花青、喹啉羰花青)、部花青類(例如,部花青、羰部花青)、噻 類(例如,勞氏紫、亞甲基藍、甲苯胺藍)、吖啶類(例如,吖啶橙、氯黃素、吖黃素)、蒽醌類(例如,蒽醌)、方形鎓類(例如,方形鎓)、吖啶酮類(例如,吖啶酮、氯吖啶酮、N-甲基吖啶酮、N-丁基吖啶酮、N-丁基-氯吖啶酮、2-氯-10-丁基吖啶酮等)、香豆素類(例如,3-(2-苯并呋喃醯基)-7-二乙基胺基香豆素、3-(2-苯并呋喃醯基)-7-(1-吡咯啶基)香豆素、3-苯甲醯基-7-二乙基胺基香豆素、3-(2-甲氧基苯甲醯基)-7-二乙基胺基香豆素、3-(4-二甲基胺基苯甲醯基)-7-二乙基胺基香豆素、3,3’-羰基雙(5,7-二-n-羧基香豆素)、3,3’-羰基雙(7-二乙基胺基香豆素)、3-苯甲醯基-7-甲氧基香豆素、3-(2-呋喃醯基)-7-二乙基胺基香豆素、3-(4-二乙基胺基肉桂醯基)-7-二乙基胺基香豆素、7-甲氧-3-(3-吡啶基羰基)香豆素、3-苯甲醯基-5,7-二丙氧基香豆素等,另外於特開平5-19475號、特開平7-271028號、特開2002-363206號、特開2002-363207號、特開2002-363208號、特開2002-363209號等之各公報上所記載的香豆素化合物等)。The aforementioned sensitizer is not particularly limited and may be appropriately selected from known sensitizers; for example, it may be a well-known polynuclear aromatic compound (for example, ruthenium, osmium, tri-o-phenylene). , xanthene (for example, luciferin, eosin, erythromycin, rhodamine B, rose bengal), cyanine (for example, quinolinol carbocyanine, thioquinoline carbocyanine, quinoline Carnation cyanine), merocyanines (eg, merocyanine, carbocyanine), thianes (eg, Lloyd's violet, methylene blue, toluidine blue), acridines (eg, acridine orange, chloroform) , quercetin), terpenoids (eg, quinone), square steroids (eg, square 鎓), acridone (eg, acridone, chloroacridone, N-methylacridone) , N-butylacridone, N-butyl-chloroacridone, 2-chloro-10-butylacridone, etc.), coumarins (for example, 3-(2-benzofuran) - 7-diethylamino coumarin, 3-(2-benzofuranyl)-7-(1-pyrrolidinyl)coumarin, 3-benzylidene-7-diethyl Amino coumarin, 3-(2-methoxybenzimidyl)-7-diethylamine Coumarin, 3-(4-dimethylaminobenzimidyl)-7-diethylamino coumarin, 3,3'-carbonyl bis(5,7-di-n-carboxycoumarin ,3,3'-carbonylbis(7-diethylaminocoumarin), 3-benzylidene-7-methoxycoumarin, 3-(2-furanyl)-7 -diethylamino coumarin, 3-(4-diethylaminocinnamino)-7-diethylamino coumarin, 7-methoxy-3-(3-pyridylcarbonyl) Coumarin, 3-benzylidene-5,7-dipropoxycoumarin, etc., in addition to Japanese Patent Laid-Open No. 5-19475, JP-A-7-271028, JP-A-2002-363206, JP-2002 The coumarin compound or the like described in each of the publications of JP-A-2002-363208, JP-A-2002-363209, and the like.

前述之光聚合起始劑和前述之增感劑的組合,舉例來說,例如其可以是特開2001-305734號公報上所記載的電子移動型起始劑〔(1)電子供給起始劑及增感色素、(2)電子接受型起始劑及增感色素、(3)電子供給型起始劑、增感色素及電子接受型起始劑(三元起始系)〕等之組合。The combination of the photopolymerization initiator and the sensitizer described above is, for example, an electron-transporting initiator as described in JP-A-2001-305734 [(1) Electron supply initiator And a combination of sensitizing dyes, (2) electron-accepting initiators and sensitizing dyes, (3) electron-donating initiators, sensitizing dyes, and electron-accepting initiators (ternary starting systems) .

前述之增感劑之含有量,相對於感光性樹脂組成物的全部成分計,較宜是0.05~30質量%,更宜是0.1~20質量%,特別理想是0.2~10質量%。當該含有量為小於0.05質量%時,對於活性能量線之感度就會下降、曝光程序就會較花時間、且生產性會下降,而當超過30質量%時,於保存時前述之增感劑就會有從前述感光層析出的情形。The content of the sensitizer is preferably 0.05 to 30% by mass, more preferably 0.1 to 20% by mass, particularly preferably 0.2 to 10% by mass, based on the total components of the photosensitive resin composition. When the content is less than 0.05% by mass, the sensitivity to the active energy ray is lowered, the exposure process takes time, and the productivity is lowered, and when it exceeds 30% by mass, the aforementioned sensitization during storage The agent will be chromatographed from the aforementioned photoreceptor.

前述之光聚合起始劑可以單獨使用1種,也可以併用2種以上。The photopolymerization initiator may be used singly or in combination of two or more.

前述之光聚合起始劑之特佳的例子,舉例來說,例如其可以是在後述之曝光中能夠對應於波長為405奈米之雷射光之前述氧化膦類、前述α-胺基烷基酮類、具有前述三骨架的鹵化烴化合物、與後述之做為增感劑的胺化合物組合而成的複合光起始劑、六芳基聯咪唑化合物、或鈦金屬茂等。Particularly preferred examples of the photopolymerization initiator are, for example, the above-mentioned phosphine oxides, the aforementioned α-aminoalkyl group which can correspond to laser light having a wavelength of 405 nm in the exposure described later. A ketone, a halogenated hydrocarbon compound having the above three skeletons, a composite photoinitiator in combination with an amine compound which is a sensitizer described later, a hexaarylbiimidazole compound, or a titanium metallocene.

前述之光聚合起始劑在感光性組成物中的含有量較宜是0.5~20質量%,更宜是1~15質量%,特別理想為2~10質量%。The content of the photopolymerization initiator in the photosensitive composition is preferably 0.5 to 20% by mass, more preferably 1 to 15% by mass, particularly preferably 2 to 10% by mass.

-其他的成分--Other ingredients -

前述之其他的成分,舉例來說,例如其可以是熱聚合禁止劑、可塑劑、發色劑、著色劑等;更且也可以進一步地併用基材表面之密接促進劑及其他的助劑類(例如,顏料、導電性粒子、充填劑、消泡劑、難燃劑、整平劑、剝離促離劑、抗氧化劑、香料、熱交聯劑、表面張力調整劑、連移動劑等)。此等之化合物,舉例來說,例如其可以是特開2005-258431號公報之段落編號〔0316〕到〔0336〕所記載的化合物等;藉由適當地含有此等成分,即可以達到調整圖案形成材料之安定性、寫真性、燒出性、膜物性等性質之目的。The other components mentioned above may be, for example, a thermal polymerization inhibitor, a plasticizer, a color former, a colorant, etc.; and further, a adhesion promoter and other auxiliary agents on the surface of the substrate may be further used in combination. (for example, pigments, conductive particles, fillers, antifoaming agents, flame retardants, levelers, release inhibitors, antioxidants, perfumes, thermal crosslinking agents, surface tension modifiers, moving agents, etc.). For example, the compound may be, for example, the compound described in paragraphs [0316] to [0336] of JP-A-2005-258431; by appropriately containing such components, an adjustment pattern can be achieved. The purpose of forming the properties of the material such as stability, photogenicity, burning property, and film properties.

<感光性組成物之熔融黏度><The melt viscosity of the photosensitive composition>

前述之感光性組成物之熔融黏度並沒有特別地限定,可以按照目的需要而適當地選擇,舉例來說,例如,在30℃~40℃下之感光性組成物的熔融黏度、使用塗布裝置將前述感光性組成物溶液而塗布於支撐體上時之熔融黏度。The melt viscosity of the photosensitive composition is not particularly limited, and may be appropriately selected according to the purpose, for example, the melt viscosity of the photosensitive composition at 30 ° C to 40 ° C, using a coating device The melt viscosity when the photosensitive composition solution is applied to a support.

前述之熔融黏度之值並沒有特別地限定,可以按照目的需要而適當地選擇,舉例來說,例如在30℃~40℃下,較宜是1×104 ~1×107 mPa.s,更宜是1×105 ~1×107 mPa.s,當前述之熔融黏度為小於1×104 Pa.s時,就會變得過軟,而在從圖案形成材料剝離保護薄膜之際會產生剝離痕跡的情形,當超過1×107 mPa.s時,積層機能就會下降、積層時之柔軟性欠佳而不能均一地積層,且從支撐體剝離保護薄膜時,前述之感光層也會同時從支撐體被剝離開來。The value of the melt viscosity is not particularly limited and may be appropriately selected according to the purpose, for example, at 30 ° C to 40 ° C, preferably 1 × 10 4 ~ 1 × 10 7 mPa. s, more preferably 1 × 10 5 ~ 1 × 10 7 mPa. s, when the aforementioned melt viscosity is less than 1 × 10 4 Pa. When s, it will become too soft, and peeling marks will occur when the protective film is peeled off from the pattern forming material, when it exceeds 1 × 10 7 mPa. In the case of s, the build-up function is lowered, the flexibility at the time of lamination is not good, and the laminate is not uniformly formed, and when the protective film is peeled off from the support, the above-mentioned photosensitive layer is simultaneously peeled off from the support.

-熔融黏度之測定-- Determination of melt viscosity -

前述之熔融黏度之測定係使用黏度計進行測定。前述之黏度計並沒有特別地限定,可以按照目的而適當地選擇,舉例來說,例如(1)其可以是依照哈根波伊索勒法則而求出-定量的試料通過毛細管流出所需要的時間之毛細管黏度計;(2)依照史托克法則而求山試料中物體落下速度或氣泡上昇速度之氣泡黏度計、落體黏度計、赫普勒黏度計、黏滯度計;(3)求出流体中之物体所接受的黏度阻度之旋轉黏度計、振動黏度計、平板黏度計及血流動速度計等。The aforementioned measurement of the melt viscosity was carried out using a viscometer. The viscosity meter described above is not particularly limited and may be appropriately selected depending on the purpose. For example, (1) it may be determined according to the Hagen-Poisol method to determine the amount of the sample required to flow out through the capillary. Capillary viscometer for time; (2) Bubble viscometer, drop viscometer, Heppler viscometer, viscosity meter for the falling velocity or bubble rising velocity of the specimen in the mountain sample according to the Stoke rule; (3) Rotational viscometer, visco viscometer, plate viscometer, and blood flow velocity meter for viscosity resistance received by objects in the fluid.

前述之感光性組成物溶液之塗布方法,舉例來說,例如其可以是噴灑法、輥塗法、旋轉塗布法、狹縫塗布法、浸蝕塗布法、廉幕塗布法、模具塗布法、凹塗法、線塗法、刮刀塗布法等之各種塗布方法。The coating method of the photosensitive composition solution may be, for example, a spray method, a roll coating method, a spin coating method, a slit coating method, an etching coating method, an air curtain coating method, a die coating method, or a concave coating method. Various coating methods such as a method, a wire coating method, and a knife coating method.

前述之塗布裝置並沒有特別地限定,可以按照目的需要而適當地選擇,舉例來說,例如可以是將塗布液予以混合而自動進行塗布的分散器系統、斯塔克混合機、微型混合機、管內混合裝置、送液裝置等加以組合之塗布裝置等。The coating apparatus described above is not particularly limited, and may be appropriately selected according to the purpose, and may be, for example, a disperser system in which a coating liquid is mixed and automatically applied, a Stark mixer, a micro mixer, A coating device or the like in which a tube mixing device, a liquid feeding device, and the like are combined.

前述塗布後所形成的感光層之乾燥,雖然是按照各成分、溶劑的種類、使用比例等而不同,然而,例如,可以在60~110℃之溫度下,藉由乾燥裝置乾燥30秒~15分鐘而使之乾燥。The drying of the photosensitive layer formed after the application is different depending on the components, the type of the solvent, the ratio of use, and the like. However, for example, it can be dried by a drying device at a temperature of 60 to 110 ° C for 30 seconds to 15 seconds. Allow it to dry in minutes.

-支撐體-- Support -

前述之支撐體並沒有特別地限定,可以視目的需要而適當地選擇,然而較宜是可以剝離前述之感光層、且光透射性良好之物;更宜是表面平滑性良好之物。The above-mentioned support is not particularly limited, and may be appropriately selected depending on the purpose. However, it is preferable that the photosensitive layer can be peeled off and the light transmittance is good, and it is more preferable that the surface is excellent in smoothness.

前述之支撐體較宜是合成樹脂且為透明之物,舉例來說,例如其可以是聚對酞酸乙二酯、聚葉酸乙二酯、聚丙烯、聚乙烯、三乙酸纖維素、二乙酸纖維素、(甲基)丙烯酸烷酯、聚(甲基)丙烯酸酯共聚物、聚氯乙烯、聚乙烯醇、聚碳酸酯、聚苯乙烯、賽珞玢、聚氯亞乙烯共聚物、聚醯胺、聚醯亞胺、氯乙烯.乙酸乙烯酯共聚物、聚四氟乙烯、聚三氟乙烯、纖維素系薄膜、耐綸薄膜等之各種塑膠薄膜。此等係可以1種單獨使用,也可以併用2種以上。The aforementioned support is preferably a synthetic resin and is transparent. For example, it may be polyethylene terephthalate, polyethylene folate, polypropylene, polyethylene, cellulose triacetate, diacetic acid. Cellulose, alkyl (meth)acrylate, poly(meth)acrylate copolymer, polyvinyl chloride, polyvinyl alcohol, polycarbonate, polystyrene, cellophane, polyvinyl chloride copolymer, polyfluorene Amine, polyimine, vinyl chloride. Various plastic films such as vinyl acetate copolymer, polytetrafluoroethylene, polytrifluoroethylene, cellulose film, and nylon film. These may be used alone or in combination of two or more.

另外,前述之支撐體,例如,可以使用於特開平4-20894號公報、特開平5-80503號公報、特開平5-173320號公報、特開平5-72724號公報等上所記載的支撐體。In addition, the support body described in the above-mentioned support can be used, for example, in the above-mentioned support, which is described in Japanese Laid-Open Patent Publication No. Hei 5- No. Hei. .

前述之支撐體的厚度,並沒有特別地限定,可以視目的需要而適當地選擇;例如,較宜是4~300微米,更宜是5~175微米。The thickness of the aforementioned support is not particularly limited and may be appropriately selected depending on the purpose; for example, it is preferably 4 to 300 μm, more preferably 5 to 175 μm.

前述支撐體的形狀並沒有特別地限定,可以視目的需要而適當地選擇;例如,較宜是長條狀。前述長條狀之支撐體的長度,並沒有特別地限定,舉例來說,例如其可以是10公尺~20000公尺。The shape of the aforementioned support body is not particularly limited, and may be appropriately selected depending on the purpose; for example, it is preferably elongated. The length of the aforementioned elongated support is not particularly limited, and for example, it may be from 10 meters to 20,000 meters.

-感光層--Photosensitive layer -

前述感光性薄膜中用以設置前述感光層的位置並沒有特別地限定,係可以按照目的而適當地選擇,通常是被積層在前述支撐體上。The position at which the photosensitive layer is provided in the photosensitive film is not particularly limited, and may be appropriately selected depending on the purpose, and is usually laminated on the support.

前述感光層的厚度並沒有特別地限定,係可以按照目的需要而適當地選擇,例如,宜為3~100微米,較宜是5~70微米。The thickness of the photosensitive layer is not particularly limited and may be appropriately selected according to the purpose, and is, for example, preferably from 3 to 100 μm, more preferably from 5 to 70 μm.

前述之感光層,較宜是在後述之曝光步驟中,在藉由具有n個接受來自光照射機構之光而受光射出的圖素部之光調變機構進行光的調變之後,再利用通過已配置具有可以補正因前述圖素部中之射出面的畸變所引起之像差的非球面之微透鏡的微透鏡陣列之光,來進行曝光。In the above-mentioned photosensitive layer, it is preferable to perform light modulation by a light modulation mechanism having n pixel portions that receive light emitted from the light irradiation means, and then reuse the light. Exposure is performed by arranging light of a microlens array having aspherical microlenses that can correct aberrations due to distortion of the exit surface in the pixel portion.

<其他層><other layer>

前述之其他層並沒有特別地限定,可以視目的需要而適當地選擇;舉例來說,例如形成保護薄膜、緩衝層、氧遮斷層(PC層)、剝離層、黏著層、光吸收層、表面保護層等層之步驟等。The other layers described above are not particularly limited and may be appropriately selected depending on the purpose; for example, a protective film, a buffer layer, an oxygen barrier layer (PC layer), a release layer, an adhesive layer, a light absorbing layer, and a surface are formed. The steps of protecting the layers and the like.

前述之緩衝層於常溫下不具有黏性,在真空及加熱條件下積層的情況係為熔融流動之層。前述PC層通常是以聚乙烯醇做為主成分而形成的`1.5微米。The buffer layer described above does not have a viscosity at normal temperature, and the layer is formed as a layer of melt flow under vacuum and heating conditions. The aforementioned PC layer is usually formed of polyvinyl alcohol as a main component of 1.5 micrometers.

-保護薄膜-- Protective film -

前述保護薄膜可以防止前述感光層污漬及損傷,並具有保護功能。The protective film can prevent the above-mentioned photosensitive layer from being stained and damaged, and has a protective function.

前述保護薄膜之被設置在前述圖案形成材料中的位置,並沒有特別地限定,可以視目的需要而適當地選擇;通常是設置在前述感光層之上。The position of the protective film to be disposed in the pattern forming material is not particularly limited and may be appropriately selected depending on the purpose; it is usually provided on the photosensitive layer.

前述之保護薄膜,舉例來說,例如其可以是使用於前述支撐體上之物、聚矽氧紙、以聚丙烯或聚乙烯積層而成之紙、聚烯烴或聚四氟乙烯片等。此等之中,較佳為聚乙烯薄膜、聚丙烯薄膜。The protective film may be, for example, a material used on the support, a polyoxynized paper, a paper laminated with polypropylene or polyethylene, a polyolefin or a polytetrafluoroethylene sheet, or the like. Among these, a polyethylene film or a polypropylene film is preferred.

前述保護薄膜之厚度並沒有特別地限定,可以按照目的而適當地選擇;例如,較宜是5~100微米,更宜是8~30微米。The thickness of the protective film is not particularly limited and may be appropriately selected depending on the purpose; for example, it is preferably 5 to 100 μm, more preferably 8 to 30 μm.

在使用前述之保護薄膜的情況下,前述感光層與前述支撐體間之黏著力A、和前述感光層與保護薄膜間之黏著力B,較宜是具有:黏著力A>黏著力B之關係。In the case of using the protective film described above, the adhesive force A between the photosensitive layer and the support and the adhesive force B between the photosensitive layer and the protective film preferably have the relationship of adhesive force A and adhesive force B. .

前述支撐體與保護膜之組合(支撐體/保護膜),舉例來說,例如其可以是(聚對酞酸乙二酯/聚丙烯)、(聚對酞酸伸乙二酯/聚乙烯)、(聚氯乙烯/賽珞玢)、(聚醯亞胺/聚丙烯)、及(聚對酞酸乙二酯/聚對酞酸乙二酯)。又,藉由對支撐體及保護膜中之至少任一者進行表面處理,可以使得黏著力滿足上述之關係。前述支撐體之表面處理,舉例來說,例如其可以塗設下塗層、電暈放電處理、火燄處理、紫外線照射處理、於增強對感光層之黏著強度;表面處理之實例包括底塗層沈積、高頻波照射處理、輝光放電處理、活性電漿照射處理、以及雷射光線處理等。The combination of the foregoing support and the protective film (support/protective film), for example, may be (polyethylene terephthalate/polypropylene) or (polyethylene terephthalate/polyethylene) , (polyvinyl chloride / cellophane), (polyimide / polypropylene), and (polyethylene terephthalate / polyethylene terephthalate). Further, by performing surface treatment on at least one of the support and the protective film, the adhesive force can satisfy the above relationship. The surface treatment of the support body is, for example, an undercoat layer, a corona discharge treatment, a flame treatment, an ultraviolet irradiation treatment, and an adhesion strength to the photosensitive layer; and an example of the surface treatment includes the undercoat layer deposition. High-frequency wave irradiation treatment, glow discharge treatment, active plasma irradiation treatment, and laser light treatment.

又,前述支撐體與前述保護薄膜間之靜摩擦係數較佳為0.3~1.4,更佳為0.5~1.2。Further, the static friction coefficient between the support and the protective film is preferably from 0.3 to 1.4, more preferably from 0.5 to 1.2.

當前述之靜摩擦係數小於0.3時,由於滑動性過高的緣故,在形成捲筒的情況下就可能產生捲繞間隙;而當超過1.4時,就會難以捲成良好的捲筒狀。When the aforementioned static friction coefficient is less than 0.3, the winding gap may be generated in the case of forming a reel due to excessive slidability; and when it exceeds 1.4, it is difficult to roll into a good reel shape.

前述之圖案形成材料,例如,捲曲成圓筒狀的捲芯,較宜是長條狀的捲筒狀。前述之長條狀的圖案形成材料之長度,並沒有特別地限定,例如,可以從10公尺~20,000公尺範圍中適當地選取。又,為了讓使用者容易使用,也可以進行細縫加工而形成捲筒狀之100公尺~1,000公尺範圍的長條體。另外,在此情況下,較宜是將前述之支撐體捲在最外側。又,也可以將前述之捲筒狀圖案形成材料細分成薄片狀。保管時,從端面保護、防止侵蝕的觀點來看,較宜是在端面上設置隔離物(特別是防溼性物、裝有乾燥劑之物),又且也較宜使用梱包用及透溼性低的素材。The pattern forming material described above, for example, a core wound in a cylindrical shape, is preferably in the form of a long roll. The length of the long strip-shaped pattern forming material is not particularly limited, and may be appropriately selected from, for example, a range of 10 meters to 20,000 meters. Further, in order to make it easy for the user to use, it is also possible to form a long strip having a roll shape ranging from 100 meters to 1,000 meters in a slit shape. Further, in this case, it is preferable to wind the aforementioned support body to the outermost side. Further, the above-described rolled pattern forming material may be subdivided into a sheet shape. When storing, from the viewpoint of end face protection and corrosion prevention, it is preferable to provide a separator (especially a moisture-proof substance and a desiccant) on the end surface, and it is also preferable to use a bag and a moisture-permeable bag. Low material.

為了調整保護薄膜與感光層間之黏著性質,保護薄膜也可以接受表面處理。前述之表面處理,例如,可以在保護薄膜表面上形成一由聚有機矽氧烷、氟化聚烯烴、聚氟乙烯、與聚乙烯醇等之聚合物構成的底塗層。該底塗層之形成可以是在將前述聚合物之塗布液塗布於保護薄膜表面之後,再藉由於30℃至150℃(特別是50℃至120℃)下進行乾燥1至30分鐘而形成。In order to adjust the adhesion between the protective film and the photosensitive layer, the protective film can also be subjected to surface treatment. In the foregoing surface treatment, for example, an undercoat layer composed of a polymer of polyorganosiloxane, fluorinated polyolefin, polyvinyl fluoride, and polyvinyl alcohol may be formed on the surface of the protective film. The undercoat layer may be formed by applying the coating liquid of the above polymer to the surface of the protective film, followed by drying at 30 ° C to 150 ° C (especially 50 ° C to 120 ° C) for 1 to 30 minutes.

本發明的圖案形成材料,係為一種其感光性組成物在室溫下之熔融黏度適當,且能夠抑制感光層之感度下降,同時在以圖案形成材料形成基体上之積層體時,亦不發生保護薄膜的剝離性痕跡,並可以平穩地剝離保護薄膜,以及得到高感度且高精細的圖案之圖案形成材料。因此,可以廣泛地使用來做為印刷版配線板、彩色濾光片、柱材、肋材、間隔物、隔壁等之液晶顯示器用組件、全息照相、微機器、驗證等之圖案形成用,且能夠適合使用於本發明之圖案及其形成方法上。The pattern forming material of the present invention is one in which the photosensitive composition has a suitable melt viscosity at room temperature, and can suppress the decrease in the sensitivity of the photosensitive layer, and does not occur when the layered body on the substrate is formed by the pattern forming material. The peeling property of the protective film is protected, and the protective film can be smoothly peeled off, and a pattern forming material of a high-sensitivity and high-definition pattern can be obtained. Therefore, it can be widely used as a pattern for a liquid crystal display device such as a printed wiring board, a color filter, a pillar, a rib, a spacer, a partition, or the like, a hologram, a micromachine, a verification, or the like, and It can be suitably used in the pattern of the present invention and its formation method.

<圖案及圖案形成方法><pattern and pattern forming method>

本發明之圖案係藉由利用本發明之圖案形成方法而製得的。The pattern of the present invention is produced by using the pattern forming method of the present invention.

本發明之圖案形成方法之第1態樣,係將本發明之感光性組成物塗布在基材表面上,並進行乾燥而形成感光層,然後再進行曝光顯像。In the first aspect of the pattern forming method of the present invention, the photosensitive composition of the present invention is applied onto the surface of a substrate, dried to form a photosensitive layer, and then subjected to exposure development.

又,本發明之圖案形成方法的第2態樣,係在加熱及加壓中至少任一者之下,本發明之圖案形成材料積層在基材表面上,然後再進行曝光顯像。Further, in the second aspect of the pattern forming method of the present invention, at least one of heating and pressurization, the pattern forming material of the present invention is laminated on the surface of the substrate, and then exposure development is performed.

以下,透過本發明之圖案形成方法的說明,以使得本發明之圖案更為詳細明白。Hereinafter, the description of the pattern forming method of the present invention will be made to make the pattern of the present invention more detailed.

-基材--Substrate -

前述之基材並沒有特別地限定,係可以從公知材料中適當地選擇表面平滑性高至具有凹凸表面之物;然而較宜是板狀基體(基板);具體而言,舉例來說,例如其可以是公知的印刷電路形成用基板(例如,覆銅積層板)、玻璃板(例如,鹼玻璃板等)、合成樹脂樹脂性之薄膜、紙、金屬板等。此等之中,較宜是印刷配線板形成用基板,從可以在多層配線基板或組裝配線基板等進行半導體等之高密度實裝化之點來看,特佳為該印刷配線板形成用基板係配線圖案已形成完畢之物。The above-mentioned substrate is not particularly limited, and a material having a surface smoothness as high as having a concave-convex surface can be appropriately selected from known materials; however, it is preferably a plate-like substrate (substrate); specifically, for example, for example, It may be a known substrate for forming a printed circuit (for example, a copper clad laminate), a glass plate (for example, an alkali glass plate), a synthetic resin resin film, paper, a metal plate, or the like. Among these, it is preferable that the substrate for forming a printed wiring board is a substrate for forming a printed wiring board from the viewpoint of performing high-density mounting of a semiconductor or the like on a multilayer wiring board or an assembly wiring board. The wiring pattern has been formed.

前述基材,係可以使用在該基材上由前述感光性組成物形成感光層而構成的積層體來當做前述之第1態樣,或者使用將前述圖案形成材料中的感光層予以重疊所積層而形成的積層體。也就是說,可以對於前述積層體中的前述感光層進行下述之曝光,並使經曝光的區域硬化,藉由後述之顯像來形成圖案。In the above-mentioned substrate, a laminate formed by forming a photosensitive layer on the substrate may be used as the first aspect described above, or a layer in which the photosensitive layer in the pattern forming material is overlapped may be used. And the formation of the laminate. In other words, the photosensitive layer in the laminated body may be subjected to the following exposure, and the exposed region may be cured to form a pattern by development as described later.

-積層體--Laminar body -

前述之第1態樣的積層體之形成方法並沒有特別地限定,可以視目的需要而適當地選擇;較宜是積層由在前述之基材上塗布及乾燥前述感光性組成物而形成的感光層。The method for forming the laminate according to the first aspect described above is not particularly limited, and may be appropriately selected depending on the purpose. It is preferable that the laminate is formed by coating and drying the photosensitive composition on the substrate. Floor.

前述塗布及乾燥的方法並沒有特別地限定,可以視目的需要而適當地選擇;舉例來說,例如可以是在形成前述圖案形成材料中的感光層時進行,可以前述感光性組成物溶液之塗布及乾燥相同的方法來進行,舉例來說,例如使用旋塗機、狹縫塗布機、輥塗機、模塗機、廉幕塗布機等來塗布該感光性組成物溶液之方法。The coating and drying method is not particularly limited and may be appropriately selected depending on the purpose. For example, it may be carried out when the photosensitive layer in the pattern forming material is formed, and the photosensitive composition solution may be applied. The same method as drying is carried out, for example, a method of applying the photosensitive composition solution by using a spin coater, a slit coater, a roll coater, a die coater, an air curtain coater or the like.

前述之第2態樣的積層體之形成方法並沒有特別地限定,可以視目的需要而適當地選擇;較宜是一邊進行加熱及加壓中之至少任一種,一邊將前述圖案形成材料積層在前述基材上。另外,在前述之圖案形成材料為具有前述保護薄膜的情況下,較宜是將該保護薄膜予以剝離,並使前述感光層重疊地積層於前述基材上。The method for forming the laminate of the second aspect described above is not particularly limited, and may be appropriately selected depending on the purpose. It is preferable to laminate the pattern forming material while performing at least one of heating and pressurization. On the aforementioned substrate. Further, in the case where the pattern forming material has the protective film, it is preferred that the protective film is peeled off and the photosensitive layer is laminated on the substrate.

前述之加熱溫度並沒有特別地限定,可以按照目的需要而適當地選擇,然而,例如,較宜是70~130℃,更宜是80~110℃。The above heating temperature is not particularly limited and may be appropriately selected depending on the purpose, however, for example, it is preferably 70 to 130 ° C, more preferably 80 to 110 ° C.

前述加壓之壓力並沒有特別地限定,可以按照目的需要而適當地選擇,然而,例如,較宜是0.01~1.0 MPa,更宜是0.05~1.0 MPa。The pressure of the pressurization is not particularly limited and may be appropriately selected according to the purpose, but is, for example, preferably 0.01 to 1.0 MPa, more preferably 0.05 to 1.0 MPa.

進行前述之加熱及加壓中的至少任一種之裝置,並沒有特別地限定,可以按照目的需要而適當地選擇,然而,舉例來說,例如適合使用熱軋機、熱輥積層機(例如,大成積層機公司製,VP-II)、真空積層機(例如,名機製作所製,MVLP500)等。The apparatus for performing at least any of the above-described heating and pressurization is not particularly limited and may be appropriately selected according to the purpose, but, for example, for example, a hot rolling mill or a hot roll laminator is suitably used (for example, Manufactured by Daisuke Machine Co., Ltd., VP-II), vacuum laminator (for example, MVLP500, manufactured by Nihon Machine Co., Ltd.).

<曝光><exposure>

進行前述曝光之目的,係為了使前述感光層感光而形成硬化部分及未硬化部分。The purpose of the above-described exposure is to form a cured portion and an uncured portion in order to expose the photosensitive layer.

前述曝光之對象只要是具有感光層的材料即可,並沒有特別地限定,可以視目的需要而適當地選擇;例如,較宜是對於在基材上之前述感光性組成物或由前述圖案形成材料所形成的前述積層體來進行。The object to be exposed is not particularly limited as long as it is a material having a photosensitive layer, and may be appropriately selected depending on the purpose; for example, it is preferably formed on or formed from the aforementioned photosensitive composition on a substrate. The laminate formed by the material is carried out.

前述積層體之曝光並沒有特別地限定,係可按照目的需要而適當地選擇,舉例來說,例如其可以透過前述支撐體、緩衝層及PC層而將前述感光層予以曝光;也可以在剝離前述支撐體之後,再透過前述緩衝層及PC層而將前述感光層予以曝光;亦可以在剝離前述支撐體及前述緩衝層之後,再透過PC層而將前述感光層予以曝光;也可以在剝離前述支撐體、前述緩衝層及PC層之後,再將前述感光層予以曝光。The exposure of the laminate is not particularly limited, and may be appropriately selected according to the purpose. For example, the photosensitive layer may be exposed through the support, the buffer layer, and the PC layer, or may be peeled off. After the support, the photosensitive layer is exposed through the buffer layer and the PC layer; after the support and the buffer layer are peeled off, the photosensitive layer may be exposed through the PC layer; or may be peeled off. After the support, the buffer layer, and the PC layer, the photosensitive layer is exposed.

前述之曝光雖然並沒有特別地限定,可以按照目的需要而適當地選擇,然而,例如,較宜是數位曝光、類比曝光等;此等之中較佳為數位曝光。Although the aforementioned exposure is not particularly limited, it may be appropriately selected according to the purpose, however, for example, it is preferably a digital exposure, an analog exposure, or the like; among these, digital exposure is preferred.

前述之數位曝光並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,例如,較宜是基於所形成的圖案形成資訊而產生控制信號,並使用按照該控制信號所調變的光來進行。The aforementioned digital exposure is not particularly limited, and may be appropriately selected according to the needs of the object. However, for example, it is preferable to generate a control signal based on the formed pattern forming information, and to use light modulated according to the control signal. Come on.

前述之數位曝光的機構,雖然並沒有特別地限定,可以按照目的需要而適當地選擇,然而,例如,較宜是基於照射光之光照射機構、形成的圖案形成資訊,來調變從該光照射機構所照射的光之光調變機構。The above-described digital exposure mechanism is not particularly limited and may be appropriately selected according to the purpose. However, for example, it is preferable to modulate the light from the light based on the light irradiation mechanism of the illumination light and the formed pattern formation information. The light modulation mechanism of the light irradiated by the illumination mechanism.

<光調變機構><Light modulation mechanism>

前述之光調變機構,只要是能夠調變光即可並沒有特別地限定,可以按照目的需要而適當地選擇,舉例來說,例如合適者為具有n個圖素部。The above-described light modulation means is not particularly limited as long as it can modulate light, and can be appropriately selected according to the purpose. For example, it is preferable to have n pixel parts.

前述之具有n個圖素部之光調變機構並沒有特別地限定,可以視目的需要而適當地選擇;舉例來說,例如,較宜是空間光調變元件。The above-described light modulation mechanism having n pixel portions is not particularly limited and may be appropriately selected depending on the purpose; for example, it is preferably a spatial light modulation element.

前述之空間光調變元件,舉例來說,例如適合者有數位微鏡片裝置(DMD)、MEMS(Micro Electro Mechanical Systems,微電子機械系統)型的空間光調變元件(SLM,Special Light Modulator;特殊光調變器)、藉由電光學效果調變透射光的光學元件(PLZT元件)、液晶光快門(FLC)等;於此等之中,舉例來說,例如較佳為DMD。For example, a spatial light modulation device (SLM, Special Light Modulator) having a digital microlens device (DMD) or a MEMS (Micro Electro Mechanical Systems) type is suitable. A special optical modulator), an optical element (PLZT element) that modulates transmitted light by an electro-optical effect, a liquid crystal shutter (FLC), etc., among which, for example, a DMD is preferable.

又,前述之光調變機構較宜是具有基於形成的圖案資訊而廠生控制信號的圖案信號生成機構。在此情況下,前述之光調變機構可隨著前述圖案信號生成機構所產生的控制信號來調變光。Further, the optical modulation mechanism described above is preferably a pattern signal generating means having a factory control signal based on the formed pattern information. In this case, the optical modulation mechanism described above can modulate the light with a control signal generated by the pattern signal generating means.

前述之控制信號並沒有特別地限定,可以視目的需要而適當地選擇;舉例來說,例如合適者為數位信號。The aforementioned control signal is not particularly limited and may be appropriately selected depending on the purpose of the object; for example, a suitable one is a digital signal.

前述之光調變機構、及含有前述光調變機構的圖案形成裝置,舉例來說,例如其可以是在特開2005-258431號公報之段落編號〔0016〕~〔0047〕上所記載的例子等。The optical modulation mechanism and the pattern forming apparatus including the optical modulation mechanism are, for example, examples described in paragraph numbers [0016] to [0047] of JP-A-2005-258431. Wait.

<光照射機構><Light Irradiation Mechanism>

前述的光照射機構並沒有特別的限制,可以視目的需要而適當地選擇,舉例來說,例如其可以是(超)高壓水銀燈、氙氣燈、碳弧燈、鹵素燈、影印機用等之螢光管、LED、半導體雷射等之習知光源,或可以合成2條以上之光進行照射的機構;於此等之中,較宜是可以合成2條以上之光進行照射的機構。The light irradiation mechanism is not particularly limited, and may be appropriately selected depending on the purpose. For example, it may be a (super) high pressure mercury lamp, a xenon lamp, a carbon arc lamp, a halogen lamp, a photocopier, etc. A conventional light source such as a light pipe, an LED, or a semiconductor laser, or a mechanism that can synthesize two or more light beams, and among these, a mechanism that can synthesize two or more pieces of light is preferably used.

從前述光照射機構所照射的光,例如在隔著支持體進行光照射的情況,舉例來說,例如其可以是透過該支持體、且將所使用的光聚合起始劑或增感劑予以活性化之電磁波、紫外線~可見光線、電子線、X射線、雷射光等;於此等之中,較宜是雷射光,更宜是由2條以上之光合成的雷射(以下,稱為「複合波雷射」)。另外,即使是在剝離支持體後進行光照射的情況下,亦可以使用相同的光。The light irradiated from the light-irradiating means may be, for example, a light-irradiating initiator or a sensitizer used by, for example, transmitting the support through the support. Activated electromagnetic waves, ultraviolet rays, visible rays, electron beams, X-rays, laser light, etc.; among them, laser light is preferred, and lasers synthesized by two or more lights are more suitable (hereinafter, referred to as " Compound wave laser"). Further, even when light irradiation is performed after peeling off the support, the same light can be used.

前述的紫外線~可見光線之波長,例如,較佳為300~1500奈米,更佳為320~800奈米,特佳為330~650奈米。The wavelength of the ultraviolet to visible light is, for example, preferably 300 to 1500 nm, more preferably 320 to 800 nm, and particularly preferably 330 to 650 nm.

前述雷射光之波長,例如,較佳為200~1500奈米,更佳為300~800奈米,更理想是330~500奈米,特別理想是395~415奈米。The wavelength of the aforementioned laser light is, for example, preferably 200 to 1500 nm, more preferably 300 to 800 nm, more preferably 330 to 500 nm, and particularly preferably 395 to 415 nm.

可照射前述之複合波雷射光的機構,例如,較佳是具有使複數雷射、多模光纖、與從複數雷射所各自照射的雷射光,聚光於前述多模光纖上相互結合之集合光學系統的機構。The mechanism for illuminating the composite laser light as described above, for example, preferably having a combination of a plurality of lasers, a multimode fiber, and a laser beam irradiated from each of the plurality of lasers on the multimode fiber The mechanism of the optical system.

以下,關於可照前述複合波雷射光之機構(纖維陣列光源),舉例來說,例如其可以是在特開316431號公報之段落編號〔0130〕~〔0177〕上所記載的例子等。In the following, for example, the mechanism (fiber array light source) that can illuminate the composite laser light can be, for example, an example described in paragraph numbers [0130] to [0177] of JP-A-316431.

<微透鏡陣列><Microlens array>

前述之曝光,較宜是使前述所調變的光通過微透鏡陣列來進行,更且,也可以是進一步地通過纖維陣列、成像光學系統等來進行。In the above-described exposure, it is preferred that the modulated light is passed through the microlens array, or further, the fiber array, the imaging optical system, or the like may be used.

前述之微透鏡陣列並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,舉例來說,例如適合者為具有可補正因前述圖素部中射出面之畸變所導致的像差之非球面的微透鏡。The microlens array described above is not particularly limited, and may be appropriately selected according to the needs of the object. However, for example, it is suitable for the aberration to be corrected by the distortion of the exit surface in the pixel portion. Aspherical microlens.

前述之非球面並沒有特別的限制,雖然可以按照目的需要而適當地選擇,然而,較佳為複曲面。The aspherical surface described above is not particularly limited, and may be appropriately selected according to the purpose, but is preferably a toric surface.

以下,一邊參照與前述微透鏡陣列、前述開口陣列及前述成像光學系等有關的圖面,一邊進行説明。Hereinafter, the description will be made with reference to the drawings relating to the microlens array, the aperture array, the imaging optical system, and the like.

第3(A)圖係表示由DMD50、對DMD50照射雷射光之光照射機構144、使以DMD50反射的雷射光擴大成像之透鏡系統(成像光學系統)454、458、對應於DMD50之各圖素部配置有數個微透鏡474的微透鏡陣列472、對應於微透鏡陣列472之各微透鏡設置有數個開口478之開口陣列476、使通過開口的雷射光成像於被曝光面56的透鏡系統(成像光學系統)480、482所構成之曝光頭部。Fig. 3(A) shows a lens system (imaging optical system) 454, 458, which corresponds to the DMD 50, by a DMD 50, a light irradiation mechanism 144 that irradiates the DMD 50 with laser light, and a lens system (imaging optical system) 454, 458 that expands the laser light reflected by the DMD 50. A microlens array 472 having a plurality of microlenses 474, an aperture array 476 corresponding to the microlenses 472, and an aperture array 476 having a plurality of openings 478, and a lens system for imaging the laser light passing through the openings to the exposed surface 56 (imaging) Optical system) 480, 482 formed by the exposure head.

本文中,第4圖係表示構成DMD50之微鏡片62的反射面之平面度的測定結果。於同圖中,係以等高線連結來表示反射面之相同高度位置,等高線之間距為5奈米。另外,同圖所示之x方向及y方向係為微鏡片62之2個對角線方向,微鏡片62係以沿著y方向延伸的旋轉軸為中心,如前述旋轉。又,第5(A)圖及第5(B)圖係各表示沿著前述x方向、y方向之微鏡片62的反射面高度位置位移。Here, Fig. 4 shows the measurement results of the flatness of the reflecting surface of the microlens 62 constituting the DMD 50. In the same figure, the height points are connected to indicate the same height position of the reflecting surface, and the distance between the contour lines is 5 nm. Further, the x direction and the y direction shown in the figure are two diagonal directions of the microlens 62, and the microlens 62 is rotated as described above with the rotation axis extending in the y direction as the center. Further, the fifth (A) and fifth (B) drawings each show the displacement of the height of the reflection surface of the microlens 62 along the x direction and the y direction.

如第4圖、第5圖所示,微鏡片62之反射面上有畸變情形存在,特別在注視觀察透鏡中央部位時,1個對角線方向(y方向)之畸變情形乃較另一對角線方向(x方向)的畸變情形還大。因此,以微透鏡陣列55之微透鏡55a聚光的雷射光B之聚光位置會產生形狀畸變的問題。As shown in Fig. 4 and Fig. 5, there is a distortion on the reflecting surface of the microlens 62. Especially in the central portion of the viewing lens, the distortion in one diagonal direction (y direction) is better than the other pair. The distortion in the angular direction (x direction) is still large. Therefore, the condensing position of the laser light B condensed by the microlens 55a of the microlens array 55 causes a problem of shape distortion.

於本發明的圖案形成方法中,為了防止前述問題,係使微透鏡陣列55之微透鏡55a具有與習知不同的特殊形狀。於下述中詳細說明該點。In the pattern forming method of the present invention, in order to prevent the aforementioned problem, the microlens 55a of the microlens array 55 has a special shape different from the conventional one. This point is explained in detail below.

第6(A)圖及第6(B)圖係分別詳細表示微透鏡陣列55全體之正面形狀及側面形狀。於這些圖中,亦記載有微透鏡陣列55之各部分尺寸,此等之單位為mm(毫米)。就本發明之圖案形成方法而論,係為如先前所參照的第2圖之說明這樣地來驅動DMD50之1024個x256列之微鏡片62,對應於此之微透鏡陣列55,則係在橫方向及縱方向分別並排設置1024列及256列的微透鏡55a而構成。另外,於同圖之(A)圖中,微透鏡55的並排順序在橫方向係以j表示,在縱方向係以k表示。The sixth (A) and sixth (B) drawings show the front shape and the side surface shape of the entire microlens array 55 in detail. In these figures, the dimensions of the various portions of the microlens array 55 are also described, and the units are in mm (mm). In the pattern forming method of the present invention, 1024 x 256 columns of microlenses 62 of the DMD 50 are driven as described in the second drawing referred to above, and the microlens array 55 corresponding thereto is in the horizontal direction. The microlens 55a of 1024 rows and 256 columns are arranged side by side in the direction and the longitudinal direction, respectively. Further, in the diagram (A) of the same figure, the side-by-side order of the microlenses 55 is denoted by j in the lateral direction and denoted by k in the longitudinal direction.

又,第7(A)圖及第7(B)圖係各顯示微透鏡陣列55中1個微透鏡55a之正面形狀及側面形狀。另外,於同圖之(A)圖中一併顯示微透鏡55a之等高線。各微透鏡55a之光射出面的端面,係為補正因微鏡片62之反射面畸變所致的像差之非球面形狀。更具體而言,微透鏡55a係複曲面透鏡,對應於前述x方向光學之曲率半徑Rx=-0.125毫米,對應前述y方向之曲率半徑Ry=-0.1毫米。Further, the seventh (A) and seventh (B) drawings each show the front shape and the side surface shape of one microlens 55a in the microlens array 55. Further, the contour lines of the microlens 55a are shown together in the figure (A) of the same figure. The end surface of the light exit surface of each microlens 55a is an aspherical shape that corrects aberration due to distortion of the reflecting surface of the microlens 62. More specifically, the microlens 55a is a toric lens having a curvature radius Rx of −0.125 mm corresponding to the x-direction optics and a radius of curvature Ry=−0.1 mm corresponding to the y direction.

從而,平行於前述x方向及y方向之截面內雷射光B的聚光狀態,係分別約略如第8(A)圖及第8(B)圖所示。即,在平行於x方向之截面內與平行於y方向之截面內相比時,後者截面內之微透鏡55a之曲率半徑較小,焦點距離較短。Therefore, the condensed states of the laser light B in the cross section parallel to the x direction and the y direction are approximately as shown in Figs. 8(A) and 8(B), respectively. That is, when compared with the inside of the cross section parallel to the y direction in the cross section parallel to the x direction, the microlens 55a in the latter cross section has a small radius of curvature and a short focal length.

微透鏡55a為前述形狀時,該微透鏡55a之聚光位置(焦點位置)附近之光束直徑藉由計算機模擬計算結果,如第9a、b、c、d圖所示。另外,為了進行比較,乃就當微透鏡55a為曲率半徑Rx=Ry=-0.1毫米之球面形狀的情況進行相同模擬計算,其結果如第10a、b、c、d圖所示。另外,各圖中z之值,係使微透鏡55a之焦點方向的評估位置以自微透鏡55a之光束射出面的距離表示。When the microlens 55a has the above shape, the beam diameter in the vicinity of the condensing position (focus position) of the microlens 55a is calculated by computer simulation as shown in Figs. 9a, b, c, and d. Further, for comparison, the same simulation calculation was performed in the case where the microlens 55a has a spherical shape having a radius of curvature Rx = Ry = -0.1 mm, and the results are shown in Figs. 10a, b, c, and d. Further, the value of z in each drawing is such that the evaluation position of the focus direction of the microlens 55a is expressed by the distance from the light beam exit surface of the microlens 55a.

又,前述模擬計算所使用的微透鏡55a之面形狀,係以下述計算式計算。Further, the surface shape of the microlens 55a used in the above simulation calculation is calculated by the following calculation formula.

於前述計算式中,Cx係表示x方向之曲率(=1/Rx),Cy係表示y方向之曲率(=1/Ry),x係表示自x方向之透鏡光軸O的距離,Y係表示自y方向之透鏡光軸O的距離。In the above calculation formula, Cx represents the curvature in the x direction (=1/Rx), Cy represents the curvature in the y direction (=1/Ry), and x represents the distance from the optical axis O of the lens in the x direction, and the Y system The distance from the optical axis O of the lens in the y direction.

比較第9a~d圖與第10a~d圖可知,本發明之圖案形成方法藉由使微透鏡55a平行於y方向之截面內焦點距離較平行於x方向之截面內焦點距離為小的複曲面透鏡,而抑制其之聚光位置附近的光束形狀之畸變。藉此可使沒有畸變、更高精細的影像曝光於感光層150上。又,在第9a~d圖所示的本實施形態方面,可知光束直徑小的範圍較為廣泛,即焦點深度較大。Comparing the 9th to dth graphs and the 10th to dth graphs, the pattern forming method of the present invention has a toric surface having a small focal length in a cross section parallel to the x direction in which the microlens 55a is parallel to the y direction. The lens suppresses the distortion of the shape of the beam near the condensing position. Thereby, an image having no distortion and higher definition is exposed on the photosensitive layer 150. Further, in the present embodiment shown in Figs. 9a to d, it is understood that the beam diameter is small in a wide range, that is, the depth of focus is large.

再者,有關微鏡片62之x方向及y方向的中央部畸變的大小關係,與前述相反的情況,由平行於x方向之截面內焦點距離較平行於y方向之截面內焦點距離為小的複曲面透鏡構成微透鏡時,同樣地可使沒有畸變、更高精細的影像曝光於感光層150上。Further, regarding the magnitude relationship between the distortion of the central portion of the microlens 62 in the x direction and the y direction, contrary to the above, the focal length in the cross section parallel to the x direction is smaller than the focal length in the cross section parallel to the y direction. When the toric lens constitutes a microlens, the undistorted, higher-definition image is similarly exposed on the photosensitive layer 150.

又,在微透鏡陣列55之聚光位置附近所配置的開口陣列59,係為藉由各開口59a上僅使經由對應的微透鏡55a之光入射下配置者。即,藉由設置該開口陣列59,可防止來自與其沒有對應的相鄰微透鏡55a之光入射於各開口59a,而可提高消光比。Further, the array of openings 59 arranged in the vicinity of the condensing position of the microlens array 55 is arranged such that only light passing through the corresponding microlens 55a is incident on each opening 59a. That is, by providing the opening array 59, it is possible to prevent light from the adjacent microlenses 55a not corresponding thereto from being incident on the respective openings 59a, and the extinction ratio can be improved.

本來基於前述目的而設置的開口陣列59之開口59a的直徑的值為小到某一程度時,即可以得到抑制微透鏡55a之聚光位置中光束形狀畸變的效果。然而,如此會使開口陣列59所遮斷的光量變多,使光利用效率降低。相對於此,當在微透鏡55a為非球面形狀之情況下,由於沒有遮斷光,故可以確高的保光利用效率。When the value of the diameter of the opening 59a of the opening array 59 which is originally provided for the above purpose is as small as a certain degree, the effect of suppressing the distortion of the beam shape in the condensing position of the microlens 55a can be obtained. However, this increases the amount of light blocked by the aperture array 59 and reduces the light use efficiency. On the other hand, when the microlens 55a has an aspherical shape, since the light is not blocked, a high light retention efficiency can be obtained.

又,於本發明之圖案形成方法中,微透鏡55a可以為2次元非球面形狀,亦可以為較高次元(4次元、6次元...)之非球面形狀。藉由採用前述高次元非球面形狀,可以得更為高精細的光束形狀。Further, in the pattern forming method of the present invention, the microlens 55a may have a 2-dimensional aspherical shape or an aspherical shape of a higher order (4th order, 6th order...). By adopting the aforementioned high-dimensional aspherical shape, a more high-definition beam shape can be obtained.

又,於以上説明的實施形態中,雖然是使微透鏡55a之光射出側端面成為非球面(複曲面),然而使2種光通過端面之一方成為球面,另一方成為圓筒面之微透鏡構成微透鏡陣列,亦可得到前述實施形態同樣的效果。Further, in the embodiment described above, the light-emitting side end surface of the microlens 55a is an aspherical surface (toric surface), but one of the two types of light passes through one end surface and becomes a spherical surface, and the other becomes a cylindrical surface microlens. The same effects as in the above embodiment can be obtained by constituting the microlens array.

另外,於前述說明的實施形態中,雖然微透鏡陣列55之微透鏡55a係為補正因微鏡片62之反射面畸變所致的像差之非球面形狀,然而以在構成微透鏡陣列之各微透鏡上具有補正因微鏡片62之反射面畸變所致的像差之折射率分布取代採用該非球面形狀時,亦可得到相同的效果。Further, in the above-described embodiment, the microlens 55a of the microlens array 55 is an aspherical shape that corrects the aberration due to the distortion of the reflecting surface of the microlens 62, but the microlens array is formed. The same effect can be obtained by replacing the refractive index distribution of the aberration due to the distortion of the reflecting surface of the microlens 62 on the lens instead of using the aspherical shape.

該微透鏡155a之一例係如第11圖所示。同圖之(A)圖及(B)圖各顯示該微透鏡155a之正面形狀及側面形狀。如圖所示,該微透鏡155a之外形形狀為平行平板狀。另外,同圖中x、y方向如上所述。An example of the microlens 155a is as shown in Fig. 11. The front and side shapes of the microlens 155a are shown in each of the drawings (A) and (B). As shown in the figure, the outer shape of the microlens 155a is a parallel plate shape. In addition, the x and y directions in the same figure are as described above.

又,第12(A)及(B)圖係約略表示藉由該微透鏡155a,平行於前述x方向及y方向之截面內雷射光B的聚光狀態。該微透鏡155a係為具有自光軸O朝向外方逐漸增大的折射率分布,同圖中微透鏡155a內所示之虛線係表示自光軸O以特定等間距變化的位置。如圖所示,比較平行於x方向之截面內與平行於y方向之截面內,後者之截面內微透鏡155a之折射率變化比例較大,焦點距離較短。使用由該折射率分布型透鏡所構成的微透鏡陣列,可得與使用前述微透鏡陣列55同樣的效果。Further, the 12th (A) and (B) drawings roughly show the condensed state of the laser beam B in the cross section parallel to the x direction and the y direction by the microlens 155a. The microlens 155a has a refractive index distribution which gradually increases from the optical axis O toward the outside, and the broken line shown in the microlens 155a in the same figure indicates a position which changes from the optical axis O by a certain equal pitch. As shown in the figure, in the cross section parallel to the x direction and the cross section parallel to the y direction, the refractive index change ratio of the microlens 155a in the latter section is large, and the focal length is short. The same effect as that of the microlens array 55 described above can be obtained by using the microlens array composed of the refractive index distribution type lens.

另外,於先前第7圖及第8圖所示之微透鏡55a的面形狀為非球面之微透鏡中,同時具有如前述之折射率分布,藉由面形狀與折射率分布雙方,可補正因微鏡片62之反射面畸變所致的像差。Further, in the microlens having the aspherical surface shape of the microlens 55a shown in the previous FIGS. 7 and 8 and having the refractive index distribution as described above, both the surface shape and the refractive index distribution can correct the cause. The aberration caused by the distortion of the reflecting surface of the microlens 62.

又,於前述實施形態中,雖然可補正由於構成DMD50的微鏡片62之反射面畸變所致的像差,但是於使用DMD以外的空間光調變元件之本發明圖案形成方法中,即使該空間光調變元件之圖素部的面上存在有畸變形時,使用本發明可補正因該畸變所致的像差,且可防止光束形狀發生變形。Further, in the above-described embodiment, the aberration due to the distortion of the reflecting surface of the microlens 62 constituting the DMD 50 can be corrected, but in the pattern forming method of the present invention using the spatial light modulation element other than the DMD, even the space When there is distortion on the surface of the pixel portion of the light modulation element, the aberration of the distortion can be corrected by using the present invention, and the shape of the beam can be prevented from being deformed.

其次,更進一步說明前述成像光學系統。Next, the aforementioned imaging optical system will be further explained.

前述曝光頭部係自光照射機構144照射雷射光時,藉由DMD50朝開啟方向反射的光束線之截面積,係經由透鏡系統454、458擴大數倍(例如2倍)。經擴大的雷射光經由微透鏡陣列472之各微透鏡對應於DMD50之各圖素部聚光,通過對應於開口陣列476之開口。通過開口之雷射光,經由透鏡系統480、482成像於被曝光面56上。When the exposure head is irradiated with the laser light from the light irradiation means 144, the cross-sectional area of the beam line reflected by the DMD 50 in the opening direction is expanded by several times (for example, twice) via the lens systems 454 and 458. The expanded laser light is concentrated by the respective microlenses of the microlens array 472 corresponding to the respective pixel portions of the DMD 50 through the openings corresponding to the array of openings 476. The exposed laser light is imaged onto the exposed surface 56 via lens systems 480, 482.

於該成像光學系統中,DMD50所反射的雷射光,由於經由擴大透鏡454、458擴大數倍而投影於被曝光面56上,故全體之影像範圍擴大。此時,若沒有配置微透鏡陣列472及開口陣列476,則如第3(B)圖所示,投影於被曝光面56之各光束點BS的1圖素尺寸(點尺寸)為對應於曝光區域468之尺寸大小者,表示曝光區域468之鮮銳度的MTF(Modulation Transfer Function,調變轉移功能)特性降低。In the imaging optical system, the laser light reflected by the DMD 50 is projected on the exposure surface 56 by being expanded by several times by the enlarged lenses 454 and 458, so that the entire image range is expanded. At this time, if the microlens array 472 and the aperture array 476 are not disposed, as shown in FIG. 3(B), the pixel size (dot size) of each beam spot BS projected on the exposure surface 56 corresponds to the exposure. The size of the area 468 indicates that the MTF (Modulation Transfer Function) characteristic of the sharpness of the exposure area 468 is lowered.

另一方面,於配置微透鏡陣列472及開口陣列476的情況,DMD50反射的雷射光係經由微透鏡陣列472之各微透鏡對應於DMD50之各圖素部聚光。藉此,如第3(C)圖所示,即使曝光區域被擴大時,各光束點BS之點尺寸仍可縮小至所欲之大小(例如10微米×10微米),可防止MTF特性降低,進行高精細曝光。另外,曝光區域468的傾斜係為了使圖素間沒有間隙地傾斜配置DMD50之故。On the other hand, in the case where the microlens array 472 and the aperture array 476 are disposed, the laser light reflected by the DMD 50 is concentrated by the respective microlenses of the microlens array 472 corresponding to the respective pixel portions of the DMD 50. Thereby, as shown in FIG. 3(C), even when the exposure area is enlarged, the dot size of each beam spot BS can be reduced to a desired size (for example, 10 μm×10 μm), and the MTF characteristic can be prevented from being lowered. Perform high-definition exposure. Further, the inclination of the exposure region 468 is such that the DMD 50 is disposed obliquely without a gap between the pixels.

又,即使因微透鏡之像差致使光束變粗時,也可藉由開口陣列在被曝光面56上點尺寸為一定大小下將光束整形,同時藉由通過對應於各圖素所設置開口陣列,可防止相鄰的圖素間產生串音情形。Moreover, even if the light beam is thickened due to the aberration of the microlens, the beam size can be shaped by the aperture array on the exposed surface 56 to a certain size, while the aperture array is provided by corresponding to each pixel. To prevent crosstalk between adjacent pixels.

更且,藉由在光照射機構144使用高亮度光源,由於自透鏡458入射於微透鏡陣列472之各微透鏡面的光束角度變小,故可防止部分相鄰的圖素之光束入射。即,可以實現高消光比。Further, by using the high-intensity light source in the light irradiation means 144, since the angle of the light beam incident on the respective lenticular surfaces of the microlens array 472 from the lens 458 becomes small, it is possible to prevent the light beams of the adjacent pixels from being incident. That is, a high extinction ratio can be achieved.

<其它光學系統><Other optical systems>

本發明之圖案形成方法,可併用適當選自於習知光學系統之其它光學系統,舉例來說,例如其可以是由1對組合透鏡所成的光量分布補正光學系統等。The pattern forming method of the present invention may be used in combination with other optical systems suitably selected from conventional optical systems. For example, it may be, for example, a light amount distribution correcting optical system formed by a pair of combined lenses.

前述之光量分布補正光學系統,係變化各射出位置之光束寬度,使接近光軸之中心部的光束寬度相對於周邊部之光束寬度的比值,在射出側方面成為小於入射側,進而在以來自光照射機構之平行光束照射於DMD時,將在被照射面之光量分布予以補正成為約略均勻。有關前述之光量分布補正光學系統,舉例來說,例如其可以是特。開2005-258431號公報之段落編號〔0090〕~〔0105〕上所記載之內容等。In the light quantity distribution correction optical system described above, the beam width at each of the emission positions is changed, and the ratio of the beam width near the central portion of the optical axis to the beam width of the peripheral portion is smaller than the incident side on the emission side, and further When the parallel light beam of the light irradiation means is irradiated to the DMD, the light quantity distribution on the illuminated surface is corrected to be approximately uniform. Regarding the aforementioned light amount distribution correction optical system, for example, it may be special. The contents described in paragraph numbers [0090] to [0105] of the publication No. 2005-258431 are issued.

<其他步驟><other steps>

前述之其他步驟並沒有特別的限制,舉例來說,例如可以從習如圖案形成之步驟中適當選擇;舉例來說,例如其可以是顯像步驟、蝕刻步驟、鍍敷步驟等。此等可以1種單獨使用,亦可以併用2種以上。The other steps described above are not particularly limited, and may be appropriately selected, for example, from the steps of forming a pattern; for example, it may be a developing step, an etching step, a plating step, or the like. These may be used alone or in combination of two or more.

前述之顯像步驟係一種藉由前述曝光步驟將前述圖案形成材料中的感光層予以曝光,使該感光層的經曝光之區域硬化後,再去除未硬化區域並進行顯像而形成圖案的步驟。The developing step is a step of exposing the photosensitive layer in the pattern forming material by the exposure step, hardening the exposed region of the photosensitive layer, removing the unhardened region, and developing the pattern to form a pattern. .

前述之顯像步驟,例如,可以藉由顯像手段來實施。The aforementioned development step can be carried out, for example, by means of development.

前述之顯像步驟只要是可以使用顯像液來進行顯像即可,並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,舉例來說,例如其可以是前述之顯像液噴霧手段、前述之塗布顯像液的手段、前述之浸漬顯像液的手段等。此等係可以1種單獨使用,也可以併用2種以上。The development step described above is not particularly limited as long as it can be developed using a developing solution, and may be appropriately selected according to the purpose. However, for example, it may be the aforementioned developing solution. The spraying means, the means for applying the developing liquid, the means for impregnating the developing liquid, and the like. These may be used alone or in combination of two or more.

又,前述顯像手段也可以具有交換前述顯像液之顯像液交換手段、供給前述顯像液之顯像液供給手段等。Further, the developing means may include a developing solution exchange means for exchanging the developing liquid, a developing liquid supply means for supplying the developing liquid, and the like.

前述之顯像液並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,舉例來說,例如其可以是鹼性液、水系顯像液、有機溶劑等;於此等之中,較宜是弱鹼性水溶液。該弱鹼性液之鹼成分,舉例來說,例如其可以是氫氧化鋰、氫氧化鈉、氫氧化鉀、碳酸鋰、碳酸鈉、碳酸鉀、碳酸氫鋰、碳酸氫鈉、碳酸氫鉀、磷酸鈉、磷酸鉀、焦磷酸鉀、硼砂等。The developing solution is not particularly limited, and may be appropriately selected according to the purpose. However, for example, it may be an alkaline liquid, a water-based developing liquid, an organic solvent, or the like; among them, It is preferably a weakly alkaline aqueous solution. The alkali component of the weakly alkaline liquid may be, for example, lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogencarbonate, sodium hydrogencarbonate or potassium hydrogencarbonate. Sodium phosphate, potassium phosphate, potassium pyrophosphate, borax, and the like.

前述弱鹼性水溶液之pH值,舉例來說,例如較佳為約8~12,更佳為約9~11。前述弱鹼性水溶液,舉例來說,例如其可以是0.1~5質量%碳酸鈉水溶液或碳酸鉀水溶液等。The pH of the aforementioned weakly alkaline aqueous solution is, for example, preferably from about 8 to 12, more preferably from about 9 to 11. The weakly basic aqueous solution may be, for example, 0.1 to 5% by mass of an aqueous solution of sodium carbonate or an aqueous solution of potassium carbonate.

前述顯像液之溫度,雖然可以適當地選擇合於前述感光層之顯像性者,然而,例如,較佳為約25℃~40℃。The temperature of the developing solution may be appropriately selected from those of the photosensitive layer. However, for example, it is preferably about 25 to 40 °C.

前述顯像液也可以併用界面活性劑、消泡劑、有機鹼(例如乙二胺、乙醇胺、氫氧化四甲銨、二伸乙三胺、三伸乙五胺、嗎啉、三乙醇胺等)、或促進顯像用的有機溶劑(例如醇類、酮類、酯類、醚類、醯胺類、內酯類等)等。又,前述顯像液可以是水或鹼水溶液與有機溶劑混合而成的水系顯像液,亦可以是單獨的有機溶劑。The above-mentioned developing solution may also be used in combination with a surfactant, an antifoaming agent, or an organic base (for example, ethylenediamine, ethanolamine, tetramethylammonium hydroxide, diethylenetriamine, triethyleneamine, morpholine, triethanolamine, etc.). Or an organic solvent (for example, an alcohol, a ketone, an ester, an ether, a guanamine, a lactone, etc.) for promoting development. Further, the developing solution may be a water-based developing solution obtained by mixing water or an aqueous alkali solution with an organic solvent, or may be a single organic solvent.

前述之蝕刻步驟,係可以藉由利用從習知蝕刻處理方法中適當選擇之方法來進行。The etching step described above can be carried out by a method appropriately selected from a conventional etching treatment method.

前述蝕刻處理所使用的蝕刻液並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,例如於以銅形成前述金屬層之情況,舉例來說,例如其可以是氯化銅溶液、氯化鐵溶液、鹼蝕刻溶液、過氧化氫系蝕刻液等;於此等之中,從蝕刻因子的觀點看來,較宜是氯化鐵溶液。The etching liquid used in the etching treatment is not particularly limited, and may be appropriately selected according to the purpose. However, for example, in the case where the metal layer is formed of copper, for example, it may be a copper chloride solution, A ferric chloride solution, an alkali etching solution, a hydrogen peroxide-based etching liquid, or the like; among these, from the viewpoint of an etching factor, a ferric chloride solution is preferred.

藉由在前述蝕刻步驟蝕刻處理後再去除前述圖案,可以在前述基體表面上形成圖案。The pattern can be formed on the surface of the substrate by removing the pattern after the etching step in the etching step.

前述圖案並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,舉例來說,例如合適者為配線圖案等。The above-described pattern is not particularly limited, and may be appropriately selected according to the purpose, but, for example, a wiring pattern or the like is suitable, for example.

前述之鍍敷步驟,可以藉由從習知之鍍敷處理之中選取適當的方法來進行。The plating step described above can be carried out by selecting an appropriate method from the conventional plating treatment.

前述之鍍敷處理,舉例來說,例如其可以是硫酸銅鍍敷、焦磷酸銅鍍敷等之鍍銅、快慢焊接鍍敷等之焊接鍍敷、瓦特浴(硫酸鎳-氯化鎳)鍍敷、胺基磺酸鎳等之鍍鎳、硬式鍍金、軟式鍍金等之鍍金等處理。For example, the plating treatment may be copper plating such as copper sulfate plating or copper pyrophosphate plating, solder plating such as rapid solder plating, or watt bath (nickel sulfate-nickel chloride) plating. Treatment such as nickel plating, hard gold plating, soft gold plating, etc., such as nickel sulfonate.

藉由前述鍍敷步驟鍍敷處理後再去除前述圖案,更進一步視需要地藉由蝕刻處理等以除去不需要的部分,可以在前述基體表面上形成永久圖案。The pattern is removed by the plating step and the pattern is removed, and an unnecessary portion is removed by an etching treatment or the like as needed, and a permanent pattern can be formed on the surface of the substrate.

〔印刷配線板及彩色濾光片的製造方法〕[Manufacturing Method of Printed Wiring Board and Color Filter]

本發明之前述圖案形成方法,係可以使用於印刷配線板之製造、特別是具有貫穿孔或通孔等之孔部的印刷配線板之製造以及彩色濾光片的製造。於下述中,說明有關利用本發明之圖案形成方法來製造印刷配線板以及彩色濾光片的方法之一例。The pattern forming method of the present invention can be used for the production of a printed wiring board, particularly a printed wiring board having a hole portion such as a through hole or a through hole, and the production of a color filter. Hereinafter, an example of a method of manufacturing a printed wiring board and a color filter by the pattern forming method of the present invention will be described.

-印刷配線板的製造方法--Manufacturing method of printed wiring board -

特別是一種具有貫穿孔或通孔等之孔部之印刷配線板的製法,係可以藉由(1)在作為前述基體之具有孔部的印刷配線板形成用基板上,使前述圖案形成材料以其感光層為前述基體側的位置關係積層形成積層體,(2)自前述積層體之基體的相反側,在所欲的區域內進行光照射以使感光層硬化,(3)自前述積層體去除前述圖案形成材料之支持體、緩衝層及障壁層,(4)使前述積層體之感光層顯像,並去除該積層體中的未硬化部分而形成圖案。In particular, a method for producing a printed wiring board having a hole portion such as a through hole or a through hole can be obtained by (1) forming a pattern forming material on a substrate for forming a printed wiring board having a hole portion as the substrate. The photosensitive layer is formed by laminating the positional relationship on the substrate side, and (2) is irradiated with light in a desired region from the opposite side of the substrate of the laminate to harden the photosensitive layer, and (3) from the laminate The support, the buffer layer, and the barrier layer of the pattern forming material are removed, and (4) the photosensitive layer of the laminate is developed, and the unhardened portion of the laminate is removed to form a pattern.

另外,關於前述(3)的前述支持體之去除,係可以在前述(1)與(2)之間進行來代替在前述(2)與(4)間之進行。Further, the removal of the support described in the above (3) may be performed between the above (1) and (2) instead of the above (2) and (4).

然後,為製得印刷配線板時,可以使用前述所形成的圖案,對前述印刷配線板形成用基板進行蝕刻處理或鍍敷處理的方法(例如習知的減法或加法(如半加法、全加法)處理。於此等之中,為以有利於工業的遮蔽處理來形成印刷配線板時,以前述減法較佳。前述處理後剝離在印刷配線板形成用基板上所殘存的硬化樹脂,而且,為前述減法時,於剝離後藉由使銅薄膜部蝕刻,可製造所期望的印刷配線板。此外,多層印刷配線板亦可與前述印刷配線板的製法相同地製造。Then, in order to obtain a printed wiring board, a method of etching or plating the substrate for forming a printed wiring board can be used (for example, a conventional subtraction or addition method (for example, a half addition, a full addition method) using the pattern formed as described above. In the case of forming a printed wiring board by a masking process which is advantageous for the industry, the above-described subtraction method is preferred. After the treatment, the cured resin remaining on the printed wiring board forming substrate is peeled off, and In the case of the above-mentioned subtraction, a desired printed wiring board can be produced by etching the copper thin film portion after peeling. Further, the multilayer printed wiring board can be produced in the same manner as the above-described printed wiring board.

其次,更進一步說明有關使用前述圖案形成材料之具有貫穿孔的印刷配線板之製法。Next, a method of manufacturing a printed wiring board having through holes using the pattern forming material will be further explained.

首先,準備具有貫穿孔且表面以金屬鍍敷層被覆的印刷配線板形成用基板。前述之印刷配線板形成用基板,例如可使用覆銅積層基板及玻璃-環氧樹脂等之絕緣基體上形成有銅鍍敷層的基板,或在此等基板上積層層間絕緣膜且形成銅鍍敷層的基板(積層基板)。First, a substrate for forming a printed wiring board having a through hole and having a surface covered with a metal plating layer is prepared. In the above-mentioned substrate for forming a printed wiring board, for example, a substrate on which a copper plating layer is formed on an insulating substrate such as a copper-clad laminate or a glass-epoxy resin, or an interlayer insulating film is laminated on the substrate to form a copper plating. A coated substrate (laminated substrate).

其次,在前述之圖案形成材料上具有保護薄膜的情況下,將剝離在前述圖案形層材料上的保護薄膜,使用加壓輥壓合,以使前述圖案形成材料之感光層連接在前述印刷配線板形成用基板表面上(積層步驟)。藉此,製得依順序具有前述印刷配線板形成用基板與積層體之積層體。Next, in the case where the protective layer is provided on the pattern forming material, the protective film peeled off on the pattern layer material is pressed by a pressure roller to connect the photosensitive layer of the pattern forming material to the printed wiring. On the surface of the substrate for forming a plate (layering step). Thereby, a laminate having the substrate for forming a printed wiring board and the laminate in this order is obtained.

前述圖案形成材料之積層溫度並沒有特別的限制,舉例來說,例如其可以是室溫(15~30℃)或加熱下(30~180℃),於此等之中較宜是在加溫下(60~140℃)。The lamination temperature of the pattern forming material is not particularly limited. For example, it may be room temperature (15 to 30 ° C) or heating (30 to 180 ° C), and among them, it is preferable to heat. Lower (60~140°C).

前述壓合輥之輥壓並沒有特別的限制,例如較佳為0.1~1MPa。The rolling pressure of the aforementioned pressure roller is not particularly limited, and is, for example, preferably 0.1 to 1 MPa.

前述之壓合的速度並沒有特別的限制,較佳為1~3公尺/分。The speed of the aforementioned pressing is not particularly limited, and is preferably 1 to 3 meters per minute.

另外,可以將前述印刷配線板形成用基板預先加熱,又也可以在減壓下進行積層。Further, the substrate for forming a printed wiring board may be previously heated, or may be laminated under reduced pressure.

前述之積層體的形成,可以藉由在前述之印刷配線板形成用基板上積層前述之圖案形成材料;又也可以藉由將前述之圖案形成材料製造用的感光性樹脂組成物溶液等直接塗布在前述之印刷配線板形成用基板之表面上,並使之乾燥而將感光層、阻障層、緩衝層及支撐體積層在前述之印刷配線板形成用基板上。In the formation of the above-mentioned laminated body, the pattern forming material may be laminated on the printed wiring board forming substrate, or may be directly coated with a photosensitive resin composition solution for producing the pattern forming material. The surface of the printed wiring board forming substrate is dried and the photosensitive layer, the barrier layer, the buffer layer, and the support volume layer are formed on the printed wiring board forming substrate.

然後,從與前述積層體的基體相反之側的面上照射光,以使感光層硬化。又,此時,視情況需要(例如,支撐體的光透射性不夠充分的情況下)也可以在剝離前述之支撐體後再進行曝光。Then, light is irradiated from the surface on the side opposite to the substrate of the above laminated body to cure the photosensitive layer. Further, in this case, depending on the case (for example, when the light transmittance of the support is insufficient), the exposure may be performed after peeling off the support.

這個時候,在前述支持體、緩衝層及阻障層尚未剝離的情況下,自前述積層體剝離該支持體、緩衝層層及阻障層(剝離步驟)。At this time, when the support, the buffer layer, and the barrier layer are not peeled off, the support, the buffer layer, and the barrier layer are peeled off from the laminate (peeling step).

其次,以適當顯像液溶解去除前述印刷配線板形成用基板上感光層之未硬化區域,以使形成配線圖案形成用之硬化層與通孔之金屬層保護用硬化層的圖案,且在前述印刷配線板形成用基板表面上露出金屬層(顯像步驟)。Then, the uncured region of the photosensitive layer on the substrate for forming a printed wiring board is dissolved and removed by a suitable developing solution to form a pattern of the hardened layer for forming a metal layer for the wiring pattern forming hard layer and the via hole, and A metal layer is exposed on the surface of the substrate for forming a printed wiring board (developing step).

又,可以藉由在顯像之後視需要進行後加熱處理或後曝光處理,來進行促進硬化部之硬化反應的處理。顯像處理可以是前述濕式顯像法,也可以是乾式顯像法。Further, the treatment for promoting the hardening reaction of the hardened portion can be performed by performing post-heat treatment or post-exposure treatment as necessary after development. The development process may be the aforementioned wet development method or a dry development method.

其次,以蝕刻液將前述印刷配線板形成用基板表面上露出的金屬層予以溶解去除(蝕刻步驟)。由於通孔之開口部被硬化樹脂組成物(遮蔽膜)覆蓋,故蝕刻液不會進入通空內而腐蝕通孔內之金屬鍍層,因而通孔之金屬鍍層得以特定形狀殘留下來。藉此,可在前述印刷配線板形成用基板上形成配線圖案。Next, the metal layer exposed on the surface of the substrate for forming a printed wiring board is dissolved and removed by an etching solution (etching step). Since the opening of the through hole is covered by the hardened resin composition (masking film), the etching liquid does not enter the void and corrodes the metal plating in the through hole, so that the metal plating of the through hole remains in a specific shape. Thereby, a wiring pattern can be formed on the substrate for forming a printed wiring board.

前述之蝕刻液並沒有特別地限定,雖然可以按照目的需要而適當地選擇,然而,舉例來說,例如在以銅形成前述金屬層的情況下,其可以是氯化銅溶液、氯化鐵溶液、鹼蝕刻溶液、過氧化氫系蝕刻液等;於此等之中,從蝕刻因子的觀點看來,較宜是氯化鐵溶液。The foregoing etching liquid is not particularly limited, and may be appropriately selected according to the purpose, but, for example, in the case where the metal layer is formed of copper, it may be a copper chloride solution or a ferric chloride solution. An alkali etching solution, a hydrogen peroxide-based etching liquid, or the like; among these, from the viewpoint of an etching factor, a ferric chloride solution is preferred.

其次,以強鹼水溶液等,自前述印刷配線板形成用基板除去當作剝離片的前述硬化層(硬化物去除步驟)。Then, the hardened layer (hardened material removing step) which is a release sheet is removed from the printed wiring board forming substrate by a strong alkali aqueous solution or the like.

前述強鹼水溶液之鹼成分並沒有特別的限制,舉例來說,例如其可以是氫氧化鈉、氫氧化鉀等。The alkali component of the above-mentioned strong alkali aqueous solution is not particularly limited, and for example, it may be sodium hydroxide, potassium hydroxide or the like.

前述強鹼水溶液之pH值,例如較佳為約12~14,更佳為約13~14。The pH of the aqueous alkali solution is preferably, for example, about 12 to 14, more preferably about 13 to 14.

前述之強鹼水溶液,並沒有特別的限制,舉例來說,例如其可以是1~10質量%的氫氧化鈉水溶液或氫氧化鉀水溶液等。The above-mentioned strong alkali aqueous solution is not particularly limited, and for example, it may be a 1 to 10% by mass aqueous sodium hydroxide solution or an aqueous potassium hydroxide solution.

又,印刷配線板亦可為多層構成的印刷配線板。Further, the printed wiring board may be a printed wiring board having a plurality of layers.

再者,前述圖案形成材料不僅可以使用於前述蝕刻製程,亦可使用於鍍敷製程中。前述之鍍敷法,舉例來說,例如其可以是硫酸銅鍍敷、焦磷酸銅鍍敷等之鍍銅、快慢銲鍍等之銲鍍、瓦特浴(硫酸鎳-氯化鎳)鍍敷、胺基磺酸鎳等之鍍鎳、硬式鍍金、軟式鍍金等之鍍金等。Furthermore, the pattern forming material can be used not only in the etching process but also in the plating process. For example, the plating method may be copper plating such as copper sulfate plating or copper pyrophosphate plating, solder plating such as rapid solder plating, or watt bath (nickel sulfate-nickel chloride) plating. Nickel plating such as nickel sulfonate, hard gold plating, gold plating such as soft gold plating, and the like.

-彩色濾光片的製造方法--Manufacturing method of color filter -

當在於玻璃基板等之基體上貼合本發明之前述圖案形成材料的感光層、從該圖案形成材料剝離支撐體、緩衝層及阻障層的情況下,會有帶電的前述支撐體(薄膜)與人接受不愉快的電氣震撼,或者會有已帶電的支撐體本身具有塵埃附著的問題。因此,較宜是在前述支撐體上設置導電層,或實施使前述支撐體本身附予導電性之處理。又,前述導電層為設在與緩衝層相反側的前述支撐體上之情況下,較宜是設置疏水性聚合物層以提高耐傷性。When the photosensitive layer of the pattern forming material of the present invention is bonded to a substrate such as a glass substrate, and the support, the buffer layer, and the barrier layer are peeled off from the pattern forming material, the support (film) charged may be present. The person receives an unpleasant electrical shock, or there is a problem that the charged support itself has dust adhesion. Therefore, it is preferable to provide a conductive layer on the support or to perform a process of imparting conductivity to the support itself. Further, in the case where the conductive layer is provided on the support opposite to the buffer layer, it is preferable to provide a hydrophobic polymer layer to improve the scratch resistance.

接著,調製具有使前述感光層各自著色有紅色、綠色、藍色、黑色的具有紅色感光層之圖案形成材料、具有綠色感光層之圖案形成材料、具有藍色感光層之圖案形成材料、具有黑色感光層之圖案形成材料。使用具有紅色畫素用之前述紅色感光層的圖案形成材料,於將紅色感光層積層在前述基體表面上而使形成積層體後,使曝光成影像圖樣,進行顯像以形成紅色畫素。在形成紅色畫素形成之後,將前述積層體加熱以使未硬化部分硬化。有關綠色、藍色畫素也可以同樣作法進行,而使形成各畫素。Next, a pattern forming material having a red photosensitive layer in which each of the photosensitive layers is colored red, green, blue, and black, a pattern forming material having a green photosensitive layer, a pattern forming material having a blue photosensitive layer, and a black have been prepared. A pattern forming material of the photosensitive layer. A pattern forming material having the red photosensitive layer for red pixels is used, and a red photosensitive layer is laminated on the surface of the substrate to form a laminated body, and then exposed to an image pattern to be developed to form a red pixel. After the formation of the red pixel is formed, the aforementioned laminate is heated to harden the uncured portion. The green and blue pixels can also be processed in the same way, so that each pixel is formed.

前述積層體之形成,係可以藉由將前述之圖案形成材料積層在前述之玻璃基板上,又,也可以藉由將前述之圖案形成材料製造用的感光性樹脂組成物溶液等直接塗布在前述之玻璃基板上,藉由使之乾燥而在前述之玻璃基板上積層感光層、阻障層、緩衝層及支撐體。又,於配置紅、綠、藍等三種畫素之情況,也可以馬賽克型、三角型、4畫素配置型等予以配置。The layered body may be formed by laminating the pattern forming material on the glass substrate as described above, or by directly applying the photosensitive resin composition solution or the like for producing the pattern forming material described above. On the glass substrate, a photosensitive layer, a barrier layer, a buffer layer, and a support are laminated on the glass substrate by drying. Further, in the case of arranging three kinds of pixels such as red, green, and blue, it may be arranged in a mosaic type, a triangle type, or a four-pixel configuration type.

在形成有前述畫素之面上積層具有前述黑色感光層之圖案形成材料,且自沒有形成畫素側背面曝光、顯像,以形成黑色矩陣。可藉由將該形成有黑色矩陣之積層體加熱,使未硬化部分硬化,以製造彩色濾光片。A pattern forming material having the black photosensitive layer is laminated on the surface on which the pixel is formed, and a rear side of the pixel side is exposed and developed to form a black matrix. The uncured portion can be hardened by heating the laminate in which the black matrix is formed to produce a color filter.

本發明的圖案形成方法,由於可以在前述感光層及前述阻障層間的界面上進行剝離顯像的緣故,所以具有能夠抑制顯像後顯像液之污損而可以反復地使用顯像液等之有利點。又,由於在顯像時不需要除去前述之阻障層及前述緩衝層的緣故,所以具有顯像時間短的有利點。In the pattern forming method of the present invention, since the peeling development can be performed at the interface between the photosensitive layer and the barrier layer, it is possible to suppress the staining of the developing liquid after development and to repeatedly use the developing liquid or the like. The advantage. Further, since it is not necessary to remove the barrier layer and the buffer layer described above during development, it is advantageous in that the development time is short.

本發明之前述圖案形成方法,由於使用本發明之前述圖案形成材料的緣故,所以可使用於各種圖案之形成、配線圖案等之圖案形成、彩色濾光片、柱材、肋材、間隔物、隔壁等之液晶構造零件之製造、全息照相、微機器、驗證等的等之製造,特別是適合使用於高精細的配線圖案形成。本發明之圖案形成裝置,由於具備本發明的前述圖案形成材料,故可使用於各種圖案形成、配線圖案等之圖案形成、彩色濾光片、柱材、肋材、間隔物、隔壁等之液晶構造構件之製造、全息照相、微機器、驗證之製造,特別是適合使用於高精細的配線圖案及彩色濾光片的形成。Since the pattern forming method of the present invention uses the pattern forming material of the present invention, it can be used for pattern formation of various patterns, wiring patterns, etc., color filters, pillars, ribs, spacers, The manufacture of liquid crystal structural parts such as a partition wall, the manufacture of holograms, micro-machines, verification, etc., are particularly suitable for use in high-definition wiring pattern formation. Since the pattern forming apparatus of the present invention includes the pattern forming material of the present invention, it can be used for pattern formation of various pattern formations, wiring patterns, and the like, color filters, pillars, ribs, spacers, partition walls, and the like. The manufacture of structural members, the manufacture of holograms, micromachines, and verification are particularly suitable for the formation of high-definition wiring patterns and color filters.

【實施例】[Examples]

以下,藉由實施例更進一步具體地說明本發明,然而本發明不受到下述實施例之任何限制。Hereinafter, the present invention will be further specifically described by the examples, but the present invention is not limited by the following examples.

(實施例1)(Example 1) <感光性組成物溶液之調製><Preparation of photosensitive composition solution>

將下述之各成分予以混合而調製成M/B比為1:0.80之感光性組成物溶液。Each of the following components was mixed to prepare a photosensitive composition solution having an M/B ratio of 1:0.80.

.啡噻................0.013質量份.甲基丙烯酸甲酯/丙烯酸2-乙基己酯/甲基丙烯酸苄酯甲基丙烯酸(共聚物組成(質量比):50/20/7/23、質量平均分子量:90,000、酸價:150)..........15質量份.六亞甲基二異氰酸酯和四環氧乙烷單甲基丙烯酸酯之1/2莫耳比的加成物..............6.0質量份.N-丁基-2氯-甲基吖啶酮.........0.05重量份.2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷(新中村化學公司製、BPE-500)............6.0重量份.2,2-雙(o-氯苯基)-4,4’,5,5’-四苯基聯咪唑.2.17質量份.維多利亞藍..............0.02質量份.隱色結晶紫..............0.26質量份.甲基乙基酮..............40質量份.1-甲氧基-2-丙醇............20質量份. Morphine. . . . . . . . . . . . . . . . 0.013 parts by mass. Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate methacrylic acid (copolymer composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, acid value: 150) . . . . . . . . . . 15 parts by mass. Addition of 1/2 molar ratio of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate. . . . . . . . . . . . . . 6.0 parts by mass. N-butyl-2 chloro-methyl acridone. . . . . . . . . 0.05 parts by weight. 2,2-bis(4-(methacryloxypentapentaethoxy)phenyl)propane (manufactured by Shin-Nakamura Chemical Co., Ltd., BPE-500). . . . . . . . . . . . 6.0 parts by weight. 2,2-bis(o-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole. 2.17 parts by mass. Victoria Blue. . . . . . . . . . . . . . 0.02 parts by mass. Hidden crystal violet. . . . . . . . . . . . . . 0.26 parts by mass. Methyl ethyl ketone. . . . . . . . . . . . . . 40 parts by mass. 1-methoxy-2-propanol. . . . . . . . . . . . 20 parts by mass

-圖案形成材料之製作-- Production of pattern forming materials -

如第1圖所示,使用16微米厚之聚對苯二甲酸乙二酯薄膜(東麗公司製、16QS52)做為前述之支撐體1,並藉由條塗機將前述之感光性樹脂組成物溶液塗布在前述支撐體1上,並於80℃、熱風循環式乾燥機中進行乾燥30分鐘,使形成乾燥後之厚度為約15微米的感光層2,接著於該感光層上,以積層機積層厚度為20微米之聚丙烯薄膜的前述保護薄膜3。As shown in Fig. 1, a 16 μm thick polyethylene terephthalate film (manufactured by Toray Industries, Inc., 16QS52) was used as the support 1 described above, and the aforementioned photosensitive resin was composed by a bar coater. The solution was coated on the support 1 and dried in a hot air circulating dryer at 80 ° C for 30 minutes to form a photosensitive layer 2 having a thickness of about 15 μm after drying, followed by lamination on the photosensitive layer. The aforementioned protective film 3 of a polypropylene film having a thickness of 20 μm.

<圖案之形成><Formation of pattern> -積層體之製作--Production of laminated body -

接著,對於當做前述基材之經配線完成的覆銅積層板(無貫穿孔、銅厚度為12微米)之表面實施化學研磨處理並調製。在該覆銅積層板上,使前述圖案形成材料之感光層接於前述覆銅積層,並且一邊將前述感光性薄膜中的保護薄膜予以剝離,一邊使用自動切割積層機(MACH730、伯東(股)公司製)進行積層,進而調製出依照前述覆銅積層板、前述感光層、前述聚對苯二甲酸乙二酯薄膜(支撐體)的順序積層而成的積層體。壓合條件:壓合輥溫度為105℃、壓合輥壓力為0.3 MPa、積層速度為1公尺/分鐘。Next, the surface of the copper clad laminate (without through holes and having a copper thickness of 12 μm) which was subjected to wiring as described above was subjected to chemical polishing treatment and prepared. In the copper clad laminate, the photosensitive layer of the pattern forming material is bonded to the copper clad layer, and the protective film in the photosensitive film is peeled off, and an automatic cutting laminator (MACH730, Bodong) is used. The laminates of the company are laminated to form a laminate in which the copper-clad laminate, the photosensitive layer, and the polyethylene terephthalate film (support) are laminated in this order. Pressing conditions: the temperature of the laminating roller was 105 ° C, the pressure of the laminating roller was 0.3 MPa, and the laminating speed was 1 m/min.

<保護薄膜剝離性之評價><Evaluation of Protective Film Peelability>

以反射顯微鏡對於前述保護薄膜剝離性後之感光層表面實施表面觀察,並評價剝離痕跡之有無。結果示於表3中。The surface of the photosensitive layer after the peeling property of the protective film was observed by a reflection microscope, and the presence or absence of peeling marks was evaluated. The results are shown in Table 3.

◎:無剝離痕跡且極為平滑;○:無剝離痕跡;×:可見到條紋、皺褶等之剝離痕跡。◎: no peeling marks and extremely smooth; ○: no peeling marks; ×: peeling marks such as stripes and wrinkles were observed.

<自支撐體薄膜之剝離><Separation of self-supporting film>

以目視觀察從前述支撐體薄膜剝離保護薄膜是否是平順地剝除。結果示於表3中。Whether or not the protective film was peeled off from the aforementioned support film was visually observed to be smoothly peeled off. The results are shown in Table 3.

◎:保護薄膜可以平順地從支撐體薄膜被剝離;○:感光層不與保護薄膜一起從支撐體薄膜被剝離;×:感光層與保護薄膜一起從支撐體薄膜被剝離。◎: The protective film can be peeled off smoothly from the support film; ○: the photosensitive layer is not peeled off from the support film together with the protective film; ×: The photosensitive layer is peeled off from the support film together with the protective film.

<熔融黏度之測定><Measurement of Melt Viscosity>

前述熔融黏度之測定,係按照下述實施關於在將前述感光性組成物溶液塗布於前述支撐體上時之前述感光性組成物於35℃之熔融黏度之測定。The measurement of the melt viscosity is carried out by measuring the melt viscosity of the photosensitive composition at 35 ° C when the photosensitive composition solution is applied onto the support.

熔融黏度之測定器係使用流速計(DAR、RECOLICA公製),於昇溫速度5℃/分鐘及頻率數為1Hz之條件下實施。測定結果示於表3中。The melt viscosity measuring instrument was carried out using a flow rate meter (DAR, RECOLICA GM) at a temperature increase rate of 5 ° C / min and a frequency of 1 Hz. The measurement results are shown in Table 3.

<顯像時間><development time>

在前述解像度之測定中,測定從噴灑前述之顯像液後到溶解除去前述之未硬化區域為止的顯像時間。In the measurement of the above resolution, the development time from the spraying of the above-described developing liquid to the dissolution and removal of the aforementioned unhardened region was measured.

(1)最短顯像時間的測定方法從前述積層體剝離取得前述之聚對苯二甲酸乙二酯薄膜(支撐體)、緩衝層及包覆層,以0.15MPa的壓力,將30℃的1質量%碳酸鈉水溶液噴灑在覆銅積層板上的前述感光層之全面,測定開始噴灑自碳酸鈉水溶液直到溶解除去覆銅積層板上的前述感光層為止所需要的時間,以此當做最短顯像時間。結果最短顯像時間為3秒。(1) Method for measuring the shortest development time The polyethylene terephthalate film (support), the buffer layer and the coating layer were obtained by peeling off the above-mentioned laminated body, and the temperature was 0.15 MPa at a pressure of 0.15 MPa. The mass % sodium carbonate aqueous solution was sprayed on the entire surface of the photosensitive layer on the copper clad laminate, and the time required to start spraying from the sodium carbonate aqueous solution until the photosensitive layer on the copper clad laminate was dissolved and removed was measured as the shortest image. time. The shortest imaging time is 3 seconds.

<解像度><resolution>

(2)感度的測定相對於前述積層體中圖案形成材料的前述之感光層,使用具有405奈米的雷射光源的圖案形成裝置當做前述之光照射手段,以21 / 2 倍間隔照射從0.1 mJ/cm2 至100 mJ/cm2 的不同光能量之光進行曝光,以使前述感光層的一部分區域硬化。在室溫下靜置10分鐘後,自前述積層體剝取前述聚對苯二甲酸乙二酯薄膜(支撐體),以0.15 MPa壓力及前述(1)所求得的最短顯像時間之2倍時間,將碳酸鈉水溶液(30℃、1質量%)噴灑在覆銅積層板上之感光層全面上,以溶解去除未硬化區域,測定殘留的硬化區域之厚度。(2) Measurement of Sensitivity A pattern forming apparatus having a laser light source of 405 nm was used as the above-described light-emitting means at the interval of 2 1 / 2 with respect to the above-mentioned photosensitive layer of the pattern forming material in the above-mentioned laminated body. Light of different light energies of 0.1 mJ/cm 2 to 100 mJ/cm 2 is exposed to harden a part of the aforementioned photosensitive layer. After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled off from the laminate, and the pressure of 0.15 MPa and the shortest development time obtained in the above (1) were 2 Over time, an aqueous solution of sodium carbonate (30 ° C, 1% by mass) was sprayed on the entire photosensitive layer of the copper clad laminate to dissolve and remove the unhardened region, and the thickness of the remaining hardened region was measured.

其次,繪製光之照射量與硬化層之厚度的關係,以得到感度曲線。從如此得到的感度曲線,求取硬化區域之厚度成為30微米時的光能量,將之當做使感光層硬化所需要的光能量。Next, the relationship between the amount of irradiation of light and the thickness of the hardened layer is plotted to obtain a sensitivity curve. From the sensitivity curve thus obtained, the light energy at a thickness of 30 μm in the hardened region was determined as the light energy required to harden the photosensitive layer.

(3)解像度之測定以和前述(1)之最短現像時間之評價方法相同的方法及條件作成前述積層體,在室溫(23℃,55%RH)靜置10分鐘。從所得到的積層體之前述聚對苯二甲酸乙二酯薄膜(支撐體)上方,使用前述之圖案形成裝置,以列/間隙=1/1、以1微米刻度進行線寬5微米~20微米為止的各線寬之曝光,以5微米刻度進行列寬20微米~50微米為止的各線寬之曝光。此時之曝光量係為使前述(2)測定的前述圖案形成材料之感光層硬化時之所必需要的光能量。在室溫下靜置10分鐘後,從前述積層體剝取聚對苯二甲酸乙二酯薄膜(支撐體)。在覆銅積層板上的感光層之全面上,以0.15MPa的壓力及以前述(1)所求得的最短顯像時間之2倍時間噴灑作為前述顯像液的碳酸鈉水溶液(30℃,1質量%),以溶解去除未硬化區域。以光學顯微透鏡觀察如此所得到的附有硬化樹脂圖案之覆銅積層板的表面,測定硬化樹脂圖案之列上沒有堵塞、浪紋等異常的最小列寬,以其當作解像度。該解像度係數值愈小愈佳。(3) Measurement of resolution The laminate was formed in the same manner and under the same conditions as the evaluation method of the shortest image time of the above (1), and allowed to stand at room temperature (23 ° C, 55% RH) for 10 minutes. From the above-mentioned polyethylene terephthalate film (support) of the obtained laminate, using the above-described pattern forming apparatus, the line width is 5 μm to 20 with a column/gap=1/1 and a 1 μm scale. The exposure of each line width up to the micron is performed with a line width of 20 μm to 50 μm on a 5 μm scale. The exposure amount at this time is the light energy necessary for curing the photosensitive layer of the pattern forming material measured in the above (2). After standing at room temperature for 10 minutes, a polyethylene terephthalate film (support) was peeled off from the above laminated body. On the entire surface of the photosensitive layer on the copper clad laminate, a sodium carbonate aqueous solution (30 ° C, as the above-mentioned developing solution) was sprayed at a pressure of 0.15 MPa and twice the shortest development time obtained in the above (1). 1% by mass) to dissolve and remove the unhardened region. The surface of the thus obtained copper-clad laminate having the cured resin pattern obtained was observed with an optical microlens, and the minimum column width without abnormalities such as clogging or waviness on the column of the cured resin pattern was measured and used as the resolution. The smaller the resolution coefficient value, the better.

<曝光速度><exposure speed>

使用前述之圖案形成裝置,改變曝光光和前述感光層之相對移動速度,求取能形成一般的配線圖案之速度。曝光係從前述聚對苯二甲酸乙二酯薄膜(支撐體)側對於前述所調製的積層體之感光層進行。另外,此設定速度愈快者,能夠有效率地形成圖案。Using the pattern forming apparatus described above, the relative moving speed of the exposure light and the photosensitive layer is changed, and the speed at which a general wiring pattern can be formed is obtained. The exposure was carried out from the side of the polyethylene terephthalate film (support) to the photosensitive layer of the above-mentioned laminated body. In addition, the faster the setting speed is, the pattern can be formed efficiently.

<圖案形成裝置><pattern forming device>

使用具有做為前述光照射機構之如第13圖~第18圖所示之複合波雷射光源、和做為前述光調變機構之可控制成僅驅動如第2圖所示之在主掃描方向上排列1,024個微鏡片陣列中之在副掃描方向上排列768組微鏡片1,024個×256列的DMD50,以及排列有如第3圖所示的一面為複曲面之微透鏡474成陣列狀的微透鏡陣列472、與將通過該微透鏡陣列之光成像於前述圖案形成材料的光學系統480、482之圖案形成裝置。The composite laser light source having the light irradiation mechanism as shown in FIGS. 13 to 18 and the light modulation mechanism can be controlled to drive only the main scanning as shown in FIG. Between the 1,024 microlens arrays, 768 sets of microlenses 1,024 x 256 columns of DMD 50 are arranged in the sub-scanning direction, and microlenses 474 arranged as a toric surface as shown in FIG. 3 are arranged in an array. A lens array 472 and a pattern forming device for imaging the optical systems 480, 482 of the pattern forming material by light passing through the microlens array.

〈參考例2〉<Reference Example 2>

相對於實施例1,除了將M/B比之1:0.80代替為1:0.88以外,和實施例1同樣地製作參考例2之圖案形成材料,並和實施例1同樣地進行評價。其結果示於表3中。The pattern forming material of Reference Example 2 was produced in the same manner as in Example 1 except that the M/B ratio was 1:0.80 instead of 1:0.88, and the evaluation was carried out in the same manner as in Example 1. The results are shown in Table 3.

〈實施例3〉〉<Example 3>〉

相對於實施例1,除了將M/B比之1:0.80代替為1:0.72以外,和實施例1同樣地製作實施例3之圖案形成材料,並和實施例1同樣地進行評價。其結果示於表3中。The pattern forming material of Example 3 was produced in the same manner as in Example 1 except that the M/B ratio was 1:0.80 instead of 1:0.72, and the evaluation was carried out in the same manner as in Example 1. The results are shown in Table 3.

〈比較例1〉<Comparative Example 1> <感光性組成物溶液之調製><Preparation of photosensitive composition solution>

將下述之各成分予以混合而調製成M/B比為1:0.93之感光性組成物溶液。Each of the following components was mixed to prepare a photosensitive composition solution having an M/B ratio of 1:0.93.

.啡噻................0.013質量份.甲基丙烯酸甲酯/丙烯酸2-乙基己酯/甲基丙烯酸苄酯甲基丙烯酸(共聚物組成(質量比):50/20/7/23、質量平均分子量:90,000、酸價:150)..........15質量份.六亞甲基二異氰酸酯和四環氧乙烷單甲基丙烯酸酯之1/2莫耳比的加成物..............7.0質量份.N-丁基-2氯-甲基吖啶酮.........0.05重量份.2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷(新中村化學公司製、BPE-500)............7.0重量份.2,2-雙(o-氯苯基)-4,4’,5,5’-四苯基聯咪唑.2.17質量份.維多利亞藍..............0.02質量份.隱色結晶紫..............0.26質量份.甲基乙基酮..............40質量份.1-甲氧基-2-丙醇............20質量份. Morphine. . . . . . . . . . . . . . . . 0.013 parts by mass. Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate methacrylic acid (copolymer composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, acid value: 150) . . . . . . . . . . 15 parts by mass. Addition of 1/2 molar ratio of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate. . . . . . . . . . . . . . 7.0 parts by mass. N-butyl-2 chloro-methyl acridone. . . . . . . . . 0.05 parts by weight. 2,2-bis(4-(methacryloxypentapentaethoxy)phenyl)propane (manufactured by Shin-Nakamura Chemical Co., Ltd., BPE-500). . . . . . . . . . . . 7.0 parts by weight. 2,2-bis(o-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole. 2.17 parts by mass. Victoria Blue. . . . . . . . . . . . . . 0.02 parts by mass. Hidden crystal violet. . . . . . . . . . . . . . 0.26 parts by mass. Methyl ethyl ketone. . . . . . . . . . . . . . 40 parts by mass. 1-methoxy-2-propanol. . . . . . . . . . . . 20 parts by mass

相對於實施例1,除了將前述之感光性組成物溶液塗布於前述支撐體以外,和實施例1同樣地製作比較例1之圖案形成材料,並和實施例1同樣地進行評價。其結果示於表3中。In the same manner as in Example 1, except that the photosensitive composition solution described above was applied to the support, the pattern forming material of Comparative Example 1 was produced and evaluated in the same manner as in Example 1. The results are shown in Table 3.

〈比較例2〉<Comparative Example 2> <感光性組成物溶液之調製><Preparation of photosensitive composition solution>

將下述之各成分予以混合而調製成M/B比為1:0.65之感光性組成物溶液。Each of the following components was mixed to prepare a photosensitive composition solution having an M/B ratio of 1:0.65.

.啡噻................0.013質量份.甲基丙烯酸甲酯/丙烯酸2-乙基己酯/甲基丙烯酸苄酯甲基丙烯酸(共聚物組成(質量比):50/20/7/23、質量平均分子量:90,000、酸價:150)..........15質量份.六亞甲基二異氰酸酯和四環氧乙烷單甲基丙烯酸酯之1/2莫耳比的加成物..............4.5質量份.N-丁基-2氯-甲基吖啶酮.........0.05重量份.2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷(新中村化學公司製、BPE-500)............4.5重量份.2,2-雙(o-氯苯基)-4,4’,5,5’-四苯基聯咪唑.2.17質量份.維多利亞藍..............0.02質量份.隱色結晶紫..............0.26質量份.甲基乙基酮..............40質量份.1-甲氧基-2-丙醇............20質量份. Morphine. . . . . . . . . . . . . . . . 0.013 parts by mass. Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate methacrylic acid (copolymer composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, acid value: 150) . . . . . . . . . . 15 parts by mass. Addition of 1/2 molar ratio of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate. . . . . . . . . . . . . . 4.5 parts by mass. N-butyl-2 chloro-methyl acridone. . . . . . . . . 0.05 parts by weight. 2,2-bis(4-(methacryloxypentapentaethoxy)phenyl)propane (manufactured by Shin-Nakamura Chemical Co., Ltd., BPE-500). . . . . . . . . . . . 4.5 parts by weight. 2,2-bis(o-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole. 2.17 parts by mass. Victoria Blue. . . . . . . . . . . . . . 0.02 parts by mass. Hidden crystal violet. . . . . . . . . . . . . . 0.26 parts by mass. Methyl ethyl ketone. . . . . . . . . . . . . . 40 parts by mass. 1-methoxy-2-propanol. . . . . . . . . . . . 20 parts by mass

相對於實施例1,除了將前述之感光性組成物溶液塗布於前述支撐體以外,和實施例1同樣地製作比較例2之圖案形成材料,並和實施例1同樣地進行評價。其結果示於表3中。In the same manner as in Example 1, except that the photosensitive composition solution described above was applied to the support, the pattern forming material of Comparative Example 2 was produced and evaluated in the same manner as in Example 1. The results are shown in Table 3.

由表3之結果,可明白:本發明之圖案形成材料之實施例1~3,M/B比係在1:0.72~1:0.88之範圍、無保護薄膜之剝離痕跡、也沒有發生從支撐體薄膜剝離之現象。又可明白:於比較例1中,當M/B比為1:0.93時,在35℃之感光層的分子量黏度就會低到9.0×103 ,並產生保護薄膜之剝離痕跡,且感光層也會從支撐體薄膜剝離。可明白於比較例2中,雖然不發生前述之剝離痕跡及感光層之剝離;然而感光層之感度難免會低到25mJ/cm2From the results of Table 3, it can be understood that in Examples 1 to 3 of the pattern forming material of the present invention, the M/B ratio is in the range of 1:0.72 to 1:0.88, and the peeling trace of the unprotected film does not occur from the support. The phenomenon of peeling off the body film. It can be understood that in Comparative Example 1, when the M/B ratio is 1:0.93, the molecular weight viscosity of the photosensitive layer at 35 ° C is as low as 9.0 × 10 3 , and peeling marks of the protective film are generated, and the photosensitive layer is formed. It will also peel off from the support film. It can be understood that in Comparative Example 2, although the above-mentioned peeling marks and peeling of the photosensitive layer did not occur, the sensitivity of the photosensitive layer was inevitably lowered to 25 mJ/cm 2 .

又,可以明白:依照本發明之圖案形成材料,一方面感光層之感度可以維持於高感度,一方面可以自動切割積層機來進行極良好的積層,且可以良好效率形成圖案。Further, it can be understood that, according to the pattern forming material of the present invention, on the one hand, the sensitivity of the photosensitive layer can be maintained at a high sensitivity, and on the other hand, the laminator can be automatically cut to perform extremely good lamination, and the pattern can be formed with good efficiency.

依照本發明的話,即能夠提供一種感光性組成物之室溫下的熔融黏度為合適的、且可以抑制感光層之感度下降,同時藉由圖案形成材料於基體上形成積層體時不發生保護薄膜之剝離痕跡,並可以平穩地剝離保護薄膜、能夠以良好效率形成圖案、並得到高感度且高精細的圖案之圖案形成材料,以及提供一種具備該圖案形成材料之圖案形成裝置、與一種使用前述圖案形成材料之圖案形成方法。According to the present invention, it is possible to provide a photosensitive composition having a melt viscosity at room temperature which is suitable, and it is possible to suppress a decrease in sensitivity of the photosensitive layer, and a protective film does not occur when a layered body is formed on the substrate by the pattern forming material. a pattern forming material capable of smoothly peeling off a protective film, capable of forming a pattern with good efficiency, and obtaining a high-sensitivity and high-definition pattern, and a pattern forming apparatus having the pattern forming material, and using the foregoing A pattern forming method of a pattern forming material.

依照本發明的圖案形成材料的話,由於是一種能夠得到感光性組成物之室溫下的熔融黏度為合適的、且可以抑制感光層之感度下降,同時藉由圖案形成材料於基體上形成積層體時不發生保護薄膜之剝離痕跡,並可以平穩地剝離保護薄膜、能夠以良好效率形成圖案、並得到高感度且高精細的圖案之圖案形成材料,所以適合於使用來做為保護、層間絕緣膜,並且可以廣泛地使用來做為印刷版配線板(多層配線基板、組裝配線基板等)、彩色濾光片、柱材、肋材、間隔物、隔壁等之液晶顯示器用組件、全息照相、微機器、驗證等之圖案形成用用途上。According to the pattern forming material of the present invention, it is suitable because the melt viscosity at room temperature at which the photosensitive composition can be obtained is suitable, and the sensitivity of the photosensitive layer can be suppressed, and the layered body is formed on the substrate by the pattern forming material. When the protective film is peeled off, the protective film can be smoothly peeled off, a pattern can be formed with good efficiency, and a pattern of high-sensitivity and high-definition pattern can be obtained, so that it is suitable for use as a protective, interlayer insulating film. And can be widely used as a component of a liquid crystal display such as a printed wiring board (multilayer wiring board, assembly wiring board, etc.), a color filter, a pillar, a rib, a spacer, a partition, etc., hologram, micro It is used for pattern formation such as machine and verification.

BS...光束點BS. . . Beam point

1...支撐體1. . . Support

2...感光層2. . . Photosensitive layer

3...保護薄膜3. . . Protective film

50...數位微鏡片裝置(DMD)50. . . Digital microlens device (DMD)

55a...微透鏡55a. . . Microlens

55...微透鏡陣列55. . . Microlens array

56...被曝光面56. . . Exposure surface

59a...開口59a. . . Opening

59...開口陣列59. . . Open array

62...微鏡片62. . . Microlens

144...光照射機構144. . . Light illumination mechanism

150...感光層150. . . Photosensitive layer

155a...微透鏡155a. . . Microlens

454、458...透鏡系統(成像光學系統)454, 458. . . Lens system (imaging optical system)

468...曝光區域468. . . Exposure area

472...微透鏡陣列472. . . Microlens array

474...微透鏡474. . . Microlens

476...開口陣列476. . . Open array

478...開口478. . . Opening

480、482...透鏡系統(成像光學系統)480, 482. . . Lens system (imaging optical system)

第1圖係為顯示圖案形成材料之層構成的說明圖。Fig. 1 is an explanatory view showing a layer configuration of a pattern forming material.

第2A圖係為顯示DMD之使用區域的例子之圖的一例。Fig. 2A is an example of a diagram showing an example of a use area of the DMD.

第2B圖係為顯示DMD之使用區域的例子之圖的一例。Fig. 2B is an example of a diagram showing an example of a use area of the DMD.

第3A圖不同於結合光學系之其他的曝光頭之構成的沿著光軸之斷面圖之一例。Fig. 3A is an example of a cross-sectional view along the optical axis which is different from the constitution of the other exposure heads of the optical system.

第3B圖係為顯示在不使用微透鏡陣列等之情況下的投影在被曝光面之光像的平面圖之一例。Fig. 3B is an example of a plan view showing an optical image projected on the surface to be exposed without using a microlens array or the like.

第3C圖係為顯示在使用微透鏡陣列等之情況下的投影在被曝光面之光像的平面圖之一例。The 3Cth diagram is an example of a plan view showing an optical image projected on the surface to be exposed when a microlens array or the like is used.

第4圖係為以等高線表示構成DMD之微鏡片的反射面之畸變之圖的一例。Fig. 4 is an example of a graph showing distortion of a reflecting surface of a microlens constituting a DMD by a contour line.

第5A圖係為顯示在該鏡片之2條對角線方向上的前述微鏡片之反射面的畸變之曲線圖的一例。Fig. 5A is an example of a graph showing distortion of the reflecting surface of the microlens in the diagonal direction of the two lenses.

第5B圖係為和第15A圖同樣之顯示在該鏡片之2條對角線方向上的前述微鏡片之反射面的畸變之曲線圖的一例。Fig. 5B is an example of a graph showing distortion of the reflection surface of the microlens in the two diagonal directions of the lens, similar to Fig. 15A.

第6A圖係為可使用於圖案形成裝置之微透鏡陣列的正面圖之一例。Fig. 6A is an example of a front view of a microlens array that can be used in a patterning device.

第6B圖係為可使用於圖案形成裝置之微透鏡陣列的側面圖之一例。Fig. 6B is an example of a side view of a microlens array which can be used in a pattern forming apparatus.

第7A圖係為構成微透鏡陣列之微透鏡的正面圖之一例。Fig. 7A is an example of a front view of a microlens constituting a microlens array.

第7B圖係為構成微透鏡陣列之微透鏡的側面圖之一例。Fig. 7B is an example of a side view of a microlens constituting a microlens array.

第8A圖係為顯示微透鏡之集光狀態的1個斷面內之示意圖之一例。Fig. 8A is an example of a schematic view showing one of the sections of the light collecting state of the microlens.

第8B圖係為顯示微透鏡之集光狀態的1個斷面內之示意圖之一例。Fig. 8B is an example of a schematic view showing one of the sections of the light collecting state of the microlens.

第9a圖係為顯示本發明之微透鏡的集光附近之光束徑的模擬結果之圖的一例。Fig. 9a is an example of a graph showing a simulation result of a beam diameter in the vicinity of the collected light of the microlens of the present invention.

第9b圖係為和第9a圖同樣之顯示另一個位置的模擬結果之圖的一例。Fig. 9b is an example of a graph showing the simulation result at another position, similar to Fig. 9a.

第9c圖係為和第9a圖同樣之顯示另一個位置的模擬結果之圖的一例。Fig. 9c is an example of a graph showing a simulation result at another position, similar to Fig. 9a.

第9d圖係為和第9a圖同樣之顯示另一個位置的模擬結果之圖的一例。The ninth figure is an example of a graph showing the simulation result at another position as in the case of Fig. 9a.

第10a圖係為顯示在習用的圖案形成方法中之微透鏡的集光附近之光束徑的模擬結果之圖的一例。Fig. 10a is an example of a graph showing a simulation result of a beam diameter in the vicinity of the collected light of the microlens in the conventional pattern forming method.

第10b圖係為和第10a圖同樣之顯示另一個位置的模擬結果之圖的一例。Fig. 10b is an example of a graph showing the simulation results at another position, similar to Fig. 10a.

第10c圖係為和第10a圖同樣之顯示另一個位置的模擬結果之圖的一例。Fig. 10c is an example of a graph showing a simulation result at another position, similar to Fig. 10a.

第10d圖係為和第10a圖同樣之顯示另一個位置的模擬結果之圖的一例。Fig. 10d is an example of a graph showing a simulation result at another position, similar to Fig. 10a.

第11A圖係為構成微透鏡陣列之微透鏡的正面圖之一例。Fig. 11A is an example of a front view of a microlens constituting a microlens array.

第11B圖係為構成微透鏡陣列之微透鏡的側面圖之一例。Fig. 11B is an example of a side view of a microlens constituting a microlens array.

第12A圖係為顯示微透鏡之集光狀態的1個斷面內之示意圖之一例。Fig. 12A is an example of a schematic view showing one of the sections of the light collecting state of the microlens.

第12B圖係為顯微透鏡之集光狀態之另外的斷面內之示意圖之一例。Fig. 12B is an example of a schematic view in another section of the light collecting state of the microlens.

第13a圖中之(A)係顯示纖維陣列光源之構成的斜視圖;(B)係為(A)的部分放大圖之一例;(C)及(D)係顯示雷射射出部中發光點的排列之平面圖的一例。(A) in Fig. 13a is a perspective view showing a configuration of a fiber array light source; (B) is an example of a partially enlarged view of (A); (C) and (D) are light-emitting points in a laser emitting portion. An example of a plan of the arrangement.

第13b圖係顯示纖維陣列光源之雷射射出部中發光點的排列之平面圖的一例。Fig. 13b is an example of a plan view showing the arrangement of the light-emitting points in the laser emitting portion of the fiber array light source.

第14圖係顯示多模光纖維之構成的圖之一例。Fig. 14 is a view showing an example of the structure of the multimode optical fiber.

第15圖係顯示複合波雷射光源之構成的平面圖之一例。Fig. 15 is a view showing an example of a plan view of a composite laser light source.

第16圖係顯示雷射模組之構成的平面圖之一例。Fig. 16 is an example of a plan view showing the configuration of a laser module.

第17圖係顯示在第16圖中所示的雷射模組之構成的側面圖之一例。Fig. 17 is a view showing an example of a side view of the configuration of the laser module shown in Fig. 16.

第18圖係顯示在第16圖中所示的雷射模組之構成的部分側面圖。Figure 18 is a partial side elevational view showing the construction of the laser module shown in Figure 16.

50...數位微鏡片裝置(DMD)50. . . Digital microlens device (DMD)

Claims (16)

一種圖案形成材料,其特徵在於:在支撐體上至少具有感光層,該感光層係由含有鹼可溶性黏合劑、聚合性單體及光聚合起始劑之感光性組成物所構成,該鹼可溶性黏合劑和該聚合性單體之總重量的比為1:0.72~1:0.80,該感光性組成物之在30℃~40℃下之熔融黏度為1×105 ~3×106 mPa.s,當將該感光層予以曝光顯像所得到的圖案厚度變成未曝光狀態的厚度之90%時的在波長405奈米的雷射光下之最少曝光量為15mJ/cm2 以下,其中該鹼可溶性黏合劑係乙烯系共聚物,該聚合性單體係包括具有聚胺基甲酸酯基及芳基中之至少任一種的單體。A pattern forming material comprising at least a photosensitive layer on a support, the photosensitive layer being composed of a photosensitive composition containing an alkali-soluble binder, a polymerizable monomer, and a photopolymerization initiator, the alkali solubility The ratio of the total weight of the binder to the polymerizable monomer is 1:0.72 to 1:0.80, and the photosensitive composition has a melt viscosity of 1×10 5 to 3×10 6 mPa at 30° C. to 40° C. s, the minimum exposure amount under laser light having a wavelength of 405 nm when the thickness of the pattern obtained by exposure development of the photosensitive layer becomes 90% of the thickness of the unexposed state is 15 mJ/cm 2 or less, wherein the alkali The soluble binder is an ethylene-based copolymer, and the polymerizable single system includes a monomer having at least one of a polyurethane group and an aryl group. 如申請專利範圍第1項之圖案形成材料,其中該鹼可溶性黏合劑係具有酸性基。 The pattern forming material of claim 1, wherein the alkali-soluble binder has an acidic group. 如申請專利範圍第1項之圖案形成材料,其中該光聚合起始劑係包括從鹵化烴衍生物、氧化膦、六芳基聯咪唑、肟衍生物、有機過氧化物、硫化合物、酮化合物、氧化醯基膦、芳香族鎓鹽及酮肟醚中所選取的至少1種。 The pattern forming material according to claim 1, wherein the photopolymerization initiator comprises a halogenated hydrocarbon derivative, a phosphine oxide, a hexaarylbiimidazole, an anthracene derivative, an organic peroxide, a sulfur compound, a ketone compound. At least one selected from the group consisting of decylphosphine oxide, aromatic sulfonium salt and ketoxime ether. 如申請專利範圍第1項之圖案形成材料,其係由在該感光層上具有保護薄膜所構成。 The pattern forming material of claim 1, which comprises a protective film on the photosensitive layer. 如申請專利範圍第1項之圖案形成材料,其中該感光層之厚度係3~100微米。 The pattern forming material of claim 1, wherein the photosensitive layer has a thickness of 3 to 100 μm. 如申請專利範圍第1項之圖案形成材料,其中該支撐體係含有合成樹脂且為透明的。 The pattern forming material of claim 1, wherein the support system contains a synthetic resin and is transparent. 如申請專利範圍第1項之圖案形成材料,其中該支撐體係長條狀。 The pattern forming material of claim 1, wherein the supporting system is elongated. 一種圖案形成裝置,其特徵在於:具備如申請專利範圍第1項之圖案形成材料,且由至少具有可照射光之光照射機構、和將來自該光照射機構之光予以調變,並對於前述圖案形成材料中的感光層進行曝光之光調變機構所構成。 A pattern forming apparatus comprising: a pattern forming material according to claim 1 of the patent application, wherein the light irradiation mechanism having at least illuminable light and the light from the light irradiation means are modulated, and The photosensitive layer in the pattern forming material is configured to perform an exposure light modulation mechanism. 一種圖案形成方法,其特徵在於:至少包括對於如申請專利範圍第1項之圖案形成材料中的該感光層進行曝光、顯像。 A pattern forming method comprising at least exposing and developing the photosensitive layer in the pattern forming material according to claim 1 of the patent application. 如申請專利範圍第9項之圖案形成方法,其中該支撐體係配線形成完畢的印刷配線基板。 The pattern forming method of claim 9, wherein the support system is formed by wiring the printed wiring board. 如申請專利範圍第9項之圖案形成方法,其係基於形成的圖案資訊來進行圖像模樣之曝光。 The pattern forming method of claim 9 is characterized in that the image pattern is exposed based on the formed pattern information. 如申請專利範圍第9項之圖案形成方法,其特徵在於:使用照射光之光照射機構、與基於形成的圖案資訊來調變自該光照射機構所照射之光的光調變機構,來進行曝光;該光調變機構係由更進一步地具有基於形成的圖案資訊而生成控制信號之圖案信號生成機構所構成,並隨著該圖案信號生成機構所產生的控制信號,來調變從該光照射機構所照射的光。 The pattern forming method according to claim 9 is characterized in that the light irradiation means for irradiating light and the light modulation means for adjusting the light irradiated from the light irradiation means based on the formed pattern information are used. The light modulation mechanism is configured by a pattern signal generating mechanism that further generates a control signal based on the formed pattern information, and is modulated from the light according to a control signal generated by the pattern signal generating unit. The light irradiated by the illumination mechanism. 如申請專利範圍第12項之圖案形成方法,其中該光調變機構係由具有n個圖素部所構成,且可以隨著形成的圖案資訊來控制由該n個圖素部中而來的連續配置之任意小於n個的前述圖素部。 The pattern forming method of claim 12, wherein the light modulation mechanism is composed of n pixel portions, and can be controlled by the n pixel portions along with the formed pattern information. Any of the aforementioned pixel parts of the continuous configuration is less than n. 如申請專利範圍第9項之圖案形成方法,其中該曝光係使用395~415奈米之波長的雷射光來進行的。 The pattern forming method of claim 9, wherein the exposure is performed using laser light having a wavelength of 395 to 415 nm. 如申請專利範圍第9項之圖案形成方法,其係在進行該顯像之後,再進行圖案之形成。 The pattern forming method of claim 9, wherein the pattern is formed after the development is performed. 如申請專利範圍第15項之圖案形成方法,其中該圖案係為配線圖案,且該圖案之形成係藉由蝕刻處理及鍍敷處理中之至少任一種來進行。 The pattern forming method of claim 15, wherein the pattern is a wiring pattern, and the pattern is formed by at least one of an etching treatment and a plating treatment.
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