JP2005064486A5 - - Google Patents
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- Publication number
- JP2005064486A5 JP2005064486A5 JP2004215678A JP2004215678A JP2005064486A5 JP 2005064486 A5 JP2005064486 A5 JP 2005064486A5 JP 2004215678 A JP2004215678 A JP 2004215678A JP 2004215678 A JP2004215678 A JP 2004215678A JP 2005064486 A5 JP2005064486 A5 JP 2005064486A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- thin film
- film transistor
- crystalline semiconductor
- ridges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 41
- 239000004065 semiconductor Substances 0.000 claims 38
- 239000010409 thin film Substances 0.000 claims 29
- 239000013078 crystal Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 11
- 230000001678 irradiating effect Effects 0.000 claims 9
- 230000015572 biosynthetic process Effects 0.000 claims 7
- 230000010355 oscillation Effects 0.000 claims 7
- 238000002425 crystallisation Methods 0.000 claims 4
- 230000008025 crystallization Effects 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 4
- 238000009832 plasma treatment Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000011368 organic material Substances 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004215678A JP4624023B2 (ja) | 2003-07-31 | 2004-07-23 | 半導体装置、及びその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003284536 | 2003-07-31 | ||
| JP2004215678A JP4624023B2 (ja) | 2003-07-31 | 2004-07-23 | 半導体装置、及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005064486A JP2005064486A (ja) | 2005-03-10 |
| JP2005064486A5 true JP2005064486A5 (enrdf_load_stackoverflow) | 2007-07-12 |
| JP4624023B2 JP4624023B2 (ja) | 2011-02-02 |
Family
ID=34380273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004215678A Expired - Fee Related JP4624023B2 (ja) | 2003-07-31 | 2004-07-23 | 半導体装置、及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4624023B2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5090690B2 (ja) * | 2006-08-28 | 2012-12-05 | 三菱電機株式会社 | 半導体薄膜の製造方法、薄膜トランジスタの製造方法、及び半導体薄膜の製造装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260285A (ja) * | 1996-03-25 | 1997-10-03 | Sharp Corp | 半導体装置の製造方法 |
| JP4038309B2 (ja) * | 1999-09-10 | 2008-01-23 | セイコーエプソン株式会社 | 半導体装置の製造方法、アクティブマトリクス基板の製造方法 |
| JP2001127302A (ja) * | 1999-10-28 | 2001-05-11 | Hitachi Ltd | 半導体薄膜基板、半導体装置、半導体装置の製造方法および電子装置 |
| JP2002151410A (ja) * | 2000-08-22 | 2002-05-24 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
| JP4316149B2 (ja) * | 2001-02-20 | 2009-08-19 | シャープ株式会社 | 薄膜トランジスタ製造方法 |
| JP2002353141A (ja) * | 2001-03-09 | 2002-12-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
-
2004
- 2004-07-23 JP JP2004215678A patent/JP4624023B2/ja not_active Expired - Fee Related
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