JP2001352073A5 - - Google Patents

Download PDF

Info

Publication number
JP2001352073A5
JP2001352073A5 JP2001091569A JP2001091569A JP2001352073A5 JP 2001352073 A5 JP2001352073 A5 JP 2001352073A5 JP 2001091569 A JP2001091569 A JP 2001091569A JP 2001091569 A JP2001091569 A JP 2001091569A JP 2001352073 A5 JP2001352073 A5 JP 2001352073A5
Authority
JP
Japan
Prior art keywords
region
active layer
semiconductor film
wiring
channel thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001091569A
Other languages
English (en)
Japanese (ja)
Other versions
JP4080168B2 (ja
JP2001352073A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001091569A priority Critical patent/JP4080168B2/ja
Priority claimed from JP2001091569A external-priority patent/JP4080168B2/ja
Publication of JP2001352073A publication Critical patent/JP2001352073A/ja
Publication of JP2001352073A5 publication Critical patent/JP2001352073A5/ja
Application granted granted Critical
Publication of JP4080168B2 publication Critical patent/JP4080168B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001091569A 2000-04-03 2001-03-28 半導体装置の作製方法 Expired - Fee Related JP4080168B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001091569A JP4080168B2 (ja) 2000-04-03 2001-03-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-101576 2000-04-03
JP2000101576 2000-04-03
JP2001091569A JP4080168B2 (ja) 2000-04-03 2001-03-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001352073A JP2001352073A (ja) 2001-12-21
JP2001352073A5 true JP2001352073A5 (enrdf_load_stackoverflow) 2005-04-07
JP4080168B2 JP4080168B2 (ja) 2008-04-23

Family

ID=26589386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001091569A Expired - Fee Related JP4080168B2 (ja) 2000-04-03 2001-03-28 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4080168B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4403354B2 (ja) * 2002-09-11 2010-01-27 ソニー株式会社 薄膜回路基板
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
TWI220072B (en) 2003-02-19 2004-08-01 Toppoly Optoelectronics Corp TFT structure with LDD region and manufacturing process of the same
JP4510396B2 (ja) * 2003-03-28 2010-07-21 統寶光電股▲分▼有限公司 薄膜トランジスタの製造方法
KR101675113B1 (ko) 2010-01-08 2016-11-11 삼성전자주식회사 트랜지스터 및 그 제조방법
JP6494341B2 (ja) * 2015-03-13 2019-04-03 株式会社ジャパンディスプレイ 表示装置

Similar Documents

Publication Publication Date Title
US7394098B2 (en) Thin film transistor, its manufacture method and display device
JP4627961B2 (ja) 半導体装置の作製方法
JP2003197521A5 (enrdf_load_stackoverflow)
JP2003163221A5 (enrdf_load_stackoverflow)
KR100769775B1 (ko) 반도체 장치 및 그 제조 방법
KR101169058B1 (ko) 박막 트랜지스터 및 그 제조방법
WO2002031871A1 (en) Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof
JP2005303299A (ja) 電子素子及びその製造方法
JP2000058839A5 (ja) 半導体装置およびその作製方法
JP2001352073A5 (enrdf_load_stackoverflow)
JP2010287645A (ja) 薄膜トランジスタおよびその製造方法
JP2004039701A (ja) 半導体装置の作製方法
JP2006019701A (ja) 表示装置の製造方法
JP2002175028A5 (enrdf_load_stackoverflow)
JP2000208777A5 (ja) 半導体装置およびその作製方法並びに電子機器
JPH06104432A (ja) 薄膜状半導体装置およびその作製方法
JP2001319877A5 (enrdf_load_stackoverflow)
JP2004342753A (ja) 半導体装置
JP2003318108A5 (enrdf_load_stackoverflow)
JP2002222960A5 (enrdf_load_stackoverflow)
JP3501874B2 (ja) 金属配線の作製方法
JP2009246235A (ja) 半導体基板の製造方法、半導体基板及び表示装置
JP3921384B2 (ja) 半導体装置の製造方法
JP2000228526A5 (ja) 半導体装置の作製方法
JP4317332B2 (ja) アクティブマトリクス型表示装置用基板の製造方法