JP2002175028A5 - - Google Patents
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- Publication number
- JP2002175028A5 JP2002175028A5 JP2001227219A JP2001227219A JP2002175028A5 JP 2002175028 A5 JP2002175028 A5 JP 2002175028A5 JP 2001227219 A JP2001227219 A JP 2001227219A JP 2001227219 A JP2001227219 A JP 2001227219A JP 2002175028 A5 JP2002175028 A5 JP 2002175028A5
- Authority
- JP
- Japan
- Prior art keywords
- shape
- conductive
- thin film
- film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 227
- 239000010410 layer Substances 0.000 claims 192
- 239000004065 semiconductor Substances 0.000 claims 179
- 239000010409 thin film Substances 0.000 claims 110
- 239000012535 impurity Substances 0.000 claims 84
- 238000000034 method Methods 0.000 claims 22
- 238000004519 manufacturing process Methods 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 19
- 230000015572 biosynthetic process Effects 0.000 claims 17
- 238000005530 etching Methods 0.000 claims 15
- 238000002425 crystallisation Methods 0.000 claims 9
- 239000010949 copper Substances 0.000 claims 6
- 239000003054 catalyst Substances 0.000 claims 5
- 230000008025 crystallization Effects 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 238000010030 laminating Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 239000003990 capacitor Substances 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 238000005499 laser crystallization Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 238000003860 storage Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001227219A JP4127466B2 (ja) | 2000-07-31 | 2001-07-27 | 半導体装置の作製方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-230401 | 2000-07-31 | ||
| JP2000230401 | 2000-07-31 | ||
| JP2000-301390 | 2000-09-29 | ||
| JP2000-301389 | 2000-09-29 | ||
| JP2000301389 | 2000-09-29 | ||
| JP2000301390 | 2000-09-29 | ||
| JP2001227219A JP4127466B2 (ja) | 2000-07-31 | 2001-07-27 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005050519A Division JP4954482B2 (ja) | 2000-07-31 | 2005-02-25 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002175028A JP2002175028A (ja) | 2002-06-21 |
| JP2002175028A5 true JP2002175028A5 (enrdf_load_stackoverflow) | 2005-09-02 |
| JP4127466B2 JP4127466B2 (ja) | 2008-07-30 |
Family
ID=27481493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001227219A Expired - Fee Related JP4127466B2 (ja) | 2000-07-31 | 2001-07-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4127466B2 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4954482B2 (ja) * | 2000-07-31 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6613620B2 (en) | 2000-07-31 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| KR20060070345A (ko) | 2004-12-20 | 2006-06-23 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| KR101131793B1 (ko) | 2005-05-31 | 2012-03-30 | 삼성전자주식회사 | 폴리 실리콘형 박막트랜지스터 및 이를 갖는 박막트랜지스터 기판 및 이의 제조 방법 |
| KR20070002933A (ko) | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
| KR102658554B1 (ko) * | 2013-12-27 | 2024-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| JP6506545B2 (ja) * | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN107533981B (zh) * | 2015-04-28 | 2020-12-15 | 夏普株式会社 | 半导体装置以及其制造方法 |
| US20210125988A1 (en) * | 2017-03-13 | 2021-04-29 | Semiconductors Energy Laboratory Co., Ltd. | Semiconductor Device and Method for Manufacturing Semiconductor Device |
| KR102835255B1 (ko) * | 2020-10-12 | 2025-07-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치 |
| JP2024051551A (ja) * | 2022-09-30 | 2024-04-11 | 株式会社ジャパンディスプレイ | 半導体装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5683781A (en) * | 1979-12-10 | 1981-07-08 | Matsushita Electric Ind Co Ltd | Image display unit and production thereof |
| JP3398453B2 (ja) * | 1994-02-24 | 2003-04-21 | 株式会社東芝 | 薄膜トランジスタの製造方法 |
| JPH08274336A (ja) * | 1995-03-30 | 1996-10-18 | Toshiba Corp | 多結晶半導体薄膜トランジスタ及びその製造方法 |
| JPH10125928A (ja) * | 1996-10-23 | 1998-05-15 | Semiconductor Energy Lab Co Ltd | 半導体集積回路及びその作製方法 |
| JP3282582B2 (ja) * | 1998-04-21 | 2002-05-13 | 日本電気株式会社 | トップゲート型薄膜トランジスタ及びその製造方法 |
| JP2000012712A (ja) * | 1998-06-25 | 2000-01-14 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP3587292B2 (ja) * | 1998-12-24 | 2004-11-10 | シャープ株式会社 | 半導体装置の製造方法 |
| JP4008133B2 (ja) * | 1998-12-25 | 2007-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3728958B2 (ja) * | 1998-12-28 | 2005-12-21 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
-
2001
- 2001-07-27 JP JP2001227219A patent/JP4127466B2/ja not_active Expired - Fee Related
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