JP2005064487A5 - - Google Patents
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- Publication number
- JP2005064487A5 JP2005064487A5 JP2004215709A JP2004215709A JP2005064487A5 JP 2005064487 A5 JP2005064487 A5 JP 2005064487A5 JP 2004215709 A JP2004215709 A JP 2004215709A JP 2004215709 A JP2004215709 A JP 2004215709A JP 2005064487 A5 JP2005064487 A5 JP 2005064487A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystal grains
- crystalline semiconductor
- aligned
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 50
- 239000010408 film Substances 0.000 claims 41
- 239000013078 crystal Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 10
- 230000010355 oscillation Effects 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 8
- 230000001678 irradiating effect Effects 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 6
- 238000002425 crystallisation Methods 0.000 claims 6
- 230000008025 crystallization Effects 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 4
- 239000003990 capacitor Substances 0.000 claims 3
- 238000009826 distribution Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
- 230000010415 tropism Effects 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 239000011368 organic material Substances 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004215709A JP4578877B2 (ja) | 2003-07-31 | 2004-07-23 | 半導体装置及びその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003284437 | 2003-07-31 | ||
| JP2004215709A JP4578877B2 (ja) | 2003-07-31 | 2004-07-23 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005064487A JP2005064487A (ja) | 2005-03-10 |
| JP2005064487A5 true JP2005064487A5 (enrdf_load_stackoverflow) | 2007-07-12 |
| JP4578877B2 JP4578877B2 (ja) | 2010-11-10 |
Family
ID=34380267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004215709A Expired - Fee Related JP4578877B2 (ja) | 2003-07-31 | 2004-07-23 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4578877B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135609A (ja) * | 2006-11-29 | 2008-06-12 | Mitsubishi Electric Corp | 半導体膜及び薄膜トランジスタ |
| KR100982311B1 (ko) * | 2008-05-26 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
| JP2010157583A (ja) | 2008-12-26 | 2010-07-15 | Toshiba Corp | 縦型ダイオード及びその製造方法並びに半導体記憶装置 |
| KR101041141B1 (ko) | 2009-03-03 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
| KR101015849B1 (ko) * | 2009-03-03 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
| KR101049801B1 (ko) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
| KR101056428B1 (ko) | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치 |
| US8247317B2 (en) * | 2009-09-16 | 2012-08-21 | Applied Materials, Inc. | Methods of solid phase recrystallization of thin film using pulse train annealing method |
| KR101094295B1 (ko) | 2009-11-13 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법 |
| CN202661759U (zh) | 2012-05-17 | 2013-01-09 | 北京京东方光电科技有限公司 | 一种像素结构、双栅像素结构及显示装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151410A (ja) * | 2000-08-22 | 2002-05-24 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
| JP4316149B2 (ja) * | 2001-02-20 | 2009-08-19 | シャープ株式会社 | 薄膜トランジスタ製造方法 |
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2004
- 2004-07-23 JP JP2004215709A patent/JP4578877B2/ja not_active Expired - Fee Related