JP4578877B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4578877B2
JP4578877B2 JP2004215709A JP2004215709A JP4578877B2 JP 4578877 B2 JP4578877 B2 JP 4578877B2 JP 2004215709 A JP2004215709 A JP 2004215709A JP 2004215709 A JP2004215709 A JP 2004215709A JP 4578877 B2 JP4578877 B2 JP 4578877B2
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Japan
Prior art keywords
semiconductor film
film
crystalline semiconductor
crystal grains
metal element
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Expired - Fee Related
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JP2004215709A
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English (en)
Japanese (ja)
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JP2005064487A (ja
JP2005064487A5 (enrdf_load_stackoverflow
Inventor
博信 小路
明久 下村
将樹 古山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004215709A priority Critical patent/JP4578877B2/ja
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Publication of JP2005064487A5 publication Critical patent/JP2005064487A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004215709A 2003-07-31 2004-07-23 半導体装置及びその作製方法 Expired - Fee Related JP4578877B2 (ja)

Priority Applications (1)

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JP2004215709A JP4578877B2 (ja) 2003-07-31 2004-07-23 半導体装置及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003284437 2003-07-31
JP2004215709A JP4578877B2 (ja) 2003-07-31 2004-07-23 半導体装置及びその作製方法

Publications (3)

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JP2005064487A JP2005064487A (ja) 2005-03-10
JP2005064487A5 JP2005064487A5 (enrdf_load_stackoverflow) 2007-07-12
JP4578877B2 true JP4578877B2 (ja) 2010-11-10

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JP2004215709A Expired - Fee Related JP4578877B2 (ja) 2003-07-31 2004-07-23 半導体装置及びその作製方法

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JP (1) JP4578877B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135609A (ja) * 2006-11-29 2008-06-12 Mitsubishi Electric Corp 半導体膜及び薄膜トランジスタ
KR100982311B1 (ko) * 2008-05-26 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
JP2010157583A (ja) 2008-12-26 2010-07-15 Toshiba Corp 縦型ダイオード及びその製造方法並びに半導体記憶装置
KR101041141B1 (ko) 2009-03-03 2011-06-13 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101015849B1 (ko) * 2009-03-03 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
KR101056428B1 (ko) 2009-03-27 2011-08-11 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치
US8247317B2 (en) * 2009-09-16 2012-08-21 Applied Materials, Inc. Methods of solid phase recrystallization of thin film using pulse train annealing method
KR101094295B1 (ko) 2009-11-13 2011-12-19 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법
CN202661759U (zh) 2012-05-17 2013-01-09 北京京东方光电科技有限公司 一种像素结构、双栅像素结构及显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151410A (ja) * 2000-08-22 2002-05-24 Sony Corp 結晶質半導体材料の製造方法および半導体装置の製造方法
JP4316149B2 (ja) * 2001-02-20 2009-08-19 シャープ株式会社 薄膜トランジスタ製造方法

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