JP2006310445A5 - - Google Patents

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Publication number
JP2006310445A5
JP2006310445A5 JP2005129349A JP2005129349A JP2006310445A5 JP 2006310445 A5 JP2006310445 A5 JP 2006310445A5 JP 2005129349 A JP2005129349 A JP 2005129349A JP 2005129349 A JP2005129349 A JP 2005129349A JP 2006310445 A5 JP2006310445 A5 JP 2006310445A5
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JP
Japan
Prior art keywords
semiconductor film
manufacturing
film
island
semiconductor device
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JP2005129349A
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English (en)
Japanese (ja)
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JP4954495B2 (ja
JP2006310445A (ja
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Priority to JP2005129349A priority Critical patent/JP4954495B2/ja
Priority claimed from JP2005129349A external-priority patent/JP4954495B2/ja
Publication of JP2006310445A publication Critical patent/JP2006310445A/ja
Publication of JP2006310445A5 publication Critical patent/JP2006310445A5/ja
Application granted granted Critical
Publication of JP4954495B2 publication Critical patent/JP4954495B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005129349A 2005-04-27 2005-04-27 半導体装置の作製方法 Expired - Fee Related JP4954495B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005129349A JP4954495B2 (ja) 2005-04-27 2005-04-27 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005129349A JP4954495B2 (ja) 2005-04-27 2005-04-27 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006310445A JP2006310445A (ja) 2006-11-09
JP2006310445A5 true JP2006310445A5 (enrdf_load_stackoverflow) 2008-06-05
JP4954495B2 JP4954495B2 (ja) 2012-06-13

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ID=37477017

Family Applications (1)

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JP2005129349A Expired - Fee Related JP4954495B2 (ja) 2005-04-27 2005-04-27 半導体装置の作製方法

Country Status (1)

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JP (1) JP4954495B2 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278739B2 (en) * 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
US7935584B2 (en) 2006-08-31 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor device
US7972943B2 (en) 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5003277B2 (ja) 2007-05-18 2012-08-15 ソニー株式会社 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法
JP5268376B2 (ja) * 2008-01-29 2013-08-21 株式会社日立製作所 不揮発性記憶装置およびその製造方法
KR100982311B1 (ko) 2008-05-26 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
JP2011009583A (ja) * 2009-06-26 2011-01-13 Casio Computer Co Ltd 半導体装置及びその製造方法並びに表示装置
KR101116093B1 (ko) * 2009-06-26 2012-02-21 가시오게산키 가부시키가이샤 반도체장치 및 그 제조방법과 표시장치
TWI650848B (zh) * 2009-08-07 2019-02-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011048968A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5161941B2 (ja) 2010-09-08 2013-03-13 株式会社東芝 半導体装置の製造方法
JP5601363B2 (ja) * 2012-11-19 2014-10-08 ソニー株式会社 半導体装置、薄膜トランジスタ基板および表示装置
JP2017151443A (ja) * 2017-03-15 2017-08-31 株式会社半導体エネルギー研究所 液晶表示装置
WO2019202837A1 (ja) * 2018-04-16 2019-10-24 信越化学工業株式会社 有機ｅｌ用透明乾燥剤及びその使用方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236809A (ja) * 1985-08-10 1987-02-17 Fujitsu Ltd 単結晶成長方法
JP2001250952A (ja) * 2000-03-03 2001-09-14 Seiko Epson Corp 半導体装置の製造方法
JP4514908B2 (ja) * 2000-07-06 2010-07-28 シャープ株式会社 半導体装置の製造方法
JP2002093702A (ja) * 2000-09-14 2002-03-29 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003309068A (ja) * 2002-04-12 2003-10-31 Sharp Corp 半導体膜の形成方法および半導体膜、並びに半導体装置の製造方法および半導体装置
JP2003257859A (ja) * 2001-09-25 2003-09-12 Sharp Corp 結晶性半導体膜及びその形成方法、並びに半導体装置及びその製造方法
JP2004087667A (ja) * 2002-08-26 2004-03-18 Hitachi Cable Ltd 結晶シリコン系薄膜半導体装置の製造方法
JP2004119902A (ja) * 2002-09-27 2004-04-15 Sharp Corp 結晶性半導体膜およびその形成方法、並びに半導体装置およびその製造方法
JP4289018B2 (ja) * 2003-05-19 2009-07-01 日立電線株式会社 太陽光発電素子の製造方法
JP2005108987A (ja) * 2003-09-29 2005-04-21 Sharp Corp 半導体薄膜の結晶化装置および結晶化方法ならびに半導体装置の製造方法および半導体装置
JP2005158836A (ja) * 2003-11-21 2005-06-16 Hitachi Cable Ltd 薄膜半導体装置及びその製造方法
JP2005236130A (ja) * 2004-02-20 2005-09-02 Hitachi Cable Ltd 半導体装置の製造方法
JP2006165463A (ja) * 2004-12-10 2006-06-22 Sanyo Electric Co Ltd 半導体装置の製造方法

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