JP4954495B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4954495B2 JP4954495B2 JP2005129349A JP2005129349A JP4954495B2 JP 4954495 B2 JP4954495 B2 JP 4954495B2 JP 2005129349 A JP2005129349 A JP 2005129349A JP 2005129349 A JP2005129349 A JP 2005129349A JP 4954495 B2 JP4954495 B2 JP 4954495B2
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- film
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- insulating film
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- semiconductor film
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- 239000004065 semiconductor Substances 0.000 title claims description 303
- 238000000034 method Methods 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 230000031700 light absorption Effects 0.000 claims description 167
- 239000013078 crystal Substances 0.000 claims description 72
- 238000000059 patterning Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 239000010408 film Substances 0.000 description 630
- 239000010410 layer Substances 0.000 description 351
- 239000000758 substrate Substances 0.000 description 143
- 239000012535 impurity Substances 0.000 description 67
- 239000011229 interlayer Substances 0.000 description 59
- 239000010409 thin film Substances 0.000 description 58
- 239000000463 material Substances 0.000 description 54
- 230000015572 biosynthetic process Effects 0.000 description 37
- 229910052710 silicon Inorganic materials 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 229910052581 Si3N4 Inorganic materials 0.000 description 33
- 239000002585 base Substances 0.000 description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 229910052814 silicon oxide Inorganic materials 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 239000000853 adhesive Substances 0.000 description 24
- 230000001070 adhesive effect Effects 0.000 description 24
- 238000005530 etching Methods 0.000 description 23
- 238000009826 distribution Methods 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 15
- 229910052715 tantalum Inorganic materials 0.000 description 15
- 239000010936 titanium Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 14
- 150000002894 organic compounds Chemical class 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 230000002829 reductive effect Effects 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 239000003566 sealing material Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 150000002736 metal compounds Chemical class 0.000 description 10
- 239000011368 organic material Substances 0.000 description 10
- 239000003870 refractory metal Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000005224 laser annealing Methods 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 239000000565 sealant Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 4
- 229910019001 CoSi Inorganic materials 0.000 description 4
- 229910008484 TiSi Inorganic materials 0.000 description 4
- -1 VOx Inorganic materials 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910019974 CrSi Inorganic materials 0.000 description 3
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 3
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000002274 desiccant Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920001709 polysilazane Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910004286 SiNxOy Inorganic materials 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002451 CoOx Inorganic materials 0.000 description 1
- 229910016553 CuOx Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910015617 MoNx Inorganic materials 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 229910018316 SbOx Inorganic materials 0.000 description 1
- 229910006398 SnNx Inorganic materials 0.000 description 1
- 229910006854 SnOx Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229910008764 WNx Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910007468 ZnNx Inorganic materials 0.000 description 1
- CHXGWONBPAADHP-UHFFFAOYSA-N [Si].[Si].[Cr] Chemical compound [Si].[Si].[Cr] CHXGWONBPAADHP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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| Publication Number | Publication Date |
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| JP4954495B2 true JP4954495B2 (ja) | 2012-06-13 |
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| JP (1) | JP4954495B2 (enrdf_load_stackoverflow) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8278739B2 (en) * | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
| US7935584B2 (en) | 2006-08-31 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor device |
| US7972943B2 (en) | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5003277B2 (ja) | 2007-05-18 | 2012-08-15 | ソニー株式会社 | 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 |
| JP5268376B2 (ja) * | 2008-01-29 | 2013-08-21 | 株式会社日立製作所 | 不揮発性記憶装置およびその製造方法 |
| KR100982311B1 (ko) | 2008-05-26 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
| JP2011009583A (ja) * | 2009-06-26 | 2011-01-13 | Casio Computer Co Ltd | 半導体装置及びその製造方法並びに表示装置 |
| KR101116093B1 (ko) * | 2009-06-26 | 2012-02-21 | 가시오게산키 가부시키가이샤 | 반도체장치 및 그 제조방법과 표시장치 |
| TWI650848B (zh) * | 2009-08-07 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| WO2011048968A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5161941B2 (ja) | 2010-09-08 | 2013-03-13 | 株式会社東芝 | 半導体装置の製造方法 |
| JP5601363B2 (ja) * | 2012-11-19 | 2014-10-08 | ソニー株式会社 | 半導体装置、薄膜トランジスタ基板および表示装置 |
| JP2017151443A (ja) * | 2017-03-15 | 2017-08-31 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| WO2019202837A1 (ja) * | 2018-04-16 | 2019-10-24 | 信越化学工業株式会社 | 有機ｅｌ用透明乾燥剤及びその使用方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236809A (ja) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | 単結晶成長方法 |
| JP2001250952A (ja) * | 2000-03-03 | 2001-09-14 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP4514908B2 (ja) * | 2000-07-06 | 2010-07-28 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2002093702A (ja) * | 2000-09-14 | 2002-03-29 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP2003309068A (ja) * | 2002-04-12 | 2003-10-31 | Sharp Corp | 半導体膜の形成方法および半導体膜、並びに半導体装置の製造方法および半導体装置 |
| JP2003257859A (ja) * | 2001-09-25 | 2003-09-12 | Sharp Corp | 結晶性半導体膜及びその形成方法、並びに半導体装置及びその製造方法 |
| JP2004087667A (ja) * | 2002-08-26 | 2004-03-18 | Hitachi Cable Ltd | 結晶シリコン系薄膜半導体装置の製造方法 |
| JP2004119902A (ja) * | 2002-09-27 | 2004-04-15 | Sharp Corp | 結晶性半導体膜およびその形成方法、並びに半導体装置およびその製造方法 |
| JP4289018B2 (ja) * | 2003-05-19 | 2009-07-01 | 日立電線株式会社 | 太陽光発電素子の製造方法 |
| JP2005108987A (ja) * | 2003-09-29 | 2005-04-21 | Sharp Corp | 半導体薄膜の結晶化装置および結晶化方法ならびに半導体装置の製造方法および半導体装置 |
| JP2005158836A (ja) * | 2003-11-21 | 2005-06-16 | Hitachi Cable Ltd | 薄膜半導体装置及びその製造方法 |
| JP2005236130A (ja) * | 2004-02-20 | 2005-09-02 | Hitachi Cable Ltd | 半導体装置の製造方法 |
| JP2006165463A (ja) * | 2004-12-10 | 2006-06-22 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
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