JP2005050503A5 - - Google Patents

Download PDF

Info

Publication number
JP2005050503A5
JP2005050503A5 JP2004203663A JP2004203663A JP2005050503A5 JP 2005050503 A5 JP2005050503 A5 JP 2005050503A5 JP 2004203663 A JP2004203663 A JP 2004203663A JP 2004203663 A JP2004203663 A JP 2004203663A JP 2005050503 A5 JP2005050503 A5 JP 2005050503A5
Authority
JP
Japan
Prior art keywords
voltage
sensing signal
generating
generating circuit
boosted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004203663A
Other languages
English (en)
Japanese (ja)
Other versions
JP4723210B2 (ja
JP2005050503A (ja
Filing date
Publication date
Priority claimed from KR10-2003-0048433A external-priority patent/KR100498505B1/ko
Application filed filed Critical
Publication of JP2005050503A publication Critical patent/JP2005050503A/ja
Publication of JP2005050503A5 publication Critical patent/JP2005050503A5/ja
Application granted granted Critical
Publication of JP4723210B2 publication Critical patent/JP4723210B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004203663A 2003-07-15 2004-07-09 昇圧電圧発生回路及び昇圧電圧発生方法 Expired - Fee Related JP4723210B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2003-048433 2003-07-15
KR10-2003-0048433A KR100498505B1 (ko) 2003-07-15 2003-07-15 승압전압 발생회로 및 승압전압 발생방법

Publications (3)

Publication Number Publication Date
JP2005050503A JP2005050503A (ja) 2005-02-24
JP2005050503A5 true JP2005050503A5 (enExample) 2007-06-14
JP4723210B2 JP4723210B2 (ja) 2011-07-13

Family

ID=34056868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004203663A Expired - Fee Related JP4723210B2 (ja) 2003-07-15 2004-07-09 昇圧電圧発生回路及び昇圧電圧発生方法

Country Status (4)

Country Link
US (1) US7084675B2 (enExample)
JP (1) JP4723210B2 (enExample)
KR (1) KR100498505B1 (enExample)
DE (1) DE102004035151A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4211741B2 (ja) * 2005-01-27 2009-01-21 株式会社デンソー 出力カットオフ回路
KR100684472B1 (ko) * 2005-02-18 2007-02-22 한국전자통신연구원 네거티브 전압 레벨 감지기
KR100748459B1 (ko) 2006-02-27 2007-08-13 주식회사 하이닉스반도체 반도체 메모리의 벌크 전압 레벨 감지 장치
WO2008011065A2 (en) * 2006-07-17 2008-01-24 Next Jump, Inc. Communication system and method for narrowcasting
US7847617B2 (en) * 2007-12-11 2010-12-07 Elite Semiconductor Memory Technology Inc. Charge pump and method for operating the same
JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100190049B1 (ko) * 1996-06-25 1999-06-01 윤종용 어레이회로 제어용 내부전압을 이용한 승압전원발생장치
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
JP2000019200A (ja) * 1998-07-01 2000-01-21 Mitsubishi Electric Corp 電位検出回路
JP3713401B2 (ja) * 1999-03-18 2005-11-09 株式会社東芝 チャージポンプ回路
JP2001126477A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体集積回路
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
JP2002270778A (ja) * 2001-03-14 2002-09-20 Toshiba Corp 半導体集積回路
US6737907B2 (en) * 2001-07-03 2004-05-18 International Business Machines Corporation Programmable DC voltage generator system
JP2004055009A (ja) * 2002-07-18 2004-02-19 Renesas Technology Corp 半導体メモリモジュール

Similar Documents

Publication Publication Date Title
US20050146965A1 (en) Semiconductor memory device having internal circuits responsive to temperature data and method thereof
US6791894B2 (en) DRAM power-source controller that reduces current consumption during standby
TWI602045B (zh) 低壓差穩壓器、穩壓裝置及其驅動方法
US7579821B2 (en) Voltage generator
US20110210794A1 (en) Voltage sensing circuit capable of controlling a pump voltage stably generated in a low voltage environment
JP2005050503A5 (enExample)
KR101031736B1 (ko) 내부 전원 회로
US7492646B2 (en) Internal voltage generator of semiconductor device
JP2004355523A (ja) 定電圧回路
KR100977731B1 (ko) 반도체 메모리 장치의 네거티브 워드라인 전압 발생기
JP4723210B2 (ja) 昇圧電圧発生回路及び昇圧電圧発生方法
CN104242606B (zh) 半导体器件
KR100904426B1 (ko) 내부 전압 생성 회로
US9647613B2 (en) Differential amplifier
KR100941631B1 (ko) 반도체장치의 고전압제어회로
TWI390531B (zh) 用以避免寄生二極體漏電流之半導體記憶元件之電壓產生電路
KR100239725B1 (ko) 차지펌프의 펌핑전압 검출회로
US9299413B1 (en) Semiconductor systems
US7772719B2 (en) Threshold voltage control circuit and internal voltage generation circuit having the same
KR101185551B1 (ko) 반도체 집적회로
KR20120097979A (ko) 반도체 장치
KR100718037B1 (ko) 반도체 메모리 장치의 기판 바이어스 전압 발생 회로
KR100881395B1 (ko) 백바이어스 전압 발생 장치와 그의 컨트롤 방법
WO2004077439A3 (en) An apparatus an method for a configurable mirror fast sense amplifier
KR100772705B1 (ko) 내부전압 생성장치