JP2004532516A5 - - Google Patents
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- Publication number
- JP2004532516A5 JP2004532516A5 JP2002574109A JP2002574109A JP2004532516A5 JP 2004532516 A5 JP2004532516 A5 JP 2004532516A5 JP 2002574109 A JP2002574109 A JP 2002574109A JP 2002574109 A JP2002574109 A JP 2002574109A JP 2004532516 A5 JP2004532516 A5 JP 2004532516A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- metal
- forming
- etching
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 17
- 239000002184 metal Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- -1 E10 ions Chemical class 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/810,348 US6444513B1 (en) | 2001-03-19 | 2001-03-19 | Metal gate stack with etch stop layer having implanted metal species |
| PCT/US2002/003556 WO2002075791A2 (en) | 2001-03-19 | 2002-02-06 | Metal gate stack with etch stop layer improved through implantation of metallic atoms |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004532516A JP2004532516A (ja) | 2004-10-21 |
| JP2004532516A5 true JP2004532516A5 (https=) | 2005-12-22 |
| JP4076862B2 JP4076862B2 (ja) | 2008-04-16 |
Family
ID=25203650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002574109A Expired - Fee Related JP4076862B2 (ja) | 2001-03-19 | 2002-02-06 | ウエハ上に金属ゲートを形成する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6444513B1 (https=) |
| EP (1) | EP1371088B1 (https=) |
| JP (1) | JP4076862B2 (https=) |
| KR (1) | KR100819193B1 (https=) |
| CN (1) | CN1246883C (https=) |
| AU (1) | AU2002238059A1 (https=) |
| DE (1) | DE60211318T2 (https=) |
| TW (1) | TWI246721B (https=) |
| WO (1) | WO2002075791A2 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6511911B1 (en) * | 2001-04-03 | 2003-01-28 | Advanced Micro Devices, Inc. | Metal gate stack with etch stop layer |
| US6815364B2 (en) * | 2001-09-28 | 2004-11-09 | Infineon Technologies North America Corp. | Tungsten hard mask |
| US6589858B1 (en) * | 2002-06-07 | 2003-07-08 | Advanced Micro Devices, Inc. | Method of making metal gate stack with etch endpoint tracer layer |
| US6734089B1 (en) * | 2003-01-16 | 2004-05-11 | Micron Technology Inc | Techniques for improving wordline fabrication of a memory device |
| JP2005012179A (ja) * | 2003-05-16 | 2005-01-13 | Seiko Epson Corp | 薄膜パターン形成方法、デバイスとその製造方法及び電気光学装置並びに電子機器、アクティブマトリクス基板の製造方法 |
| US7115488B2 (en) * | 2003-08-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7952118B2 (en) * | 2003-11-12 | 2011-05-31 | Samsung Electronics Co., Ltd. | Semiconductor device having different metal gate structures |
| US7332439B2 (en) * | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
| JP2007080995A (ja) * | 2005-09-13 | 2007-03-29 | Toshiba Corp | 半導体装置 |
| US7511984B2 (en) * | 2006-08-30 | 2009-03-31 | Micron Technology, Inc. | Phase change memory |
| GB0625004D0 (en) * | 2006-12-15 | 2007-01-24 | Nxp Bv | Semiconductor device and method of manufacture |
| KR100953050B1 (ko) * | 2007-10-10 | 2010-04-14 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그의 제조 방법 |
| US8524588B2 (en) | 2008-08-18 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process |
| US8211775B1 (en) | 2011-03-09 | 2012-07-03 | United Microelectronics Corp. | Method of making transistor having metal gate |
| US8519487B2 (en) | 2011-03-21 | 2013-08-27 | United Microelectronics Corp. | Semiconductor device |
| US9852870B2 (en) | 2011-05-23 | 2017-12-26 | Corporation For National Research Initiatives | Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices |
| US20120313149A1 (en) * | 2011-06-09 | 2012-12-13 | Beijing Nmc Co., Ltd. | Semiconductor structure and method for manufacturing the same |
| KR102060834B1 (ko) | 2013-07-23 | 2019-12-30 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
| US9455330B2 (en) * | 2014-11-21 | 2016-09-27 | International Business Machines Corporation | Recessing RMG metal gate stack for forming self-aligned contact |
| EP3038140B1 (en) | 2014-12-22 | 2017-11-22 | IMEC vzw | Method for tuning the effective work function of a metal |
| US9536974B2 (en) * | 2015-04-17 | 2017-01-03 | Globalfoundries Inc. | FET device with tuned gate work function |
| DE202015004528U1 (de) * | 2015-04-27 | 2016-07-28 | Liebherr-Components Biberach Gmbh | Arbeitsmaschine mit leistungsverzweigbarem Antrieb |
| US10658180B1 (en) | 2018-11-01 | 2020-05-19 | International Business Machines Corporation | EUV pattern transfer with ion implantation and reduced impact of resist residue |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403759A (en) * | 1992-10-02 | 1995-04-04 | Texas Instruments Incorporated | Method of making thin film transistor and a silicide local interconnect |
| US5618760A (en) * | 1994-04-12 | 1997-04-08 | The Board Of Trustees Of The Leland Stanford, Jr. University | Method of etching a pattern on a substrate using a scanning probe microscope |
| KR100248123B1 (ko) * | 1997-03-04 | 2000-03-15 | 구본준 | 박막트랜지스터및그의제조방법 |
| TW471049B (en) * | 1998-05-22 | 2002-01-01 | United Microelectronics Corp | Metal gate structure and manufacturing method for metal oxide semiconductor |
| KR100532398B1 (ko) * | 1998-12-24 | 2006-01-27 | 삼성전자주식회사 | 금속막으로구성된게이트전극을갖는모스트랜지스터 |
| US6383879B1 (en) * | 1999-12-03 | 2002-05-07 | Agere Systems Guardian Corp. | Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
| US6444512B1 (en) * | 2000-06-12 | 2002-09-03 | Motorola, Inc. | Dual metal gate transistors for CMOS process |
-
2001
- 2001-03-19 US US09/810,348 patent/US6444513B1/en not_active Expired - Lifetime
-
2002
- 2002-02-06 DE DE60211318T patent/DE60211318T2/de not_active Expired - Lifetime
- 2002-02-06 AU AU2002238059A patent/AU2002238059A1/en not_active Abandoned
- 2002-02-06 KR KR1020037012166A patent/KR100819193B1/ko not_active Expired - Fee Related
- 2002-02-06 CN CNB028067924A patent/CN1246883C/zh not_active Expired - Fee Related
- 2002-02-06 WO PCT/US2002/003556 patent/WO2002075791A2/en not_active Ceased
- 2002-02-06 EP EP02704371A patent/EP1371088B1/en not_active Expired - Lifetime
- 2002-02-06 JP JP2002574109A patent/JP4076862B2/ja not_active Expired - Fee Related
- 2002-02-27 TW TW091103577A patent/TWI246721B/zh not_active IP Right Cessation
- 2002-08-27 US US10/228,045 patent/US6657268B2/en not_active Expired - Fee Related
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