KR100819193B1 - 금속 원자의 주입을 통해 식각 정지 층을 개선시킨 금속게이트 스택 - Google Patents

금속 원자의 주입을 통해 식각 정지 층을 개선시킨 금속게이트 스택 Download PDF

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KR100819193B1
KR100819193B1 KR1020037012166A KR20037012166A KR100819193B1 KR 100819193 B1 KR100819193 B1 KR 100819193B1 KR 1020037012166 A KR1020037012166 A KR 1020037012166A KR 20037012166 A KR20037012166 A KR 20037012166A KR 100819193 B1 KR100819193 B1 KR 100819193B1
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South Korea
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metal
tin
metal layer
layer
gate
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KR1020037012166A
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English (en)
Korean (ko)
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KR20030086609A (ko
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베서폴알.
다크시나-머시스리칸테스와라
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20030086609A publication Critical patent/KR20030086609A/ko
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Assigned to 글로벌파운드리즈 인크. reassignment 글로벌파운드리즈 인크. 권리의 전부이전등록 Assignors: 어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020037012166A 2001-03-19 2002-02-06 금속 원자의 주입을 통해 식각 정지 층을 개선시킨 금속게이트 스택 Expired - Fee Related KR100819193B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/810,348 US6444513B1 (en) 2001-03-19 2001-03-19 Metal gate stack with etch stop layer having implanted metal species
US09/810,348 2001-03-19
PCT/US2002/003556 WO2002075791A2 (en) 2001-03-19 2002-02-06 Metal gate stack with etch stop layer improved through implantation of metallic atoms

Publications (2)

Publication Number Publication Date
KR20030086609A KR20030086609A (ko) 2003-11-10
KR100819193B1 true KR100819193B1 (ko) 2008-04-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037012166A Expired - Fee Related KR100819193B1 (ko) 2001-03-19 2002-02-06 금속 원자의 주입을 통해 식각 정지 층을 개선시킨 금속게이트 스택

Country Status (9)

Country Link
US (2) US6444513B1 (https=)
EP (1) EP1371088B1 (https=)
JP (1) JP4076862B2 (https=)
KR (1) KR100819193B1 (https=)
CN (1) CN1246883C (https=)
AU (1) AU2002238059A1 (https=)
DE (1) DE60211318T2 (https=)
TW (1) TWI246721B (https=)
WO (1) WO2002075791A2 (https=)

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US6511911B1 (en) * 2001-04-03 2003-01-28 Advanced Micro Devices, Inc. Metal gate stack with etch stop layer
US6815364B2 (en) * 2001-09-28 2004-11-09 Infineon Technologies North America Corp. Tungsten hard mask
US6589858B1 (en) * 2002-06-07 2003-07-08 Advanced Micro Devices, Inc. Method of making metal gate stack with etch endpoint tracer layer
US6734089B1 (en) * 2003-01-16 2004-05-11 Micron Technology Inc Techniques for improving wordline fabrication of a memory device
JP2005012179A (ja) * 2003-05-16 2005-01-13 Seiko Epson Corp 薄膜パターン形成方法、デバイスとその製造方法及び電気光学装置並びに電子機器、アクティブマトリクス基板の製造方法
US7115488B2 (en) * 2003-08-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7952118B2 (en) * 2003-11-12 2011-05-31 Samsung Electronics Co., Ltd. Semiconductor device having different metal gate structures
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
JP2007080995A (ja) * 2005-09-13 2007-03-29 Toshiba Corp 半導体装置
US7511984B2 (en) * 2006-08-30 2009-03-31 Micron Technology, Inc. Phase change memory
GB0625004D0 (en) * 2006-12-15 2007-01-24 Nxp Bv Semiconductor device and method of manufacture
KR100953050B1 (ko) * 2007-10-10 2010-04-14 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그의 제조 방법
US8524588B2 (en) 2008-08-18 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
US8211775B1 (en) 2011-03-09 2012-07-03 United Microelectronics Corp. Method of making transistor having metal gate
US8519487B2 (en) 2011-03-21 2013-08-27 United Microelectronics Corp. Semiconductor device
US9852870B2 (en) 2011-05-23 2017-12-26 Corporation For National Research Initiatives Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices
US20120313149A1 (en) * 2011-06-09 2012-12-13 Beijing Nmc Co., Ltd. Semiconductor structure and method for manufacturing the same
KR102060834B1 (ko) 2013-07-23 2019-12-30 삼성전자주식회사 반도체 장치 및 그 제조방법
US9455330B2 (en) * 2014-11-21 2016-09-27 International Business Machines Corporation Recessing RMG metal gate stack for forming self-aligned contact
EP3038140B1 (en) 2014-12-22 2017-11-22 IMEC vzw Method for tuning the effective work function of a metal
US9536974B2 (en) * 2015-04-17 2017-01-03 Globalfoundries Inc. FET device with tuned gate work function
DE202015004528U1 (de) * 2015-04-27 2016-07-28 Liebherr-Components Biberach Gmbh Arbeitsmaschine mit leistungsverzweigbarem Antrieb
US10658180B1 (en) 2018-11-01 2020-05-19 International Business Machines Corporation EUV pattern transfer with ion implantation and reduced impact of resist residue

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001716A (en) * 1998-05-22 1999-12-14 United Silicon Incorporated Fabricating method of a metal gate
KR20000041996A (ko) * 1998-12-24 2000-07-15 윤종용 금속막으로 구성된 게이트전극을 갖는 모스 트랜지스터

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* Cited by examiner, † Cited by third party
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US5403759A (en) * 1992-10-02 1995-04-04 Texas Instruments Incorporated Method of making thin film transistor and a silicide local interconnect
US5618760A (en) * 1994-04-12 1997-04-08 The Board Of Trustees Of The Leland Stanford, Jr. University Method of etching a pattern on a substrate using a scanning probe microscope
KR100248123B1 (ko) * 1997-03-04 2000-03-15 구본준 박막트랜지스터및그의제조방법
US6383879B1 (en) * 1999-12-03 2002-05-07 Agere Systems Guardian Corp. Semiconductor device having a metal gate with a work function compatible with a semiconductor device
US6444512B1 (en) * 2000-06-12 2002-09-03 Motorola, Inc. Dual metal gate transistors for CMOS process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001716A (en) * 1998-05-22 1999-12-14 United Silicon Incorporated Fabricating method of a metal gate
KR20000041996A (ko) * 1998-12-24 2000-07-15 윤종용 금속막으로 구성된 게이트전극을 갖는 모스 트랜지스터

Also Published As

Publication number Publication date
CN1246883C (zh) 2006-03-22
US6657268B2 (en) 2003-12-02
WO2002075791A2 (en) 2002-09-26
JP4076862B2 (ja) 2008-04-16
JP2004532516A (ja) 2004-10-21
EP1371088A2 (en) 2003-12-17
WO2002075791A3 (en) 2003-03-27
US20020132415A1 (en) 2002-09-19
US20030003645A1 (en) 2003-01-02
CN1503986A (zh) 2004-06-09
US6444513B1 (en) 2002-09-03
AU2002238059A1 (en) 2002-10-03
TWI246721B (en) 2006-01-01
DE60211318T2 (de) 2007-05-10
KR20030086609A (ko) 2003-11-10
EP1371088B1 (en) 2006-05-10
DE60211318D1 (de) 2006-06-14

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