JP2004532513A5 - - Google Patents

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Publication number
JP2004532513A5
JP2004532513A5 JP2002568402A JP2002568402A JP2004532513A5 JP 2004532513 A5 JP2004532513 A5 JP 2004532513A5 JP 2002568402 A JP2002568402 A JP 2002568402A JP 2002568402 A JP2002568402 A JP 2002568402A JP 2004532513 A5 JP2004532513 A5 JP 2004532513A5
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semiconductor structure
substrate
heat sink
dissipating layer
heat dissipating
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JP2002568402A
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Japanese (ja)
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JP2004532513A (ja
JP4311939B2 (ja
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Priority claimed from US09/792,409 external-priority patent/US6956250B2/en
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Publication of JP2004532513A5 publication Critical patent/JP2004532513A5/ja
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Publication of JP4311939B2 publication Critical patent/JP4311939B2/ja
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JP2002568402A 2001-02-23 2002-02-22 熱伝導性領域を含む窒化ガリウム材料 Expired - Fee Related JP4311939B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/792,409 US6956250B2 (en) 2001-02-23 2001-02-23 Gallium nitride materials including thermally conductive regions
PCT/US2002/005460 WO2002069373A2 (en) 2001-02-23 2002-02-22 Gallium nitride material based semiconductor devices including thermally conductive regions

Publications (3)

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JP2004532513A JP2004532513A (ja) 2004-10-21
JP2004532513A5 true JP2004532513A5 (https=) 2005-12-22
JP4311939B2 JP4311939B2 (ja) 2009-08-12

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JP2002568402A Expired - Fee Related JP4311939B2 (ja) 2001-02-23 2002-02-22 熱伝導性領域を含む窒化ガリウム材料

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US (2) US6956250B2 (https=)
EP (2) EP1386354B1 (https=)
JP (1) JP4311939B2 (https=)
AU (1) AU2002306569A1 (https=)
TW (1) TW529179B (https=)
WO (1) WO2002069373A2 (https=)

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