WO2002069373A2 - Gallium nitride material based semiconductor devices including thermally conductive regions - Google Patents

Gallium nitride material based semiconductor devices including thermally conductive regions Download PDF

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Publication number
WO2002069373A2
WO2002069373A2 PCT/US2002/005460 US0205460W WO02069373A2 WO 2002069373 A2 WO2002069373 A2 WO 2002069373A2 US 0205460 W US0205460 W US 0205460W WO 02069373 A2 WO02069373 A2 WO 02069373A2
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Prior art keywords
semiconductor structure
heat
gallium nitride
spreading layer
substrate
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French (fr)
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WO2002069373A9 (en
WO2002069373A3 (en
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Ricardo M. Borges
Kevin J. Linthicum
T. Warren Weeks
Thomas Gehrke
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Nitronex Corp
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Nitronex Corp
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Priority to AU2002306569A priority Critical patent/AU2002306569A1/en
Priority to EP19173082.9A priority patent/EP3561866A1/en
Priority to JP2002568402A priority patent/JP4311939B2/ja
Priority to EP02790164.4A priority patent/EP1386354B1/en
Publication of WO2002069373A9 publication Critical patent/WO2002069373A9/en
Publication of WO2002069373A2 publication Critical patent/WO2002069373A2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Definitions

  • the invention relates generally to semiconductor materials and, more particularly, to gallium nitride materials and methods of producing gallium nitride materials.
  • Gallium nitride materials include gallium nitride (GaN) and its alloys such as aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN). These materials are semiconductor compounds that have a relatively wide, direct bandgap which permits highly energetic electronic transitions to occur. Such electronic transitions can result in gallium nitride materials having a number of attractive properties including the ability to efficiently emit blue light, the ability to transmit signals at high frequency, and others. Accordingly, gallium nitride materials are being widely investigated in many semiconductor device applications such as transistors, field emitters, and optoelectronic devices.
  • Gallium nitride materials have been formed on a number of different substrates including silicon carbide (SiC), sapphire, and silicon. Device structures, such as doped regions, may then be formed within the gallium nitride material region.
  • SiC silicon carbide
  • Device structures such as doped regions, may then be formed within the gallium nitride material region.
  • heat is generated as a result of resistance to current flow within the device.
  • active device areas and/or highly resistive regions may generate large amounts of localized heat. The excessive heat may damage the device or cause performance problems. Therefore, it is desirable to distribute and/or dissipate heat generated within the device.
  • Certain substrates such as SiC are relatively good thermal conductors which can facilitate heat distribution and/or dissipation during device operation.
  • silicon only moderately conducts heat. Therefore, heat generally is not efficiently distributed or dissipated through silicon substrates.
  • the invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials.
  • the gallium nitride materials may be used to form semiconductor devices.
  • the thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device.
  • a variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.
  • the invention provides a semiconductor structure.
  • the semiconductor structure includes a substrate and a gallium nitride material region formed over the substrate.
  • the semiconductor structure further includes a heat spreading layer formed over the substrate.
  • the heat spreading layer has a greater thermal conductivity than that of the gallium nitride material region.
  • the semiconductor structure further includes a heat sink formed in the semiconductor structure.
  • the invention provides a semiconductor structure.
  • the semiconductor structure includes a substrate and a gallium nitride material region formed over the substrate.
  • a semiconductor device is formed, at least in part, in the gallium nitride material region.
  • the semiconductor structure includes a heat spreading layer formed over the substrate. The heat spreading layer has a greater thermal conductivity than that of each of the gallium nitride material region and the substrate.
  • the invention provides a semiconductor structure.
  • the semiconductor structure includes a substrate and a gallium nitride material region formed over the substrate.
  • a heat sink extends from a surface of the semiconductor structure.
  • the invention provides a semiconductor structure.
  • the semiconductor structure includes a silicon substrate and a gallium nitride material region formed over the substrate.
  • a semiconductor device is formed, at least in part, in the gallium nitride material region.
  • the semiconductor structure further includes a thermal region capable of distributing and dissipating heat generated by the device.
  • the invention provides a method of forming a semiconductor structure.
  • the method includes forming a heat spreading layer over a substrate, forming a gallium nitride material region over the substrate, and forming a heat sink in the semiconductor structure.
  • the heat spreading layer has a greater thermal conductivity than that of the gallium nitride material region.
  • the invention provides a method of forming a semiconductor structure.
  • the method includes forming a heat spreading layer over a substrate, and forming a gallium nitride material region over the substrate.
  • the heat spreading layer has a greater thermal conductivity than that of both the gallium nitride material region and the substrate.
  • the invention provides a method of forming a semiconductor structure.
  • the method includes forming a gallium nitride material region over a substrate, and forming a heat sink extending from a surface of the semiconductor structure.
  • the invention provides a mechanism for effectively distributing and/or dissipating heat in gallium nitride material devices.
  • the devices thus, can operate under conditions which generate amounts of heat that would otherwise result in damage and/or performance problems.
  • the invention also enables heat distribution and dissipation in gallium nitride devices formed on substrates, such as silicon, which are poor or moderate thermal conductors. Despite its poor thermal conductivity, it may be advantageous to form devices on silicon substrates due to other advantages associated with silicon substrates including availability, cost, size, and ease of processing.
  • the invention provides a mechanism for effectively adding heat to gallium nitride material devices, for example, to maintain a substantially constant temperature of the device which may be desired in certain applications.
  • Fig. 1 illustrates a gallium nitride material device including a heat spreading layer connected to a heat sink according to one embodiment of the present invention.
  • Fig. 2 illustrates a gallium nitride material device including a heat sink that extends through the heat spreading layer according to one embodiment of the present invention.
  • Fig. 3 illustrates a gallium nitride material device including a heat sink formed from conductive material deposited within a via that extends from a backside of a device according to one embodiment of the present invention.
  • Fig. 4 illustrates a gallium nitride material device including a heat sink with an interface layer according to one embodiment of the present invention.
  • Fig. 5 is a side view of a gallium nitride material device including a heat sink channel that extends laterally across the device according to one embodiment of the present invention.
  • Fig. 6 illustrates a gallium nitride material device that includes a heat spreading layer that is not in direct contact with a heat sink according to one embodiment of the present invention.
  • Fig. 7 illustrates a gallium nitride material device that includes a heat spreading layer without a heat sink according to one embodiment of the present invention.
  • Fig. 8 illustrates a gallium nitride material device that includes a heat sink without a heat spreading layer according to one embodiment of the present invention.
  • Fig. 9 illustrates a gallium nitride material device that includes a heat sink that extends from a topside of the device according to one embodiment of the present invention.
  • Fig. 10 illustrates a gallium nitride material device that includes a heat sink that directly contacts a heat generation region according to one embodiment of the present invention.
  • Fig. 11 illustrates a gallium nitride material device that includes a heat spreading layer at a topside of the device according to one embodiment of the present invention.
  • the invention provides gallium nitride material devices including thermally conductive regions and methods to form such devices.
  • Device 10 includes a gallium nitride material device region 12 formed over a substrate 14. As described further below, device structures are typically formed, at least in part, within gallium nitride material device region 12. A heat spreading layer 16 is formed between gallium nitride material region 12 and substrate 14. Heat spreading layer 16 distributes heat generated within device region 12 which otherwise may damage the device or effect performance.
  • device 10 also includes a heat sink 18 that extends from a backside 20 of the device. As shown, heat sink 18 is connected to spreading layer 16 so that heat conducted from the spreading layer may be dissipated, for example to the environment, by the heat sink.
  • a layer when a layer is referred to as being “on” or “over” another layer or substrate, it can be directly on the layer or substrate, or an intervening layer also may be present. A layer that is “directly on” another layer or substrate means that no intervening layer is present. It should also be understood that when a layer is referred to as being “on” or “over” another layer or substrate, it may cover the entire layer or substrate, or a portion of the layer or substrate.
  • the term “backside” refers to the bottom surface of the device and the term “topside” refers to the upper surface of the device. Thus, the topside is opposite the backside of the device.
  • Heat spreading layer 16 conducts heat away from device region 12.
  • spreading layer 16 conducts heat away from areas within device region 12 which generate large amounts of heat such as active device areas and/or highly resistive areas (i.e., hot spots).
  • spreading layer 16 is preferably designed to conduct heat sufficiently to prevent excessive localized heating which otherwise would result in damage and/or effect performance of device 10. Such damage can include structural and/or chemical damage which can degrade electronic properties of the device such as the breakdown voltage and carrier mobility. Heat is distributed throughout the volume of spreading layer 16. Because the surface area of spreading layer 16 is typically much greater than its thickness, heat is primarily distributed over the surface area of the spreading layer. Thus, the spreading layer generally functions to distribute heat laterally over device 10.
  • Heat spreading layer 16 may be formed of any suitable material that has sufficient thermal conductive properties. Generally, heat spreading layer 16 has a higher thermal conductivity than that of gallium nitride material device region 12. In some preferred embodiments, such as when a silicon substrate 14 is utilized, heat spreading layer 16 also has a higher thermal conductivity than that of substrate 14. Heat spreading layer 16, for example, has a thermal conductivity of greater than or equal to about 1.7 /m 2 -K. In other cases, when a greater conductivity is required, spreading layer 16 may have a thermal conductivity of greater than or equal to about 2.5 W/m 2 -K. In still other cases, when greater conductivities are desired, spreading layer 16 may have a thermal conductivity of greater than or equal to about 4.5 /m 2 -K.
  • suitable materials for heat spreading layer 16 include, but are not limited to, silicon carbide (SiC); alloys of silicon carbide and aluminum nitride (AlN x SiC ( i_ X) ); and Group III nitrides including aluminum nitride (A1N), boron nitride (BN), and aluminum gallium nitride alloys having greater than 0.5 mole fraction of aluminum (e.g., Al x Ga (1 . X) N, wherein x > 0.5). It should be understood that the heat spreading layer may also be made of other materials having sufficient thermal conductive properties.
  • Aluminum nitride (A1N) heat spreading layers may be particularly preferred in some embodiments, for example, because of their ability to have other functions within device 10 such as buffer layers.
  • heat spreading layer 16 has a constant composition throughout its thickness (t).
  • heat spreading layer 16 has a composition that varies across at least a portion of its thickness.
  • heat spreading layer 16 may include more than one layer having separate compositions.
  • heat spreading layer 16 may be a portion of a compositionally-graded transition layer formed between substrate 14 and gallium nitride material region 12. Compositionally- graded transition layers have been described in co-pending, commonly-owned, U.S. Patent Application Serial No.
  • compositionally-graded transition layers also are effective in reducing crack formation in gallium nitride material device region 12 by lowering thermal stresses that result from differences in thermal expansion rates between the gallium nitride material and substrate 14 (e.g., silicon).
  • spreading layer 16 is a portion of a compositionally-graded transition layer composed of an alloy of aluminum gallium nitride (e.g., Al x Ga( 1 . X )N or Al x In y Ga(i- x - y) N) having greater than 0.5 mole fraction of aluminum (Al x Ga(i. X )N, x > 0.5).
  • heat spreading layer 16 has a thickness (t) of between about 5 nm and about 5 microns, though other dimensions also are possible.
  • t thickness of heat spreading layer 16
  • relative thick (e.g., between about 100 nm and about 5 micron) heat spreading layers may be preferred to provide larger volumes which increase the amount of heat that may be distributed in the layer.
  • relatively thin (e.g., between about 5 nm and about 50 nm) heat spreading layers may be preferred to reduce lattice related stresses which may increase mechanical reliability during use.
  • heat spreading layer 16 extends over the entire surface area of substrate 14. In many cases, for example to maximize heat distribution over device 10, it is preferable to have heat spreading layer 16 extend over the entire surface area of substrate 14. In other cases, heat spreading layer 16 may extend over only a portion of the entire surface area of substrate 14. As shown in Fig. 2, one or more electrical contacts 19 may extend through heat spreading layer 16 to provide electrical conduction therethrough. In other embodiments (not shown) heat spreading layer 16 may only be formed proximate areas which generate excessive amounts of heat (e.g., device regions, or highly resistive regions).
  • heat spreading layer 16 is connected to heat sink 18 to permit conduction from the spreading layer to the heat sink.
  • heat sink 18 is positioned at backside 20 to increase dissipation of heat, for example, to the environment. In other cases, heat sink 18 may be positioned at a topside surface of the device (as shown in Fig. 9). In some cases, heat sink 18 is most effective when located proximate regions which generate large amounts of heat. It should also be understood that more than one heat sink may be utilized in the same device 10.
  • Heat sink 18 may dissipate the heat according to different mechanisms which depend upon the particular design of the heat sink. Figs. 3 to 5 show different embodiments of heat sink 18.
  • a device 21 has a heat sink 18a including a conductive material 22 deposited within a via 24 that extends from backside 20.
  • Conductive material 22 conducts heat away from device 21 to the environment and/or to a supporting structure (e.g., a platen which may be cooled by water or air) which contacts heat sink 18 during use of device 21.
  • heat sink 18a removes heat from device 21.
  • the exact dimensions and shape of via 24 depend upon the application. A typical cross-sectional area diameter of between about 300 and 500 microns at backside 20. It may be preferable for via 24 to be tapered inward away from backside 20, as shown, thus giving the via a cone shape. The inward taper can facilitate deposition of conductive material 22 within via 24.
  • the via may taper, for example, to a diameter between about 25 microns and 75 microns.
  • Conductive material 22 generally may be any material having sufficient conductivity to prevent excessive heating of device 21. When the device includes both heat sink 18 and spreading layer 16, as shown in Fig. 1, it may be desirable for conductive material 22 to have a greater thermal conductivity than the material that forms the spreading layer to most efficiently dissipate heat from the device.
  • Conductive material 22, for example has a thermal conductivity of greater than about 3.0 W/m 2 -K. In other embodiments, conductive material 22 has a significantly greater thermal conductivity (e.g., greater than about 30 W/m K) which may enable relatively large amounts of heat to be dissipated.
  • Suitable materials for conductive material 22 include, but are not limited to, copper, gold, polycrystalline diamond, aluminum nitride, silicon carbide, and aluminum gallium nitride alloys having greater than 0.5 mole fraction of aluminum. In some cases, processing considerations may determine, at least in part, the composition of conductive material 22. Metals that can be sputtered, such as copper and gold, may be preferred in certain cases to facilitate deposition into via 24. In the embodiment of Fig. 4, a device 23 has a heat sink 18b that includes an interface layer 26 deposited on walls of via 24 prior to the deposition of conductive material 22.
  • Interface layer 26 may have a number of functions including: preventing chemical interaction between conductive material 22 and substrate 14; preventing diffusion between the conductive material and the substrate; and, improving the adherence between the conductive material and the substrate.
  • Interface layer 26 is typically also made of a conductive material so as maintain conduction to heat sink 18b. Examples of suitable materials for interface layer 26 are titanium and titanium/tungsten alloys. As shown, interface layer 26 may also be formed to cover backside 20 of the device, for example, for passivation functions. In the embodiment of Fig. 5, a device 25 has a heat sink 18c formed by a channel
  • Channel 28 that extends laterally across device 25 on backside 20.
  • Channel 28 increases the surface area of backside 20 exposed to the environment which can increase the amount of heat dissipated by heat sink 18.
  • the dimensions of channel 28 depend at least in part upon the cooling requirements and more than one channel may be utilized on the same device.
  • walls of channel 28 may be coated, for example, with a conductive material.
  • a cooling medium may be forced through channel 28. Suitable cooling mediums include gases (e.g., air) or liquids (e.g., liquid He, liquid N 2 ).
  • substrate 14 is a silicon substrate.
  • Silicon substrates are relatively inexpensive, may be processed using known techniques, and are readily available in a variety of sizes (including large diameters such as 6 inches (150 mm) and 8 inches (200 mm)).
  • a silicon substrate refers to any substrate that includes a silicon layer at its top surface.
  • suitable silicon substrates include substrates that are composed of bulk silicon (e.g., silicon wafers), silicon-on-insulator (SOI) substrates, silicon-on-sapphire substrates (SOS), and separation by implanted oxygen (SIMOX) substrates, amongst others.
  • High-quality single-crystal silicon substrates are used in many embodiments. Silicon substrates having different crystallographic orientations may be used. In some cases, silicon (111) substrates are preferred. In other cases, silicon (100) substrates are preferred.
  • substrates other than silicon substrates may be used such as sapphire and silicon carbide substrates.
  • the thermal regions of the present invention may be particularly useful when utilizing silicon substrates because silicon has a relatively low thermal conductivity.
  • silicon substrates generally do not effectively spread or dissipate heat generated in device 10.
  • other types of substrates that have better thermal conductivities than silicon e.g., silicon carbide
  • Substrate 14 may have any dimensions and its particular dimensions are dictated by the application. Suitable diameters include, but are not limited to, 2 inches (50 mm),
  • silicon substrate 14 is relatively thick, for example, greater than 250 microns. Thicker substrates are generally able to resist bending which can occur, in some cases, in thinner substrates. In some embodiments, silicon substrate 14 preferably is thin (e.g., less than 100 microns), for example, to facilitate the formation of via 24 therethrough.
  • Gallium nitride material device region 12 comprises at least one gallium nitride material layer. In some cases, gallium nitride material device region 12 includes only one gallium nitride material layer. In other cases, gallium nitride material device region 12 includes more than one gallium nitride material layer. When more than one gallium nitride material layer is provided in device region 12, the respective layers may have different compositions and or contain different dopants. The different layers can form different regions of the semiconductor structure. Gallium nitride material region also may include one or more layers having compositions that are non-gallium nitride materials.
  • gallium nitride material refers to gallium nitride (GaN) and any of its alloys, such as aluminum gallium nitride (Al x Ga ( i_ X) N), indium gallium nitride (rn y Ga ( i. y) N), aluminum indium gallium nitride (Al x hiyGa ( i. x .y ) N), gallium arsenide phosporide nitride (GaAs a Pb N(i. a -b)) > aluminum indium gallium arsenide phosporide nitride N(i. a -b)), amongst others.
  • Gallium nitride materials may be doped n-type or p-type, or may be intrinsic. Suitable gallium nitride materials have been described in U.S. Patent Application Serial No. 09/736,972, incorporated herein.
  • Gallium nitride material region 12 is generally of high enough quality so as to permit the formation of devices therein.
  • gallium nitride material region 12 has a low crack level and a low defect level.
  • device 10 may include one or more buffer or transition layers (not shown), including the compositionally-graded transition layer described above, which may reduce crack and/or defect formation.
  • gallium nitride material region 12 has less than 10 defects/cm .
  • Gallium nitride materials having low crack levels have been described in U.S. Patent Application Serial No. 09/736,972, incorporated herein.
  • gallium nitride material region 12 has a crack level of less than 0.005 ⁇ m/ ⁇ m 2 .
  • gallium nitride material has a very low crack level of less man 0.001 ⁇ m ⁇ m 2 . In certain cases, it may be preferable for gallium nitride material region 12 to be substantially crack-free as defined by a crack level of less than 0.0001 ⁇ m/ ⁇ m 2 .
  • gallium nitride material region 12 includes a layer or layers which have a monocrystalline structure. In some preferred cases, gallium nitride material region 12 includes one or more layers having a Wurtzite (hexagonal) structure. The thickness of gallium nitride material device region 12 and the number of different layers are dictated at least in part by the requirements of the specific application. At a minimum, the thickness of gallium nitride material device region 12 is sufficient to permit formation of the desired device. Gallium nitride material device region 12 generally has a thickness of greater than 0.1 micron, though not always. In other cases, gallium nitride material region 12 has a thickness of greater than 0.5 micron, greater than 0.75 micron, greater than 1.0 microns, greater than 2.0 microns, or greater than 5.0 microns.
  • Fig. 1 illustrates an embodiment in which heat spreading layer 16 is connected to heat sink 18. It should be understood that other embodiments may have other structures.
  • device 30 includes heat spreading layer 16 that is not in direct contact with heat sink 18. The embodiment of Fig. 6 may provide sufficient heat distribution and dissipation. In some cases, it may be advantageous for heat sink 18 not to extend to spreading layer 16, for example, for processing reasons.
  • Fig. 7 shows a device 32 that includes a heat spreading layer 16 without a heat sink.
  • Device 32 may be appropriate when heat spreading layer 16 adequately distributes heat, without the need for heat sink 18 to further dissipate heat to the environment or a supporting structure.
  • Fig. 8 shows a device 34 that includes a heat sink 18 without a heat spreading layer.
  • Device 34 may be used when heat dissipation within heat sink 18 is required without the need to distribute heat using spreading layer 16.
  • Fig. 9 illustrates a device 35 that includes a heat sink 18 that extends from a topside 37 of the device. The embodiment of Fig. 9 may be preferred when it is advantageous for heat sink 18 to extend from topside 37 rather than backside 20, for example, for processing reasons.
  • Fig. 10 illustrates a device 38 that includes a heat sink 18 that extends from backside 20 to directly contact a heat generation region 40, for example, within gallium nitride material device region 12.
  • Heat generation region 40 for example, can be an active device area or a highly resistive region.
  • the embodiment of Fig. 10 may facilitate removal of heat from a highly localized region.
  • Fig. 11 illustrates a gallium nitride material device 42 that includes a heat spreading layer 16 at a topside 37 of the device. It should also be understood that the heat spreading layer may also be positioned elsewhere in the device including within gallium nitride material device region 12.
  • the devices of the invention may also include any number of other structures known in the art of semiconductor processing such as electrically insulating regions, doped regions, contact pads, and the like.
  • contact pads may be formed on the device topside, backside, or both.
  • Contact pads are formed of an electrically conductive material and can provide connection to terminals of an appropriate power source through wire bonding, air bridging and the like.
  • heat sink 18 may function as a backside contact pad.
  • the devices described herein (e.g., device 10) may be any suitable semiconductor device known in the art including electronic and optical devices.
  • Exemplary devices include power generating devices (e.g., power transistor) and optical devices (e.g., high power/ultra-high brightness LEDs and laser diodes). It should be understood that other devices are also possible.
  • the devices may be formed entirely within gallium nitride material region 12 (i.e., the only active device regions are within gallium nitride material region 12). In other cases, the device is formed only in part within gallium nitride material region 12 and is also formed in other regions such as substrate 14. As described above, the devices described herein can utilize thermal regions (i.e., spreading layer 16 and heat sink 18) to distribute and/or dissipate heat in order to prevent excessive heat generation within device. In other embodiments, the devices (e.g., device 10) may utilize thermal regions (i.e., spreading layer 16 and heat sink 18) to heat and/or cool the device using an external source.
  • thermal regions i.e., spreading layer 16 and heat sink 18
  • device 10 may be heated and/or cooled to maintain a substantially constant temperature within the device.
  • external sources may be connected to a feedback system which monitors the temperature of the device and controls the amount of heat and/or cooling provided by the source.
  • Examples of devices which may utilize heating and/or cooling from an external source include pyroelectric devices and piezoelectric devices.
  • the semiconductor devices of the present invention may be formed using known processing techniques.
  • Heat spreading layer 16 and gallium nitride material device region 12 may be deposited on substrate 14, for example, using metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), amongst other techniques.
  • MOCVD metalorganic chemical vapor deposition
  • MBE molecular beam epitaxy
  • HVPE hydride vapor phase epitaxy
  • an MOCVD process may be preferred.
  • a suitable MOCND process to form gallium nitride material device region 12 on a silicon substrate 14 has been described in U.S. Patent Application Serial No. 09/736,972, incorporated herein.
  • gallium nitride material device region 12 has different layers, in some cases it is preferable to use a single deposition step (e.g., an MOCVD step) to form the entire device region 12.
  • a single deposition step e.g., an MOCVD step
  • the processing parameters are suitably changed at the appropriate time to form the different layers.
  • a single growth step may be used to form heat spreading layer 15 and gallium nitride material device region 12.
  • device region 12 it may be preferable to grow device region 12 using a lateral epitaxial overgrowth (LEO) technique that involves growing an underlying gallium nitride layer through mask openings and then laterally over the mask to form the gallium nitride material device region, for example, as described in U.S. Patent No. 6,051,849, which is incorporated herein by reference.
  • LEO lateral epitaxial overgrowth
  • etching techniques may be used to form via 24 or channel 28, when present. Suitable techniques include wet chemical etching and plasma etching (i.e., P E, ICP etching, amongst others). A pre-determined etching time may be used to form via 24 with the desired dimensions. In other cases, an etch stop layer which has a composition that slows or stops etching may be provided within device 10 so that precise control over the etching time is not required to form via 24 with desired dimensions. In some cases, heat spreading layer 16 may function as an etch-stop layer. For example, aluminum nitride heat spreading layers may be effective at slowing or stopping etching techniques used to make via 24 in substrate 14.
  • Conductive material 22 may be deposited using known techniques suitable for depositing conductive materials such as metals. Such techniques include sputtering, electron beam deposition, evaporation, amongst others. Those skilled in the art would readily appreciate that all parameters listed herein are meant to be exemplary and that the actual parameters would depend upon the specific application for which the semiconductor materials and methods of the invention are used. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto the invention may be practiced otherwise than as specifically described. What is claimed is:

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PCT/US2002/005460 2001-02-23 2002-02-22 Gallium nitride material based semiconductor devices including thermally conductive regions Ceased WO2002069373A2 (en)

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Application Number Priority Date Filing Date Title
AU2002306569A AU2002306569A1 (en) 2001-02-23 2002-02-22 Gallium nitride material based semiconductor devices including thermally conductive regions
EP19173082.9A EP3561866A1 (en) 2001-02-23 2002-02-22 Gallium nitride material based semiconductor devices including thermally conductive regions
JP2002568402A JP4311939B2 (ja) 2001-02-23 2002-02-22 熱伝導性領域を含む窒化ガリウム材料
EP02790164.4A EP1386354B1 (en) 2001-02-23 2002-02-22 Gallium nitride material based semiconductor devices including thermally conductive regions

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US09/792,409 US6956250B2 (en) 2001-02-23 2001-02-23 Gallium nitride materials including thermally conductive regions

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222087B2 (en) 2006-12-19 2012-07-17 HGST Netherlands, B.V. Seed layer for a heat spreader in a magnetic recording head
WO2014120807A1 (en) * 2013-01-29 2014-08-07 The Trustees Of Boston College High thermal conductivity materials for thermal management applications

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1307903A1 (en) 2000-08-04 2003-05-07 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
TW565957B (en) * 2002-12-13 2003-12-11 Ind Tech Res Inst Light-emitting diode and the manufacturing method thereof
WO2005060007A1 (en) * 2003-08-05 2005-06-30 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
CN101335320B (zh) 2003-09-19 2012-06-06 霆激科技股份有限公司 用于制作发光器件的方法
WO2005043604A2 (en) * 2003-10-23 2005-05-12 North Carolina State University Growth and integration of epitaxial gallium nitride films with silicon-based devices
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
ATE533187T1 (de) * 2004-03-15 2011-11-15 Tinggi Technologies Private Ltd Fabrikation von halbleiterbauelementen
JP2007533133A (ja) 2004-04-07 2007-11-15 ティンギ テクノロジーズ プライベート リミテッド 半導体発光ダイオード上での反射層の作製
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
KR100612266B1 (ko) * 2004-09-09 2006-08-14 삼성전자주식회사 페이지 폭 프린터 헤드 조립체, 잉크 카트리지, 잉크젯 프린터 및 페이지 폭 프린터 헤드의 제어방법
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
JP2008519441A (ja) * 2004-10-28 2008-06-05 ニトロネックス コーポレイション 窒化ガリウム材料を用いるモノリシックマイクロ波集積回路
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
JP4452167B2 (ja) * 2004-12-06 2010-04-21 株式会社豊田中央研究所 Ｉｉｉ−ｖ族化合物の半導体層を備えている構造物の製造方法
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
SG131803A1 (en) * 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
US7723759B2 (en) * 2005-10-24 2010-05-25 Intel Corporation Stacked wafer or die packaging with enhanced thermal and device performance
US9608102B2 (en) * 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
US20070138628A1 (en) * 2005-12-15 2007-06-21 Lam Ken M Apparatus and method for increasing the quantity of discrete electronic components in an integrated circuit package
US8258599B2 (en) * 2005-12-15 2012-09-04 Atmel Corporation Electronics package with an integrated circuit device having post wafer fabrication integrated passive components
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
JP5386177B2 (ja) * 2006-01-10 2014-01-15 クリー インコーポレイテッド 炭化珪素ディンプル基板
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
EP2016628A2 (en) * 2006-04-20 2009-01-21 Nxp B.V. Thermal isolation of electronic devices in submount used for leds lighting applications
JP2007318044A (ja) * 2006-05-29 2007-12-06 Mitsubishi Electric Corp 半導体装置とその製造方法
US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials
US7932590B2 (en) * 2006-07-13 2011-04-26 Atmel Corporation Stacked-die electronics package with planar and three-dimensional inductor elements
US20080035143A1 (en) * 2006-08-14 2008-02-14 Sievers Robert E Human-powered dry powder inhaler and dry powder inhaler compositions
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) * 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US8110838B2 (en) * 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
TWI348230B (en) * 2007-08-08 2011-09-01 Huga Optotech Inc Semiconductor light-emitting device with high heat-dissipation efficiency and method of fabricating the same
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
JP5396784B2 (ja) * 2008-09-09 2014-01-22 日本電気株式会社 半導体装置及びその製造方法
JP5468761B2 (ja) * 2008-09-25 2014-04-09 古河電気工業株式会社 半導体装置、ウエハ構造体および半導体装置の製造方法
DE102008063416B4 (de) * 2008-12-31 2014-12-31 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Wärmeableitung in temperaturkritischen Bauteilbereichen von Halbleiterbauelementen durch Wärmeleitungen, die mit der Substratrückseite verbunden sind
SG185547A1 (en) 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure
US8575657B2 (en) * 2012-03-20 2013-11-05 Northrop Grumman Systems Corporation Direct growth of diamond in backside vias for GaN HEMT devices
EP2696365B1 (en) 2012-08-09 2021-06-23 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using a semiconductor buffer structure
TWI495154B (zh) * 2012-12-06 2015-08-01 新世紀光電股份有限公司 半導體結構
WO2014152598A1 (en) * 2013-03-15 2014-09-25 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates
US9190270B2 (en) 2013-06-04 2015-11-17 Samsung Electronics Co., Ltd. Low-defect semiconductor device and method of manufacturing the same
DE112013006978B4 (de) * 2013-06-18 2021-12-16 Intel Corporation Integrierte thermoelektrische Kühlung
US9613886B2 (en) 2013-08-29 2017-04-04 Industrial Technology Research Institute Optical coupling module
KR102098250B1 (ko) 2013-10-21 2020-04-08 삼성전자 주식회사 반도체 버퍼 구조체, 이를 포함하는 반도체 소자 및 반도체 버퍼 구조체를 이용한 반도체 소자 제조방법
US9362198B2 (en) 2014-04-10 2016-06-07 Freescale Semiconductor, Inc. Semiconductor devices with a thermally conductive layer and methods of their fabrication
US9112077B1 (en) 2014-04-28 2015-08-18 Industrial Technology Research Institute Semiconductor structure
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
JP6370501B2 (ja) * 2015-12-28 2018-08-08 三菱電機株式会社 半導体装置及び半導体装置の製造方法
GB2561730B (en) * 2016-02-04 2020-11-04 Mitsubishi Electric Corp Semiconductor substrate
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
TWI703726B (zh) 2016-09-19 2020-09-01 新世紀光電股份有限公司 含氮半導體元件
JP6942253B2 (ja) 2018-06-28 2021-09-29 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
US12519030B2 (en) 2019-06-18 2026-01-06 Mitsubishi Electric Corporation Semiconductor device including diamond substrate and semiconductor device manufacturing method
US11125727B2 (en) * 2019-06-28 2021-09-21 Npl Management Limited Ultrasound sensor and detection apparatus
CN112786449A (zh) * 2019-11-07 2021-05-11 上海华为技术有限公司 Hemt器件制造方法、hemt器件及射频功率放大器
US20210320045A1 (en) * 2020-04-09 2021-10-14 Raytheon Company Thermal management structures for nitride-based heat generating semiconductor devices
US11569170B2 (en) 2020-10-07 2023-01-31 Globalfoundries U.S. Inc. Substrate with a buried conductor under an active region for enhanced thermal conductivity and RF shielding
US11842940B2 (en) 2021-01-25 2023-12-12 Globalfoundries U.S. Inc. Semiconductor structure having a thermal shunt below a metallization layer and integration schemes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910583A (en) 1987-06-04 1990-03-20 Licentia Patent-Verwaltungs Gmbh Semiconductor body with heat sink
US5122845A (en) 1989-03-01 1992-06-16 Toyoda Gosei Co., Ltd. Substrate for growing gallium nitride compound-semiconductor device and light emitting diode

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2516311B1 (fr) 1981-11-06 1985-10-11 Thomson Csf Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle
JPS59163865A (ja) 1983-03-08 1984-09-14 Toshiba Corp ゲ−トタ−ンオフサイリスタ
US4842699A (en) 1988-05-10 1989-06-27 Avantek, Inc. Method of selective via-hole and heat sink plating using a metal mask
US5449930A (en) * 1990-08-01 1995-09-12 Zhou; Guo-Gang High power, compound semiconductor device and fabrication process
JP2505065B2 (ja) 1990-10-04 1996-06-05 三菱電機株式会社 半導体装置およびその製造方法
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JPH06310547A (ja) * 1993-02-25 1994-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
DE69622277T2 (de) 1995-09-18 2003-03-27 Hitachi, Ltd. Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung
JP3396356B2 (ja) 1995-12-11 2003-04-14 三菱電機株式会社 半導体装置，及びその製造方法
US5874747A (en) 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5905275A (en) * 1996-06-17 1999-05-18 Kabushiki Kaisha Toshiba Gallium nitride compound semiconductor light-emitting device
JPH1051065A (ja) * 1996-08-02 1998-02-20 Matsushita Electron Corp 半導体レーザ装置
US5955772A (en) 1996-12-17 1999-09-21 The Regents Of The University Of California Heterostructure thermionic coolers
JP3325477B2 (ja) 1996-12-25 2002-09-17 京セラ株式会社 半導体素子収納用パッケージ
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
EP0871228A3 (en) * 1997-04-09 2001-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, semiconductor device and method of manufacturing the same
CN1159750C (zh) 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6500257B1 (en) 1998-04-17 2002-12-31 Agilent Technologies, Inc. Epitaxial material grown laterally within a trench and method for producing same
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6426512B1 (en) 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP3591710B2 (ja) * 1999-12-08 2004-11-24 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
JP2001160627A (ja) * 1999-11-30 2001-06-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US20020069816A1 (en) * 1999-12-13 2002-06-13 Thomas Gehrke Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6355497B1 (en) * 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP4801306B2 (ja) 2000-02-09 2011-10-26 ノースカロライナ ステート ユニバーシティー 窒化ガリウム半導体構造体の製造方法および窒化ガリウム半導体構造体
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
JP3751791B2 (ja) * 2000-03-28 2006-03-01 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6707074B2 (en) * 2000-07-04 2004-03-16 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and apparatus for driving the same
EP1307903A1 (en) 2000-08-04 2003-05-07 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6489636B1 (en) * 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910583A (en) 1987-06-04 1990-03-20 Licentia Patent-Verwaltungs Gmbh Semiconductor body with heat sink
US5122845A (en) 1989-03-01 1992-06-16 Toyoda Gosei Co., Ltd. Substrate for growing gallium nitride compound-semiconductor device and light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222087B2 (en) 2006-12-19 2012-07-17 HGST Netherlands, B.V. Seed layer for a heat spreader in a magnetic recording head
WO2014120807A1 (en) * 2013-01-29 2014-08-07 The Trustees Of Boston College High thermal conductivity materials for thermal management applications

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