JP2004526440A5 - - Google Patents

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Publication number
JP2004526440A5
JP2004526440A5 JP2002564953A JP2002564953A JP2004526440A5 JP 2004526440 A5 JP2004526440 A5 JP 2004526440A5 JP 2002564953 A JP2002564953 A JP 2002564953A JP 2002564953 A JP2002564953 A JP 2002564953A JP 2004526440 A5 JP2004526440 A5 JP 2004526440A5
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JP
Japan
Prior art keywords
protein
promoter
fungal host
secretable
under
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JP2002564953A
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Japanese (ja)
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JP2004526440A (ja
JP4302985B2 (ja
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Priority claimed from FI20010272A external-priority patent/FI120310B/fi
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Publication of JP2004526440A publication Critical patent/JP2004526440A/ja
Publication of JP2004526440A5 publication Critical patent/JP2004526440A5/ja
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Publication of JP4302985B2 publication Critical patent/JP4302985B2/ja
Anticipated expiration legal-status Critical
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JP2002564953A 2001-02-13 2002-02-13 真菌における分泌タンパク質の産生のための改良法 Expired - Fee Related JP4302985B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20010272A FI120310B (fi) 2001-02-13 2001-02-13 Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä
PCT/FI2002/000116 WO2002064624A2 (en) 2001-02-13 2002-02-13 Improved method for production of secreted proteins in fungi

Publications (3)

Publication Number Publication Date
JP2004526440A JP2004526440A (ja) 2004-09-02
JP2004526440A5 true JP2004526440A5 (enExample) 2005-12-22
JP4302985B2 JP4302985B2 (ja) 2009-07-29

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Family Applications (1)

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JP2002564953A Expired - Fee Related JP4302985B2 (ja) 2001-02-13 2002-02-13 真菌における分泌タンパク質の産生のための改良法

Country Status (7)

Country Link
US (1) US20040115790A1 (enExample)
EP (1) EP1360196A2 (enExample)
JP (1) JP4302985B2 (enExample)
AU (1) AU2002233373B2 (enExample)
CA (1) CA2438356A1 (enExample)
FI (1) FI120310B (enExample)
WO (1) WO2002064624A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5366286B2 (ja) * 2002-09-10 2013-12-11 ジェネンコー・インターナショナル・インク 高濃度糖類混合物を用いた遺伝子発現の誘発
CA2575319C (en) * 2004-07-27 2014-10-14 Unilever Plc Aerated food products containing hydrophobin
JP5631533B2 (ja) * 2004-12-23 2014-11-26 ノボザイムス バイオファーマ デーコー アクティーゼルスカブ 遺伝子発現技術
MX2007012954A (es) * 2005-04-20 2008-01-11 Wyeth Corp Sistemas de expresion en mamiferos.
BRPI0715360B8 (pt) 2006-07-27 2022-01-04 Wyeth Corp método para a produção de uma proteína recombinante; método para a produção de uma proteína 2086 meningocócica recombinante (p2086); e composição
WO2008079228A1 (en) * 2006-12-20 2008-07-03 Danisco Us, Inc., Genencor Division Assays for improved fungal strains
WO2009158627A2 (en) * 2008-06-27 2009-12-30 Edeniq, Inc. Cellulosic protein expression in yeast
WO2010111208A1 (en) * 2009-03-23 2010-09-30 University Of Miami Mitochondrial inhibitors and uses thereof
AT510299B1 (de) * 2010-12-22 2012-03-15 Univ Wien Tech Verfahren und mittel zur herstellung von n-acetylneuraminsäure (neunac)
WO2019003180A1 (en) * 2017-06-29 2019-01-03 Savitribai Phule Pune University IMPROVED PRODUCTION AND USES OF A SELF-ASSEMBLY PROTEIN SECRETED BY AN NATIVE YARROWIA LIPOLYTICA STRAIN
CN108192919B (zh) * 2018-02-01 2020-08-18 中国农业大学 一种培育抗旱转基因棉花的方法
BR112021010338A2 (pt) * 2018-11-28 2021-11-16 Novozymes As Células hospedeiras fúngicas filamentosas modificadas
CN113528492B (zh) * 2021-09-07 2022-07-22 山东大学 一种将木质纤维素水解液回用于发酵生产纤维素酶液的方法

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3564356A (en) * 1968-10-24 1971-02-16 Tektronix Inc High voltage integrated circuit transistor
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
JPS6016420A (ja) * 1983-07-08 1985-01-28 Mitsubishi Electric Corp 選択的エピタキシヤル成長方法
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
FR2566179B1 (fr) * 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement
GB8610600D0 (en) 1986-04-30 1986-06-04 Novo Industri As Transformation of trichoderma
JPH0693512B2 (ja) * 1986-06-17 1994-11-16 日産自動車株式会社 縦形mosfet
US5607511A (en) * 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4746630A (en) * 1986-09-17 1988-05-24 Hewlett-Packard Company Method for producing recessed field oxide with improved sidewall characteristics
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
JPH0216763A (ja) * 1988-07-05 1990-01-19 Toshiba Corp 半導体装置の製造方法
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
US4992390A (en) * 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
DE69034136T2 (de) * 1989-08-31 2005-01-20 Denso Corp., Kariya Bipolarer transistor mit isolierter steuerelektrode
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
US5298761A (en) * 1991-06-17 1994-03-29 Nikon Corporation Method and apparatus for exposure process
JPH06196723A (ja) * 1992-04-28 1994-07-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
WO1994004673A1 (en) * 1992-08-19 1994-03-03 Alko Group Ltd. Fungal promoters active in the presence of glucose
US5300447A (en) * 1992-09-29 1994-04-05 Texas Instruments Incorporated Method of manufacturing a minimum scaled transistor
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
US5418376A (en) * 1993-03-02 1995-05-23 Toyo Denki Seizo Kabushiki Kaisha Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure
DE4417150C2 (de) * 1994-05-17 1996-03-14 Siemens Ag Verfahren zur Herstellung einer Anordnung mit selbstverstärkenden dynamischen MOS-Transistorspeicherzellen
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチmosfet
JP3325736B2 (ja) * 1995-02-09 2002-09-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3291957B2 (ja) * 1995-02-17 2002-06-17 富士電機株式会社 縦型トレンチmisfetおよびその製造方法
US5595927A (en) * 1995-03-17 1997-01-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for making self-aligned source/drain mask ROM memory cell using trench etched channel
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
JPH08306914A (ja) * 1995-04-27 1996-11-22 Nippondenso Co Ltd 半導体装置およびその製造方法
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5629543A (en) * 1995-08-21 1997-05-13 Siliconix Incorporated Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US5705409A (en) * 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP4047384B2 (ja) * 1996-02-05 2008-02-13 シーメンス アクチエンゲゼルシヤフト 電界効果により制御可能の半導体デバイス
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
JP2891205B2 (ja) * 1996-10-21 1999-05-17 日本電気株式会社 半導体集積回路の製造方法
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6168983B1 (en) * 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
EP0950064A1 (en) * 1996-11-29 1999-10-20 Röhm Enzyme Finland Oy Genes encoding transcriptional regulatory proteins from trichoderma reesei and uses thereof
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US5877528A (en) * 1997-03-03 1999-03-02 Megamos Corporation Structure to provide effective channel-stop in termination areas for trenched power transistors
KR100225409B1 (ko) * 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
US5879994A (en) * 1997-04-15 1999-03-09 National Semiconductor Corporation Self-aligned method of fabricating terrace gate DMOS transistor
US6037628A (en) * 1997-06-30 2000-03-14 Intersil Corporation Semiconductor structures with trench contacts
ATE277184T1 (de) * 1997-07-11 2004-10-15 Genencor Int Trichoderma reesei swollenin protein und dafür kodierende dns sequenz
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6337499B1 (en) * 1997-11-03 2002-01-08 Infineon Technologies Ag Semiconductor component
GB9723468D0 (en) * 1997-11-07 1998-01-07 Zetex Plc Method of semiconductor device fabrication
US5900663A (en) * 1998-02-07 1999-05-04 Xemod, Inc. Quasi-mesh gate structure for lateral RF MOS devices
US5949104A (en) * 1998-02-07 1999-09-07 Xemod, Inc. Source connection structure for lateral RF MOS devices
US5897343A (en) * 1998-03-30 1999-04-27 Motorola, Inc. Method of making a power switching trench MOSFET having aligned source regions
EP0996981A1 (de) * 1998-04-08 2000-05-03 Siemens Aktiengesellschaft Hochvolt-randabschluss für planarstrukturen
US5945724A (en) * 1998-04-09 1999-08-31 Micron Technology, Inc. Trench isolation region for semiconductor device
US6048772A (en) * 1998-05-04 2000-04-11 Xemod, Inc. Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection
DE19820223C1 (de) * 1998-05-06 1999-11-04 Siemens Ag Verfahren zum Herstellen einer Epitaxieschicht mit lateral veränderlicher Dotierung
US6015727A (en) * 1998-06-08 2000-01-18 Wanlass; Frank M. Damascene formation of borderless contact MOS transistors
DE19848828C2 (de) * 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
DE19854915C2 (de) * 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
EP1163260B1 (en) * 1999-03-25 2009-05-20 Valtion Teknillinen Tutkimuskeskus Process for partitioning of proteins
US6188105B1 (en) * 1999-04-01 2001-02-13 Intersil Corporation High density MOS-gated power device and process for forming same
US6198127B1 (en) * 1999-05-19 2001-03-06 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
EP1058318B1 (en) * 1999-06-03 2008-04-16 STMicroelectronics S.r.l. Power semiconductor device having an edge termination structure comprising a voltage divider
JP3851744B2 (ja) * 1999-06-28 2006-11-29 株式会社東芝 半導体装置の製造方法
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
US20030060013A1 (en) * 1999-09-24 2003-03-27 Bruce D. Marchant Method of manufacturing trench field effect transistors with trenched heavy body
GB9922764D0 (en) * 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6222233B1 (en) * 1999-10-04 2001-04-24 Xemod, Inc. Lateral RF MOS device with improved drain structure
US6346469B1 (en) * 2000-01-03 2002-02-12 Motorola, Inc. Semiconductor device and a process for forming the semiconductor device
US6376878B1 (en) * 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
DE10026740C2 (de) * 2000-05-30 2002-04-11 Infineon Technologies Ag Halbleiterschaltelement mit integrierter Schottky-Diode und Verfahren zu dessen Herstellung
US6479352B2 (en) * 2000-06-02 2002-11-12 General Semiconductor, Inc. Method of fabricating high voltage power MOSFET having low on-resistance
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
JP2002043571A (ja) * 2000-07-28 2002-02-08 Nec Kansai Ltd 半導体装置
US6362112B1 (en) * 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
JP2002270840A (ja) * 2001-03-09 2002-09-20 Toshiba Corp パワーmosfet
TW543146B (en) * 2001-03-09 2003-07-21 Fairchild Semiconductor Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier

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