WO2002064624A2 - Improved method for production of secreted proteins in fungi - Google Patents
Improved method for production of secreted proteins in fungi Download PDFInfo
- Publication number
- WO2002064624A2 WO2002064624A2 PCT/FI2002/000116 FI0200116W WO02064624A2 WO 2002064624 A2 WO2002064624 A2 WO 2002064624A2 FI 0200116 W FI0200116 W FI 0200116W WO 02064624 A2 WO02064624 A2 WO 02064624A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- protein
- promoter
- secretable
- regulation
- expression
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N9/00—Enzymes; Proenzymes; Compositions thereof; Processes for preparing, activating, inhibiting, separating or purifying enzymes
- C12N9/14—Hydrolases (3)
- C12N9/24—Hydrolases (3) acting on glycosyl compounds (3.2)
- C12N9/2402—Hydrolases (3) acting on glycosyl compounds (3.2) hydrolysing O- and S- glycosyl compounds (3.2.1)
- C12N9/2405—Glucanases
- C12N9/2408—Glucanases acting on alpha -1,4-glucosidic bonds
- C12N9/2411—Amylases
- C12N9/2428—Glucan 1,4-alpha-glucosidase (3.2.1.3), i.e. glucoamylase
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N15/00—Mutation or genetic engineering; DNA or RNA concerning genetic engineering, vectors, e.g. plasmids, or their isolation, preparation or purification; Use of hosts therefor
- C12N15/09—Recombinant DNA-technology
- C12N15/63—Introduction of foreign genetic material using vectors; Vectors; Use of hosts therefor; Regulation of expression
- C12N15/79—Vectors or expression systems specially adapted for eukaryotic hosts
- C12N15/80—Vectors or expression systems specially adapted for eukaryotic hosts for fungi
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12Y—ENZYMES
- C12Y302/00—Hydrolases acting on glycosyl compounds, i.e. glycosylases (3.2)
- C12Y302/01—Glycosidases, i.e. enzymes hydrolysing O- and S-glycosyl compounds (3.2.1)
- C12Y302/01003—Glucan 1,4-alpha-glucosidase (3.2.1.3), i.e. glucoamylase
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Genetics & Genomics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Zoology (AREA)
- Wood Science & Technology (AREA)
- General Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Biotechnology (AREA)
- Microbiology (AREA)
- Molecular Biology (AREA)
- Biophysics (AREA)
- Physics & Mathematics (AREA)
- Plant Pathology (AREA)
- Mycology (AREA)
- Medicinal Chemistry (AREA)
- Micro-Organisms Or Cultivation Processes Thereof (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Enzymes And Modification Thereof (AREA)
- Peptides Or Proteins (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002438356A CA2438356A1 (en) | 2001-02-13 | 2002-02-13 | Improved method for production of secreted proteins in fungi |
| EP02700285A EP1360196A2 (en) | 2001-02-13 | 2002-02-13 | Improved method for production of secreted proteins in fungi |
| AU2002233373A AU2002233373B2 (en) | 2001-02-13 | 2002-02-13 | Improved method for production of secreted proteins in fungi |
| JP2002564953A JP4302985B2 (ja) | 2001-02-13 | 2002-02-13 | 真菌における分泌タンパク質の産生のための改良法 |
| US10/467,710 US20040115790A1 (en) | 2001-02-13 | 2002-02-13 | Method for production of secreted proteins in fungi |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20010272A FI120310B (fi) | 2001-02-13 | 2001-02-13 | Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä |
| FI20010272 | 2001-02-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2002064624A2 true WO2002064624A2 (en) | 2002-08-22 |
| WO2002064624A3 WO2002064624A3 (en) | 2002-11-21 |
| WO2002064624A8 WO2002064624A8 (en) | 2003-11-27 |
Family
ID=8560341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FI2002/000116 Ceased WO2002064624A2 (en) | 2001-02-13 | 2002-02-13 | Improved method for production of secreted proteins in fungi |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20040115790A1 (enExample) |
| EP (1) | EP1360196A2 (enExample) |
| JP (1) | JP4302985B2 (enExample) |
| AU (1) | AU2002233373B2 (enExample) |
| CA (1) | CA2438356A1 (enExample) |
| FI (1) | FI120310B (enExample) |
| WO (1) | WO2002064624A2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006506980A (ja) * | 2002-09-10 | 2006-03-02 | ジェネンコー・インターナショナル・インク | 高濃度糖類混合物を用いた遺伝子発現の誘発 |
| WO2008079228A1 (en) * | 2006-12-20 | 2008-07-03 | Danisco Us, Inc., Genencor Division | Assays for improved fungal strains |
| CN108192919A (zh) * | 2018-02-01 | 2018-06-22 | 中国农业大学 | 一种培育抗旱转基因棉花的方法 |
| US20220025423A1 (en) * | 2018-11-28 | 2022-01-27 | Novozymes A/S | Modified Filamentous Fungal Host Cells |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2575319C (en) * | 2004-07-27 | 2014-10-14 | Unilever Plc | Aerated food products containing hydrophobin |
| JP5631533B2 (ja) * | 2004-12-23 | 2014-11-26 | ノボザイムス バイオファーマ デーコー アクティーゼルスカブ | 遺伝子発現技術 |
| MX2007012954A (es) * | 2005-04-20 | 2008-01-11 | Wyeth Corp | Sistemas de expresion en mamiferos. |
| BRPI0715360B8 (pt) | 2006-07-27 | 2022-01-04 | Wyeth Corp | método para a produção de uma proteína recombinante; método para a produção de uma proteína 2086 meningocócica recombinante (p2086); e composição |
| WO2009158627A2 (en) * | 2008-06-27 | 2009-12-30 | Edeniq, Inc. | Cellulosic protein expression in yeast |
| WO2010111208A1 (en) * | 2009-03-23 | 2010-09-30 | University Of Miami | Mitochondrial inhibitors and uses thereof |
| AT510299B1 (de) * | 2010-12-22 | 2012-03-15 | Univ Wien Tech | Verfahren und mittel zur herstellung von n-acetylneuraminsäure (neunac) |
| WO2019003180A1 (en) * | 2017-06-29 | 2019-01-03 | Savitribai Phule Pune University | IMPROVED PRODUCTION AND USES OF A SELF-ASSEMBLY PROTEIN SECRETED BY AN NATIVE YARROWIA LIPOLYTICA STRAIN |
| CN113528492B (zh) * | 2021-09-07 | 2022-07-22 | 山东大学 | 一种将木质纤维素水解液回用于发酵生产纤维素酶液的方法 |
Family Cites Families (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3497777A (en) * | 1967-06-13 | 1970-02-24 | Stanislas Teszner | Multichannel field-effect semi-conductor device |
| US3564356A (en) * | 1968-10-24 | 1971-02-16 | Tektronix Inc | High voltage integrated circuit transistor |
| US4638344A (en) * | 1979-10-09 | 1987-01-20 | Cardwell Jr Walter T | Junction field-effect transistor controlled by merged depletion regions |
| US4326332A (en) * | 1980-07-28 | 1982-04-27 | International Business Machines Corp. | Method of making a high density V-MOS memory array |
| JPS6016420A (ja) * | 1983-07-08 | 1985-01-28 | Mitsubishi Electric Corp | 選択的エピタキシヤル成長方法 |
| US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
| FR2566179B1 (fr) * | 1984-06-14 | 1986-08-22 | Commissariat Energie Atomique | Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement |
| GB8610600D0 (en) | 1986-04-30 | 1986-06-04 | Novo Industri As | Transformation of trichoderma |
| JPH0693512B2 (ja) * | 1986-06-17 | 1994-11-16 | 日産自動車株式会社 | 縦形mosfet |
| US5607511A (en) * | 1992-02-21 | 1997-03-04 | International Business Machines Corporation | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| US4746630A (en) * | 1986-09-17 | 1988-05-24 | Hewlett-Packard Company | Method for producing recessed field oxide with improved sidewall characteristics |
| US5105243A (en) * | 1987-02-26 | 1992-04-14 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
| US4821095A (en) * | 1987-03-12 | 1989-04-11 | General Electric Company | Insulated gate semiconductor device with extra short grid and method of fabrication |
| US4801986A (en) * | 1987-04-03 | 1989-01-31 | General Electric Company | Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method |
| US4823176A (en) * | 1987-04-03 | 1989-04-18 | General Electric Company | Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
| US4811065A (en) * | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
| US4893160A (en) * | 1987-11-13 | 1990-01-09 | Siliconix Incorporated | Method for increasing the performance of trenched devices and the resulting structure |
| US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
| US4903189A (en) * | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
| JPH0216763A (ja) * | 1988-07-05 | 1990-01-19 | Toshiba Corp | 半導体装置の製造方法 |
| US5111253A (en) * | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
| US4992390A (en) * | 1989-07-06 | 1991-02-12 | General Electric Company | Trench gate structure with thick bottom oxide |
| DE69034136T2 (de) * | 1989-08-31 | 2005-01-20 | Denso Corp., Kariya | Bipolarer transistor mit isolierter steuerelektrode |
| US5079608A (en) * | 1990-11-06 | 1992-01-07 | Harris Corporation | Power MOSFET transistor circuit with active clamp |
| US5298761A (en) * | 1991-06-17 | 1994-03-29 | Nikon Corporation | Method and apparatus for exposure process |
| JPH06196723A (ja) * | 1992-04-28 | 1994-07-15 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US5430324A (en) * | 1992-07-23 | 1995-07-04 | Siliconix, Incorporated | High voltage transistor having edge termination utilizing trench technology |
| US5294824A (en) * | 1992-07-31 | 1994-03-15 | Motorola, Inc. | High voltage transistor having reduced on-resistance |
| WO1994004673A1 (en) * | 1992-08-19 | 1994-03-03 | Alko Group Ltd. | Fungal promoters active in the presence of glucose |
| US5300447A (en) * | 1992-09-29 | 1994-04-05 | Texas Instruments Incorporated | Method of manufacturing a minimum scaled transistor |
| US5275965A (en) * | 1992-11-25 | 1994-01-04 | Micron Semiconductor, Inc. | Trench isolation using gated sidewalls |
| US5418376A (en) * | 1993-03-02 | 1995-05-23 | Toyo Denki Seizo Kabushiki Kaisha | Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure |
| DE4417150C2 (de) * | 1994-05-17 | 1996-03-14 | Siemens Ag | Verfahren zur Herstellung einer Anordnung mit selbstverstärkenden dynamischen MOS-Transistorspeicherzellen |
| US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
| US5583368A (en) * | 1994-08-11 | 1996-12-10 | International Business Machines Corporation | Stacked devices |
| US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
| US5597765A (en) * | 1995-01-10 | 1997-01-28 | Siliconix Incorporated | Method for making termination structure for power MOSFET |
| JPH08204179A (ja) * | 1995-01-26 | 1996-08-09 | Fuji Electric Co Ltd | 炭化ケイ素トレンチmosfet |
| JP3325736B2 (ja) * | 1995-02-09 | 2002-09-17 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| JP3291957B2 (ja) * | 1995-02-17 | 2002-06-17 | 富士電機株式会社 | 縦型トレンチmisfetおよびその製造方法 |
| US5595927A (en) * | 1995-03-17 | 1997-01-21 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for making self-aligned source/drain mask ROM memory cell using trench etched channel |
| US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
| JPH08306914A (ja) * | 1995-04-27 | 1996-11-22 | Nippondenso Co Ltd | 半導体装置およびその製造方法 |
| US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
| US5629543A (en) * | 1995-08-21 | 1997-05-13 | Siliconix Incorporated | Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness |
| US5879971A (en) * | 1995-09-28 | 1999-03-09 | Motorola Inc. | Trench random access memory cell and method of formation |
| US5705409A (en) * | 1995-09-28 | 1998-01-06 | Motorola Inc. | Method for forming trench transistor structure |
| US6037632A (en) * | 1995-11-06 | 2000-03-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP4047384B2 (ja) * | 1996-02-05 | 2008-02-13 | シーメンス アクチエンゲゼルシヤフト | 電界効果により制御可能の半導体デバイス |
| US5770878A (en) * | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
| US5719409A (en) * | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
| JP2891205B2 (ja) * | 1996-10-21 | 1999-05-17 | 日本電気株式会社 | 半導体集積回路の製造方法 |
| US6207994B1 (en) * | 1996-11-05 | 2001-03-27 | Power Integrations, Inc. | High-voltage transistor with multi-layer conduction region |
| US6168983B1 (en) * | 1996-11-05 | 2001-01-02 | Power Integrations, Inc. | Method of making a high-voltage transistor with multiple lateral conduction layers |
| EP0950064A1 (en) * | 1996-11-29 | 1999-10-20 | Röhm Enzyme Finland Oy | Genes encoding transcriptional regulatory proteins from trichoderma reesei and uses thereof |
| US6011298A (en) * | 1996-12-31 | 2000-01-04 | Stmicroelectronics, Inc. | High voltage termination with buried field-shaping region |
| JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
| US5877528A (en) * | 1997-03-03 | 1999-03-02 | Megamos Corporation | Structure to provide effective channel-stop in termination areas for trenched power transistors |
| KR100225409B1 (ko) * | 1997-03-27 | 1999-10-15 | 김덕중 | 트렌치 디-모오스 및 그의 제조 방법 |
| US5879994A (en) * | 1997-04-15 | 1999-03-09 | National Semiconductor Corporation | Self-aligned method of fabricating terrace gate DMOS transistor |
| US6037628A (en) * | 1997-06-30 | 2000-03-14 | Intersil Corporation | Semiconductor structures with trench contacts |
| ATE277184T1 (de) * | 1997-07-11 | 2004-10-15 | Genencor Int | Trichoderma reesei swollenin protein und dafür kodierende dns sequenz |
| JP3502531B2 (ja) * | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| DE19740195C2 (de) * | 1997-09-12 | 1999-12-02 | Siemens Ag | Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom |
| US6337499B1 (en) * | 1997-11-03 | 2002-01-08 | Infineon Technologies Ag | Semiconductor component |
| GB9723468D0 (en) * | 1997-11-07 | 1998-01-07 | Zetex Plc | Method of semiconductor device fabrication |
| US5900663A (en) * | 1998-02-07 | 1999-05-04 | Xemod, Inc. | Quasi-mesh gate structure for lateral RF MOS devices |
| US5949104A (en) * | 1998-02-07 | 1999-09-07 | Xemod, Inc. | Source connection structure for lateral RF MOS devices |
| US5897343A (en) * | 1998-03-30 | 1999-04-27 | Motorola, Inc. | Method of making a power switching trench MOSFET having aligned source regions |
| EP0996981A1 (de) * | 1998-04-08 | 2000-05-03 | Siemens Aktiengesellschaft | Hochvolt-randabschluss für planarstrukturen |
| US5945724A (en) * | 1998-04-09 | 1999-08-31 | Micron Technology, Inc. | Trench isolation region for semiconductor device |
| US6048772A (en) * | 1998-05-04 | 2000-04-11 | Xemod, Inc. | Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection |
| DE19820223C1 (de) * | 1998-05-06 | 1999-11-04 | Siemens Ag | Verfahren zum Herstellen einer Epitaxieschicht mit lateral veränderlicher Dotierung |
| US6015727A (en) * | 1998-06-08 | 2000-01-18 | Wanlass; Frank M. | Damascene formation of borderless contact MOS transistors |
| DE19848828C2 (de) * | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit |
| DE19854915C2 (de) * | 1998-11-27 | 2002-09-05 | Infineon Technologies Ag | MOS-Feldeffekttransistor mit Hilfselektrode |
| US6351018B1 (en) * | 1999-02-26 | 2002-02-26 | Fairchild Semiconductor Corporation | Monolithically integrated trench MOSFET and Schottky diode |
| US6204097B1 (en) * | 1999-03-01 | 2001-03-20 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacture |
| EP1163260B1 (en) * | 1999-03-25 | 2009-05-20 | Valtion Teknillinen Tutkimuskeskus | Process for partitioning of proteins |
| US6188105B1 (en) * | 1999-04-01 | 2001-02-13 | Intersil Corporation | High density MOS-gated power device and process for forming same |
| US6198127B1 (en) * | 1999-05-19 | 2001-03-06 | Intersil Corporation | MOS-gated power device having extended trench and doping zone and process for forming same |
| US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| EP1058318B1 (en) * | 1999-06-03 | 2008-04-16 | STMicroelectronics S.r.l. | Power semiconductor device having an edge termination structure comprising a voltage divider |
| JP3851744B2 (ja) * | 1999-06-28 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
| GB9917099D0 (en) * | 1999-07-22 | 1999-09-22 | Koninkl Philips Electronics Nv | Cellular trench-gate field-effect transistors |
| JP3971062B2 (ja) * | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
| US20030060013A1 (en) * | 1999-09-24 | 2003-03-27 | Bruce D. Marchant | Method of manufacturing trench field effect transistors with trenched heavy body |
| GB9922764D0 (en) * | 1999-09-28 | 1999-11-24 | Koninkl Philips Electronics Nv | Manufacture of trench-gate semiconductor devices |
| US6222233B1 (en) * | 1999-10-04 | 2001-04-24 | Xemod, Inc. | Lateral RF MOS device with improved drain structure |
| US6346469B1 (en) * | 2000-01-03 | 2002-02-12 | Motorola, Inc. | Semiconductor device and a process for forming the semiconductor device |
| US6376878B1 (en) * | 2000-02-11 | 2002-04-23 | Fairchild Semiconductor Corporation | MOS-gated devices with alternating zones of conductivity |
| DE10026740C2 (de) * | 2000-05-30 | 2002-04-11 | Infineon Technologies Ag | Halbleiterschaltelement mit integrierter Schottky-Diode und Verfahren zu dessen Herstellung |
| US6479352B2 (en) * | 2000-06-02 | 2002-11-12 | General Semiconductor, Inc. | Method of fabricating high voltage power MOSFET having low on-resistance |
| US6627949B2 (en) * | 2000-06-02 | 2003-09-30 | General Semiconductor, Inc. | High voltage power MOSFET having low on-resistance |
| US6921939B2 (en) * | 2000-07-20 | 2005-07-26 | Fairchild Semiconductor Corporation | Power MOSFET and method for forming same using a self-aligned body implant |
| JP2002043571A (ja) * | 2000-07-28 | 2002-02-08 | Nec Kansai Ltd | 半導体装置 |
| US6362112B1 (en) * | 2000-11-08 | 2002-03-26 | Fabtech, Inc. | Single step etched moat |
| JP2002270840A (ja) * | 2001-03-09 | 2002-09-20 | Toshiba Corp | パワーmosfet |
| TW543146B (en) * | 2001-03-09 | 2003-07-21 | Fairchild Semiconductor | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
| US6621107B2 (en) * | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
-
2001
- 2001-02-13 FI FI20010272A patent/FI120310B/fi not_active IP Right Cessation
-
2002
- 2002-02-13 AU AU2002233373A patent/AU2002233373B2/en not_active Ceased
- 2002-02-13 JP JP2002564953A patent/JP4302985B2/ja not_active Expired - Fee Related
- 2002-02-13 WO PCT/FI2002/000116 patent/WO2002064624A2/en not_active Ceased
- 2002-02-13 CA CA002438356A patent/CA2438356A1/en not_active Abandoned
- 2002-02-13 EP EP02700285A patent/EP1360196A2/en not_active Withdrawn
- 2002-02-13 US US10/467,710 patent/US20040115790A1/en not_active Abandoned
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006506980A (ja) * | 2002-09-10 | 2006-03-02 | ジェネンコー・インターナショナル・インク | 高濃度糖類混合物を用いた遺伝子発現の誘発 |
| US9034628B2 (en) | 2002-09-10 | 2015-05-19 | Danisco Us Inc. | Induction of gene expression using a high concentration sugar mixture |
| WO2008079228A1 (en) * | 2006-12-20 | 2008-07-03 | Danisco Us, Inc., Genencor Division | Assays for improved fungal strains |
| CN108192919A (zh) * | 2018-02-01 | 2018-06-22 | 中国农业大学 | 一种培育抗旱转基因棉花的方法 |
| CN108192919B (zh) * | 2018-02-01 | 2020-08-18 | 中国农业大学 | 一种培育抗旱转基因棉花的方法 |
| US20220025423A1 (en) * | 2018-11-28 | 2022-01-27 | Novozymes A/S | Modified Filamentous Fungal Host Cells |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004526440A (ja) | 2004-09-02 |
| WO2002064624A3 (en) | 2002-11-21 |
| JP4302985B2 (ja) | 2009-07-29 |
| EP1360196A2 (en) | 2003-11-12 |
| US20040115790A1 (en) | 2004-06-17 |
| AU2002233373B2 (en) | 2007-11-15 |
| CA2438356A1 (en) | 2002-08-22 |
| FI20010272A0 (fi) | 2001-02-13 |
| WO2002064624A8 (en) | 2003-11-27 |
| FI120310B (fi) | 2009-09-15 |
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