JP2004521509A5 - - Google Patents

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Publication number
JP2004521509A5
JP2004521509A5 JP2002586411A JP2002586411A JP2004521509A5 JP 2004521509 A5 JP2004521509 A5 JP 2004521509A5 JP 2002586411 A JP2002586411 A JP 2002586411A JP 2002586411 A JP2002586411 A JP 2002586411A JP 2004521509 A5 JP2004521509 A5 JP 2004521509A5
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JP
Japan
Prior art keywords
layer
generation layer
mirror
hole
tiling
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JP2002586411A
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English (en)
Japanese (ja)
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JP4163004B2 (ja
JP2004521509A (ja
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Priority claimed from FR0105652A external-priority patent/FR2824228B1/fr
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Publication of JP2004521509A publication Critical patent/JP2004521509A/ja
Publication of JP2004521509A5 publication Critical patent/JP2004521509A5/ja
Application granted granted Critical
Publication of JP4163004B2 publication Critical patent/JP4163004B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002586411A 2001-04-26 2002-04-18 光取り出し手段を持つ電界発光素子 Expired - Fee Related JP4163004B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0105652A FR2824228B1 (fr) 2001-04-26 2001-04-26 Dispositif electroluminescent a extracteur de lumiere
PCT/FR2002/001341 WO2002089218A2 (fr) 2001-04-26 2002-04-18 Dispositif electroluminescent a extracteur de lumiere

Publications (3)

Publication Number Publication Date
JP2004521509A JP2004521509A (ja) 2004-07-15
JP2004521509A5 true JP2004521509A5 (enExample) 2008-07-17
JP4163004B2 JP4163004B2 (ja) 2008-10-08

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ID=8862739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002586411A Expired - Fee Related JP4163004B2 (ja) 2001-04-26 2002-04-18 光取り出し手段を持つ電界発光素子

Country Status (9)

Country Link
US (1) US6987288B2 (enExample)
EP (1) EP1382074B1 (enExample)
JP (1) JP4163004B2 (enExample)
AT (1) ATE488027T1 (enExample)
AU (1) AU2002256752A1 (enExample)
CA (1) CA2444338C (enExample)
DE (1) DE60238245D1 (enExample)
FR (1) FR2824228B1 (enExample)
WO (1) WO2002089218A2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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JP3956918B2 (ja) 2002-10-03 2007-08-08 日亜化学工業株式会社 発光ダイオード
JP2004172506A (ja) 2002-11-22 2004-06-17 Sony Corp 半導体レーザ素子
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US7078735B2 (en) 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
JP4263121B2 (ja) * 2003-03-27 2009-05-13 三洋電機株式会社 発光素子および照明装置
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
JP2006059864A (ja) * 2004-08-17 2006-03-02 Yokohama National Univ 発光素子
US7509012B2 (en) * 2004-09-22 2009-03-24 Luxtaltek Corporation Light emitting diode structures
JP4410123B2 (ja) 2005-02-10 2010-02-03 株式会社東芝 有機ｅｌディスプレイ
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JP4843284B2 (ja) * 2005-09-22 2011-12-21 パナソニック電工株式会社 半導体発光素子およびその製造方法
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US7717343B2 (en) * 2006-01-12 2010-05-18 Hand Held Products, Inc. High-efficiency illumination in data collection devices
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KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR101113878B1 (ko) 2006-06-23 2012-03-09 엘지이노텍 주식회사 수직형 발광 소자 및 그 제조방법
JP5168890B2 (ja) * 2006-11-24 2013-03-27 日亜化学工業株式会社 半導体発光素子及び半導体発光素子の製造方法
JP2010525555A (ja) * 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
JP5242975B2 (ja) * 2007-09-03 2013-07-24 独立行政法人科学技術振興機構 回折格子型発光ダイオード
JP2009170508A (ja) * 2008-01-11 2009-07-30 Furukawa Electric Co Ltd:The 面発光半導体レーザ及びその製造方法
KR20110019390A (ko) * 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
KR20110031957A (ko) * 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 변환 구조물
US8324000B2 (en) * 2008-06-26 2012-12-04 3M Innovative Properties Company Method of fabricating light extractor
JP2011526074A (ja) * 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー 半導体光変換構成体
US20110101402A1 (en) * 2008-06-26 2011-05-05 Jun-Ying Zhang Semiconductor light converting construction
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
EP2460191A2 (en) 2009-07-30 2012-06-06 3M Innovative Properties Company Pixelated led
JP2011187616A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 半導体発光素子およびその製造方法
DE102014110069A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Strukturierungsmaske und einer Oberflächenstrukturierung
WO2017175201A2 (en) * 2016-04-08 2017-10-12 Novagan Low etendue high brightness light emitting devices
FR3059787B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
FR3059788B1 (fr) 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
CN117316564B (zh) * 2023-09-26 2025-04-04 南京大学 一种CoMnSi基磁致伸缩复合材料及其制备方法
CN118352450A (zh) * 2024-04-03 2024-07-16 江苏宜兴德融科技有限公司 一种红光led结构及其制备方法

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US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
WO2002073753A2 (en) * 2001-03-09 2002-09-19 Alight Technologies A/S Mode control using transversal bandgap structure in vcsels

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