FR3059787B1 - Dispositif optoelectronique a diode electroluminescente a extraction augmentee - Google Patents
Dispositif optoelectronique a diode electroluminescente a extraction augmentee Download PDFInfo
- Publication number
- FR3059787B1 FR3059787B1 FR1661874A FR1661874A FR3059787B1 FR 3059787 B1 FR3059787 B1 FR 3059787B1 FR 1661874 A FR1661874 A FR 1661874A FR 1661874 A FR1661874 A FR 1661874A FR 3059787 B1 FR3059787 B1 FR 3059787B1
- Authority
- FR
- France
- Prior art keywords
- face
- diode device
- electromagnetic radiation
- electroluminescent diode
- increased extraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000605 extraction Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 3
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
L'invention concerne un dispositif optoélectronique (30) comprenant une zone active (18) adaptée à fournir un rayonnement électromagnétique et prise en sandwich entre des première et deuxième couches semiconductrices (14, 32), la première couche semiconductrice délimitant une face (38) et comprenant une première portion (34) au contact de zone active et délimitant une première partie (40) de la face et se prolongeant par une deuxième portion (36) délimitant une deuxième partie (42) de la face, la deuxième portion formant un guide d'onde monomode, le dispositif optoélectronique comprenant une portion (44) opaque et réfléchissante au rayonnement électromagnétique recouvrant la première partie et comprenant un réseau de diffraction (46) sur la deuxième partie adapté à extraire le rayonnement électromagnétique de la deuxième portion selon une direction sensiblement perpendiculaire à la première partie à 10° près.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1661874A FR3059787B1 (fr) | 2016-12-02 | 2016-12-02 | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
PCT/FR2017/053291 WO2018100293A1 (fr) | 2016-12-02 | 2017-11-30 | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
TW106142064A TW201826560A (zh) | 2016-12-02 | 2017-12-01 | 包含具有增加提取的發光二極體的光電裝置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1661874A FR3059787B1 (fr) | 2016-12-02 | 2016-12-02 | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
FR1661874 | 2016-12-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3059787A1 FR3059787A1 (fr) | 2018-06-08 |
FR3059787B1 true FR3059787B1 (fr) | 2019-01-25 |
Family
ID=58707617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1661874A Expired - Fee Related FR3059787B1 (fr) | 2016-12-02 | 2016-12-02 | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR3059787B1 (fr) |
TW (1) | TW201826560A (fr) |
WO (1) | WO2018100293A1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0977280A3 (fr) * | 1998-07-28 | 2008-11-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Dispositifs émetteurs de radiation à rendement élevé et méthode pour fabriquer de tels dispositifs |
FR2824228B1 (fr) * | 2001-04-26 | 2003-08-01 | Centre Nat Rech Scient | Dispositif electroluminescent a extracteur de lumiere |
US7582910B2 (en) * | 2005-02-28 | 2009-09-01 | The Regents Of The University Of California | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
US7868542B2 (en) * | 2007-02-09 | 2011-01-11 | Canon Kabushiki Kaisha | Light-emitting apparatus having periodic structure and sandwiched optical waveguide |
US20090050905A1 (en) * | 2007-08-20 | 2009-02-26 | Abu-Ageel Nayef M | Highly Efficient Light-Emitting Diode |
-
2016
- 2016-12-02 FR FR1661874A patent/FR3059787B1/fr not_active Expired - Fee Related
-
2017
- 2017-11-30 WO PCT/FR2017/053291 patent/WO2018100293A1/fr active Application Filing
- 2017-12-01 TW TW106142064A patent/TW201826560A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
FR3059787A1 (fr) | 2018-06-08 |
TW201826560A (zh) | 2018-07-16 |
WO2018100293A1 (fr) | 2018-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Search report ready |
Effective date: 20180608 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
ST | Notification of lapse |
Effective date: 20200910 |