CA2444338C - Dispositif electroluminescent a extracteur de lumiere - Google Patents

Dispositif electroluminescent a extracteur de lumiere Download PDF

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Publication number
CA2444338C
CA2444338C CA2444338A CA2444338A CA2444338C CA 2444338 C CA2444338 C CA 2444338C CA 2444338 A CA2444338 A CA 2444338A CA 2444338 A CA2444338 A CA 2444338A CA 2444338 C CA2444338 C CA 2444338C
Authority
CA
Canada
Prior art keywords
photons
holes
electron
layer
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA2444338A
Other languages
English (en)
French (fr)
Other versions
CA2444338A1 (fr
Inventor
Maxime Rattier
Henri Benisty
Claude Weisbuch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Ecole Polytechnique filed Critical Centre National de la Recherche Scientifique CNRS
Publication of CA2444338A1 publication Critical patent/CA2444338A1/fr
Application granted granted Critical
Publication of CA2444338C publication Critical patent/CA2444338C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Radiation-Therapy Devices (AREA)
  • Control Of El Displays (AREA)
CA2444338A 2001-04-26 2002-04-18 Dispositif electroluminescent a extracteur de lumiere Expired - Fee Related CA2444338C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR01/05652 2001-04-26
FR0105652A FR2824228B1 (fr) 2001-04-26 2001-04-26 Dispositif electroluminescent a extracteur de lumiere
PCT/FR2002/001341 WO2002089218A2 (fr) 2001-04-26 2002-04-18 Dispositif electroluminescent a extracteur de lumiere

Publications (2)

Publication Number Publication Date
CA2444338A1 CA2444338A1 (fr) 2002-11-07
CA2444338C true CA2444338C (fr) 2012-10-30

Family

ID=8862739

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2444338A Expired - Fee Related CA2444338C (fr) 2001-04-26 2002-04-18 Dispositif electroluminescent a extracteur de lumiere

Country Status (9)

Country Link
US (1) US6987288B2 (enExample)
EP (1) EP1382074B1 (enExample)
JP (1) JP4163004B2 (enExample)
AT (1) ATE488027T1 (enExample)
AU (1) AU2002256752A1 (enExample)
CA (1) CA2444338C (enExample)
DE (1) DE60238245D1 (enExample)
FR (1) FR2824228B1 (enExample)
WO (1) WO2002089218A2 (enExample)

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JP3956918B2 (ja) 2002-10-03 2007-08-08 日亜化学工業株式会社 発光ダイオード
JP2004172506A (ja) * 2002-11-22 2004-06-17 Sony Corp 半導体レーザ素子
JP4610863B2 (ja) * 2003-03-19 2011-01-12 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー フォトニック結晶構造を使用するｌｅｄ効率の改良
JP4263121B2 (ja) * 2003-03-27 2009-05-13 三洋電機株式会社 発光素子および照明装置
US7078735B2 (en) 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
JP2006059864A (ja) * 2004-08-17 2006-03-02 Yokohama National Univ 発光素子
US7509012B2 (en) * 2004-09-22 2009-03-24 Luxtaltek Corporation Light emitting diode structures
JP4410123B2 (ja) 2005-02-10 2010-02-03 株式会社東芝 有機ｅｌディスプレイ
JP2008311687A (ja) * 2005-03-28 2008-12-25 Stanley Electric Co Ltd 自発光デバイス
KR100706796B1 (ko) * 2005-08-19 2007-04-12 삼성전자주식회사 질화물계 탑에미트형 발광소자 및 그 제조 방법
JP2007088273A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
JP4843284B2 (ja) * 2005-09-22 2011-12-21 パナソニック電工株式会社 半導体発光素子およびその製造方法
US7717343B2 (en) * 2006-01-12 2010-05-18 Hand Held Products, Inc. High-efficiency illumination in data collection devices
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
CN102361052B (zh) 2006-06-23 2015-09-30 Lg电子株式会社 具有垂直拓扑的发光二极管及其制造方法
JP5168890B2 (ja) * 2006-11-24 2013-03-27 日亜化学工業株式会社 半導体発光素子及び半導体発光素子の製造方法
US8941566B2 (en) * 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
JP5242975B2 (ja) * 2007-09-03 2013-07-24 独立行政法人科学技術振興機構 回折格子型発光ダイオード
JP2009170508A (ja) * 2008-01-11 2009-07-30 Furukawa Electric Co Ltd:The 面発光半導体レーザ及びその製造方法
KR20110019390A (ko) * 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
JP5475767B2 (ja) * 2008-06-26 2014-04-16 スリーエム イノベイティブ プロパティズ カンパニー 光変換構成体
US8324000B2 (en) * 2008-06-26 2012-12-04 3M Innovative Properties Company Method of fabricating light extractor
CN102124582B (zh) * 2008-06-26 2013-11-06 3M创新有限公司 半导体光转换构造
US20110101402A1 (en) * 2008-06-26 2011-05-05 Jun-Ying Zhang Semiconductor light converting construction
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
KR20120038539A (ko) 2009-07-30 2012-04-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 픽셀화된 ｌｅｄ
JP2011187616A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 半導体発光素子およびその製造方法
DE102014110069A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Strukturierungsmaske und einer Oberflächenstrukturierung
WO2017175201A2 (en) * 2016-04-08 2017-10-12 Novagan Low etendue high brightness light emitting devices
FR3059787B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
FR3059788B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
CN117316564B (zh) * 2023-09-26 2025-04-04 南京大学 一种CoMnSi基磁致伸缩复合材料及其制备方法
CN118352450A (zh) * 2024-04-03 2024-07-16 江苏宜兴德融科技有限公司 一种红光led结构及其制备方法

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US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
AU2002237203A1 (en) * 2001-03-09 2002-09-24 Danmarks Tekniske Universitet Mode control using transversal bandgap structure in vcsels

Also Published As

Publication number Publication date
DE60238245D1 (de) 2010-12-23
EP1382074A2 (fr) 2004-01-21
WO2002089218A2 (fr) 2002-11-07
JP2004521509A (ja) 2004-07-15
US20040141333A1 (en) 2004-07-22
ATE488027T1 (de) 2010-11-15
EP1382074B1 (fr) 2010-11-10
FR2824228A1 (fr) 2002-10-31
US6987288B2 (en) 2006-01-17
WO2002089218A3 (fr) 2003-01-09
FR2824228B1 (fr) 2003-08-01
AU2002256752A1 (en) 2002-11-11
CA2444338A1 (fr) 2002-11-07
JP4163004B2 (ja) 2008-10-08

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Legal Events

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EEER Examination request
MKLA Lapsed

Effective date: 20200831