JP2004519837A5 - - Google Patents

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Publication number
JP2004519837A5
JP2004519837A5 JP2002517873A JP2002517873A JP2004519837A5 JP 2004519837 A5 JP2004519837 A5 JP 2004519837A5 JP 2002517873 A JP2002517873 A JP 2002517873A JP 2002517873 A JP2002517873 A JP 2002517873A JP 2004519837 A5 JP2004519837 A5 JP 2004519837A5
Authority
JP
Japan
Prior art keywords
compound semiconductor
evaporation source
semiconductor wafer
depositing
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002517873A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004519837A (ja
Filing date
Publication date
Priority claimed from US09/632,650 external-priority patent/US6451711B1/en
Application filed filed Critical
Publication of JP2004519837A publication Critical patent/JP2004519837A/ja
Publication of JP2004519837A5 publication Critical patent/JP2004519837A5/ja
Pending legal-status Critical Current

Links

JP2002517873A 2000-08-04 2001-08-03 エピタキシャルウェハ装置 Pending JP2004519837A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/632,650 US6451711B1 (en) 2000-05-04 2000-08-04 Epitaxial wafer apparatus
PCT/US2001/024263 WO2002012598A1 (en) 2000-08-04 2001-08-03 Epitaxial wafer apparatus

Publications (2)

Publication Number Publication Date
JP2004519837A JP2004519837A (ja) 2004-07-02
JP2004519837A5 true JP2004519837A5 (enExample) 2005-03-03

Family

ID=24536367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002517873A Pending JP2004519837A (ja) 2000-08-04 2001-08-03 エピタキシャルウェハ装置

Country Status (6)

Country Link
US (1) US6451711B1 (enExample)
EP (1) EP1315852A4 (enExample)
JP (1) JP2004519837A (enExample)
KR (1) KR20030036668A (enExample)
AU (1) AU2001278137A1 (enExample)
WO (1) WO2002012598A1 (enExample)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6933244B2 (en) * 2002-01-22 2005-08-23 Massachusetts Institute Of Technology Method of fabrication for III-V semiconductor surface passivation
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP4249184B2 (ja) 2003-08-12 2009-04-02 日本電信電話株式会社 窒化物半導体成長用基板
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
JP2005235961A (ja) 2004-02-18 2005-09-02 Univ Waseda Ｇａ２Ｏ３系単結晶の導電率制御方法
JP4933513B2 (ja) * 2008-10-14 2012-05-16 日本電信電話株式会社 窒化物半導体成長用基板

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US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
JPS607720A (ja) * 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4802180A (en) * 1986-04-30 1989-01-31 American Telephone And Telegraph Company, At&T Bell Laboratories Growth of congruently melting gadolinium scandium gallium garnet
US4745082A (en) * 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
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US4970060A (en) * 1988-03-04 1990-11-13 Litton Systems, Inc. Pure or mixed monocrystalline boules of lanthanum orthogallate
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US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5550089A (en) 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
JPH0885873A (ja) * 1994-09-16 1996-04-02 Dowa Mining Co Ltd 有機金属錯体を用いる薄膜の製造方法
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JP3734586B2 (ja) 1997-03-05 2006-01-11 富士通株式会社 半導体装置及びその製造方法
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US5945718A (en) 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
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