AU2001278137A1 - Epitaxial wafer apparatus - Google Patents

Epitaxial wafer apparatus

Info

Publication number
AU2001278137A1
AU2001278137A1 AU2001278137A AU7813701A AU2001278137A1 AU 2001278137 A1 AU2001278137 A1 AU 2001278137A1 AU 2001278137 A AU2001278137 A AU 2001278137A AU 7813701 A AU7813701 A AU 7813701A AU 2001278137 A1 AU2001278137 A1 AU 2001278137A1
Authority
AU
Australia
Prior art keywords
epitaxial wafer
wafer apparatus
epitaxial
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001278137A
Other languages
English (en)
Inventor
Walter David Braddock Iv
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001278137A1 publication Critical patent/AU2001278137A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2001278137A 2000-08-04 2001-08-03 Epitaxial wafer apparatus Abandoned AU2001278137A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09632650 2000-08-04
US09/632,650 US6451711B1 (en) 2000-05-04 2000-08-04 Epitaxial wafer apparatus
PCT/US2001/024263 WO2002012598A1 (en) 2000-08-04 2001-08-03 Epitaxial wafer apparatus

Publications (1)

Publication Number Publication Date
AU2001278137A1 true AU2001278137A1 (en) 2002-02-18

Family

ID=24536367

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001278137A Abandoned AU2001278137A1 (en) 2000-08-04 2001-08-03 Epitaxial wafer apparatus

Country Status (6)

Country Link
US (1) US6451711B1 (enExample)
EP (1) EP1315852A4 (enExample)
JP (1) JP2004519837A (enExample)
KR (1) KR20030036668A (enExample)
AU (1) AU2001278137A1 (enExample)
WO (1) WO2002012598A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6933244B2 (en) * 2002-01-22 2005-08-23 Massachusetts Institute Of Technology Method of fabrication for III-V semiconductor surface passivation
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP4249184B2 (ja) 2003-08-12 2009-04-02 日本電信電話株式会社 窒化物半導体成長用基板
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
JP2005235961A (ja) 2004-02-18 2005-09-02 Univ Waseda Ｇａ２Ｏ３系単結晶の導電率制御方法
JP4933513B2 (ja) * 2008-10-14 2012-05-16 日本電信電話株式会社 窒化物半導体成長用基板

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
JPS607720A (ja) * 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4802180A (en) * 1986-04-30 1989-01-31 American Telephone And Telegraph Company, At&T Bell Laboratories Growth of congruently melting gadolinium scandium gallium garnet
US4745082A (en) * 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4843450A (en) 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US4970060A (en) * 1988-03-04 1990-11-13 Litton Systems, Inc. Pure or mixed monocrystalline boules of lanthanum orthogallate
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5055445A (en) * 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5550089A (en) 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
JPH0885873A (ja) * 1994-09-16 1996-04-02 Dowa Mining Co Ltd 有機金属錯体を用いる薄膜の製造方法
US5767388A (en) * 1995-04-26 1998-06-16 Siemens Aktiengesellschaft Methane sensor and method for operating a sensor
US5597768A (en) 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5920105A (en) 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
EP0856600B1 (en) * 1997-01-30 2001-04-25 Nippon Telegraph And Telephone Corporation LiGa02 single crystal, single-crystal substrate, and method of manufacturing the same
US6030453A (en) * 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
JP3734586B2 (ja) 1997-03-05 2006-01-11 富士通株式会社 半導体装置及びその製造方法
US6207976B1 (en) 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US5945718A (en) 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) * 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6150677A (en) 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
US6006582A (en) * 1998-03-17 1999-12-28 Advanced Technology Materials, Inc. Hydrogen sensor utilizing rare earth metal thin film detection element
JP3850580B2 (ja) 1999-03-30 2006-11-29 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US6451711B1 (en) 2002-09-17
EP1315852A1 (en) 2003-06-04
WO2002012598A1 (en) 2002-02-14
JP2004519837A (ja) 2004-07-02
KR20030036668A (ko) 2003-05-09
EP1315852A4 (en) 2005-02-02

Similar Documents

Publication Publication Date Title
AU2000224587A1 (en) Semiconductor device
AU2001236028A1 (en) Semiconductor device
AU2222101A (en) Semiconductor device
AU2001212331A1 (en) Hiking exercice apparatus
AU2002354691A1 (en) Wafer transport apparatus
AU2001241903A1 (en) Snow-gliding apparatus
AU2001234973A1 (en) Semiconductor devices
AUPQ931200A0 (en) Exciter apparatus
AU2002351574A1 (en) Improved self-chekout apparatus
AU2002316979A1 (en) Semiconductor device
AU2001264184A1 (en) An invaginator apparatus
HUP0401882A3 (en) Substrate for epitaxy
AUPR174800A0 (en) Semiconductor processing
AU2002246488A1 (en) Substrate scanning apparatus
AUPR082200A0 (en) An apparatus
AUPQ777500A0 (en) Grinding apparatus
AU2002220829A1 (en) Cooling apparatus
AU2001241521A1 (en) Wafer processing system
GB2361447B (en) Wafer polishing apparatus
AU2001278137A1 (en) Epitaxial wafer apparatus
AU2002357256A1 (en) Semiconductor apparatus
AU2000274531A1 (en) Semiconductor device
GB2361448B (en) Wafer polishing apparatus
AU2000261711A1 (en) Support apparatus
AU2002211162A1 (en) Switching apparatus