KR20030036668A - 에피택셜 웨이퍼 장치 - Google Patents

에피택셜 웨이퍼 장치 Download PDF

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Publication number
KR20030036668A
KR20030036668A KR10-2003-7001599A KR20037001599A KR20030036668A KR 20030036668 A KR20030036668 A KR 20030036668A KR 20037001599 A KR20037001599 A KR 20037001599A KR 20030036668 A KR20030036668 A KR 20030036668A
Authority
KR
South Korea
Prior art keywords
compound semiconductor
semiconductor wafer
providing
layer
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7001599A
Other languages
English (en)
Korean (ko)
Inventor
월터 데이비드 4세 브래드독
Original Assignee
오세미 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오세미 인코포레이티드 filed Critical 오세미 인코포레이티드
Publication of KR20030036668A publication Critical patent/KR20030036668A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR10-2003-7001599A 2000-08-04 2001-08-03 에피택셜 웨이퍼 장치 Ceased KR20030036668A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/632,650 2000-08-04
US09/632,650 US6451711B1 (en) 2000-05-04 2000-08-04 Epitaxial wafer apparatus
PCT/US2001/024263 WO2002012598A1 (en) 2000-08-04 2001-08-03 Epitaxial wafer apparatus

Publications (1)

Publication Number Publication Date
KR20030036668A true KR20030036668A (ko) 2003-05-09

Family

ID=24536367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7001599A Ceased KR20030036668A (ko) 2000-08-04 2001-08-03 에피택셜 웨이퍼 장치

Country Status (6)

Country Link
US (1) US6451711B1 (enExample)
EP (1) EP1315852A4 (enExample)
JP (1) JP2004519837A (enExample)
KR (1) KR20030036668A (enExample)
AU (1) AU2001278137A1 (enExample)
WO (1) WO2002012598A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6933244B2 (en) * 2002-01-22 2005-08-23 Massachusetts Institute Of Technology Method of fabrication for III-V semiconductor surface passivation
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP4249184B2 (ja) 2003-08-12 2009-04-02 日本電信電話株式会社 窒化物半導体成長用基板
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
JP2005235961A (ja) 2004-02-18 2005-09-02 Univ Waseda Ｇａ２Ｏ３系単結晶の導電率制御方法
JP4933513B2 (ja) * 2008-10-14 2012-05-16 日本電信電話株式会社 窒化物半導体成長用基板

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US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
JPS607720A (ja) * 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4802180A (en) * 1986-04-30 1989-01-31 American Telephone And Telegraph Company, At&T Bell Laboratories Growth of congruently melting gadolinium scandium gallium garnet
US4745082A (en) * 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4843450A (en) 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US4970060A (en) * 1988-03-04 1990-11-13 Litton Systems, Inc. Pure or mixed monocrystalline boules of lanthanum orthogallate
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5055445A (en) * 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5550089A (en) 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
JPH0885873A (ja) * 1994-09-16 1996-04-02 Dowa Mining Co Ltd 有機金属錯体を用いる薄膜の製造方法
US5767388A (en) * 1995-04-26 1998-06-16 Siemens Aktiengesellschaft Methane sensor and method for operating a sensor
US5597768A (en) 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5920105A (en) 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
EP0856600B1 (en) * 1997-01-30 2001-04-25 Nippon Telegraph And Telephone Corporation LiGa02 single crystal, single-crystal substrate, and method of manufacturing the same
US6030453A (en) * 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
JP3734586B2 (ja) 1997-03-05 2006-01-11 富士通株式会社 半導体装置及びその製造方法
US6207976B1 (en) 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US5945718A (en) 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) * 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6150677A (en) 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
US6006582A (en) * 1998-03-17 1999-12-28 Advanced Technology Materials, Inc. Hydrogen sensor utilizing rare earth metal thin film detection element
JP3850580B2 (ja) 1999-03-30 2006-11-29 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US6451711B1 (en) 2002-09-17
EP1315852A1 (en) 2003-06-04
WO2002012598A1 (en) 2002-02-14
JP2004519837A (ja) 2004-07-02
AU2001278137A1 (en) 2002-02-18
EP1315852A4 (en) 2005-02-02

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