JP2004318941A5 - - Google Patents
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- JP2004318941A5 JP2004318941A5 JP2003108604A JP2003108604A JP2004318941A5 JP 2004318941 A5 JP2004318941 A5 JP 2004318941A5 JP 2003108604 A JP2003108604 A JP 2003108604A JP 2003108604 A JP2003108604 A JP 2003108604A JP 2004318941 A5 JP2004318941 A5 JP 2004318941A5
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- JP
- Japan
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003108604A JP4331966B2 (ja) | 2003-04-14 | 2003-04-14 | 半導体集積回路 |
| US10/810,672 US7190615B2 (en) | 2003-04-14 | 2004-03-29 | Semiconductor device |
| TW093109996A TW200504757A (en) | 2003-04-14 | 2004-04-09 | Semiconductor integrated circuit |
| KR1020040024833A KR20040090425A (ko) | 2003-04-14 | 2004-04-12 | 반도체 집적회로 |
| US11/713,039 US7342826B2 (en) | 2003-04-14 | 2007-03-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003108604A JP4331966B2 (ja) | 2003-04-14 | 2003-04-14 | 半導体集積回路 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009116104A Division JP2009176419A (ja) | 2009-05-13 | 2009-05-13 | データ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004318941A JP2004318941A (ja) | 2004-11-11 |
| JP2004318941A5 true JP2004318941A5 (https=) | 2006-04-13 |
| JP4331966B2 JP4331966B2 (ja) | 2009-09-16 |
Family
ID=33128070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003108604A Expired - Lifetime JP4331966B2 (ja) | 2003-04-14 | 2003-04-14 | 半導体集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7190615B2 (https=) |
| JP (1) | JP4331966B2 (https=) |
| KR (1) | KR20040090425A (https=) |
| TW (1) | TW200504757A (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW546840B (en) | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
| KR100587702B1 (ko) * | 2004-07-09 | 2006-06-08 | 삼성전자주식회사 | 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법 |
| WO2006018862A1 (ja) * | 2004-08-16 | 2006-02-23 | Fujitsu Limited | 不揮発性半導体メモリ |
| JP2007133927A (ja) * | 2005-11-08 | 2007-05-31 | Toshiba Corp | 半導体記憶装置及びその制御方法 |
| KR100735612B1 (ko) | 2005-12-22 | 2007-07-04 | 삼성전자주식회사 | 멀티패쓰 억세스블 반도체 메모리 장치 |
| JP2007200512A (ja) | 2006-01-30 | 2007-08-09 | Renesas Technology Corp | 半導体記憶装置 |
| US8010867B2 (en) * | 2006-10-12 | 2011-08-30 | Renesas Electronics Corporation | Error correction code decoding device |
| KR100914265B1 (ko) * | 2007-05-10 | 2009-08-27 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및그것의 읽기 방법 |
| US7643367B2 (en) * | 2007-08-15 | 2010-01-05 | Oki Semiconductor Co., Ltd. | Semiconductor memory device |
| US7800951B2 (en) | 2007-08-20 | 2010-09-21 | Marvell World Trade Ltd. | Threshold voltage digitizer for array of programmable threshold transistors |
| JP2009123298A (ja) | 2007-11-16 | 2009-06-04 | Renesas Technology Corp | 半導体集積回路装置 |
| JP2009146499A (ja) * | 2007-12-13 | 2009-07-02 | Toshiba Corp | 不揮発性メモリカード |
| JP4907563B2 (ja) * | 2008-01-16 | 2012-03-28 | パナソニック株式会社 | 半導体記憶装置 |
| KR101452957B1 (ko) | 2008-02-21 | 2014-10-21 | 삼성전자주식회사 | 리드 와일 라이트 동작시 커플링 노이즈를 방지할 수 있는상 변화 메모리 장치 |
| JP5777845B2 (ja) * | 2008-06-26 | 2015-09-09 | スパンション エルエルシー | 不揮発性記憶装置及び不揮発性記憶装置からのデータ読み出し方法 |
| US8228714B2 (en) * | 2008-09-09 | 2012-07-24 | Qualcomm Incorporated | Memory device for resistance-based memory applications |
| US8259461B2 (en) | 2008-11-25 | 2012-09-04 | Micron Technology, Inc. | Apparatus for bypassing faulty connections |
| US8645617B2 (en) * | 2008-12-09 | 2014-02-04 | Rambus Inc. | Memory device for concurrent and pipelined memory operations |
| JP5197406B2 (ja) * | 2009-01-27 | 2013-05-15 | 株式会社東芝 | 半導体記憶装置 |
| US7936625B2 (en) * | 2009-03-24 | 2011-05-03 | Seagate Technology Llc | Pipeline sensing using voltage storage elements to read non-volatile memory cells |
| US8098507B2 (en) * | 2009-07-13 | 2012-01-17 | Seagate Technology Llc | Hierarchical cross-point array of non-volatile memory |
| US8363450B2 (en) | 2009-07-13 | 2013-01-29 | Seagate Technology Llc | Hierarchical cross-point array of non-volatile memory |
| JP5528869B2 (ja) * | 2010-03-23 | 2014-06-25 | スパンション エルエルシー | 不揮発性半導体記憶装置及びその読み出し方法 |
| JP5343916B2 (ja) | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| JP5972700B2 (ja) * | 2012-07-31 | 2016-08-17 | ルネサスエレクトロニクス株式会社 | メモリ装置 |
| KR20150033374A (ko) | 2013-09-24 | 2015-04-01 | 에스케이하이닉스 주식회사 | 반도체 시스템 및 반도체 장치 |
| US9431111B2 (en) * | 2014-07-08 | 2016-08-30 | Ememory Technology Inc. | One time programming memory cell, array structure and operating method thereof |
| JP6422273B2 (ja) * | 2014-09-03 | 2018-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9653174B2 (en) | 2015-03-10 | 2017-05-16 | Kabushiki Kaisha Toshiba | Semiconductor storage device |
| KR102671075B1 (ko) * | 2017-01-13 | 2024-05-30 | 에스케이하이닉스 주식회사 | 반도체장치 |
| JP6846321B2 (ja) | 2017-09-21 | 2021-03-24 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置、及び半導体記憶装置の制御方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3579205B2 (ja) * | 1996-08-06 | 2004-10-20 | 株式会社ルネサステクノロジ | 半導体記憶装置、半導体装置、データ処理装置及びコンピュータシステム |
| JP3602939B2 (ja) * | 1996-11-19 | 2004-12-15 | 松下電器産業株式会社 | 半導体記憶装置 |
| JP3990485B2 (ja) * | 1997-12-26 | 2007-10-10 | 株式会社ルネサステクノロジ | 半導体不揮発性記憶装置 |
| JP2000048586A (ja) * | 1998-07-30 | 2000-02-18 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
| JP2000339983A (ja) | 1999-05-31 | 2000-12-08 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| US6275407B1 (en) * | 1999-06-29 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor memory device having sense and data lines for use to read and write operations |
| JP2001084776A (ja) * | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体記憶装置 |
| JP5034133B2 (ja) * | 2000-02-29 | 2012-09-26 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| US6704828B1 (en) * | 2000-08-31 | 2004-03-09 | Micron Technology, Inc. | System and method for implementing data pre-fetch having reduced data lines and/or higher data rates |
| JP2002133873A (ja) * | 2000-10-23 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US6760243B2 (en) * | 2002-03-19 | 2004-07-06 | Broadcom Corporation | Distributed, highly configurable modular predecoding |
| JP2004213829A (ja) * | 2003-01-08 | 2004-07-29 | Renesas Technology Corp | 半導体記憶装置 |
| US7158429B1 (en) * | 2003-03-26 | 2007-01-02 | Cypress Semiconductor Corp. | System for read path acceleration |
| JP2005004835A (ja) * | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体記憶装置 |
-
2003
- 2003-04-14 JP JP2003108604A patent/JP4331966B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-29 US US10/810,672 patent/US7190615B2/en not_active Expired - Lifetime
- 2004-04-09 TW TW093109996A patent/TW200504757A/zh not_active IP Right Cessation
- 2004-04-12 KR KR1020040024833A patent/KR20040090425A/ko not_active Withdrawn
-
2007
- 2007-03-02 US US11/713,039 patent/US7342826B2/en not_active Expired - Lifetime