JP2004317718A - パターン作成方法、パターン作成システム、および半導体装置の製造方法 - Google Patents

パターン作成方法、パターン作成システム、および半導体装置の製造方法 Download PDF

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Publication number
JP2004317718A
JP2004317718A JP2003110254A JP2003110254A JP2004317718A JP 2004317718 A JP2004317718 A JP 2004317718A JP 2003110254 A JP2003110254 A JP 2003110254A JP 2003110254 A JP2003110254 A JP 2003110254A JP 2004317718 A JP2004317718 A JP 2004317718A
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JP
Japan
Prior art keywords
pattern
exposure mask
target
exposure
wiring
Prior art date
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Pending
Application number
JP2003110254A
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English (en)
Japanese (ja)
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JP2004317718A5 (enExample
Inventor
Ayako Nakano
亜矢子 中野
Toshiya Kotani
敏也 小谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003110254A priority Critical patent/JP2004317718A/ja
Priority to US10/823,539 priority patent/US7402363B2/en
Publication of JP2004317718A publication Critical patent/JP2004317718A/ja
Publication of JP2004317718A5 publication Critical patent/JP2004317718A5/ja
Priority to US12/216,220 priority patent/US8042067B2/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2003110254A 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法 Pending JP2004317718A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003110254A JP2004317718A (ja) 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法
US10/823,539 US7402363B2 (en) 2003-04-15 2004-04-14 Pattern forming method and system, and method of manufacturing a semiconductor device
US12/216,220 US8042067B2 (en) 2003-04-15 2008-07-01 Pattern forming method and system, and method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003110254A JP2004317718A (ja) 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004317718A true JP2004317718A (ja) 2004-11-11
JP2004317718A5 JP2004317718A5 (enExample) 2005-07-28

Family

ID=33471165

Family Applications (1)

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JP2003110254A Pending JP2004317718A (ja) 2003-04-15 2003-04-15 パターン作成方法、パターン作成システム、および半導体装置の製造方法

Country Status (2)

Country Link
US (2) US7402363B2 (enExample)
JP (1) JP2004317718A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007034207A (ja) * 2005-07-29 2007-02-08 Canon Inc マスク作成方法及びマスクパターン設計装置
US7539962B2 (en) 2004-09-08 2009-05-26 Kabushiki Kaisha Toshiba Pattern data correcting method, photo mask manufacturing method, semiconductor device manufacturing method, program and semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667385B2 (en) * 2002-01-28 2003-12-23 Energenetics International, Inc. Method of producing aminium lactate salt as a feedstock for dilactic acid or dimer production
US7503028B2 (en) * 2006-01-10 2009-03-10 International Business Machines Corporation Multilayer OPC for design aware manufacturing
KR100807229B1 (ko) * 2006-07-31 2008-02-28 삼성전자주식회사 마스크의 설계 패턴 보정 방법
JP2010532511A (ja) * 2007-07-06 2010-10-07 サガンテック イスラエル リミテッド 固定及び自由レイアウトエンティティを含む回路レイアウトを修正するためのレイアウト修正エンジン
KR20090032293A (ko) * 2007-09-27 2009-04-01 삼성전자주식회사 모델 베이스 광 근접 효과 보정을 이용한 마스크 제조방법및 이를 이용한 반도체 소자의 제조방법
KR101940843B1 (ko) * 2011-07-20 2019-01-21 칼 짜이스 에스엠에스 엘티디 포토리소그래픽 마스크의 임계 치수 변동을 결정하기 위한 방법 및 장치
CN110221514B (zh) * 2018-03-02 2022-12-16 中芯国际集成电路制造(上海)有限公司 光学邻近校正方法及掩膜版的制作方法
US20220390828A1 (en) * 2021-06-07 2022-12-08 United Microelectronics Corp. Method of making mask pattern and method of forming pattern in layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3934719B2 (ja) 1995-12-22 2007-06-20 株式会社東芝 光近接効果補正方法
JPH1055059A (ja) 1996-08-09 1998-02-24 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
US6316163B1 (en) * 1997-10-01 2001-11-13 Kabushiki Kaisha Toshiba Pattern forming method
JP3278057B2 (ja) 1998-12-14 2002-04-30 日本電気株式会社 半導体製造プロセスの光近接効果補正方法およびマスクデータ形成方法
JP4115615B2 (ja) 1999-03-11 2008-07-09 株式会社東芝 マスクパターン設計方法
JP4352498B2 (ja) 1999-03-26 2009-10-28 ソニー株式会社 パターン露光方法とこれに用いる処理装置
JP2001083689A (ja) 1999-09-14 2001-03-30 Toshiba Corp 半導体製造用マスクのパターン補正方法およびそのパターン補正方法を記録した記録媒体
JP3805936B2 (ja) * 1999-12-28 2006-08-09 株式会社東芝 マスクパターン補正方法及びマスクパターン作成システム
JP4064617B2 (ja) 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
JP2003133417A (ja) * 2001-10-26 2003-05-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその設計方法
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7539962B2 (en) 2004-09-08 2009-05-26 Kabushiki Kaisha Toshiba Pattern data correcting method, photo mask manufacturing method, semiconductor device manufacturing method, program and semiconductor device
JP2007034207A (ja) * 2005-07-29 2007-02-08 Canon Inc マスク作成方法及びマスクパターン設計装置

Also Published As

Publication number Publication date
US8042067B2 (en) 2011-10-18
US20080276216A1 (en) 2008-11-06
US20040259005A1 (en) 2004-12-23
US7402363B2 (en) 2008-07-22

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